b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20120261657 [Published] 10-18-2012 [Description] 
OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In
Kengo Akimoto, Atsugi JP - Patent applications