The material structure described by InGaZnO4 is Aluminum carbonitride-derived structured and crystallizes in the trigonal R3m space group. Zn(1) is bonded to one O(1) and three equivalent O(4) atoms to form distorted ZnO4 tetrahedra that share corners with three equivalent In(1)O6 octahedra, corners with six equivalent Zn(1)O4 tetrahedra, and corners with three equivalent Ga(1)O5 trigonal bipyramids. The corner-sharing octahedral tilt angles are 61°. In(1) is bonded to three equivalent O(1) and three equivalent O(2) atoms to form InO6 octahedra that share corners with three equivalent Zn(1)O4 tetrahedra, corners with three equivalent Ga(1)O5 trigonal bipyramids, and edges with six equivalent In(1)O6 octahedra. Ga(1) is bonded to one O(2), one O(4), and three equivalent O(3) atoms to form GaO5 trigonal bipyramids that share corners with three equivalent In(1)O6 octahedra, corners with three equivalent Zn(1)O4 tetrahedra, and corners with six equivalent Ga(1)O5 trigonal bipyramids. The corner-sharing octahedral tilt angles are 61°. There are four inequivalent O sites. In the first O site, O(1) is bonded to one Zn(1) and three equivalent In(1) atoms to form distorted OZnIn3 tetrahedra that share corners with three equivalent O(2)In3Ga tetrahedra, corners with three equivalent O(4)Zn3Ga tetrahedra, corners with six equivalent O(1)ZnIn3 tetrahedra, and edges with three equivalent O(2)In3Ga tetrahedra. In the second O site, O(2) is bonded to three equivalent In(1) and one Ga(1) atom to form distorted OIn3Ga tetrahedra that share  a cornercorner with one O(4)Zn3Ga tetrahedra, corners with three equivalent O(1)ZnIn3 tetrahedra, corners with six equivalent O(2)In3Ga tetrahedra, and edges with three equivalent O(1)ZnIn3 tetrahedra. In the third O site, O(3) is bonded in a distorted trigonal planar geometry to three equivalent Ga(1) atoms. In the fourth O site, O(4) is bonded to three equivalent Zn(1) and one Ga(1) atom to form OZn3Ga tetrahedra that share  a cornercorner with one O(2)In3Ga tetrahedra, corners with three equivalent O(1)ZnIn3 tetrahedra, and corners with six equivalent O(4)Zn3Ga tetrahedra. is represented by the CIF card [CIF]
data_ZnInGaO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.927
_cell_length_b   8.927
_cell_length_c   8.927
_cell_angle_alpha   21.699
_cell_angle_beta   21.699
_cell_angle_gamma   21.699
_symmetry_Int_Tables_number   1
_cell_volume   85.225
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Zn  Zn0  1  0.218  0.218  0.218  1.0
  In  In1  1  0.003  0.003  0.003  1.0
  Ga  Ga2  1  0.787  0.787  0.787  1.0
  O  O3  1  0.295  0.295  0.295  1.0
  O  O4  1  0.711  0.711  0.711  1.0
  O  O5  1  0.122  0.122  0.122  1.0
  O  O6  1  0.864  0.864  0.864  1.0
[/CIF]
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The material structure described by InGaZnO4 is Aluminum carbonitride-derived structured and crystallizes in the trigonal R3m space group. Zn(1) is bonded to one O(1) and three equivalent O(4) atoms to form distorted ZnO4 tetrahedra that share corners with three equivalent In(1)O6 octahedra, corners with six equivalent Zn(1)O4 tetrahedra, and corners with three equivalent Ga(1)O5 trigonal bipyramids. The corner-sharing octahedral tilt angles are 61°. In(1) is bonded to three equivalent O(1) and three equivalent O(2) atoms to form InO6 octahedra that share corners with three equivalent Zn(1)O4 tetrahedra, corners with three equivalent Ga(1)O5 trigonal bipyramids, and edges with six equivalent In(1)O6 octahedra. Ga(1) is bonded to one O(2), one O(4), and three equivalent O(3) atoms to form GaO5 trigonal bipyramids that share corners with three equivalent In(1)O6 octahedra, corners with three equivalent Zn(1)O4 tetrahedra, and corners with six equivalent Ga(1)O5 trigonal bipyramids. The corner-sharing octahedral tilt angles are 61°. There are four inequivalent O sites. In the first O site, O(1) is bonded to one Zn(1) and three equivalent In(1) atoms to form distorted OZnIn3 tetrahedra that share corners with three equivalent O(2)In3Ga tetrahedra, corners with three equivalent O(4)Zn3Ga tetrahedra, corners with six equivalent O(1)ZnIn3 tetrahedra, and edges with three equivalent O(2)In3Ga tetrahedra. In the second O site, O(2) is bonded to three equivalent In(1) and one Ga(1) atom to form distorted OIn3Ga tetrahedra that share  a cornercorner with one O(4)Zn3Ga tetrahedra, corners with three equivalent O(1)ZnIn3 tetrahedra, corners with six equivalent O(2)In3Ga tetrahedra, and edges with three equivalent O(1)ZnIn3 tetrahedra. In the third O site, O(3) is bonded in a distorted trigonal planar geometry to three equivalent Ga(1) atoms. In the fourth O site, O(4) is bonded to three equivalent Zn(1) and one Ga(1) atom to form OZn3Ga tetrahedra that share  a cornercorner with one O(2)In3Ga tetrahedra, corners with three equivalent O(1)ZnIn3 tetrahedra, and corners with six equivalent O(4)Zn3Ga tetrahedra. is represented by the CIF card [CIF]
data_ZnInGaO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.927
_cell_length_b   8.927
_cell_length_c   8.927
_cell_angle_alpha   21.699
_cell_angle_beta   21.699
_cell_angle_gamma   21.699
_symmetry_Int_Tables_number   1
_cell_volume   85.225
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Zn  Zn0  1  0.218  0.218  0.218  1.0
  In  In1  1  0.003  0.003  0.003  1.0
  Ga  Ga2  1  0.787  0.787  0.787  1.0
  O  O3  1  0.295  0.295  0.295  1.0
  O  O4  1  0.711  0.711  0.711  1.0
  O  O5  1  0.122  0.122  0.122  1.0
  O  O6  1  0.864  0.864  0.864  1.0
[/CIF]
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