The structure described by (MoS)4GaSiS4 is Cuprite-derived structured and crystallizes in the cubic F-43m space group. The structure consists of four MoS clusters inside a GaSiS4 framework. In each MoS cluster, Mo(1) is bonded in a 3-coordinate geometry to three equivalent S(2) atoms. S(2) is bonded in a 3-coordinate geometry to three equivalent Mo(1) atoms. In the GaSiS4 framework, Ga(1) is bonded to four equivalent S(1) atoms to form GaS4 tetrahedra that share corners with four equivalent Si(1)S4 tetrahedra. Si(1) is bonded to four equivalent S(1) atoms to form SiS4 tetrahedra that share corners with four equivalent Ga(1)S4 tetrahedra. S(1) is bonded in a distorted linear geometry to one Ga(1) and one Si(1) atom. is represented by the CIF file [CIF]
data_GaSi(MoS2)4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.496
_cell_length_b   7.496
_cell_length_c   7.496
_cell_angle_alpha   60.000
_cell_angle_beta   60.000
_cell_angle_gamma   60.000
_symmetry_Int_Tables_number   1
_cell_volume   297.791
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.000  0.000  0.000  1.0
  Si  Si1  1  0.250  0.250  0.250  1.0
  Mo  Mo2  1  0.406  0.782  0.406  1.0
  Mo  Mo3  1  0.782  0.406  0.406  1.0
  Mo  Mo4  1  0.406  0.406  0.406  1.0
  Mo  Mo5  1  0.406  0.406  0.782  1.0
  S  S6  1  0.136  0.136  0.136  1.0
  S  S7  1  0.136  0.591  0.136  1.0
  S  S8  1  0.591  0.136  0.136  1.0
  S  S9  1  0.136  0.136  0.591  1.0
  S  S10  1  0.624  0.624  0.127  1.0
  S  S11  1  0.624  0.624  0.624  1.0
  S  S12  1  0.127  0.624  0.624  1.0
  S  S13  1  0.624  0.127  0.624  1.0
[/CIF]
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The structure described by (MoS)4GaSiS4 is Cuprite-derived structured and crystallizes in the cubic F-43m space group. The structure consists of four MoS clusters inside a GaSiS4 framework. In each MoS cluster, Mo(1) is bonded in a 3-coordinate geometry to three equivalent S(2) atoms. S(2) is bonded in a 3-coordinate geometry to three equivalent Mo(1) atoms. In the GaSiS4 framework, Ga(1) is bonded to four equivalent S(1) atoms to form GaS4 tetrahedra that share corners with four equivalent Si(1)S4 tetrahedra. Si(1) is bonded to four equivalent S(1) atoms to form SiS4 tetrahedra that share corners with four equivalent Ga(1)S4 tetrahedra. S(1) is bonded in a distorted linear geometry to one Ga(1) and one Si(1) atom. is represented by the CIF file [CIF]
data_GaSi(MoS2)4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.496
_cell_length_b   7.496
_cell_length_c   7.496
_cell_angle_alpha   60.000
_cell_angle_beta   60.000
_cell_angle_gamma   60.000
_symmetry_Int_Tables_number   1
_cell_volume   297.791
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.000  0.000  0.000  1.0
  Si  Si1  1  0.250  0.250  0.250  1.0
  Mo  Mo2  1  0.406  0.782  0.406  1.0
  Mo  Mo3  1  0.782  0.406  0.406  1.0
  Mo  Mo4  1  0.406  0.406  0.406  1.0
  Mo  Mo5  1  0.406  0.406  0.782  1.0
  S  S6  1  0.136  0.136  0.136  1.0
  S  S7  1  0.136  0.591  0.136  1.0
  S  S8  1  0.591  0.136  0.136  1.0
  S  S9  1  0.136  0.136  0.591  1.0
  S  S10  1  0.624  0.624  0.127  1.0
  S  S11  1  0.624  0.624  0.624  1.0
  S  S12  1  0.127  0.624  0.624  1.0
  S  S13  1  0.624  0.127  0.624  1.0
[/CIF]
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