b626bc89_tsugi_JP___Patent_applications__Description
[Patent application number] 20120241735 [Published] 09-27-2012 [Description] 
OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.
Kengo Akimoto, Atsugi JP - Patent applications