The material described by Ga6SnTe10 crystallizes in the monoclinic C2 space group. There are six inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one Te(2), one Te(3), one Te(4), and one Te(7) atom to form GaTe4 tetrahedra that share  a cornercorner with one Ga(4)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra, corners with two equivalent Ga(2)Te4 tetrahedra, corners with two equivalent Ga(3)Te4 tetrahedra, and  an edgeedge with one Sn(1)Te6 octahedra. In the second Ga site, Ga(2) is bonded to one Te(3), one Te(4), one Te(6), and one Te(8) atom to form GaTe4 tetrahedra that share  a cornercorner with one Sn(1)Te6 octahedra,  a cornercorner with one Ga(3)Te4 tetrahedra,  a cornercorner with one Ga(4)Te4 tetrahedra,  a cornercorner with one Ga(5)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra, and corners with two equivalent Ga(1)Te4 tetrahedra. The corner-sharing octahedral tilt angles are 70°. In the third Ga site, Ga(3) is bonded to one Te(1), one Te(2), one Te(7), and one Te(8) atom to form GaTe4 tetrahedra that share  a cornercorner with one Sn(1)Te6 octahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(3)Te4 tetrahedra, corners with two equivalent Ga(1)Te4 tetrahedra,  an edgeedge with one Sn(1)Te6 octahedra, and  an edgeedge with one Ga(4)Te4 tetrahedra. The corner-sharing octahedral tilt angles are 58°. In the fourth Ga site, Ga(4) is bonded to one Te(10), one Te(2), one Te(5), and one Te(8) atom to form GaTe4 tetrahedra that share  a cornercorner with one Ga(1)Te4 tetrahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(5)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra,  an edgeedge with one Sn(1)Te6 octahedra, and  an edgeedge with one Ga(3)Te4 tetrahedra. In the fifth Ga site, Ga(5) is bonded to one Te(5), one Te(6), and two equivalent Te(9) atoms to form GaTe4 tetrahedra that share  a cornercorner with one Sn(1)Te6 octahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(4)Te4 tetrahedra, corners with two equivalent Ga(6)Te4 tetrahedra, and  an edgeedge with one Ga(5)Te4 tetrahedra. The corner-sharing octahedral tilt angles are 57°. In the sixth Ga site, Ga(6) is bonded to one Te(10), one Te(11), one Te(4), and one Te(9) atom to form GaTe4 tetrahedra that share  a cornercorner with one Sn(1)Te6 octahedra,  a cornercorner with one Ga(1)Te4 tetrahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(4)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra, corners with two equivalent Ga(5)Te4 tetrahedra, and  an edgeedge with one Sn(1)Te6 octahedra. The corner-sharing octahedral tilt angles are 69°. Sn(1) is bonded to one Te(1), one Te(10), one Te(11), one Te(3), one Te(5), and one Te(7) atom to form distorted SnTe6 octahedra that share corners with two equivalent Sn(1)Te6 octahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(3)Te4 tetrahedra,  a cornercorner with one Ga(5)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra,  an edgeedge with one Ga(1)Te4 tetrahedra,  an edgeedge with one Ga(3)Te4 tetrahedra,  an edgeedge with one Ga(4)Te4 tetrahedra, and  an edgeedge with one Ga(6)Te4 tetrahedra. The corner-sharing octahedral tilt angles range from 23-24°. There are eleven inequivalent Te sites. In the first Te site, Te(5) is bonded in a distorted L-shaped geometry to one Ga(4), one Ga(5), and one Sn(1) atom. In the second Te site, Te(6) is bonded in an L-shaped geometry to one Ga(2) and one Ga(5) atom. In the third Te site, Te(7) is bonded in a 3-coordinate geometry to one Ga(1), one Ga(3), and one Sn(1) atom. In the fourth Te site, Te(8) is bonded in a distorted T-shaped geometry to one Ga(2), one Ga(3), and one Ga(4) atom. In the fifth Te site, Te(9) is bonded in a distorted T-shaped geometry to one Ga(6) and two equivalent Ga(5) atoms. In the sixth Te site, Te(10) is bonded in a 3-coordinate geometry to one Ga(4), one Ga(6), and one Sn(1) atom. In the seventh Te site, Te(11) is bonded in a 4-coordinate geometry to two equivalent Ga(6) and two equivalent Sn(1) atoms. In the eighth Te site, Te(1) is bonded in a distorted L-shaped geometry to two equivalent Ga(3) and two equivalent Sn(1) atoms. In the ninth Te site, Te(2) is bonded in a distorted T-shaped geometry to one Ga(1), one Ga(3), and one Ga(4) atom. In the tenth Te site, Te(3) is bonded in a distorted trigonal non-coplanar geometry to one Ga(1), one Ga(2), and one Sn(1) atom. In the eleventh Te site, Te(4) is bonded in a trigonal non-coplanar geometry to one Ga(1), one Ga(2), and one Ga(6) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga6SnTe10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.457
_cell_length_b   10.457
_cell_length_c   10.471
_cell_angle_alpha   89.863
_cell_angle_beta   89.863
_cell_angle_gamma   89.439
_symmetry_Int_Tables_number   1
_cell_volume   1144.835
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.574  0.841  0.878  1.0
  Ga  Ga1  1  0.874  0.572  0.840  1.0
  Ga  Ga2  1  0.256  0.656  0.829  1.0
  Ga  Ga3  1  0.170  0.342  0.745  1.0
  Ga  Ga4  1  0.827  0.258  0.662  1.0
  Ga  Ga5  1  0.839  0.877  0.575  1.0
  Ga  Ga6  1  0.123  0.161  0.425  1.0
  Ga  Ga7  1  0.742  0.173  0.338  1.0
  Ga  Ga8  1  0.658  0.830  0.255  1.0
  Ga  Ga9  1  0.344  0.744  0.171  1.0
  Ga  Ga10  1  0.428  0.126  0.160  1.0
  Ga  Ga11  1  0.159  0.426  0.122  1.0
  Sn  Sn12  1  0.262  0.004  0.746  1.0
  Sn  Sn13  1  0.996  0.738  0.254  1.0
  Te  Te14  1  0.174  0.826  0.000  1.0
  Te  Te15  1  0.331  0.428  0.929  1.0
  Te  Te16  1  0.502  0.083  0.917  1.0
  Te  Te17  1  0.831  0.830  0.831  1.0
  Te  Te18  1  0.001  0.176  0.830  1.0
  Te  Te19  1  0.681  0.441  0.750  1.0
  Te  Te20  1  0.438  0.755  0.680  1.0
  Te  Te21  1  0.071  0.571  0.671  1.0
  Te  Te22  1  0.672  0.071  0.570  1.0
  Te  Te23  1  0.321  0.243  0.563  1.0
  Te  Te24  1  0.082  0.918  0.500  1.0
  Te  Te25  1  0.757  0.679  0.437  1.0
  Te  Te26  1  0.929  0.328  0.430  1.0
  Te  Te27  1  0.429  0.929  0.329  1.0
  Te  Te28  1  0.245  0.562  0.320  1.0
  Te  Te29  1  0.559  0.319  0.250  1.0
  Te  Te30  1  0.824  0.999  0.170  1.0
  Te  Te31  1  0.170  0.169  0.169  1.0
  Te  Te32  1  0.917  0.498  0.083  1.0
  Te  Te33  1  0.572  0.669  0.071  1.0
[/CIF]
.
The material described by Ga6SnTe10 crystallizes in the monoclinic C2 space group. There are six inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one Te(2), one Te(3), one Te(4), and one Te(7) atom to form GaTe4 tetrahedra that share  a cornercorner with one Ga(4)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra, corners with two equivalent Ga(2)Te4 tetrahedra, corners with two equivalent Ga(3)Te4 tetrahedra, and  an edgeedge with one Sn(1)Te6 octahedra. In the second Ga site, Ga(2) is bonded to one Te(3), one Te(4), one Te(6), and one Te(8) atom to form GaTe4 tetrahedra that share  a cornercorner with one Sn(1)Te6 octahedra,  a cornercorner with one Ga(3)Te4 tetrahedra,  a cornercorner with one Ga(4)Te4 tetrahedra,  a cornercorner with one Ga(5)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra, and corners with two equivalent Ga(1)Te4 tetrahedra. The corner-sharing octahedral tilt angles are 70°. In the third Ga site, Ga(3) is bonded to one Te(1), one Te(2), one Te(7), and one Te(8) atom to form GaTe4 tetrahedra that share  a cornercorner with one Sn(1)Te6 octahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(3)Te4 tetrahedra, corners with two equivalent Ga(1)Te4 tetrahedra,  an edgeedge with one Sn(1)Te6 octahedra, and  an edgeedge with one Ga(4)Te4 tetrahedra. The corner-sharing octahedral tilt angles are 58°. In the fourth Ga site, Ga(4) is bonded to one Te(10), one Te(2), one Te(5), and one Te(8) atom to form GaTe4 tetrahedra that share  a cornercorner with one Ga(1)Te4 tetrahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(5)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra,  an edgeedge with one Sn(1)Te6 octahedra, and  an edgeedge with one Ga(3)Te4 tetrahedra. In the fifth Ga site, Ga(5) is bonded to one Te(5), one Te(6), and two equivalent Te(9) atoms to form GaTe4 tetrahedra that share  a cornercorner with one Sn(1)Te6 octahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(4)Te4 tetrahedra, corners with two equivalent Ga(6)Te4 tetrahedra, and  an edgeedge with one Ga(5)Te4 tetrahedra. The corner-sharing octahedral tilt angles are 57°. In the sixth Ga site, Ga(6) is bonded to one Te(10), one Te(11), one Te(4), and one Te(9) atom to form GaTe4 tetrahedra that share  a cornercorner with one Sn(1)Te6 octahedra,  a cornercorner with one Ga(1)Te4 tetrahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(4)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra, corners with two equivalent Ga(5)Te4 tetrahedra, and  an edgeedge with one Sn(1)Te6 octahedra. The corner-sharing octahedral tilt angles are 69°. Sn(1) is bonded to one Te(1), one Te(10), one Te(11), one Te(3), one Te(5), and one Te(7) atom to form distorted SnTe6 octahedra that share corners with two equivalent Sn(1)Te6 octahedra,  a cornercorner with one Ga(2)Te4 tetrahedra,  a cornercorner with one Ga(3)Te4 tetrahedra,  a cornercorner with one Ga(5)Te4 tetrahedra,  a cornercorner with one Ga(6)Te4 tetrahedra,  an edgeedge with one Ga(1)Te4 tetrahedra,  an edgeedge with one Ga(3)Te4 tetrahedra,  an edgeedge with one Ga(4)Te4 tetrahedra, and  an edgeedge with one Ga(6)Te4 tetrahedra. The corner-sharing octahedral tilt angles range from 23-24°. There are eleven inequivalent Te sites. In the first Te site, Te(5) is bonded in a distorted L-shaped geometry to one Ga(4), one Ga(5), and one Sn(1) atom. In the second Te site, Te(6) is bonded in an L-shaped geometry to one Ga(2) and one Ga(5) atom. In the third Te site, Te(7) is bonded in a 3-coordinate geometry to one Ga(1), one Ga(3), and one Sn(1) atom. In the fourth Te site, Te(8) is bonded in a distorted T-shaped geometry to one Ga(2), one Ga(3), and one Ga(4) atom. In the fifth Te site, Te(9) is bonded in a distorted T-shaped geometry to one Ga(6) and two equivalent Ga(5) atoms. In the sixth Te site, Te(10) is bonded in a 3-coordinate geometry to one Ga(4), one Ga(6), and one Sn(1) atom. In the seventh Te site, Te(11) is bonded in a 4-coordinate geometry to two equivalent Ga(6) and two equivalent Sn(1) atoms. In the eighth Te site, Te(1) is bonded in a distorted L-shaped geometry to two equivalent Ga(3) and two equivalent Sn(1) atoms. In the ninth Te site, Te(2) is bonded in a distorted T-shaped geometry to one Ga(1), one Ga(3), and one Ga(4) atom. In the tenth Te site, Te(3) is bonded in a distorted trigonal non-coplanar geometry to one Ga(1), one Ga(2), and one Sn(1) atom. In the eleventh Te site, Te(4) is bonded in a trigonal non-coplanar geometry to one Ga(1), one Ga(2), and one Ga(6) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga6SnTe10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.457
_cell_length_b   10.457
_cell_length_c   10.471
_cell_angle_alpha   89.863
_cell_angle_beta   89.863
_cell_angle_gamma   89.439
_symmetry_Int_Tables_number   1
_cell_volume   1144.835
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.574  0.841  0.878  1.0
  Ga  Ga1  1  0.874  0.572  0.840  1.0
  Ga  Ga2  1  0.256  0.656  0.829  1.0
  Ga  Ga3  1  0.170  0.342  0.745  1.0
  Ga  Ga4  1  0.827  0.258  0.662  1.0
  Ga  Ga5  1  0.839  0.877  0.575  1.0
  Ga  Ga6  1  0.123  0.161  0.425  1.0
  Ga  Ga7  1  0.742  0.173  0.338  1.0
  Ga  Ga8  1  0.658  0.830  0.255  1.0
  Ga  Ga9  1  0.344  0.744  0.171  1.0
  Ga  Ga10  1  0.428  0.126  0.160  1.0
  Ga  Ga11  1  0.159  0.426  0.122  1.0
  Sn  Sn12  1  0.262  0.004  0.746  1.0
  Sn  Sn13  1  0.996  0.738  0.254  1.0
  Te  Te14  1  0.174  0.826  0.000  1.0
  Te  Te15  1  0.331  0.428  0.929  1.0
  Te  Te16  1  0.502  0.083  0.917  1.0
  Te  Te17  1  0.831  0.830  0.831  1.0
  Te  Te18  1  0.001  0.176  0.830  1.0
  Te  Te19  1  0.681  0.441  0.750  1.0
  Te  Te20  1  0.438  0.755  0.680  1.0
  Te  Te21  1  0.071  0.571  0.671  1.0
  Te  Te22  1  0.672  0.071  0.570  1.0
  Te  Te23  1  0.321  0.243  0.563  1.0
  Te  Te24  1  0.082  0.918  0.500  1.0
  Te  Te25  1  0.757  0.679  0.437  1.0
  Te  Te26  1  0.929  0.328  0.430  1.0
  Te  Te27  1  0.429  0.929  0.329  1.0
  Te  Te28  1  0.245  0.562  0.320  1.0
  Te  Te29  1  0.559  0.319  0.250  1.0
  Te  Te30  1  0.824  0.999  0.170  1.0
  Te  Te31  1  0.170  0.169  0.169  1.0
  Te  Te32  1  0.917  0.498  0.083  1.0
  Te  Te33  1  0.572  0.669  0.071  1.0
[/CIF]
.