 It works as a two-stage process in which defect regions are firstly introduced into the wafer by scanning the beam along intended cutting lines and secondly an underlying carrier membrane is expanded to induce fracture.The first step operates with a pulsed , the wavelength of which (1064 nm) is well adapted to the electronic band gap of silicon (1.11 eV or 1117 nm), so that maximum absorption may well be adjusted by optical focusing.Defect regions of about 10 µm width are inscribed by multiple scans of the laser along the intended dicing lanes, where the beam is focused at different depths of the wafer.