The structure described by SiO2 crystallizes in the tetragonal P4/nbm space group. Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a distorted bent 150 degrees geometry to two equivalent Si(1) atoms. In the second O site, O(2) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. In the third O site, O(3) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to two equivalent Si(1) atoms. is represented by the CIF card [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.781
_cell_length_b   11.781
_cell_length_c   4.371
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   606.690
_cell_formula_units_Z   16
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.738  0.082  0.276  1.0
  Si  Si1  1  0.762  0.582  0.277  1.0
  Si  Si2  1  0.582  0.762  0.276  1.0
  Si  Si3  1  0.082  0.738  0.277  1.0
  Si  Si4  1  0.582  0.238  0.723  1.0
  Si  Si5  1  0.262  0.918  0.276  1.0
  Si  Si6  1  0.418  0.762  0.723  1.0
  Si  Si7  1  0.238  0.418  0.277  1.0
  Si  Si8  1  0.762  0.418  0.724  1.0
  Si  Si9  1  0.082  0.262  0.724  1.0
  Si  Si10  1  0.918  0.262  0.277  1.0
  Si  Si11  1  0.262  0.082  0.723  1.0
  Si  Si12  1  0.918  0.738  0.724  1.0
  Si  Si13  1  0.418  0.238  0.276  1.0
  Si  Si14  1  0.738  0.918  0.723  1.0
  Si  Si15  1  0.238  0.582  0.724  1.0
  O  O16  1  0.823  0.823  0.866  1.0
  O  O17  1  0.859  0.641  0.500  1.0
  O  O18  1  0.188  0.500  0.001  1.0
  O  O19  1  0.500  0.312  0.500  1.0
  O  O20  1  1.000  0.812  0.500  1.0
  O  O21  1  0.641  0.141  0.500  1.0
  O  O22  1  0.823  0.177  0.134  1.0
  O  O23  1  0.677  0.323  0.866  1.0
  O  O24  1  0.177  0.177  0.866  1.0
  O  O25  1  0.359  0.859  0.500  1.0
  O  O26  1  0.000  0.188  0.500  1.0
  O  O27  1  0.500  0.688  0.500  1.0
  O  O28  1  0.677  0.677  0.134  1.0
  O  O29  1  0.177  0.823  0.134  1.0
  O  O30  1  0.812  0.500  0.001  1.0
  O  O31  1  0.188  1.000  0.500  1.0
  O  O32  1  0.000  0.312  0.001  1.0
  O  O33  1  0.812  0.000  0.500  1.0
  O  O34  1  0.323  0.323  0.134  1.0
  O  O35  1  0.500  0.812  0.999  1.0
  O  O36  1  0.323  0.677  0.866  1.0
  O  O37  1  0.688  0.500  0.500  1.0
  O  O38  1  0.500  0.188  0.999  1.0
  O  O39  1  0.859  0.359  0.500  1.0
  O  O40  1  0.641  0.859  0.500  1.0
  O  O41  1  0.688  0.000  0.999  1.0
  O  O42  1  1.000  0.688  0.001  1.0
  O  O43  1  0.141  0.641  0.500  1.0
  O  O44  1  0.312  1.000  0.999  1.0
  O  O45  1  0.359  0.141  0.500  1.0
  O  O46  1  0.312  0.500  0.500  1.0
  O  O47  1  0.141  0.359  0.500  1.0
[/CIF]
.
The structure described by SiO2 crystallizes in the tetragonal P4/nbm space group. Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a distorted bent 150 degrees geometry to two equivalent Si(1) atoms. In the second O site, O(2) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. In the third O site, O(3) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to two equivalent Si(1) atoms. is represented by the CIF card [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.781
_cell_length_b   11.781
_cell_length_c   4.371
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   606.690
_cell_formula_units_Z   16
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.738  0.082  0.276  1.0
  Si  Si1  1  0.762  0.582  0.277  1.0
  Si  Si2  1  0.582  0.762  0.276  1.0
  Si  Si3  1  0.082  0.738  0.277  1.0
  Si  Si4  1  0.582  0.238  0.723  1.0
  Si  Si5  1  0.262  0.918  0.276  1.0
  Si  Si6  1  0.418  0.762  0.723  1.0
  Si  Si7  1  0.238  0.418  0.277  1.0
  Si  Si8  1  0.762  0.418  0.724  1.0
  Si  Si9  1  0.082  0.262  0.724  1.0
  Si  Si10  1  0.918  0.262  0.277  1.0
  Si  Si11  1  0.262  0.082  0.723  1.0
  Si  Si12  1  0.918  0.738  0.724  1.0
  Si  Si13  1  0.418  0.238  0.276  1.0
  Si  Si14  1  0.738  0.918  0.723  1.0
  Si  Si15  1  0.238  0.582  0.724  1.0
  O  O16  1  0.823  0.823  0.866  1.0
  O  O17  1  0.859  0.641  0.500  1.0
  O  O18  1  0.188  0.500  0.001  1.0
  O  O19  1  0.500  0.312  0.500  1.0
  O  O20  1  1.000  0.812  0.500  1.0
  O  O21  1  0.641  0.141  0.500  1.0
  O  O22  1  0.823  0.177  0.134  1.0
  O  O23  1  0.677  0.323  0.866  1.0
  O  O24  1  0.177  0.177  0.866  1.0
  O  O25  1  0.359  0.859  0.500  1.0
  O  O26  1  0.000  0.188  0.500  1.0
  O  O27  1  0.500  0.688  0.500  1.0
  O  O28  1  0.677  0.677  0.134  1.0
  O  O29  1  0.177  0.823  0.134  1.0
  O  O30  1  0.812  0.500  0.001  1.0
  O  O31  1  0.188  1.000  0.500  1.0
  O  O32  1  0.000  0.312  0.001  1.0
  O  O33  1  0.812  0.000  0.500  1.0
  O  O34  1  0.323  0.323  0.134  1.0
  O  O35  1  0.500  0.812  0.999  1.0
  O  O36  1  0.323  0.677  0.866  1.0
  O  O37  1  0.688  0.500  0.500  1.0
  O  O38  1  0.500  0.188  0.999  1.0
  O  O39  1  0.859  0.359  0.500  1.0
  O  O40  1  0.641  0.859  0.500  1.0
  O  O41  1  0.688  0.000  0.999  1.0
  O  O42  1  1.000  0.688  0.001  1.0
  O  O43  1  0.141  0.641  0.500  1.0
  O  O44  1  0.312  1.000  0.999  1.0
  O  O45  1  0.359  0.141  0.500  1.0
  O  O46  1  0.312  0.500  0.500  1.0
  O  O47  1  0.141  0.359  0.500  1.0
[/CIF]
.