InAs/InP Quantum Dash devices at 1.55µm  Photonics Theory Group
InAs/InP Quantum Dash 1.55µm  quantum Dash cross section
nanoplusQuantum dot (QD) materials have been long hoped to offer
real and significant device performance improvement on the
previous generation of strained and unstrained quantum Well
materials. These properties are in particular the prospect of a
lower and temperature insensitive threshold current compared
with quantum well lasers. Previously successful 1.3µm wavelength
GaAs-based QD materials are difficult to extend to the longer
1.55µm wavelength. Given a wealth of existing commercial
experience, InAs quantum dots grown on InP substrates offer a
cost effective alternative. Growth on these commercially
favoured (001) oriented InP substrates favours elongated quantum
dot structures called quantum dashes. These InAs/InP quantum
dash lasers have demonstrated many impressive characteristics
such as high modal gain per dash layer and high characteristic
temperature, T0. As part of the EU FP6