The material structure described by SiO2 is low (alpha) Cristobalite structured and crystallizes in the tetragonal P4_32_12 space group. Si(1) is bonded to four equivalent O(1) atoms to form corner-sharing SiO4 tetrahedra. O(1) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.976
_cell_length_b   4.976
_cell_length_c   6.901
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   170.842
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.197  0.197  0.000  1.0
  Si  Si1  1  0.303  0.697  0.750  1.0
  Si  Si2  1  0.697  0.303  0.250  1.0
  Si  Si3  1  0.803  0.803  0.500  1.0
  O  O4  1  0.610  0.738  0.682  1.0
  O  O5  1  0.390  0.262  0.182  1.0
  O  O6  1  0.738  0.610  0.318  1.0
  O  O7  1  0.238  0.890  0.932  1.0
  O  O8  1  0.262  0.390  0.818  1.0
  O  O9  1  0.110  0.762  0.568  1.0
  O  O10  1  0.890  0.238  0.068  1.0
  O  O11  1  0.762  0.110  0.432  1.0
[/CIF]
.
The material structure described by SiO2 is low (alpha) Cristobalite structured and crystallizes in the tetragonal P4_32_12 space group. Si(1) is bonded to four equivalent O(1) atoms to form corner-sharing SiO4 tetrahedra. O(1) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.976
_cell_length_b   4.976
_cell_length_c   6.901
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   170.842
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.197  0.197  0.000  1.0
  Si  Si1  1  0.303  0.697  0.750  1.0
  Si  Si2  1  0.697  0.303  0.250  1.0
  Si  Si3  1  0.803  0.803  0.500  1.0
  O  O4  1  0.610  0.738  0.682  1.0
  O  O5  1  0.390  0.262  0.182  1.0
  O  O6  1  0.738  0.610  0.318  1.0
  O  O7  1  0.238  0.890  0.932  1.0
  O  O8  1  0.262  0.390  0.818  1.0
  O  O9  1  0.110  0.762  0.568  1.0
  O  O10  1  0.890  0.238  0.068  1.0
  O  O11  1  0.762  0.110  0.432  1.0
[/CIF]
.