During rapid crystal growth from the melt, dopant concentrations can far exceed the thermodynamic solubility limit through a solute trapping phenomenon, which is relevant for achieving sufficiently high free carrier concentrations since these dopants tend to be deep donors with high ionization energies.
This is necessary to achieve sufficiently high free carrier concentrations, since these dopants tend to be deep donors with high ionization energies. During rapid crystal growth from the melting, dopant concentrations can far exceed the thermodynamic solubility limit through a solute trapping phenomenon.
During rapid crystal growth from the melting, dopant concentrations can far exceed the thermodynamic solubility limit through a solute trapping phenomenon. This is necessary to achieve sufficiently high free carrier concentrations, since these dopants tend to be deep donors with high ionization energies.
During rapid crystal growth from the melting, dopant concentrations can far exceed the thermodynamic solubility limit through a solute trapping phenomenon. This is necessary to achieve sufficiently high free carrier concentrations, since these dopants tend to be deep donors with high ionization energies.