The material described by V2Si4O11 crystallizes in the triclinic P-1 space group. There are two inequivalent V sites. In the first V site, V(1) is bonded to one O(1), one O(7), one O(8), one O(9), and two equivalent O(11) atoms to form distorted VO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra,  an edgeedge with one V(1)O6 octahedra, and edges with three equivalent V(2)O6 octahedra. In the second V site, V(2) is bonded to one O(11), one O(3), one O(8), one O(9), and two equivalent O(7) atoms to form distorted VO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra,  an edgeedge with one V(2)O6 octahedra, and edges with three equivalent V(1)O6 octahedra. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 13-50°. In the second Si site, Si(2) is bonded to one O(10), one O(11), one O(4), and one O(5) atom to form SiO4 tetrahedra that share  a cornercorner with one V(2)O6 octahedra, corners with two equivalent V(1)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 59-66°. In the third Si site, Si(3) is bonded to one O(2), one O(5), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 59-67°. In the fourth Si site, Si(4) is bonded to one O(10), one O(6), one O(8), and one O(9) atom to form SiO4 tetrahedra that share corners with two equivalent V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 57-62°. There are eleven inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to one V(1) and one Si(1) atom. In the second O site, O(2) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(3) atom. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one V(2) and one Si(1) atom. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 120 degrees geometry to one Si(3) and one Si(4) atom. In the seventh O site, O(7) is bonded to one V(1), two equivalent V(2), and one Si(3) atom to form a mixture of distorted edge and corner-sharing OV3Si tetrahedra. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one V(1), one V(2), and one Si(4) atom. In the ninth O site, O(9) is bonded in a distorted trigonal planar geometry to one V(1), one V(2), and one Si(4) atom. In the tenth O site, O(10) is bonded in a bent 120 degrees geometry to one Si(2) and one Si(4) atom. In the eleventh O site, O(11) is bonded to one V(2), two equivalent V(1), and one Si(2) atom to form a mixture of distorted edge and corner-sharing OV3Si tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_V2Si4O11
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.993
_cell_length_b   7.380
_cell_length_c   8.618
_cell_angle_alpha   99.353
_cell_angle_beta   101.282
_cell_angle_gamma   104.848
_symmetry_Int_Tables_number   1
_cell_volume   410.868
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.115  0.377  0.614  1.0
  V  V1  1  0.613  0.375  0.615  1.0
  V  V2  1  0.387  0.625  0.385  1.0
  V  V3  1  0.885  0.623  0.386  1.0
  Si  Si4  1  0.770  0.620  0.977  1.0
  Si  Si5  1  0.042  0.782  0.777  1.0
  Si  Si6  1  0.480  0.779  0.779  1.0
  Si  Si7  1  0.228  0.018  0.396  1.0
  Si  Si8  1  0.772  0.982  0.604  1.0
  Si  Si9  1  0.520  0.221  0.221  1.0
  Si  Si10  1  0.958  0.218  0.223  1.0
  Si  Si11  1  0.230  0.380  0.023  1.0
  O  O12  1  0.189  0.408  0.840  1.0
  O  O13  1  0.604  0.741  0.943  1.0
  O  O14  1  0.695  0.419  0.840  1.0
  O  O15  1  0.977  0.756  0.942  1.0
  O  O16  1  0.286  0.837  0.815  1.0
  O  O17  1  0.607  0.958  0.715  1.0
  O  O18  1  0.412  0.582  0.627  1.0
  O  O19  1  0.320  0.203  0.555  1.0
  O  O20  1  0.820  0.200  0.571  1.0
  O  O21  1  0.984  0.958  0.705  1.0
  O  O22  1  0.931  0.583  0.627  1.0
  O  O23  1  0.069  0.417  0.373  1.0
  O  O24  1  0.016  0.042  0.295  1.0
  O  O25  1  0.180  0.800  0.429  1.0
  O  O26  1  0.680  0.797  0.445  1.0
  O  O27  1  0.588  0.418  0.373  1.0
  O  O28  1  0.393  0.042  0.285  1.0
  O  O29  1  0.714  0.163  0.185  1.0
  O  O30  1  0.023  0.244  0.058  1.0
  O  O31  1  0.305  0.581  0.160  1.0
  O  O32  1  0.396  0.259  0.057  1.0
  O  O33  1  0.811  0.592  0.160  1.0
[/CIF]
.
The material described by V2Si4O11 crystallizes in the triclinic P-1 space group. There are two inequivalent V sites. In the first V site, V(1) is bonded to one O(1), one O(7), one O(8), one O(9), and two equivalent O(11) atoms to form distorted VO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra,  an edgeedge with one V(1)O6 octahedra, and edges with three equivalent V(2)O6 octahedra. In the second V site, V(2) is bonded to one O(11), one O(3), one O(8), one O(9), and two equivalent O(7) atoms to form distorted VO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra,  an edgeedge with one V(2)O6 octahedra, and edges with three equivalent V(1)O6 octahedra. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 13-50°. In the second Si site, Si(2) is bonded to one O(10), one O(11), one O(4), and one O(5) atom to form SiO4 tetrahedra that share  a cornercorner with one V(2)O6 octahedra, corners with two equivalent V(1)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 59-66°. In the third Si site, Si(3) is bonded to one O(2), one O(5), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 59-67°. In the fourth Si site, Si(4) is bonded to one O(10), one O(6), one O(8), and one O(9) atom to form SiO4 tetrahedra that share corners with two equivalent V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 57-62°. There are eleven inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to one V(1) and one Si(1) atom. In the second O site, O(2) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(3) atom. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one V(2) and one Si(1) atom. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 120 degrees geometry to one Si(3) and one Si(4) atom. In the seventh O site, O(7) is bonded to one V(1), two equivalent V(2), and one Si(3) atom to form a mixture of distorted edge and corner-sharing OV3Si tetrahedra. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one V(1), one V(2), and one Si(4) atom. In the ninth O site, O(9) is bonded in a distorted trigonal planar geometry to one V(1), one V(2), and one Si(4) atom. In the tenth O site, O(10) is bonded in a bent 120 degrees geometry to one Si(2) and one Si(4) atom. In the eleventh O site, O(11) is bonded to one V(2), two equivalent V(1), and one Si(2) atom to form a mixture of distorted edge and corner-sharing OV3Si tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_V2Si4O11
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.993
_cell_length_b   7.380
_cell_length_c   8.618
_cell_angle_alpha   99.353
_cell_angle_beta   101.282
_cell_angle_gamma   104.848
_symmetry_Int_Tables_number   1
_cell_volume   410.868
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.115  0.377  0.614  1.0
  V  V1  1  0.613  0.375  0.615  1.0
  V  V2  1  0.387  0.625  0.385  1.0
  V  V3  1  0.885  0.623  0.386  1.0
  Si  Si4  1  0.770  0.620  0.977  1.0
  Si  Si5  1  0.042  0.782  0.777  1.0
  Si  Si6  1  0.480  0.779  0.779  1.0
  Si  Si7  1  0.228  0.018  0.396  1.0
  Si  Si8  1  0.772  0.982  0.604  1.0
  Si  Si9  1  0.520  0.221  0.221  1.0
  Si  Si10  1  0.958  0.218  0.223  1.0
  Si  Si11  1  0.230  0.380  0.023  1.0
  O  O12  1  0.189  0.408  0.840  1.0
  O  O13  1  0.604  0.741  0.943  1.0
  O  O14  1  0.695  0.419  0.840  1.0
  O  O15  1  0.977  0.756  0.942  1.0
  O  O16  1  0.286  0.837  0.815  1.0
  O  O17  1  0.607  0.958  0.715  1.0
  O  O18  1  0.412  0.582  0.627  1.0
  O  O19  1  0.320  0.203  0.555  1.0
  O  O20  1  0.820  0.200  0.571  1.0
  O  O21  1  0.984  0.958  0.705  1.0
  O  O22  1  0.931  0.583  0.627  1.0
  O  O23  1  0.069  0.417  0.373  1.0
  O  O24  1  0.016  0.042  0.295  1.0
  O  O25  1  0.180  0.800  0.429  1.0
  O  O26  1  0.680  0.797  0.445  1.0
  O  O27  1  0.588  0.418  0.373  1.0
  O  O28  1  0.393  0.042  0.285  1.0
  O  O29  1  0.714  0.163  0.185  1.0
  O  O30  1  0.023  0.244  0.058  1.0
  O  O31  1  0.305  0.581  0.160  1.0
  O  O32  1  0.396  0.259  0.057  1.0
  O  O33  1  0.811  0.592  0.160  1.0
[/CIF]
.