 Kahng went on to invent the floating-gate MOSFET with Simon Min Sze at Bell Labs, and they proposed its use as a floating-gate (FG) memory cell, in 1967.This was the first form of non-volatile memory based on the injection and storage of charges in a floating-gate MOSFET, which later became the basis for EPROM (erasable PROM), EEPROM (electrically erasable PROM) and flash memory technologies.In late 1967, a Sperry research team led by H.A.