The material described by GaAs is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmm2 space group. Ga(1) is bonded in a 6-coordinate geometry to four equivalent Ga(1) and two equivalent As(1) atoms. As(1) is bonded in a 6-coordinate geometry to two equivalent Ga(1) and four equivalent As(1) atoms. is represented by the CIF file [CIF]
data_GaAs
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   2.675
_cell_length_b   2.822
_cell_length_c   5.269
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   39.781
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.000  0.351  0.500  1.0
  As  As1  1  0.000  0.999  0.000  1.0
[/CIF]
.
The material described by GaAs is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmm2 space group. Ga(1) is bonded in a 6-coordinate geometry to four equivalent Ga(1) and two equivalent As(1) atoms. As(1) is bonded in a 6-coordinate geometry to two equivalent Ga(1) and four equivalent As(1) atoms. is represented by the CIF file [CIF]
data_GaAs
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   2.675
_cell_length_b   2.822
_cell_length_c   5.269
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   39.781
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.000  0.351  0.500  1.0
  As  As1  1  0.000  0.999  0.000  1.0
[/CIF]
.