Time-integrated Formingfree (TiF) memristors reveal a hysteretic flux-charge curve with two distinguishable branches in the positive bias range and with two distinguishable branches in the negative bias range. And TiF memristors also reveal a hysteretic current-voltage curve with two distinguishable branches in the positive bias range and with two distinguishable branches in the negative bias range. The memristance state of a TiF memristor can be controlled by both the flux and the charge [DOI: 10.1063/1.4775718]. A TiF memristor was first demonstrated by Heidemarie Schmidt and her team in 2011 [DOI: 10.1063/1.3601113]. This TiF memristor is composed of a BiFeO 3 thin film between metallically conducting electrodes, one gold, the other platinum. The hysteretic flux-charge curve of the TiF memristor changes its slope continuously in one branch in the positive and in one branch in the negative bias range (write branches) and has a constant slope in one branch in the positive and in one branch in the negative bias range (read branches) [arXiv:2403.20051]. According to Leon O. Chua [Reference 1: 10.1.1.189.3614 ] the slope of the flux-charge curve corresponds to the memristance of a memristor or to its internal state variables. The TiF memristors can be considered as memristors with a constant memristance in the two read branches and with a reconfigurable memristance in the two write branches. The physical memristor model which describes the hysteretic current-voltage curves of the TiF memristor implements static and dynamic internal state variables in the two read branches and in the two write branches [arXiv:2402.10358].