The crystal structure described by Na3LiGa4(SiO3)8 is Esseneite-derived structured and crystallizes in the monoclinic P2 space group. There are three inequivalent Na sites. In the first Na site, Na(1) is bonded in a 8-coordinate geometry to two equivalent O(10), two equivalent O(12), two equivalent O(4), and two equivalent O(5) atoms. In the second Na site, Na(2) is bonded in a 8-coordinate geometry to two equivalent O(1), two equivalent O(11), two equivalent O(8), and two equivalent O(9) atoms. In the third Na site, Na(3) is bonded in a 8-coordinate geometry to two equivalent O(10), two equivalent O(12), two equivalent O(2), and two equivalent O(7) atoms. Li(1) is bonded in a 6-coordinate geometry to two equivalent O(3), two equivalent O(6), and two equivalent O(9) atoms. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(1), two equivalent O(6), and two equivalent O(8) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. In the second Ga site, Ga(2) is bonded to two equivalent O(2), two equivalent O(5), and two equivalent O(7) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, and edges with two equivalent Ga(4)O6 octahedra. In the third Ga site, Ga(3) is bonded to two equivalent O(3), two equivalent O(6), and two equivalent O(8) atoms to form GaO6 octahedra that share corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(1)O6 octahedra. In the fourth Ga site, Ga(4) is bonded to two equivalent O(4), two equivalent O(5), and two equivalent O(7) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(2)O6 octahedra. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(11), one O(5), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra, and corners with two equivalent Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 36-59°. In the second Si site, Si(2) is bonded to one O(10), one O(12), one O(2), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra, and corners with two equivalent Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 35-61°. In the third Si site, Si(3) is bonded to one O(11), one O(3), one O(7), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra, and corners with two equivalent Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 38-59°. In the fourth Si site, Si(4) is bonded to one O(10), one O(12), one O(4), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 35-60°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a distorted T-shaped geometry to one Na(2), one Ga(1), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted T-shaped geometry to one Na(3), one Ga(2), and one Si(2) atom. In the third O site, O(3) is bonded in a distorted T-shaped geometry to one Li(1), one Ga(3), and one Si(3) atom. In the fourth O site, O(4) is bonded in a distorted T-shaped geometry to one Na(1), one Ga(4), and one Si(4) atom. In the fifth O site, O(5) is bonded to one Na(1), one Ga(2), one Ga(4), and one Si(1) atom to form a mixture of distorted edge and corner-sharing ONaGa2Si tetrahedra. In the sixth O site, O(6) is bonded to one Li(1), one Ga(1), one Ga(3), and one Si(2) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(6)LiGa2Si tetrahedra, corners with two equivalent O(8)NaGa2Si tetrahedra,  an edgeedge with one O(6)LiGa2Si tetrahedra, and  an edgeedge with one O(8)NaGa2Si tetrahedra. In the seventh O site, O(7) is bonded in a 4-coordinate geometry to one Na(3), one Ga(2), one Ga(4), and one Si(3) atom. In the eighth O site, O(8) is bonded to one Na(2), one Ga(1), one Ga(3), and one Si(4) atom to form distorted ONaGa2Si tetrahedra that share  a cornercorner with one O(8)NaGa2Si tetrahedra, corners with two equivalent O(6)LiGa2Si tetrahedra,  an edgeedge with one O(6)LiGa2Si tetrahedra, and  an edgeedge with one O(8)NaGa2Si tetrahedra. In the ninth O site, O(9) is bonded in a 2-coordinate geometry to one Na(2), one Li(1), one Si(1), and one Si(3) atom. In the tenth O site, O(10) is bonded in a 2-coordinate geometry to one Na(1), one Na(3), one Si(2), and one Si(4) atom. In the eleventh O site, O(11) is bonded in a 3-coordinate geometry to one Na(2), one Si(1), and one Si(3) atom. In the twelfth O site, O(12) is bonded in a 2-coordinate geometry to one Na(1), one Na(3), one Si(2), and one Si(4) atom. is represented by the CIF card [CIF]
data_Na3LiGa4(SiO3)8
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.782
_cell_length_b   5.342
_cell_length_c   9.487
_cell_angle_alpha   76.163
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   432.148
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Na  Na0  1  0.298  0.000  0.000  1.0
  Na  Na1  1  0.202  0.000  0.500  1.0
  Na  Na2  1  0.703  0.500  0.000  1.0
  Li  Li3  1  0.781  0.500  0.500  1.0
  Ga  Ga4  1  0.401  0.500  0.500  1.0
  Ga  Ga5  1  0.901  0.000  0.000  1.0
  Ga  Ga6  1  0.602  0.000  0.500  1.0
  Ga  Ga7  1  0.099  0.500  0.000  1.0
  Si  Si8  1  0.089  0.695  0.292  1.0
  Si  Si9  1  0.592  0.194  0.791  1.0
  Si  Si10  1  0.089  0.305  0.708  1.0
  Si  Si11  1  0.592  0.806  0.209  1.0
  Si  Si12  1  0.909  0.802  0.707  1.0
  Si  Si13  1  0.409  0.307  0.209  1.0
  Si  Si14  1  0.909  0.198  0.293  1.0
  Si  Si15  1  0.409  0.693  0.791  1.0
  O  O16  1  0.259  0.695  0.359  1.0
  O  O17  1  0.759  0.193  0.860  1.0
  O  O18  1  0.259  0.305  0.641  1.0
  O  O19  1  0.759  0.807  0.140  1.0
  O  O20  1  0.742  0.795  0.636  1.0
  O  O21  1  0.242  0.306  0.141  1.0
  O  O22  1  0.742  0.205  0.364  1.0
  O  O23  1  0.242  0.694  0.859  1.0
  O  O24  1  0.078  0.772  0.113  1.0
  O  O25  1  0.585  0.276  0.611  1.0
  O  O26  1  0.078  0.228  0.887  1.0
  O  O27  1  0.585  0.724  0.389  1.0
  O  O28  1  0.921  0.727  0.886  1.0
  O  O29  1  0.422  0.228  0.389  1.0
  O  O30  1  0.921  0.273  0.114  1.0
  O  O31  1  0.422  0.772  0.611  1.0
  O  O32  1  0.006  0.415  0.355  1.0
  O  O33  1  0.508  0.912  0.850  1.0
  O  O34  1  0.006  0.585  0.645  1.0
  O  O35  1  0.508  0.088  0.150  1.0
  O  O36  1  0.992  0.085  0.647  1.0
  O  O37  1  0.493  0.589  0.148  1.0
  O  O38  1  0.992  0.915  0.353  1.0
  O  O39  1  0.493  0.411  0.852  1.0
[/CIF]
.
The crystal structure described by Na3LiGa4(SiO3)8 is Esseneite-derived structured and crystallizes in the monoclinic P2 space group. There are three inequivalent Na sites. In the first Na site, Na(1) is bonded in a 8-coordinate geometry to two equivalent O(10), two equivalent O(12), two equivalent O(4), and two equivalent O(5) atoms. In the second Na site, Na(2) is bonded in a 8-coordinate geometry to two equivalent O(1), two equivalent O(11), two equivalent O(8), and two equivalent O(9) atoms. In the third Na site, Na(3) is bonded in a 8-coordinate geometry to two equivalent O(10), two equivalent O(12), two equivalent O(2), and two equivalent O(7) atoms. Li(1) is bonded in a 6-coordinate geometry to two equivalent O(3), two equivalent O(6), and two equivalent O(9) atoms. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(1), two equivalent O(6), and two equivalent O(8) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. In the second Ga site, Ga(2) is bonded to two equivalent O(2), two equivalent O(5), and two equivalent O(7) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, and edges with two equivalent Ga(4)O6 octahedra. In the third Ga site, Ga(3) is bonded to two equivalent O(3), two equivalent O(6), and two equivalent O(8) atoms to form GaO6 octahedra that share corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(1)O6 octahedra. In the fourth Ga site, Ga(4) is bonded to two equivalent O(4), two equivalent O(5), and two equivalent O(7) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(2)O6 octahedra. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(11), one O(5), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra, and corners with two equivalent Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 36-59°. In the second Si site, Si(2) is bonded to one O(10), one O(12), one O(2), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra, and corners with two equivalent Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 35-61°. In the third Si site, Si(3) is bonded to one O(11), one O(3), one O(7), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra, and corners with two equivalent Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 38-59°. In the fourth Si site, Si(4) is bonded to one O(10), one O(12), one O(4), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 35-60°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a distorted T-shaped geometry to one Na(2), one Ga(1), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted T-shaped geometry to one Na(3), one Ga(2), and one Si(2) atom. In the third O site, O(3) is bonded in a distorted T-shaped geometry to one Li(1), one Ga(3), and one Si(3) atom. In the fourth O site, O(4) is bonded in a distorted T-shaped geometry to one Na(1), one Ga(4), and one Si(4) atom. In the fifth O site, O(5) is bonded to one Na(1), one Ga(2), one Ga(4), and one Si(1) atom to form a mixture of distorted edge and corner-sharing ONaGa2Si tetrahedra. In the sixth O site, O(6) is bonded to one Li(1), one Ga(1), one Ga(3), and one Si(2) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(6)LiGa2Si tetrahedra, corners with two equivalent O(8)NaGa2Si tetrahedra,  an edgeedge with one O(6)LiGa2Si tetrahedra, and  an edgeedge with one O(8)NaGa2Si tetrahedra. In the seventh O site, O(7) is bonded in a 4-coordinate geometry to one Na(3), one Ga(2), one Ga(4), and one Si(3) atom. In the eighth O site, O(8) is bonded to one Na(2), one Ga(1), one Ga(3), and one Si(4) atom to form distorted ONaGa2Si tetrahedra that share  a cornercorner with one O(8)NaGa2Si tetrahedra, corners with two equivalent O(6)LiGa2Si tetrahedra,  an edgeedge with one O(6)LiGa2Si tetrahedra, and  an edgeedge with one O(8)NaGa2Si tetrahedra. In the ninth O site, O(9) is bonded in a 2-coordinate geometry to one Na(2), one Li(1), one Si(1), and one Si(3) atom. In the tenth O site, O(10) is bonded in a 2-coordinate geometry to one Na(1), one Na(3), one Si(2), and one Si(4) atom. In the eleventh O site, O(11) is bonded in a 3-coordinate geometry to one Na(2), one Si(1), and one Si(3) atom. In the twelfth O site, O(12) is bonded in a 2-coordinate geometry to one Na(1), one Na(3), one Si(2), and one Si(4) atom. is represented by the CIF card [CIF]
data_Na3LiGa4(SiO3)8
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.782
_cell_length_b   5.342
_cell_length_c   9.487
_cell_angle_alpha   76.163
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   432.148
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Na  Na0  1  0.298  0.000  0.000  1.0
  Na  Na1  1  0.202  0.000  0.500  1.0
  Na  Na2  1  0.703  0.500  0.000  1.0
  Li  Li3  1  0.781  0.500  0.500  1.0
  Ga  Ga4  1  0.401  0.500  0.500  1.0
  Ga  Ga5  1  0.901  0.000  0.000  1.0
  Ga  Ga6  1  0.602  0.000  0.500  1.0
  Ga  Ga7  1  0.099  0.500  0.000  1.0
  Si  Si8  1  0.089  0.695  0.292  1.0
  Si  Si9  1  0.592  0.194  0.791  1.0
  Si  Si10  1  0.089  0.305  0.708  1.0
  Si  Si11  1  0.592  0.806  0.209  1.0
  Si  Si12  1  0.909  0.802  0.707  1.0
  Si  Si13  1  0.409  0.307  0.209  1.0
  Si  Si14  1  0.909  0.198  0.293  1.0
  Si  Si15  1  0.409  0.693  0.791  1.0
  O  O16  1  0.259  0.695  0.359  1.0
  O  O17  1  0.759  0.193  0.860  1.0
  O  O18  1  0.259  0.305  0.641  1.0
  O  O19  1  0.759  0.807  0.140  1.0
  O  O20  1  0.742  0.795  0.636  1.0
  O  O21  1  0.242  0.306  0.141  1.0
  O  O22  1  0.742  0.205  0.364  1.0
  O  O23  1  0.242  0.694  0.859  1.0
  O  O24  1  0.078  0.772  0.113  1.0
  O  O25  1  0.585  0.276  0.611  1.0
  O  O26  1  0.078  0.228  0.887  1.0
  O  O27  1  0.585  0.724  0.389  1.0
  O  O28  1  0.921  0.727  0.886  1.0
  O  O29  1  0.422  0.228  0.389  1.0
  O  O30  1  0.921  0.273  0.114  1.0
  O  O31  1  0.422  0.772  0.611  1.0
  O  O32  1  0.006  0.415  0.355  1.0
  O  O33  1  0.508  0.912  0.850  1.0
  O  O34  1  0.006  0.585  0.645  1.0
  O  O35  1  0.508  0.088  0.150  1.0
  O  O36  1  0.992  0.085  0.647  1.0
  O  O37  1  0.493  0.589  0.148  1.0
  O  O38  1  0.992  0.915  0.353  1.0
  O  O39  1  0.493  0.411  0.852  1.0
[/CIF]
.