The structure described by SiC is Moissanite-6H-like structured and crystallizes in the hexagonal P6_3mc space group. There are four inequivalent Si sites. In the first Si site, Si(1,6,7) is bonded to one C(3,4,7) and three equivalent C(8) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2,3) is bonded to one C(5,6) and three equivalent C(3,4,7) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(4,8) is bonded to one C(1,2) and three equivalent C(5,6) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(5) is bonded to one C(8) and three equivalent C(3,4,7) atoms to form corner-sharing SiC4 tetrahedra. There are four inequivalent C sites. In the first C site, C(1,2) is bonded to one Si(4,8) and three equivalent Si(1,6,7) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(3,4,7) is bonded to one Si(1,6,7) and three equivalent Si(2,3) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(5,6) is bonded to one Si(2,3) and three equivalent Si(4,8) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(8) is bonded to one Si(5) and three equivalent Si(1,6,7) atoms to form corner-sharing CSi4 tetrahedra. is represented by the CIF file [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.076
_cell_length_b   3.076
_cell_length_c   40.268
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   330.063
_cell_formula_units_Z   16
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.333  0.667  0.813  1.0
  Si  Si1  1  0.333  0.667  0.562  1.0
  Si  Si2  1  0.000  0.000  0.375  1.0
  Si  Si3  1  0.667  0.333  0.937  1.0
  Si  Si4  1  0.667  0.333  0.062  1.0
  Si  Si5  1  0.000  0.000  0.250  1.0
  Si  Si6  1  0.000  0.000  0.875  1.0
  Si  Si7  1  0.667  0.333  0.687  1.0
  Si  Si8  1  0.667  0.333  0.500  1.0
  Si  Si9  1  0.333  0.667  0.437  1.0
  Si  Si10  1  0.333  0.667  1.000  1.0
  Si  Si11  1  0.000  0.000  0.750  1.0
  Si  Si12  1  0.667  0.333  0.313  1.0
  Si  Si13  1  0.000  0.000  0.625  1.0
  Si  Si14  1  0.333  0.667  0.187  1.0
  Si  Si15  1  0.000  0.000  0.125  1.0
  C  C16  1  0.000  0.000  0.172  1.0
  C  C17  1  0.333  0.667  0.484  1.0
  C  C18  1  0.667  0.333  0.360  1.0
  C  C19  1  0.333  0.667  0.047  1.0
  C  C20  1  0.667  0.333  0.547  1.0
  C  C21  1  0.000  0.000  0.922  1.0
  C  C22  1  0.333  0.667  0.609  1.0
  C  C23  1  0.667  0.333  0.734  1.0
  C  C24  1  0.000  0.000  0.422  1.0
  C  C25  1  0.667  0.333  0.984  1.0
  C  C26  1  0.000  0.000  0.797  1.0
  C  C27  1  0.667  0.333  0.109  1.0
  C  C28  1  0.333  0.667  0.860  1.0
  C  C29  1  0.000  0.000  0.297  1.0
  C  C30  1  0.000  0.000  0.672  1.0
  C  C31  1  0.333  0.667  0.234  1.0
[/CIF]
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The structure described by SiC is Moissanite-6H-like structured and crystallizes in the hexagonal P6_3mc space group. There are four inequivalent Si sites. In the first Si site, Si(1,6,7) is bonded to one C(3,4,7) and three equivalent C(8) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2,3) is bonded to one C(5,6) and three equivalent C(3,4,7) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(4,8) is bonded to one C(1,2) and three equivalent C(5,6) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(5) is bonded to one C(8) and three equivalent C(3,4,7) atoms to form corner-sharing SiC4 tetrahedra. There are four inequivalent C sites. In the first C site, C(1,2) is bonded to one Si(4,8) and three equivalent Si(1,6,7) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(3,4,7) is bonded to one Si(1,6,7) and three equivalent Si(2,3) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(5,6) is bonded to one Si(2,3) and three equivalent Si(4,8) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(8) is bonded to one Si(5) and three equivalent Si(1,6,7) atoms to form corner-sharing CSi4 tetrahedra. is represented by the CIF file [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.076
_cell_length_b   3.076
_cell_length_c   40.268
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   330.063
_cell_formula_units_Z   16
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.333  0.667  0.813  1.0
  Si  Si1  1  0.333  0.667  0.562  1.0
  Si  Si2  1  0.000  0.000  0.375  1.0
  Si  Si3  1  0.667  0.333  0.937  1.0
  Si  Si4  1  0.667  0.333  0.062  1.0
  Si  Si5  1  0.000  0.000  0.250  1.0
  Si  Si6  1  0.000  0.000  0.875  1.0
  Si  Si7  1  0.667  0.333  0.687  1.0
  Si  Si8  1  0.667  0.333  0.500  1.0
  Si  Si9  1  0.333  0.667  0.437  1.0
  Si  Si10  1  0.333  0.667  1.000  1.0
  Si  Si11  1  0.000  0.000  0.750  1.0
  Si  Si12  1  0.667  0.333  0.313  1.0
  Si  Si13  1  0.000  0.000  0.625  1.0
  Si  Si14  1  0.333  0.667  0.187  1.0
  Si  Si15  1  0.000  0.000  0.125  1.0
  C  C16  1  0.000  0.000  0.172  1.0
  C  C17  1  0.333  0.667  0.484  1.0
  C  C18  1  0.667  0.333  0.360  1.0
  C  C19  1  0.333  0.667  0.047  1.0
  C  C20  1  0.667  0.333  0.547  1.0
  C  C21  1  0.000  0.000  0.922  1.0
  C  C22  1  0.333  0.667  0.609  1.0
  C  C23  1  0.667  0.333  0.734  1.0
  C  C24  1  0.000  0.000  0.422  1.0
  C  C25  1  0.667  0.333  0.984  1.0
  C  C26  1  0.000  0.000  0.797  1.0
  C  C27  1  0.667  0.333  0.109  1.0
  C  C28  1  0.333  0.667  0.860  1.0
  C  C29  1  0.000  0.000  0.297  1.0
  C  C30  1  0.000  0.000  0.672  1.0
  C  C31  1  0.333  0.667  0.234  1.0
[/CIF]
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