The crystal structure described by VMnGa5 crystallizes in the orthorhombic Cmmm space group. V(1) is bonded to two equivalent V(1), two equivalent Ga(4), four equivalent Ga(1), and four equivalent Ga(2) atoms to form VV2Ga10 cuboctahedra that share corners with four equivalent V(1)V2Ga10 cuboctahedra, corners with eight equivalent Mn(1)Mn2Ga10 cuboctahedra,  an edgeedge with one V(1)V2Ga10 cuboctahedra, edges with four equivalent Mn(1)Mn2Ga10 cuboctahedra, and faces with two equivalent V(1)V2Ga10 cuboctahedra. Mn(1) is bonded to two equivalent Mn(1), two equivalent Ga(3), four equivalent Ga(1), and four equivalent Ga(2) atoms to form distorted MnMn2Ga10 cuboctahedra that share corners with four equivalent Mn(1)Mn2Ga10 cuboctahedra, corners with eight equivalent V(1)V2Ga10 cuboctahedra,  an edgeedge with one Mn(1)Mn2Ga10 cuboctahedra, edges with four equivalent V(1)V2Ga10 cuboctahedra, and faces with two equivalent Mn(1)Mn2Ga10 cuboctahedra. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded in a 10-coordinate geometry to two equivalent V(1), two equivalent Mn(1), one Ga(3), two equivalent Ga(2), and three equivalent Ga(1) atoms. In the second Ga site, Ga(2) is bonded in a 10-coordinate geometry to two equivalent V(1), two equivalent Mn(1), one Ga(4), two equivalent Ga(1), and three equivalent Ga(2) atoms. In the third Ga site, Ga(3) is bonded in a 10-coordinate geometry to four equivalent Mn(1), two equivalent Ga(3), and four equivalent Ga(1) atoms. In the fourth Ga site, Ga(4) is bonded in a distorted q6 geometry to four equivalent V(1), two equivalent Ga(4), and four equivalent Ga(2) atoms. is represented by the CIF card [CIF]
data_MnVGa5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.895
_cell_length_b   8.895
_cell_length_c   2.690
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.381
_symmetry_Int_Tables_number   1
_cell_volume   212.818
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Mn  Mn0  1  0.822  0.178  0.500  1.0
  Mn  Mn1  1  0.178  0.822  0.500  1.0
  V  V2  1  0.319  0.319  0.500  1.0
  V  V3  1  0.681  0.681  0.500  1.0
  Ga  Ga4  1  0.939  0.704  0.000  1.0
  Ga  Ga5  1  0.061  0.296  0.000  1.0
  Ga  Ga6  1  0.436  0.795  0.000  1.0
  Ga  Ga7  1  0.564  0.205  0.000  1.0
  Ga  Ga8  1  0.205  0.564  0.000  1.0
  Ga  Ga9  1  0.795  0.436  0.000  1.0
  Ga  Ga10  1  0.296  0.061  0.000  1.0
  Ga  Ga11  1  0.704  0.939  0.000  1.0
  Ga  Ga12  1  0.000  0.000  0.000  1.0
  Ga  Ga13  1  0.500  0.500  0.000  1.0
[/CIF]
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The crystal structure described by VMnGa5 crystallizes in the orthorhombic Cmmm space group. V(1) is bonded to two equivalent V(1), two equivalent Ga(4), four equivalent Ga(1), and four equivalent Ga(2) atoms to form VV2Ga10 cuboctahedra that share corners with four equivalent V(1)V2Ga10 cuboctahedra, corners with eight equivalent Mn(1)Mn2Ga10 cuboctahedra,  an edgeedge with one V(1)V2Ga10 cuboctahedra, edges with four equivalent Mn(1)Mn2Ga10 cuboctahedra, and faces with two equivalent V(1)V2Ga10 cuboctahedra. Mn(1) is bonded to two equivalent Mn(1), two equivalent Ga(3), four equivalent Ga(1), and four equivalent Ga(2) atoms to form distorted MnMn2Ga10 cuboctahedra that share corners with four equivalent Mn(1)Mn2Ga10 cuboctahedra, corners with eight equivalent V(1)V2Ga10 cuboctahedra,  an edgeedge with one Mn(1)Mn2Ga10 cuboctahedra, edges with four equivalent V(1)V2Ga10 cuboctahedra, and faces with two equivalent Mn(1)Mn2Ga10 cuboctahedra. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded in a 10-coordinate geometry to two equivalent V(1), two equivalent Mn(1), one Ga(3), two equivalent Ga(2), and three equivalent Ga(1) atoms. In the second Ga site, Ga(2) is bonded in a 10-coordinate geometry to two equivalent V(1), two equivalent Mn(1), one Ga(4), two equivalent Ga(1), and three equivalent Ga(2) atoms. In the third Ga site, Ga(3) is bonded in a 10-coordinate geometry to four equivalent Mn(1), two equivalent Ga(3), and four equivalent Ga(1) atoms. In the fourth Ga site, Ga(4) is bonded in a distorted q6 geometry to four equivalent V(1), two equivalent Ga(4), and four equivalent Ga(2) atoms. is represented by the CIF card [CIF]
data_MnVGa5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.895
_cell_length_b   8.895
_cell_length_c   2.690
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.381
_symmetry_Int_Tables_number   1
_cell_volume   212.818
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Mn  Mn0  1  0.822  0.178  0.500  1.0
  Mn  Mn1  1  0.178  0.822  0.500  1.0
  V  V2  1  0.319  0.319  0.500  1.0
  V  V3  1  0.681  0.681  0.500  1.0
  Ga  Ga4  1  0.939  0.704  0.000  1.0
  Ga  Ga5  1  0.061  0.296  0.000  1.0
  Ga  Ga6  1  0.436  0.795  0.000  1.0
  Ga  Ga7  1  0.564  0.205  0.000  1.0
  Ga  Ga8  1  0.205  0.564  0.000  1.0
  Ga  Ga9  1  0.795  0.436  0.000  1.0
  Ga  Ga10  1  0.296  0.061  0.000  1.0
  Ga  Ga11  1  0.704  0.939  0.000  1.0
  Ga  Ga12  1  0.000  0.000  0.000  1.0
  Ga  Ga13  1  0.500  0.500  0.000  1.0
[/CIF]
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