The structure described by Ho2Cu(SiO3)4 crystallizes in the triclinic P-1 space group. Ho(1) is bonded in a 7-coordinate geometry to one O(1), one O(4), one O(5), two equivalent O(3), and two equivalent O(6) atoms. Cu(1) is bonded in a square co-planar geometry to two equivalent O(1) and two equivalent O(4) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(2), one O(4), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. There are six inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to one Ho(1), one Cu(1), and one Si(1) atom. In the second O site, O(2) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a 3-coordinate geometry to two equivalent Ho(1) and one Si(1) atom. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one Ho(1), one Cu(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Ho(1), one Si(1), and one Si(2) atom. In the sixth O site, O(6) is bonded in a distorted trigonal planar geometry to two equivalent Ho(1) and one Si(2) atom. is represented by the CIF card [CIF]
data_Ho2Cu(SiO3)4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.815
_cell_length_b   7.086
_cell_length_c   7.822
_cell_angle_alpha   114.552
_cell_angle_beta   86.435
_cell_angle_gamma   102.947
_symmetry_Int_Tables_number   1
_cell_volume   236.416
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.963  0.772  0.551  1.0
  Ho  Ho1  1  0.037  0.228  0.449  1.0
  Cu  Cu2  1  0.000  0.000  0.000  1.0
  Si  Si3  1  0.425  0.611  0.796  1.0
  Si  Si4  1  0.575  0.389  0.204  1.0
  Si  Si5  1  0.545  0.178  0.786  1.0
  Si  Si6  1  0.455  0.822  0.214  1.0
  O  O7  1  0.734  0.765  0.804  1.0
  O  O8  1  0.266  0.235  0.196  1.0
  O  O9  1  0.712  0.298  0.994  1.0
  O  O10  1  0.288  0.702  0.006  1.0
  O  O11  1  0.780  0.424  0.376  1.0
  O  O12  1  0.220  0.576  0.624  1.0
  O  O13  1  0.742  0.990  0.206  1.0
  O  O14  1  0.258  0.010  0.794  1.0
  O  O15  1  0.442  0.358  0.735  1.0
  O  O16  1  0.558  0.642  0.265  1.0
  O  O17  1  0.766  0.073  0.625  1.0
  O  O18  1  0.234  0.927  0.375  1.0
[/CIF]
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The structure described by Ho2Cu(SiO3)4 crystallizes in the triclinic P-1 space group. Ho(1) is bonded in a 7-coordinate geometry to one O(1), one O(4), one O(5), two equivalent O(3), and two equivalent O(6) atoms. Cu(1) is bonded in a square co-planar geometry to two equivalent O(1) and two equivalent O(4) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(2), one O(4), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. There are six inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to one Ho(1), one Cu(1), and one Si(1) atom. In the second O site, O(2) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a 3-coordinate geometry to two equivalent Ho(1) and one Si(1) atom. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one Ho(1), one Cu(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Ho(1), one Si(1), and one Si(2) atom. In the sixth O site, O(6) is bonded in a distorted trigonal planar geometry to two equivalent Ho(1) and one Si(2) atom. is represented by the CIF card [CIF]
data_Ho2Cu(SiO3)4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.815
_cell_length_b   7.086
_cell_length_c   7.822
_cell_angle_alpha   114.552
_cell_angle_beta   86.435
_cell_angle_gamma   102.947
_symmetry_Int_Tables_number   1
_cell_volume   236.416
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.963  0.772  0.551  1.0
  Ho  Ho1  1  0.037  0.228  0.449  1.0
  Cu  Cu2  1  0.000  0.000  0.000  1.0
  Si  Si3  1  0.425  0.611  0.796  1.0
  Si  Si4  1  0.575  0.389  0.204  1.0
  Si  Si5  1  0.545  0.178  0.786  1.0
  Si  Si6  1  0.455  0.822  0.214  1.0
  O  O7  1  0.734  0.765  0.804  1.0
  O  O8  1  0.266  0.235  0.196  1.0
  O  O9  1  0.712  0.298  0.994  1.0
  O  O10  1  0.288  0.702  0.006  1.0
  O  O11  1  0.780  0.424  0.376  1.0
  O  O12  1  0.220  0.576  0.624  1.0
  O  O13  1  0.742  0.990  0.206  1.0
  O  O14  1  0.258  0.010  0.794  1.0
  O  O15  1  0.442  0.358  0.735  1.0
  O  O16  1  0.558  0.642  0.265  1.0
  O  O17  1  0.766  0.073  0.625  1.0
  O  O18  1  0.234  0.927  0.375  1.0
[/CIF]
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