The structure described by GaSb2N3 crystallizes in the monoclinic C2/c space group. Ga(1) is bonded to one N(1), one N(2), one N(3), and one N(4) atom to form distorted corner-sharing GaN4 tetrahedra. There are two inequivalent Sb sites. In the first Sb site, Sb(1) is bonded in a distorted T-shaped geometry to one N(2) and two equivalent N(3) atoms. In the second Sb site, Sb(2) is bonded in a 4-coordinate geometry to one N(1), one N(2), one N(3), and one N(4) atom. There are four inequivalent N sites. In the first N site, N(4) is bonded in a distorted see-saw-like geometry to two equivalent Ga(1) and two equivalent Sb(2) atoms. In the second N site, N(1) is bonded in a see-saw-like geometry to two equivalent Ga(1) and two equivalent Sb(2) atoms. In the third N site, N(2) is bonded in a distorted trigonal planar geometry to one Ga(1), one Sb(1), and one Sb(2) atom. In the fourth N site, N(3) is bonded to one Ga(1), one Sb(2), and two equivalent Sb(1) atoms to form distorted edge-sharing NGaSb3 trigonal pyramids. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaSb2N3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.805
_cell_length_b   10.126
_cell_length_c   14.541
_cell_angle_alpha   90.000
_cell_angle_beta   86.601
_cell_angle_gamma   150.703
_symmetry_Int_Tables_number   1
_cell_volume   415.192
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.612  0.354  0.672  1.0
  Ga  Ga1  1  0.388  0.742  0.828  1.0
  Ga  Ga2  1  0.388  0.646  0.328  1.0
  Ga  Ga3  1  0.612  0.258  0.172  1.0
  Sb  Sb4  1  0.434  0.085  0.928  1.0
  Sb  Sb5  1  0.566  0.650  0.572  1.0
  Sb  Sb6  1  0.566  0.915  0.072  1.0
  Sb  Sb7  1  0.434  0.350  0.428  1.0
  Sb  Sb8  1  0.640  0.008  0.642  1.0
  Sb  Sb9  1  0.360  0.368  0.858  1.0
  Sb  Sb10  1  0.360  0.992  0.358  1.0
  Sb  Sb11  1  0.640  0.632  0.142  1.0
  N  N12  1  0.000  0.656  0.750  1.0
  N  N13  1  0.000  0.344  0.250  1.0
  N  N14  1  0.877  0.319  0.637  1.0
  N  N15  1  0.123  0.442  0.863  1.0
  N  N16  1  0.123  0.681  0.363  1.0
  N  N17  1  0.877  0.558  0.137  1.0
  N  N18  1  0.474  0.076  0.070  1.0
  N  N19  1  0.526  0.602  0.430  1.0
  N  N20  1  0.526  0.924  0.930  1.0
  N  N21  1  0.474  0.398  0.570  1.0
  N  N22  1  0.000  0.093  0.750  1.0
  N  N23  1  0.000  0.907  0.250  1.0
[/CIF]
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The structure described by GaSb2N3 crystallizes in the monoclinic C2/c space group. Ga(1) is bonded to one N(1), one N(2), one N(3), and one N(4) atom to form distorted corner-sharing GaN4 tetrahedra. There are two inequivalent Sb sites. In the first Sb site, Sb(1) is bonded in a distorted T-shaped geometry to one N(2) and two equivalent N(3) atoms. In the second Sb site, Sb(2) is bonded in a 4-coordinate geometry to one N(1), one N(2), one N(3), and one N(4) atom. There are four inequivalent N sites. In the first N site, N(4) is bonded in a distorted see-saw-like geometry to two equivalent Ga(1) and two equivalent Sb(2) atoms. In the second N site, N(1) is bonded in a see-saw-like geometry to two equivalent Ga(1) and two equivalent Sb(2) atoms. In the third N site, N(2) is bonded in a distorted trigonal planar geometry to one Ga(1), one Sb(1), and one Sb(2) atom. In the fourth N site, N(3) is bonded to one Ga(1), one Sb(2), and two equivalent Sb(1) atoms to form distorted edge-sharing NGaSb3 trigonal pyramids. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaSb2N3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.805
_cell_length_b   10.126
_cell_length_c   14.541
_cell_angle_alpha   90.000
_cell_angle_beta   86.601
_cell_angle_gamma   150.703
_symmetry_Int_Tables_number   1
_cell_volume   415.192
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.612  0.354  0.672  1.0
  Ga  Ga1  1  0.388  0.742  0.828  1.0
  Ga  Ga2  1  0.388  0.646  0.328  1.0
  Ga  Ga3  1  0.612  0.258  0.172  1.0
  Sb  Sb4  1  0.434  0.085  0.928  1.0
  Sb  Sb5  1  0.566  0.650  0.572  1.0
  Sb  Sb6  1  0.566  0.915  0.072  1.0
  Sb  Sb7  1  0.434  0.350  0.428  1.0
  Sb  Sb8  1  0.640  0.008  0.642  1.0
  Sb  Sb9  1  0.360  0.368  0.858  1.0
  Sb  Sb10  1  0.360  0.992  0.358  1.0
  Sb  Sb11  1  0.640  0.632  0.142  1.0
  N  N12  1  0.000  0.656  0.750  1.0
  N  N13  1  0.000  0.344  0.250  1.0
  N  N14  1  0.877  0.319  0.637  1.0
  N  N15  1  0.123  0.442  0.863  1.0
  N  N16  1  0.123  0.681  0.363  1.0
  N  N17  1  0.877  0.558  0.137  1.0
  N  N18  1  0.474  0.076  0.070  1.0
  N  N19  1  0.526  0.602  0.430  1.0
  N  N20  1  0.526  0.924  0.930  1.0
  N  N21  1  0.474  0.398  0.570  1.0
  N  N22  1  0.000  0.093  0.750  1.0
  N  N23  1  0.000  0.907  0.250  1.0
[/CIF]
.