 The original MOSFET (metal–oxide–semiconductor field-effect transistor), also known as the MOS transistor, was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in 1959.Kahng went on to develop a variation, the floating-gate MOSFET, with Simon Min Sze at Bell Labs in 1967.They proposed that it could be used as floating-gate memory cells for storing a form of programmable read-only memory (PROM) that is both non-volatile and re-programmable.