The compound described by GaN(SiC) is Stannite-like structured and crystallizes in the orthorhombic Pmn2_1 space group. Ga(1) is bonded to three equivalent C(1) and one N(1) atom to form GaC3N tetrahedra that share corners with six equivalent Ga(1)C3N tetrahedra and corners with six equivalent Si(1)CN3 tetrahedra. Si(1) is bonded to one C(1) and three equivalent N(1) atoms to form SiCN3 tetrahedra that share corners with six equivalent Ga(1)C3N tetrahedra and corners with six equivalent Si(1)CN3 tetrahedra. C(1) is bonded to three equivalent Ga(1) and one Si(1) atom to form CGa3Si tetrahedra that share corners with six equivalent C(1)Ga3Si tetrahedra and corners with six equivalent N(1)GaSi3 tetrahedra. N(1) is bonded to one Ga(1) and three equivalent Si(1) atoms to form NGaSi3 tetrahedra that share corners with six equivalent C(1)Ga3Si tetrahedra and corners with six equivalent N(1)GaSi3 tetrahedra. is represented by the CIF file [CIF]
data_GaSiCN
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.149
_cell_length_b   5.090
_cell_length_c   5.603
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   89.792
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.514  0.934  1.0
  Ga  Ga1  1  0.000  0.014  0.066  1.0
  Si  Si2  1  0.500  0.995  0.592  1.0
  Si  Si3  1  0.000  0.495  0.408  1.0
  C  C4  1  0.500  0.895  0.894  1.0
  C  C5  1  0.000  0.395  0.106  1.0
  N  N6  1  0.500  0.360  0.555  1.0
  N  N7  1  0.000  0.860  0.445  1.0
[/CIF]
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The compound described by GaN(SiC) is Stannite-like structured and crystallizes in the orthorhombic Pmn2_1 space group. Ga(1) is bonded to three equivalent C(1) and one N(1) atom to form GaC3N tetrahedra that share corners with six equivalent Ga(1)C3N tetrahedra and corners with six equivalent Si(1)CN3 tetrahedra. Si(1) is bonded to one C(1) and three equivalent N(1) atoms to form SiCN3 tetrahedra that share corners with six equivalent Ga(1)C3N tetrahedra and corners with six equivalent Si(1)CN3 tetrahedra. C(1) is bonded to three equivalent Ga(1) and one Si(1) atom to form CGa3Si tetrahedra that share corners with six equivalent C(1)Ga3Si tetrahedra and corners with six equivalent N(1)GaSi3 tetrahedra. N(1) is bonded to one Ga(1) and three equivalent Si(1) atoms to form NGaSi3 tetrahedra that share corners with six equivalent C(1)Ga3Si tetrahedra and corners with six equivalent N(1)GaSi3 tetrahedra. is represented by the CIF file [CIF]
data_GaSiCN
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.149
_cell_length_b   5.090
_cell_length_c   5.603
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   89.792
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.514  0.934  1.0
  Ga  Ga1  1  0.000  0.014  0.066  1.0
  Si  Si2  1  0.500  0.995  0.592  1.0
  Si  Si3  1  0.000  0.495  0.408  1.0
  C  C4  1  0.500  0.895  0.894  1.0
  C  C5  1  0.000  0.395  0.106  1.0
  N  N6  1  0.500  0.360  0.555  1.0
  N  N7  1  0.000  0.860  0.445  1.0
[/CIF]
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