b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20100136743 [Published] 06-03-2010 [Description] 
Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Kengo Akimoto, Atsugi JP - Patent applications