These devices can suffer from parasitic capacitance when the gate overlaps the drain and source.
The reliability of these devices is affected by TDDB, HCI and NBTI. Buried layers are used in these devices to prevent latchup. A measure usually abbreviated g-sub-m, the transconductance, is important in characterizing these devices. The accumulation of minority carriers near the surface of the substrate creates an inverted layer in these devices; that inverted layer is pinched off in the saturation region and, depending on that layer's composition, results in these devices being classified as n- or p-channel. These devices can be categorized into depletion or enhancement mode depending on their threshold voltage. These devices can suffer from parasitic capacitance when the gate overlaps the drain and source. For 10 points, identify this most popular type of transistor that supplanted the BJT.
The reliability of these devices is affected by TDDB, HCI and NBTI.
MOSFET [or metal-oxide-semiconductor field-effect transistor; or MOS transistor; or other types of field-effect transistors, such as insulated-gate (IG), modulation-doped (MOD), junction gate (J), metal-semiconductor (MES), tunnel (T) and numerous less common ones]