 Although EUV has been projected to be the next-generation lithography of choice, it could still require more than one lithographic exposure, due to the foreseen need to first print a series of lines and then cut them; a single EUV exposure pattern has difficulty with line end-to-end spacing control.In addition, the line end placement is significantly impacted by photon shot noise.The existing 0.33 NA EUV tools are challenged below 16 nm half-pitch resolution.