b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20100314624 [Published] 12-16-2010 [Description] 
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - The invention relates to a nonvolatile semiconductor memory device including a semiconductor layer which has a source region, a drain region, and a channel forming region which is provided between the source region and the drain region; and a first insulating layer, a first gate electrode, a second insulating layer, and a second gate electrode which are layered over the semiconductor layer in that order. Part or all of the source and drain regions is formed using a metal silicide layer. The first gate electrode contains a noble gas element.
Kengo Akimoto, Atsugi JP - Patent applications