Another variant of this process that relieves some of the stress is prefixed poly-buffered.
A variant on this process that eliminates most of its disadvantages is the SWAMI. Another variant of this process that relieves some of the stress is prefixed poly-buffered. Even after removing the 3 materials used in this process, it often leaves behind a white ribbon, due to nitridation of the silicon surface, which is sometimes called the Kooi effect. Even if one uses a buffer oxide under a silicon nitride layer in this process, a prominent bird's beak develops at the edges. This process has been 6 completely supplanted by (*) STI, shallow trench isolation. For 10 points, identify this isolation methodthat used to be synonymous with MOS devices and is named for its use of an oxide.
A variant on this process that eliminates most of its disadvantages is the SWAMI.
LOCOS [or: local oxidation of silicon] 