 The team successfully fabricated FinFET devices down to a 17nm process in 1998, and then 15nm in 2001.In 2002, a team including Yu, Chang, Ahmed, Hu, Liu, Bokor and Tabery fabricated a 10nm FinFET device.In 2006, a team of Korean researchers from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center developed a 3 nm MOSFET, the world's smallest nanoelectronic device.