 Charge trapping flash is erased via hot hole injection (See Hot-carrier injection) as opposed to the Fowler–Nordheim tunneling approach used in both NAND and NOR flash for erasure.This process uses a field, rather than the current used in FN, to move holes toward the charge trapping layer to remove the charge.Charge trapping flash is similar in manufacture to floating gate flash with certain exceptions that serve to simplify manufacturing.