b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20100279474 [Published] 11-04-2010 [Description] 
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A formation of a gate electrode provided over an oxide semiconductor layer of a thin film transistor is performed together with a patterning of the oxide semiconductor layer.
Kengo Akimoto, Atsugi JP - Patent applications