The crystal structure described by AgGaTeSe is Stannite-like structured and crystallizes in the orthorhombic I2_12_12_1 space group. Ag(1) is bonded to two equivalent Te(1) and two equivalent Se(1) atoms to form AgTe2Se2 tetrahedra that share corners with four equivalent Ag(1)Te2Se2 tetrahedra and corners with eight equivalent Ga(1)Te2Se2 tetrahedra. Ga(1) is bonded to two equivalent Te(1) and two equivalent Se(1) atoms to form GaTe2Se2 tetrahedra that share corners with four equivalent Ga(1)Te2Se2 tetrahedra and corners with eight equivalent Ag(1)Te2Se2 tetrahedra. Te(1) is bonded to two equivalent Ag(1) and two equivalent Ga(1) atoms to form TeGa2Ag2 tetrahedra that share corners with four equivalent Te(1)Ga2Ag2 tetrahedra and corners with eight equivalent Se(1)Ga2Ag2 tetrahedra. Se(1) is bonded to two equivalent Ag(1) and two equivalent Ga(1) atoms to form SeGa2Ag2 tetrahedra that share corners with four equivalent Se(1)Ga2Ag2 tetrahedra and corners with eight equivalent Te(1)Ga2Ag2 tetrahedra. is represented by the CIF card [CIF]
data_GaAgTeSe
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.343
_cell_length_b   7.343
_cell_length_c   7.343
_cell_angle_alpha   130.028
_cell_angle_beta   129.257
_cell_angle_gamma   73.981
_symmetry_Int_Tables_number   1
_cell_volume   228.974
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.134  0.884  0.250  1.0
  Ga  Ga1  1  0.366  0.616  0.750  1.0
  Ag  Ag2  1  0.630  0.380  0.250  1.0
  Ag  Ag3  1  0.870  0.120  0.750  1.0
  Te  Te4  1  0.250  0.518  0.268  1.0
  Te  Te5  1  0.750  0.982  0.232  1.0
  Se  Se6  1  0.469  0.250  0.719  1.0
  Se  Se7  1  0.031  0.750  0.781  1.0
[/CIF]
.
The crystal structure described by AgGaTeSe is Stannite-like structured and crystallizes in the orthorhombic I2_12_12_1 space group. Ag(1) is bonded to two equivalent Te(1) and two equivalent Se(1) atoms to form AgTe2Se2 tetrahedra that share corners with four equivalent Ag(1)Te2Se2 tetrahedra and corners with eight equivalent Ga(1)Te2Se2 tetrahedra. Ga(1) is bonded to two equivalent Te(1) and two equivalent Se(1) atoms to form GaTe2Se2 tetrahedra that share corners with four equivalent Ga(1)Te2Se2 tetrahedra and corners with eight equivalent Ag(1)Te2Se2 tetrahedra. Te(1) is bonded to two equivalent Ag(1) and two equivalent Ga(1) atoms to form TeGa2Ag2 tetrahedra that share corners with four equivalent Te(1)Ga2Ag2 tetrahedra and corners with eight equivalent Se(1)Ga2Ag2 tetrahedra. Se(1) is bonded to two equivalent Ag(1) and two equivalent Ga(1) atoms to form SeGa2Ag2 tetrahedra that share corners with four equivalent Se(1)Ga2Ag2 tetrahedra and corners with eight equivalent Te(1)Ga2Ag2 tetrahedra. is represented by the CIF card [CIF]
data_GaAgTeSe
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.343
_cell_length_b   7.343
_cell_length_c   7.343
_cell_angle_alpha   130.028
_cell_angle_beta   129.257
_cell_angle_gamma   73.981
_symmetry_Int_Tables_number   1
_cell_volume   228.974
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.134  0.884  0.250  1.0
  Ga  Ga1  1  0.366  0.616  0.750  1.0
  Ag  Ag2  1  0.630  0.380  0.250  1.0
  Ag  Ag3  1  0.870  0.120  0.750  1.0
  Te  Te4  1  0.250  0.518  0.268  1.0
  Te  Te5  1  0.750  0.982  0.232  1.0
  Se  Se6  1  0.469  0.250  0.719  1.0
  Se  Se7  1  0.031  0.750  0.781  1.0
[/CIF]
.