fdcee4fa_saki__JP___Patent_applications__Description
[Patent application number] 20090253272 [Published] 10-08-2009 [Description] 
Method for manufacturing semiconductor device and substrate processing apparatus - A gate insulating film with less leakage current is formed, while a surface temperature of a silicon substrate is decreased. Gas containing oxygen atoms and nitrogen atoms is supplied into a processing chamber, then the gas containing the oxygen atoms and the nitrogen atoms is activated by plasma, and the silicon substrate is subjected to processing by plasma, and a silicon dioxide film containing nitrogen is formed.
Terasaki, JP - Patent applications