b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20100213461 [Published] 08-26-2010 [Description] 
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for forming a thin film transistor includes steps of forming a first wiring layer over a first electrode layer and forming a second wiring layer over a second electrode layer, wherein the first electrode layer extends beyond an end portion of the first wiring layer, the second electrode layer extends beyond an end portion of the second wiring layer, and a semiconductor layer is formed so as to be electrically connected to a side face and a top face of the first electrode layer and a side face and a top face of the second electrode layer.
Kengo Akimoto, Atsugi JP - Patent applications