The material structure described by Ba2Ga2S5 crystallizes in the monoclinic C2/c space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 8-coordinate geometry to one S(1), one S(2), two equivalent S(3), two equivalent S(4), and two equivalent S(5) atoms. In the second Ba site, Ba(2) is bonded in a 7-coordinate geometry to one S(2), one S(5), one S(6), two equivalent S(3), and two equivalent S(4) atoms. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(2), one S(3), one S(5), and one S(6) atom to form corner-sharing GaS4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(1), one S(2), one S(4), and one S(5) atom to form corner-sharing GaS4 tetrahedra. There are six inequivalent S sites. In the first S site, S(1) is bonded in a distorted square co-planar geometry to two equivalent Ba(1) and two equivalent Ga(2) atoms. In the second S site, S(2) is bonded in a distorted see-saw-like geometry to one Ba(1), one Ba(2), one Ga(1), and one Ga(2) atom. In the third S site, S(3) is bonded in a 5-coordinate geometry to two equivalent Ba(1), two equivalent Ba(2), and one Ga(1) atom. In the fourth S site, S(4) is bonded to two equivalent Ba(1), two equivalent Ba(2), and one Ga(2) atom to form distorted SBa4Ga trigonal bipyramids that share corners with five equivalent S(5)Ba3Ga2 trigonal bipyramids,  an edgeedge with one S(5)Ba3Ga2 trigonal bipyramid, and edges with two equivalent S(4)Ba4Ga trigonal bipyramids. In the fifth S site, S(5) is bonded to one Ba(2), two equivalent Ba(1), one Ga(1), and one Ga(2) atom to form distorted SBa3Ga2 trigonal bipyramids that share corners with five equivalent S(4)Ba4Ga trigonal bipyramids,  an edgeedge with one S(5)Ba3Ga2 trigonal bipyramid, and  an edgeedge with one S(4)Ba4Ga trigonal bipyramid. In the sixth S site, S(6) is bonded in a 4-coordinate geometry to two equivalent Ba(2) and two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_Ba2Ga2S5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.750
_cell_length_b   10.750
_cell_length_c   8.632
_cell_angle_alpha   78.603
_cell_angle_beta   78.603
_cell_angle_gamma   87.485
_symmetry_Int_Tables_number   1
_cell_volume   958.563
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.015  0.282  0.610  1.0
  Ba  Ba1  1  0.718  0.985  0.890  1.0
  Ba  Ba2  1  0.985  0.718  0.390  1.0
  Ba  Ba3  1  0.282  0.015  0.110  1.0
  Ba  Ba4  1  0.429  0.271  0.608  1.0
  Ba  Ba5  1  0.729  0.571  0.892  1.0
  Ba  Ba6  1  0.571  0.729  0.392  1.0
  Ba  Ba7  1  0.271  0.429  0.108  1.0
  Ga  Ga8  1  0.232  0.624  0.619  1.0
  Ga  Ga9  1  0.376  0.768  0.881  1.0
  Ga  Ga10  1  0.768  0.376  0.381  1.0
  Ga  Ga11  1  0.624  0.232  0.119  1.0
  Ga  Ga12  1  0.228  0.979  0.586  1.0
  Ga  Ga13  1  0.021  0.772  0.914  1.0
  Ga  Ga14  1  0.772  0.021  0.414  1.0
  Ga  Ga15  1  0.979  0.228  0.086  1.0
  S  S16  1  0.968  0.032  0.250  1.0
  S  S17  1  0.032  0.968  0.750  1.0
  S  S18  1  0.034  0.612  0.771  1.0
  S  S19  1  0.388  0.966  0.729  1.0
  S  S20  1  0.966  0.388  0.229  1.0
  S  S21  1  0.612  0.034  0.271  1.0
  S  S22  1  0.239  0.484  0.460  1.0
  S  S23  1  0.516  0.761  0.040  1.0
  S  S24  1  0.761  0.516  0.540  1.0
  S  S25  1  0.484  0.239  0.960  1.0
  S  S26  1  0.836  0.747  0.092  1.0
  S  S27  1  0.253  0.164  0.408  1.0
  S  S28  1  0.164  0.253  0.908  1.0
  S  S29  1  0.747  0.836  0.592  1.0
  S  S30  1  0.262  0.817  0.445  1.0
  S  S31  1  0.183  0.738  0.055  1.0
  S  S32  1  0.401  0.599  0.750  1.0
  S  S33  1  0.599  0.401  0.250  1.0
  S  S34  1  0.817  0.262  0.945  1.0
  S  S35  1  0.738  0.183  0.555  1.0
[/CIF]
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The material structure described by Ba2Ga2S5 crystallizes in the monoclinic C2/c space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 8-coordinate geometry to one S(1), one S(2), two equivalent S(3), two equivalent S(4), and two equivalent S(5) atoms. In the second Ba site, Ba(2) is bonded in a 7-coordinate geometry to one S(2), one S(5), one S(6), two equivalent S(3), and two equivalent S(4) atoms. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(2), one S(3), one S(5), and one S(6) atom to form corner-sharing GaS4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(1), one S(2), one S(4), and one S(5) atom to form corner-sharing GaS4 tetrahedra. There are six inequivalent S sites. In the first S site, S(1) is bonded in a distorted square co-planar geometry to two equivalent Ba(1) and two equivalent Ga(2) atoms. In the second S site, S(2) is bonded in a distorted see-saw-like geometry to one Ba(1), one Ba(2), one Ga(1), and one Ga(2) atom. In the third S site, S(3) is bonded in a 5-coordinate geometry to two equivalent Ba(1), two equivalent Ba(2), and one Ga(1) atom. In the fourth S site, S(4) is bonded to two equivalent Ba(1), two equivalent Ba(2), and one Ga(2) atom to form distorted SBa4Ga trigonal bipyramids that share corners with five equivalent S(5)Ba3Ga2 trigonal bipyramids,  an edgeedge with one S(5)Ba3Ga2 trigonal bipyramid, and edges with two equivalent S(4)Ba4Ga trigonal bipyramids. In the fifth S site, S(5) is bonded to one Ba(2), two equivalent Ba(1), one Ga(1), and one Ga(2) atom to form distorted SBa3Ga2 trigonal bipyramids that share corners with five equivalent S(4)Ba4Ga trigonal bipyramids,  an edgeedge with one S(5)Ba3Ga2 trigonal bipyramid, and  an edgeedge with one S(4)Ba4Ga trigonal bipyramid. In the sixth S site, S(6) is bonded in a 4-coordinate geometry to two equivalent Ba(2) and two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_Ba2Ga2S5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.750
_cell_length_b   10.750
_cell_length_c   8.632
_cell_angle_alpha   78.603
_cell_angle_beta   78.603
_cell_angle_gamma   87.485
_symmetry_Int_Tables_number   1
_cell_volume   958.563
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.015  0.282  0.610  1.0
  Ba  Ba1  1  0.718  0.985  0.890  1.0
  Ba  Ba2  1  0.985  0.718  0.390  1.0
  Ba  Ba3  1  0.282  0.015  0.110  1.0
  Ba  Ba4  1  0.429  0.271  0.608  1.0
  Ba  Ba5  1  0.729  0.571  0.892  1.0
  Ba  Ba6  1  0.571  0.729  0.392  1.0
  Ba  Ba7  1  0.271  0.429  0.108  1.0
  Ga  Ga8  1  0.232  0.624  0.619  1.0
  Ga  Ga9  1  0.376  0.768  0.881  1.0
  Ga  Ga10  1  0.768  0.376  0.381  1.0
  Ga  Ga11  1  0.624  0.232  0.119  1.0
  Ga  Ga12  1  0.228  0.979  0.586  1.0
  Ga  Ga13  1  0.021  0.772  0.914  1.0
  Ga  Ga14  1  0.772  0.021  0.414  1.0
  Ga  Ga15  1  0.979  0.228  0.086  1.0
  S  S16  1  0.968  0.032  0.250  1.0
  S  S17  1  0.032  0.968  0.750  1.0
  S  S18  1  0.034  0.612  0.771  1.0
  S  S19  1  0.388  0.966  0.729  1.0
  S  S20  1  0.966  0.388  0.229  1.0
  S  S21  1  0.612  0.034  0.271  1.0
  S  S22  1  0.239  0.484  0.460  1.0
  S  S23  1  0.516  0.761  0.040  1.0
  S  S24  1  0.761  0.516  0.540  1.0
  S  S25  1  0.484  0.239  0.960  1.0
  S  S26  1  0.836  0.747  0.092  1.0
  S  S27  1  0.253  0.164  0.408  1.0
  S  S28  1  0.164  0.253  0.908  1.0
  S  S29  1  0.747  0.836  0.592  1.0
  S  S30  1  0.262  0.817  0.445  1.0
  S  S31  1  0.183  0.738  0.055  1.0
  S  S32  1  0.401  0.599  0.750  1.0
  S  S33  1  0.599  0.401  0.250  1.0
  S  S34  1  0.817  0.262  0.945  1.0
  S  S35  1  0.738  0.183  0.555  1.0
[/CIF]
.