In the beginning of the slowing-down process at high energies, the ion is slowed mainly by electronic stopping, and it moves almost in a straight path. When the ion has slowed sufficiently, the collisions with nuclei (the nuclear stopping) become more and more probable, finally dominating the slowing down. When atoms of the solid receive significant recoil energies when struck by the ion, they will be removed from their lattice positions, and produce a cascade of further collisions in the material. These collision cascades are the main cause of damage production during ion implantation in metals and semiconductors.