b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20090233417 [Published] 09-17-2009 [Description] 
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The manufacturing method includes attaching a single crystal semiconductor layer to a supporting substrate, detecting a position of a deficiency region in the single crystal semiconductor layer, forming a non-single-crystal semiconductor layer over the single crystal semiconductor layer, selectively improving crystallinity of a portion of the non-single-crystal semiconductor layer based on the position of the deficiency region, the portion being overlapped with the deficiency region, and planarizing the non-single-crystal semiconductor layer over the supporting substrate.
Kengo Akimoto, Atsugi JP - Patent applications