The material described by BaGa2O4 crystallizes in the triclinic P1 space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 6-coordinate geometry to one O(1), one O(2), one O(7), one O(8), and two equivalent O(3) atoms. In the second Ba site, Ba(2) is bonded in a 6-coordinate geometry to one O(1), one O(2), one O(4), one O(6), and two equivalent O(5) atoms. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(2), one O(3), one O(6), and one O(7) atom to form corner-sharing GaO4 tetrahedra. In the second Ga site, Ga(2) is bonded in a rectangular see-saw-like geometry to one O(4), one O(5), one O(6), and one O(7) atom. In the third Ga site, Ga(3) is bonded in a rectangular see-saw-like geometry to one O(4), one O(5), one O(6), and one O(8) atom. In the fourth Ga site, Ga(4) is bonded to one O(1), one O(3), one O(4), and one O(8) atom to form corner-sharing GaO4 tetrahedra. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one Ba(1), one Ba(2), and one Ga(4) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Ba(1), one Ba(2), and one Ga(1) atom. In the third O site, O(3) is bonded in a distorted bent 120 degrees geometry to two equivalent Ba(1), one Ga(1), and one Ga(4) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Ba(2), one Ga(2), one Ga(3), and one Ga(4) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to two equivalent Ba(2), one Ga(2), and one Ga(3) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one Ba(2), one Ga(1), one Ga(2), and one Ga(3) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to one Ba(1), one Ga(1), and one Ga(2) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Ba(1), one Ga(3), and one Ga(4) atom. is represented by the CIF file [CIF]
data_Ba(GaO2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.735
_cell_length_b   6.749
_cell_length_c   8.334
_cell_angle_alpha   82.527
_cell_angle_beta   97.056
_cell_angle_gamma   48.277
_symmetry_Int_Tables_number   1
_cell_volume   268.849
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.977  0.985  0.750  1.0
  Ba  Ba1  1  0.034  0.036  0.251  1.0
  Ga  Ga2  1  0.285  0.256  0.557  1.0
  Ga  Ga3  1  0.696  0.834  0.374  1.0
  Ga  Ga4  1  0.836  0.696  0.126  1.0
  Ga  Ga5  1  0.257  0.284  0.943  1.0
  O  O6  1  0.095  0.155  0.966  1.0
  O  O7  1  0.155  0.095  0.534  1.0
  O  O8  1  0.344  0.342  0.750  1.0
  O  O9  1  0.595  0.075  0.133  1.0
  O  O10  1  0.647  0.646  0.250  1.0
  O  O11  1  0.076  0.594  0.366  1.0
  O  O12  1  0.644  0.008  0.528  1.0
  O  O13  1  0.009  0.643  0.972  1.0
[/CIF]
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The material described by BaGa2O4 crystallizes in the triclinic P1 space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 6-coordinate geometry to one O(1), one O(2), one O(7), one O(8), and two equivalent O(3) atoms. In the second Ba site, Ba(2) is bonded in a 6-coordinate geometry to one O(1), one O(2), one O(4), one O(6), and two equivalent O(5) atoms. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(2), one O(3), one O(6), and one O(7) atom to form corner-sharing GaO4 tetrahedra. In the second Ga site, Ga(2) is bonded in a rectangular see-saw-like geometry to one O(4), one O(5), one O(6), and one O(7) atom. In the third Ga site, Ga(3) is bonded in a rectangular see-saw-like geometry to one O(4), one O(5), one O(6), and one O(8) atom. In the fourth Ga site, Ga(4) is bonded to one O(1), one O(3), one O(4), and one O(8) atom to form corner-sharing GaO4 tetrahedra. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one Ba(1), one Ba(2), and one Ga(4) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Ba(1), one Ba(2), and one Ga(1) atom. In the third O site, O(3) is bonded in a distorted bent 120 degrees geometry to two equivalent Ba(1), one Ga(1), and one Ga(4) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Ba(2), one Ga(2), one Ga(3), and one Ga(4) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to two equivalent Ba(2), one Ga(2), and one Ga(3) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one Ba(2), one Ga(1), one Ga(2), and one Ga(3) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to one Ba(1), one Ga(1), and one Ga(2) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Ba(1), one Ga(3), and one Ga(4) atom. is represented by the CIF file [CIF]
data_Ba(GaO2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.735
_cell_length_b   6.749
_cell_length_c   8.334
_cell_angle_alpha   82.527
_cell_angle_beta   97.056
_cell_angle_gamma   48.277
_symmetry_Int_Tables_number   1
_cell_volume   268.849
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.977  0.985  0.750  1.0
  Ba  Ba1  1  0.034  0.036  0.251  1.0
  Ga  Ga2  1  0.285  0.256  0.557  1.0
  Ga  Ga3  1  0.696  0.834  0.374  1.0
  Ga  Ga4  1  0.836  0.696  0.126  1.0
  Ga  Ga5  1  0.257  0.284  0.943  1.0
  O  O6  1  0.095  0.155  0.966  1.0
  O  O7  1  0.155  0.095  0.534  1.0
  O  O8  1  0.344  0.342  0.750  1.0
  O  O9  1  0.595  0.075  0.133  1.0
  O  O10  1  0.647  0.646  0.250  1.0
  O  O11  1  0.076  0.594  0.366  1.0
  O  O12  1  0.644  0.008  0.528  1.0
  O  O13  1  0.009  0.643  0.972  1.0
[/CIF]
.