The material structure described by KBSi2O6 crystallizes in the orthorhombic P2_12_12_1 space group. K(1) is bonded in a 10-coordinate geometry to one O(5), one O(6), two equivalent O(1), two equivalent O(2), two equivalent O(3), and two equivalent O(4) atoms. B(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form BO4 tetrahedra that share  a cornercorner with one Si(2)O4 tetrahedra and corners with three equivalent Si(1)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Si(2)O4 tetrahedra and corners with three equivalent B(1)O4 tetrahedra. In the second Si site, Si(2) is bonded to one O(4), one O(6), and two equivalent O(5) atoms to form SiO4 tetrahedra that share  a cornercorner with one B(1)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. There are six inequivalent O sites. In the first O site, O(5) is bonded in a distorted bent 150 degrees geometry to one K(1) and two equivalent Si(2) atoms. In the second O site, O(6) is bonded in a distorted bent 150 degrees geometry to one K(1), one Si(1), and one Si(2) atom. In the third O site, O(1) is bonded in a 2-coordinate geometry to two equivalent K(1), one B(1), and one Si(1) atom. In the fourth O site, O(2) is bonded in a 2-coordinate geometry to two equivalent K(1), one B(1), and one Si(1) atom. In the fifth O site, O(3) is bonded in a 2-coordinate geometry to two equivalent K(1), one B(1), and one Si(1) atom. In the sixth O site, O(4) is bonded in a distorted bent 150 degrees geometry to two equivalent K(1), one B(1), and one Si(2) atom. is represented by the CIF card [CIF]
data_KSi2BO6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.777
_cell_length_b   10.097
_cell_length_c   10.565
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   509.546
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.798  0.966  0.811  1.0
  K  K1  1  0.702  0.034  0.311  1.0
  K  K2  1  0.298  0.534  0.189  1.0
  K  K3  1  0.202  0.466  0.689  1.0
  Si  Si4  1  0.786  0.609  0.935  1.0
  Si  Si5  1  0.714  0.391  0.435  1.0
  Si  Si6  1  0.286  0.891  0.065  1.0
  Si  Si7  1  0.214  0.109  0.565  1.0
  Si  Si8  1  0.266  0.802  0.576  1.0
  Si  Si9  1  0.234  0.198  0.076  1.0
  Si  Si10  1  0.766  0.698  0.424  1.0
  Si  Si11  1  0.734  0.302  0.924  1.0
  B  B12  1  0.289  0.731  0.843  1.0
  B  B13  1  0.211  0.269  0.343  1.0
  B  B14  1  0.789  0.769  0.157  1.0
  B  B15  1  0.711  0.231  0.657  1.0
  O  O16  1  0.989  0.694  0.842  1.0
  O  O17  1  0.511  0.306  0.342  1.0
  O  O18  1  0.489  0.806  0.158  1.0
  O  O19  1  0.011  0.194  0.658  1.0
  O  O20  1  0.330  0.856  0.915  1.0
  O  O21  1  0.170  0.144  0.415  1.0
  O  O22  1  0.830  0.644  0.085  1.0
  O  O23  1  0.670  0.356  0.585  1.0
  O  O24  1  0.457  0.621  0.895  1.0
  O  O25  1  0.043  0.379  0.395  1.0
  O  O26  1  0.957  0.879  0.105  1.0
  O  O27  1  0.543  0.121  0.605  1.0
  O  O28  1  0.382  0.756  0.711  1.0
  O  O29  1  0.118  0.244  0.211  1.0
  O  O30  1  0.882  0.744  0.289  1.0
  O  O31  1  0.618  0.256  0.789  1.0
  O  O32  1  0.025  0.698  0.527  1.0
  O  O33  1  0.475  0.302  0.027  1.0
  O  O34  1  0.525  0.802  0.473  1.0
  O  O35  1  0.975  0.198  0.973  1.0
  O  O36  1  0.129  0.950  0.579  1.0
  O  O37  1  0.371  0.050  0.079  1.0
  O  O38  1  0.629  0.550  0.421  1.0
  O  O39  1  0.871  0.450  0.921  1.0
[/CIF]
.
The material structure described by KBSi2O6 crystallizes in the orthorhombic P2_12_12_1 space group. K(1) is bonded in a 10-coordinate geometry to one O(5), one O(6), two equivalent O(1), two equivalent O(2), two equivalent O(3), and two equivalent O(4) atoms. B(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form BO4 tetrahedra that share  a cornercorner with one Si(2)O4 tetrahedra and corners with three equivalent Si(1)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Si(2)O4 tetrahedra and corners with three equivalent B(1)O4 tetrahedra. In the second Si site, Si(2) is bonded to one O(4), one O(6), and two equivalent O(5) atoms to form SiO4 tetrahedra that share  a cornercorner with one B(1)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. There are six inequivalent O sites. In the first O site, O(5) is bonded in a distorted bent 150 degrees geometry to one K(1) and two equivalent Si(2) atoms. In the second O site, O(6) is bonded in a distorted bent 150 degrees geometry to one K(1), one Si(1), and one Si(2) atom. In the third O site, O(1) is bonded in a 2-coordinate geometry to two equivalent K(1), one B(1), and one Si(1) atom. In the fourth O site, O(2) is bonded in a 2-coordinate geometry to two equivalent K(1), one B(1), and one Si(1) atom. In the fifth O site, O(3) is bonded in a 2-coordinate geometry to two equivalent K(1), one B(1), and one Si(1) atom. In the sixth O site, O(4) is bonded in a distorted bent 150 degrees geometry to two equivalent K(1), one B(1), and one Si(2) atom. is represented by the CIF card [CIF]
data_KSi2BO6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.777
_cell_length_b   10.097
_cell_length_c   10.565
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   509.546
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.798  0.966  0.811  1.0
  K  K1  1  0.702  0.034  0.311  1.0
  K  K2  1  0.298  0.534  0.189  1.0
  K  K3  1  0.202  0.466  0.689  1.0
  Si  Si4  1  0.786  0.609  0.935  1.0
  Si  Si5  1  0.714  0.391  0.435  1.0
  Si  Si6  1  0.286  0.891  0.065  1.0
  Si  Si7  1  0.214  0.109  0.565  1.0
  Si  Si8  1  0.266  0.802  0.576  1.0
  Si  Si9  1  0.234  0.198  0.076  1.0
  Si  Si10  1  0.766  0.698  0.424  1.0
  Si  Si11  1  0.734  0.302  0.924  1.0
  B  B12  1  0.289  0.731  0.843  1.0
  B  B13  1  0.211  0.269  0.343  1.0
  B  B14  1  0.789  0.769  0.157  1.0
  B  B15  1  0.711  0.231  0.657  1.0
  O  O16  1  0.989  0.694  0.842  1.0
  O  O17  1  0.511  0.306  0.342  1.0
  O  O18  1  0.489  0.806  0.158  1.0
  O  O19  1  0.011  0.194  0.658  1.0
  O  O20  1  0.330  0.856  0.915  1.0
  O  O21  1  0.170  0.144  0.415  1.0
  O  O22  1  0.830  0.644  0.085  1.0
  O  O23  1  0.670  0.356  0.585  1.0
  O  O24  1  0.457  0.621  0.895  1.0
  O  O25  1  0.043  0.379  0.395  1.0
  O  O26  1  0.957  0.879  0.105  1.0
  O  O27  1  0.543  0.121  0.605  1.0
  O  O28  1  0.382  0.756  0.711  1.0
  O  O29  1  0.118  0.244  0.211  1.0
  O  O30  1  0.882  0.744  0.289  1.0
  O  O31  1  0.618  0.256  0.789  1.0
  O  O32  1  0.025  0.698  0.527  1.0
  O  O33  1  0.475  0.302  0.027  1.0
  O  O34  1  0.525  0.802  0.473  1.0
  O  O35  1  0.975  0.198  0.973  1.0
  O  O36  1  0.129  0.950  0.579  1.0
  O  O37  1  0.371  0.050  0.079  1.0
  O  O38  1  0.629  0.550  0.421  1.0
  O  O39  1  0.871  0.450  0.921  1.0
[/CIF]
.