The material described by Tb2Si3 crystallizes in the orthorhombic Imm2 space group. There are two inequivalent Tb sites. In the first Tb site, Tb(1) is bonded in a 10-coordinate geometry to two equivalent Si(2), four equivalent Si(1), and four equivalent Si(3) atoms. In the second Tb site, Tb(2) is bonded in a 8-coordinate geometry to two equivalent Si(1), two equivalent Si(3), and four equivalent Si(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to two equivalent Tb(2), four equivalent Tb(1), one Si(3), and two equivalent Si(2) atoms. In the second Si site, Si(2) is bonded in a 8-coordinate geometry to two equivalent Tb(1), four equivalent Tb(2), and two equivalent Si(1) atoms. In the third Si site, Si(3) is bonded in a 7-coordinate geometry to two equivalent Tb(2), four equivalent Tb(1), and one Si(1) atom. is represented by the CIF card [CIF]
data_Tb2Si3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.445
_cell_length_b   7.445
_cell_length_c   7.445
_cell_angle_alpha   149.921
_cell_angle_beta   148.492
_cell_angle_gamma   44.118
_symmetry_Int_Tables_number   1
_cell_volume   107.794
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Tb  Tb0  1  0.127  0.627  0.500  1.0
  Tb  Tb1  1  0.373  0.373  0.000  1.0
  Si  Si2  1  0.701  0.201  0.500  1.0
  Si  Si3  1  0.800  0.800  0.000  1.0
  Si  Si4  1  0.534  0.034  0.500  1.0
[/CIF]
.
The material described by Tb2Si3 crystallizes in the orthorhombic Imm2 space group. There are two inequivalent Tb sites. In the first Tb site, Tb(1) is bonded in a 10-coordinate geometry to two equivalent Si(2), four equivalent Si(1), and four equivalent Si(3) atoms. In the second Tb site, Tb(2) is bonded in a 8-coordinate geometry to two equivalent Si(1), two equivalent Si(3), and four equivalent Si(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to two equivalent Tb(2), four equivalent Tb(1), one Si(3), and two equivalent Si(2) atoms. In the second Si site, Si(2) is bonded in a 8-coordinate geometry to two equivalent Tb(1), four equivalent Tb(2), and two equivalent Si(1) atoms. In the third Si site, Si(3) is bonded in a 7-coordinate geometry to two equivalent Tb(2), four equivalent Tb(1), and one Si(1) atom. is represented by the CIF card [CIF]
data_Tb2Si3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.445
_cell_length_b   7.445
_cell_length_c   7.445
_cell_angle_alpha   149.921
_cell_angle_beta   148.492
_cell_angle_gamma   44.118
_symmetry_Int_Tables_number   1
_cell_volume   107.794
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Tb  Tb0  1  0.127  0.627  0.500  1.0
  Tb  Tb1  1  0.373  0.373  0.000  1.0
  Si  Si2  1  0.701  0.201  0.500  1.0
  Si  Si3  1  0.800  0.800  0.000  1.0
  Si  Si4  1  0.534  0.034  0.500  1.0
[/CIF]
.