The material structure described by Gd2Si4CN6 crystallizes in the monoclinic P2_1/c space group. There are two inequivalent Gd sites. In the first Gd site, Gd(1) is bonded in a 5-coordinate geometry to one N(3), one N(4), one N(5), and two equivalent N(2) atoms. In the second Gd site, Gd(2) is bonded in a 6-coordinate geometry to one N(1), one N(3), one N(4), one N(5), and two equivalent N(6) atoms. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(1), one N(2), one N(3), and one N(6) atom to form corner-sharing SiCN3 tetrahedra. In the second Si site, Si(2) is bonded to one C(1), one N(1), one N(2), and one N(4) atom to form corner-sharing SiCN3 tetrahedra. In the third Si site, Si(3) is bonded to one C(1), one N(1), one N(3), and one N(5) atom to form corner-sharing SiCN3 tetrahedra. In the fourth Si site, Si(4) is bonded to one C(1), one N(4), one N(5), and one N(6) atom to form corner-sharing SiCN3 tetrahedra. C(1) is bonded to one Si(1), one Si(2), one Si(3), and one Si(4) atom to form CSi4 tetrahedra that share corners with two equivalent N(2)Gd2Si2 tetrahedra, corners with two equivalent N(3)Gd2Si2 tetrahedra, corners with two equivalent N(6)Gd2Si2 tetrahedra, and corners with two equivalent N(5)Gd2Si2 trigonal pyramids. There are six inequivalent N sites. In the first N site, N(2) is bonded to two equivalent Gd(1), one Si(1), and one Si(2) atom to form NGd2Si2 tetrahedra that share  a cornercorner with one N(6)Gd2Si2 tetrahedra, corners with two equivalent C(1)Si4 tetrahedra, corners with three equivalent N(3)Gd2Si2 tetrahedra, corners with two equivalent N(5)Gd2Si2 trigonal pyramids, and  an edgeedge with one N(2)Gd2Si2 tetrahedra. In the second N site, N(3) is bonded to one Gd(1), one Gd(2), one Si(1), and one Si(3) atom to form distorted NGd2Si2 tetrahedra that share corners with two equivalent C(1)Si4 tetrahedra, corners with three equivalent N(2)Gd2Si2 tetrahedra, corners with three equivalent N(6)Gd2Si2 tetrahedra,  a cornercorner with one N(5)Gd2Si2 trigonal pyramid, and  an edgeedge with one N(5)Gd2Si2 trigonal pyramid. In the third N site, N(4) is bonded in a 4-coordinate geometry to one Gd(1), one Gd(2), one Si(2), and one Si(4) atom. In the fourth N site, N(5) is bonded to one Gd(1), one Gd(2), one Si(3), and one Si(4) atom to form distorted NGd2Si2 trigonal pyramids that share  a cornercorner with one N(3)Gd2Si2 tetrahedra, corners with two equivalent C(1)Si4 tetrahedra, corners with two equivalent N(2)Gd2Si2 tetrahedra, corners with three equivalent N(6)Gd2Si2 tetrahedra, and  an edgeedge with one N(3)Gd2Si2 tetrahedra. In the fifth N site, N(6) is bonded to two equivalent Gd(2), one Si(1), and one Si(4) atom to form distorted NGd2Si2 tetrahedra that share  a cornercorner with one N(2)Gd2Si2 tetrahedra, corners with two equivalent C(1)Si4 tetrahedra, corners with three equivalent N(3)Gd2Si2 tetrahedra, corners with three equivalent N(5)Gd2Si2 trigonal pyramids, and  an edgeedge with one N(6)Gd2Si2 tetrahedra. In the sixth N site, N(1) is bonded in a distorted trigonal planar geometry to one Gd(2), one Si(2), and one Si(3) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Gd2Si4CN6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.014
_cell_length_b   6.000
_cell_length_c   12.016
_cell_angle_alpha   60.428
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   627.909
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Gd  Gd0  1  0.565  0.668  0.095  1.0
  Gd  Gd1  1  0.065  0.332  0.405  1.0
  Gd  Gd2  1  0.435  0.332  0.905  1.0
  Gd  Gd3  1  0.935  0.668  0.595  1.0
  Gd  Gd4  1  0.416  0.338  0.419  1.0
  Gd  Gd5  1  0.916  0.662  0.081  1.0
  Gd  Gd6  1  0.584  0.662  0.581  1.0
  Gd  Gd7  1  0.084  0.338  0.919  1.0
  Si  Si8  1  0.481  0.994  0.249  1.0
  Si  Si9  1  0.981  0.006  0.251  1.0
  Si  Si10  1  0.519  0.006  0.751  1.0
  Si  Si11  1  0.019  0.994  0.749  1.0
  Si  Si12  1  0.213  0.834  0.421  1.0
  Si  Si13  1  0.713  0.166  0.079  1.0
  Si  Si14  1  0.787  0.166  0.579  1.0
  Si  Si15  1  0.287  0.834  0.921  1.0
  Si  Si16  1  0.207  0.799  0.177  1.0
  Si  Si17  1  0.707  0.201  0.323  1.0
  Si  Si18  1  0.793  0.201  0.823  1.0
  Si  Si19  1  0.293  0.799  0.677  1.0
  Si  Si20  1  0.228  0.323  0.159  1.0
  Si  Si21  1  0.728  0.677  0.341  1.0
  Si  Si22  1  0.772  0.677  0.841  1.0
  Si  Si23  1  0.272  0.323  0.659  1.0
  C  C24  1  0.293  0.977  0.252  1.0
  C  C25  1  0.793  0.023  0.248  1.0
  C  C26  1  0.707  0.023  0.748  1.0
  C  C27  1  0.207  0.977  0.752  1.0
  N  N28  1  0.212  0.954  0.011  1.0
  N  N29  1  0.712  0.046  0.489  1.0
  N  N30  1  0.788  0.046  0.989  1.0
  N  N31  1  0.288  0.954  0.511  1.0
  N  N32  1  0.046  0.940  0.399  1.0
  N  N33  1  0.546  0.060  0.101  1.0
  N  N34  1  0.954  0.060  0.601  1.0
  N  N35  1  0.454  0.940  0.899  1.0
  N  N36  1  0.038  0.764  0.222  1.0
  N  N37  1  0.538  0.236  0.278  1.0
  N  N38  1  0.962  0.236  0.778  1.0
  N  N39  1  0.462  0.764  0.722  1.0
  N  N40  1  0.289  0.496  0.002  1.0
  N  N41  1  0.789  0.504  0.498  1.0
  N  N42  1  0.711  0.504  0.998  1.0
  N  N43  1  0.211  0.496  0.502  1.0
  N  N44  1  0.264  0.482  0.245  1.0
  N  N45  1  0.764  0.518  0.255  1.0
  N  N46  1  0.736  0.518  0.755  1.0
  N  N47  1  0.236  0.482  0.745  1.0
  N  N48  1  0.054  0.298  0.139  1.0
  N  N49  1  0.554  0.702  0.361  1.0
  N  N50  1  0.946  0.702  0.861  1.0
  N  N51  1  0.446  0.298  0.639  1.0
[/CIF]
.
The material structure described by Gd2Si4CN6 crystallizes in the monoclinic P2_1/c space group. There are two inequivalent Gd sites. In the first Gd site, Gd(1) is bonded in a 5-coordinate geometry to one N(3), one N(4), one N(5), and two equivalent N(2) atoms. In the second Gd site, Gd(2) is bonded in a 6-coordinate geometry to one N(1), one N(3), one N(4), one N(5), and two equivalent N(6) atoms. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(1), one N(2), one N(3), and one N(6) atom to form corner-sharing SiCN3 tetrahedra. In the second Si site, Si(2) is bonded to one C(1), one N(1), one N(2), and one N(4) atom to form corner-sharing SiCN3 tetrahedra. In the third Si site, Si(3) is bonded to one C(1), one N(1), one N(3), and one N(5) atom to form corner-sharing SiCN3 tetrahedra. In the fourth Si site, Si(4) is bonded to one C(1), one N(4), one N(5), and one N(6) atom to form corner-sharing SiCN3 tetrahedra. C(1) is bonded to one Si(1), one Si(2), one Si(3), and one Si(4) atom to form CSi4 tetrahedra that share corners with two equivalent N(2)Gd2Si2 tetrahedra, corners with two equivalent N(3)Gd2Si2 tetrahedra, corners with two equivalent N(6)Gd2Si2 tetrahedra, and corners with two equivalent N(5)Gd2Si2 trigonal pyramids. There are six inequivalent N sites. In the first N site, N(2) is bonded to two equivalent Gd(1), one Si(1), and one Si(2) atom to form NGd2Si2 tetrahedra that share  a cornercorner with one N(6)Gd2Si2 tetrahedra, corners with two equivalent C(1)Si4 tetrahedra, corners with three equivalent N(3)Gd2Si2 tetrahedra, corners with two equivalent N(5)Gd2Si2 trigonal pyramids, and  an edgeedge with one N(2)Gd2Si2 tetrahedra. In the second N site, N(3) is bonded to one Gd(1), one Gd(2), one Si(1), and one Si(3) atom to form distorted NGd2Si2 tetrahedra that share corners with two equivalent C(1)Si4 tetrahedra, corners with three equivalent N(2)Gd2Si2 tetrahedra, corners with three equivalent N(6)Gd2Si2 tetrahedra,  a cornercorner with one N(5)Gd2Si2 trigonal pyramid, and  an edgeedge with one N(5)Gd2Si2 trigonal pyramid. In the third N site, N(4) is bonded in a 4-coordinate geometry to one Gd(1), one Gd(2), one Si(2), and one Si(4) atom. In the fourth N site, N(5) is bonded to one Gd(1), one Gd(2), one Si(3), and one Si(4) atom to form distorted NGd2Si2 trigonal pyramids that share  a cornercorner with one N(3)Gd2Si2 tetrahedra, corners with two equivalent C(1)Si4 tetrahedra, corners with two equivalent N(2)Gd2Si2 tetrahedra, corners with three equivalent N(6)Gd2Si2 tetrahedra, and  an edgeedge with one N(3)Gd2Si2 tetrahedra. In the fifth N site, N(6) is bonded to two equivalent Gd(2), one Si(1), and one Si(4) atom to form distorted NGd2Si2 tetrahedra that share  a cornercorner with one N(2)Gd2Si2 tetrahedra, corners with two equivalent C(1)Si4 tetrahedra, corners with three equivalent N(3)Gd2Si2 tetrahedra, corners with three equivalent N(5)Gd2Si2 trigonal pyramids, and  an edgeedge with one N(6)Gd2Si2 tetrahedra. In the sixth N site, N(1) is bonded in a distorted trigonal planar geometry to one Gd(2), one Si(2), and one Si(3) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Gd2Si4CN6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.014
_cell_length_b   6.000
_cell_length_c   12.016
_cell_angle_alpha   60.428
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   627.909
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Gd  Gd0  1  0.565  0.668  0.095  1.0
  Gd  Gd1  1  0.065  0.332  0.405  1.0
  Gd  Gd2  1  0.435  0.332  0.905  1.0
  Gd  Gd3  1  0.935  0.668  0.595  1.0
  Gd  Gd4  1  0.416  0.338  0.419  1.0
  Gd  Gd5  1  0.916  0.662  0.081  1.0
  Gd  Gd6  1  0.584  0.662  0.581  1.0
  Gd  Gd7  1  0.084  0.338  0.919  1.0
  Si  Si8  1  0.481  0.994  0.249  1.0
  Si  Si9  1  0.981  0.006  0.251  1.0
  Si  Si10  1  0.519  0.006  0.751  1.0
  Si  Si11  1  0.019  0.994  0.749  1.0
  Si  Si12  1  0.213  0.834  0.421  1.0
  Si  Si13  1  0.713  0.166  0.079  1.0
  Si  Si14  1  0.787  0.166  0.579  1.0
  Si  Si15  1  0.287  0.834  0.921  1.0
  Si  Si16  1  0.207  0.799  0.177  1.0
  Si  Si17  1  0.707  0.201  0.323  1.0
  Si  Si18  1  0.793  0.201  0.823  1.0
  Si  Si19  1  0.293  0.799  0.677  1.0
  Si  Si20  1  0.228  0.323  0.159  1.0
  Si  Si21  1  0.728  0.677  0.341  1.0
  Si  Si22  1  0.772  0.677  0.841  1.0
  Si  Si23  1  0.272  0.323  0.659  1.0
  C  C24  1  0.293  0.977  0.252  1.0
  C  C25  1  0.793  0.023  0.248  1.0
  C  C26  1  0.707  0.023  0.748  1.0
  C  C27  1  0.207  0.977  0.752  1.0
  N  N28  1  0.212  0.954  0.011  1.0
  N  N29  1  0.712  0.046  0.489  1.0
  N  N30  1  0.788  0.046  0.989  1.0
  N  N31  1  0.288  0.954  0.511  1.0
  N  N32  1  0.046  0.940  0.399  1.0
  N  N33  1  0.546  0.060  0.101  1.0
  N  N34  1  0.954  0.060  0.601  1.0
  N  N35  1  0.454  0.940  0.899  1.0
  N  N36  1  0.038  0.764  0.222  1.0
  N  N37  1  0.538  0.236  0.278  1.0
  N  N38  1  0.962  0.236  0.778  1.0
  N  N39  1  0.462  0.764  0.722  1.0
  N  N40  1  0.289  0.496  0.002  1.0
  N  N41  1  0.789  0.504  0.498  1.0
  N  N42  1  0.711  0.504  0.998  1.0
  N  N43  1  0.211  0.496  0.502  1.0
  N  N44  1  0.264  0.482  0.245  1.0
  N  N45  1  0.764  0.518  0.255  1.0
  N  N46  1  0.736  0.518  0.755  1.0
  N  N47  1  0.236  0.482  0.745  1.0
  N  N48  1  0.054  0.298  0.139  1.0
  N  N49  1  0.554  0.702  0.361  1.0
  N  N50  1  0.946  0.702  0.861  1.0
  N  N51  1  0.446  0.298  0.639  1.0
[/CIF]
.