The material described by Th4GeSi is Khatyrkite-derived structured and crystallizes in the tetragonal I422 space group. Th(1) is bonded in a 4-coordinate geometry to two equivalent Ge(1) and two equivalent Si(1) atoms. Ge(1) is bonded in a 10-coordinate geometry to eight equivalent Th(1) and two equivalent Si(1) atoms. Si(1) is bonded in a 10-coordinate geometry to eight equivalent Th(1) and two equivalent Ge(1) atoms. is represented by the CIF card [CIF]
data_Th4SiGe
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.047
_cell_length_b   6.047
_cell_length_c   6.047
_cell_angle_alpha   104.450
_cell_angle_beta   104.450
_cell_angle_gamma   120.061
_symmetry_Int_Tables_number   1
_cell_volume   165.825
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Th  Th0  1  0.914  0.414  0.829  1.0
  Th  Th1  1  0.586  0.086  0.171  1.0
  Th  Th2  1  0.086  0.914  0.500  1.0
  Th  Th3  1  0.414  0.586  0.500  1.0
  Si  Si4  1  0.500  0.500  0.000  1.0
  Ge  Ge5  1  0.000  0.000  0.000  1.0
[/CIF]
.
The material described by Th4GeSi is Khatyrkite-derived structured and crystallizes in the tetragonal I422 space group. Th(1) is bonded in a 4-coordinate geometry to two equivalent Ge(1) and two equivalent Si(1) atoms. Ge(1) is bonded in a 10-coordinate geometry to eight equivalent Th(1) and two equivalent Si(1) atoms. Si(1) is bonded in a 10-coordinate geometry to eight equivalent Th(1) and two equivalent Ge(1) atoms. is represented by the CIF card [CIF]
data_Th4SiGe
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.047
_cell_length_b   6.047
_cell_length_c   6.047
_cell_angle_alpha   104.450
_cell_angle_beta   104.450
_cell_angle_gamma   120.061
_symmetry_Int_Tables_number   1
_cell_volume   165.825
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Th  Th0  1  0.914  0.414  0.829  1.0
  Th  Th1  1  0.586  0.086  0.171  1.0
  Th  Th2  1  0.086  0.914  0.500  1.0
  Th  Th3  1  0.414  0.586  0.500  1.0
  Si  Si4  1  0.500  0.500  0.000  1.0
  Ge  Ge5  1  0.000  0.000  0.000  1.0
[/CIF]
.