Two forms of plasma ashing are typically performed on wafers. High temperature ashing, or stripping, is performed to remove as much photo resist as possible, while the "descum" process is used to remove residual photo resist in trenches. The main difference between the two processes is the temperature the wafer is exposed to while in an ashing chamber. Typical issues arise when this photoresist has undergone an implant step previously and heavy metal are embedded in the photoresist and it has experienced high temperatures causing it to be resistant to oxidizing.