 Current EUV throughput is still more than 3x slower than 193 nm immersion lithography, thus allowing the latter to be extended by multiple patterning.Furthermore, the lack of an EUV pellicle is also prohibitive.As of 2016, Intel was using SADP for its 10 nm node; however, as of 2017, the 36 nm minimum metal pitch is now being achieved by SAQP.