The compound described by InGaP2 is Enargite-like structured and crystallizes in the trigonal R3m space group. In(1) is bonded to one P(2) and three equivalent P(1) atoms to form InP4 tetrahedra that share corners with six equivalent In(1)P4 tetrahedra and corners with six equivalent Ga(1)P4 tetrahedra. Ga(1) is bonded to one P(1) and three equivalent P(2) atoms to form GaP4 tetrahedra that share corners with six equivalent In(1)P4 tetrahedra and corners with six equivalent Ga(1)P4 tetrahedra. There are two inequivalent P sites. In the first P site, P(1) is bonded to three equivalent In(1) and one Ga(1) atom to form PIn3Ga tetrahedra that share corners with six equivalent P(1)In3Ga tetrahedra and corners with six equivalent P(2)InGa3 tetrahedra. In the second P site, P(2) is bonded to one In(1) and three equivalent Ga(1) atoms to form PInGa3 tetrahedra that share corners with six equivalent P(1)In3Ga tetrahedra and corners with six equivalent P(2)InGa3 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_InGaP2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.035
_cell_length_b   7.035
_cell_length_c   7.035
_cell_angle_alpha   33.497
_cell_angle_beta   33.497
_cell_angle_gamma   33.497
_symmetry_Int_Tables_number   1
_cell_volume   94.462
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.500  0.500  0.500  1.0
  Ga  Ga1  1  0.000  0.000  0.000  1.0
  P  P2  1  0.120  0.120  0.120  1.0
  P  P3  1  0.630  0.630  0.630  1.0
[/CIF]
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The compound described by InGaP2 is Enargite-like structured and crystallizes in the trigonal R3m space group. In(1) is bonded to one P(2) and three equivalent P(1) atoms to form InP4 tetrahedra that share corners with six equivalent In(1)P4 tetrahedra and corners with six equivalent Ga(1)P4 tetrahedra. Ga(1) is bonded to one P(1) and three equivalent P(2) atoms to form GaP4 tetrahedra that share corners with six equivalent In(1)P4 tetrahedra and corners with six equivalent Ga(1)P4 tetrahedra. There are two inequivalent P sites. In the first P site, P(1) is bonded to three equivalent In(1) and one Ga(1) atom to form PIn3Ga tetrahedra that share corners with six equivalent P(1)In3Ga tetrahedra and corners with six equivalent P(2)InGa3 tetrahedra. In the second P site, P(2) is bonded to one In(1) and three equivalent Ga(1) atoms to form PInGa3 tetrahedra that share corners with six equivalent P(1)In3Ga tetrahedra and corners with six equivalent P(2)InGa3 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_InGaP2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.035
_cell_length_b   7.035
_cell_length_c   7.035
_cell_angle_alpha   33.497
_cell_angle_beta   33.497
_cell_angle_gamma   33.497
_symmetry_Int_Tables_number   1
_cell_volume   94.462
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.500  0.500  0.500  1.0
  Ga  Ga1  1  0.000  0.000  0.000  1.0
  P  P2  1  0.120  0.120  0.120  1.0
  P  P3  1  0.630  0.630  0.630  1.0
[/CIF]
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