The silicon control rectifier (SCR) consists of four layers of semiconductors, which form NPNP or PNPN structures have three P-N junctions labeled J1, J2 and J3, and three terminals.
It has three junctions, labeled J1, J2 and J3, and three terminals. The silicon control rectifier (SCR) consists of four layers of semiconductors, which form NPNP or PNPN structures have three P-N junctions.
The silicon control rectifier (SCR) consists of four layers of semiconductors, which form NPNP or PNPN structures have three P-N junctions. It has three junctions, labeled J1, J2 and J3, and three terminals.
The silicon control rectifier (SCR) consists of four layers of semiconductors, which form NPNP or PNPN structures have three P-N junctions. It has three junctions, labeled J1, J2 and J3, and three terminals.