b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20100065838 [Published] 03-18-2010 [Description] 
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.
Kengo Akimoto, Atsugi JP - Patent applications