A proxy for charge carrier mobility can be evaluated using time-resolved microwave conductivity (TRMC). A pulsed optical laser is used to create electrons and holes in a semiconductor, which are then detected as an increase in photoconductance. With knowledge of the sample absorbance, dimensions, and incident laser fluence, the parameter ϕ ϕ Σ Σ μ μ = ϕ ϕ ( μ μ e + μ μ h ) can be evaluated, where ϕ ϕ is the carrier generation yield (between 0 and 1), μ μ e is the electron mobility and μ μ h is the hole mobility. ϕ ϕ Σ Σ μ μ has the same dimensions as mobility, but carrier type (electron or hole) is obscured.