The crystal structure described by SiC is Moissanite-6H-like structured and crystallizes in the trigonal R3m space group. There are eighteen inequivalent Si sites. In the first Si site, Si(1,16) is bonded to one C(1,16,25) and three equivalent C(7,17) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2,14,19) is bonded to one C(2,14,19) and three equivalent C(10,21) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(3) is bonded to one C(3) and three equivalent C(12) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(4) is bonded to one C(4) and three equivalent C(20) atoms to form corner-sharing SiC4 tetrahedra. In the fifth Si site, Si(5) is bonded to one C(5) and three equivalent C(13) atoms to form corner-sharing SiC4 tetrahedra. In the sixth Si site, Si(6) is bonded to one C(6) and three equivalent C(11,22) atoms to form corner-sharing SiC4 tetrahedra. In the seventh Si site, Si(7,17) is bonded to one C(7,17) and three equivalent C(24) atoms to form corner-sharing SiC4 tetrahedra. In the eighth Si site, Si(8) is bonded to one C(8) and three equivalent C(1,16,25) atoms to form corner-sharing SiC4 tetrahedra. In the ninth Si site, Si(9,18) is bonded to one C(9,18) and three equivalent C(1,16,25) atoms to form corner-sharing SiC4 tetrahedra. In the tenth Si site, Si(10,21) is bonded to one C(10,21) and three equivalent C(9,18) atoms to form corner-sharing SiC4 tetrahedra. In the eleventh Si site, Si(11,22) is bonded to one C(11,22) and three equivalent C(2,14,19) atoms to form corner-sharing SiC4 tetrahedra. In the twelfth Si site, Si(12) is bonded to one C(12) and three equivalent C(2,14,19) atoms to form corner-sharing SiC4 tetrahedra. In the thirteenth Si site, Si(13) is bonded to one C(13) and three equivalent C(4) atoms to form corner-sharing SiC4 tetrahedra. In the fourteenth Si site, Si(15) is bonded to one C(15) and three equivalent C(23) atoms to form corner-sharing SiC4 tetrahedra. In the fifteenth Si site, Si(20) is bonded to one C(20) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. In the sixteenth Si site, Si(23) is bonded to one C(23) and three equivalent C(6) atoms to form corner-sharing SiC4 tetrahedra. In the seventeenth Si site, Si(24) is bonded to one C(24) and three equivalent C(15) atoms to form corner-sharing SiC4 tetrahedra. In the eighteenth Si site, Si(25) is bonded to one C(1,16,25) and three equivalent C(8) atoms to form corner-sharing SiC4 tetrahedra. There are seventeen inequivalent C sites. In the first C site, C(1,16,25) is bonded to one Si(1,16) and three equivalent Si(9,18) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2,14,19) is bonded to one Si(2,14,19) and three equivalent Si(11,22) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(3) and three equivalent Si(20) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(4) is bonded to one Si(4) and three equivalent Si(13) atoms to form corner-sharing CSi4 tetrahedra. In the fifth C site, C(5) is bonded to one Si(5) and three equivalent Si(10,21) atoms to form corner-sharing CSi4 tetrahedra. In the sixth C site, C(6) is bonded to one Si(6) and three equivalent Si(23) atoms to form corner-sharing CSi4 tetrahedra. In the seventh C site, C(7,17) is bonded to one Si(7,17) and three equivalent Si(1,16) atoms to form corner-sharing CSi4 tetrahedra. In the eighth C site, C(8) is bonded to one Si(8) and three equivalent Si(25) atoms to form corner-sharing CSi4 tetrahedra. In the ninth C site, C(9,18) is bonded to one Si(9,18) and three equivalent Si(7,17) atoms to form corner-sharing CSi4 tetrahedra. In the tenth C site, C(10,21) is bonded to one Si(10,21) and three equivalent Si(2,14,19) atoms to form corner-sharing CSi4 tetrahedra. In the eleventh C site, C(11,22) is bonded to one Si(11,22) and three equivalent Si(2,14,19) atoms to form corner-sharing CSi4 tetrahedra. In the twelfth C site, C(12) is bonded to one Si(12) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra. In the thirteenth C site, C(13) is bonded to one Si(13) and three equivalent Si(5) atoms to form corner-sharing CSi4 tetrahedra. In the fourteenth C site, C(15) is bonded to one Si(15) and three equivalent Si(24) atoms to form corner-sharing CSi4 tetrahedra. In the fifteenth C site, C(20) is bonded to one Si(20) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the sixteenth C site, C(23) is bonded to one Si(23) and three equivalent Si(15) atoms to form corner-sharing CSi4 tetrahedra. In the seventeenth C site, C(24) is bonded to one Si(24) and three equivalent Si(7,17) atoms to form corner-sharing CSi4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.098
_cell_length_b   3.098
_cell_length_c   63.190
_cell_angle_alpha   88.595
_cell_angle_beta   88.595
_cell_angle_gamma   60.000
_symmetry_Int_Tables_number   1
_cell_volume   525.079
_cell_formula_units_Z   25
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.000  0.000  1.000  1.0
  Si  Si1  1  0.960  0.960  0.120  1.0
  Si  Si2  1  0.907  0.907  0.279  1.0
  Si  Si3  1  0.880  0.880  0.360  1.0
  Si  Si4  1  0.853  0.853  0.440  1.0
  Si  Si5  1  0.800  0.800  0.600  1.0
  Si  Si6  1  0.747  0.747  0.760  1.0
  Si  Si7  1  0.720  0.720  0.840  1.0
  Si  Si8  1  0.693  0.693  0.920  1.0
  Si  Si9  1  0.640  0.640  0.080  1.0
  Si  Si10  1  0.613  0.613  0.160  1.0
  Si  Si11  1  0.587  0.587  0.239  1.0
  Si  Si12  1  0.533  0.533  0.400  1.0
  Si  Si13  1  0.493  0.493  0.520  1.0
  Si  Si14  1  0.440  0.440  0.680  1.0
  Si  Si15  1  0.400  0.400  0.800  1.0
  Si  Si16  1  0.347  0.347  0.960  1.0
  Si  Si17  1  0.320  0.320  0.040  1.0
  Si  Si18  1  0.267  0.267  0.200  1.0
  Si  Si19  1  0.227  0.227  0.320  1.0
  Si  Si20  1  0.173  0.173  0.480  1.0
  Si  Si21  1  0.147  0.147  0.560  1.0
  Si  Si22  1  0.120  0.120  0.640  1.0
  Si  Si23  1  0.093  0.093  0.720  1.0
  Si  Si24  1  0.040  0.040  0.880  1.0
  C  C25  1  0.990  0.990  0.030  1.0
  C  C26  1  0.950  0.950  0.150  1.0
  C  C27  1  0.897  0.897  0.309  1.0
  C  C28  1  0.870  0.870  0.390  1.0
  C  C29  1  0.843  0.843  0.471  1.0
  C  C30  1  0.790  0.790  0.630  1.0
  C  C31  1  0.737  0.737  0.790  1.0
  C  C32  1  0.710  0.710  0.870  1.0
  C  C33  1  0.683  0.683  0.950  1.0
  C  C34  1  0.630  0.630  0.110  1.0
  C  C35  1  0.603  0.603  0.190  1.0
  C  C36  1  0.577  0.577  0.270  1.0
  C  C37  1  0.523  0.523  0.431  1.0
  C  C38  1  0.483  0.483  0.550  1.0
  C  C39  1  0.430  0.430  0.710  1.0
  C  C40  1  0.390  0.390  0.830  1.0
  C  C41  1  0.337  0.337  0.990  1.0
  C  C42  1  0.310  0.310  0.070  1.0
  C  C43  1  0.257  0.257  0.230  1.0
  C  C44  1  0.217  0.217  0.350  1.0
  C  C45  1  0.163  0.163  0.510  1.0
  C  C46  1  0.137  0.137  0.590  1.0
  C  C47  1  0.110  0.110  0.670  1.0
  C  C48  1  0.083  0.083  0.750  1.0
  C  C49  1  0.030  0.030  0.910  1.0
[/CIF]
.
The crystal structure described by SiC is Moissanite-6H-like structured and crystallizes in the trigonal R3m space group. There are eighteen inequivalent Si sites. In the first Si site, Si(1,16) is bonded to one C(1,16,25) and three equivalent C(7,17) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2,14,19) is bonded to one C(2,14,19) and three equivalent C(10,21) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(3) is bonded to one C(3) and three equivalent C(12) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(4) is bonded to one C(4) and three equivalent C(20) atoms to form corner-sharing SiC4 tetrahedra. In the fifth Si site, Si(5) is bonded to one C(5) and three equivalent C(13) atoms to form corner-sharing SiC4 tetrahedra. In the sixth Si site, Si(6) is bonded to one C(6) and three equivalent C(11,22) atoms to form corner-sharing SiC4 tetrahedra. In the seventh Si site, Si(7,17) is bonded to one C(7,17) and three equivalent C(24) atoms to form corner-sharing SiC4 tetrahedra. In the eighth Si site, Si(8) is bonded to one C(8) and three equivalent C(1,16,25) atoms to form corner-sharing SiC4 tetrahedra. In the ninth Si site, Si(9,18) is bonded to one C(9,18) and three equivalent C(1,16,25) atoms to form corner-sharing SiC4 tetrahedra. In the tenth Si site, Si(10,21) is bonded to one C(10,21) and three equivalent C(9,18) atoms to form corner-sharing SiC4 tetrahedra. In the eleventh Si site, Si(11,22) is bonded to one C(11,22) and three equivalent C(2,14,19) atoms to form corner-sharing SiC4 tetrahedra. In the twelfth Si site, Si(12) is bonded to one C(12) and three equivalent C(2,14,19) atoms to form corner-sharing SiC4 tetrahedra. In the thirteenth Si site, Si(13) is bonded to one C(13) and three equivalent C(4) atoms to form corner-sharing SiC4 tetrahedra. In the fourteenth Si site, Si(15) is bonded to one C(15) and three equivalent C(23) atoms to form corner-sharing SiC4 tetrahedra. In the fifteenth Si site, Si(20) is bonded to one C(20) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. In the sixteenth Si site, Si(23) is bonded to one C(23) and three equivalent C(6) atoms to form corner-sharing SiC4 tetrahedra. In the seventeenth Si site, Si(24) is bonded to one C(24) and three equivalent C(15) atoms to form corner-sharing SiC4 tetrahedra. In the eighteenth Si site, Si(25) is bonded to one C(1,16,25) and three equivalent C(8) atoms to form corner-sharing SiC4 tetrahedra. There are seventeen inequivalent C sites. In the first C site, C(1,16,25) is bonded to one Si(1,16) and three equivalent Si(9,18) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2,14,19) is bonded to one Si(2,14,19) and three equivalent Si(11,22) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(3) and three equivalent Si(20) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(4) is bonded to one Si(4) and three equivalent Si(13) atoms to form corner-sharing CSi4 tetrahedra. In the fifth C site, C(5) is bonded to one Si(5) and three equivalent Si(10,21) atoms to form corner-sharing CSi4 tetrahedra. In the sixth C site, C(6) is bonded to one Si(6) and three equivalent Si(23) atoms to form corner-sharing CSi4 tetrahedra. In the seventh C site, C(7,17) is bonded to one Si(7,17) and three equivalent Si(1,16) atoms to form corner-sharing CSi4 tetrahedra. In the eighth C site, C(8) is bonded to one Si(8) and three equivalent Si(25) atoms to form corner-sharing CSi4 tetrahedra. In the ninth C site, C(9,18) is bonded to one Si(9,18) and three equivalent Si(7,17) atoms to form corner-sharing CSi4 tetrahedra. In the tenth C site, C(10,21) is bonded to one Si(10,21) and three equivalent Si(2,14,19) atoms to form corner-sharing CSi4 tetrahedra. In the eleventh C site, C(11,22) is bonded to one Si(11,22) and three equivalent Si(2,14,19) atoms to form corner-sharing CSi4 tetrahedra. In the twelfth C site, C(12) is bonded to one Si(12) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra. In the thirteenth C site, C(13) is bonded to one Si(13) and three equivalent Si(5) atoms to form corner-sharing CSi4 tetrahedra. In the fourteenth C site, C(15) is bonded to one Si(15) and three equivalent Si(24) atoms to form corner-sharing CSi4 tetrahedra. In the fifteenth C site, C(20) is bonded to one Si(20) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the sixteenth C site, C(23) is bonded to one Si(23) and three equivalent Si(15) atoms to form corner-sharing CSi4 tetrahedra. In the seventeenth C site, C(24) is bonded to one Si(24) and three equivalent Si(7,17) atoms to form corner-sharing CSi4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.098
_cell_length_b   3.098
_cell_length_c   63.190
_cell_angle_alpha   88.595
_cell_angle_beta   88.595
_cell_angle_gamma   60.000
_symmetry_Int_Tables_number   1
_cell_volume   525.079
_cell_formula_units_Z   25
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.000  0.000  1.000  1.0
  Si  Si1  1  0.960  0.960  0.120  1.0
  Si  Si2  1  0.907  0.907  0.279  1.0
  Si  Si3  1  0.880  0.880  0.360  1.0
  Si  Si4  1  0.853  0.853  0.440  1.0
  Si  Si5  1  0.800  0.800  0.600  1.0
  Si  Si6  1  0.747  0.747  0.760  1.0
  Si  Si7  1  0.720  0.720  0.840  1.0
  Si  Si8  1  0.693  0.693  0.920  1.0
  Si  Si9  1  0.640  0.640  0.080  1.0
  Si  Si10  1  0.613  0.613  0.160  1.0
  Si  Si11  1  0.587  0.587  0.239  1.0
  Si  Si12  1  0.533  0.533  0.400  1.0
  Si  Si13  1  0.493  0.493  0.520  1.0
  Si  Si14  1  0.440  0.440  0.680  1.0
  Si  Si15  1  0.400  0.400  0.800  1.0
  Si  Si16  1  0.347  0.347  0.960  1.0
  Si  Si17  1  0.320  0.320  0.040  1.0
  Si  Si18  1  0.267  0.267  0.200  1.0
  Si  Si19  1  0.227  0.227  0.320  1.0
  Si  Si20  1  0.173  0.173  0.480  1.0
  Si  Si21  1  0.147  0.147  0.560  1.0
  Si  Si22  1  0.120  0.120  0.640  1.0
  Si  Si23  1  0.093  0.093  0.720  1.0
  Si  Si24  1  0.040  0.040  0.880  1.0
  C  C25  1  0.990  0.990  0.030  1.0
  C  C26  1  0.950  0.950  0.150  1.0
  C  C27  1  0.897  0.897  0.309  1.0
  C  C28  1  0.870  0.870  0.390  1.0
  C  C29  1  0.843  0.843  0.471  1.0
  C  C30  1  0.790  0.790  0.630  1.0
  C  C31  1  0.737  0.737  0.790  1.0
  C  C32  1  0.710  0.710  0.870  1.0
  C  C33  1  0.683  0.683  0.950  1.0
  C  C34  1  0.630  0.630  0.110  1.0
  C  C35  1  0.603  0.603  0.190  1.0
  C  C36  1  0.577  0.577  0.270  1.0
  C  C37  1  0.523  0.523  0.431  1.0
  C  C38  1  0.483  0.483  0.550  1.0
  C  C39  1  0.430  0.430  0.710  1.0
  C  C40  1  0.390  0.390  0.830  1.0
  C  C41  1  0.337  0.337  0.990  1.0
  C  C42  1  0.310  0.310  0.070  1.0
  C  C43  1  0.257  0.257  0.230  1.0
  C  C44  1  0.217  0.217  0.350  1.0
  C  C45  1  0.163  0.163  0.510  1.0
  C  C46  1  0.137  0.137  0.590  1.0
  C  C47  1  0.110  0.110  0.670  1.0
  C  C48  1  0.083  0.083  0.750  1.0
  C  C49  1  0.030  0.030  0.910  1.0
[/CIF]
.