U.S. patents available from 1976 to present. U.S. patent
applications available from 2005 to present.  Process for
fabricating SiC semiconductor devices  Patent 3956032 Issued on
May 11, 1976. Estimated Expiration Date: Icon_subject May 11,
1993. Estimated Expiration Date is calculated based on simple
USPTO term provisions. It does not account for terminal
disclaimers, term adjustments, failure to pay maintenance fees,
or other factors which might affect the term of a patent.
Abstract Claims Description Full Text  Patent References
No. 508784 filed on 09/24/1974  US Classes:  117/101,
Characterized by specified crystallography or arrangement of
substrate (e.g., wafer cassette, Miller index)117/103, Using an
energy beam or field, a particle beam or field, or a plasma
(e.g., ionization, PECVD, CBE, MOMBE, RF induction,
laser)117/89, Including change in a growth-influencing parameter
(e.g., composition, temperature, concentration, flow rate)
during growth (e.g., multilayer or junction or superlattice gro