 However to differentiate technically from IC technologies IPD technologies may utilise thicker metal (for higher Q value of inductors) or different resistive (like SiCr) layers, thinner or different higher K (higher dielectric constant) dielectric layers (like PZT instead of silicon dioxide or silicon nitride) for higher capacitance density than with typical IC technologies.IPDs on silicon can be grinded - if needed - below 100µm in thickness and with many packaging options (micro-bumping, wire bonding, copper pads) and delivery mode options (as wafers, tape & reel).3D passive integration in silicon is one of the technologies used to manufacture Integrated Passive Devices (IPD), enabling high-density trench capacitors, MIM capacitors, resistors, high-Q inductors, PIN diodes or Zener diodes to be implemented in silicon.