 EBIC is similar to cathodoluminescence in that it depends on the creation of electron–hole pairs in the semiconductor sample by the microscope's electron beam.This technique is used in semiconductor failure analysis and solid-state physics.If the semiconductor sample contains an internal electric field, as will be present in the depletion region at a p-n junction or Schottky junction, the electron–hole pairs will be separated by drift due to the electric field.