The material structure described by GaC3PH11Cl is Silicon tetrafluoride-derived structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of two GaC3PH11Cl clusters. Ga(1) is bonded to one P(1), one H(3), one H(4), and one Cl(1) atom to form distorted GaPH2Cl tetrahedra that share  a cornercorner with one C(1)PH3 tetrahedra,  a cornercorner with one C(2)PH3 tetrahedra, and  a cornercorner with one C(3)PH3 tetrahedra. There are three inequivalent C sites. In the first C site, C(1) is bonded to one P(1); one H(1); one H(5); and one H(7,8) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Ga(1)PH2Cl tetrahedra,  a cornercorner with one C(2)PH3 tetrahedra, and  a cornercorner with one C(3)PH3 tetrahedra. In the second C site, C(2) is bonded to one P(1); one H(2); one H(6); and one H(7,8) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Ga(1)PH2Cl tetrahedra,  a cornercorner with one C(1)PH3 tetrahedra, and  a cornercorner with one C(3)PH3 tetrahedra. In the third C site, C(3) is bonded to one P(1), one H(10), one H(11), and one H(9) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Ga(1)PH2Cl tetrahedra,  a cornercorner with one C(1)PH3 tetrahedra, and  a cornercorner with one C(2)PH3 tetrahedra. P(1) is bonded in a tetrahedral geometry to one Ga(1), one C(1), one C(2), and one C(3) atom. There are ten inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one C(2) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Ga(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one Ga(1) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one C(1) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one C(2) atom. In the seventh H site, H(7,8) is bonded in a single-bond geometry to one C(1) atom. In the eighth H site, H(9) is bonded in a single-bond geometry to one C(3) atom. In the ninth H site, H(10) is bonded in a single-bond geometry to one C(3) atom. In the tenth H site, H(11) is bonded in a single-bond geometry to one C(3) atom. Cl(1) is bonded in a single-bond geometry to one Ga(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaPH11C3Cl
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.662
_cell_length_b   7.675
_cell_length_c   10.261
_cell_angle_alpha   89.959
_cell_angle_beta   89.979
_cell_angle_gamma   65.014
_symmetry_Int_Tables_number   1
_cell_volume   475.627
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.297  0.637  0.750  1.0
  Ga  Ga1  1  0.703  0.363  0.250  1.0
  P  P2  1  0.363  0.300  0.750  1.0
  P  P3  1  0.637  0.700  0.250  1.0
  H  H4  1  0.317  0.256  0.519  1.0
  H  H5  1  0.683  0.744  0.019  1.0
  H  H6  1  0.683  0.744  0.481  1.0
  H  H7  1  0.317  0.256  0.981  1.0
  H  H8  1  0.194  0.730  0.616  1.0
  H  H9  1  0.806  0.271  0.116  1.0
  H  H10  1  0.806  0.270  0.384  1.0
  H  H11  1  0.194  0.729  0.884  1.0
  H  H12  1  0.286  0.075  0.617  1.0
  H  H13  1  0.714  0.924  0.117  1.0
  H  H14  1  0.714  0.925  0.383  1.0
  H  H15  1  0.286  0.076  0.883  1.0
  H  H16  1  0.067  0.313  0.608  1.0
  H  H17  1  0.933  0.687  0.108  1.0
  H  H18  1  0.933  0.687  0.392  1.0
  H  H19  1  0.067  0.313  0.892  1.0
  H  H20  1  0.729  0.150  0.655  1.0
  H  H21  1  0.271  0.850  0.345  1.0
  H  H22  1  0.682  0.992  0.768  1.0
  H  H23  1  0.318  0.008  0.232  1.0
  H  H24  1  0.740  0.187  0.826  1.0
  H  H25  1  0.260  0.813  0.174  1.0
  C  C26  1  0.248  0.229  0.610  1.0
  C  C27  1  0.752  0.771  0.110  1.0
  C  C28  1  0.752  0.771  0.390  1.0
  C  C29  1  0.248  0.229  0.890  1.0
  C  C30  1  0.657  0.141  0.750  1.0
  C  C31  1  0.343  0.859  0.250  1.0
  Cl  Cl32  1  0.651  0.615  0.750  1.0
  Cl  Cl33  1  0.349  0.385  0.250  1.0
[/CIF]
.
The material structure described by GaC3PH11Cl is Silicon tetrafluoride-derived structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of two GaC3PH11Cl clusters. Ga(1) is bonded to one P(1), one H(3), one H(4), and one Cl(1) atom to form distorted GaPH2Cl tetrahedra that share  a cornercorner with one C(1)PH3 tetrahedra,  a cornercorner with one C(2)PH3 tetrahedra, and  a cornercorner with one C(3)PH3 tetrahedra. There are three inequivalent C sites. In the first C site, C(1) is bonded to one P(1); one H(1); one H(5); and one H(7,8) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Ga(1)PH2Cl tetrahedra,  a cornercorner with one C(2)PH3 tetrahedra, and  a cornercorner with one C(3)PH3 tetrahedra. In the second C site, C(2) is bonded to one P(1); one H(2); one H(6); and one H(7,8) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Ga(1)PH2Cl tetrahedra,  a cornercorner with one C(1)PH3 tetrahedra, and  a cornercorner with one C(3)PH3 tetrahedra. In the third C site, C(3) is bonded to one P(1), one H(10), one H(11), and one H(9) atom to form distorted CPH3 tetrahedra that share  a cornercorner with one Ga(1)PH2Cl tetrahedra,  a cornercorner with one C(1)PH3 tetrahedra, and  a cornercorner with one C(2)PH3 tetrahedra. P(1) is bonded in a tetrahedral geometry to one Ga(1), one C(1), one C(2), and one C(3) atom. There are ten inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one C(2) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Ga(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one Ga(1) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one C(1) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one C(2) atom. In the seventh H site, H(7,8) is bonded in a single-bond geometry to one C(1) atom. In the eighth H site, H(9) is bonded in a single-bond geometry to one C(3) atom. In the ninth H site, H(10) is bonded in a single-bond geometry to one C(3) atom. In the tenth H site, H(11) is bonded in a single-bond geometry to one C(3) atom. Cl(1) is bonded in a single-bond geometry to one Ga(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaPH11C3Cl
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.662
_cell_length_b   7.675
_cell_length_c   10.261
_cell_angle_alpha   89.959
_cell_angle_beta   89.979
_cell_angle_gamma   65.014
_symmetry_Int_Tables_number   1
_cell_volume   475.627
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.297  0.637  0.750  1.0
  Ga  Ga1  1  0.703  0.363  0.250  1.0
  P  P2  1  0.363  0.300  0.750  1.0
  P  P3  1  0.637  0.700  0.250  1.0
  H  H4  1  0.317  0.256  0.519  1.0
  H  H5  1  0.683  0.744  0.019  1.0
  H  H6  1  0.683  0.744  0.481  1.0
  H  H7  1  0.317  0.256  0.981  1.0
  H  H8  1  0.194  0.730  0.616  1.0
  H  H9  1  0.806  0.271  0.116  1.0
  H  H10  1  0.806  0.270  0.384  1.0
  H  H11  1  0.194  0.729  0.884  1.0
  H  H12  1  0.286  0.075  0.617  1.0
  H  H13  1  0.714  0.924  0.117  1.0
  H  H14  1  0.714  0.925  0.383  1.0
  H  H15  1  0.286  0.076  0.883  1.0
  H  H16  1  0.067  0.313  0.608  1.0
  H  H17  1  0.933  0.687  0.108  1.0
  H  H18  1  0.933  0.687  0.392  1.0
  H  H19  1  0.067  0.313  0.892  1.0
  H  H20  1  0.729  0.150  0.655  1.0
  H  H21  1  0.271  0.850  0.345  1.0
  H  H22  1  0.682  0.992  0.768  1.0
  H  H23  1  0.318  0.008  0.232  1.0
  H  H24  1  0.740  0.187  0.826  1.0
  H  H25  1  0.260  0.813  0.174  1.0
  C  C26  1  0.248  0.229  0.610  1.0
  C  C27  1  0.752  0.771  0.110  1.0
  C  C28  1  0.752  0.771  0.390  1.0
  C  C29  1  0.248  0.229  0.890  1.0
  C  C30  1  0.657  0.141  0.750  1.0
  C  C31  1  0.343  0.859  0.250  1.0
  Cl  Cl32  1  0.651  0.615  0.750  1.0
  Cl  Cl33  1  0.349  0.385  0.250  1.0
[/CIF]
.