The material structure described by Ho4GeSi3 crystallizes in the orthorhombic Pmm2 space group. There are four inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 7-coordinate geometry to one Ge(1), two equivalent Si(1), and four equivalent Si(2) atoms. In the second Ho site, Ho(2) is bonded in a 7-coordinate geometry to two equivalent Ge(1), one Si(1), and four equivalent Si(3) atoms. In the third Ho site, Ho(3) is bonded in a 7-coordinate geometry to four equivalent Ge(1), one Si(2), and two equivalent Si(3) atoms. In the fourth Ho site, Ho(4) is bonded in a 7-coordinate geometry to one Si(3), two equivalent Si(2), and four equivalent Si(1) atoms. Ge(1) is bonded in a 9-coordinate geometry to one Ho(1), two equivalent Ho(2), four equivalent Ho(3), and two equivalent Si(3) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to one Ho(2), two equivalent Ho(1), four equivalent Ho(4), and two equivalent Si(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Ho(3), two equivalent Ho(4), four equivalent Ho(1), and two equivalent Si(1) atoms. In the third Si site, Si(3) is bonded in a 9-coordinate geometry to one Ho(4), two equivalent Ho(3), four equivalent Ho(2), and two equivalent Ge(1) atoms. is represented by the CIF card [CIF]
data_Ho4Si3Ge
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.836
_cell_length_b   4.245
_cell_length_c   10.509
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   171.138
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.000  0.000  0.138  1.0
  Ho  Ho1  1  0.000  0.500  0.641  1.0
  Ho  Ho2  1  0.500  0.500  0.359  1.0
  Ho  Ho3  1  0.500  0.000  0.860  1.0
  Si  Si4  1  0.000  0.500  0.924  1.0
  Si  Si5  1  0.500  0.500  0.077  1.0
  Si  Si6  1  0.500  0.000  0.581  1.0
  Ge  Ge7  1  0.000  0.000  0.420  1.0
[/CIF]
.
The material structure described by Ho4GeSi3 crystallizes in the orthorhombic Pmm2 space group. There are four inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 7-coordinate geometry to one Ge(1), two equivalent Si(1), and four equivalent Si(2) atoms. In the second Ho site, Ho(2) is bonded in a 7-coordinate geometry to two equivalent Ge(1), one Si(1), and four equivalent Si(3) atoms. In the third Ho site, Ho(3) is bonded in a 7-coordinate geometry to four equivalent Ge(1), one Si(2), and two equivalent Si(3) atoms. In the fourth Ho site, Ho(4) is bonded in a 7-coordinate geometry to one Si(3), two equivalent Si(2), and four equivalent Si(1) atoms. Ge(1) is bonded in a 9-coordinate geometry to one Ho(1), two equivalent Ho(2), four equivalent Ho(3), and two equivalent Si(3) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to one Ho(2), two equivalent Ho(1), four equivalent Ho(4), and two equivalent Si(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Ho(3), two equivalent Ho(4), four equivalent Ho(1), and two equivalent Si(1) atoms. In the third Si site, Si(3) is bonded in a 9-coordinate geometry to one Ho(4), two equivalent Ho(3), four equivalent Ho(2), and two equivalent Ge(1) atoms. is represented by the CIF card [CIF]
data_Ho4Si3Ge
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.836
_cell_length_b   4.245
_cell_length_c   10.509
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   171.138
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.000  0.000  0.138  1.0
  Ho  Ho1  1  0.000  0.500  0.641  1.0
  Ho  Ho2  1  0.500  0.500  0.359  1.0
  Ho  Ho3  1  0.500  0.000  0.860  1.0
  Si  Si4  1  0.000  0.500  0.924  1.0
  Si  Si5  1  0.500  0.500  0.077  1.0
  Si  Si6  1  0.500  0.000  0.581  1.0
  Ge  Ge7  1  0.000  0.000  0.420  1.0
[/CIF]
.