fdcee4fa_saki__JP___Patent_applications__Description
[Patent application number] 20100123183 [Published] 05-20-2010 [Description] 
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.
Terasaki, JP - Patent applications