b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20110024751 [Published] 02-03-2011 [Description] 
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.
Kengo Akimoto, Atsugi JP - Patent applications