Saturation velocity is a very important parameter in the design of semiconductor devices, especially field effect transistors, which are basic building blocks of almost all modern integrated circuits. Typical values of saturation velocity may vary greatly for different materials, for example for Si it is in the order of 1×10 cm/s, for GaAs 1.2×10 cm/s, while for 6H-SiC, it is near 2×10 cm/s. Typical electric field strengths at which carrier velocity saturates is usually on the order of 10-100 kV/cm. Both saturation field and the saturation velocity of a semiconductor material are typically strong function of impurities, crystal defects and temperature.