The InPAsSb quaternary alloy has been grown by both OMVPE and LPE. When lattice-matched to InAs, it has a bandgap in the range 0.3–0.55 eV. The benefits of such a low band gap have not been studied in depth. Therefore, cells incorporating InPAsSb have not been optimized and do not yet have competitive performance. The longest spectral response from an InPAsSb cell studied was 4.3 μm with a maximum response at 3 μm. For this and other low-bandgap materials, high IQE for long wavelengths is hard to achieve due to an increase in Auger recombination.