b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20130299827 [Published] 11-14-2013 [Description] 
OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
Kengo Akimoto, Atsugi JP - Patent applications