Superlattices can be produced using various techniques, but the most common are molecular-beam epitaxy (MBE) and sputtering. With these methods, layers can be produced with thicknesses of only a few atomic spacings. An example of specifying a superlattice is [ Fe 20 V 30 ] 20. It describes a bi-layer of 20Å of Iron (Fe) and 30Å of Vanadium (V) repeated 20 times, thus yielding a total thickness of 1000Å or 100 nm. The MBE technology as a means of fabricating semiconductor superlattices is of primary importance. In addition to the MBE technology, metal-organic chemical vapor deposition (MO-CVD) has contributed to the development of superconductor superlattices, which are composed of quaternary III-V compound semiconductors like InGaAsP alloys. Newer techniques include a combination of gas source handling with ultrahigh vacuum (UHV) technologies such as metal-organic molecules as source materials and gas-source MBE using hybrid gases such as arsine (AsH 3) and phosphine (PH 3) have been developed.