According to the original 1971 definition, the memristor is the fourth fundamental circuit element, forming a non-linear relationship between electric charge and magnetic flux linkage. In 2011, Chua argued for a broader definition that includes all two-terminal non-volatile memory devices based on resistance switching. Williams argued that MRAM, phase-change memory and ReRAM are memristor technologies. Some researchers argued that biological structures such as blood and skin fit the definition. Others argued that the memory device under development by HP Labs and other forms of ReRAM are not memristors, but rather part of a broader class of variable-resistance systems, and that a broader definition of memristor is a scientifically unjustifiable land grab that favored HP's memristor patents.