The material described by H3SiI is Silicon tetrafluoride-derived structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four 13598-42-0 molecules. Si(1) is bonded in a tetrahedral geometry to one H(1), one H(2), one H(3), and one I(1) atom. There are three inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one Si(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one Si(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Si(1) atom. I(1) is bonded in a single-bond geometry to one Si(1) atom. is represented by the CIF card [CIF]
data_SiH3I
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.725
_cell_length_b   8.575
_cell_length_c   10.641
_cell_angle_alpha   90.000
_cell_angle_beta   102.779
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   420.543
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.732  0.927  0.291  1.0
  Si  Si1  1  0.768  0.427  0.209  1.0
  Si  Si2  1  0.268  0.073  0.709  1.0
  Si  Si3  1  0.232  0.573  0.791  1.0
  H  H4  1  0.858  0.838  0.198  1.0
  H  H5  1  0.642  0.338  0.302  1.0
  H  H6  1  0.142  0.162  0.802  1.0
  H  H7  1  0.358  0.662  0.698  1.0
  H  H8  1  0.947  0.031  0.371  1.0
  H  H9  1  0.553  0.531  0.129  1.0
  H  H10  1  0.053  0.969  0.629  1.0
  H  H11  1  0.447  0.469  0.871  1.0
  H  H12  1  0.967  0.489  0.727  1.0
  H  H13  1  0.533  0.989  0.773  1.0
  H  H14  1  0.033  0.511  0.273  1.0
  H  H15  1  0.467  0.011  0.227  1.0
  I  I16  1  0.582  0.734  0.436  1.0
  I  I17  1  0.918  0.234  0.064  1.0
  I  I18  1  0.418  0.266  0.564  1.0
  I  I19  1  0.082  0.766  0.936  1.0
[/CIF]
.
The material described by H3SiI is Silicon tetrafluoride-derived structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four 13598-42-0 molecules. Si(1) is bonded in a tetrahedral geometry to one H(1), one H(2), one H(3), and one I(1) atom. There are three inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one Si(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one Si(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Si(1) atom. I(1) is bonded in a single-bond geometry to one Si(1) atom. is represented by the CIF card [CIF]
data_SiH3I
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.725
_cell_length_b   8.575
_cell_length_c   10.641
_cell_angle_alpha   90.000
_cell_angle_beta   102.779
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   420.543
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.732  0.927  0.291  1.0
  Si  Si1  1  0.768  0.427  0.209  1.0
  Si  Si2  1  0.268  0.073  0.709  1.0
  Si  Si3  1  0.232  0.573  0.791  1.0
  H  H4  1  0.858  0.838  0.198  1.0
  H  H5  1  0.642  0.338  0.302  1.0
  H  H6  1  0.142  0.162  0.802  1.0
  H  H7  1  0.358  0.662  0.698  1.0
  H  H8  1  0.947  0.031  0.371  1.0
  H  H9  1  0.553  0.531  0.129  1.0
  H  H10  1  0.053  0.969  0.629  1.0
  H  H11  1  0.447  0.469  0.871  1.0
  H  H12  1  0.967  0.489  0.727  1.0
  H  H13  1  0.533  0.989  0.773  1.0
  H  H14  1  0.033  0.511  0.273  1.0
  H  H15  1  0.467  0.011  0.227  1.0
  I  I16  1  0.582  0.734  0.436  1.0
  I  I17  1  0.918  0.234  0.064  1.0
  I  I18  1  0.418  0.266  0.564  1.0
  I  I19  1  0.082  0.766  0.936  1.0
[/CIF]
.