EEPROM and flash memory media have individually erasable segments, each of which can be put through a finite number of erase cycles before possibly starting to wear-out and becoming statistically unreliable: anywhere between 10,000 and 1,000,000 cycles, for example, for NAND flash devices.
This can be anywhere between 10,000 and 1,000,000 cycles, for example, for NAND flash devices. EEPROM and flash memory media have individually erasable segments, each of which can be put through a finite number of erase cycles before becoming unreliable.
EEPROM and flash memory media have individually erasable segments, each of which can be put through a finite number of erase cycles before becoming unreliable. This can be anywhere between 10,000 and 1,000,000 cycles, for example, for NAND flash devices.
EEPROM and flash memory media have individually erasable segments, each of which can be put through a finite number of erase cycles before becoming unreliable. This can be anywhere between 10,000 and 1,000,000 cycles, for example, for NAND flash devices.