2D transition metal dichalcogenides are often used in applications such as flexible and stretchable electronics, where an understanding of their mechanical properties and the operational impact of mechanical changes to the materials is paramount for device performance. Under strain TMDs change their electronic bandgap structure of both the direct gap monolayer and the indirect gap few layer cases indicating applied strain as a tunable parameter. Monolayer MoS 2 has a Youngs modulus of 270 GPA and with a maximum strain of 10% before yield. In comparison, bilayer MoS2 has a Youngs modulus of 200 GPa attributed to interlayer slip. As layer number is increased further the interlayer slip is overshadowed by the bending rigidity with a Youngs modulus of 330 GPa.