The compound described by Si8C3 is Indium-like structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of four Si8C3 clusters. In two of the Si8C3 clusters, there are eight inequivalent Si sites. In the first Si site, Si(1) is bonded in a single-bond geometry to one C(1) atom. In the second Si site, Si(2) is bonded in a distorted L-shaped geometry to one C(1) and one C(2) atom. In the third Si site, Si(3) is bonded in an L-shaped geometry to one C(2) and one C(3) atom. In the fourth Si site, Si(4) is bonded in a single-bond geometry to one C(3) atom. In the fifth Si site, Si(5) is bonded in a single-bond geometry to one C(3) atom. In the sixth Si site, Si(6) is bonded in an L-shaped geometry to one C(2) and one C(3) atom. In the seventh Si site, Si(7) is bonded in an L-shaped geometry to one C(1) and one C(2) atom. In the eighth Si site, Si(8) is bonded in a single-bond geometry to one C(1) atom. There are three inequivalent C sites. In the first C site, C(1) is bonded in a rectangular see-saw-like geometry to one Si(1), one Si(2), one Si(7), and one Si(8) atom. In the second C site, C(2) is bonded in a rectangular see-saw-like geometry to one Si(2), one Si(3), one Si(6), and one Si(7) atom. In the third C site, C(3) is bonded in a rectangular see-saw-like geometry to one Si(3), one Si(4), one Si(5), and one Si(6) atom. In two of the Si8C3 clusters, there are eight inequivalent Si sites. In the first Si site, Si(9) is bonded in a single-bond geometry to one C(4) atom. In the second Si site, Si(10) is bonded in an L-shaped geometry to one C(4) and one C(5) atom. In the third Si site, Si(11) is bonded in an L-shaped geometry to one C(5) and one C(6) atom. In the fourth Si site, Si(12) is bonded in a single-bond geometry to one C(6) atom. In the fifth Si site, Si(13) is bonded in a single-bond geometry to one C(6) atom. In the sixth Si site, Si(14) is bonded in a distorted L-shaped geometry to one C(5) and one C(6) atom. In the seventh Si site, Si(15) is bonded in a distorted L-shaped geometry to one C(4) and one C(5) atom. In the eighth Si site, Si(16) is bonded in a single-bond geometry to one C(4) atom. There are three inequivalent C sites. In the first C site, C(4) is bonded in a distorted tetrahedral geometry to one Si(10), one Si(15), one Si(16), and one Si(9) atom. In the second C site, C(5) is bonded in a distorted rectangular see-saw-like geometry to one Si(10), one Si(11), one Si(14), and one Si(15) atom. In the third C site, C(6) is bonded in a tetrahedral geometry to one Si(11), one Si(12), one Si(13), and one Si(14) atom. is represented by the CIF file [CIF]
data_Si8C3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.942
_cell_length_b   12.202
_cell_length_c   12.300
_cell_angle_alpha   60.964
_cell_angle_beta   79.623
_cell_angle_gamma   89.592
_symmetry_Int_Tables_number   1
_cell_volume   635.143
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.819  0.689  0.970  1.0
  Si  Si1  1  0.181  0.311  0.030  1.0
  Si  Si2  1  0.499  0.604  0.910  1.0
  Si  Si3  1  0.501  0.396  0.090  1.0
  Si  Si4  1  0.532  0.400  0.824  1.0
  Si  Si5  1  0.468  0.600  0.176  1.0
  Si  Si6  1  0.139  0.438  0.674  1.0
  Si  Si7  1  0.861  0.562  0.326  1.0
  Si  Si8  1  0.719  0.387  0.541  1.0
  Si  Si9  1  0.281  0.613  0.459  1.0
  Si  Si10  1  0.776  0.612  0.607  1.0
  Si  Si11  1  0.224  0.388  0.393  1.0
  Si  Si12  1  0.184  0.592  0.760  1.0
  Si  Si13  1  0.816  0.408  0.240  1.0
  Si  Si14  1  0.240  0.831  0.736  1.0
  Si  Si15  1  0.760  0.169  0.264  1.0
  Si  Si16  1  0.212  0.098  0.080  1.0
  Si  Si17  1  0.788  0.902  0.920  1.0
  Si  Si18  1  0.364  0.003  0.863  1.0
  Si  Si19  1  0.636  0.997  0.137  1.0
  Si  Si20  1  0.008  0.021  0.665  1.0
  Si  Si21  1  0.992  0.979  0.335  1.0
  Si  Si22  1  0.357  0.058  0.409  1.0
  Si  Si23  1  0.643  0.942  0.591  1.0
  Si  Si24  1  0.844  0.210  0.428  1.0
  Si  Si25  1  0.156  0.790  0.572  1.0
  Si  Si26  1  0.424  0.221  0.547  1.0
  Si  Si27  1  0.576  0.779  0.453  1.0
  Si  Si28  1  0.151  0.215  0.795  1.0
  Si  Si29  1  0.849  0.785  0.205  1.0
  Si  Si30  1  0.711  0.195  0.926  1.0
  Si  Si31  1  0.289  0.805  0.074  1.0
  C  C32  1  0.146  0.662  0.879  1.0
  C  C33  1  0.854  0.338  0.121  1.0
  C  C34  1  0.575  0.576  0.770  1.0
  C  C35  1  0.425  0.424  0.230  1.0
  C  C36  1  0.756  0.437  0.659  1.0
  C  C37  1  0.244  0.563  0.341  1.0
  C  C38  1  0.377  0.128  0.913  1.0
  C  C39  1  0.623  0.872  0.087  1.0
  C  C40  1  0.226  0.114  0.715  1.0
  C  C41  1  0.774  0.886  0.285  1.0
  C  C42  1  0.158  0.139  0.488  1.0
  C  C43  1  0.842  0.861  0.512  1.0
[/CIF]
.
The compound described by Si8C3 is Indium-like structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of four Si8C3 clusters. In two of the Si8C3 clusters, there are eight inequivalent Si sites. In the first Si site, Si(1) is bonded in a single-bond geometry to one C(1) atom. In the second Si site, Si(2) is bonded in a distorted L-shaped geometry to one C(1) and one C(2) atom. In the third Si site, Si(3) is bonded in an L-shaped geometry to one C(2) and one C(3) atom. In the fourth Si site, Si(4) is bonded in a single-bond geometry to one C(3) atom. In the fifth Si site, Si(5) is bonded in a single-bond geometry to one C(3) atom. In the sixth Si site, Si(6) is bonded in an L-shaped geometry to one C(2) and one C(3) atom. In the seventh Si site, Si(7) is bonded in an L-shaped geometry to one C(1) and one C(2) atom. In the eighth Si site, Si(8) is bonded in a single-bond geometry to one C(1) atom. There are three inequivalent C sites. In the first C site, C(1) is bonded in a rectangular see-saw-like geometry to one Si(1), one Si(2), one Si(7), and one Si(8) atom. In the second C site, C(2) is bonded in a rectangular see-saw-like geometry to one Si(2), one Si(3), one Si(6), and one Si(7) atom. In the third C site, C(3) is bonded in a rectangular see-saw-like geometry to one Si(3), one Si(4), one Si(5), and one Si(6) atom. In two of the Si8C3 clusters, there are eight inequivalent Si sites. In the first Si site, Si(9) is bonded in a single-bond geometry to one C(4) atom. In the second Si site, Si(10) is bonded in an L-shaped geometry to one C(4) and one C(5) atom. In the third Si site, Si(11) is bonded in an L-shaped geometry to one C(5) and one C(6) atom. In the fourth Si site, Si(12) is bonded in a single-bond geometry to one C(6) atom. In the fifth Si site, Si(13) is bonded in a single-bond geometry to one C(6) atom. In the sixth Si site, Si(14) is bonded in a distorted L-shaped geometry to one C(5) and one C(6) atom. In the seventh Si site, Si(15) is bonded in a distorted L-shaped geometry to one C(4) and one C(5) atom. In the eighth Si site, Si(16) is bonded in a single-bond geometry to one C(4) atom. There are three inequivalent C sites. In the first C site, C(4) is bonded in a distorted tetrahedral geometry to one Si(10), one Si(15), one Si(16), and one Si(9) atom. In the second C site, C(5) is bonded in a distorted rectangular see-saw-like geometry to one Si(10), one Si(11), one Si(14), and one Si(15) atom. In the third C site, C(6) is bonded in a tetrahedral geometry to one Si(11), one Si(12), one Si(13), and one Si(14) atom. is represented by the CIF file [CIF]
data_Si8C3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.942
_cell_length_b   12.202
_cell_length_c   12.300
_cell_angle_alpha   60.964
_cell_angle_beta   79.623
_cell_angle_gamma   89.592
_symmetry_Int_Tables_number   1
_cell_volume   635.143
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.819  0.689  0.970  1.0
  Si  Si1  1  0.181  0.311  0.030  1.0
  Si  Si2  1  0.499  0.604  0.910  1.0
  Si  Si3  1  0.501  0.396  0.090  1.0
  Si  Si4  1  0.532  0.400  0.824  1.0
  Si  Si5  1  0.468  0.600  0.176  1.0
  Si  Si6  1  0.139  0.438  0.674  1.0
  Si  Si7  1  0.861  0.562  0.326  1.0
  Si  Si8  1  0.719  0.387  0.541  1.0
  Si  Si9  1  0.281  0.613  0.459  1.0
  Si  Si10  1  0.776  0.612  0.607  1.0
  Si  Si11  1  0.224  0.388  0.393  1.0
  Si  Si12  1  0.184  0.592  0.760  1.0
  Si  Si13  1  0.816  0.408  0.240  1.0
  Si  Si14  1  0.240  0.831  0.736  1.0
  Si  Si15  1  0.760  0.169  0.264  1.0
  Si  Si16  1  0.212  0.098  0.080  1.0
  Si  Si17  1  0.788  0.902  0.920  1.0
  Si  Si18  1  0.364  0.003  0.863  1.0
  Si  Si19  1  0.636  0.997  0.137  1.0
  Si  Si20  1  0.008  0.021  0.665  1.0
  Si  Si21  1  0.992  0.979  0.335  1.0
  Si  Si22  1  0.357  0.058  0.409  1.0
  Si  Si23  1  0.643  0.942  0.591  1.0
  Si  Si24  1  0.844  0.210  0.428  1.0
  Si  Si25  1  0.156  0.790  0.572  1.0
  Si  Si26  1  0.424  0.221  0.547  1.0
  Si  Si27  1  0.576  0.779  0.453  1.0
  Si  Si28  1  0.151  0.215  0.795  1.0
  Si  Si29  1  0.849  0.785  0.205  1.0
  Si  Si30  1  0.711  0.195  0.926  1.0
  Si  Si31  1  0.289  0.805  0.074  1.0
  C  C32  1  0.146  0.662  0.879  1.0
  C  C33  1  0.854  0.338  0.121  1.0
  C  C34  1  0.575  0.576  0.770  1.0
  C  C35  1  0.425  0.424  0.230  1.0
  C  C36  1  0.756  0.437  0.659  1.0
  C  C37  1  0.244  0.563  0.341  1.0
  C  C38  1  0.377  0.128  0.913  1.0
  C  C39  1  0.623  0.872  0.087  1.0
  C  C40  1  0.226  0.114  0.715  1.0
  C  C41  1  0.774  0.886  0.285  1.0
  C  C42  1  0.158  0.139  0.488  1.0
  C  C43  1  0.842  0.861  0.512  1.0
[/CIF]
.