The compound described by Ga3NO3 is Spinel-like structured and crystallizes in the trigonal R-3m space group. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent N(1) and four equivalent O(1) atoms to form GaN2O4 octahedra that share corners with six equivalent Ga(3)NO3 tetrahedra, edges with two equivalent Ga(2)O6 octahedra, and edges with four equivalent Ga(1)N2O4 octahedra. In the second Ga site, Ga(2) is bonded to six equivalent O(1) atoms to form GaO6 octahedra that share corners with six equivalent Ga(3)NO3 tetrahedra and edges with six equivalent Ga(1)N2O4 octahedra. In the third Ga site, Ga(3) is bonded to one N(1) and three equivalent O(1) atoms to form GaNO3 tetrahedra that share corners with three equivalent Ga(2)O6 octahedra and corners with nine equivalent Ga(1)N2O4 octahedra. The corner-sharing octahedral tilt angles range from 55-60°. N(1) is bonded to one Ga(3) and three equivalent Ga(1) atoms to form distorted corner-sharing NGa4 tetrahedra. O(1) is bonded in a rectangular see-saw-like geometry to one Ga(2), one Ga(3), and two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_Ga3NO3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.978
_cell_length_b   5.978
_cell_length_c   5.978
_cell_angle_alpha   59.291
_cell_angle_beta   59.291
_cell_angle_gamma   59.291
_symmetry_Int_Tables_number   1
_cell_volume   148.629
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.000  0.500  1.0
  Ga  Ga1  1  0.500  0.500  0.500  1.0
  Ga  Ga2  1  0.137  0.137  0.137  1.0
  Ga  Ga3  1  0.500  0.500  0.000  1.0
  Ga  Ga4  1  0.863  0.863  0.863  1.0
  Ga  Ga5  1  0.000  0.500  0.500  1.0
  N  N6  1  0.733  0.733  0.733  1.0
  N  N7  1  0.267  0.267  0.267  1.0
  O  O8  1  0.740  0.740  0.261  1.0
  O  O9  1  0.740  0.261  0.740  1.0
  O  O10  1  0.261  0.740  0.740  1.0
  O  O11  1  0.739  0.260  0.260  1.0
  O  O12  1  0.260  0.260  0.739  1.0
  O  O13  1  0.260  0.739  0.260  1.0
[/CIF]
.
The compound described by Ga3NO3 is Spinel-like structured and crystallizes in the trigonal R-3m space group. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent N(1) and four equivalent O(1) atoms to form GaN2O4 octahedra that share corners with six equivalent Ga(3)NO3 tetrahedra, edges with two equivalent Ga(2)O6 octahedra, and edges with four equivalent Ga(1)N2O4 octahedra. In the second Ga site, Ga(2) is bonded to six equivalent O(1) atoms to form GaO6 octahedra that share corners with six equivalent Ga(3)NO3 tetrahedra and edges with six equivalent Ga(1)N2O4 octahedra. In the third Ga site, Ga(3) is bonded to one N(1) and three equivalent O(1) atoms to form GaNO3 tetrahedra that share corners with three equivalent Ga(2)O6 octahedra and corners with nine equivalent Ga(1)N2O4 octahedra. The corner-sharing octahedral tilt angles range from 55-60°. N(1) is bonded to one Ga(3) and three equivalent Ga(1) atoms to form distorted corner-sharing NGa4 tetrahedra. O(1) is bonded in a rectangular see-saw-like geometry to one Ga(2), one Ga(3), and two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_Ga3NO3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.978
_cell_length_b   5.978
_cell_length_c   5.978
_cell_angle_alpha   59.291
_cell_angle_beta   59.291
_cell_angle_gamma   59.291
_symmetry_Int_Tables_number   1
_cell_volume   148.629
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.000  0.500  1.0
  Ga  Ga1  1  0.500  0.500  0.500  1.0
  Ga  Ga2  1  0.137  0.137  0.137  1.0
  Ga  Ga3  1  0.500  0.500  0.000  1.0
  Ga  Ga4  1  0.863  0.863  0.863  1.0
  Ga  Ga5  1  0.000  0.500  0.500  1.0
  N  N6  1  0.733  0.733  0.733  1.0
  N  N7  1  0.267  0.267  0.267  1.0
  O  O8  1  0.740  0.740  0.261  1.0
  O  O9  1  0.740  0.261  0.740  1.0
  O  O10  1  0.261  0.740  0.740  1.0
  O  O11  1  0.739  0.260  0.260  1.0
  O  O12  1  0.260  0.260  0.739  1.0
  O  O13  1  0.260  0.739  0.260  1.0
[/CIF]
.