where the first equation represents the time evolution of the memristive element's internal memory either in current or voltage, and the second equation represents the conservation of currents at the nodes. Since every element is Ohmic, then, V = R ( x ) I which is Ohm's law and x is the memory parameters. These parameters typically represent the internal memory of the resistive device and are associated to physical properties of the device changing as an effect of current/voltage. These equations become quickly highly nonlinear because the memristive device is typically nonlinear, and moreover Kirchhoff's laws introduce a higher layer of complexity. A silver nanowire connectome can be described using graph theory, and have applications ranging from sensors to information storage.Since memristive devices behave as axons in a neuronal network, the theory of memristive networks is the theory of nanoscale electric physical devices whose behavior parallels the one of real neuronal circuits.