 Over long usage this can eventually lead to enough trapped electrons to permanently set the cell to the "0" state, similar to the problems in flash.However, in SONOS this requires on the order of a 100 thousands write/erase cycles,
10 to 100 times worse compared with legacy FG memory cell.The original MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960.