 Furthermore, using these concepts it is possible to create two separate physical bits per cell, doubling the capacity of stored data per cell.In 2000, an Advanced Micro Devices (AMD) research team led by Richard M. Fastow, Egyptian engineer Khaled Z. Ahmed and Jordanian engineer Sameer Haddad (who later joined Spansion) demonstrated a charge trap mechanism for NOR flash memory cells.These innovations were further improved at AMD and Fujitsu in 2002 (and later by Spansion), and first put into volume production by these companies in what was called “MirrorBit Flash memory.”

Charge trapping flash (CTF) was commercialized by AMD and Fujitsu in 2002.