DLCP is a variation of this technique that has the advantage of not being sensitive to interface states and traps.
Kroemer and Chien extended the viability of this technique to heterojunctions by showing that the Debye averaging, or smearing, process preserves the moment of the electron distribution and the 3 charge increment. DLCP is a variation of this technique that has the advantage of not being sensitive to interface states and traps. If one is using this method, it's very important to know that its spatial resolution is limited by the Debye length. It is commonly performed in a nondestructive manner with 6 a mercury probe or in a destructive manner with an electrochemical cell whose results are computed by the Mott-Schottky relationship. Instead of plotting the y-axis as linear for it, the y-axis is commonly plotted as an inverse square in order to determine the uniformity of (*) carrier density. As a namesake 9 parameter of this technique is equal to the permittivity times area over junction depth, it's used to determine the doping profile. For 10 points, name this technique used primarily for pn junctions and MOSFETs, in whichone namesake parameter is measured as the other namesake parameter, aka the bias, is varied.
Kroemer and Chien extended the viability of this technique to heterojunctions by showing that the Debye averaging, or smearing, process preserves the moment of the electron distribution and the 3 charge increment.
C-V profiling [or: capacitance-voltage profiling; in place of "profiling": pretty much anything, including "method", "measurement", "test"] 