The compound described by DyIr2Si2 crystallizes in the tetragonal P4/nmm space group. Dy(1) is bonded in a 16-coordinate geometry to four equivalent Ir(1), four equivalent Ir(2), four equivalent Si(1), and four equivalent Si(2) atoms. There are two inequivalent Ir sites. In the first Ir site, Ir(1) is bonded to four equivalent Dy(1) and four equivalent Si(2) atoms to form distorted IrDy4Si4 tetrahedra that share corners with twelve equivalent Si(1)Dy4Ir4 tetrahedra, edges with two equivalent Si(1)Dy4Ir4 tetrahedra, edges with four equivalent Ir(1)Dy4Si4 tetrahedra, and faces with four equivalent Ir(1)Dy4Si4 tetrahedra. In the second Ir site, Ir(2) is bonded in a 9-coordinate geometry to four equivalent Dy(1), one Si(2), and four equivalent Si(1) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to four equivalent Dy(1) and four equivalent Ir(2) atoms to form distorted SiDy4Ir4 tetrahedra that share corners with twelve equivalent Ir(1)Dy4Si4 tetrahedra, edges with two equivalent Ir(1)Dy4Si4 tetrahedra, edges with four equivalent Si(1)Dy4Ir4 tetrahedra, and faces with four equivalent Si(1)Dy4Ir4 tetrahedra. In the second Si site, Si(2) is bonded in a 5-coordinate geometry to four equivalent Dy(1), one Ir(2), and four equivalent Ir(1) atoms. is represented by the CIF card [CIF]
data_Dy(SiIr)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.075
_cell_length_b   4.075
_cell_length_c   9.717
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   161.340
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Dy  Dy0  1  0.750  0.750  0.253  1.0
  Dy  Dy1  1  0.250  0.250  0.747  1.0
  Si  Si2  1  0.750  0.250  0.500  1.0
  Si  Si3  1  0.250  0.750  0.500  1.0
  Si  Si4  1  0.750  0.750  0.869  1.0
  Si  Si5  1  0.250  0.250  0.131  1.0
  Ir  Ir6  1  0.750  0.250  1.000  1.0
  Ir  Ir7  1  0.250  0.750  1.000  1.0
  Ir  Ir8  1  0.750  0.750  0.629  1.0
  Ir  Ir9  1  0.250  0.250  0.371  1.0
[/CIF]
.
The compound described by DyIr2Si2 crystallizes in the tetragonal P4/nmm space group. Dy(1) is bonded in a 16-coordinate geometry to four equivalent Ir(1), four equivalent Ir(2), four equivalent Si(1), and four equivalent Si(2) atoms. There are two inequivalent Ir sites. In the first Ir site, Ir(1) is bonded to four equivalent Dy(1) and four equivalent Si(2) atoms to form distorted IrDy4Si4 tetrahedra that share corners with twelve equivalent Si(1)Dy4Ir4 tetrahedra, edges with two equivalent Si(1)Dy4Ir4 tetrahedra, edges with four equivalent Ir(1)Dy4Si4 tetrahedra, and faces with four equivalent Ir(1)Dy4Si4 tetrahedra. In the second Ir site, Ir(2) is bonded in a 9-coordinate geometry to four equivalent Dy(1), one Si(2), and four equivalent Si(1) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to four equivalent Dy(1) and four equivalent Ir(2) atoms to form distorted SiDy4Ir4 tetrahedra that share corners with twelve equivalent Ir(1)Dy4Si4 tetrahedra, edges with two equivalent Ir(1)Dy4Si4 tetrahedra, edges with four equivalent Si(1)Dy4Ir4 tetrahedra, and faces with four equivalent Si(1)Dy4Ir4 tetrahedra. In the second Si site, Si(2) is bonded in a 5-coordinate geometry to four equivalent Dy(1), one Ir(2), and four equivalent Ir(1) atoms. is represented by the CIF card [CIF]
data_Dy(SiIr)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.075
_cell_length_b   4.075
_cell_length_c   9.717
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   161.340
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Dy  Dy0  1  0.750  0.750  0.253  1.0
  Dy  Dy1  1  0.250  0.250  0.747  1.0
  Si  Si2  1  0.750  0.250  0.500  1.0
  Si  Si3  1  0.250  0.750  0.500  1.0
  Si  Si4  1  0.750  0.750  0.869  1.0
  Si  Si5  1  0.250  0.250  0.131  1.0
  Ir  Ir6  1  0.750  0.250  1.000  1.0
  Ir  Ir7  1  0.250  0.750  1.000  1.0
  Ir  Ir8  1  0.750  0.750  0.629  1.0
  Ir  Ir9  1  0.250  0.250  0.371  1.0
[/CIF]
.