The material described by GaAsO4 crystallizes in the trigonal P3_121 space group. Ga(1) is bonded to two equivalent O(1) and two equivalent O(2) atoms to form GaO4 tetrahedra that share corners with four equivalent As(1)O4 tetrahedra. As(1) is bonded to two equivalent O(1) and two equivalent O(2) atoms to form AsO4 tetrahedra that share corners with four equivalent Ga(1)O4 tetrahedra. There are two inequivalent O sites. In the first O site, O(2) is bonded in a bent 120 degrees geometry to one Ga(1) and one As(1) atom. In the second O site, O(1) is bonded in a bent 120 degrees geometry to one Ga(1) and one As(1) atom. is represented by the CIF card [CIF]
data_GaAsO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.986
_cell_length_b   4.986
_cell_length_c   11.463
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   246.776
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.448  0.000  0.333  1.0
  Ga  Ga1  1  0.000  0.448  0.667  1.0
  Ga  Ga2  1  0.552  0.552  0.000  1.0
  As  As3  1  0.447  0.000  0.833  1.0
  As  As4  1  0.000  0.447  0.167  1.0
  As  As5  1  0.553  0.553  0.500  1.0
  O  O6  1  0.299  0.395  0.129  1.0
  O  O7  1  0.605  0.904  0.462  1.0
  O  O8  1  0.096  0.701  0.796  1.0
  O  O9  1  0.904  0.605  0.538  1.0
  O  O10  1  0.701  0.096  0.204  1.0
  O  O11  1  0.395  0.299  0.871  1.0
  O  O12  1  0.396  0.321  0.382  1.0
  O  O13  1  0.679  0.075  0.716  1.0
  O  O14  1  0.925  0.604  0.049  1.0
  O  O15  1  0.075  0.679  0.284  1.0
  O  O16  1  0.604  0.925  0.951  1.0
  O  O17  1  0.321  0.396  0.618  1.0
[/CIF]
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The material described by GaAsO4 crystallizes in the trigonal P3_121 space group. Ga(1) is bonded to two equivalent O(1) and two equivalent O(2) atoms to form GaO4 tetrahedra that share corners with four equivalent As(1)O4 tetrahedra. As(1) is bonded to two equivalent O(1) and two equivalent O(2) atoms to form AsO4 tetrahedra that share corners with four equivalent Ga(1)O4 tetrahedra. There are two inequivalent O sites. In the first O site, O(2) is bonded in a bent 120 degrees geometry to one Ga(1) and one As(1) atom. In the second O site, O(1) is bonded in a bent 120 degrees geometry to one Ga(1) and one As(1) atom. is represented by the CIF card [CIF]
data_GaAsO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.986
_cell_length_b   4.986
_cell_length_c   11.463
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   246.776
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.448  0.000  0.333  1.0
  Ga  Ga1  1  0.000  0.448  0.667  1.0
  Ga  Ga2  1  0.552  0.552  0.000  1.0
  As  As3  1  0.447  0.000  0.833  1.0
  As  As4  1  0.000  0.447  0.167  1.0
  As  As5  1  0.553  0.553  0.500  1.0
  O  O6  1  0.299  0.395  0.129  1.0
  O  O7  1  0.605  0.904  0.462  1.0
  O  O8  1  0.096  0.701  0.796  1.0
  O  O9  1  0.904  0.605  0.538  1.0
  O  O10  1  0.701  0.096  0.204  1.0
  O  O11  1  0.395  0.299  0.871  1.0
  O  O12  1  0.396  0.321  0.382  1.0
  O  O13  1  0.679  0.075  0.716  1.0
  O  O14  1  0.925  0.604  0.049  1.0
  O  O15  1  0.075  0.679  0.284  1.0
  O  O16  1  0.604  0.925  0.951  1.0
  O  O17  1  0.321  0.396  0.618  1.0
[/CIF]
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