The material structure described by Hf4ZnGa11 is Uranium Silicide-derived structured and crystallizes in the tetragonal P4mm space group. There are four inequivalent Hf sites. In the first Hf site, Hf(1) is bonded to four equivalent Ga(2), four equivalent Ga(3), and four equivalent Ga(6) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Hf(4)Ga12 cuboctahedra, corners with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with eight equivalent Ga(2)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Hf(4)Ga12 cuboctahedra,  a faceface with one Zn(1)Hf4Ga8 cuboctahedra, faces with four equivalent Hf(1)Ga12 cuboctahedra, faces with four equivalent Ga(2)Hf4Ga8 cuboctahedra, and faces with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra. In the second Hf site, Hf(2) is bonded to four equivalent Ga(1), four equivalent Ga(4), and four equivalent Ga(7) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(2)Ga12 cuboctahedra, corners with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with four equivalent Hf(4)Ga12 cuboctahedra, edges with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(4)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Hf(3)Zn4Ga8 cuboctahedra, faces with four equivalent Hf(2)Ga12 cuboctahedra, faces with four equivalent Ga(4)Hf4Ga8 cuboctahedra, and faces with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra. In the third Hf site, Hf(3) is bonded to four equivalent Zn(1), four equivalent Ga(1), and four equivalent Ga(3) atoms to form HfZn4Ga8 cuboctahedra that share corners with four equivalent Hf(2)Ga12 cuboctahedra, corners with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with eight equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, edges with eight equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Hf(2)Ga12 cuboctahedra, faces with four equivalent Hf(3)Zn4Ga8 cuboctahedra, faces with four equivalent Zn(1)Hf4Ga8 cuboctahedra, faces with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, and faces with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra. In the fourth Hf site, Hf(4) is bonded to four equivalent Ga(2), four equivalent Ga(4), and four equivalent Ga(5) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Hf(4)Ga12 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with eight equivalent Ga(2)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(4)Hf4Ga8 cuboctahedra,  a faceface with one Hf(1)Ga12 cuboctahedra, faces with four equivalent Hf(4)Ga12 cuboctahedra, faces with four equivalent Ga(2)Hf4Ga8 cuboctahedra, and faces with four equivalent Ga(4)Hf4Ga8 cuboctahedra. Zn(1) is bonded to four equivalent Hf(3), four equivalent Ga(1), and four equivalent Ga(3) atoms to form ZnHf4Ga8 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with eight equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, edges with eight equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Hf(1)Ga12 cuboctahedra, faces with four equivalent Hf(3)Zn4Ga8 cuboctahedra, faces with four equivalent Zn(1)Hf4Ga8 cuboctahedra, faces with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, and faces with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra. There are seven inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent Hf(2), two equivalent Hf(3), two equivalent Zn(1), two equivalent Ga(7), and four equivalent Ga(1) atoms to form distorted GaHf4Zn2Ga6 cuboctahedra that share corners with four equivalent Ga(4)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, corners with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(4)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Ga(4)Hf4Ga8 cuboctahedra,  a faceface with one Ga(3)Hf4Zn2Ga6 cuboctahedra, faces with two equivalent Hf(2)Ga12 cuboctahedra, faces with two equivalent Hf(3)Zn4Ga8 cuboctahedra, faces with two equivalent Zn(1)Hf4Ga8 cuboctahedra, and faces with eight equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra. In the second Ga site, Ga(2) is bonded to two equivalent Hf(1), two equivalent Hf(4), two equivalent Ga(5), two equivalent Ga(6), and four equivalent Ga(2) atoms to form distorted GaHf4Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(4)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with four equivalent Hf(4)Ga12 cuboctahedra, edges with four equivalent Ga(4)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Ga(4)Hf4Ga8 cuboctahedra,  a faceface with one Ga(3)Hf4Zn2Ga6 cuboctahedra, faces with two equivalent Hf(1)Ga12 cuboctahedra, faces with two equivalent Hf(4)Ga12 cuboctahedra, and faces with eight equivalent Ga(2)Hf4Ga8 cuboctahedra. In the third Ga site, Ga(3) is bonded to two equivalent Hf(1), two equivalent Hf(3), two equivalent Zn(1), two equivalent Ga(6), and four equivalent Ga(3) atoms to form GaHf4Zn2Ga6 cuboctahedra that share corners with four equivalent Ga(2)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, corners with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(2)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Ga(2)Hf4Ga8 cuboctahedra,  a faceface with one Ga(1)Hf4Zn2Ga6 cuboctahedra, faces with two equivalent Hf(1)Ga12 cuboctahedra, faces with two equivalent Hf(3)Zn4Ga8 cuboctahedra, faces with two equivalent Zn(1)Hf4Ga8 cuboctahedra, and faces with eight equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra. In the fourth Ga site, Ga(4) is bonded to two equivalent Hf(2), two equivalent Hf(4), two equivalent Ga(5), two equivalent Ga(7), and four equivalent Ga(4) atoms to form GaHf4Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(4)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Hf(4)Ga12 cuboctahedra, edges with four equivalent Ga(2)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Ga(2)Hf4Ga8 cuboctahedra,  a faceface with one Ga(1)Hf4Zn2Ga6 cuboctahedra, faces with two equivalent Hf(2)Ga12 cuboctahedra, faces with two equivalent Hf(4)Ga12 cuboctahedra, and faces with eight equivalent Ga(4)Hf4Ga8 cuboctahedra. In the fifth Ga site, Ga(5) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(4), four equivalent Ga(2), and four equivalent Ga(4) atoms. In the sixth Ga site, Ga(6) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(1), four equivalent Ga(2), and four equivalent Ga(3) atoms. In the seventh Ga site, Ga(7) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(2), four equivalent Ga(1), and four equivalent Ga(4) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Hf4ZnGa11
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.965
_cell_length_b   3.965
_cell_length_c   17.430
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   274.051
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Hf  Hf0  1  0.500  0.500  0.382  1.0
  Hf  Hf1  1  0.000  0.000  0.882  1.0
  Hf  Hf2  1  0.000  0.000  0.118  1.0
  Hf  Hf3  1  0.500  0.500  0.619  1.0
  Zn  Zn4  1  0.500  0.500  0.128  1.0
  Ga  Ga5  1  0.500  0.000  0.002  1.0
  Ga  Ga6  1  0.000  0.500  0.500  1.0
  Ga  Ga7  1  0.000  0.500  0.002  1.0
  Ga  Ga8  1  0.500  0.000  0.500  1.0
  Ga  Ga9  1  0.000  0.500  0.246  1.0
  Ga  Ga10  1  0.500  0.000  0.750  1.0
  Ga  Ga11  1  0.500  0.000  0.246  1.0
  Ga  Ga12  1  0.000  0.500  0.750  1.0
  Ga  Ga13  1  0.000  0.000  0.625  1.0
  Ga  Ga14  1  0.000  0.000  0.371  1.0
  Ga  Ga15  1  0.500  0.500  0.877  1.0
[/CIF]
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The material structure described by Hf4ZnGa11 is Uranium Silicide-derived structured and crystallizes in the tetragonal P4mm space group. There are four inequivalent Hf sites. In the first Hf site, Hf(1) is bonded to four equivalent Ga(2), four equivalent Ga(3), and four equivalent Ga(6) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Hf(4)Ga12 cuboctahedra, corners with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with eight equivalent Ga(2)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Hf(4)Ga12 cuboctahedra,  a faceface with one Zn(1)Hf4Ga8 cuboctahedra, faces with four equivalent Hf(1)Ga12 cuboctahedra, faces with four equivalent Ga(2)Hf4Ga8 cuboctahedra, and faces with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra. In the second Hf site, Hf(2) is bonded to four equivalent Ga(1), four equivalent Ga(4), and four equivalent Ga(7) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(2)Ga12 cuboctahedra, corners with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with four equivalent Hf(4)Ga12 cuboctahedra, edges with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(4)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Hf(3)Zn4Ga8 cuboctahedra, faces with four equivalent Hf(2)Ga12 cuboctahedra, faces with four equivalent Ga(4)Hf4Ga8 cuboctahedra, and faces with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra. In the third Hf site, Hf(3) is bonded to four equivalent Zn(1), four equivalent Ga(1), and four equivalent Ga(3) atoms to form HfZn4Ga8 cuboctahedra that share corners with four equivalent Hf(2)Ga12 cuboctahedra, corners with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with eight equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, edges with eight equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Hf(2)Ga12 cuboctahedra, faces with four equivalent Hf(3)Zn4Ga8 cuboctahedra, faces with four equivalent Zn(1)Hf4Ga8 cuboctahedra, faces with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, and faces with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra. In the fourth Hf site, Hf(4) is bonded to four equivalent Ga(2), four equivalent Ga(4), and four equivalent Ga(5) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Hf(4)Ga12 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with eight equivalent Ga(2)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(4)Hf4Ga8 cuboctahedra,  a faceface with one Hf(1)Ga12 cuboctahedra, faces with four equivalent Hf(4)Ga12 cuboctahedra, faces with four equivalent Ga(2)Hf4Ga8 cuboctahedra, and faces with four equivalent Ga(4)Hf4Ga8 cuboctahedra. Zn(1) is bonded to four equivalent Hf(3), four equivalent Ga(1), and four equivalent Ga(3) atoms to form ZnHf4Ga8 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with eight equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, edges with eight equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Hf(1)Ga12 cuboctahedra, faces with four equivalent Hf(3)Zn4Ga8 cuboctahedra, faces with four equivalent Zn(1)Hf4Ga8 cuboctahedra, faces with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, and faces with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra. There are seven inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent Hf(2), two equivalent Hf(3), two equivalent Zn(1), two equivalent Ga(7), and four equivalent Ga(1) atoms to form distorted GaHf4Zn2Ga6 cuboctahedra that share corners with four equivalent Ga(4)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, corners with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(4)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Ga(4)Hf4Ga8 cuboctahedra,  a faceface with one Ga(3)Hf4Zn2Ga6 cuboctahedra, faces with two equivalent Hf(2)Ga12 cuboctahedra, faces with two equivalent Hf(3)Zn4Ga8 cuboctahedra, faces with two equivalent Zn(1)Hf4Ga8 cuboctahedra, and faces with eight equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra. In the second Ga site, Ga(2) is bonded to two equivalent Hf(1), two equivalent Hf(4), two equivalent Ga(5), two equivalent Ga(6), and four equivalent Ga(2) atoms to form distorted GaHf4Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(4)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with four equivalent Hf(4)Ga12 cuboctahedra, edges with four equivalent Ga(4)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Ga(4)Hf4Ga8 cuboctahedra,  a faceface with one Ga(3)Hf4Zn2Ga6 cuboctahedra, faces with two equivalent Hf(1)Ga12 cuboctahedra, faces with two equivalent Hf(4)Ga12 cuboctahedra, and faces with eight equivalent Ga(2)Hf4Ga8 cuboctahedra. In the third Ga site, Ga(3) is bonded to two equivalent Hf(1), two equivalent Hf(3), two equivalent Zn(1), two equivalent Ga(6), and four equivalent Ga(3) atoms to form GaHf4Zn2Ga6 cuboctahedra that share corners with four equivalent Ga(2)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, corners with four equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with four equivalent Hf(3)Zn4Ga8 cuboctahedra, edges with four equivalent Zn(1)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(2)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Ga(2)Hf4Ga8 cuboctahedra,  a faceface with one Ga(1)Hf4Zn2Ga6 cuboctahedra, faces with two equivalent Hf(1)Ga12 cuboctahedra, faces with two equivalent Hf(3)Zn4Ga8 cuboctahedra, faces with two equivalent Zn(1)Hf4Ga8 cuboctahedra, and faces with eight equivalent Ga(3)Hf4Zn2Ga6 cuboctahedra. In the fourth Ga site, Ga(4) is bonded to two equivalent Hf(2), two equivalent Hf(4), two equivalent Ga(5), two equivalent Ga(7), and four equivalent Ga(4) atoms to form GaHf4Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(4)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Hf(4)Ga12 cuboctahedra, edges with four equivalent Ga(2)Hf4Ga8 cuboctahedra, edges with four equivalent Ga(1)Hf4Zn2Ga6 cuboctahedra,  a faceface with one Ga(2)Hf4Ga8 cuboctahedra,  a faceface with one Ga(1)Hf4Zn2Ga6 cuboctahedra, faces with two equivalent Hf(2)Ga12 cuboctahedra, faces with two equivalent Hf(4)Ga12 cuboctahedra, and faces with eight equivalent Ga(4)Hf4Ga8 cuboctahedra. In the fifth Ga site, Ga(5) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(4), four equivalent Ga(2), and four equivalent Ga(4) atoms. In the sixth Ga site, Ga(6) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(1), four equivalent Ga(2), and four equivalent Ga(3) atoms. In the seventh Ga site, Ga(7) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(2), four equivalent Ga(1), and four equivalent Ga(4) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Hf4ZnGa11
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.965
_cell_length_b   3.965
_cell_length_c   17.430
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   274.051
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Hf  Hf0  1  0.500  0.500  0.382  1.0
  Hf  Hf1  1  0.000  0.000  0.882  1.0
  Hf  Hf2  1  0.000  0.000  0.118  1.0
  Hf  Hf3  1  0.500  0.500  0.619  1.0
  Zn  Zn4  1  0.500  0.500  0.128  1.0
  Ga  Ga5  1  0.500  0.000  0.002  1.0
  Ga  Ga6  1  0.000  0.500  0.500  1.0
  Ga  Ga7  1  0.000  0.500  0.002  1.0
  Ga  Ga8  1  0.500  0.000  0.500  1.0
  Ga  Ga9  1  0.000  0.500  0.246  1.0
  Ga  Ga10  1  0.500  0.000  0.750  1.0
  Ga  Ga11  1  0.500  0.000  0.246  1.0
  Ga  Ga12  1  0.000  0.500  0.750  1.0
  Ga  Ga13  1  0.000  0.000  0.625  1.0
  Ga  Ga14  1  0.000  0.000  0.371  1.0
  Ga  Ga15  1  0.500  0.500  0.877  1.0
[/CIF]
.