The material described by Ga2Al2Bi2O9 crystallizes in the orthorhombic Pbam space group. Ga(1) is bonded to one O(3), one O(4), and two equivalent O(2) atoms to form GaO4 tetrahedra that share corners with four equivalent Al(1)O6 octahedra and  a cornercorner with one Ga(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 50-58°. Al(1) is bonded to two equivalent O(1), two equivalent O(2), and two equivalent O(3) atoms to form AlO6 octahedra that share corners with four equivalent Ga(1)O4 tetrahedra and edges with two equivalent Al(1)O6 octahedra. Bi(1) is bonded in a distorted rectangular see-saw-like geometry to two equivalent O(1) and two equivalent O(2) atoms. There are four inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to two equivalent Al(1) and two equivalent Bi(1) atoms. In the second O site, O(2) is bonded in a distorted trigonal planar geometry to one Ga(1), one Al(1), and one Bi(1) atom. In the third O site, O(3) is bonded in a distorted trigonal planar geometry to one Ga(1) and two equivalent Al(1) atoms. In the fourth O site, O(4) is bonded in a linear geometry to two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_Al2Ga2Bi2O9
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.847
_cell_length_b   7.944
_cell_length_c   8.312
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   386.062
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Al  Al0  1  0.242  0.000  0.500  1.0
  Al  Al1  1  0.758  0.000  0.500  1.0
  Al  Al2  1  0.758  0.500  0.000  1.0
  Al  Al3  1  0.242  0.500  0.000  1.0
  Ga  Ga4  1  0.000  0.153  0.164  1.0
  Ga  Ga5  1  0.000  0.847  0.836  1.0
  Ga  Ga6  1  0.000  0.347  0.664  1.0
  Ga  Ga7  1  0.000  0.653  0.336  1.0
  Bi  Bi8  1  0.500  0.329  0.333  1.0
  Bi  Bi9  1  0.500  0.671  0.667  1.0
  Bi  Bi10  1  0.500  0.171  0.833  1.0
  Bi  Bi11  1  0.500  0.829  0.167  1.0
  O  O12  1  0.500  0.359  0.069  1.0
  O  O13  1  0.500  0.641  0.931  1.0
  O  O14  1  0.500  0.141  0.569  1.0
  O  O15  1  0.500  0.859  0.431  1.0
  O  O16  1  0.255  0.127  0.299  1.0
  O  O17  1  0.745  0.873  0.701  1.0
  O  O18  1  0.255  0.873  0.701  1.0
  O  O19  1  0.745  0.373  0.799  1.0
  O  O20  1  0.745  0.127  0.299  1.0
  O  O21  1  0.255  0.627  0.201  1.0
  O  O22  1  0.745  0.627  0.201  1.0
  O  O23  1  0.255  0.373  0.799  1.0
  O  O24  1  0.000  0.371  0.087  1.0
  O  O25  1  0.000  0.629  0.913  1.0
  O  O26  1  0.000  0.129  0.587  1.0
  O  O27  1  0.000  0.871  0.413  1.0
  O  O28  1  0.000  0.000  0.000  1.0
  O  O29  1  0.000  0.500  0.500  1.0
[/CIF]
.
The material described by Ga2Al2Bi2O9 crystallizes in the orthorhombic Pbam space group. Ga(1) is bonded to one O(3), one O(4), and two equivalent O(2) atoms to form GaO4 tetrahedra that share corners with four equivalent Al(1)O6 octahedra and  a cornercorner with one Ga(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 50-58°. Al(1) is bonded to two equivalent O(1), two equivalent O(2), and two equivalent O(3) atoms to form AlO6 octahedra that share corners with four equivalent Ga(1)O4 tetrahedra and edges with two equivalent Al(1)O6 octahedra. Bi(1) is bonded in a distorted rectangular see-saw-like geometry to two equivalent O(1) and two equivalent O(2) atoms. There are four inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to two equivalent Al(1) and two equivalent Bi(1) atoms. In the second O site, O(2) is bonded in a distorted trigonal planar geometry to one Ga(1), one Al(1), and one Bi(1) atom. In the third O site, O(3) is bonded in a distorted trigonal planar geometry to one Ga(1) and two equivalent Al(1) atoms. In the fourth O site, O(4) is bonded in a linear geometry to two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_Al2Ga2Bi2O9
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.847
_cell_length_b   7.944
_cell_length_c   8.312
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   386.062
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Al  Al0  1  0.242  0.000  0.500  1.0
  Al  Al1  1  0.758  0.000  0.500  1.0
  Al  Al2  1  0.758  0.500  0.000  1.0
  Al  Al3  1  0.242  0.500  0.000  1.0
  Ga  Ga4  1  0.000  0.153  0.164  1.0
  Ga  Ga5  1  0.000  0.847  0.836  1.0
  Ga  Ga6  1  0.000  0.347  0.664  1.0
  Ga  Ga7  1  0.000  0.653  0.336  1.0
  Bi  Bi8  1  0.500  0.329  0.333  1.0
  Bi  Bi9  1  0.500  0.671  0.667  1.0
  Bi  Bi10  1  0.500  0.171  0.833  1.0
  Bi  Bi11  1  0.500  0.829  0.167  1.0
  O  O12  1  0.500  0.359  0.069  1.0
  O  O13  1  0.500  0.641  0.931  1.0
  O  O14  1  0.500  0.141  0.569  1.0
  O  O15  1  0.500  0.859  0.431  1.0
  O  O16  1  0.255  0.127  0.299  1.0
  O  O17  1  0.745  0.873  0.701  1.0
  O  O18  1  0.255  0.873  0.701  1.0
  O  O19  1  0.745  0.373  0.799  1.0
  O  O20  1  0.745  0.127  0.299  1.0
  O  O21  1  0.255  0.627  0.201  1.0
  O  O22  1  0.745  0.627  0.201  1.0
  O  O23  1  0.255  0.373  0.799  1.0
  O  O24  1  0.000  0.371  0.087  1.0
  O  O25  1  0.000  0.629  0.913  1.0
  O  O26  1  0.000  0.129  0.587  1.0
  O  O27  1  0.000  0.871  0.413  1.0
  O  O28  1  0.000  0.000  0.000  1.0
  O  O29  1  0.000  0.500  0.500  1.0
[/CIF]
.