Pershin and Di Ventra proposed that this device can work based entirely on the electron-spin degree of freedom. Tungsten oxide was used in this device in a 1990 article describing its possible use in electronic neuron networks. The graph of its IV ch
Pershin and Di Ventra proposed that this device can work based entirely on the electron-spin degree of freedom. Tungsten oxide was used in this device in a 1990 article describing its possible use in electronic neuron networks. The graph of its IV characteristics was described to look like "pinched hysteresis loops" by the scientist who defined it as a two-terminal element in which the magnetic flux is a function of the amount of electric charge passing through it. In the current version of this device two layers of titanium oxide are used, one of which contains TiO2-x instead of TiO2. For 10 points, identify this device postulated by Leon Chua which is able to change and maintain its namesake value based on the current and voltage across it, the fourth fundamental circuit element.
Pershin and Di Ventra proposed that this device can work based entirely on the electron-spin degree of freedom.
memristors