 The individual flash memory cells, consisting of floating-gate MOSFETs (floating-gate metal–oxide–semiconductor field-effect transistors), exhibit internal characteristics similar to those of the corresponding gates.Flash memory is a type of floating-gate memory that was invented at Toshiba in 1980, based on EEPROM (electrically erasable programmable read-only memory) technology.Toshiba commercially introduced flash memory to the market in 1987.