 Grid location selection has an advantage over direct point cutting because the latter is sensitive to overlay and stochastic edge placement errors, which may distort the line ends.The evolution of multiple patterning is being considered in parallel with the emergence of EUV lithography.While EUV lithography satisfies 10-20 nm resolution by basic optical considerations, the occurrence of stochastic defects as well as other infrastructure gaps and throughput considerations prevent its adoption currently.