 Consequently, there are more sources of variations and possible yield loss in multiple patterning.Where more than one exposure is involved, e.g., LELE or cut exposures for SAQP, the alignment between the exposures must be sufficiently tight.Current overlay capabilities are ≈0.6 nm for exposures of equal density (e.g., LELE) and ≈2.0 nm for dense lines vs. cuts/vias (e.g., SADP or SAQP) on dedicated or matched tools.