When using this technique, one sometimes has to correct for the distance between the depletion edge and where the Fermi level intersects the energy level of interest, which is known as the lambda effect. 3 Weighting functions for this technique include the high-resolution GS4 and the boxcar, which is a pairof positive and negative unit rectangular pulses; such weighting functions multiply this technique'smeasurements and the result is integrated over time to obtain a spectrum. The activation energy for 6 the things investigated in this technique can be determined by plotting emission rate over temperature squared v. 100 over temperature on an Arrhenius plot. The delay times t1 and t2 for this technique determine the rate window and the temperature of the maximum peak shifts. This technique applies 9 a reverse bias pulse to a Schottky diode or p-n junction and measures the (*) transient capacitance due to the thermal emission of majority carriers from trap levels as the junction bias re
When using this technique, one sometimes has to correct for the distance between the depletion edge and where the Fermi level intersects the energy level of interest, which is known as the lambda effect. 3 Weighting functions for this technique include the high-resolution GS4 and the boxcar, which is a pairof positive and negative unit rectangular pulses; such weighting functions multiply this technique'smeasurements and the result is integrated over time to obtain a spectrum. The activation energy for 6 the things investigated in this technique can be determined by plotting emission rate over temperature squared v. 100 over temperature on an Arrhenius plot. The delay times t1 and t2 for this technique determine the rate window and the temperature of the maximum peak shifts. This technique applies 9 a reverse bias pulse to a Schottky diode or p-n junction and measures the (*) transient capacitance due to the thermal emission of majority carriers from trap levels as the junction bias returns to steady-state. For10 points, name this highly sensitive technique for characterizing defects in semiconductors.
When using this technique, one sometimes has to correct for the distance between the depletion edge and where the Fermi level intersects the energy level of interest, which is known as the lambda effect.
DLTS [or: deep-level transient spectroscopy]