The compound described by In4GeSb2Te is Stannite structured and crystallizes in the tetragonal I-42m space group. In(1) is bonded to one Ge(1), two equivalent Sb(1), and one Te(1) atom to form corner-sharing InGeSb2Te tetrahedra. Ge(1) is bonded to four equivalent In(1) atoms to form GeIn4 tetrahedra that share corners with four equivalent Te(1)In4 tetrahedra and corners with eight equivalent Sb(1)In4 tetrahedra. Sb(1) is bonded to four equivalent In(1) atoms to form SbIn4 tetrahedra that share corners with four equivalent Ge(1)In4 tetrahedra, corners with four equivalent Sb(1)In4 tetrahedra, and corners with four equivalent Te(1)In4 tetrahedra. Te(1) is bonded to four equivalent In(1) atoms to form TeIn4 tetrahedra that share corners with four equivalent Ge(1)In4 tetrahedra and corners with eight equivalent Sb(1)In4 tetrahedra. is represented by the CIF card [CIF]
data_In4GeSb2Te
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.563
_cell_length_b   6.563
_cell_length_c   8.033
_cell_angle_alpha   65.889
_cell_angle_beta   65.889
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   282.478
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.023  0.981  0.995  1.0
  In  In1  1  0.269  0.769  0.505  1.0
  In  In2  1  0.481  0.523  0.995  1.0
  In  In3  1  0.727  0.227  0.505  1.0
  Ge  Ge4  1  0.375  0.875  0.750  1.0
  Sb  Sb5  1  0.625  0.625  0.250  1.0
  Sb  Sb6  1  0.125  0.125  0.250  1.0
  Te  Te7  1  0.875  0.375  0.750  1.0
[/CIF]
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The compound described by In4GeSb2Te is Stannite structured and crystallizes in the tetragonal I-42m space group. In(1) is bonded to one Ge(1), two equivalent Sb(1), and one Te(1) atom to form corner-sharing InGeSb2Te tetrahedra. Ge(1) is bonded to four equivalent In(1) atoms to form GeIn4 tetrahedra that share corners with four equivalent Te(1)In4 tetrahedra and corners with eight equivalent Sb(1)In4 tetrahedra. Sb(1) is bonded to four equivalent In(1) atoms to form SbIn4 tetrahedra that share corners with four equivalent Ge(1)In4 tetrahedra, corners with four equivalent Sb(1)In4 tetrahedra, and corners with four equivalent Te(1)In4 tetrahedra. Te(1) is bonded to four equivalent In(1) atoms to form TeIn4 tetrahedra that share corners with four equivalent Ge(1)In4 tetrahedra and corners with eight equivalent Sb(1)In4 tetrahedra. is represented by the CIF card [CIF]
data_In4GeSb2Te
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.563
_cell_length_b   6.563
_cell_length_c   8.033
_cell_angle_alpha   65.889
_cell_angle_beta   65.889
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   282.478
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.023  0.981  0.995  1.0
  In  In1  1  0.269  0.769  0.505  1.0
  In  In2  1  0.481  0.523  0.995  1.0
  In  In3  1  0.727  0.227  0.505  1.0
  Ge  Ge4  1  0.375  0.875  0.750  1.0
  Sb  Sb5  1  0.625  0.625  0.250  1.0
  Sb  Sb6  1  0.125  0.125  0.250  1.0
  Te  Te7  1  0.875  0.375  0.750  1.0
[/CIF]
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