 The linewidth is directly related to the overall storage of the resulting device, and indirectly related to the cost; in theory, SONOS' better scalability will result in higher capacity devices at lower costs.Additionally, the voltage needed to bias the gate during writing is much smaller than in traditional flash.In order to write flash, a high voltage is first built up in a separate circuit known as a charge pump, which increases the input voltage to between 9 V to 20 V. This process takes some time, meaning that writing to a flash cell is much slower than reading, often between 100 and 1000 times slower.