By Topic  Study of 375 nm ultraviolet InGaN/AlGaN light-emitting
diodes with heavily Si-doped GaN transition layer in growth
mode, internal quantum efficiency, and device performance  Sign
In   7 Author(s) Shih-Cheng Huang ; Department of Materials
Science and Engineering, National Chung Hsing University,
Taichung 40227, Taiwan ; Kun-Ching Shen ; Dong-Sing Wuu ; Po-Min
Tu more authors   High performance 375 nm ultraviolet (UV)
InGaN/AlGaN light-emitting diodes (LEDs) were demonstrated with
inserting a heavy Si-doped GaN transition layer by metal-organic
chemical vapor deposition. From transmission electron microcopy
(TEM) image, the dislocation densities were significantly
reduced due to the existence of the heavily Si-doping growth
mode transition layer (GMTL), which results in residual stress
relaxation and 3D growth. The internal quantum efficiency (IQE)
of the LEDs with GMTL was measured by power-dependent
photoluminescence (PL) to be 40.6% higher than ones without
GMTL. The GMTL leads to the superior IQE