 By allowing the transistor's source and drain to switch from one end of the channel to the other, charges can be injected and stored into the charge trapping layer over either end of the channel.In a similar way, one end of the charge trapping cell can be erased by placing the erasing field at one end or the other of the channel, allowing the other end to float as shown in Figure 3.Band-to-band Hot Hole Erase creates holes that are trapped locally some of which recombine with electrons to remove the charge from that end of the charge trap.