 This leads in turn to a tradeoff between reducing cell width and reducing cell height.The tradeoff is avoided by adding a cut/trim mask (see discussion below).Hence, for the EUV-targeted 7nm node, with an 18 nm metal linewidth (k1=0.44 for λ=13.5 nm, NA=0.33), the line tip gap of less than 25 nm (k1=0.61) entails EUV single patterning is not sufficient; a second cut exposure is necessary.