The compound described by Na4GaSnSi2PO12 crystallizes in the monoclinic Cc space group. There are four inequivalent Na sites. In the first Na site, Na(1) is bonded in a 8-coordinate geometry to one O(1), one O(10), one O(11), one O(3), one O(7), one O(9), and two equivalent O(5) atoms. In the second Na site, Na(2) is bonded in a 8-coordinate geometry to one O(1), one O(11), one O(12), one O(3), one O(4), one O(6), one O(8), and one O(9) atom. In the third Na site, Na(3) is bonded in a 8-coordinate geometry to one O(10), one O(12), one O(4), one O(6), one O(7), one O(8), and two equivalent O(2) atoms. In the fourth Na site, Na(4) is bonded in a distorted hexagonal planar geometry to one O(10), one O(11), one O(12), one O(7), one O(8), and one O(9) atom. Ga(1) is bonded to one O(1), one O(2), one O(3), one O(7), one O(8), and one O(9) atom to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent P(1)O4 tetrahedra. Sn(1) is bonded to one O(10), one O(11), one O(12), one O(4), one O(5), and one O(6) atom to form SnO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent P(1)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(11), one O(2), one O(5), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Sn(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 32-38°. In the second Si site, Si(2) is bonded to one O(12), one O(3), one O(4), and one O(7) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Sn(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 29-38°. P(1) is bonded to one O(1), one O(10), one O(6), and one O(9) atom to form PO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Sn(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 31-36°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to one Na(1), one Na(2), one Ga(1), and one P(1) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to two equivalent Na(3), one Ga(1), and one Si(1) atom. In the third O site, O(3) is bonded in a 2-coordinate geometry to one Na(1), one Na(2), one Ga(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Na(2), one Na(3), one Sn(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to two equivalent Na(1), one Sn(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one Na(2), one Na(3), one Sn(1), and one P(1) atom. In the seventh O site, O(7) is bonded to one Na(1), one Na(3), one Na(4), one Ga(1), and one Si(2) atom to form distorted ONa3GaSi trigonal bipyramids that share  a cornercorner with one O(12)Na3SiSn trigonal bipyramid, corners with two equivalent O(11)Na3SiSn trigonal bipyramids,  an edgeedge with one O(12)Na3SiSn trigonal bipyramid, and  a faceface with one O(8)Na3GaSi trigonal bipyramid. In the eighth O site, O(8) is bonded to one Na(2), one Na(3), one Na(4), one Ga(1), and one Si(1) atom to form distorted ONa3GaSi trigonal bipyramids that share  a cornercorner with one O(11)Na3SiSn trigonal bipyramid, corners with three equivalent O(12)Na3SiSn trigonal bipyramids,  an edgeedge with one O(11)Na3SiSn trigonal bipyramid, and  a faceface with one O(7)Na3GaSi trigonal bipyramid. In the ninth O site, O(9) is bonded in a 5-coordinate geometry to one Na(1), one Na(2), one Na(4), one Ga(1), and one P(1) atom. In the tenth O site, O(10) is bonded in a 5-coordinate geometry to one Na(1), one Na(3), one Na(4), one Sn(1), and one P(1) atom. In the eleventh O site, O(11) is bonded to one Na(1), one Na(2), one Na(4), one Sn(1), and one Si(1) atom to form distorted ONa3SiSn trigonal bipyramids that share  a cornercorner with one O(8)Na3GaSi trigonal bipyramid, corners with two equivalent O(7)Na3GaSi trigonal bipyramids,  an edgeedge with one O(8)Na3GaSi trigonal bipyramid, and  a faceface with one O(12)Na3SiSn trigonal bipyramid. In the twelfth O site, O(12) is bonded to one Na(2), one Na(3), one Na(4), one Sn(1), and one Si(2) atom to form distorted ONa3SiSn trigonal bipyramids that share  a cornercorner with one O(7)Na3GaSi trigonal bipyramid, corners with three equivalent O(8)Na3GaSi trigonal bipyramids,  an edgeedge with one O(7)Na3GaSi trigonal bipyramid, and  a faceface with one O(11)Na3SiSn trigonal bipyramid. is represented by the CIF file [CIF]
data_Na4GaSi2SnPO12
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.012
_cell_length_b   9.075
_cell_length_c   9.012
_cell_angle_alpha   119.682
_cell_angle_beta   119.744
_cell_angle_gamma   60.318
_symmetry_Int_Tables_number   1
_cell_volume   524.684
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.640  0.053  0.338  1.0
  Ga  Ga1  1  0.162  0.553  0.860  1.0
  Na  Na2  1  0.754  0.750  0.888  1.0
  Na  Na3  1  0.119  0.742  0.616  1.0
  Na  Na4  1  0.378  0.750  0.243  1.0
  Na  Na5  1  0.884  0.242  0.381  1.0
  Na  Na6  1  0.612  0.250  0.746  1.0
  Na  Na7  1  0.257  0.250  0.122  1.0
  Na  Na8  1  0.498  0.493  0.496  1.0
  Na  Na9  1  0.004  0.993  0.002  1.0
  O  O10  1  0.729  0.920  0.517  1.0
  O  O11  1  0.481  0.927  0.140  1.0
  O  O12  1  0.860  0.930  0.276  1.0
  O  O13  1  0.360  0.427  0.019  1.0
  O  O14  1  0.983  0.420  0.771  1.0
  O  O15  1  0.224  0.430  0.640  1.0
  O  O16  1  0.266  0.073  0.475  1.0
  O  O17  1  0.525  0.073  0.864  1.0
  O  O18  1  0.126  0.082  0.732  1.0
  O  O19  1  0.636  0.573  0.975  1.0
  O  O20  1  0.025  0.573  0.234  1.0
  O  O21  1  0.768  0.582  0.374  1.0
  O  O22  1  0.433  0.232  0.439  1.0
  O  O23  1  0.569  0.235  0.231  1.0
  O  O24  1  0.784  0.233  0.583  1.0
  O  O25  1  0.269  0.735  0.931  1.0
  O  O26  1  0.061  0.732  0.067  1.0
  O  O27  1  0.917  0.733  0.716  1.0
  O  O28  1  0.582  0.765  0.564  1.0
  O  O29  1  0.435  0.767  0.773  1.0
  O  O30  1  0.227  0.765  0.425  1.0
  O  O31  1  0.727  0.267  0.065  1.0
  O  O32  1  0.936  0.265  0.918  1.0
  O  O33  1  0.075  0.265  0.273  1.0
  P  P34  1  0.752  0.755  0.545  1.0
  P  P35  1  0.955  0.255  0.748  1.0
  Si  Si36  1  0.454  0.753  0.959  1.0
  Si  Si37  1  0.038  0.755  0.247  1.0
  Si  Si38  1  0.541  0.253  0.046  1.0
  Si  Si39  1  0.253  0.255  0.462  1.0
  Sn  Sn40  1  0.350  0.948  0.648  1.0
  Sn  Sn41  1  0.852  0.448  0.150  1.0
[/CIF]
.
The compound described by Na4GaSnSi2PO12 crystallizes in the monoclinic Cc space group. There are four inequivalent Na sites. In the first Na site, Na(1) is bonded in a 8-coordinate geometry to one O(1), one O(10), one O(11), one O(3), one O(7), one O(9), and two equivalent O(5) atoms. In the second Na site, Na(2) is bonded in a 8-coordinate geometry to one O(1), one O(11), one O(12), one O(3), one O(4), one O(6), one O(8), and one O(9) atom. In the third Na site, Na(3) is bonded in a 8-coordinate geometry to one O(10), one O(12), one O(4), one O(6), one O(7), one O(8), and two equivalent O(2) atoms. In the fourth Na site, Na(4) is bonded in a distorted hexagonal planar geometry to one O(10), one O(11), one O(12), one O(7), one O(8), and one O(9) atom. Ga(1) is bonded to one O(1), one O(2), one O(3), one O(7), one O(8), and one O(9) atom to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent P(1)O4 tetrahedra. Sn(1) is bonded to one O(10), one O(11), one O(12), one O(4), one O(5), and one O(6) atom to form SnO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent P(1)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(11), one O(2), one O(5), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Sn(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 32-38°. In the second Si site, Si(2) is bonded to one O(12), one O(3), one O(4), and one O(7) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Sn(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 29-38°. P(1) is bonded to one O(1), one O(10), one O(6), and one O(9) atom to form PO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Sn(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 31-36°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to one Na(1), one Na(2), one Ga(1), and one P(1) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to two equivalent Na(3), one Ga(1), and one Si(1) atom. In the third O site, O(3) is bonded in a 2-coordinate geometry to one Na(1), one Na(2), one Ga(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Na(2), one Na(3), one Sn(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to two equivalent Na(1), one Sn(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one Na(2), one Na(3), one Sn(1), and one P(1) atom. In the seventh O site, O(7) is bonded to one Na(1), one Na(3), one Na(4), one Ga(1), and one Si(2) atom to form distorted ONa3GaSi trigonal bipyramids that share  a cornercorner with one O(12)Na3SiSn trigonal bipyramid, corners with two equivalent O(11)Na3SiSn trigonal bipyramids,  an edgeedge with one O(12)Na3SiSn trigonal bipyramid, and  a faceface with one O(8)Na3GaSi trigonal bipyramid. In the eighth O site, O(8) is bonded to one Na(2), one Na(3), one Na(4), one Ga(1), and one Si(1) atom to form distorted ONa3GaSi trigonal bipyramids that share  a cornercorner with one O(11)Na3SiSn trigonal bipyramid, corners with three equivalent O(12)Na3SiSn trigonal bipyramids,  an edgeedge with one O(11)Na3SiSn trigonal bipyramid, and  a faceface with one O(7)Na3GaSi trigonal bipyramid. In the ninth O site, O(9) is bonded in a 5-coordinate geometry to one Na(1), one Na(2), one Na(4), one Ga(1), and one P(1) atom. In the tenth O site, O(10) is bonded in a 5-coordinate geometry to one Na(1), one Na(3), one Na(4), one Sn(1), and one P(1) atom. In the eleventh O site, O(11) is bonded to one Na(1), one Na(2), one Na(4), one Sn(1), and one Si(1) atom to form distorted ONa3SiSn trigonal bipyramids that share  a cornercorner with one O(8)Na3GaSi trigonal bipyramid, corners with two equivalent O(7)Na3GaSi trigonal bipyramids,  an edgeedge with one O(8)Na3GaSi trigonal bipyramid, and  a faceface with one O(12)Na3SiSn trigonal bipyramid. In the twelfth O site, O(12) is bonded to one Na(2), one Na(3), one Na(4), one Sn(1), and one Si(2) atom to form distorted ONa3SiSn trigonal bipyramids that share  a cornercorner with one O(7)Na3GaSi trigonal bipyramid, corners with three equivalent O(8)Na3GaSi trigonal bipyramids,  an edgeedge with one O(7)Na3GaSi trigonal bipyramid, and  a faceface with one O(11)Na3SiSn trigonal bipyramid. is represented by the CIF file [CIF]
data_Na4GaSi2SnPO12
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.012
_cell_length_b   9.075
_cell_length_c   9.012
_cell_angle_alpha   119.682
_cell_angle_beta   119.744
_cell_angle_gamma   60.318
_symmetry_Int_Tables_number   1
_cell_volume   524.684
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.640  0.053  0.338  1.0
  Ga  Ga1  1  0.162  0.553  0.860  1.0
  Na  Na2  1  0.754  0.750  0.888  1.0
  Na  Na3  1  0.119  0.742  0.616  1.0
  Na  Na4  1  0.378  0.750  0.243  1.0
  Na  Na5  1  0.884  0.242  0.381  1.0
  Na  Na6  1  0.612  0.250  0.746  1.0
  Na  Na7  1  0.257  0.250  0.122  1.0
  Na  Na8  1  0.498  0.493  0.496  1.0
  Na  Na9  1  0.004  0.993  0.002  1.0
  O  O10  1  0.729  0.920  0.517  1.0
  O  O11  1  0.481  0.927  0.140  1.0
  O  O12  1  0.860  0.930  0.276  1.0
  O  O13  1  0.360  0.427  0.019  1.0
  O  O14  1  0.983  0.420  0.771  1.0
  O  O15  1  0.224  0.430  0.640  1.0
  O  O16  1  0.266  0.073  0.475  1.0
  O  O17  1  0.525  0.073  0.864  1.0
  O  O18  1  0.126  0.082  0.732  1.0
  O  O19  1  0.636  0.573  0.975  1.0
  O  O20  1  0.025  0.573  0.234  1.0
  O  O21  1  0.768  0.582  0.374  1.0
  O  O22  1  0.433  0.232  0.439  1.0
  O  O23  1  0.569  0.235  0.231  1.0
  O  O24  1  0.784  0.233  0.583  1.0
  O  O25  1  0.269  0.735  0.931  1.0
  O  O26  1  0.061  0.732  0.067  1.0
  O  O27  1  0.917  0.733  0.716  1.0
  O  O28  1  0.582  0.765  0.564  1.0
  O  O29  1  0.435  0.767  0.773  1.0
  O  O30  1  0.227  0.765  0.425  1.0
  O  O31  1  0.727  0.267  0.065  1.0
  O  O32  1  0.936  0.265  0.918  1.0
  O  O33  1  0.075  0.265  0.273  1.0
  P  P34  1  0.752  0.755  0.545  1.0
  P  P35  1  0.955  0.255  0.748  1.0
  Si  Si36  1  0.454  0.753  0.959  1.0
  Si  Si37  1  0.038  0.755  0.247  1.0
  Si  Si38  1  0.541  0.253  0.046  1.0
  Si  Si39  1  0.253  0.255  0.462  1.0
  Sn  Sn40  1  0.350  0.948  0.648  1.0
  Sn  Sn41  1  0.852  0.448  0.150  1.0
[/CIF]
.