The material structure described by V6Si5 crystallizes in the orthorhombic Immm space group. There are four inequivalent V sites. In the first V site, V(1) is bonded in a 7-coordinate geometry to four equivalent V(3), one Si(1), two equivalent Si(2), two equivalent Si(3), and two equivalent Si(4) atoms. In the second V site, V(2) is bonded in a 12-coordinate geometry to two equivalent V(2), four equivalent V(4), two equivalent Si(1), and four equivalent Si(4) atoms. In the third V site, V(3) is bonded in a 12-coordinate geometry to two equivalent V(1), two equivalent V(3), two equivalent V(4), two equivalent Si(1), two equivalent Si(2), and two equivalent Si(4) atoms. In the fourth V site, V(4) is bonded in a 6-coordinate geometry to two equivalent V(2), two equivalent V(3), one Si(1), one Si(2), two equivalent Si(3), and two equivalent Si(4) atoms. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to one V(1), two equivalent V(2), two equivalent V(4), and four equivalent V(3) atoms. In the second Si site, Si(2) is bonded in a 8-coordinate geometry to two equivalent V(1), two equivalent V(4), and four equivalent V(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to two equivalent V(1), four equivalent V(4), and two equivalent Si(3) atoms. In the fourth Si site, Si(4) is bonded in a 7-coordinate geometry to one V(1), two equivalent V(2), two equivalent V(3), and two equivalent V(4) atoms. is represented by the CIF card [CIF]
data_V6Si5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.934
_cell_length_b   8.048
_cell_length_c   8.815
_cell_angle_alpha   117.161
_cell_angle_beta   106.250
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   295.622
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.651  0.651  0.302  1.0
  V  V1  1  0.349  0.349  0.698  1.0
  V  V2  1  0.753  0.000  0.000  1.0
  V  V3  1  0.247  0.000  0.000  1.0
  V  V4  1  0.000  0.500  0.500  1.0
  V  V5  1  0.500  0.000  0.500  1.0
  V  V6  1  0.000  0.000  0.500  1.0
  V  V7  1  0.500  0.500  0.500  1.0
  V  V8  1  0.913  0.633  0.825  1.0
  V  V9  1  0.913  0.192  0.825  1.0
  V  V10  1  0.087  0.808  0.175  1.0
  V  V11  1  0.087  0.367  0.175  1.0
  Si  Si12  1  0.833  0.833  0.665  1.0
  Si  Si13  1  0.167  0.167  0.335  1.0
  Si  Si14  1  0.788  0.288  0.575  1.0
  Si  Si15  1  0.212  0.712  0.425  1.0
  Si  Si16  1  0.742  0.500  0.000  1.0
  Si  Si17  1  0.258  0.500  0.000  1.0
  Si  Si18  1  0.605  0.296  0.210  1.0
  Si  Si19  1  0.605  0.914  0.210  1.0
  Si  Si20  1  0.395  0.086  0.790  1.0
  Si  Si21  1  0.395  0.704  0.790  1.0
[/CIF]
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The material structure described by V6Si5 crystallizes in the orthorhombic Immm space group. There are four inequivalent V sites. In the first V site, V(1) is bonded in a 7-coordinate geometry to four equivalent V(3), one Si(1), two equivalent Si(2), two equivalent Si(3), and two equivalent Si(4) atoms. In the second V site, V(2) is bonded in a 12-coordinate geometry to two equivalent V(2), four equivalent V(4), two equivalent Si(1), and four equivalent Si(4) atoms. In the third V site, V(3) is bonded in a 12-coordinate geometry to two equivalent V(1), two equivalent V(3), two equivalent V(4), two equivalent Si(1), two equivalent Si(2), and two equivalent Si(4) atoms. In the fourth V site, V(4) is bonded in a 6-coordinate geometry to two equivalent V(2), two equivalent V(3), one Si(1), one Si(2), two equivalent Si(3), and two equivalent Si(4) atoms. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to one V(1), two equivalent V(2), two equivalent V(4), and four equivalent V(3) atoms. In the second Si site, Si(2) is bonded in a 8-coordinate geometry to two equivalent V(1), two equivalent V(4), and four equivalent V(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to two equivalent V(1), four equivalent V(4), and two equivalent Si(3) atoms. In the fourth Si site, Si(4) is bonded in a 7-coordinate geometry to one V(1), two equivalent V(2), two equivalent V(3), and two equivalent V(4) atoms. is represented by the CIF card [CIF]
data_V6Si5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.934
_cell_length_b   8.048
_cell_length_c   8.815
_cell_angle_alpha   117.161
_cell_angle_beta   106.250
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   295.622
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.651  0.651  0.302  1.0
  V  V1  1  0.349  0.349  0.698  1.0
  V  V2  1  0.753  0.000  0.000  1.0
  V  V3  1  0.247  0.000  0.000  1.0
  V  V4  1  0.000  0.500  0.500  1.0
  V  V5  1  0.500  0.000  0.500  1.0
  V  V6  1  0.000  0.000  0.500  1.0
  V  V7  1  0.500  0.500  0.500  1.0
  V  V8  1  0.913  0.633  0.825  1.0
  V  V9  1  0.913  0.192  0.825  1.0
  V  V10  1  0.087  0.808  0.175  1.0
  V  V11  1  0.087  0.367  0.175  1.0
  Si  Si12  1  0.833  0.833  0.665  1.0
  Si  Si13  1  0.167  0.167  0.335  1.0
  Si  Si14  1  0.788  0.288  0.575  1.0
  Si  Si15  1  0.212  0.712  0.425  1.0
  Si  Si16  1  0.742  0.500  0.000  1.0
  Si  Si17  1  0.258  0.500  0.000  1.0
  Si  Si18  1  0.605  0.296  0.210  1.0
  Si  Si19  1  0.605  0.914  0.210  1.0
  Si  Si20  1  0.395  0.086  0.790  1.0
  Si  Si21  1  0.395  0.704  0.790  1.0
[/CIF]
.