 An enhanced Poole-Frenkel model, comprehensive of a more accurate description of the trap statistics with the Fermi-Dirac formula, and capable to quantitatively represent the saturation, has been devised by Ongaro and Pillonnet.In charge trap flash memories, charge is stored in a trapping material, typically a silicon-nitride layer, as current flows through a dielectric.In the programming process, electrons are emitted from the substrate towards the trapping layer due to a large positive bias applied to the gate.