The material structure described by Si2Te(CH3)6 is Indium-like structured and crystallizes in the monoclinic C2/c space group. The structure is zero-dimensional and consists of four 4551-16-0 molecules. Si(1) is bonded to one C(1), one C(2), one C(3), and one Te(1) atom to form distorted corner-sharing SiTeC3 tetrahedra. There are three inequivalent C sites. In the first C site, C(3) is bonded to one Si(1), one H(7), one H(8), and one H(9) atom to form corner-sharing CSiH3 tetrahedra. In the second C site, C(1) is bonded to one Si(1), one H(1), one H(2), and one H(3) atom to form corner-sharing CSiH3 tetrahedra. In the third C site, C(2) is bonded to one Si(1), one H(4), one H(5), and one H(6) atom to form corner-sharing CSiH3 tetrahedra. There are nine inequivalent H sites. In the first H site, H(6) is bonded in a single-bond geometry to one C(2) atom. In the second H site, H(7) is bonded in a single-bond geometry to one C(3) atom. In the third H site, H(8) is bonded in a single-bond geometry to one C(3) atom. In the fourth H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the fifth H site, H(9) is bonded in a single-bond geometry to one C(3) atom. In the sixth H site, H(2) is bonded in a single-bond geometry to one C(1) atom. In the seventh H site, H(3) is bonded in a single-bond geometry to one C(1) atom. In the eighth H site, H(4) is bonded in a single-bond geometry to one C(2) atom. In the ninth H site, H(5) is bonded in a single-bond geometry to one C(2) atom. Te(1) is bonded in a water-like geometry to two equivalent Si(1) atoms. is represented by the CIF card [CIF]
data_Si2Te(H3C)6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.869
_cell_length_b   7.869
_cell_length_c   12.487
_cell_angle_alpha   98.290
_cell_angle_beta   98.290
_cell_angle_gamma   100.777
_symmetry_Int_Tables_number   1
_cell_volume   739.931
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.432  0.202  0.792  1.0
  Si  Si1  1  0.798  0.568  0.708  1.0
  Si  Si2  1  0.568  0.798  0.208  1.0
  Si  Si3  1  0.202  0.432  0.292  1.0
  Te  Te4  1  0.486  0.514  0.750  1.0
  Te  Te5  1  0.514  0.486  0.250  1.0
  H  H6  1  0.486  0.053  0.614  1.0
  H  H7  1  0.947  0.514  0.886  1.0
  H  H8  1  0.514  0.947  0.386  1.0
  H  H9  1  0.053  0.486  0.114  1.0
  H  H10  1  0.349  0.903  0.676  1.0
  H  H11  1  0.097  0.651  0.824  1.0
  H  H12  1  0.651  0.097  0.324  1.0
  H  H13  1  0.903  0.349  0.176  1.0
  H  H14  1  0.260  0.060  0.608  1.0
  H  H15  1  0.940  0.740  0.892  1.0
  H  H16  1  0.740  0.940  0.392  1.0
  H  H17  1  0.060  0.260  0.108  1.0
  H  H18  1  0.744  0.183  0.844  1.0
  H  H19  1  0.817  0.256  0.656  1.0
  H  H20  1  0.256  0.817  0.156  1.0
  H  H21  1  0.183  0.744  0.344  1.0
  H  H22  1  0.657  0.257  0.962  1.0
  H  H23  1  0.743  0.343  0.538  1.0
  H  H24  1  0.343  0.743  0.038  1.0
  H  H25  1  0.257  0.657  0.462  1.0
  H  H26  1  0.604  0.030  0.902  1.0
  H  H27  1  0.970  0.396  0.598  1.0
  H  H28  1  0.396  0.970  0.098  1.0
  H  H29  1  0.030  0.604  0.402  1.0
  H  H30  1  0.208  0.053  0.885  1.0
  H  H31  1  0.947  0.792  0.615  1.0
  H  H32  1  0.792  0.947  0.115  1.0
  H  H33  1  0.053  0.208  0.385  1.0
  H  H34  1  0.263  0.281  0.941  1.0
  H  H35  1  0.719  0.737  0.559  1.0
  H  H36  1  0.737  0.719  0.059  1.0
  H  H37  1  0.281  0.263  0.441  1.0
  H  H38  1  0.120  0.204  0.812  1.0
  H  H39  1  0.796  0.880  0.688  1.0
  H  H40  1  0.880  0.796  0.188  1.0
  H  H41  1  0.204  0.120  0.312  1.0
  C  C42  1  0.376  0.039  0.660  1.0
  C  C43  1  0.961  0.624  0.840  1.0
  C  C44  1  0.624  0.961  0.340  1.0
  C  C45  1  0.039  0.376  0.160  1.0
  C  C46  1  0.627  0.164  0.884  1.0
  C  C47  1  0.836  0.373  0.616  1.0
  C  C48  1  0.373  0.836  0.116  1.0
  C  C49  1  0.164  0.627  0.384  1.0
  C  C50  1  0.237  0.186  0.865  1.0
  C  C51  1  0.814  0.763  0.635  1.0
  C  C52  1  0.763  0.814  0.135  1.0
  C  C53  1  0.186  0.237  0.365  1.0
[/CIF]
.
The material structure described by Si2Te(CH3)6 is Indium-like structured and crystallizes in the monoclinic C2/c space group. The structure is zero-dimensional and consists of four 4551-16-0 molecules. Si(1) is bonded to one C(1), one C(2), one C(3), and one Te(1) atom to form distorted corner-sharing SiTeC3 tetrahedra. There are three inequivalent C sites. In the first C site, C(3) is bonded to one Si(1), one H(7), one H(8), and one H(9) atom to form corner-sharing CSiH3 tetrahedra. In the second C site, C(1) is bonded to one Si(1), one H(1), one H(2), and one H(3) atom to form corner-sharing CSiH3 tetrahedra. In the third C site, C(2) is bonded to one Si(1), one H(4), one H(5), and one H(6) atom to form corner-sharing CSiH3 tetrahedra. There are nine inequivalent H sites. In the first H site, H(6) is bonded in a single-bond geometry to one C(2) atom. In the second H site, H(7) is bonded in a single-bond geometry to one C(3) atom. In the third H site, H(8) is bonded in a single-bond geometry to one C(3) atom. In the fourth H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the fifth H site, H(9) is bonded in a single-bond geometry to one C(3) atom. In the sixth H site, H(2) is bonded in a single-bond geometry to one C(1) atom. In the seventh H site, H(3) is bonded in a single-bond geometry to one C(1) atom. In the eighth H site, H(4) is bonded in a single-bond geometry to one C(2) atom. In the ninth H site, H(5) is bonded in a single-bond geometry to one C(2) atom. Te(1) is bonded in a water-like geometry to two equivalent Si(1) atoms. is represented by the CIF card [CIF]
data_Si2Te(H3C)6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.869
_cell_length_b   7.869
_cell_length_c   12.487
_cell_angle_alpha   98.290
_cell_angle_beta   98.290
_cell_angle_gamma   100.777
_symmetry_Int_Tables_number   1
_cell_volume   739.931
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.432  0.202  0.792  1.0
  Si  Si1  1  0.798  0.568  0.708  1.0
  Si  Si2  1  0.568  0.798  0.208  1.0
  Si  Si3  1  0.202  0.432  0.292  1.0
  Te  Te4  1  0.486  0.514  0.750  1.0
  Te  Te5  1  0.514  0.486  0.250  1.0
  H  H6  1  0.486  0.053  0.614  1.0
  H  H7  1  0.947  0.514  0.886  1.0
  H  H8  1  0.514  0.947  0.386  1.0
  H  H9  1  0.053  0.486  0.114  1.0
  H  H10  1  0.349  0.903  0.676  1.0
  H  H11  1  0.097  0.651  0.824  1.0
  H  H12  1  0.651  0.097  0.324  1.0
  H  H13  1  0.903  0.349  0.176  1.0
  H  H14  1  0.260  0.060  0.608  1.0
  H  H15  1  0.940  0.740  0.892  1.0
  H  H16  1  0.740  0.940  0.392  1.0
  H  H17  1  0.060  0.260  0.108  1.0
  H  H18  1  0.744  0.183  0.844  1.0
  H  H19  1  0.817  0.256  0.656  1.0
  H  H20  1  0.256  0.817  0.156  1.0
  H  H21  1  0.183  0.744  0.344  1.0
  H  H22  1  0.657  0.257  0.962  1.0
  H  H23  1  0.743  0.343  0.538  1.0
  H  H24  1  0.343  0.743  0.038  1.0
  H  H25  1  0.257  0.657  0.462  1.0
  H  H26  1  0.604  0.030  0.902  1.0
  H  H27  1  0.970  0.396  0.598  1.0
  H  H28  1  0.396  0.970  0.098  1.0
  H  H29  1  0.030  0.604  0.402  1.0
  H  H30  1  0.208  0.053  0.885  1.0
  H  H31  1  0.947  0.792  0.615  1.0
  H  H32  1  0.792  0.947  0.115  1.0
  H  H33  1  0.053  0.208  0.385  1.0
  H  H34  1  0.263  0.281  0.941  1.0
  H  H35  1  0.719  0.737  0.559  1.0
  H  H36  1  0.737  0.719  0.059  1.0
  H  H37  1  0.281  0.263  0.441  1.0
  H  H38  1  0.120  0.204  0.812  1.0
  H  H39  1  0.796  0.880  0.688  1.0
  H  H40  1  0.880  0.796  0.188  1.0
  H  H41  1  0.204  0.120  0.312  1.0
  C  C42  1  0.376  0.039  0.660  1.0
  C  C43  1  0.961  0.624  0.840  1.0
  C  C44  1  0.624  0.961  0.340  1.0
  C  C45  1  0.039  0.376  0.160  1.0
  C  C46  1  0.627  0.164  0.884  1.0
  C  C47  1  0.836  0.373  0.616  1.0
  C  C48  1  0.373  0.836  0.116  1.0
  C  C49  1  0.164  0.627  0.384  1.0
  C  C50  1  0.237  0.186  0.865  1.0
  C  C51  1  0.814  0.763  0.635  1.0
  C  C52  1  0.763  0.814  0.135  1.0
  C  C53  1  0.186  0.237  0.365  1.0
[/CIF]
.