 The focus of DGMOS research and development (R&D) subsequently shifted away from planar DGMOS technology, towards non-planar FinFET (fin field-effect transistor) and GAAFET (gate-all-around field-effect transistor) technologies.FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench.This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last flow.