Manufacturing a GaSb PV cell is quite simple. Czochralski tellurium -doped n-type GaSb wafers are commercially available. Vapor-based zinc diffusion is carried out at elevated temperatures (~450 °C) to allow for p-type doping. Front and back electrical contacts are patterned using traditional photolithography techniques and an anti-reflective coating is deposited. Efficiencies are estimated at ~20% using a 1000 °C black body spectrum. The radiative limit for efficiency of the GaSb cell in this setup is 52%.