The structure described by InGaO3 crystallizes in the hexagonal P6_3/mmc space group. In(1) is bonded to six equivalent O(1) atoms to form InO6 octahedra that share corners with six equivalent Ga(1)O5 trigonal bipyramids and edges with six equivalent In(1)O6 octahedra. Ga(1) is bonded to two equivalent O(1) and three equivalent O(2) atoms to form GaO5 trigonal bipyramids that share corners with six equivalent In(1)O6 octahedra and corners with six equivalent Ga(1)O5 trigonal bipyramids. The corner-sharing octahedral tilt angles are 61°. There are two inequivalent O sites. In the first O site, O(2) is bonded in a trigonal planar geometry to three equivalent Ga(1) atoms. In the second O site, O(1) is bonded to three equivalent In(1) and one Ga(1) atom to form a mixture of distorted edge and corner-sharing OIn3Ga tetrahedra. is represented by the CIF file [CIF]
data_InGaO3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.330
_cell_length_b   3.330
_cell_length_c   12.066
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   115.847
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.000  0.000  0.500  1.0
  In  In1  1  0.000  0.000  0.000  1.0
  Ga  Ga2  1  0.667  0.333  0.750  1.0
  Ga  Ga3  1  0.333  0.667  0.250  1.0
  O  O4  1  0.333  0.667  0.413  1.0
  O  O5  1  0.667  0.333  0.913  1.0
  O  O6  1  0.667  0.333  0.587  1.0
  O  O7  1  0.333  0.667  0.087  1.0
  O  O8  1  0.000  0.000  0.250  1.0
  O  O9  1  0.000  0.000  0.750  1.0
[/CIF]
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The structure described by InGaO3 crystallizes in the hexagonal P6_3/mmc space group. In(1) is bonded to six equivalent O(1) atoms to form InO6 octahedra that share corners with six equivalent Ga(1)O5 trigonal bipyramids and edges with six equivalent In(1)O6 octahedra. Ga(1) is bonded to two equivalent O(1) and three equivalent O(2) atoms to form GaO5 trigonal bipyramids that share corners with six equivalent In(1)O6 octahedra and corners with six equivalent Ga(1)O5 trigonal bipyramids. The corner-sharing octahedral tilt angles are 61°. There are two inequivalent O sites. In the first O site, O(2) is bonded in a trigonal planar geometry to three equivalent Ga(1) atoms. In the second O site, O(1) is bonded to three equivalent In(1) and one Ga(1) atom to form a mixture of distorted edge and corner-sharing OIn3Ga tetrahedra. is represented by the CIF file [CIF]
data_InGaO3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.330
_cell_length_b   3.330
_cell_length_c   12.066
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   115.847
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.000  0.000  0.500  1.0
  In  In1  1  0.000  0.000  0.000  1.0
  Ga  Ga2  1  0.667  0.333  0.750  1.0
  Ga  Ga3  1  0.333  0.667  0.250  1.0
  O  O4  1  0.333  0.667  0.413  1.0
  O  O5  1  0.667  0.333  0.913  1.0
  O  O6  1  0.667  0.333  0.587  1.0
  O  O7  1  0.333  0.667  0.087  1.0
  O  O8  1  0.000  0.000  0.250  1.0
  O  O9  1  0.000  0.000  0.750  1.0
[/CIF]
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