Applications of Multi-Terminal Memristive Devices: A Review
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paper_title: Resistive Programmable Through-Silicon Vias for Reconfigurable 3-D Fabrics

paper_content:

In this letter, we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) cointegration with 380 μm-height Cu through-silicon via (TSV) arrays for programmable 3-D interconnects. Nonvolatile resistive switching of Pt/TiO2 /Pt thin films is first characterized with a resistance ratio up to five orders of magnitude. Then, cointegration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 and 60 μm diameter Cu TSVs is fabricated. Repeatable nonvolatile bipolar switching of the ReRAM cells is demonstrated for different structures.
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paper_title: Memristors: A New Nanoscale CNN Cell

paper_content:

The circuit-theoretic foundation of the memristor and its generalizations to a lossless memory capacitor and a lossless memory inductor is presented along with the devices’ constitutive relations. Their identifying fingerprints consist of a pinched hysteresis loop when plotted in the voltage versus current plane, voltage versus charge plane, and current versus flux plane, respectively. All three devices are nonlinear and their underlying physical mechanisms are expected to dominate and manifest their memory character as the device size scales below 20 nm, when electrons and ions are coupled strongly under intense electric and/or magnetic fields. While all three devices are ideal candidates for nonvolatile nano memories, their long-term significance lies in their enabling potentials for designing nano CNNs, and intelligent machines, with learning and adaptive capabilities. Even more fundamental is their nonlinear dynamics that underpins the biological basis of life itself, where ion channels, with their complex biochemical synaptic dynamics, are essentially memristors.
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paper_title: GMS: Generic memristive structure for non-volatile FPGAs

paper_content:

The invention of the memristor enables new possibilities for computation and non-volatile memory storage. In this paper we propose a Generic Memristive Structure (GMS) for 3-D FPGA applications. The GMS cell is demonstrated to be utilized for steering logic useful for multiplexing signals, thus replacing the traditional pass-gates in FPGAs. Moreover, the same GMS cell can be utilized for programmable memories as a replacement for the SRAMs employed in the look-up tables of FPGAs. A fabricated GMS cell is presented and its use in FPGA architecture is demonstrated by the area and delay improvement for several architectural benchmarks.
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paper_title: Spintronic Memristor Temperature Sensor

paper_content:

Thermal fluctuation effects on the electric behavior of a spintronic memristor based upon the spin-torque-induced domain-wall motion are explored. Depending upon material, geometry, and electric excitation strength, the device electric behavior can be either sensitive or insensitive to temperature change. We present temperature sensor designs that operate at a temperature sensitive region. The sensitivity is achieved through a combination of the temperature-dependent domain-wall mobility and the positive feedback between memristor resistance and driving strength.
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paper_title: Ambipolar Si nanowire field effect transistors for low current and temperature sensing

paper_content:

This paper reports on the fabrication and characterization of a pA current and temperature sensing device with ultra-low power consumption based on a Schottky barrier silicon nanowire transistor. Thermionic and trap-assisted tunneling current conduction mechanisms are identified and discussed on the base of the device sensitivity upon current and temperature biasing. In particular, very low current sensing properties are confirmed also with previously reported polysilicon-channel nanowire Schottky barrier transistors. demonstrating that these devices are suitable for temperature and current sensing applications. Moreover, the process flow compatibility for both sensing and logic applications makes these devices suitable for heterogeneous integration.
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paper_title: Memristive devices and systems

paper_content:

A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics. While possessing memory and exhibiting small-signal inductive or capacitive effects, they are incapable of energy discharge and they introduce no phase shift between the input and output waveforms. This zero-crossing property gives rise to a Lissajous figure which always passes through the origin. Memristive systems are hysteretic in the sense that their Lissajous figures vary with the excitation frequency. At very low frequencies, memristive systems are indistinguishable from nonlinear resistors while at extremely high frequencies, they reduce to linear resistors. These anomalous properties have misled and prevented the identification of many memristive devices and systems-including the thermistor, the Hodgkin-Huxley membrane circuit model, and the discharge tubes. Generic properties of memristive systems are derived and a canonic dynamical system model is presented along with an explicit algorithm for identifying the model parameters and functions.
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paper_title: Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires

paper_content:

Bistable nanoscale switches have been assembled using nanowires and redox active molecules as building blocks. The nanodevices consist of nanowire field-effect transistors (NW-FET) functionalized with redox active molecules, where the redox species can store charges and thereby maintain the NW-FETs in either a logic on or off state with high or low channel conductance, respectively. Single NW and crossed NW-FET devices have been assembled and shown to switch reversibly as two- and three-terminal devices. Individual NW devices with on/off ratios exceeding 104 and retention times in excess of 20 min, and integrated arrays in which devices are independently addressable, have been assembled. The characteristics of the molecule-gated NW-FET devices suggest that they could serve as key elements in a range of nanoelectronics applications, including nonvolatile memory and programmable logic array.
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paper_title: A new logic family based on hybrid MOSFET-polysilicon nanowires

paper_content:

A new logic family based on ultra-thin film (10nm) nanograins (5 to 20nm) polysilicon wires (polySiNW) is proposed, validated and studied. This logic family can be operated from 4K up to 400K and hybridized with conventional CMOS. Ultra low power dissipation in the order of hundreds of pWs has been observed, which is outperforming CMOS technology, in terms of power consumption, by orders of magnitude
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paper_title: Experimental demonstration of associative memory with memristive neural networks

paper_content:

When someone mentions the name of a known person we immediately recall her face and possibly many other traits. This is because we possess the so-called associative memory, that is the ability to correlate different memories to the same fact or event. Associative memory is such a fundamental and encompassing human ability (and not just human) that the network of neurons in our brain must perform it quite easily. The question is then whether electronic neural networks (electronic schemes that act somewhat similarly to human brains) can be built to perform this type of function. Although the field of neural networks has developed for many years, a key element, namely the synapses between adjacent neurons, has been lacking a satisfactory electronic representation. The reason for this is that a passive circuit element able to reproduce the synapse behaviour needs to remember its past dynamical history, store a continuous set of states, and be "plastic" according to the pre-synaptic and post-synaptic neuronal activity. Here we show that all this can be accomplished by a memory-resistor (memristor for short). In particular, by using simple and inexpensive off-the-shelf components we have built a memristor emulator which realizes all required synaptic properties. Most importantly, we have demonstrated experimentally the formation of associative memory in a simple neural network consisting of three electronic neurons connected by two memristor-emulator synapses. This experimental demonstration opens up new possibilities in the understanding of neural processes using memory devices, an important step forward to reproduce complex learning, adaptive and spontaneous behaviour with electronic neural networks.
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paper_title: A hybrid nanomemristor/transistor logic circuit capable of self-programming

paper_content:

Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metal-oxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing.
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paper_title: Ultra-thin nanograin polysilicon devices for hybrid CMOS-NANO integrated circuits

paper_content:

The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is a field effect transistor, where the transistor channel is a nanograin polysilicon wire, and its operation (programmation) is controlled by a silicon buried gate bias. The nanograin material is expected to offer interesting properties for single electron memory applications. The second main objective of the research is to realize and qualify a CMOS-polySiNW hybrid circuit, which offers novel functionalities and/or outperforming characteristics compared with state-of-the-art CMOS. Original approach consisting in hybridization, allows to bring out new functionalities (using polySiNW original characteristics), as well as much higher current level (provided by CMOS high current drive) than traditional nanoelectronic devices. Fabrication of the polySiNW device involves extensive technological developments for the deposition and the implantation of the ultra-thin 10nm nanograin polysilicon film. With the two-step deposition process consisting of an aSi deposition followed by a crystallization, a 6nm polysilicon film with grain sizes ranging from 5 to 20nm is realized. An original implantation process at 500°C is validated. Electrical characterization of the polySiNW devices shows ambipolar conduction (due to the Schottky nature of the source/drain contacts), and hysteresis effects linked to effective and reproducible electrical field assisted charge trapping in the polySiNW, at room temperature. Based on those two effects, a novel constant current bias scheme is proposed and applied to: low current measurement with less than 1pA resolution, new ultra-low power (few pWs) logic family, and memory. Finally, the nMOS-polySiNW technological hybridization opens the new field of the interfacing of polySiNW devices with other CMOS circuits or systems, but also the design of a hybrid negative differential resistance (NDR) circuit cell with some record performances. The fabrication of a hybrid NDR shows a peak-to-valley current ratio of more than seven decades, with a negative subthreshold slope of less than -10mV/decade, at room temperature.
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paper_title: Three terminal solid-electrolyte nanometer switch

paper_content:

We propose a three-terminal solid-electrolyte nanometer switch, where the control gate is separated from the current path. This novel switch resolves the issues arising from large current during switching (>1mA) in a two-terminal solid-electrolyte switch. We demonstrate that the drain current reversibly switches when a metallic bridge electrochemically forms or dissolves between the source and drain by applying gate voltage. The ON resistance is 200-300Omega and the ON/OFF current ratio is as high as 105. Each state is nonvolatile
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paper_title: CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices

paper_content:

This paper describes a digital logic architecture for ‘CMOL’ hybrid circuits which combine a semiconductor–transistor (CMOS) stack and two levels of parallel nanowires, with molecular-scale nanodevices formed between the nanowires at every crosspoint. This cell-based, field-programmable gate array (FPGA)-like architecture is based on a uniform, reconfigurable CMOL fabric, with four-transistor CMOS cells and two-terminal nanodevices (‘latching switches’). The switches play two roles: they provide diode-like I –V curves for logic circuit operation, and allow circuit mapping on CMOL fabric and its reconfiguration around defective nanodevices. Monte Carlo simulations of two simple circuits (a 32-bit integer adder and a 64-bit full crossbar switch) have shown that the reconfiguration allows one to increase the circuit yield above 99% at the fraction of bad nanodevices above 20%. Estimates have shown that at the same time the circuits may have extremely high density (approximately 500 times higher than that of the usual CMOS FPGAs with the same design rules), while operating at higher speed at acceptable power consumption. (Some figures in this article are in colour only in the electronic version)
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paper_title: Resistive Programmable Through-Silicon Vias for Reconfigurable 3-D Fabrics

paper_content:

In this letter, we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) cointegration with 380 μm-height Cu through-silicon via (TSV) arrays for programmable 3-D interconnects. Nonvolatile resistive switching of Pt/TiO2 /Pt thin films is first characterized with a resistance ratio up to five orders of magnitude. Then, cointegration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 and 60 μm diameter Cu TSVs is fabricated. Repeatable nonvolatile bipolar switching of the ReRAM cells is demonstrated for different structures.
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paper_title: Nonvolatile 3D-FPGA with monolithically stacked RRAM-based configuration memory

paper_content:

SRAM based configuration memory is the primary contributor to the large area, delay, and power consumption of FPGAs relative to ASICs. In [1] it is estimated that a 3D-FPGA with the configuration memory stacked on top of the FPGA logic and routing can achieve 57% smaller die area than a baseline 2D-FPGA in 65nm CMOS technology. Motivated by these potential performance gains, several programmable logic devices with different monolithically stacked configuration memory technologies have been reported [2–4]. These memory technologies, however, require materials and/or processes that may not be compatible or scalable with CMOS processes. This paper presents the first 3D-FPGA with stacked configuration memory based on the emerging nonvolatile Resistive RAM (RRAM) technology described in [5], which is both compatible and scalable with CMOS.
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paper_title: Memory Devices: Energy–Space–Time Tradeoffs

paper_content:

Many memory candidates based on beyond complementary metal-oxide-semiconductor (CMOS) nanoelectronics have been proposed, but no clear successor has yet been identified. In this paper, we offer a methodology for system-level analysis and address the relationship of the maximum performance of a given memory device type to device physics. The method is illustrated for the classical dynamic RAM (DRAM) device and for the emerging memory device known as the resistive RAM (ReRAM).
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paper_title: Flash-based Field Programmable Gate Array Technology with Deep Trench Isolation

paper_content:

A highly scalable flash-based Field Programmable Gate Array (FPGA) technology has been achieved with Deep Trench Isolation (DTI). The DTI allows for a reduced cell size and enables Independent Pwell (IPW) operation. The IPW allows the Fowler-Nordheim (FN) Uniform Channel Program and Erase (UCPE) with less than plusmn10 V. Additionally, the IPW approach allows a greater flexibility in the array bias scheme reducing the gate disturb during programming and eliminating all Gate-Induced Drain Leakage (GIDL) conditions. Characterization of a FPGA cell and 0.5 Mbit array with 90 nm design rules is demonstrated with excellent electrical characteristics.
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paper_title: Architecture and CAD for Deep-Submicron FPGAs

paper_content:

From the Publisher: ::: Architecture and CAD for Deep-Submicron FPGAs addresses several key issues in the design of high-performance FPGA architectures and CAD tools, with particular emphasis on issues that are important for FPGAs implemented in deep-submicron processes. Three factors combine to determine the performance of an FPGA: the quality of the CAD tools used to map circuits into the FPGA, the quality of the FPGA architecture, and the electrical (i.e. transistor-level) design of the FPGA. Architecture and CAD for Deep-Submicron FPGAs examines all three of these issues in concert.
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paper_title: Performance benefits of monolithically stacked 3D-FPGA

paper_content:

The performance benefits of a monolithically stacked 3D-FPGA, whereby the programming overhead of an FPGA is stacked on top of a standard CMOS layer containing the logic blocks and interconnects, are investigated. A Virtex-II style 2D-FPGA fabric is used as a baseline for quantifying the relative improvements in logic density, delay, and power consumption achieved by such a 3D-FPGA. It is assumed that only the pass-transistor switches and configuration memory cells can be moved to the top layers and that the 3D-FPGA employs the same logic block and programmable interconnect architecture as the baseline 2D-FPGA. Assuming a configuration memory cell that is ≤ 0.7 the area of an SRAM cell and pass-transistor switches having the same characteristics as nMOS devices in the CMOS layer are used, it is shown that a monolithically stacked 3D-FPGA can achieve 3.2 times higher logic density, 1.7 times lower critical path delay, and 1.7 times lower total dynamic power consumption than the baseline 2D-FPGA fabricated in the same 65nm technology node.
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paper_title: Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

paper_content:

Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 109 cycles, sufficient retention exceeding 10 years at 85degC. TaOx exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 mum CMOS process.
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paper_title: Challenges and opportunities for HfOX based resistive random access memory

paper_content:

The binary oxide based resistive memories showing superior electrical performances on the resistive switching are reviewed in this paper. The status and challenges of the HfO X based resistive device with excellent memory properties are presented. Several future challenges for the filamentary type switching device are also addressed.
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paper_title: Complementary resistive switches for passive nanocrossbar memories

paper_content:

Resistive nanowire arrays are intensively pursued as easy-to-fabricate memory technology, where data can be written and read through simple voltage–current operations. However, problems encountered in achieving stable switching independent of external influences has hampered their progress. The complementary, antiserial arrangement of two memory elements is now shown to lead to the desired stability.
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paper_title: Memristive switching mechanism for metal/oxide/metal nanodevices

paper_content:

Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties in understanding and controlling the coupled electronic and ionic phenomena that dominate the behaviour of nanoscale oxide devices. An analytic theory of the 'memristor' (memory-resistor) was first developed from fundamental symmetry arguments in 1971, and we recently showed that memristor behaviour can naturally explain such coupled electron-ion dynamics. Here we provide experimental evidence to support this general model of memristive electrical switching in oxide systems. We have built micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching. We demonstrate that switching involves changes to the electronic barrier at the Pt/TiO2 interface due to the drift of positively charged oxygen vacancies under an applied electric field. Vacancy drift towards the interface creates conducting channels that shunt, or short-circuit, the electronic barrier to switch ON. The drift of vacancies away from the interface annilihilates such channels, recovering the electronic barrier to switch OFF. Using this model we have built TiO2 crosspoints with engineered oxygen vacancy profiles that predictively control the switching polarity and conductance.
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paper_title: THE SURFACE SCIENCE OF TITANIUM DIOXIDE

paper_content:

Abstract Titanium dioxide is the most investigated single-crystalline system in the surface science of metal oxides, and the literature on rutile (1 1 0), (1 0 0), (0 0 1), and anatase surfaces is reviewed. This paper starts with a summary of the wide variety of technical fields where TiO 2 is of importance. The bulk structure and bulk defects (as far as relevant to the surface properties) are briefly reviewed. Rules to predict stable oxide surfaces are exemplified on rutile (1 1 0). The surface structure of rutile (1 1 0) is discussed in some detail. Theoretically predicted and experimentally determined relaxations of surface geometries are compared, and defects (step edge orientations, point and line defects, impurities, surface manifestations of crystallographic shear planes—CSPs) are discussed, as well as the image contrast in scanning tunneling microscopy (STM). The controversy about the correct model for the (1×2) reconstruction appears to be settled. Different surface preparation methods, such as reoxidation of reduced crystals, can cause a drastic effect on surface geometries and morphology, and recommendations for preparing different TiO 2 (1 1 0) surfaces are given. The structure of the TiO 2 (1 0 0)-(1×1) surface is discussed and the proposed models for the (1×3) reconstruction are critically reviewed. Very recent results on anatase (1 0 0) and (1 0 1) surfaces are included. The electronic structure of stoichiometric TiO 2 surfaces is now well understood. Surface defects can be detected with a variety of surface spectroscopies. The vibrational structure is dominated by strong Fuchs–Kliewer phonons, and high-resolution electron energy loss spectra often need to be deconvoluted in order to render useful information about adsorbed molecules. The growth of metals (Li, Na, K, Cs, Ca, Al, Ti, V, Nb, Cr, Mo, Mn, Fe, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au) as well as some metal oxides on TiO 2 is reviewed. The tendency to ‘wet’ the overlayer, the growth morphology, the epitaxial relationship, and the strength of the interfacial oxidation/reduction reaction all follow clear trends across the periodic table, with the reactivity of the overlayer metal towards oxygen being the most decisive factor. Alkali atoms form ordered superstructures at low coverages. Recent progress in understanding the surface structure of metals in the ‘strong-metal support interaction’ (SMSI) state is summarized. Literature is reviewed on the adsorption and reaction of a wide variety of inorganic molecules (H 2 , O 2 , H 2 O, CO, CO 2 , N 2 , NH 3 , NO x , sulfur- and halogen-containing molecules, rare gases) as well as organic molecules (carboxylic acids, alcohols, aldehydes and ketones, alkynes, pyridine and its derivates, silanes, methyl halides). The application of TiO 2 -based systems in photo-active devices is discussed, and the results on UHV-based photocatalytic studies are summarized. The review ends with a brief conclusion and outlook of TiO 2 -based surface science for the future.
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paper_title: Effect of the top electrode material on the resistive switching of TiO2 thin film

paper_content:

Effect of the top electrode (TE) metal on the resistive switching of (TE)/TiO"2/Pt structure was investigated. It was confirmed that the potential barrier height between the metal and TiO"2 is an important factor on the resistive switching characteristics. When high Schottky barrier was formed with the TiO"2 film, using Pt or Au as a top electrode, both stable URS (unipolar) and BRS (bipolar resistive switching) characteristics were observed depending on the current compliance level. In the case of Ag, which forms a relatively low Schottky barrier, only BRS characteristics were observed, regardless of the current compliance level. In the case of Ni and Al, which have similar work function as Ag, unstable URS and BRS at very low current compliance levels were observed due to a chemical reaction at the interface. For the Ti electrode, resistive switching was not observed, because the work function of Ti is lower than that of TiO"2 and TiO phase was formed at the interface (Ti/TiO"x contact is ohmic).
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paper_title: Interface‐Engineered Amorphous TiO2‐Based Resistive Memory Devices

paper_content:

Crossbar-type bipolar resistive memory devices based on low-temperature amorphous TiO2 (a-TiO2) thin films are very promising devices for flexible nonvolatile memory applications. However, stable bipolar resistive switching from amorphous TiO2 thin films has only been achieved for Al metal electrodes that can have severe problems like electromigration and breakdown in real applications and can be a limiting factor for novel applications like transparent electronics. Here, amorphous TiO2-based resistive random access memory devices are presented that universally work for any configuration of metal electrodes via engineering the top and bottom interface domains. Both by inserting an ultrathin metal layer in the top interface region and by incorporating a thin blocking layer in the bottom interface, more enhanced resistance switching and superior endurance performance can be realized. Using high-resolution transmission electron microscopy, point energy dispersive spectroscopy, and energy-filtering transmission electron microscopy, it is demonstrated that the stable bipolar resistive switching in metal/a-TiO2/metal RRAM devices is attributed to both interface domains: the top interface domain with mobile oxygen ions and the bottom interface domain for its protection against an electrical breakdown.
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paper_title: Ambipolar Si nanowire field effect transistors for low current and temperature sensing

paper_content:

This paper reports on the fabrication and characterization of a pA current and temperature sensing device with ultra-low power consumption based on a Schottky barrier silicon nanowire transistor. Thermionic and trap-assisted tunneling current conduction mechanisms are identified and discussed on the base of the device sensitivity upon current and temperature biasing. In particular, very low current sensing properties are confirmed also with previously reported polysilicon-channel nanowire Schottky barrier transistors. demonstrating that these devices are suitable for temperature and current sensing applications. Moreover, the process flow compatibility for both sensing and logic applications makes these devices suitable for heterogeneous integration.
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paper_title: Fabrication and characterization of vertically stacked Gate-All-Around Si Nanowire FET arrays

paper_content:

We describe the fabrication of vertically stacked Silicon Nanowire Field Effect Transistors (SiNW FETs) in Gate-All Around (GAA) configuration. Stacks with the number of channels ranging from 1 to 12 have been successfully produced by means of a micrometer scale lithography and conventional fabrication techniques. It is shown that demonstrator Schottky Barrier (SB) devices fabricated with Cr/NiCr contacts present good subthreshold slope (70mV/dec), I ON /I OFF ratio ≥ 104 and reproducible ambipolar behavior.
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paper_title: The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts

paper_content:

Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotube devices contacted with Pd electrodes. The SB barrier heights were determined from the activation energy of the temperature-dependent thermionic emission current in the off-state of the devices. The barrier heights generally decrease with increasing diameter of the nanotubes and they are in agreement with the values expected when assuming little or no influence of Fermi level pinning.
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paper_title: Memristive devices fabricated with silicon nanowire schottky barrier transistors

paper_content:

This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowire (poly-SiNW) channel in back-gate configuration. The memristive devices presented here have the potential of a very high integration density, and they are suitable for hybrid CMOS co-fabrication with a CMOS-compatible process. We show that 2 different regimes are possible, making these devices suitable either for volatile ambipolar memory or resistive random access memory (RRAM) applications. In addition, frequency- and amplitude- dependence of the memristive behavior are reported.
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paper_title: Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species

paper_content:

Detection and quantification of biological and chemical species are central to many areas of healthcare and the life sciences, ranging from diagnosing disease to discovery and screening of new drug molecules. Semiconductor nanowires configured as electronic devices have emerged as a general platform for ultra-sensitive direct electrical detection of biological and chemical species. Here we describe a detailed protocol for realizing nanowire electronic sensors. First, the growth of uniform, single crystal silicon nanowires, and subsequent isolation of the nanowires as stable suspensions are outlined. Second, fabrication of addressable nanowire device arrays is described. Third, covalent modification of the nanowire device surfaces with receptors is described. Fourth, an example modification and measurements of the electrical response from devices are detailed. The silicon nanowire (SiNW) devices have demonstrated applications for label-free, ultrasensitive and highly-selective real-time detection of a wide range of biological and chemical species, including proteins, nucleic acids, small molecules and viruses.
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paper_title: Memristive devices and systems

paper_content:

A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics. While possessing memory and exhibiting small-signal inductive or capacitive effects, they are incapable of energy discharge and they introduce no phase shift between the input and output waveforms. This zero-crossing property gives rise to a Lissajous figure which always passes through the origin. Memristive systems are hysteretic in the sense that their Lissajous figures vary with the excitation frequency. At very low frequencies, memristive systems are indistinguishable from nonlinear resistors while at extremely high frequencies, they reduce to linear resistors. These anomalous properties have misled and prevented the identification of many memristive devices and systems-including the thermistor, the Hodgkin-Huxley membrane circuit model, and the discharge tubes. Generic properties of memristive systems are derived and a canonic dynamical system model is presented along with an explicit algorithm for identifying the model parameters and functions.
---
paper_title: Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires

paper_content:

Bistable nanoscale switches have been assembled using nanowires and redox active molecules as building blocks. The nanodevices consist of nanowire field-effect transistors (NW-FET) functionalized with redox active molecules, where the redox species can store charges and thereby maintain the NW-FETs in either a logic on or off state with high or low channel conductance, respectively. Single NW and crossed NW-FET devices have been assembled and shown to switch reversibly as two- and three-terminal devices. Individual NW devices with on/off ratios exceeding 104 and retention times in excess of 20 min, and integrated arrays in which devices are independently addressable, have been assembled. The characteristics of the molecule-gated NW-FET devices suggest that they could serve as key elements in a range of nanoelectronics applications, including nonvolatile memory and programmable logic array.
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paper_title: The missing memristor found

paper_content:

Nature 453, 80–83 (2008) In Fig. 2a of this Letter, the resistance for the right-hand element of the bottom circuit should be R OFF(1 - w/D), instead of the shown value R OFF w/D. Also, the correct value of window function should be w(D - W)/D 2, rather than w(1 - W)/D 2. All simulation results presented in the paper use the correct formulae.
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paper_title: Multiplexed electrical detection of cancer markers with nanowire sensor arrays

paper_content:

We describe highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays. Protein markers were routinely detected at femtomolar concentrations with high selectivity, and simultaneous incorporation of control nanowires enabled discrimination against false positives. Nanowire arrays allowed highly selective and sensitive multiplexed detection of prostate specific antigen (PSA), PSA-a1-antichymotrypsin, carcinoembryonic antigen and mucin-1, including detection to at least 0.9 pg/ml in undiluted serum samples. In addition, nucleic acid receptors enabled real-time assays of the binding, activity and small-molecule inhibition of telomerase using unamplified extracts from as few as ten tumor cells. The capability for multiplexed real-time monitoring of protein markers and telomerase activity with high sensitivity and selectivity in clinically relevant samples opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.
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paper_title: Memristive devices fabricated with silicon nanowire schottky barrier transistors

paper_content:

This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowire (poly-SiNW) channel in back-gate configuration. The memristive devices presented here have the potential of a very high integration density, and they are suitable for hybrid CMOS co-fabrication with a CMOS-compatible process. We show that 2 different regimes are possible, making these devices suitable either for volatile ambipolar memory or resistive random access memory (RRAM) applications. In addition, frequency- and amplitude- dependence of the memristive behavior are reported.
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paper_title: Antibody microarrays: An evaluation of production parameters

paper_content:

Antibody microarrays could have an enormous impact on the functional analysis of cellular activity and regulation, especially at the level of protein expression and protein-protein interaction, and might become an invaluable tool in disease diagnostics. The array surface is bound to have a tremendous influence on the findings from such studies. Apart from the basic issue of how to attach antibodies optimally without affecting their function, it is also important that the cognate antigens, applied within a complex protein mixture, all bind to the arrayed antibodies irrespective of their enormous variety in structure. In this study, various factors in the production of antibody microarrays on glass support were analysed: the modification of the glass surface; kind and length of cross-linkers; composition and pH of the spotting buffer; blocking reagents; antibody concentration and storage procedures, in order to evaluate their effect on array performance. Altogether, data from more than 700 individual array experiments were taken into account. In addition to home-made slides, commercially available systems were also included in the analysis.
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paper_title: Single-Protein Molecular Interactions on Polymer-Modified Glass Substrates for Nanoarray Chip Application Using Dual-Color TIRFM

paper_content:

The immobilization of proteins and their molecular interactions on various polymer-modified glass substrates [i.e. 3-aminopropyltriethoxysilane (APTS), 3-glycidoxypropyltrimethoxysilane (GPTS), poly (ethylene glycol) diacrylate (PEG-DA), chitosan (CHI), glutaraldehyde (GA), 3-(trichlorosilyl)propyl methacrylate (TPM), 3'-mercaptopropyltrimethoxysilane (MPTMS), glycidyl methacrylate (GMA) and poly-l-lysine (PL).] for potential applications in a nanoarray protein chip at the single-molecule level was evaluated using prismtype dual-color total internal reflection fluorescence microscopy (dual-color TIRFM). A dual-color TIRF microscope, which contained two individual laser beams and a single high-sensitivity camera, was used for the rapid and simultaneous dual-color detection of the interactions and colocalization of different proteins labeled with different fluorescent dyes such as Alexa Fluor ® 488, Qdot ® 525 and Alexa Fluor ® 633. Most of the polymer-modified glass substrates showed good stability and a relative high signal-to-noise (S/N) ratio over a 40-day period after making the substrates. The GPTS/CHI/GA-modified glass substrate showed a 13.5-56.3% higher relative S/N ratio than the other substrates. 1% Top-Block in 10 mM phosphate buffered saline (pH 7.4) showed a 99.2% increase in the blocking effect of non-specific adsorption. These results show that dual-color TIRFM is a powerful methodology for detecting proteins at the single-molecule level with potential applications in nanoarray chips or nano-biosensors.
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Title: Applications of Multi-Terminal Memristive Devices: A Review

Section 1: Introduction
Description 1: Provide an overview of the various applications of multi-terminal memristive devices, including their potential use in memory storage, logic functions, and sensing.

Section 2: Fabrication
Description 2: Discuss the fabrication process of multi-terminal memristive devices, including specific materials and methods used to build and enhance the performance of these devices.

Section 3: BEoL Integration of ReRAMs
Description 3: Explain the integration of ReRAMs into the Back-End-of-the-Line (BEoL) processing and its implications for multi-terminal memristive devices.

Section 4: Device Description
Description 4: Describe the structure and function of the generic memory structure (GMS) and how ReRAMs are interconnected to perform complementary programming operations.

Section 5: GMS Memory Node
Description 5: Detail the design and operation of a memory node using GMS, including its application in reducing frontend occupancy in reprogrammable circuits.

Section 6: Resistive Programmable TSVs
Description 6: Examine the technology used for 3D interconnects, focusing on the integration and electrical characterization of resistive switching materials with Through-Silicon Vias (TSVs).

Section 7: Temperature Sensing with Ambipolar Si Nanowire Transistors
Description 7: Discuss the fabrication, characterization, and temperature sensing capabilities of ambipolar silicon nanowire transistors with ultra-low power consumption.

Section 8: Biomolecule Detection Using Memristive Si Nanowires
Description 8: Present the nano-fabrication process and functionalization of memristive silicon nanowires for bio-molecule detection in dry environments.

Section 9: Conclusions
Description 9: Summarize the various applications and potential benefits of multi-terminal memristive devices, including advancements in memory, logic circuits, and sensing applications.