 Electrons are moved onto the charge trapping layer similarly to the way that floating gate NOR flash is programmed, through channel hot electron (CHE) injection mechanism also known as Hot-carrier injection.In brief, a high voltage is placed between the control gate while a medium-high voltage is applied on the source and the drain while a current is induced from the source to the drain.Those electrons that have gained sufficient energy in traversing through the high-field region near the drain will boil off from the channel to be injected into the charge trapping layer where they come to rest.