The structure described by Ga(NO3)4NO2 is Indium-derived structured and crystallizes in the tetragonal I-4 space group. The structure is zero-dimensional and consists of two hydroxylamine, n-hydroxy- molecules and two Ga(NO3)4 clusters. In each Ga(NO3)4 cluster, Ga(1) is bonded in a tetrahedral geometry to four equivalent O(3) atoms. N(1) is bonded in a trigonal planar geometry to one O(1), one O(2), and one O(3) atom. There are three inequivalent O sites. In the first O site, O(1) is bonded in a single-bond geometry to one N(1) atom. In the second O site, O(2) is bonded in a single-bond geometry to one N(1) atom. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one Ga(1) and one N(1) atom. is represented by the CIF card [CIF]
data_GaN5O14
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.420
_cell_length_b   7.420
_cell_length_c   7.420
_cell_angle_alpha   100.265
_cell_angle_beta   100.265
_cell_angle_gamma   130.060
_symmetry_Int_Tables_number   1
_cell_volume   283.450
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.000  0.000  0.000  1.0
  N  N1  1  0.558  0.564  0.690  1.0
  N  N2  1  0.436  0.127  0.995  1.0
  N  N3  1  0.873  0.868  0.310  1.0
  N  N4  1  0.132  0.442  0.005  1.0
  N  N5  1  0.250  0.750  0.500  1.0
  O  O6  1  0.092  0.342  0.832  1.0
  O  O7  1  0.560  0.105  0.921  1.0
  O  O8  1  0.895  0.816  0.455  1.0
  O  O9  1  0.012  0.882  0.205  1.0
  O  O10  1  0.739  0.908  0.249  1.0
  O  O11  1  0.184  0.639  0.079  1.0
  O  O12  1  0.118  0.323  0.130  1.0
  O  O13  1  0.677  0.807  0.795  1.0
  O  O14  1  0.361  0.440  0.545  1.0
  O  O15  1  0.068  0.568  0.500  1.0
  O  O16  1  0.193  0.988  0.870  1.0
  O  O17  1  0.658  0.490  0.751  1.0
  O  O18  1  0.510  0.261  0.168  1.0
  O  O19  1  0.432  0.932  0.500  1.0
[/CIF]
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The structure described by Ga(NO3)4NO2 is Indium-derived structured and crystallizes in the tetragonal I-4 space group. The structure is zero-dimensional and consists of two hydroxylamine, n-hydroxy- molecules and two Ga(NO3)4 clusters. In each Ga(NO3)4 cluster, Ga(1) is bonded in a tetrahedral geometry to four equivalent O(3) atoms. N(1) is bonded in a trigonal planar geometry to one O(1), one O(2), and one O(3) atom. There are three inequivalent O sites. In the first O site, O(1) is bonded in a single-bond geometry to one N(1) atom. In the second O site, O(2) is bonded in a single-bond geometry to one N(1) atom. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one Ga(1) and one N(1) atom. is represented by the CIF card [CIF]
data_GaN5O14
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.420
_cell_length_b   7.420
_cell_length_c   7.420
_cell_angle_alpha   100.265
_cell_angle_beta   100.265
_cell_angle_gamma   130.060
_symmetry_Int_Tables_number   1
_cell_volume   283.450
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.000  0.000  0.000  1.0
  N  N1  1  0.558  0.564  0.690  1.0
  N  N2  1  0.436  0.127  0.995  1.0
  N  N3  1  0.873  0.868  0.310  1.0
  N  N4  1  0.132  0.442  0.005  1.0
  N  N5  1  0.250  0.750  0.500  1.0
  O  O6  1  0.092  0.342  0.832  1.0
  O  O7  1  0.560  0.105  0.921  1.0
  O  O8  1  0.895  0.816  0.455  1.0
  O  O9  1  0.012  0.882  0.205  1.0
  O  O10  1  0.739  0.908  0.249  1.0
  O  O11  1  0.184  0.639  0.079  1.0
  O  O12  1  0.118  0.323  0.130  1.0
  O  O13  1  0.677  0.807  0.795  1.0
  O  O14  1  0.361  0.440  0.545  1.0
  O  O15  1  0.068  0.568  0.500  1.0
  O  O16  1  0.193  0.988  0.870  1.0
  O  O17  1  0.658  0.490  0.751  1.0
  O  O18  1  0.510  0.261  0.168  1.0
  O  O19  1  0.432  0.932  0.500  1.0
[/CIF]
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