Molecular beam epitaxy  From Wikipedia, the free encyclopedia
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Molecular Beam Epitaxy system  Molecular beam epitaxy (MBE) is
one of several methods of depositing single crystals. It was
invented in the late 1960s at Bell Telephone Laboratories by J.
R. Arthur and Alfred Y. Cho.[1] MBE is widely used in the
manufacture of semiconductor devices, including transistors for
cellular phones and WiFi.   Molecular beam epitaxy takes place
in high vacuum or ultra-high vacuum (10−8 Pa). The most
important aspect of MBE is the deposition rate (typically less
than 3000 nm per hour) allows the films to grow epitaxially.
These deposition rates require proportionally better vacuum to
achieve the same impurity levels as other deposition techniques.
The absence of carrier gases as well as the ultra high vacuum
environment result in the highest achievable purity of the grown
films.  In solid-source MBE,