Germanium has largely been replaced by silicon in semiconducting devices, being cheaper, more resilient at higher operating temperatures, and easier to work during the microelectronic fabrication process. Germanium is still a constituent of semiconducting silicon-germanium "alloys" and these have been growing in use, particularly for wireless communication devices; such alloys exploit the higher carrier mobility of germanium. The synthesis of gram-scale quantities of semiconducting germanane was reported in 2013. This consists of one-atom thick sheets of hydrogen-terminated germanium atoms, analogous to graphane. It conducts electrons more than ten times faster than silicon and five times faster than germanium, and is thought to have potential for optoelectronic and sensing applications. The development of a germanium-wire based anode that more than doubles the capacity of lithium-ion batteries was reported in 2014. In the same year, Lee et al. reported that defect-free crystals of graphene large enough to have electronic uses could be grown on, and removed from, a germanium substrate.