The compound described by HeSiO2 is High (Orthorhombic) Tridymite-derived structured and crystallizes in the trigonal R-3c space group. The structure consists of twelve 7440-59-7 atoms inside a SiO2 framework. In the SiO2 framework, Si(1) is bonded to one O(1) and three equivalent O(2) atoms to form corner-sharing SiO4 tetrahedra. There are two inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to two equivalent Si(1) atoms. In the second O site, O(2) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_HeSiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.148
_cell_length_b   9.148
_cell_length_c   9.148
_cell_angle_alpha   32.965
_cell_angle_beta   32.965
_cell_angle_gamma   32.965
_symmetry_Int_Tables_number   1
_cell_volume   201.710
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  He  He0  1  0.680  0.680  0.680  1.0
  He  He1  1  0.320  0.320  0.320  1.0
  He  He2  1  0.180  0.180  0.180  1.0
  He  He3  1  0.820  0.820  0.820  1.0
  Si  Si4  1  0.938  0.938  0.938  1.0
  Si  Si5  1  0.062  0.062  0.062  1.0
  Si  Si6  1  0.438  0.438  0.438  1.0
  Si  Si7  1  0.562  0.562  0.562  1.0
  O  O8  1  0.000  0.000  0.000  1.0
  O  O9  1  0.500  0.500  0.500  1.0
  O  O10  1  0.694  0.250  0.806  1.0
  O  O11  1  0.250  0.806  0.694  1.0
  O  O12  1  0.806  0.694  0.250  1.0
  O  O13  1  0.306  0.750  0.194  1.0
  O  O14  1  0.750  0.194  0.306  1.0
  O  O15  1  0.194  0.306  0.750  1.0
[/CIF]
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The compound described by HeSiO2 is High (Orthorhombic) Tridymite-derived structured and crystallizes in the trigonal R-3c space group. The structure consists of twelve 7440-59-7 atoms inside a SiO2 framework. In the SiO2 framework, Si(1) is bonded to one O(1) and three equivalent O(2) atoms to form corner-sharing SiO4 tetrahedra. There are two inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to two equivalent Si(1) atoms. In the second O site, O(2) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_HeSiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.148
_cell_length_b   9.148
_cell_length_c   9.148
_cell_angle_alpha   32.965
_cell_angle_beta   32.965
_cell_angle_gamma   32.965
_symmetry_Int_Tables_number   1
_cell_volume   201.710
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  He  He0  1  0.680  0.680  0.680  1.0
  He  He1  1  0.320  0.320  0.320  1.0
  He  He2  1  0.180  0.180  0.180  1.0
  He  He3  1  0.820  0.820  0.820  1.0
  Si  Si4  1  0.938  0.938  0.938  1.0
  Si  Si5  1  0.062  0.062  0.062  1.0
  Si  Si6  1  0.438  0.438  0.438  1.0
  Si  Si7  1  0.562  0.562  0.562  1.0
  O  O8  1  0.000  0.000  0.000  1.0
  O  O9  1  0.500  0.500  0.500  1.0
  O  O10  1  0.694  0.250  0.806  1.0
  O  O11  1  0.250  0.806  0.694  1.0
  O  O12  1  0.806  0.694  0.250  1.0
  O  O13  1  0.306  0.750  0.194  1.0
  O  O14  1  0.750  0.194  0.306  1.0
  O  O15  1  0.194  0.306  0.750  1.0
[/CIF]
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