 This low carrier concentration is similar to an intrinsic (perfectly undoped) crystal, but much easier to achieve in practice.These crystals are called "semi-insulating", reflecting their high resistivity of 107–109 Ω·cm (which is quite high for a semiconductor, but still much lower than a true insulator like glass).Wet etching of GaAs industrially uses an oxidizing agent such as hydrogen peroxide or bromine water, and the same strategy has been described in a patent relating to processing scrap components containing GaAs where the is complexed with a hydroxamic acid ("HA"), for example