The compound described by Y4Si3O11F2 crystallizes in the triclinic P-1 space group. There are four inequivalent Y sites. In the first Y site, Y(1) is bonded in a 8-coordinate geometry to one O(1), one O(3), one O(4), one O(6), one O(7), one O(9), one F(1), and one F(2) atom. In the second Y site, Y(2) is bonded to one O(3), one O(7), two equivalent O(1), two equivalent O(2), and one F(1) atom to form distorted YO6F pentagonal bipyramids that share  a cornercorner with one Si(2)O4 tetrahedra, corners with three equivalent Si(1)O4 tetrahedra, edges with two equivalent Y(2)O6F pentagonal bipyramids, and  an edgeedge with one Si(1)O4 tetrahedra. In the third Y site, Y(3) is bonded to one O(11), one O(5), two equivalent O(10), two equivalent O(8), and one F(2) atom to form distorted YO6F pentagonal bipyramids that share  a cornercorner with one Si(2)O4 tetrahedra, corners with three equivalent Si(3)O4 tetrahedra, edges with two equivalent Y(3)O6F pentagonal bipyramids, and  an edgeedge with one Si(3)O4 tetrahedra. In the fourth Y site, Y(4) is bonded in a 7-coordinate geometry to one O(10), one O(11), one O(5), one O(6), one O(9), one F(1), and one F(2) atom. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share corners with three equivalent Y(2)O6F pentagonal bipyramids,  a cornercorner with one Si(2)O4 tetrahedra, and  an edgeedge with one Y(2)O6F pentagonal bipyramid. In the second Si site, Si(2) is bonded to one O(4), one O(5), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one Y(2)O6F pentagonal bipyramid,  a cornercorner with one Y(3)O6F pentagonal bipyramid, and  a cornercorner with one Si(1)O4 tetrahedra. In the third Si site, Si(3) is bonded to one O(10), one O(11), one O(8), and one O(9) atom to form SiO4 tetrahedra that share corners with three equivalent Y(3)O6F pentagonal bipyramids and  an edgeedge with one Y(3)O6F pentagonal bipyramid. There are eleven inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to one Y(1), two equivalent Y(2), and one Si(1) atom. In the second O site, O(2) is bonded in a 3-coordinate geometry to two equivalent Y(2) and one Si(1) atom. In the third O site, O(3) is bonded in a 3-coordinate geometry to one Y(1), one Y(2), and one Si(1) atom. In the fourth O site, O(4) is bonded in a distorted bent 120 degrees geometry to one Y(1), one Si(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a distorted trigonal planar geometry to one Y(3), one Y(4), and one Si(2) atom. In the sixth O site, O(6) is bonded in a distorted trigonal planar geometry to one Y(1), one Y(4), and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to one Y(1), one Y(2), and one Si(2) atom. In the eighth O site, O(8) is bonded in a 3-coordinate geometry to two equivalent Y(3) and one Si(3) atom. In the ninth O site, O(9) is bonded in a distorted trigonal planar geometry to one Y(1), one Y(4), and one Si(3) atom. In the tenth O site, O(10) is bonded to one Y(4), two equivalent Y(3), and one Si(3) atom to form distorted edge-sharing OY3Si tetrahedra. In the eleventh O site, O(11) is bonded in a 3-coordinate geometry to one Y(3), one Y(4), and one Si(3) atom. There are two inequivalent F sites. In the first F site, F(1) is bonded in a trigonal planar geometry to one Y(1), one Y(2), and one Y(4) atom. In the second F site, F(2) is bonded in a distorted trigonal non-coplanar geometry to one Y(1), one Y(3), and one Y(4) atom. is represented by the CIF card [CIF]
data_Y4Si3O11F2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.563
_cell_length_b   6.686
_cell_length_c   13.428
_cell_angle_alpha   87.581
_cell_angle_beta   85.787
_cell_angle_gamma   60.850
_symmetry_Int_Tables_number   1
_cell_volume   513.220
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Y  Y0  1  0.677  0.620  0.797  1.0
  Y  Y1  1  0.323  0.380  0.203  1.0
  Y  Y2  1  0.060  0.726  0.973  1.0
  Y  Y3  1  0.940  0.274  0.027  1.0
  Y  Y4  1  0.781  0.787  0.471  1.0
  Y  Y5  1  0.219  0.213  0.529  1.0
  Y  Y6  1  0.180  0.693  0.670  1.0
  Y  Y7  1  0.820  0.307  0.330  1.0
  Si  Si8  1  0.509  0.749  0.065  1.0
  Si  Si9  1  0.491  0.251  0.935  1.0
  Si  Si10  1  0.766  0.847  0.217  1.0
  Si  Si11  1  0.234  0.153  0.783  1.0
  Si  Si12  1  0.732  0.270  0.579  1.0
  Si  Si13  1  0.268  0.730  0.421  1.0
  O  O14  1  0.734  0.662  0.980  1.0
  O  O15  1  0.266  0.338  0.020  1.0
  O  O16  1  0.747  0.096  0.981  1.0
  O  O17  1  0.253  0.904  0.019  1.0
  O  O18  1  0.445  0.499  0.887  1.0
  O  O19  1  0.555  0.501  0.113  1.0
  O  O20  1  0.535  0.901  0.152  1.0
  O  O21  1  0.465  0.099  0.848  1.0
  O  O22  1  0.796  0.677  0.313  1.0
  O  O23  1  0.204  0.323  0.687  1.0
  O  O24  1  0.314  0.890  0.753  1.0
  O  O25  1  0.686  0.110  0.247  1.0
  O  O26  1  0.994  0.284  0.856  1.0
  O  O27  1  0.006  0.716  0.144  1.0
  O  O28  1  0.594  0.160  0.522  1.0
  O  O29  1  0.406  0.840  0.478  1.0
  O  O30  1  0.578  0.454  0.667  1.0
  O  O31  1  0.422  0.546  0.333  1.0
  O  O32  1  0.174  0.595  0.507  1.0
  O  O33  1  0.826  0.405  0.493  1.0
  O  O34  1  0.984  0.063  0.613  1.0
  O  O35  1  0.016  0.937  0.387  1.0
  F  F36  1  0.963  0.732  0.814  1.0
  F  F37  1  0.037  0.268  0.186  1.0
  F  F38  1  0.798  0.738  0.645  1.0
  F  F39  1  0.202  0.262  0.355  1.0
[/CIF]
.
The compound described by Y4Si3O11F2 crystallizes in the triclinic P-1 space group. There are four inequivalent Y sites. In the first Y site, Y(1) is bonded in a 8-coordinate geometry to one O(1), one O(3), one O(4), one O(6), one O(7), one O(9), one F(1), and one F(2) atom. In the second Y site, Y(2) is bonded to one O(3), one O(7), two equivalent O(1), two equivalent O(2), and one F(1) atom to form distorted YO6F pentagonal bipyramids that share  a cornercorner with one Si(2)O4 tetrahedra, corners with three equivalent Si(1)O4 tetrahedra, edges with two equivalent Y(2)O6F pentagonal bipyramids, and  an edgeedge with one Si(1)O4 tetrahedra. In the third Y site, Y(3) is bonded to one O(11), one O(5), two equivalent O(10), two equivalent O(8), and one F(2) atom to form distorted YO6F pentagonal bipyramids that share  a cornercorner with one Si(2)O4 tetrahedra, corners with three equivalent Si(3)O4 tetrahedra, edges with two equivalent Y(3)O6F pentagonal bipyramids, and  an edgeedge with one Si(3)O4 tetrahedra. In the fourth Y site, Y(4) is bonded in a 7-coordinate geometry to one O(10), one O(11), one O(5), one O(6), one O(9), one F(1), and one F(2) atom. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share corners with three equivalent Y(2)O6F pentagonal bipyramids,  a cornercorner with one Si(2)O4 tetrahedra, and  an edgeedge with one Y(2)O6F pentagonal bipyramid. In the second Si site, Si(2) is bonded to one O(4), one O(5), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one Y(2)O6F pentagonal bipyramid,  a cornercorner with one Y(3)O6F pentagonal bipyramid, and  a cornercorner with one Si(1)O4 tetrahedra. In the third Si site, Si(3) is bonded to one O(10), one O(11), one O(8), and one O(9) atom to form SiO4 tetrahedra that share corners with three equivalent Y(3)O6F pentagonal bipyramids and  an edgeedge with one Y(3)O6F pentagonal bipyramid. There are eleven inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to one Y(1), two equivalent Y(2), and one Si(1) atom. In the second O site, O(2) is bonded in a 3-coordinate geometry to two equivalent Y(2) and one Si(1) atom. In the third O site, O(3) is bonded in a 3-coordinate geometry to one Y(1), one Y(2), and one Si(1) atom. In the fourth O site, O(4) is bonded in a distorted bent 120 degrees geometry to one Y(1), one Si(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a distorted trigonal planar geometry to one Y(3), one Y(4), and one Si(2) atom. In the sixth O site, O(6) is bonded in a distorted trigonal planar geometry to one Y(1), one Y(4), and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to one Y(1), one Y(2), and one Si(2) atom. In the eighth O site, O(8) is bonded in a 3-coordinate geometry to two equivalent Y(3) and one Si(3) atom. In the ninth O site, O(9) is bonded in a distorted trigonal planar geometry to one Y(1), one Y(4), and one Si(3) atom. In the tenth O site, O(10) is bonded to one Y(4), two equivalent Y(3), and one Si(3) atom to form distorted edge-sharing OY3Si tetrahedra. In the eleventh O site, O(11) is bonded in a 3-coordinate geometry to one Y(3), one Y(4), and one Si(3) atom. There are two inequivalent F sites. In the first F site, F(1) is bonded in a trigonal planar geometry to one Y(1), one Y(2), and one Y(4) atom. In the second F site, F(2) is bonded in a distorted trigonal non-coplanar geometry to one Y(1), one Y(3), and one Y(4) atom. is represented by the CIF card [CIF]
data_Y4Si3O11F2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.563
_cell_length_b   6.686
_cell_length_c   13.428
_cell_angle_alpha   87.581
_cell_angle_beta   85.787
_cell_angle_gamma   60.850
_symmetry_Int_Tables_number   1
_cell_volume   513.220
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Y  Y0  1  0.677  0.620  0.797  1.0
  Y  Y1  1  0.323  0.380  0.203  1.0
  Y  Y2  1  0.060  0.726  0.973  1.0
  Y  Y3  1  0.940  0.274  0.027  1.0
  Y  Y4  1  0.781  0.787  0.471  1.0
  Y  Y5  1  0.219  0.213  0.529  1.0
  Y  Y6  1  0.180  0.693  0.670  1.0
  Y  Y7  1  0.820  0.307  0.330  1.0
  Si  Si8  1  0.509  0.749  0.065  1.0
  Si  Si9  1  0.491  0.251  0.935  1.0
  Si  Si10  1  0.766  0.847  0.217  1.0
  Si  Si11  1  0.234  0.153  0.783  1.0
  Si  Si12  1  0.732  0.270  0.579  1.0
  Si  Si13  1  0.268  0.730  0.421  1.0
  O  O14  1  0.734  0.662  0.980  1.0
  O  O15  1  0.266  0.338  0.020  1.0
  O  O16  1  0.747  0.096  0.981  1.0
  O  O17  1  0.253  0.904  0.019  1.0
  O  O18  1  0.445  0.499  0.887  1.0
  O  O19  1  0.555  0.501  0.113  1.0
  O  O20  1  0.535  0.901  0.152  1.0
  O  O21  1  0.465  0.099  0.848  1.0
  O  O22  1  0.796  0.677  0.313  1.0
  O  O23  1  0.204  0.323  0.687  1.0
  O  O24  1  0.314  0.890  0.753  1.0
  O  O25  1  0.686  0.110  0.247  1.0
  O  O26  1  0.994  0.284  0.856  1.0
  O  O27  1  0.006  0.716  0.144  1.0
  O  O28  1  0.594  0.160  0.522  1.0
  O  O29  1  0.406  0.840  0.478  1.0
  O  O30  1  0.578  0.454  0.667  1.0
  O  O31  1  0.422  0.546  0.333  1.0
  O  O32  1  0.174  0.595  0.507  1.0
  O  O33  1  0.826  0.405  0.493  1.0
  O  O34  1  0.984  0.063  0.613  1.0
  O  O35  1  0.016  0.937  0.387  1.0
  F  F36  1  0.963  0.732  0.814  1.0
  F  F37  1  0.037  0.268  0.186  1.0
  F  F38  1  0.798  0.738  0.645  1.0
  F  F39  1  0.202  0.262  0.355  1.0
[/CIF]
.