The structure described by CsHoSiS4 crystallizes in the orthorhombic P2_12_12_1 space group. Cs(1) is bonded in a 8-coordinate geometry to one S(2), two equivalent S(3), two equivalent S(4), and three equivalent S(1) atoms. Ho(1) is bonded in a 7-coordinate geometry to one S(1), two equivalent S(2), two equivalent S(3), and two equivalent S(4) atoms. Si(1) is bonded in a tetrahedral geometry to one S(1), one S(2), one S(3), and one S(4) atom. There are four inequivalent S sites. In the first S site, S(1) is bonded in a 5-coordinate geometry to three equivalent Cs(1), one Ho(1), and one Si(1) atom. In the second S site, S(2) is bonded in a distorted see-saw-like geometry to one Cs(1), two equivalent Ho(1), and one Si(1) atom. In the third S site, S(3) is bonded in a 5-coordinate geometry to two equivalent Cs(1), two equivalent Ho(1), and one Si(1) atom. In the fourth S site, S(4) is bonded in a 3-coordinate geometry to two equivalent Cs(1), two equivalent Ho(1), and one Si(1) atom. is represented by the CIF card [CIF]
data_CsHoSiS4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.373
_cell_length_b   6.725
_cell_length_c   17.811
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   763.299
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.503  0.492  0.968  1.0
  Cs  Cs1  1  0.997  0.508  0.468  1.0
  Cs  Cs2  1  0.003  0.008  0.032  1.0
  Cs  Cs3  1  0.497  0.992  0.532  1.0
  Ho  Ho4  1  0.292  0.481  0.228  1.0
  Ho  Ho5  1  0.208  0.519  0.728  1.0
  Ho  Ho6  1  0.792  0.019  0.772  1.0
  Ho  Ho7  1  0.708  0.981  0.272  1.0
  Si  Si8  1  0.790  0.518  0.167  1.0
  Si  Si9  1  0.710  0.482  0.667  1.0
  Si  Si10  1  0.290  0.982  0.833  1.0
  Si  Si11  1  0.210  0.018  0.333  1.0
  S  S12  1  0.055  0.513  0.096  1.0
  S  S13  1  0.445  0.487  0.596  1.0
  S  S14  1  0.555  0.987  0.904  1.0
  S  S15  1  0.945  0.013  0.404  1.0
  S  S16  1  0.607  0.427  0.780  1.0
  S  S17  1  0.893  0.573  0.280  1.0
  S  S18  1  0.107  0.073  0.220  1.0
  S  S19  1  0.393  0.927  0.720  1.0
  S  S20  1  0.567  0.751  0.147  1.0
  S  S21  1  0.933  0.249  0.647  1.0
  S  S22  1  0.067  0.749  0.853  1.0
  S  S23  1  0.433  0.251  0.353  1.0
  S  S24  1  0.602  0.254  0.156  1.0
  S  S25  1  0.898  0.746  0.656  1.0
  S  S26  1  0.102  0.246  0.844  1.0
  S  S27  1  0.398  0.754  0.344  1.0
[/CIF]
.
The structure described by CsHoSiS4 crystallizes in the orthorhombic P2_12_12_1 space group. Cs(1) is bonded in a 8-coordinate geometry to one S(2), two equivalent S(3), two equivalent S(4), and three equivalent S(1) atoms. Ho(1) is bonded in a 7-coordinate geometry to one S(1), two equivalent S(2), two equivalent S(3), and two equivalent S(4) atoms. Si(1) is bonded in a tetrahedral geometry to one S(1), one S(2), one S(3), and one S(4) atom. There are four inequivalent S sites. In the first S site, S(1) is bonded in a 5-coordinate geometry to three equivalent Cs(1), one Ho(1), and one Si(1) atom. In the second S site, S(2) is bonded in a distorted see-saw-like geometry to one Cs(1), two equivalent Ho(1), and one Si(1) atom. In the third S site, S(3) is bonded in a 5-coordinate geometry to two equivalent Cs(1), two equivalent Ho(1), and one Si(1) atom. In the fourth S site, S(4) is bonded in a 3-coordinate geometry to two equivalent Cs(1), two equivalent Ho(1), and one Si(1) atom. is represented by the CIF card [CIF]
data_CsHoSiS4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.373
_cell_length_b   6.725
_cell_length_c   17.811
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   763.299
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.503  0.492  0.968  1.0
  Cs  Cs1  1  0.997  0.508  0.468  1.0
  Cs  Cs2  1  0.003  0.008  0.032  1.0
  Cs  Cs3  1  0.497  0.992  0.532  1.0
  Ho  Ho4  1  0.292  0.481  0.228  1.0
  Ho  Ho5  1  0.208  0.519  0.728  1.0
  Ho  Ho6  1  0.792  0.019  0.772  1.0
  Ho  Ho7  1  0.708  0.981  0.272  1.0
  Si  Si8  1  0.790  0.518  0.167  1.0
  Si  Si9  1  0.710  0.482  0.667  1.0
  Si  Si10  1  0.290  0.982  0.833  1.0
  Si  Si11  1  0.210  0.018  0.333  1.0
  S  S12  1  0.055  0.513  0.096  1.0
  S  S13  1  0.445  0.487  0.596  1.0
  S  S14  1  0.555  0.987  0.904  1.0
  S  S15  1  0.945  0.013  0.404  1.0
  S  S16  1  0.607  0.427  0.780  1.0
  S  S17  1  0.893  0.573  0.280  1.0
  S  S18  1  0.107  0.073  0.220  1.0
  S  S19  1  0.393  0.927  0.720  1.0
  S  S20  1  0.567  0.751  0.147  1.0
  S  S21  1  0.933  0.249  0.647  1.0
  S  S22  1  0.067  0.749  0.853  1.0
  S  S23  1  0.433  0.251  0.353  1.0
  S  S24  1  0.602  0.254  0.156  1.0
  S  S25  1  0.898  0.746  0.656  1.0
  S  S26  1  0.102  0.246  0.844  1.0
  S  S27  1  0.398  0.754  0.344  1.0
[/CIF]
.