An aluminum-doped version of15 this semiconductor has attracted widespread interest as a potential replacement for ITO, which uses a lot of the very-expensive-and-scarce indium.
Using a disordered polycrystalline form of this material, Cao et al. were the first to demonstrate the existence of coherent random lasing, which is due to photon localization that's analogous to Anderson 3 localization for electrons. In terms of unique 1D nanostructures, and its properties, this materialis the #1 most diverse, being capable of forming nanocombs, nanorings, nanohelixes, nanobows,nanobelts, nanowires, and nanocages, among others. A broad peak of unknown origin around 500 6 to 530 nanometers appears in the luminescence spectra of this semiconductor and is known as its "green band". It's possible to engineer the bandgap of this semiconductor using sufficiently small concentrations of magnesium and cadmium. This semiconductor has a very large excition binding9 energy, at 60 meV, making it a candidate for exciton-based lasers operated above room temperature. Due to the presence of interstitial hydrogen, which acts as a shallow donor and is ubiquitous, and the fact that only nitrogen is a shallow acceptor in this semiconductor, it's extremely difficult to dope12 this semiconductor p-type with any sort of quality. It's very easy to grow bulk single crystals of this wurtzite semiconductor with bandgap 3.3 eV, so it may eventually supersede (*) GaN for many optoelectronic applications, a material for which it's also a great substrate. An aluminum-doped version of15 this semiconductor has attracted widespread interest as a potential replacement for ITO, which uses a lot of the very-expensive-and-scarce indium. For 10 points, name this piezoelectric transparent conductive oxide.
Using a disordered polycrystalline form of this material, Cao et al. were the first to demonstrate the existence of coherent random lasing, which is due to photon localization that's analogous to Anderson 3 localization for electrons.
ZnO [or: zinc oxide] 