b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20100051949 [Published] 03-04-2010 [Description] 
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semiconductor film may lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.
Kengo Akimoto, Atsugi JP - Patent applications