The transport characteristics of the TiF memristor in the small current – small voltage range are non-linear. This non-linearity well compares to the non-linear characteristics in the small current – small voltage range of the basic former and present building blocks in the arithmetic logic unit of von-Neumann computers, i.e. of vacuum tubes and of transistors. In contrast to vacuum tubes and transistors, the signal output of hysteretic flux-charge memristors, i.e. of TiF memristors, is not lost when the operation power is switched off before storing the signal output to the memory. Therefore, hysteretic flux-charge memristors are said to merge the functionality of the arithmetic logic unit and of the memory unit without data transfer [DOI: 10.1002/adfm.201303365]. The transport characteristics in the small current – small voltage range of hysteretic current-voltage memristors are linear. This explains why hysteretic current-voltage memristors are well established memory units and why they can not merge the functionality of the arithmetic logic unit and of the memory unit without data transfer [arXiv:2403.20051].