 IGZO-TFT was developed by Hideo Hosono's group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 (crystalline IGZO-TFT) and in 2004 (amorphous IGZO-TFT).IGZO-TFT has 20–50 times the electron mobility of amorphous silicon, which has often been used in liquid-crystal displays (LCDs) and e-papers.As a result, IGZO-TFT can improve the speed, resolution and size of flat-panel displays.