The crystal structure described by In2SbAs is Enargite-like structured and crystallizes in the trigonal R3m space group. There are two inequivalent In sites. In the first In site, In(1) is bonded to three equivalent Sb(1) and one As(1) atom to form InSb3As tetrahedra that share corners with six equivalent In(1)Sb3As tetrahedra and corners with six equivalent In(2)SbAs3 tetrahedra. In the second In site, In(2) is bonded to one Sb(1) and three equivalent As(1) atoms to form InSbAs3 tetrahedra that share corners with six equivalent In(1)Sb3As tetrahedra and corners with six equivalent In(2)SbAs3 tetrahedra. Sb(1) is bonded to one In(2) and three equivalent In(1) atoms to form SbIn4 tetrahedra that share corners with six equivalent Sb(1)In4 tetrahedra and corners with six equivalent As(1)In4 tetrahedra. As(1) is bonded to one In(1) and three equivalent In(2) atoms to form AsIn4 tetrahedra that share corners with six equivalent Sb(1)In4 tetrahedra and corners with six equivalent As(1)In4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_In2SbAs
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.852
_cell_length_b   7.852
_cell_length_c   7.852
_cell_angle_alpha   33.607
_cell_angle_beta   33.607
_cell_angle_gamma   33.607
_symmetry_Int_Tables_number   1
_cell_volume   132.096
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.005  0.005  0.005  1.0
  In  In1  1  0.495  0.495  0.495  1.0
  Sb  Sb2  1  0.625  0.625  0.625  1.0
  As  As3  1  0.125  0.125  0.125  1.0
[/CIF]
.
The crystal structure described by In2SbAs is Enargite-like structured and crystallizes in the trigonal R3m space group. There are two inequivalent In sites. In the first In site, In(1) is bonded to three equivalent Sb(1) and one As(1) atom to form InSb3As tetrahedra that share corners with six equivalent In(1)Sb3As tetrahedra and corners with six equivalent In(2)SbAs3 tetrahedra. In the second In site, In(2) is bonded to one Sb(1) and three equivalent As(1) atoms to form InSbAs3 tetrahedra that share corners with six equivalent In(1)Sb3As tetrahedra and corners with six equivalent In(2)SbAs3 tetrahedra. Sb(1) is bonded to one In(2) and three equivalent In(1) atoms to form SbIn4 tetrahedra that share corners with six equivalent Sb(1)In4 tetrahedra and corners with six equivalent As(1)In4 tetrahedra. As(1) is bonded to one In(1) and three equivalent In(2) atoms to form AsIn4 tetrahedra that share corners with six equivalent Sb(1)In4 tetrahedra and corners with six equivalent As(1)In4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_In2SbAs
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.852
_cell_length_b   7.852
_cell_length_c   7.852
_cell_angle_alpha   33.607
_cell_angle_beta   33.607
_cell_angle_gamma   33.607
_symmetry_Int_Tables_number   1
_cell_volume   132.096
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.005  0.005  0.005  1.0
  In  In1  1  0.495  0.495  0.495  1.0
  Sb  Sb2  1  0.625  0.625  0.625  1.0
  As  As3  1  0.125  0.125  0.125  1.0
[/CIF]
.