The compound described by InSiCN is Stannite-like structured and crystallizes in the orthorhombic Pmn2_1 space group. In(1) is bonded to one C(1) and three equivalent N(1) atoms to form InCN3 tetrahedra that share corners with six equivalent In(1)CN3 tetrahedra and corners with six equivalent Si(1)C3N tetrahedra. Si(1) is bonded to three equivalent C(1) and one N(1) atom to form SiC3N tetrahedra that share corners with six equivalent In(1)CN3 tetrahedra and corners with six equivalent Si(1)C3N tetrahedra. C(1) is bonded to one In(1) and three equivalent Si(1) atoms to form CInSi3 tetrahedra that share corners with six equivalent C(1)InSi3 tetrahedra and corners with six equivalent N(1)In3Si tetrahedra. N(1) is bonded to three equivalent In(1) and one Si(1) atom to form NIn3Si tetrahedra that share corners with six equivalent C(1)InSi3 tetrahedra and corners with six equivalent N(1)In3Si tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_InSiCN
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.264
_cell_length_b   5.350
_cell_length_c   5.847
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   102.110
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.500  0.504  0.395  1.0
  In  In1  1  0.000  0.004  0.605  1.0
  Si  Si2  1  0.500  0.994  0.083  1.0
  Si  Si3  1  0.000  0.494  0.917  1.0
  C  C4  1  0.500  0.351  0.042  1.0
  C  C5  1  0.000  0.851  0.958  1.0
  N  N6  1  0.500  0.914  0.378  1.0
  N  N7  1  0.000  0.414  0.622  1.0
[/CIF]
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The compound described by InSiCN is Stannite-like structured and crystallizes in the orthorhombic Pmn2_1 space group. In(1) is bonded to one C(1) and three equivalent N(1) atoms to form InCN3 tetrahedra that share corners with six equivalent In(1)CN3 tetrahedra and corners with six equivalent Si(1)C3N tetrahedra. Si(1) is bonded to three equivalent C(1) and one N(1) atom to form SiC3N tetrahedra that share corners with six equivalent In(1)CN3 tetrahedra and corners with six equivalent Si(1)C3N tetrahedra. C(1) is bonded to one In(1) and three equivalent Si(1) atoms to form CInSi3 tetrahedra that share corners with six equivalent C(1)InSi3 tetrahedra and corners with six equivalent N(1)In3Si tetrahedra. N(1) is bonded to three equivalent In(1) and one Si(1) atom to form NIn3Si tetrahedra that share corners with six equivalent C(1)InSi3 tetrahedra and corners with six equivalent N(1)In3Si tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_InSiCN
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.264
_cell_length_b   5.350
_cell_length_c   5.847
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   102.110
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.500  0.504  0.395  1.0
  In  In1  1  0.000  0.004  0.605  1.0
  Si  Si2  1  0.500  0.994  0.083  1.0
  Si  Si3  1  0.000  0.494  0.917  1.0
  C  C4  1  0.500  0.351  0.042  1.0
  C  C5  1  0.000  0.851  0.958  1.0
  N  N6  1  0.500  0.914  0.378  1.0
  N  N7  1  0.000  0.414  0.622  1.0
[/CIF]
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