Interest in the memristor revived when an experimental solid-state version was reported by R. Stanley Williams of Hewlett Packard in 2007. The article was the first to demonstrate that a solid-state device could have the characteristics of a memristor based on the behavior of nanoscale thin films. The device neither uses magnetic flux as the theoretical memristor suggested, nor stores charge as a capacitor does, but instead achieves a resistance dependent on the history of current.