 The International Technology Roadmap for Semiconductors suggests that CNTs could replace Cu interconnects in integrated circuits, owing to their low scattering, high current-carrying capacity, and resistance to electromigration.For this, vias comprising tightly packed (>1013 cm−2) metallic CNTs with low defect density and low contact resistance are needed.Recently, complementarymetaloxide semiconductor (CMOS)-compatible 150-nm-diameter interconnects with a single CNT–contact hole resistance of 2.8 kOhm were demonstrated on full 200-mm-diameter wafers.