 IGZO's advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxide semiconductors.The transistors are slightly photo-sensitive, but the effect becomes significant only in the deep violet to ultra-violet (photon energy above 3 eV) range, offering the possibility of a fully transparent transistor.The current impediment to large-scale IGZO manufacturing is the synthesis method.