The material structure described by InGaSe2 crystallizes in the tetragonal I4cm space group. In(1) is bonded in a 4-coordinate geometry to four equivalent Se(1) atoms. Ga(1) is bonded to four equivalent Se(1) atoms to form edge-sharing GaSe4 tetrahedra. Se(1) is bonded to two equivalent In(1) and two equivalent Ga(1) atoms to form a mixture of distorted corner and edge-sharing SeIn2Ga2 trigonal pyramids. is represented by the CIF card [CIF]
data_InGaSe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.629
_cell_length_b   6.629
_cell_length_c   6.629
_cell_angle_alpha   103.105
_cell_angle_beta   103.105
_cell_angle_gamma   123.129
_symmetry_Int_Tables_number   1
_cell_volume   214.507
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.598  0.598  0.000  1.0
  In  In1  1  0.098  0.098  0.000  1.0
  Ga  Ga2  1  0.250  0.750  0.500  1.0
  Ga  Ga3  1  0.750  0.250  0.500  1.0
  Se  Se4  1  0.162  0.339  0.500  1.0
  Se  Se5  1  0.839  0.662  0.500  1.0
  Se  Se6  1  0.339  0.839  0.177  1.0
  Se  Se7  1  0.662  0.162  0.823  1.0
[/CIF]
.
The material structure described by InGaSe2 crystallizes in the tetragonal I4cm space group. In(1) is bonded in a 4-coordinate geometry to four equivalent Se(1) atoms. Ga(1) is bonded to four equivalent Se(1) atoms to form edge-sharing GaSe4 tetrahedra. Se(1) is bonded to two equivalent In(1) and two equivalent Ga(1) atoms to form a mixture of distorted corner and edge-sharing SeIn2Ga2 trigonal pyramids. is represented by the CIF card [CIF]
data_InGaSe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.629
_cell_length_b   6.629
_cell_length_c   6.629
_cell_angle_alpha   103.105
_cell_angle_beta   103.105
_cell_angle_gamma   123.129
_symmetry_Int_Tables_number   1
_cell_volume   214.507
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.598  0.598  0.000  1.0
  In  In1  1  0.098  0.098  0.000  1.0
  Ga  Ga2  1  0.250  0.750  0.500  1.0
  Ga  Ga3  1  0.750  0.250  0.500  1.0
  Se  Se4  1  0.162  0.339  0.500  1.0
  Se  Se5  1  0.839  0.662  0.500  1.0
  Se  Se6  1  0.339  0.839  0.177  1.0
  Se  Se7  1  0.662  0.162  0.823  1.0
[/CIF]
.