(MBE). MBE has so far been the most common experimental technique. The growth of thin film topological insulators is governed by weak van der Waals interactions. The weak interaction allows to exfoliate the thin film from bulk crystal with a clean and perfect surface. The van der Waals interactions in epitaxy also known as van der Waals epitaxy (VDWE), is a phenomenon governed by weak van der Waal's interactions between layered materials of different or same elements in which the materials are stacked on top of each other. This approach allows the growth of layered topological insulators on other substrates for heterostructure and integrated circuits.