The compound described by Cd2SiO4 crystallizes in the triclinic P1 space group. There are four inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one O(1), one O(2), one O(3), one O(4), one O(6), and one O(7) atom to form distorted CdO6 pentagonal pyramids that share corners with four equivalent Cd(4)O6 pentagonal pyramids, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with two equivalent Cd(2)O6 pentagonal pyramids, edges with two equivalent Cd(3)O6 pentagonal pyramids, and  an edgeedge with one Si(1)O4 tetrahedra. In the second Cd site, Cd(2) is bonded to one O(1), one O(2), one O(3), one O(4), one O(5), and one O(8) atom to form distorted CdO6 pentagonal pyramids that share corners with four equivalent Cd(3)O6 pentagonal pyramids, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with two equivalent Cd(1)O6 pentagonal pyramids, edges with two equivalent Cd(4)O6 pentagonal pyramids, and  an edgeedge with one Si(1)O4 tetrahedra. In the third Cd site, Cd(3) is bonded to one O(2), one O(4), one O(5), one O(6), one O(7), and one O(8) atom to form distorted CdO6 pentagonal pyramids that share corners with four equivalent Cd(2)O6 pentagonal pyramids, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with two equivalent Cd(1)O6 pentagonal pyramids, edges with two equivalent Cd(4)O6 pentagonal pyramids, and  an edgeedge with one Si(2)O4 tetrahedra. In the fourth Cd site, Cd(4) is bonded to one O(1), one O(3), one O(5), one O(6), one O(7), and one O(8) atom to form distorted CdO6 pentagonal pyramids that share corners with four equivalent Cd(1)O6 pentagonal pyramids, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with two equivalent Cd(2)O6 pentagonal pyramids, edges with two equivalent Cd(3)O6 pentagonal pyramids, and  an edgeedge with one Si(2)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share corners with two equivalent Cd(1)O6 pentagonal pyramids, corners with two equivalent Cd(2)O6 pentagonal pyramids, corners with two equivalent Cd(3)O6 pentagonal pyramids, corners with two equivalent Cd(4)O6 pentagonal pyramids,  an edgeedge with one Cd(1)O6 pentagonal pyramid, and  an edgeedge with one Cd(2)O6 pentagonal pyramid. In the second Si site, Si(2) is bonded to one O(5), one O(6), one O(7), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Cd(1)O6 pentagonal pyramids, corners with two equivalent Cd(2)O6 pentagonal pyramids, corners with two equivalent Cd(3)O6 pentagonal pyramids, corners with two equivalent Cd(4)O6 pentagonal pyramids,  an edgeedge with one Cd(3)O6 pentagonal pyramid, and  an edgeedge with one Cd(4)O6 pentagonal pyramid. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(2), one Cd(4), and one Si(1) atom. In the second O site, O(2) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(2), one Cd(3), and one Si(1) atom. In the third O site, O(3) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(2), one Cd(4), and one Si(1) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(2), one Cd(3), and one Si(1) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to one Cd(2), one Cd(3), one Cd(4), and one Si(2) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(3), one Cd(4), and one Si(2) atom. In the seventh O site, O(7) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(3), one Cd(4), and one Si(2) atom. In the eighth O site, O(8) is bonded in a 4-coordinate geometry to one Cd(2), one Cd(3), one Cd(4), and one Si(2) atom. is represented by the CIF card [CIF]
data_Cd2SiO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.819
_cell_length_b   6.734
_cell_length_c   5.867
_cell_angle_alpha   76.359
_cell_angle_beta   56.823
_cell_angle_gamma   46.819
_symmetry_Int_Tables_number   1
_cell_volume   183.633
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cd  Cd0  1  0.562  0.190  0.568  1.0
  Cd  Cd1  1  0.190  0.565  0.194  1.0
  Cd  Cd2  1  0.447  0.811  0.432  1.0
  Cd  Cd3  1  0.806  0.449  0.809  1.0
  Si  Si4  1  0.879  0.878  0.876  1.0
  Si  Si5  1  0.126  0.120  0.133  1.0
  O  O6  1  0.683  0.208  0.862  1.0
  O  O7  1  0.748  0.860  0.201  1.0
  O  O8  1  0.856  0.742  0.696  1.0
  O  O9  1  0.199  0.691  0.754  1.0
  O  O10  1  0.303  0.803  0.148  1.0
  O  O11  1  0.249  0.154  0.788  1.0
  O  O12  1  0.795  0.314  0.251  1.0
  O  O13  1  0.150  0.243  0.304  1.0
[/CIF]
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The compound described by Cd2SiO4 crystallizes in the triclinic P1 space group. There are four inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one O(1), one O(2), one O(3), one O(4), one O(6), and one O(7) atom to form distorted CdO6 pentagonal pyramids that share corners with four equivalent Cd(4)O6 pentagonal pyramids, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with two equivalent Cd(2)O6 pentagonal pyramids, edges with two equivalent Cd(3)O6 pentagonal pyramids, and  an edgeedge with one Si(1)O4 tetrahedra. In the second Cd site, Cd(2) is bonded to one O(1), one O(2), one O(3), one O(4), one O(5), and one O(8) atom to form distorted CdO6 pentagonal pyramids that share corners with four equivalent Cd(3)O6 pentagonal pyramids, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with two equivalent Cd(1)O6 pentagonal pyramids, edges with two equivalent Cd(4)O6 pentagonal pyramids, and  an edgeedge with one Si(1)O4 tetrahedra. In the third Cd site, Cd(3) is bonded to one O(2), one O(4), one O(5), one O(6), one O(7), and one O(8) atom to form distorted CdO6 pentagonal pyramids that share corners with four equivalent Cd(2)O6 pentagonal pyramids, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with two equivalent Cd(1)O6 pentagonal pyramids, edges with two equivalent Cd(4)O6 pentagonal pyramids, and  an edgeedge with one Si(2)O4 tetrahedra. In the fourth Cd site, Cd(4) is bonded to one O(1), one O(3), one O(5), one O(6), one O(7), and one O(8) atom to form distorted CdO6 pentagonal pyramids that share corners with four equivalent Cd(1)O6 pentagonal pyramids, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with two equivalent Cd(2)O6 pentagonal pyramids, edges with two equivalent Cd(3)O6 pentagonal pyramids, and  an edgeedge with one Si(2)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share corners with two equivalent Cd(1)O6 pentagonal pyramids, corners with two equivalent Cd(2)O6 pentagonal pyramids, corners with two equivalent Cd(3)O6 pentagonal pyramids, corners with two equivalent Cd(4)O6 pentagonal pyramids,  an edgeedge with one Cd(1)O6 pentagonal pyramid, and  an edgeedge with one Cd(2)O6 pentagonal pyramid. In the second Si site, Si(2) is bonded to one O(5), one O(6), one O(7), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Cd(1)O6 pentagonal pyramids, corners with two equivalent Cd(2)O6 pentagonal pyramids, corners with two equivalent Cd(3)O6 pentagonal pyramids, corners with two equivalent Cd(4)O6 pentagonal pyramids,  an edgeedge with one Cd(3)O6 pentagonal pyramid, and  an edgeedge with one Cd(4)O6 pentagonal pyramid. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(2), one Cd(4), and one Si(1) atom. In the second O site, O(2) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(2), one Cd(3), and one Si(1) atom. In the third O site, O(3) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(2), one Cd(4), and one Si(1) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(2), one Cd(3), and one Si(1) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to one Cd(2), one Cd(3), one Cd(4), and one Si(2) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(3), one Cd(4), and one Si(2) atom. In the seventh O site, O(7) is bonded in a 4-coordinate geometry to one Cd(1), one Cd(3), one Cd(4), and one Si(2) atom. In the eighth O site, O(8) is bonded in a 4-coordinate geometry to one Cd(2), one Cd(3), one Cd(4), and one Si(2) atom. is represented by the CIF card [CIF]
data_Cd2SiO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.819
_cell_length_b   6.734
_cell_length_c   5.867
_cell_angle_alpha   76.359
_cell_angle_beta   56.823
_cell_angle_gamma   46.819
_symmetry_Int_Tables_number   1
_cell_volume   183.633
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cd  Cd0  1  0.562  0.190  0.568  1.0
  Cd  Cd1  1  0.190  0.565  0.194  1.0
  Cd  Cd2  1  0.447  0.811  0.432  1.0
  Cd  Cd3  1  0.806  0.449  0.809  1.0
  Si  Si4  1  0.879  0.878  0.876  1.0
  Si  Si5  1  0.126  0.120  0.133  1.0
  O  O6  1  0.683  0.208  0.862  1.0
  O  O7  1  0.748  0.860  0.201  1.0
  O  O8  1  0.856  0.742  0.696  1.0
  O  O9  1  0.199  0.691  0.754  1.0
  O  O10  1  0.303  0.803  0.148  1.0
  O  O11  1  0.249  0.154  0.788  1.0
  O  O12  1  0.795  0.314  0.251  1.0
  O  O13  1  0.150  0.243  0.304  1.0
[/CIF]
.