 The original MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960.Kahng went on to invent the floating-gate MOSFET with Simon Min Sze at Bell Labs, and they proposed its use as a floating-gate (FG) memory cell, in 1967.This was the first form of non-volatile memory based on the injection and storage of charges in a floating-gate MOSFET, which later became the basis for EPROM (erasable PROM), EEPROM (electrically erasable PROM) and flash memory technologies.