The material described by SiP4H28(C5Cl2)2 is alpha Po structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of one SiP4H28(C5Cl2)2 cluster. Si(1) is bonded to two equivalent P(1), two equivalent Cl(1), and two equivalent Cl(2) atoms to form SiP2Cl4 octahedra that share corners with two equivalent C(1)P2H2 tetrahedra, corners with two equivalent C(2)PH3 tetrahedra, and corners with two equivalent C(3)PH3 tetrahedra. There are five inequivalent C sites. In the first C site, C(1) is bonded to one P(1), one P(2), one H(1), and one H(2) atom to form distorted CP2H2 tetrahedra that share  a cornercorner with one Si(1)P2Cl4 octahedra,  a cornercorner with one C(2)PH3 tetrahedra,  a cornercorner with one C(3)PH3 tetrahedra,  a cornercorner with one C(4)PH3 tetrahedra, and  a cornercorner with one C(5)PH3 tetrahedra. The corner-sharing octahedral tilt angles are 66°. In the second C site, C(2) is bonded to one P(1), one H(3), one H(4), and one H(5) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Si(1)P2Cl4 octahedra,  a cornercorner with one C(1)P2H2 tetrahedra, and  a cornercorner with one C(3)PH3 tetrahedra. The corner-sharing octahedral tilt angles are 68°. In the third C site, C(3) is bonded to one P(1), one H(6), one H(7), and one H(8) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Si(1)P2Cl4 octahedra,  a cornercorner with one C(1)P2H2 tetrahedra, and  a cornercorner with one C(2)PH3 tetrahedra. The corner-sharing octahedral tilt angles are 66°. In the fourth C site, C(4) is bonded to one P(2), one H(10), one H(11), and one H(9) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one C(1)P2H2 tetrahedra and  a cornercorner with one C(5)PH3 tetrahedra. In the fifth C site, C(5) is bonded to one P(2), one H(12), one H(13), and one H(14) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one C(1)P2H2 tetrahedra and  a cornercorner with one C(4)PH3 tetrahedra. There are two inequivalent P sites. In the first P site, P(1) is bonded to one Si(1), one C(1), one C(2), and one C(3) atom to form distorted corner-sharing PSiC3 tetrahedra. In the second P site, P(2) is bonded in a distorted trigonal non-coplanar geometry to one C(1), one C(4), and one C(5) atom. There are fourteen inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one C(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one C(2) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one C(2) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one C(2) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one C(3) atom. In the seventh H site, H(7) is bonded in a single-bond geometry to one C(3) atom. In the eighth H site, H(8) is bonded in a single-bond geometry to one C(3) atom. In the ninth H site, H(9) is bonded in a single-bond geometry to one C(4) atom. In the tenth H site, H(10) is bonded in a single-bond geometry to one C(4) atom. In the eleventh H site, H(11) is bonded in a single-bond geometry to one C(4) atom. In the twelfth H site, H(12) is bonded in a single-bond geometry to one C(5) atom. In the thirteenth H site, H(13) is bonded in a single-bond geometry to one C(5) atom. In the fourteenth H site, H(14) is bonded in a single-bond geometry to one C(5) atom. There are two inequivalent Cl sites. In the first Cl site, Cl(1) is bonded in a single-bond geometry to one Si(1) atom. In the second Cl site, Cl(2) is bonded in a single-bond geometry to one Si(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiP4H28(C5Cl2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.070
_cell_length_b   9.189
_cell_length_c   9.263
_cell_angle_alpha   92.634
_cell_angle_beta   91.087
_cell_angle_gamma   93.735
_symmetry_Int_Tables_number   1
_cell_volume   599.700
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.000  0.500  0.500  1.0
  P  P1  1  0.163  0.707  0.628  1.0
  P  P2  1  0.837  0.293  0.372  1.0
  P  P3  1  0.385  0.821  0.912  1.0
  P  P4  1  0.615  0.179  0.088  1.0
  H  H5  1  0.172  0.599  0.859  1.0
  H  H6  1  0.828  0.401  0.141  1.0
  H  H7  1  0.390  0.592  0.769  1.0
  H  H8  1  0.610  0.408  0.231  1.0
  H  H9  1  0.931  0.879  0.577  1.0
  H  H10  1  0.069  0.121  0.423  1.0
  H  H11  1  0.901  0.810  0.752  1.0
  H  H12  1  0.099  0.190  0.248  1.0
  H  H13  1  0.090  0.946  0.722  1.0
  H  H14  1  0.910  0.054  0.278  1.0
  H  H15  1  0.463  0.727  0.504  1.0
  H  H16  1  0.537  0.273  0.496  1.0
  H  H17  1  0.286  0.829  0.423  1.0
  H  H18  1  0.714  0.171  0.577  1.0
  H  H19  1  0.403  0.897  0.589  1.0
  H  H20  1  0.597  0.103  0.411  1.0
  H  H21  1  0.489  0.631  0.074  1.0
  H  H22  1  0.511  0.369  0.926  1.0
  H  H23  1  0.667  0.684  0.949  1.0
  H  H24  1  0.333  0.316  0.051  1.0
  H  H25  1  0.621  0.803  0.101  1.0
  H  H26  1  0.379  0.197  0.899  1.0
  H  H27  1  0.251  0.923  0.130  1.0
  H  H28  1  0.749  0.077  0.870  1.0
  H  H29  1  0.069  0.874  0.998  1.0
  H  H30  1  0.931  0.126  0.002  1.0
  H  H31  1  0.166  0.736  0.102  1.0
  H  H32  1  0.834  0.264  0.898  1.0
  C  C33  1  0.276  0.663  0.798  1.0
  C  C34  1  0.724  0.337  0.202  1.0
  C  C35  1  0.005  0.850  0.675  1.0
  C  C36  1  0.995  0.150  0.325  1.0
  C  C37  1  0.348  0.799  0.526  1.0
  C  C38  1  0.652  0.201  0.474  1.0
  C  C39  1  0.556  0.724  0.019  1.0
  C  C40  1  0.444  0.276  0.981  1.0
  C  C41  1  0.199  0.838  0.048  1.0
  C  C42  1  0.801  0.162  0.952  1.0
  Cl  Cl43  1  0.141  0.342  0.636  1.0
  Cl  Cl44  1  0.859  0.658  0.364  1.0
  Cl  Cl45  1  0.231  0.487  0.338  1.0
  Cl  Cl46  1  0.769  0.513  0.662  1.0
[/CIF]
.
The material described by SiP4H28(C5Cl2)2 is alpha Po structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of one SiP4H28(C5Cl2)2 cluster. Si(1) is bonded to two equivalent P(1), two equivalent Cl(1), and two equivalent Cl(2) atoms to form SiP2Cl4 octahedra that share corners with two equivalent C(1)P2H2 tetrahedra, corners with two equivalent C(2)PH3 tetrahedra, and corners with two equivalent C(3)PH3 tetrahedra. There are five inequivalent C sites. In the first C site, C(1) is bonded to one P(1), one P(2), one H(1), and one H(2) atom to form distorted CP2H2 tetrahedra that share  a cornercorner with one Si(1)P2Cl4 octahedra,  a cornercorner with one C(2)PH3 tetrahedra,  a cornercorner with one C(3)PH3 tetrahedra,  a cornercorner with one C(4)PH3 tetrahedra, and  a cornercorner with one C(5)PH3 tetrahedra. The corner-sharing octahedral tilt angles are 66°. In the second C site, C(2) is bonded to one P(1), one H(3), one H(4), and one H(5) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Si(1)P2Cl4 octahedra,  a cornercorner with one C(1)P2H2 tetrahedra, and  a cornercorner with one C(3)PH3 tetrahedra. The corner-sharing octahedral tilt angles are 68°. In the third C site, C(3) is bonded to one P(1), one H(6), one H(7), and one H(8) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Si(1)P2Cl4 octahedra,  a cornercorner with one C(1)P2H2 tetrahedra, and  a cornercorner with one C(2)PH3 tetrahedra. The corner-sharing octahedral tilt angles are 66°. In the fourth C site, C(4) is bonded to one P(2), one H(10), one H(11), and one H(9) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one C(1)P2H2 tetrahedra and  a cornercorner with one C(5)PH3 tetrahedra. In the fifth C site, C(5) is bonded to one P(2), one H(12), one H(13), and one H(14) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one C(1)P2H2 tetrahedra and  a cornercorner with one C(4)PH3 tetrahedra. There are two inequivalent P sites. In the first P site, P(1) is bonded to one Si(1), one C(1), one C(2), and one C(3) atom to form distorted corner-sharing PSiC3 tetrahedra. In the second P site, P(2) is bonded in a distorted trigonal non-coplanar geometry to one C(1), one C(4), and one C(5) atom. There are fourteen inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one C(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one C(2) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one C(2) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one C(2) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one C(3) atom. In the seventh H site, H(7) is bonded in a single-bond geometry to one C(3) atom. In the eighth H site, H(8) is bonded in a single-bond geometry to one C(3) atom. In the ninth H site, H(9) is bonded in a single-bond geometry to one C(4) atom. In the tenth H site, H(10) is bonded in a single-bond geometry to one C(4) atom. In the eleventh H site, H(11) is bonded in a single-bond geometry to one C(4) atom. In the twelfth H site, H(12) is bonded in a single-bond geometry to one C(5) atom. In the thirteenth H site, H(13) is bonded in a single-bond geometry to one C(5) atom. In the fourteenth H site, H(14) is bonded in a single-bond geometry to one C(5) atom. There are two inequivalent Cl sites. In the first Cl site, Cl(1) is bonded in a single-bond geometry to one Si(1) atom. In the second Cl site, Cl(2) is bonded in a single-bond geometry to one Si(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiP4H28(C5Cl2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.070
_cell_length_b   9.189
_cell_length_c   9.263
_cell_angle_alpha   92.634
_cell_angle_beta   91.087
_cell_angle_gamma   93.735
_symmetry_Int_Tables_number   1
_cell_volume   599.700
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.000  0.500  0.500  1.0
  P  P1  1  0.163  0.707  0.628  1.0
  P  P2  1  0.837  0.293  0.372  1.0
  P  P3  1  0.385  0.821  0.912  1.0
  P  P4  1  0.615  0.179  0.088  1.0
  H  H5  1  0.172  0.599  0.859  1.0
  H  H6  1  0.828  0.401  0.141  1.0
  H  H7  1  0.390  0.592  0.769  1.0
  H  H8  1  0.610  0.408  0.231  1.0
  H  H9  1  0.931  0.879  0.577  1.0
  H  H10  1  0.069  0.121  0.423  1.0
  H  H11  1  0.901  0.810  0.752  1.0
  H  H12  1  0.099  0.190  0.248  1.0
  H  H13  1  0.090  0.946  0.722  1.0
  H  H14  1  0.910  0.054  0.278  1.0
  H  H15  1  0.463  0.727  0.504  1.0
  H  H16  1  0.537  0.273  0.496  1.0
  H  H17  1  0.286  0.829  0.423  1.0
  H  H18  1  0.714  0.171  0.577  1.0
  H  H19  1  0.403  0.897  0.589  1.0
  H  H20  1  0.597  0.103  0.411  1.0
  H  H21  1  0.489  0.631  0.074  1.0
  H  H22  1  0.511  0.369  0.926  1.0
  H  H23  1  0.667  0.684  0.949  1.0
  H  H24  1  0.333  0.316  0.051  1.0
  H  H25  1  0.621  0.803  0.101  1.0
  H  H26  1  0.379  0.197  0.899  1.0
  H  H27  1  0.251  0.923  0.130  1.0
  H  H28  1  0.749  0.077  0.870  1.0
  H  H29  1  0.069  0.874  0.998  1.0
  H  H30  1  0.931  0.126  0.002  1.0
  H  H31  1  0.166  0.736  0.102  1.0
  H  H32  1  0.834  0.264  0.898  1.0
  C  C33  1  0.276  0.663  0.798  1.0
  C  C34  1  0.724  0.337  0.202  1.0
  C  C35  1  0.005  0.850  0.675  1.0
  C  C36  1  0.995  0.150  0.325  1.0
  C  C37  1  0.348  0.799  0.526  1.0
  C  C38  1  0.652  0.201  0.474  1.0
  C  C39  1  0.556  0.724  0.019  1.0
  C  C40  1  0.444  0.276  0.981  1.0
  C  C41  1  0.199  0.838  0.048  1.0
  C  C42  1  0.801  0.162  0.952  1.0
  Cl  Cl43  1  0.141  0.342  0.636  1.0
  Cl  Cl44  1  0.859  0.658  0.364  1.0
  Cl  Cl45  1  0.231  0.487  0.338  1.0
  Cl  Cl46  1  0.769  0.513  0.662  1.0
[/CIF]
.