Indium gallium arsenide (InGaAs) is a compound III-V semiconductor. It can be applied in two ways for use in TPVs. When lattice-matched to an InP substrate, InGaAs has a bandgap of 0.74 eV, no better than GaSb. Devices of this configuration have been produced with a fill factor of 69% and an efficiency of 15%. However, to absorb higher wavelength photons, the bandgap may be engineered by changing the ratio of In to Ga. The range of bandgaps for this system is from about 0.4 to 1.4 eV. However, these different structures cause strain with the InP substrate. This can be controlled with graded layers of InGaAs with different compositions. This was done to develop of device with a quantum efficiency of 68% and a fill factor of 68%, grown by MBE. This device had a bandgap of 0.55 eV, achieved in the compound In 0.68 Ga 0.33 As. It is a well-developed material. InGaAs can be made to lattice match perfectly with Ge resulting in low defect densities. Ge as a substrate is a significant advantage over more expensive or harder-to-produce substrates.