The structure described by SiO2 is Low Tridymite-like structured and crystallizes in the triclinic P-1 space group. There are eight inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(16), one O(4), one O(7), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(15), one O(2), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(13), one O(4), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(14), one O(3), one O(5), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the fifth Si site, Si(5) is bonded to one O(11), one O(15), one O(2), and one O(3) atom to form corner-sharing SiO4 tetrahedra. In the sixth Si site, Si(6) is bonded to one O(10), one O(12), one O(6), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the seventh Si site, Si(7) is bonded to one O(10), one O(11), one O(12), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the eighth Si site, Si(8) is bonded to one O(13), one O(14), one O(16), and one O(6) atom to form corner-sharing SiO4 tetrahedra. There are sixteen inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(5) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(5) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(4) atom. In the sixth O site, O(6) is bonded in a bent 150 degrees geometry to one Si(6) and one Si(8) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(6) atom. In the ninth O site, O(9) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(7) atom. In the tenth O site, O(10) is bonded in a bent 150 degrees geometry to one Si(6) and one Si(7) atom. In the eleventh O site, O(11) is bonded in a bent 150 degrees geometry to one Si(5) and one Si(7) atom. In the twelfth O site, O(12) is bonded in a bent 150 degrees geometry to one Si(6) and one Si(7) atom. In the thirteenth O site, O(13) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(8) atom. In the fourteenth O site, O(14) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(8) atom. In the fifteenth O site, O(15) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(5) atom. In the sixteenth O site, O(16) is bonded in a distorted bent 150 degrees geometry to one Si(1) and one Si(8) atom. is represented by the CIF card [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.379
_cell_length_b   11.399
_cell_length_c   11.566
_cell_angle_alpha   104.673
_cell_angle_beta   94.349
_cell_angle_gamma   96.216
_symmetry_Int_Tables_number   1
_cell_volume   930.099
_cell_formula_units_Z   16
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.702  0.442  0.122  1.0
  Si  Si1  1  0.593  0.857  0.356  1.0
  Si  Si2  1  0.435  0.639  0.142  1.0
  Si  Si3  1  0.959  0.763  0.429  1.0
  Si  Si4  1  0.407  0.143  0.644  1.0
  Si  Si5  1  0.666  0.135  0.443  1.0
  Si  Si6  1  0.220  0.410  0.429  1.0
  Si  Si7  1  0.565  0.361  0.858  1.0
  Si  Si8  1  0.385  0.638  0.645  1.0
  Si  Si9  1  0.298  0.558  0.878  1.0
  Si  Si10  1  0.041  0.237  0.571  1.0
  Si  Si11  1  0.920  0.462  0.758  1.0
  Si  Si12  1  0.615  0.362  0.355  1.0
  Si  Si13  1  0.080  0.538  0.242  1.0
  Si  Si14  1  0.334  0.865  0.557  1.0
  Si  Si15  1  0.780  0.590  0.571  1.0
  O  O16  1  0.493  0.776  0.227  1.0
  O  O17  1  0.402  0.001  0.642  1.0
  O  O18  1  0.133  0.865  0.490  1.0
  O  O19  1  0.867  0.135  0.510  1.0
  O  O20  1  0.367  0.649  0.009  1.0
  O  O21  1  0.202  0.174  0.622  1.0
  O  O22  1  0.097  0.444  0.325  1.0
  O  O23  1  0.611  0.567  0.138  1.0
  O  O24  1  0.903  0.556  0.675  1.0
  O  O25  1  0.890  0.700  0.531  1.0
  O  O26  1  0.110  0.300  0.469  1.0
  O  O27  1  0.355  0.625  0.777  1.0
  O  O28  1  0.737  0.472  0.456  1.0
  O  O29  1  0.598  0.999  0.358  1.0
  O  O30  1  0.633  0.351  0.991  1.0
  O  O31  1  0.325  0.768  0.637  1.0
  O  O32  1  0.263  0.528  0.544  1.0
  O  O33  1  0.404  0.366  0.378  1.0
  O  O34  1  0.507  0.224  0.773  1.0
  O  O35  1  0.273  0.565  0.193  1.0
  O  O36  1  0.023  0.664  0.320  1.0
  O  O37  1  0.596  0.634  0.622  1.0
  O  O38  1  0.798  0.826  0.378  1.0
  O  O39  1  0.477  0.826  0.460  1.0
  O  O40  1  0.922  0.476  0.133  1.0
  O  O41  1  0.389  0.433  0.862  1.0
  O  O42  1  0.977  0.336  0.680  1.0
  O  O43  1  0.645  0.375  0.223  1.0
  O  O44  1  0.078  0.524  0.867  1.0
  O  O45  1  0.675  0.232  0.363  1.0
  O  O46  1  0.727  0.435  0.807  1.0
  O  O47  1  0.523  0.174  0.540  1.0
[/CIF]
.
The structure described by SiO2 is Low Tridymite-like structured and crystallizes in the triclinic P-1 space group. There are eight inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(16), one O(4), one O(7), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(15), one O(2), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(13), one O(4), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(14), one O(3), one O(5), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the fifth Si site, Si(5) is bonded to one O(11), one O(15), one O(2), and one O(3) atom to form corner-sharing SiO4 tetrahedra. In the sixth Si site, Si(6) is bonded to one O(10), one O(12), one O(6), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the seventh Si site, Si(7) is bonded to one O(10), one O(11), one O(12), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the eighth Si site, Si(8) is bonded to one O(13), one O(14), one O(16), and one O(6) atom to form corner-sharing SiO4 tetrahedra. There are sixteen inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(5) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(5) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(4) atom. In the sixth O site, O(6) is bonded in a bent 150 degrees geometry to one Si(6) and one Si(8) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(6) atom. In the ninth O site, O(9) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(7) atom. In the tenth O site, O(10) is bonded in a bent 150 degrees geometry to one Si(6) and one Si(7) atom. In the eleventh O site, O(11) is bonded in a bent 150 degrees geometry to one Si(5) and one Si(7) atom. In the twelfth O site, O(12) is bonded in a bent 150 degrees geometry to one Si(6) and one Si(7) atom. In the thirteenth O site, O(13) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(8) atom. In the fourteenth O site, O(14) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(8) atom. In the fifteenth O site, O(15) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(5) atom. In the sixteenth O site, O(16) is bonded in a distorted bent 150 degrees geometry to one Si(1) and one Si(8) atom. is represented by the CIF card [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.379
_cell_length_b   11.399
_cell_length_c   11.566
_cell_angle_alpha   104.673
_cell_angle_beta   94.349
_cell_angle_gamma   96.216
_symmetry_Int_Tables_number   1
_cell_volume   930.099
_cell_formula_units_Z   16
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.702  0.442  0.122  1.0
  Si  Si1  1  0.593  0.857  0.356  1.0
  Si  Si2  1  0.435  0.639  0.142  1.0
  Si  Si3  1  0.959  0.763  0.429  1.0
  Si  Si4  1  0.407  0.143  0.644  1.0
  Si  Si5  1  0.666  0.135  0.443  1.0
  Si  Si6  1  0.220  0.410  0.429  1.0
  Si  Si7  1  0.565  0.361  0.858  1.0
  Si  Si8  1  0.385  0.638  0.645  1.0
  Si  Si9  1  0.298  0.558  0.878  1.0
  Si  Si10  1  0.041  0.237  0.571  1.0
  Si  Si11  1  0.920  0.462  0.758  1.0
  Si  Si12  1  0.615  0.362  0.355  1.0
  Si  Si13  1  0.080  0.538  0.242  1.0
  Si  Si14  1  0.334  0.865  0.557  1.0
  Si  Si15  1  0.780  0.590  0.571  1.0
  O  O16  1  0.493  0.776  0.227  1.0
  O  O17  1  0.402  0.001  0.642  1.0
  O  O18  1  0.133  0.865  0.490  1.0
  O  O19  1  0.867  0.135  0.510  1.0
  O  O20  1  0.367  0.649  0.009  1.0
  O  O21  1  0.202  0.174  0.622  1.0
  O  O22  1  0.097  0.444  0.325  1.0
  O  O23  1  0.611  0.567  0.138  1.0
  O  O24  1  0.903  0.556  0.675  1.0
  O  O25  1  0.890  0.700  0.531  1.0
  O  O26  1  0.110  0.300  0.469  1.0
  O  O27  1  0.355  0.625  0.777  1.0
  O  O28  1  0.737  0.472  0.456  1.0
  O  O29  1  0.598  0.999  0.358  1.0
  O  O30  1  0.633  0.351  0.991  1.0
  O  O31  1  0.325  0.768  0.637  1.0
  O  O32  1  0.263  0.528  0.544  1.0
  O  O33  1  0.404  0.366  0.378  1.0
  O  O34  1  0.507  0.224  0.773  1.0
  O  O35  1  0.273  0.565  0.193  1.0
  O  O36  1  0.023  0.664  0.320  1.0
  O  O37  1  0.596  0.634  0.622  1.0
  O  O38  1  0.798  0.826  0.378  1.0
  O  O39  1  0.477  0.826  0.460  1.0
  O  O40  1  0.922  0.476  0.133  1.0
  O  O41  1  0.389  0.433  0.862  1.0
  O  O42  1  0.977  0.336  0.680  1.0
  O  O43  1  0.645  0.375  0.223  1.0
  O  O44  1  0.078  0.524  0.867  1.0
  O  O45  1  0.675  0.232  0.363  1.0
  O  O46  1  0.727  0.435  0.807  1.0
  O  O47  1  0.523  0.174  0.540  1.0
[/CIF]
.