Interacting only with electrons exiting the metallic layer, it is formed through the depletion of charge carriers when a semiconductor is brought into contact with a metal.
Its height can be expressed as the difference between the work function and the electron affinity and, unlike band-bending, this potential is unaffected by an applied bias voltage and is independent of bulk doping. Interacting only with electrons exiting the metallic layer, it is formed through the depletion of charge carriers when a semiconductor is brought into contact with a metal. Named for a German physicist, for ten points, name this rectifying barrier used to form the surface junction variation of a point- contact diode.
Its height can be expressed as the difference between the work function and the electron affinity and, unlike band-bending, this potential is unaffected by an applied bias voltage and is independent of bulk doping.
Schottky barrier