The crystal structure described by BaH2SiO4 crystallizes in the triclinic P-1 space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 10-coordinate geometry to one H(3), one O(1), one O(3), one O(4), one O(5), one O(6), one O(7), one O(8), and two equivalent O(2) atoms. In the second Ba site, Ba(2) is bonded in a 9-coordinate geometry to one O(1), one O(2), one O(3), one O(4), one O(5), one O(6), one O(8), and two equivalent O(7) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a tetrahedral geometry to one O(1), one O(3), one O(4), and one O(7) atom. In the second Si site, Si(2) is bonded in a tetrahedral geometry to one O(2), one O(5), one O(6), and one O(8) atom. There are four inequivalent H sites. In the first H site, H(1) is bonded in a linear geometry to one O(3) and one O(6) atom. In the second H site, H(2) is bonded in a single-bond geometry to one O(8) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Ba(1) and one O(5) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one O(4) atom. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to one Ba(1), one Ba(2), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted single-bond geometry to one Ba(2), two equivalent Ba(1), and one Si(2) atom. In the third O site, O(3) is bonded in a distorted bent 120 degrees geometry to one Ba(1), one Ba(2), one Si(1), and one H(1) atom. In the fourth O site, O(4) is bonded in a distorted bent 120 degrees geometry to one Ba(1), one Ba(2), one Si(1), and one H(4) atom. In the fifth O site, O(5) is bonded in a 2-coordinate geometry to one Ba(1), one Ba(2), one Si(2), and one H(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 120 degrees geometry to one Ba(1), one Ba(2), one Si(2), and one H(1) atom. In the seventh O site, O(7) is bonded in a distorted single-bond geometry to one Ba(1), two equivalent Ba(2), and one Si(1) atom. In the eighth O site, O(8) is bonded in a bent 120 degrees geometry to one Ba(1), one Ba(2), one Si(2), and one H(2) atom. is represented by the CIF card [CIF]
data_BaSi(HO2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.221
_cell_length_b   7.613
_cell_length_c   7.686
_cell_angle_alpha   88.778
_cell_angle_beta   92.821
_cell_angle_gamma   77.767
_symmetry_Int_Tables_number   1
_cell_volume   412.213
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.085  0.789  0.196  1.0
  Ba  Ba1  1  0.915  0.211  0.804  1.0
  Ba  Ba2  1  0.410  0.701  0.696  1.0
  Ba  Ba3  1  0.590  0.299  0.304  1.0
  Si  Si4  1  0.583  0.761  0.218  1.0
  Si  Si5  1  0.417  0.239  0.782  1.0
  Si  Si6  1  0.107  0.254  0.273  1.0
  Si  Si7  1  0.893  0.746  0.727  1.0
  H  H8  1  0.764  0.591  0.010  1.0
  H  H9  1  0.236  0.409  0.990  1.0
  H  H10  1  0.289  0.089  0.501  1.0
  H  H11  1  0.711  0.911  0.499  1.0
  H  H12  1  0.053  0.392  0.524  1.0
  H  H13  1  0.947  0.608  0.476  1.0
  H  H14  1  0.391  0.951  0.991  1.0
  H  H15  1  0.609  0.049  0.009  1.0
  O  O16  1  0.696  0.915  0.275  1.0
  O  O17  1  0.304  0.085  0.725  1.0
  O  O18  1  0.972  0.164  0.147  1.0
  O  O19  1  0.028  0.836  0.853  1.0
  O  O20  1  0.737  0.588  0.139  1.0
  O  O21  1  0.263  0.412  0.861  1.0
  O  O22  1  0.427  0.829  0.042  1.0
  O  O23  1  0.573  0.171  0.958  1.0
  O  O24  1  0.975  0.334  0.446  1.0
  O  O25  1  0.025  0.666  0.554  1.0
  O  O26  1  0.205  0.408  0.193  1.0
  O  O27  1  0.795  0.592  0.807  1.0
  O  O28  1  0.466  0.674  0.357  1.0
  O  O29  1  0.534  0.326  0.643  1.0
  O  O30  1  0.276  0.090  0.369  1.0
  O  O31  1  0.724  0.910  0.631  1.0
[/CIF]
.
The crystal structure described by BaH2SiO4 crystallizes in the triclinic P-1 space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 10-coordinate geometry to one H(3), one O(1), one O(3), one O(4), one O(5), one O(6), one O(7), one O(8), and two equivalent O(2) atoms. In the second Ba site, Ba(2) is bonded in a 9-coordinate geometry to one O(1), one O(2), one O(3), one O(4), one O(5), one O(6), one O(8), and two equivalent O(7) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a tetrahedral geometry to one O(1), one O(3), one O(4), and one O(7) atom. In the second Si site, Si(2) is bonded in a tetrahedral geometry to one O(2), one O(5), one O(6), and one O(8) atom. There are four inequivalent H sites. In the first H site, H(1) is bonded in a linear geometry to one O(3) and one O(6) atom. In the second H site, H(2) is bonded in a single-bond geometry to one O(8) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Ba(1) and one O(5) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one O(4) atom. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to one Ba(1), one Ba(2), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted single-bond geometry to one Ba(2), two equivalent Ba(1), and one Si(2) atom. In the third O site, O(3) is bonded in a distorted bent 120 degrees geometry to one Ba(1), one Ba(2), one Si(1), and one H(1) atom. In the fourth O site, O(4) is bonded in a distorted bent 120 degrees geometry to one Ba(1), one Ba(2), one Si(1), and one H(4) atom. In the fifth O site, O(5) is bonded in a 2-coordinate geometry to one Ba(1), one Ba(2), one Si(2), and one H(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 120 degrees geometry to one Ba(1), one Ba(2), one Si(2), and one H(1) atom. In the seventh O site, O(7) is bonded in a distorted single-bond geometry to one Ba(1), two equivalent Ba(2), and one Si(1) atom. In the eighth O site, O(8) is bonded in a bent 120 degrees geometry to one Ba(1), one Ba(2), one Si(2), and one H(2) atom. is represented by the CIF card [CIF]
data_BaSi(HO2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.221
_cell_length_b   7.613
_cell_length_c   7.686
_cell_angle_alpha   88.778
_cell_angle_beta   92.821
_cell_angle_gamma   77.767
_symmetry_Int_Tables_number   1
_cell_volume   412.213
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.085  0.789  0.196  1.0
  Ba  Ba1  1  0.915  0.211  0.804  1.0
  Ba  Ba2  1  0.410  0.701  0.696  1.0
  Ba  Ba3  1  0.590  0.299  0.304  1.0
  Si  Si4  1  0.583  0.761  0.218  1.0
  Si  Si5  1  0.417  0.239  0.782  1.0
  Si  Si6  1  0.107  0.254  0.273  1.0
  Si  Si7  1  0.893  0.746  0.727  1.0
  H  H8  1  0.764  0.591  0.010  1.0
  H  H9  1  0.236  0.409  0.990  1.0
  H  H10  1  0.289  0.089  0.501  1.0
  H  H11  1  0.711  0.911  0.499  1.0
  H  H12  1  0.053  0.392  0.524  1.0
  H  H13  1  0.947  0.608  0.476  1.0
  H  H14  1  0.391  0.951  0.991  1.0
  H  H15  1  0.609  0.049  0.009  1.0
  O  O16  1  0.696  0.915  0.275  1.0
  O  O17  1  0.304  0.085  0.725  1.0
  O  O18  1  0.972  0.164  0.147  1.0
  O  O19  1  0.028  0.836  0.853  1.0
  O  O20  1  0.737  0.588  0.139  1.0
  O  O21  1  0.263  0.412  0.861  1.0
  O  O22  1  0.427  0.829  0.042  1.0
  O  O23  1  0.573  0.171  0.958  1.0
  O  O24  1  0.975  0.334  0.446  1.0
  O  O25  1  0.025  0.666  0.554  1.0
  O  O26  1  0.205  0.408  0.193  1.0
  O  O27  1  0.795  0.592  0.807  1.0
  O  O28  1  0.466  0.674  0.357  1.0
  O  O29  1  0.534  0.326  0.643  1.0
  O  O30  1  0.276  0.090  0.369  1.0
  O  O31  1  0.724  0.910  0.631  1.0
[/CIF]
.