The structure described by InHSeO4 crystallizes in the triclinic P-1 space group. There are two inequivalent In sites. In the first In site, In(1) is bonded to one O(1), one O(2), one O(3), one O(5), and two equivalent O(6) atoms to form a mixture of corner and edge-sharing InO6 octahedra. The corner-sharing octahedral tilt angles range from 44-49°. In the second In site, In(2) is bonded to one O(3), one O(4), one O(5), one O(8), and two equivalent O(7) atoms to form a mixture of corner and edge-sharing InO6 octahedra. The corner-sharing octahedral tilt angles range from 44-49°. There are two inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one O(3) atom. In the second H site, H(2) is bonded in a single-bond geometry to one O(5) atom. There are two inequivalent Se sites. In the first Se site, Se(1) is bonded in a trigonal non-coplanar geometry to one O(2), one O(6), and one O(8) atom. In the second Se site, Se(2) is bonded in a trigonal non-coplanar geometry to one O(1), one O(4), and one O(7) atom. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one In(1) and one Se(2) atom. In the second O site, O(2) is bonded in a bent 120 degrees geometry to one In(1) and one Se(1) atom. In the third O site, O(3) is bonded in a distorted single-bond geometry to one In(1), one In(2), and one H(1) atom. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to one In(2) and one Se(2) atom. In the fifth O site, O(5) is bonded in a distorted trigonal planar geometry to one In(1), one In(2), and one H(2) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to two equivalent In(1) and one Se(1) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to two equivalent In(2) and one Se(2) atom. In the eighth O site, O(8) is bonded in a bent 120 degrees geometry to one In(2) and one Se(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_InHSeO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.782
_cell_length_b   8.190
_cell_length_c   8.302
_cell_angle_alpha   87.635
_cell_angle_beta   79.515
_cell_angle_gamma   83.039
_symmetry_Int_Tables_number   1
_cell_volume   383.629
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.810  0.687  0.485  1.0
  In  In1  1  0.397  0.977  0.813  1.0
  In  In2  1  0.603  0.023  0.187  1.0
  In  In3  1  0.190  0.313  0.515  1.0
  H  H4  1  0.651  0.239  0.393  1.0
  H  H5  1  0.994  0.075  0.698  1.0
  H  H6  1  0.006  0.925  0.302  1.0
  H  H7  1  0.349  0.761  0.607  1.0
  Se  Se8  1  0.397  0.644  0.236  1.0
  Se  Se9  1  0.929  0.731  0.880  1.0
  Se  Se10  1  0.603  0.356  0.764  1.0
  Se  Se11  1  0.071  0.269  0.120  1.0
  O  O12  1  0.025  0.213  0.324  1.0
  O  O13  1  0.652  0.569  0.304  1.0
  O  O14  1  0.496  0.784  0.641  1.0
  O  O15  1  0.142  0.817  0.952  1.0
  O  O16  1  0.851  0.885  0.314  1.0
  O  O17  1  0.149  0.115  0.686  1.0
  O  O18  1  0.172  0.564  0.386  1.0
  O  O19  1  0.828  0.436  0.614  1.0
  O  O20  1  0.666  0.865  0.961  1.0
  O  O21  1  0.348  0.431  0.696  1.0
  O  O22  1  0.649  0.153  0.706  1.0
  O  O23  1  0.351  0.847  0.294  1.0
  O  O24  1  0.975  0.787  0.676  1.0
  O  O25  1  0.504  0.216  0.359  1.0
  O  O26  1  0.334  0.135  0.039  1.0
  O  O27  1  0.858  0.183  0.048  1.0
[/CIF]
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The structure described by InHSeO4 crystallizes in the triclinic P-1 space group. There are two inequivalent In sites. In the first In site, In(1) is bonded to one O(1), one O(2), one O(3), one O(5), and two equivalent O(6) atoms to form a mixture of corner and edge-sharing InO6 octahedra. The corner-sharing octahedral tilt angles range from 44-49°. In the second In site, In(2) is bonded to one O(3), one O(4), one O(5), one O(8), and two equivalent O(7) atoms to form a mixture of corner and edge-sharing InO6 octahedra. The corner-sharing octahedral tilt angles range from 44-49°. There are two inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one O(3) atom. In the second H site, H(2) is bonded in a single-bond geometry to one O(5) atom. There are two inequivalent Se sites. In the first Se site, Se(1) is bonded in a trigonal non-coplanar geometry to one O(2), one O(6), and one O(8) atom. In the second Se site, Se(2) is bonded in a trigonal non-coplanar geometry to one O(1), one O(4), and one O(7) atom. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one In(1) and one Se(2) atom. In the second O site, O(2) is bonded in a bent 120 degrees geometry to one In(1) and one Se(1) atom. In the third O site, O(3) is bonded in a distorted single-bond geometry to one In(1), one In(2), and one H(1) atom. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to one In(2) and one Se(2) atom. In the fifth O site, O(5) is bonded in a distorted trigonal planar geometry to one In(1), one In(2), and one H(2) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to two equivalent In(1) and one Se(1) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to two equivalent In(2) and one Se(2) atom. In the eighth O site, O(8) is bonded in a bent 120 degrees geometry to one In(2) and one Se(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_InHSeO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.782
_cell_length_b   8.190
_cell_length_c   8.302
_cell_angle_alpha   87.635
_cell_angle_beta   79.515
_cell_angle_gamma   83.039
_symmetry_Int_Tables_number   1
_cell_volume   383.629
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.810  0.687  0.485  1.0
  In  In1  1  0.397  0.977  0.813  1.0
  In  In2  1  0.603  0.023  0.187  1.0
  In  In3  1  0.190  0.313  0.515  1.0
  H  H4  1  0.651  0.239  0.393  1.0
  H  H5  1  0.994  0.075  0.698  1.0
  H  H6  1  0.006  0.925  0.302  1.0
  H  H7  1  0.349  0.761  0.607  1.0
  Se  Se8  1  0.397  0.644  0.236  1.0
  Se  Se9  1  0.929  0.731  0.880  1.0
  Se  Se10  1  0.603  0.356  0.764  1.0
  Se  Se11  1  0.071  0.269  0.120  1.0
  O  O12  1  0.025  0.213  0.324  1.0
  O  O13  1  0.652  0.569  0.304  1.0
  O  O14  1  0.496  0.784  0.641  1.0
  O  O15  1  0.142  0.817  0.952  1.0
  O  O16  1  0.851  0.885  0.314  1.0
  O  O17  1  0.149  0.115  0.686  1.0
  O  O18  1  0.172  0.564  0.386  1.0
  O  O19  1  0.828  0.436  0.614  1.0
  O  O20  1  0.666  0.865  0.961  1.0
  O  O21  1  0.348  0.431  0.696  1.0
  O  O22  1  0.649  0.153  0.706  1.0
  O  O23  1  0.351  0.847  0.294  1.0
  O  O24  1  0.975  0.787  0.676  1.0
  O  O25  1  0.504  0.216  0.359  1.0
  O  O26  1  0.334  0.135  0.039  1.0
  O  O27  1  0.858  0.183  0.048  1.0
[/CIF]
.