b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20110272699 [Published] 11-10-2011 [Description] 
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A gate electrode is formed by forming a first conductive layer containing aluminum as its main component over a substrate, forming a second conductive layer made from a material different from that used for forming the first conductive layer over the first conductive layer; and patterning the first conductive layer and the second conductive layer. Further, the first conductive layer includes one or more selected from carbon, chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel. And the second conductive layer includes one or more selected from chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel, or nitride of these materials.
Kengo Akimoto, Atsugi JP - Patent applications