The structure described by LiGaSi2O6 crystallizes in the monoclinic P2_1/c space group. Li(1) is bonded to one O(1), one O(2), one O(3), one O(4), and one O(6) atom to form distorted LiO5 square pyramids that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with three equivalent Ga(1)O6 octahedra, and  an edgeedge with one Si(1)O4 tetrahedra. Ga(1) is bonded to one O(1), one O(6), two equivalent O(2), and two equivalent O(3) atoms to form GaO6 octahedra that share corners with three equivalent Si(1)O4 tetrahedra, corners with three equivalent Si(2)O4 tetrahedra, edges with two equivalent Ga(1)O6 octahedra, and edges with three equivalent Li(1)O5 square pyramids. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), and two equivalent O(4) atoms to form SiO4 tetrahedra that share corners with three equivalent Ga(1)O6 octahedra, corners with two equivalent Li(1)O5 square pyramids, corners with two equivalent Si(1)O4 tetrahedra, and  an edgeedge with one Li(1)O5 square pyramid. The corner-sharing octahedral tilt angles range from 35-59°. In the second Si site, Si(2) is bonded to one O(3), one O(6), and two equivalent O(5) atoms to form SiO4 tetrahedra that share corners with three equivalent Ga(1)O6 octahedra, corners with two equivalent Li(1)O5 square pyramids, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 42-60°. There are six inequivalent O sites. In the first O site, O(6) is bonded in a distorted trigonal non-coplanar geometry to one Li(1), one Ga(1), and one Si(2) atom. In the second O site, O(1) is bonded in a distorted T-shaped geometry to one Li(1), one Ga(1), and one Si(1) atom. In the third O site, O(2) is bonded to one Li(1), two equivalent Ga(1), and one Si(1) atom to form a mixture of distorted corner and edge-sharing OLiGa2Si trigonal pyramids. In the fourth O site, O(3) is bonded to one Li(1), two equivalent Ga(1), and one Si(2) atom to form a mixture of distorted corner and edge-sharing OLiGa2Si trigonal pyramids. In the fifth O site, O(4) is bonded in a 3-coordinate geometry to one Li(1) and two equivalent Si(1) atoms. In the sixth O site, O(5) is bonded in a bent 150 degrees geometry to two equivalent Si(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_LiGa(SiO3)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.726
_cell_length_b   5.315
_cell_length_c   9.283
_cell_angle_alpha   78.176
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   421.428
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.007  0.989  0.247  1.0
  Li  Li1  1  0.507  0.511  0.753  1.0
  Li  Li2  1  0.993  0.011  0.753  1.0
  Li  Li3  1  0.493  0.489  0.247  1.0
  Ga  Ga4  1  0.647  0.987  0.250  1.0
  Ga  Ga5  1  0.853  0.487  0.250  1.0
  Ga  Ga6  1  0.353  0.013  0.750  1.0
  Ga  Ga7  1  0.147  0.513  0.750  1.0
  Si  Si8  1  0.660  0.777  0.952  1.0
  Si  Si9  1  0.660  0.203  0.548  1.0
  Si  Si10  1  0.160  0.297  0.452  1.0
  Si  Si11  1  0.340  0.797  0.452  1.0
  Si  Si12  1  0.840  0.703  0.548  1.0
  Si  Si13  1  0.160  0.723  0.048  1.0
  Si  Si14  1  0.840  0.277  0.952  1.0
  Si  Si15  1  0.340  0.223  0.048  1.0
  O  O16  1  0.990  0.698  0.116  1.0
  O  O17  1  0.168  0.790  0.865  1.0
  O  O18  1  0.668  0.710  0.135  1.0
  O  O19  1  0.832  0.210  0.135  1.0
  O  O20  1  0.332  0.290  0.865  1.0
  O  O21  1  0.666  0.267  0.365  1.0
  O  O22  1  0.166  0.233  0.635  1.0
  O  O23  1  0.334  0.733  0.635  1.0
  O  O24  1  0.834  0.767  0.365  1.0
  O  O25  1  0.265  0.466  0.108  1.0
  O  O26  1  0.490  0.802  0.884  1.0
  O  O27  1  0.010  0.302  0.884  1.0
  O  O28  1  0.726  0.910  0.604  1.0
  O  O29  1  0.226  0.590  0.396  1.0
  O  O30  1  0.274  0.090  0.396  1.0
  O  O31  1  0.774  0.410  0.604  1.0
  O  O32  1  0.735  0.534  0.892  1.0
  O  O33  1  0.765  0.034  0.892  1.0
  O  O34  1  0.495  0.229  0.622  1.0
  O  O35  1  0.235  0.966  0.108  1.0
  O  O36  1  0.005  0.729  0.622  1.0
  O  O37  1  0.505  0.771  0.378  1.0
  O  O38  1  0.995  0.271  0.378  1.0
  O  O39  1  0.510  0.198  0.116  1.0
[/CIF]
.
The structure described by LiGaSi2O6 crystallizes in the monoclinic P2_1/c space group. Li(1) is bonded to one O(1), one O(2), one O(3), one O(4), and one O(6) atom to form distorted LiO5 square pyramids that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, edges with three equivalent Ga(1)O6 octahedra, and  an edgeedge with one Si(1)O4 tetrahedra. Ga(1) is bonded to one O(1), one O(6), two equivalent O(2), and two equivalent O(3) atoms to form GaO6 octahedra that share corners with three equivalent Si(1)O4 tetrahedra, corners with three equivalent Si(2)O4 tetrahedra, edges with two equivalent Ga(1)O6 octahedra, and edges with three equivalent Li(1)O5 square pyramids. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), and two equivalent O(4) atoms to form SiO4 tetrahedra that share corners with three equivalent Ga(1)O6 octahedra, corners with two equivalent Li(1)O5 square pyramids, corners with two equivalent Si(1)O4 tetrahedra, and  an edgeedge with one Li(1)O5 square pyramid. The corner-sharing octahedral tilt angles range from 35-59°. In the second Si site, Si(2) is bonded to one O(3), one O(6), and two equivalent O(5) atoms to form SiO4 tetrahedra that share corners with three equivalent Ga(1)O6 octahedra, corners with two equivalent Li(1)O5 square pyramids, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 42-60°. There are six inequivalent O sites. In the first O site, O(6) is bonded in a distorted trigonal non-coplanar geometry to one Li(1), one Ga(1), and one Si(2) atom. In the second O site, O(1) is bonded in a distorted T-shaped geometry to one Li(1), one Ga(1), and one Si(1) atom. In the third O site, O(2) is bonded to one Li(1), two equivalent Ga(1), and one Si(1) atom to form a mixture of distorted corner and edge-sharing OLiGa2Si trigonal pyramids. In the fourth O site, O(3) is bonded to one Li(1), two equivalent Ga(1), and one Si(2) atom to form a mixture of distorted corner and edge-sharing OLiGa2Si trigonal pyramids. In the fifth O site, O(4) is bonded in a 3-coordinate geometry to one Li(1) and two equivalent Si(1) atoms. In the sixth O site, O(5) is bonded in a bent 150 degrees geometry to two equivalent Si(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_LiGa(SiO3)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.726
_cell_length_b   5.315
_cell_length_c   9.283
_cell_angle_alpha   78.176
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   421.428
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.007  0.989  0.247  1.0
  Li  Li1  1  0.507  0.511  0.753  1.0
  Li  Li2  1  0.993  0.011  0.753  1.0
  Li  Li3  1  0.493  0.489  0.247  1.0
  Ga  Ga4  1  0.647  0.987  0.250  1.0
  Ga  Ga5  1  0.853  0.487  0.250  1.0
  Ga  Ga6  1  0.353  0.013  0.750  1.0
  Ga  Ga7  1  0.147  0.513  0.750  1.0
  Si  Si8  1  0.660  0.777  0.952  1.0
  Si  Si9  1  0.660  0.203  0.548  1.0
  Si  Si10  1  0.160  0.297  0.452  1.0
  Si  Si11  1  0.340  0.797  0.452  1.0
  Si  Si12  1  0.840  0.703  0.548  1.0
  Si  Si13  1  0.160  0.723  0.048  1.0
  Si  Si14  1  0.840  0.277  0.952  1.0
  Si  Si15  1  0.340  0.223  0.048  1.0
  O  O16  1  0.990  0.698  0.116  1.0
  O  O17  1  0.168  0.790  0.865  1.0
  O  O18  1  0.668  0.710  0.135  1.0
  O  O19  1  0.832  0.210  0.135  1.0
  O  O20  1  0.332  0.290  0.865  1.0
  O  O21  1  0.666  0.267  0.365  1.0
  O  O22  1  0.166  0.233  0.635  1.0
  O  O23  1  0.334  0.733  0.635  1.0
  O  O24  1  0.834  0.767  0.365  1.0
  O  O25  1  0.265  0.466  0.108  1.0
  O  O26  1  0.490  0.802  0.884  1.0
  O  O27  1  0.010  0.302  0.884  1.0
  O  O28  1  0.726  0.910  0.604  1.0
  O  O29  1  0.226  0.590  0.396  1.0
  O  O30  1  0.274  0.090  0.396  1.0
  O  O31  1  0.774  0.410  0.604  1.0
  O  O32  1  0.735  0.534  0.892  1.0
  O  O33  1  0.765  0.034  0.892  1.0
  O  O34  1  0.495  0.229  0.622  1.0
  O  O35  1  0.235  0.966  0.108  1.0
  O  O36  1  0.005  0.729  0.622  1.0
  O  O37  1  0.505  0.771  0.378  1.0
  O  O38  1  0.995  0.271  0.378  1.0
  O  O39  1  0.510  0.198  0.116  1.0
[/CIF]
.