 This is important as loss of minority carriers from the base to the emitter degrades analog performance.The main difference of the HEBT from the Heterojunction bipolar transistor (HBT) is that the emitter–base interface is the same as in a bipolar junction transistor (BJT) with the blocking energy gap being moved back into the emitter bulk region.The main advantage of HEBT architecture, compared to the HBT is a simplified fabrication process for the emitter–base junction.