 Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in conventional six-transistor SRAM memory.It was expected that the next generation of T-RAM memory will have the same density as DRAM.This technology exploits the electrical property known as negative differential resistor and is characterized by the innovative way in which its memory cells are built, combining DRAM efficiency in terms of space with that of SRAM in terms of speed.