The material structure described by Li2GaAlSi2(H2O5)2 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Li sites. In the first Li site, Li(1) is bonded to one O(1), one O(10), one O(3), and one O(5) atom to form LiO4 tetrahedra that share  a cornercorner with one Al(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, and corners with two equivalent Si(1)O4 tetrahedra. In the second Li site, Li(2) is bonded to one O(2), one O(4), one O(6), and one O(9) atom to form LiO4 tetrahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra, corners with two equivalent Al(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. Ga(1) is bonded to one O(3), one O(5), one O(7), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Li(2)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra, corners with two equivalent Li(1)O4 tetrahedra, and corners with three equivalent Si(2)O4 tetrahedra. Al(1) is bonded to one O(10), one O(4), one O(6), and one O(8) atom to form AlO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, and corners with three equivalent Si(1)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(3), one O(6), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(2)O4 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with two equivalent Li(1)O4 tetrahedra, and corners with three equivalent Al(1)O4 tetrahedra. In the second Si site, Si(2) is bonded to one O(4), one O(5), one O(7), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, and corners with three equivalent Ga(1)O4 tetrahedra. There are four inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one O(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one O(2) atom. In the third H site, H(3) is bonded in a single-bond geometry to one O(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one O(2) atom. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal non-coplanar geometry to one Li(1), one H(1), and one H(3) atom. In the second O site, O(2) is bonded in a distorted trigonal non-coplanar geometry to one Li(2), one H(2), and one H(4) atom. In the third O site, O(3) is bonded in a trigonal planar geometry to one Li(1), one Ga(1), and one Si(1) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Li(2), one Al(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Li(1), one Ga(1), and one Si(2) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Li(2), one Al(1), and one Si(1) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one Ga(1) and one Si(2) atom. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to one Al(1) and one Si(1) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one Li(2), one Ga(1), and one Si(2) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one Li(1), one Al(1), and one Si(1) atom. is represented by the CIF card [CIF]
data_Li2AlGaSi2(H2O5)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.053
_cell_length_b   8.319
_cell_length_c   10.605
_cell_angle_alpha   90.058
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   445.735
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.243  0.687  0.186  1.0
  Li  Li1  1  0.743  0.313  0.814  1.0
  Li  Li2  1  0.741  0.179  0.312  1.0
  Li  Li3  1  0.241  0.821  0.688  1.0
  Al  Al4  1  0.248  0.081  0.156  1.0
  Al  Al5  1  0.748  0.919  0.844  1.0
  Ga  Ga6  1  0.745  0.582  0.345  1.0
  Ga  Ga7  1  0.245  0.418  0.655  1.0
  Si  Si8  1  0.749  0.875  0.143  1.0
  Si  Si9  1  0.249  0.125  0.857  1.0
  Si  Si10  1  0.248  0.370  0.354  1.0
  Si  Si11  1  0.748  0.630  0.646  1.0
  H  H12  1  0.656  0.330  0.038  1.0
  H  H13  1  0.156  0.670  0.962  1.0
  H  H14  1  0.154  0.830  0.465  1.0
  H  H15  1  0.654  0.170  0.535  1.0
  H  H16  1  0.884  0.460  0.019  1.0
  H  H17  1  0.384  0.540  0.981  1.0
  H  H18  1  0.385  0.961  0.482  1.0
  H  H19  1  0.885  0.039  0.518  1.0
  O  O20  1  0.220  0.585  0.017  1.0
  O  O21  1  0.720  0.415  0.983  1.0
  O  O22  1  0.720  0.083  0.482  1.0
  O  O23  1  0.220  0.917  0.518  1.0
  O  O24  1  0.867  0.722  0.223  1.0
  O  O25  1  0.367  0.278  0.777  1.0
  O  O26  1  0.364  0.220  0.269  1.0
  O  O27  1  0.864  0.780  0.731  1.0
  O  O28  1  0.391  0.541  0.312  1.0
  O  O29  1  0.891  0.459  0.688  1.0
  O  O30  1  0.910  0.039  0.186  1.0
  O  O31  1  0.410  0.961  0.814  1.0
  O  O32  1  0.818  0.671  0.499  1.0
  O  O33  1  0.318  0.329  0.501  1.0
  O  O34  1  0.305  0.160  0.006  1.0
  O  O35  1  0.805  0.840  0.994  1.0
  O  O36  1  0.929  0.388  0.324  1.0
  O  O37  1  0.429  0.612  0.676  1.0
  O  O38  1  0.433  0.899  0.176  1.0
  O  O39  1  0.933  0.101  0.824  1.0
[/CIF]
.
The material structure described by Li2GaAlSi2(H2O5)2 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Li sites. In the first Li site, Li(1) is bonded to one O(1), one O(10), one O(3), and one O(5) atom to form LiO4 tetrahedra that share  a cornercorner with one Al(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, and corners with two equivalent Si(1)O4 tetrahedra. In the second Li site, Li(2) is bonded to one O(2), one O(4), one O(6), and one O(9) atom to form LiO4 tetrahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra, corners with two equivalent Al(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. Ga(1) is bonded to one O(3), one O(5), one O(7), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Li(2)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra, corners with two equivalent Li(1)O4 tetrahedra, and corners with three equivalent Si(2)O4 tetrahedra. Al(1) is bonded to one O(10), one O(4), one O(6), and one O(8) atom to form AlO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, and corners with three equivalent Si(1)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(3), one O(6), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(2)O4 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with two equivalent Li(1)O4 tetrahedra, and corners with three equivalent Al(1)O4 tetrahedra. In the second Si site, Si(2) is bonded to one O(4), one O(5), one O(7), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent Li(2)O4 tetrahedra, and corners with three equivalent Ga(1)O4 tetrahedra. There are four inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one O(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one O(2) atom. In the third H site, H(3) is bonded in a single-bond geometry to one O(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one O(2) atom. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal non-coplanar geometry to one Li(1), one H(1), and one H(3) atom. In the second O site, O(2) is bonded in a distorted trigonal non-coplanar geometry to one Li(2), one H(2), and one H(4) atom. In the third O site, O(3) is bonded in a trigonal planar geometry to one Li(1), one Ga(1), and one Si(1) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Li(2), one Al(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Li(1), one Ga(1), and one Si(2) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Li(2), one Al(1), and one Si(1) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one Ga(1) and one Si(2) atom. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to one Al(1) and one Si(1) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one Li(2), one Ga(1), and one Si(2) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one Li(1), one Al(1), and one Si(1) atom. is represented by the CIF card [CIF]
data_Li2AlGaSi2(H2O5)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.053
_cell_length_b   8.319
_cell_length_c   10.605
_cell_angle_alpha   90.058
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   445.735
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.243  0.687  0.186  1.0
  Li  Li1  1  0.743  0.313  0.814  1.0
  Li  Li2  1  0.741  0.179  0.312  1.0
  Li  Li3  1  0.241  0.821  0.688  1.0
  Al  Al4  1  0.248  0.081  0.156  1.0
  Al  Al5  1  0.748  0.919  0.844  1.0
  Ga  Ga6  1  0.745  0.582  0.345  1.0
  Ga  Ga7  1  0.245  0.418  0.655  1.0
  Si  Si8  1  0.749  0.875  0.143  1.0
  Si  Si9  1  0.249  0.125  0.857  1.0
  Si  Si10  1  0.248  0.370  0.354  1.0
  Si  Si11  1  0.748  0.630  0.646  1.0
  H  H12  1  0.656  0.330  0.038  1.0
  H  H13  1  0.156  0.670  0.962  1.0
  H  H14  1  0.154  0.830  0.465  1.0
  H  H15  1  0.654  0.170  0.535  1.0
  H  H16  1  0.884  0.460  0.019  1.0
  H  H17  1  0.384  0.540  0.981  1.0
  H  H18  1  0.385  0.961  0.482  1.0
  H  H19  1  0.885  0.039  0.518  1.0
  O  O20  1  0.220  0.585  0.017  1.0
  O  O21  1  0.720  0.415  0.983  1.0
  O  O22  1  0.720  0.083  0.482  1.0
  O  O23  1  0.220  0.917  0.518  1.0
  O  O24  1  0.867  0.722  0.223  1.0
  O  O25  1  0.367  0.278  0.777  1.0
  O  O26  1  0.364  0.220  0.269  1.0
  O  O27  1  0.864  0.780  0.731  1.0
  O  O28  1  0.391  0.541  0.312  1.0
  O  O29  1  0.891  0.459  0.688  1.0
  O  O30  1  0.910  0.039  0.186  1.0
  O  O31  1  0.410  0.961  0.814  1.0
  O  O32  1  0.818  0.671  0.499  1.0
  O  O33  1  0.318  0.329  0.501  1.0
  O  O34  1  0.305  0.160  0.006  1.0
  O  O35  1  0.805  0.840  0.994  1.0
  O  O36  1  0.929  0.388  0.324  1.0
  O  O37  1  0.429  0.612  0.676  1.0
  O  O38  1  0.433  0.899  0.176  1.0
  O  O39  1  0.933  0.101  0.824  1.0
[/CIF]
.