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6.5.8 Equivalent circuit for the MOSFET

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1 6.5.8 Equivalent circuit for the MOSFET

2 Parasitic elements in the MOSFET equivalent circuit
Capacitance The gate capacitance Ci is the sum of the distributed capacitance from the gate to the source end of the channel (CGS) and the drain end (CGD). The overlap capacitance from the gate-to-source (COS) and gate-to-drain (COD). COD is also known as Miller overlap capacitance. The p-n junction depletion capacitances associated with the source (CJS) and drain (CJD). Resistance The source/drain series resistances (RS and RD). The resistances in the substrate between the bulk contact and the source and drain (RBS and RBD). Current source The drain current can be modeled as a (gate) voltage-controlled constant current source.

3 Miller overlap capacitance
The Miller overlap capacitance (GOD) is particularly problematic because it represents a feedback path between the output drain terminal and the input gate terminal. One can measure the Miller capacitance at high frequency by holding the gate at ground (VG=0) so that an inversion layer is not formed in the channel. Thereby, most of the measured capacitance between gate and drain is due to the Miller capacitance, rather than the gate capacitance Ci. Minimization of Miller capacitance by self-aligned gate. Gate itself is used to mask the source/drain implants, thereby achieving alignment. There is always certain amount of overlap. Lateral straggle or spread of the implanted dopants underneath the gate. Further spread by lateral diffusion during high temperature annealing.

4 Reduced channel dimension of L and Z
The spread of the source/drain junctions under the gate edge determines what is called the channel length reduction, LR. The electrical or “effective” channel length, Leff, in terms of the physical gate length, L as Leff = L - LR. Z The width reduction results from the physical isolation regions that are formed around all transistors, generated by LOCOS.

5 Source/drain series resistance
Source/drain series resistance RSD = (RS + RD). It degrades the drain current and transconductance. For a certain applied drain bias to the source/drain terminals, part of the applied voltage is “wasted” as an ohmic voltage drop across these resistance, depending on the drain current (or gate bias). The actual drain voltage applied to the intrinsic MOSFET itself is less. Causes ID to increase sub-linearly with VG.

6 Determination of RSD and LR
In the linear region We can measure VD/ID in the linear range for various MOSFETs having the same width, but different channel lengths, as a function of substrate bias. Varying the substrate bias changes the VT through the body effect, and therefore the slope of the straight lines that result from plotting the overall resistance as a function of L. The lines pass through a point, having values which correspond to RSD and LR.

7 Determination of RSD and LR

8 6.5.9 MOSFET scaling and hot electron effects

9 Dimensional scaling of MOSFET
Scaling improves packing density, speed, and power dissipation.  (voltage scaled accordingly to keep the internal electric fields more or less constant) Various structural parameters of the MOSFET should be scaled in concert if the device is to keep functioning properly. (by Dennard at IBM) Scaling of depletion widths is achieved indirectly by scaling up doping concentrations.

10 Problem of scaling The internal electric fields in the device would increase if the power supply voltages are kept the same. The longitudinal electric fields in the pinch-off region, and the transverse electric fields across the gate oxide, increase with MOSFET scaling. Problems known as hot electron effects and short channel effects.

11 Hot electron effects When an electron travels from the source to the drain along the channel, it gains kinetic energy at the expense of electrostatic potential energy in the pinch-off region, and becomes a “hot” electron. A few of the electrons can become energetic enough to surmount the 3.1 eV potential barrier between the Si channel and the gate oxide. Some of the injected hot electrons can go through the gate oxide and be collected as gate current, thereby reducing the input impedance. Some of these electrons can be trapped in the gate oxide as fixed charges. This increases the flat band voltage and therefore the VT. These energetic hot carriers can rupture Si-H bonds that exist at the Si-SiO2 interface, creating fast interface states that degrade MOSFET parameters such as transconductance and subthreshold slope. The increase of VT and decrease of slope, and therefore transconductance.

12 Lightly doped drain (LDD)
The solution to hot electron effect is to use what is known as lightly doped drain (LDD). By reducing the doping concentration in the source/drain, the depletion width at the reverse-biased drain-channel junction is increased and the electric field is reduced. Hot carrier effects are less problematic for holes in p-channel MOSFETs than for electrons in n-channel devices for two reasons. The channel mobility of holes is approximately half that of electrons; hence, for the same electric field, there are fewer hot holes than hot electrons. Unfortunately, the lower hole mobility is also responsible for lower drive currents in p-channel than in n-channel. The barrier for hole injection in the valance band between Si and SiO2 is higher (5 eV) than for electrons in the conductance band (3.1 eV). Hence, while LDD is mandatory for n-channel, it is often not used for p-channel devices.

13 “Signature” of hot electron effect
As the electrons travel towards the drain and become hot, they can create secondary electron-hole pairs by impact ionization. The secondary electrons are collected at the drain, and cause the drain current in saturation to increase with drain bias at high voltages, thereby leading to a decrease of the output impedance. The secondary holes are collected at the substrate as substrate current. This current can create circuit problems such as noise or latchup in CMOS circuit. (9.3.1) It can be used as a monitor for hot electron effects. Signature Substrate current initially increases with gate bias (for a fixed, high drain bias), goes through a peak and then decreases. Initially, as the gate bias increases, the drain current increases and thereby provides more primary carriers into the pinch-off region for impact ionization. However, for even higher gate bias, the MOSFET goes from the saturation region into the linear region when the fixed VD drops below VD(sat.) = (VG – VT). The longitudinal electric field in the pinch-off region drops, thereby reducing the impact ionization rates.

14 6.5.10 Drain-induced barrier lowering

15 Short channel effect 1: Drain-induced barrier lowering
If small channel length MOSFETs are not scaled properly, and the source/drain junctions are too deep or the channel doping is too low, there can be unintended electrostatic interactions between the source and the drain known as Drain-Induced Barrier Lowering (DIBL). As the drain bias is increased, the conduction band edge in the drain is pulled down, and the drain-channel depletion width expands. For a long channel MOSFET, unless the gate bias is increased to lower this potential barrier, there is little drain current. For a short channel MOSFET, as the drain bias is raised and the conduction band edge in the drain is pulled down, the source-channel potential barrier is lowered due to DIBL. The problem can be mitigated by applying a substrate reverse bias, because that raises the potential barrier at the source end. The onset of DIBL is sometimes considered to correspond to the drain depletion region expanding and merging with the source depletion region. However, DIBL is ultimately caused by the lowering of the source-junction potential barrier below the built-in potential. This works in spite of the fact that the drain depletion region interacts even more with the source depletion region under such back bias. Once the source-channel barrier is lowered by DIBL, there can be significant drain leakage current, with the gate being unable to shut it off.

16 Drain-induced barrier lowering

17 Solutions to DIBL The source/drain junctions must be made sufficiently shallow (i.e., scaled properly) as the channel lengths are reduced, to prevent DIBL. The channel doping must be made sufficiently high to prevent the drain from being able to control the source junction. Achieved by performing anti-punch-through implant in the channel. Sometimes, instead of such an implant throughout the channel, a localized implant is done only near the source/drains. Known as halo or pocket implants. The higher doping reduces the source/drain depletion widths and prevents their interaction.

18 Lowering of output impedance by DIBL
For short channel MOSFETs, DIBL is related to the electrical modulation of the channel length in the pinch-off region, L. Since the drain current is inversely proportional to the electrical channel length, we get for small pinch-off regions, L. We assume that the fractional change in the channel length is proportional to the drain bias, where is the channel length modulation parameter. This leads to a slope in the output chanracteristics, or a lowering of the output impedance.

19 6.5.11 Short channel effect and narrow width effect

20 Short channel effect 2: Short channel effect
Short channel effect (SCE): VT decreases with L for very short geometries. Electrical field lines are perpendicular to the equipotential contours. The depletion charges that are physically underneath the agte in the approximately triangular regions near the source/drains have their field lines terminate not on the gate, but instead on the source/drains. Hence, these depletion charges should not be counted in the VT expression. Clearly, for a long channel device, the triangular depletion charge regions near the source and drain are very small fraction of the total depletion charge underneath the gate. As the channel lengths are reduced, it results in a VT roll-off as a function of L. This is important because it is hard to control the channel lengths precisely in manufacturing. The channel length variation then lead to problems with VT control.

21 Short channel effect 3: Reverse short channel effect
Reverse short channel effect (RSCE). Due to the interactions between Si point defects that are created during the source/drain implant and the B doping in the channel, causing the B to pile up near the source and drains, and thus raise the VT.

22 Short channel effect 4: Narrow width effect
VT goes up as the channel width Z is reduced for very narrow devices. Some of the depletion charges under the LOCOS isolation regions have field lines electrically terminating on the gate. The depletion charge belongs to the gate. The effect becomes quite important as the widths are reduced below 1m.

23 6.5.12 Gate induced drain leakage
Gate induced drain leakage (GIDL): For even more negative gate biases we find that the off-state leakage current actually goes up as we try to turn off the MOSFET more for high VD.

24 Gate induced drain leakage
Gate induced drain leakage (GIDL): For even more negative gate biases we find that the off-state leakage current actually goes up as we try to turn off the MOSFET more for high VD. As the gate is made more negative, a depletion region forms in the n-type drain. Since the drain doping is high, the depletion widths tend to be narrow. If the band-bending is more than the band gap Eg across a narrow depletion region, the conditions are conductive to band-to-band tunneling in this region, thereby creating electron-hole pairs. The electrons then go to the drain as GIDL. It must be emphasized that the tunneling is not through the gate oxide, but entirely in the Si drain region.

25 Moderate doping for GIDL
For GIDL to occur, the drain doping level should be moderate (~1018 cm-3). If it is much lower that this, the depletion widths and tunneling barriers are too wide for tunneling. If the doping in the drain is very high, most of the voltage drops in the gate oxide, and the band-bending in the Si drain region drops below the value Eg. No tunneling occurs.. GIDL is an important factor in limiting the off-state leakage current in state-of-the-art MOSFETs.

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