However, by the mid 2000s, new manufacturing processes were requiring new process control capabilities, for example the need for control of new "diffusion-less" annealing processes and advanced strained silicon processes. To address these new process control requirements, in 2007, Xitronix Corporation introduced a photo-reflectance system to the semiconductor process control market. Like the Therma-Probe, the Xitronix metrology system utilized a fixed wavelength probe beam generated by a laser. However, the probe beam of the Xitronix system had a wavelength of approximately 375 nanometers, near the first major interband transition in silicon. At this wavelength the electro-modulation signal is dominant, which enabled the Xitronix system to precisely measure active doping concentration in diffusion-less annealing processes. This probe beam wavelength also provided excellent sensitivity to strain in strained silicon processes. More recently, the use of laser photo-reflectance technology for precision measurement of carrier diffusion lengths, recombination lifetimes, and mobilities has been demonstrated.