The transconductance of these devices is proportional to the ratio of the current at the Q-point with the thermal voltage, and the thickness of one part of these devices is typically made shorter than the diffusion length of the electron to prevent recombination.
At high current density, the transit time in one part of these devices dramatically increases in the Kirk effect. One variety of this device was developed by Jean Hoerni and has a planar configuration with a silicon passivation layer. The transconductance of these devices is proportional to the ratio of the current at the Q-point with the thermal voltage, and the thickness of one part of these devices is typically made shorter than the diffusion length of the electron to prevent recombination. These devices can operate in saturation, cutoff, inverted, or active modes by varying the biasing between its components. These devices, which use two different types of charge carriers and come in (*) PNP and NPN configurations, have an emitter, base and a collector, which each have one lead. These devices, which are most often used as amplifiers, have two interfaces between two different types of semiconductors. For 10 points, name these electronic devices which essentially are composed of two opposing diodes and are often contrasted with field-effect transistors.
At high current density, the transit time in one part of these devices dramatically increases in the Kirk effect.
bipolar junction transistor [or BJT; prompt on partial answer; do NOT accept “field-effect transistor”, “FET”, or “MOSFET”]