The resonant tunnelling diode makes use of quantum tunnelling in a very different manner to achieve a similar result. This diode has a resonant voltage for which a current favors a particular voltage, achieved by placing two thin layers with a high energy conductance band near each other. This creates a quantum potential well that has a discrete lowest energy level. When this energy level is higher than that of the electrons, no tunnelling occurs and the diode is in reverse bias. Once the two voltage energies align, the electrons flow like an open wire. As the voltage further increases, tunnelling becomes improbable and the diode acts like a normal diode again before a second energy level becomes noticeable.