The crystal structure described by ScHf3Ga12 is Uranium Silicide-derived structured and crystallizes in the tetragonal P4mm space group. Sc(1) is bonded to four equivalent Ga(2), four equivalent Ga(5), and four equivalent Ga(7) atoms to form ScGa12 cuboctahedra that share corners with four equivalent Sc(1)Ga12 cuboctahedra, corners with four equivalent Hf(3)Ga12 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with eight equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, edges with eight equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Hf(3)Ga12 cuboctahedra, faces with four equivalent Sc(1)Ga12 cuboctahedra, faces with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, and faces with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra. There are three inequivalent Hf sites. In the first Hf site, Hf(1) is bonded to four equivalent Ga(1), four equivalent Ga(6), and four equivalent Ga(8) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Hf(3)Ga12 cuboctahedra, edges with eight equivalent Ga(1)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(8)Hf4Ga8 cuboctahedra,  a faceface with one Hf(2)Ga12 cuboctahedra, faces with four equivalent Hf(1)Ga12 cuboctahedra, faces with four equivalent Ga(1)Hf4Ga8 cuboctahedra, and faces with four equivalent Ga(8)Hf4Ga8 cuboctahedra. In the second Hf site, Hf(2) is bonded to four equivalent Ga(1), four equivalent Ga(3), and four equivalent Ga(7) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Sc(1)Ga12 cuboctahedra, edges with eight equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, edges with eight equivalent Ga(1)Hf4Ga8 cuboctahedra,  a faceface with one Hf(1)Ga12 cuboctahedra, faces with four equivalent Hf(2)Ga12 cuboctahedra, faces with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, and faces with four equivalent Ga(1)Hf4Ga8 cuboctahedra. In the third Hf site, Hf(3) is bonded to four equivalent Ga(2), four equivalent Ga(4), and four equivalent Ga(8) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Sc(1)Ga12 cuboctahedra, corners with four equivalent Hf(3)Ga12 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with eight equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, edges with eight equivalent Ga(8)Hf4Ga8 cuboctahedra,  a faceface with one Sc(1)Ga12 cuboctahedra, faces with four equivalent Hf(3)Ga12 cuboctahedra, faces with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, and faces with four equivalent Ga(8)Hf4Ga8 cuboctahedra. There are eight inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent Hf(1), two equivalent Hf(2), two equivalent Ga(3), two equivalent Ga(6), and four equivalent Ga(1) atoms to form distorted GaHf4Ga8 cuboctahedra that share corners with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(8)Hf4Ga8 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, edges with four equivalent Ga(8)Hf4Ga8 cuboctahedra,  a faceface with one Ga(7)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Ga(8)Hf4Ga8 cuboctahedra, faces with two equivalent Hf(1)Ga12 cuboctahedra, faces with two equivalent Hf(2)Ga12 cuboctahedra, and faces with eight equivalent Ga(1)Hf4Ga8 cuboctahedra. In the second Ga site, Ga(2) is bonded to two equivalent Sc(1), two equivalent Hf(3), two equivalent Ga(4), two equivalent Ga(5), and four equivalent Ga(2) atoms to form distorted GaHf2Sc2Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(8)Hf4Ga8 cuboctahedra, edges with four equivalent Sc(1)Ga12 cuboctahedra, edges with four equivalent Hf(3)Ga12 cuboctahedra, edges with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, edges with four equivalent Ga(8)Hf4Ga8 cuboctahedra,  a faceface with one Ga(7)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Ga(8)Hf4Ga8 cuboctahedra, faces with two equivalent Sc(1)Ga12 cuboctahedra, faces with two equivalent Hf(3)Ga12 cuboctahedra, and faces with eight equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra. In the third Ga site, Ga(3) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(2), four equivalent Ga(1), and four equivalent Ga(7) atoms. In the fourth Ga site, Ga(4) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(3), four equivalent Ga(2), and four equivalent Ga(8) atoms. In the fifth Ga site, Ga(5) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Sc(1), four equivalent Ga(2), and four equivalent Ga(7) atoms. In the sixth Ga site, Ga(6) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(1), four equivalent Ga(1), and four equivalent Ga(8) atoms. In the seventh Ga site, Ga(7) is bonded to two equivalent Sc(1), two equivalent Hf(2), two equivalent Ga(3), two equivalent Ga(5), and four equivalent Ga(7) atoms to form GaHf2Sc2Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Ga8 cuboctahedra, edges with four equivalent Sc(1)Ga12 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, edges with four equivalent Ga(1)Hf4Ga8 cuboctahedra,  a faceface with one Ga(2)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Ga(1)Hf4Ga8 cuboctahedra, faces with two equivalent Sc(1)Ga12 cuboctahedra, faces with two equivalent Hf(2)Ga12 cuboctahedra, and faces with eight equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra. In the eighth Ga site, Ga(8) is bonded to two equivalent Hf(1), two equivalent Hf(3), two equivalent Ga(4), two equivalent Ga(6), and four equivalent Ga(8) atoms to form distorted GaHf4Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(8)Hf4Ga8 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with four equivalent Hf(3)Ga12 cuboctahedra, edges with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, edges with four equivalent Ga(1)Hf4Ga8 cuboctahedra,  a faceface with one Ga(2)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Ga(1)Hf4Ga8 cuboctahedra, faces with two equivalent Hf(1)Ga12 cuboctahedra, faces with two equivalent Hf(3)Ga12 cuboctahedra, and faces with eight equivalent Ga(8)Hf4Ga8 cuboctahedra. is represented by the CIF card [CIF]
data_Hf3ScGa12
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.978
_cell_length_b   3.978
_cell_length_c   17.607
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   278.623
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Hf  Hf0  1  0.000  0.000  0.881  1.0
  Hf  Hf1  1  0.000  0.000  0.118  1.0
  Hf  Hf2  1  0.500  0.500  0.620  1.0
  Sc  Sc3  1  0.500  0.500  0.381  1.0
  Ga  Ga4  1  0.500  0.000  0.000  1.0
  Ga  Ga5  1  0.000  0.500  0.500  1.0
  Ga  Ga6  1  0.500  0.000  0.500  1.0
  Ga  Ga7  1  0.000  0.500  0.000  1.0
  Ga  Ga8  1  0.500  0.500  0.127  1.0
  Ga  Ga9  1  0.000  0.000  0.623  1.0
  Ga  Ga10  1  0.000  0.000  0.376  1.0
  Ga  Ga11  1  0.500  0.500  0.875  1.0
  Ga  Ga12  1  0.000  0.500  0.250  1.0
  Ga  Ga13  1  0.500  0.000  0.750  1.0
  Ga  Ga14  1  0.500  0.000  0.250  1.0
  Ga  Ga15  1  0.000  0.500  0.750  1.0
[/CIF]
.
The crystal structure described by ScHf3Ga12 is Uranium Silicide-derived structured and crystallizes in the tetragonal P4mm space group. Sc(1) is bonded to four equivalent Ga(2), four equivalent Ga(5), and four equivalent Ga(7) atoms to form ScGa12 cuboctahedra that share corners with four equivalent Sc(1)Ga12 cuboctahedra, corners with four equivalent Hf(3)Ga12 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with eight equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, edges with eight equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Hf(3)Ga12 cuboctahedra, faces with four equivalent Sc(1)Ga12 cuboctahedra, faces with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, and faces with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra. There are three inequivalent Hf sites. In the first Hf site, Hf(1) is bonded to four equivalent Ga(1), four equivalent Ga(6), and four equivalent Ga(8) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Hf(3)Ga12 cuboctahedra, edges with eight equivalent Ga(1)Hf4Ga8 cuboctahedra, edges with eight equivalent Ga(8)Hf4Ga8 cuboctahedra,  a faceface with one Hf(2)Ga12 cuboctahedra, faces with four equivalent Hf(1)Ga12 cuboctahedra, faces with four equivalent Ga(1)Hf4Ga8 cuboctahedra, and faces with four equivalent Ga(8)Hf4Ga8 cuboctahedra. In the second Hf site, Hf(2) is bonded to four equivalent Ga(1), four equivalent Ga(3), and four equivalent Ga(7) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Hf(1)Ga12 cuboctahedra, corners with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Sc(1)Ga12 cuboctahedra, edges with eight equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, edges with eight equivalent Ga(1)Hf4Ga8 cuboctahedra,  a faceface with one Hf(1)Ga12 cuboctahedra, faces with four equivalent Hf(2)Ga12 cuboctahedra, faces with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, and faces with four equivalent Ga(1)Hf4Ga8 cuboctahedra. In the third Hf site, Hf(3) is bonded to four equivalent Ga(2), four equivalent Ga(4), and four equivalent Ga(8) atoms to form HfGa12 cuboctahedra that share corners with four equivalent Sc(1)Ga12 cuboctahedra, corners with four equivalent Hf(3)Ga12 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with eight equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, edges with eight equivalent Ga(8)Hf4Ga8 cuboctahedra,  a faceface with one Sc(1)Ga12 cuboctahedra, faces with four equivalent Hf(3)Ga12 cuboctahedra, faces with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, and faces with four equivalent Ga(8)Hf4Ga8 cuboctahedra. There are eight inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent Hf(1), two equivalent Hf(2), two equivalent Ga(3), two equivalent Ga(6), and four equivalent Ga(1) atoms to form distorted GaHf4Ga8 cuboctahedra that share corners with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(8)Hf4Ga8 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, edges with four equivalent Ga(8)Hf4Ga8 cuboctahedra,  a faceface with one Ga(7)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Ga(8)Hf4Ga8 cuboctahedra, faces with two equivalent Hf(1)Ga12 cuboctahedra, faces with two equivalent Hf(2)Ga12 cuboctahedra, and faces with eight equivalent Ga(1)Hf4Ga8 cuboctahedra. In the second Ga site, Ga(2) is bonded to two equivalent Sc(1), two equivalent Hf(3), two equivalent Ga(4), two equivalent Ga(5), and four equivalent Ga(2) atoms to form distorted GaHf2Sc2Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(8)Hf4Ga8 cuboctahedra, edges with four equivalent Sc(1)Ga12 cuboctahedra, edges with four equivalent Hf(3)Ga12 cuboctahedra, edges with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, edges with four equivalent Ga(8)Hf4Ga8 cuboctahedra,  a faceface with one Ga(7)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Ga(8)Hf4Ga8 cuboctahedra, faces with two equivalent Sc(1)Ga12 cuboctahedra, faces with two equivalent Hf(3)Ga12 cuboctahedra, and faces with eight equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra. In the third Ga site, Ga(3) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(2), four equivalent Ga(1), and four equivalent Ga(7) atoms. In the fourth Ga site, Ga(4) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(3), four equivalent Ga(2), and four equivalent Ga(8) atoms. In the fifth Ga site, Ga(5) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Sc(1), four equivalent Ga(2), and four equivalent Ga(7) atoms. In the sixth Ga site, Ga(6) is bonded in a distorted rectangular see-saw-like geometry to four equivalent Hf(1), four equivalent Ga(1), and four equivalent Ga(8) atoms. In the seventh Ga site, Ga(7) is bonded to two equivalent Sc(1), two equivalent Hf(2), two equivalent Ga(3), two equivalent Ga(5), and four equivalent Ga(7) atoms to form GaHf2Sc2Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Ga8 cuboctahedra, edges with four equivalent Sc(1)Ga12 cuboctahedra, edges with four equivalent Hf(2)Ga12 cuboctahedra, edges with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, edges with four equivalent Ga(1)Hf4Ga8 cuboctahedra,  a faceface with one Ga(2)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Ga(1)Hf4Ga8 cuboctahedra, faces with two equivalent Sc(1)Ga12 cuboctahedra, faces with two equivalent Hf(2)Ga12 cuboctahedra, and faces with eight equivalent Ga(7)Hf2Sc2Ga8 cuboctahedra. In the eighth Ga site, Ga(8) is bonded to two equivalent Hf(1), two equivalent Hf(3), two equivalent Ga(4), two equivalent Ga(6), and four equivalent Ga(8) atoms to form distorted GaHf4Ga8 cuboctahedra that share corners with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, corners with four equivalent Ga(1)Hf4Ga8 cuboctahedra, corners with four equivalent Ga(8)Hf4Ga8 cuboctahedra, edges with four equivalent Hf(1)Ga12 cuboctahedra, edges with four equivalent Hf(3)Ga12 cuboctahedra, edges with four equivalent Ga(2)Hf2Sc2Ga8 cuboctahedra, edges with four equivalent Ga(1)Hf4Ga8 cuboctahedra,  a faceface with one Ga(2)Hf2Sc2Ga8 cuboctahedra,  a faceface with one Ga(1)Hf4Ga8 cuboctahedra, faces with two equivalent Hf(1)Ga12 cuboctahedra, faces with two equivalent Hf(3)Ga12 cuboctahedra, and faces with eight equivalent Ga(8)Hf4Ga8 cuboctahedra. is represented by the CIF card [CIF]
data_Hf3ScGa12
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.978
_cell_length_b   3.978
_cell_length_c   17.607
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   278.623
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Hf  Hf0  1  0.000  0.000  0.881  1.0
  Hf  Hf1  1  0.000  0.000  0.118  1.0
  Hf  Hf2  1  0.500  0.500  0.620  1.0
  Sc  Sc3  1  0.500  0.500  0.381  1.0
  Ga  Ga4  1  0.500  0.000  0.000  1.0
  Ga  Ga5  1  0.000  0.500  0.500  1.0
  Ga  Ga6  1  0.500  0.000  0.500  1.0
  Ga  Ga7  1  0.000  0.500  0.000  1.0
  Ga  Ga8  1  0.500  0.500  0.127  1.0
  Ga  Ga9  1  0.000  0.000  0.623  1.0
  Ga  Ga10  1  0.000  0.000  0.376  1.0
  Ga  Ga11  1  0.500  0.500  0.875  1.0
  Ga  Ga12  1  0.000  0.500  0.250  1.0
  Ga  Ga13  1  0.500  0.000  0.750  1.0
  Ga  Ga14  1  0.500  0.000  0.250  1.0
  Ga  Ga15  1  0.000  0.500  0.750  1.0
[/CIF]
.