 In 1962, Atalla and Kahng fabricated a nanolayer-base metal–semiconductor junction (M–S junction) transistor that used gold (Au) thin films with a thickness of 10 nm.In 1987, Iranian engineer Bijan Davari led an IBM research team that demonstrated the first MOSFET with a 10 nm gate oxide thickness, using tungsten-gate technology.Multi-gate MOSFETs enabled scaling below 20 nm gate length, starting with the FinFET (fin field-effect transistor), a three-dimensional, non-planar, double-gate MOSFET.