In 2016, there was a further investigation on this phenomenon. Instead of a high-voltage LED chip, a GaN -based low-voltage LED chip was also examined in this case. This chip can withstand a wider range of applied currents and facilitate more precise power change for observing the thermal inductive responses. The chip was mounted on a lead frame and encapsulated with silicone. The chip package was soldered to a metal core printed circuit board and mounted on a thermal plate with controllable temperatures. The transient junction temperature of the LED chip as a function of time was measured with the applied current as different step down functions. They calculated that the junction temperature is equal to 36.2 °C at 350 mA in this situation. The results are consistent with the previous thermal inductive measurement in the GaN-based high-voltage LED chip. As expected, the junction temperatures immediately rise and gradually decrease as the currents are stepped down. And the recovery time is slower for the system with a larger step level decrease. They prove that a rapid changing power through the GaN-based LEDs induces a proportional temperature change, which is opposed to the temperature change expected from the power input. This phenomenon is referred as thermal inductance in the report. The thermal inductive properties could be related to the thermoelectric effect, especially the transient thermoelectric effect. However, rather than considering the specified structure of thermoelectric devices, it is considered that the thermal inductance that occurs in GaN devices with a p–n junction. With the combination of the thermal resistance, the thermal capacitance, and the thermal inductance, it is expected that their assumption can promote the thermal analysis of high-frequency GaN devices. In addition, it is expected that thermal inductance phenomena exist more widely exist in nonhomogeneous materials and in the field of thermal analysis under energy changes in very short duration.