The crystal structure described by SiO2 is Low Tridymite-like structured and crystallizes in the monoclinic C2/c space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(4), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(5) atom to form corner-sharing SiO4 tetrahedra. There are five inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a linear geometry to two equivalent Si(2) atoms. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. is represented by the CIF file [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.133
_cell_length_b   7.136
_cell_length_c   7.151
_cell_angle_alpha   60.068
_cell_angle_beta   75.795
_cell_angle_gamma   60.541
_symmetry_Int_Tables_number   1
_cell_volume   274.675
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.041  0.623  0.684  1.0
  Si  Si1  1  0.459  0.192  0.684  1.0
  Si  Si2  1  0.959  0.377  0.316  1.0
  Si  Si3  1  0.541  0.808  0.316  1.0
  Si  Si4  1  0.573  0.676  0.783  1.0
  Si  Si5  1  0.927  0.041  0.783  1.0
  Si  Si6  1  0.427  0.324  0.217  1.0
  Si  Si7  1  0.073  0.959  0.217  1.0
  O  O8  1  0.977  0.254  0.576  1.0
  O  O9  1  0.523  0.670  0.576  1.0
  O  O10  1  0.023  0.746  0.424  1.0
  O  O11  1  0.477  0.330  0.424  1.0
  O  O12  1  0.828  0.587  0.793  1.0
  O  O13  1  0.672  0.120  0.793  1.0
  O  O14  1  0.172  0.413  0.207  1.0
  O  O15  1  0.328  0.880  0.207  1.0
  O  O16  1  0.000  0.000  0.000  1.0
  O  O17  1  0.500  0.500  0.000  1.0
  O  O18  1  0.750  0.635  0.231  1.0
  O  O19  1  0.250  0.365  0.769  1.0
  O  O20  1  0.940  0.201  0.249  1.0
  O  O21  1  0.560  0.050  0.249  1.0
  O  O22  1  0.060  0.799  0.751  1.0
  O  O23  1  0.440  0.950  0.751  1.0
[/CIF]
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The crystal structure described by SiO2 is Low Tridymite-like structured and crystallizes in the monoclinic C2/c space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(4), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(5) atom to form corner-sharing SiO4 tetrahedra. There are five inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a linear geometry to two equivalent Si(2) atoms. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. is represented by the CIF file [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.133
_cell_length_b   7.136
_cell_length_c   7.151
_cell_angle_alpha   60.068
_cell_angle_beta   75.795
_cell_angle_gamma   60.541
_symmetry_Int_Tables_number   1
_cell_volume   274.675
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.041  0.623  0.684  1.0
  Si  Si1  1  0.459  0.192  0.684  1.0
  Si  Si2  1  0.959  0.377  0.316  1.0
  Si  Si3  1  0.541  0.808  0.316  1.0
  Si  Si4  1  0.573  0.676  0.783  1.0
  Si  Si5  1  0.927  0.041  0.783  1.0
  Si  Si6  1  0.427  0.324  0.217  1.0
  Si  Si7  1  0.073  0.959  0.217  1.0
  O  O8  1  0.977  0.254  0.576  1.0
  O  O9  1  0.523  0.670  0.576  1.0
  O  O10  1  0.023  0.746  0.424  1.0
  O  O11  1  0.477  0.330  0.424  1.0
  O  O12  1  0.828  0.587  0.793  1.0
  O  O13  1  0.672  0.120  0.793  1.0
  O  O14  1  0.172  0.413  0.207  1.0
  O  O15  1  0.328  0.880  0.207  1.0
  O  O16  1  0.000  0.000  0.000  1.0
  O  O17  1  0.500  0.500  0.000  1.0
  O  O18  1  0.750  0.635  0.231  1.0
  O  O19  1  0.250  0.365  0.769  1.0
  O  O20  1  0.940  0.201  0.249  1.0
  O  O21  1  0.560  0.050  0.249  1.0
  O  O22  1  0.060  0.799  0.751  1.0
  O  O23  1  0.440  0.950  0.751  1.0
[/CIF]
.