b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20130214270 [Published] 08-22-2013 [Description] 
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ
Kengo Akimoto, Atsugi JP - Patent applications