The compound described by Si7CN10 crystallizes in the monoclinic Pc space group. There are seven inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(2), one N(3), and one N(6) atom to form a mixture of corner and edge-sharing SiN4 tetrahedra. In the second Si site, Si(2) is bonded to one N(2), one N(3), one N(4), and one N(6) atom to form a mixture of corner and edge-sharing SiN4 tetrahedra. In the third Si site, Si(3) is bonded to one C(1), one N(5), one N(7), and one N(8) atom to form corner-sharing SiCN3 tetrahedra. In the fourth Si site, Si(4) is bonded to one N(10), one N(2), one N(7), and one N(9) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(3)CN3 tetrahedra,  a cornercorner with one Si(1)N4 tetrahedra,  a cornercorner with one Si(2)N4 tetrahedra,  a cornercorner with one Si(6)N4 tetrahedra, corners with two equivalent Si(5)N4 tetrahedra, and corners with two equivalent Si(7)N4 tetrahedra. In the fifth Si site, Si(5) is bonded to one N(1), one N(7), one N(8), and one N(9) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(1)N4 tetrahedra,  a cornercorner with one Si(6)N4 tetrahedra,  a cornercorner with one Si(7)N4 tetrahedra, corners with two equivalent Si(3)CN3 tetrahedra, and corners with two equivalent Si(4)N4 tetrahedra. In the sixth Si site, Si(6) is bonded to one N(10), one N(3), one N(5), and one N(8) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(1)N4 tetrahedra,  a cornercorner with one Si(2)N4 tetrahedra,  a cornercorner with one Si(4)N4 tetrahedra,  a cornercorner with one Si(5)N4 tetrahedra, corners with two equivalent Si(3)CN3 tetrahedra, and corners with two equivalent Si(7)N4 tetrahedra. In the seventh Si site, Si(7) is bonded to one N(10), one N(5), one N(6), and one N(9) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(3)CN3 tetrahedra,  a cornercorner with one Si(1)N4 tetrahedra,  a cornercorner with one Si(2)N4 tetrahedra,  a cornercorner with one Si(5)N4 tetrahedra, corners with two equivalent Si(4)N4 tetrahedra, and corners with two equivalent Si(6)N4 tetrahedra. C(1) is bonded in a linear geometry to one Si(3) and one N(4) atom. There are ten inequivalent N sites. In the first N site, N(9) is bonded in a trigonal planar geometry to one Si(4), one Si(5), and one Si(7) atom. In the second N site, N(10) is bonded in a trigonal planar geometry to one Si(4), one Si(6), and one Si(7) atom. In the third N site, N(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(5) atom. In the fourth N site, N(2) is bonded in a distorted T-shaped geometry to one Si(1), one Si(2), and one Si(4) atom. In the fifth N site, N(3) is bonded in a distorted T-shaped geometry to one Si(1), one Si(2), and one Si(6) atom. In the sixth N site, N(4) is bonded in a bent 150 degrees geometry to one Si(2) and one C(1) atom. In the seventh N site, N(5) is bonded in a trigonal planar geometry to one Si(3), one Si(6), and one Si(7) atom. In the eighth N site, N(6) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(7) atom. In the ninth N site, N(7) is bonded in a trigonal planar geometry to one Si(3), one Si(4), and one Si(5) atom. In the tenth N site, N(8) is bonded in a trigonal planar geometry to one Si(3), one Si(5), and one Si(6) atom. is represented by the CIF card [CIF]
data_Si7CN10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.107
_cell_length_b   6.959
_cell_length_c   9.886
_cell_angle_alpha   90.000
_cell_angle_beta   106.863
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   467.955
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.552  0.975  0.826  1.0
  Si  Si1  1  0.552  0.025  0.326  1.0
  Si  Si2  1  0.408  0.975  0.022  1.0
  Si  Si3  1  0.408  0.025  0.522  1.0
  Si  Si4  1  0.059  0.484  0.098  1.0
  Si  Si5  1  0.059  0.516  0.598  1.0
  Si  Si6  1  0.639  0.368  0.005  1.0
  Si  Si7  1  0.639  0.632  0.505  1.0
  Si  Si8  1  0.824  0.632  0.813  1.0
  Si  Si9  1  0.824  0.368  0.313  1.0
  Si  Si10  1  0.281  0.606  0.895  1.0
  Si  Si11  1  0.281  0.394  0.395  1.0
  Si  Si12  1  0.468  0.382  0.703  1.0
  Si  Si13  1  0.468  0.618  0.203  1.0
  C  C14  1  0.125  0.760  0.547  1.0
  C  C15  1  0.125  0.240  0.047  1.0
  N  N16  1  0.734  0.849  0.805  1.0
  N  N17  1  0.734  0.151  0.305  1.0
  N  N18  1  0.564  0.130  0.973  1.0
  N  N19  1  0.564  0.870  0.473  1.0
  N  N20  1  0.362  0.835  0.874  1.0
  N  N21  1  0.362  0.165  0.374  1.0
  N  N22  1  0.185  0.097  0.014  1.0
  N  N23  1  0.185  0.903  0.514  1.0
  N  N24  1  0.253  0.465  0.744  1.0
  N  N25  1  0.253  0.535  0.244  1.0
  N  N26  1  0.460  0.134  0.681  1.0
  N  N27  1  0.460  0.866  0.181  1.0
  N  N28  1  0.850  0.429  0.141  1.0
  N  N29  1  0.850  0.571  0.641  1.0
  N  N30  1  0.057  0.601  0.942  1.0
  N  N31  1  0.057  0.399  0.442  1.0
  N  N32  1  0.669  0.446  0.844  1.0
  N  N33  1  0.669  0.554  0.344  1.0
  N  N34  1  0.453  0.504  0.043  1.0
  N  N35  1  0.453  0.496  0.543  1.0
[/CIF]
.
The compound described by Si7CN10 crystallizes in the monoclinic Pc space group. There are seven inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(2), one N(3), and one N(6) atom to form a mixture of corner and edge-sharing SiN4 tetrahedra. In the second Si site, Si(2) is bonded to one N(2), one N(3), one N(4), and one N(6) atom to form a mixture of corner and edge-sharing SiN4 tetrahedra. In the third Si site, Si(3) is bonded to one C(1), one N(5), one N(7), and one N(8) atom to form corner-sharing SiCN3 tetrahedra. In the fourth Si site, Si(4) is bonded to one N(10), one N(2), one N(7), and one N(9) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(3)CN3 tetrahedra,  a cornercorner with one Si(1)N4 tetrahedra,  a cornercorner with one Si(2)N4 tetrahedra,  a cornercorner with one Si(6)N4 tetrahedra, corners with two equivalent Si(5)N4 tetrahedra, and corners with two equivalent Si(7)N4 tetrahedra. In the fifth Si site, Si(5) is bonded to one N(1), one N(7), one N(8), and one N(9) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(1)N4 tetrahedra,  a cornercorner with one Si(6)N4 tetrahedra,  a cornercorner with one Si(7)N4 tetrahedra, corners with two equivalent Si(3)CN3 tetrahedra, and corners with two equivalent Si(4)N4 tetrahedra. In the sixth Si site, Si(6) is bonded to one N(10), one N(3), one N(5), and one N(8) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(1)N4 tetrahedra,  a cornercorner with one Si(2)N4 tetrahedra,  a cornercorner with one Si(4)N4 tetrahedra,  a cornercorner with one Si(5)N4 tetrahedra, corners with two equivalent Si(3)CN3 tetrahedra, and corners with two equivalent Si(7)N4 tetrahedra. In the seventh Si site, Si(7) is bonded to one N(10), one N(5), one N(6), and one N(9) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(3)CN3 tetrahedra,  a cornercorner with one Si(1)N4 tetrahedra,  a cornercorner with one Si(2)N4 tetrahedra,  a cornercorner with one Si(5)N4 tetrahedra, corners with two equivalent Si(4)N4 tetrahedra, and corners with two equivalent Si(6)N4 tetrahedra. C(1) is bonded in a linear geometry to one Si(3) and one N(4) atom. There are ten inequivalent N sites. In the first N site, N(9) is bonded in a trigonal planar geometry to one Si(4), one Si(5), and one Si(7) atom. In the second N site, N(10) is bonded in a trigonal planar geometry to one Si(4), one Si(6), and one Si(7) atom. In the third N site, N(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(5) atom. In the fourth N site, N(2) is bonded in a distorted T-shaped geometry to one Si(1), one Si(2), and one Si(4) atom. In the fifth N site, N(3) is bonded in a distorted T-shaped geometry to one Si(1), one Si(2), and one Si(6) atom. In the sixth N site, N(4) is bonded in a bent 150 degrees geometry to one Si(2) and one C(1) atom. In the seventh N site, N(5) is bonded in a trigonal planar geometry to one Si(3), one Si(6), and one Si(7) atom. In the eighth N site, N(6) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(7) atom. In the ninth N site, N(7) is bonded in a trigonal planar geometry to one Si(3), one Si(4), and one Si(5) atom. In the tenth N site, N(8) is bonded in a trigonal planar geometry to one Si(3), one Si(5), and one Si(6) atom. is represented by the CIF card [CIF]
data_Si7CN10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.107
_cell_length_b   6.959
_cell_length_c   9.886
_cell_angle_alpha   90.000
_cell_angle_beta   106.863
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   467.955
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.552  0.975  0.826  1.0
  Si  Si1  1  0.552  0.025  0.326  1.0
  Si  Si2  1  0.408  0.975  0.022  1.0
  Si  Si3  1  0.408  0.025  0.522  1.0
  Si  Si4  1  0.059  0.484  0.098  1.0
  Si  Si5  1  0.059  0.516  0.598  1.0
  Si  Si6  1  0.639  0.368  0.005  1.0
  Si  Si7  1  0.639  0.632  0.505  1.0
  Si  Si8  1  0.824  0.632  0.813  1.0
  Si  Si9  1  0.824  0.368  0.313  1.0
  Si  Si10  1  0.281  0.606  0.895  1.0
  Si  Si11  1  0.281  0.394  0.395  1.0
  Si  Si12  1  0.468  0.382  0.703  1.0
  Si  Si13  1  0.468  0.618  0.203  1.0
  C  C14  1  0.125  0.760  0.547  1.0
  C  C15  1  0.125  0.240  0.047  1.0
  N  N16  1  0.734  0.849  0.805  1.0
  N  N17  1  0.734  0.151  0.305  1.0
  N  N18  1  0.564  0.130  0.973  1.0
  N  N19  1  0.564  0.870  0.473  1.0
  N  N20  1  0.362  0.835  0.874  1.0
  N  N21  1  0.362  0.165  0.374  1.0
  N  N22  1  0.185  0.097  0.014  1.0
  N  N23  1  0.185  0.903  0.514  1.0
  N  N24  1  0.253  0.465  0.744  1.0
  N  N25  1  0.253  0.535  0.244  1.0
  N  N26  1  0.460  0.134  0.681  1.0
  N  N27  1  0.460  0.866  0.181  1.0
  N  N28  1  0.850  0.429  0.141  1.0
  N  N29  1  0.850  0.571  0.641  1.0
  N  N30  1  0.057  0.601  0.942  1.0
  N  N31  1  0.057  0.399  0.442  1.0
  N  N32  1  0.669  0.446  0.844  1.0
  N  N33  1  0.669  0.554  0.344  1.0
  N  N34  1  0.453  0.504  0.043  1.0
  N  N35  1  0.453  0.496  0.543  1.0
[/CIF]
.