Requiring its left gate edge to overlap the source for the device to operate, FTP, name this type of transistor, the most commonly type used in VLSI circuits, and normally referred to by its 6-letter acronym.
Though it was developed in 1960, Lilienfeld and Heil patented a similarly structured device in 1930.  Its voltage gain is caused by the fact that the current saturates at higher drain-source voltages, so that small drain current variation can cause large drain volt variation.  It comes in four different varieties depending on its conduction layer.  A four terminal device, its source and drain are rectifying PN junctions and its gates are insulated with silicon dioxide.  Requiring its left gate edge to overlap the source for the device to operate, FTP, name this type of transistor, the most commonly type used in VLSI circuits, and normally referred to by its 6-letter acronym.
Though it was developed in 1960, Lilienfeld and Heil patented a similarly structured device in 1930.  
Metal Oxide Semiconductor Field Effect Transistor