 SWNTs are compatible with field-effect transistor (FET) architectures and high-k dielectrics.Despite progress following the CNT transistor's appearance in 1998, including a tunneling FET with a subthreshold swing of <60 mV per decade (2004), a radio (2007) and an FET with sub-10-nm channel length and a normalized current density of 2.41 mA μm−1 at 0.5 V, greater than those obtained for silicon devices.However, control of diameter, chirality, density and placement remains insufficient for commercial production.