The crystal structure described by SiC is Moissanite-6H-like structured and crystallizes in the hexagonal P6_3mc space group. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(4) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2) is bonded to one C(2) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(3) is bonded to one C(3) and three equivalent C(4) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(4) is bonded to one C(1) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. There are four inequivalent C sites. In the first C site, C(1) is bonded to one Si(4) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(2) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(3) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(4) is bonded to one Si(1) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.077
_cell_length_b   3.077
_cell_length_c   20.126
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   165.039
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.333  0.667  0.875  1.0
  Si  Si1  1  0.333  0.667  0.625  1.0
  Si  Si2  1  0.000  0.000  0.000  1.0
  Si  Si3  1  0.667  0.333  0.750  1.0
  Si  Si4  1  0.667  0.333  0.375  1.0
  Si  Si5  1  0.333  0.667  0.250  1.0
  Si  Si6  1  0.000  0.000  0.500  1.0
  Si  Si7  1  0.667  0.333  0.125  1.0
  C  C8  1  0.333  0.667  0.344  1.0
  C  C9  1  0.667  0.333  0.219  1.0
  C  C10  1  0.667  0.333  0.844  1.0
  C  C11  1  0.000  0.000  0.594  1.0
  C  C12  1  0.333  0.667  0.969  1.0
  C  C13  1  0.000  0.000  0.094  1.0
  C  C14  1  0.333  0.667  0.719  1.0
  C  C15  1  0.667  0.333  0.469  1.0
[/CIF]
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The crystal structure described by SiC is Moissanite-6H-like structured and crystallizes in the hexagonal P6_3mc space group. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(4) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2) is bonded to one C(2) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(3) is bonded to one C(3) and three equivalent C(4) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(4) is bonded to one C(1) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. There are four inequivalent C sites. In the first C site, C(1) is bonded to one Si(4) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(2) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(3) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(4) is bonded to one Si(1) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.077
_cell_length_b   3.077
_cell_length_c   20.126
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   165.039
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.333  0.667  0.875  1.0
  Si  Si1  1  0.333  0.667  0.625  1.0
  Si  Si2  1  0.000  0.000  0.000  1.0
  Si  Si3  1  0.667  0.333  0.750  1.0
  Si  Si4  1  0.667  0.333  0.375  1.0
  Si  Si5  1  0.333  0.667  0.250  1.0
  Si  Si6  1  0.000  0.000  0.500  1.0
  Si  Si7  1  0.667  0.333  0.125  1.0
  C  C8  1  0.333  0.667  0.344  1.0
  C  C9  1  0.667  0.333  0.219  1.0
  C  C10  1  0.667  0.333  0.844  1.0
  C  C11  1  0.000  0.000  0.594  1.0
  C  C12  1  0.333  0.667  0.969  1.0
  C  C13  1  0.000  0.000  0.094  1.0
  C  C14  1  0.333  0.667  0.719  1.0
  C  C15  1  0.667  0.333  0.469  1.0
[/CIF]
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