The Fermi potential relates this parameter to the doping level of the semiconductor. In modern device processes, it is typically adjusted to the desired value by performing a channel stop implant. Empirically, it can be determined by extrapolating the slope of an I-V curve from the linear region to the x-axis. In p-channel devices, it is typically positive, while in n-channel devices it is typically negative. This characteristic describes the point when a strong enough vertical electric field exists to create an inversion channel on top of a depletion region in a MOSFET. For 10 points, name this potential, the point at which diodes or transistors turn on and allows current to flow, which is 
The Fermi potential relates this parameter to the doping level of the semiconductor. In modern device processes, it is typically adjusted to the desired value by performing a channel stop implant. Empirically, it can be determined by extrapolating the slope of an I-V curve from the linear region to the x-axis. In p-channel devices, it is typically positive, while in n-channel devices it is typically negative. This characteristic describes the point when a strong enough vertical electric field exists to create an inversion channel on top of a depletion region in a MOSFET. For 10 points, name this potential, the point at which diodes or transistors turn on and allows current to flow, which is often referred to as V sub t.
The Fermi potential relates this parameter to the doping level of the semiconductor.
{threshold voltage} [accept {turn} on {voltage} before mentioned; do not accept “{saturation voltage}”]