The material described by La3Ga5SiO14 is Esseneite-like structured and crystallizes in the trigonal P3 space group. La(1) is bonded in a 8-coordinate geometry to one O(1), one O(2), one O(5), one O(6), two equivalent O(3), and two equivalent O(4) atoms. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(3), one O(4), one O(5), and one O(6) atom to form distorted GaO4 tetrahedra that share corners with two equivalent Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O4 tetrahedra, and  a cornercorner with one Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 66-67°. In the second Ga site, Ga(2) is bonded to three equivalent O(5) and three equivalent O(6) atoms to form corner-sharing GaO6 octahedra. In the third Ga site, Ga(3) is bonded to one O(2) and three equivalent O(3) atoms to form corner-sharing GaO4 tetrahedra. Si(1) is bonded to one O(1) and three equivalent O(4) atoms to form SiO4 tetrahedra that share corners with three equivalent Ga(1)O4 tetrahedra. There are six inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to three equivalent La(1) and one Si(1) atom. In the second O site, O(2) is bonded in a tetrahedral geometry to three equivalent La(1) and one Ga(3) atom. In the third O site, O(3) is bonded in a 4-coordinate geometry to two equivalent La(1), one Ga(1), and one Ga(3) atom. In the fourth O site, O(4) is bonded in a 2-coordinate geometry to two equivalent La(1), one Ga(1), and one Si(1) atom. In the fifth O site, O(5) is bonded in a 3-coordinate geometry to one La(1), one Ga(1), and one Ga(2) atom. In the sixth O site, O(6) is bonded in a 3-coordinate geometry to one La(1), one Ga(1), and one Ga(2) atom. is represented by the CIF file [CIF]
data_La3Ga5SiO14
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.149
_cell_length_b   8.263
_cell_length_c   8.263
_cell_angle_alpha   120.001
_cell_angle_beta   90.000
_cell_angle_gamma   90.001
_symmetry_Int_Tables_number   1
_cell_volume   304.437
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  La  La0  1  0.005  0.411  0.420  1.0
  La  La1  1  0.005  0.580  0.991  1.0
  La  La2  1  0.005  0.009  0.589  1.0
  Ga  Ga3  1  0.495  0.764  0.762  1.0
  Ga  Ga4  1  0.495  0.238  0.002  1.0
  Ga  Ga5  1  0.495  0.998  0.236  1.0
  Ga  Ga6  1  0.998  1.000  1.000  1.0
  Ga  Ga7  1  0.474  0.333  0.667  1.0
  Si  Si8  1  0.543  0.667  0.333  1.0
  O  O9  1  0.226  0.667  0.333  1.0
  O  O10  1  0.827  0.333  0.667  1.0
  O  O11  1  0.304  0.145  0.459  1.0
  O  O12  1  0.304  0.541  0.686  1.0
  O  O13  1  0.304  0.314  0.855  1.0
  O  O14  1  0.677  0.839  0.313  1.0
  O  O15  1  0.677  0.687  0.525  1.0
  O  O16  1  0.677  0.475  0.161  1.0
  O  O17  1  0.763  0.139  0.225  1.0
  O  O18  1  0.763  0.775  0.914  1.0
  O  O19  1  0.763  0.086  0.861  1.0
  O  O20  1  0.235  0.854  0.076  1.0
  O  O21  1  0.235  0.924  0.778  1.0
  O  O22  1  0.235  0.222  0.146  1.0
[/CIF]
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The material described by La3Ga5SiO14 is Esseneite-like structured and crystallizes in the trigonal P3 space group. La(1) is bonded in a 8-coordinate geometry to one O(1), one O(2), one O(5), one O(6), two equivalent O(3), and two equivalent O(4) atoms. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(3), one O(4), one O(5), and one O(6) atom to form distorted GaO4 tetrahedra that share corners with two equivalent Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O4 tetrahedra, and  a cornercorner with one Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 66-67°. In the second Ga site, Ga(2) is bonded to three equivalent O(5) and three equivalent O(6) atoms to form corner-sharing GaO6 octahedra. In the third Ga site, Ga(3) is bonded to one O(2) and three equivalent O(3) atoms to form corner-sharing GaO4 tetrahedra. Si(1) is bonded to one O(1) and three equivalent O(4) atoms to form SiO4 tetrahedra that share corners with three equivalent Ga(1)O4 tetrahedra. There are six inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to three equivalent La(1) and one Si(1) atom. In the second O site, O(2) is bonded in a tetrahedral geometry to three equivalent La(1) and one Ga(3) atom. In the third O site, O(3) is bonded in a 4-coordinate geometry to two equivalent La(1), one Ga(1), and one Ga(3) atom. In the fourth O site, O(4) is bonded in a 2-coordinate geometry to two equivalent La(1), one Ga(1), and one Si(1) atom. In the fifth O site, O(5) is bonded in a 3-coordinate geometry to one La(1), one Ga(1), and one Ga(2) atom. In the sixth O site, O(6) is bonded in a 3-coordinate geometry to one La(1), one Ga(1), and one Ga(2) atom. is represented by the CIF file [CIF]
data_La3Ga5SiO14
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.149
_cell_length_b   8.263
_cell_length_c   8.263
_cell_angle_alpha   120.001
_cell_angle_beta   90.000
_cell_angle_gamma   90.001
_symmetry_Int_Tables_number   1
_cell_volume   304.437
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  La  La0  1  0.005  0.411  0.420  1.0
  La  La1  1  0.005  0.580  0.991  1.0
  La  La2  1  0.005  0.009  0.589  1.0
  Ga  Ga3  1  0.495  0.764  0.762  1.0
  Ga  Ga4  1  0.495  0.238  0.002  1.0
  Ga  Ga5  1  0.495  0.998  0.236  1.0
  Ga  Ga6  1  0.998  1.000  1.000  1.0
  Ga  Ga7  1  0.474  0.333  0.667  1.0
  Si  Si8  1  0.543  0.667  0.333  1.0
  O  O9  1  0.226  0.667  0.333  1.0
  O  O10  1  0.827  0.333  0.667  1.0
  O  O11  1  0.304  0.145  0.459  1.0
  O  O12  1  0.304  0.541  0.686  1.0
  O  O13  1  0.304  0.314  0.855  1.0
  O  O14  1  0.677  0.839  0.313  1.0
  O  O15  1  0.677  0.687  0.525  1.0
  O  O16  1  0.677  0.475  0.161  1.0
  O  O17  1  0.763  0.139  0.225  1.0
  O  O18  1  0.763  0.775  0.914  1.0
  O  O19  1  0.763  0.086  0.861  1.0
  O  O20  1  0.235  0.854  0.076  1.0
  O  O21  1  0.235  0.924  0.778  1.0
  O  O22  1  0.235  0.222  0.146  1.0
[/CIF]
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