From the band diagrams, one can deduce the I d − − V g characteristics of the Schottky CNT FETs. Starting at the OFF state, there is hole current, which gradually decreases as the gate voltage is increased until it is opposed with equal strength by the electron current coming from the source. Above the critical gate voltage in the ON state, the electron current prevails and reaches a maximum at V g = V d and the I − − V curve will roughly have a V-shape.