The material described by HoPt2Si2 crystallizes in the tetragonal P4/nmm space group. Ho(1) is bonded in a 16-coordinate geometry to four equivalent Pt(1), four equivalent Pt(2), four equivalent Si(1), and four equivalent Si(2) atoms. There are two inequivalent Pt sites. In the first Pt site, Pt(1) is bonded in a 5-coordinate geometry to four equivalent Ho(1), one Si(1), and four equivalent Si(2) atoms. In the second Pt site, Pt(2) is bonded to four equivalent Ho(1) and four equivalent Si(1) atoms to form distorted PtHo4Si4 tetrahedra that share corners with twelve equivalent Si(2)Ho4Pt4 tetrahedra, edges with two equivalent Si(2)Ho4Pt4 tetrahedra, edges with four equivalent Pt(2)Ho4Si4 tetrahedra, and faces with four equivalent Pt(2)Ho4Si4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to four equivalent Ho(1), one Pt(1), and four equivalent Pt(2) atoms. In the second Si site, Si(2) is bonded to four equivalent Ho(1) and four equivalent Pt(1) atoms to form distorted SiHo4Pt4 tetrahedra that share corners with twelve equivalent Pt(2)Ho4Si4 tetrahedra, edges with two equivalent Pt(2)Ho4Si4 tetrahedra, edges with four equivalent Si(2)Ho4Pt4 tetrahedra, and faces with four equivalent Si(2)Ho4Pt4 tetrahedra. is represented by the CIF file [CIF]
data_Ho(SiPt)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.141
_cell_length_b   4.141
_cell_length_c   9.913
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   170.028
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.750  0.750  0.747  1.0
  Ho  Ho1  1  0.250  0.250  0.253  1.0
  Si  Si2  1  0.750  0.750  0.135  1.0
  Si  Si3  1  0.250  0.750  0.500  1.0
  Si  Si4  1  0.250  0.250  0.865  1.0
  Si  Si5  1  0.750  0.250  0.500  1.0
  Pt  Pt6  1  0.250  0.250  0.625  1.0
  Pt  Pt7  1  0.750  0.250  0.000  1.0
  Pt  Pt8  1  0.250  0.750  0.000  1.0
  Pt  Pt9  1  0.750  0.750  0.375  1.0
[/CIF]
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The material described by HoPt2Si2 crystallizes in the tetragonal P4/nmm space group. Ho(1) is bonded in a 16-coordinate geometry to four equivalent Pt(1), four equivalent Pt(2), four equivalent Si(1), and four equivalent Si(2) atoms. There are two inequivalent Pt sites. In the first Pt site, Pt(1) is bonded in a 5-coordinate geometry to four equivalent Ho(1), one Si(1), and four equivalent Si(2) atoms. In the second Pt site, Pt(2) is bonded to four equivalent Ho(1) and four equivalent Si(1) atoms to form distorted PtHo4Si4 tetrahedra that share corners with twelve equivalent Si(2)Ho4Pt4 tetrahedra, edges with two equivalent Si(2)Ho4Pt4 tetrahedra, edges with four equivalent Pt(2)Ho4Si4 tetrahedra, and faces with four equivalent Pt(2)Ho4Si4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to four equivalent Ho(1), one Pt(1), and four equivalent Pt(2) atoms. In the second Si site, Si(2) is bonded to four equivalent Ho(1) and four equivalent Pt(1) atoms to form distorted SiHo4Pt4 tetrahedra that share corners with twelve equivalent Pt(2)Ho4Si4 tetrahedra, edges with two equivalent Pt(2)Ho4Si4 tetrahedra, edges with four equivalent Si(2)Ho4Pt4 tetrahedra, and faces with four equivalent Si(2)Ho4Pt4 tetrahedra. is represented by the CIF file [CIF]
data_Ho(SiPt)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.141
_cell_length_b   4.141
_cell_length_c   9.913
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   170.028
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.750  0.750  0.747  1.0
  Ho  Ho1  1  0.250  0.250  0.253  1.0
  Si  Si2  1  0.750  0.750  0.135  1.0
  Si  Si3  1  0.250  0.750  0.500  1.0
  Si  Si4  1  0.250  0.250  0.865  1.0
  Si  Si5  1  0.750  0.250  0.500  1.0
  Pt  Pt6  1  0.250  0.250  0.625  1.0
  Pt  Pt7  1  0.750  0.250  0.000  1.0
  Pt  Pt8  1  0.250  0.750  0.000  1.0
  Pt  Pt9  1  0.750  0.750  0.375  1.0
[/CIF]
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