 This nanocrystal approach is being manufactured in volume by Freescale and charge trapping storage in general is in development at ST Microelectronics, Philips, Renesas, Samsung, Toshiba, Atmel, and Spansion.Since the nitride charge trapping layer is nonconductive, it does not need to be patterned – all the charge traps are already insulated from each other.This can be used to simplify manufacturing.