fdcee4fa_saki__JP___Patent_applications__Description
[Patent application number] 20090311876 [Published] 12-17-2009 [Description] 
Manufacturing method of semiconductor device and substrate processing apparatus - A manufacturing method of a semiconductor device, including the steps of: loading into a processing chamber a substrate having a high dielectric gate insulating film and a metal electrode, with a side wall exposed by etching; applying oxidation processing to the substrate by supplying thereto hydrogen-containing gas and oxygen-containing gas excited by plasma, with the substrate heated to a temperature not allowing the high dielectric gate insulating film to be crystallized, in the processing chamber; and unloading the substrate after processing from the processing chamber.
Terasaki, JP - Patent applications