In metals, the Fermi level lies in the conduction band (see Band Theory, above) giving rise to free conduction electrons. However, in semiconductors the position of the Fermi level is within the band gap, about halfway between the conduction band minimum (the bottom of the first band of unfilled electron energy levels) and the valence band maximum (the top of the band below the conduction band, of filled electron energy levels). That applies for intrinsic (undoped) semiconductors. This means that at absolute zero temperature, there would be no free conduction electrons, and the resistance is infinite. However, the resistance decreases as the charge carrier density (i.e., without introducing further complications, the density of electrons) in the conduction band increases. In extrinsic (doped) semiconductors, dopant atoms increase the majority charge carrier concentration by donating electrons to the conduction band or producing holes in the valence band. (A "hole" is a position where an electron is missing; such holes can behave in a similar way to electrons.) For both types of donor or acceptor atoms, increasing dopant density reduces resistance. Hence, highly doped semiconductors behave metallically. At very high temperatures, the contribution of thermally generated carriers dominates over the contribution from dopant atoms, and the resistance decreases exponentially with temperature.