 Since short circuits are less of a concern, a thinner tunnel oxide layer can be used (50-70Å) increasing the trapping layer's coupling to the channel and leading to a faster program speed (with localized trapped charges) and erasing with lower tunneling voltages.The lower tunneling voltages, in turn, place less stress on the tunnel oxide layer, leading to fewer lattice disruptions.Another important benefit of using a charge trapping cell is that the thin charge trapping layer reduces capacitive coupling between neighboring cells to improve performance and scalability.