The material structure described by V2Si4O11 crystallizes in the triclinic P-1 space group. There are two inequivalent V sites. In the first V site, V(1) is bonded in a 2-coordinate geometry to one O(1), one O(11), one O(8), and one O(9) atom. In the second V site, V(2) is bonded in a 2-coordinate geometry to one O(3), one O(7), one O(8), and one O(9) atom. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(10), one O(11), one O(4), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(2), one O(5), one O(6), and one O(7) atom to form distorted corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(10), one O(6), one O(8), and one O(9) atom to form distorted corner-sharing SiO4 tetrahedra. There are eleven inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to one V(1) and one Si(1) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one V(2) and one Si(1) atom. In the fourth O site, O(4) is bonded in a distorted bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the sixth O site, O(6) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(4) atom. In the seventh O site, O(7) is bonded in a 2-coordinate geometry to one V(2) and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted single-bond geometry to one V(1), one V(2), and one Si(4) atom. In the ninth O site, O(9) is bonded in a distorted single-bond geometry to one V(1), one V(2), and one Si(4) atom. In the tenth O site, O(10) is bonded in a distorted bent 120 degrees geometry to one Si(2) and one Si(4) atom. In the eleventh O site, O(11) is bonded in a 2-coordinate geometry to one V(1) and one Si(2) atom. is represented by the CIF file [CIF]
data_V2Si4O11
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.619
_cell_length_b   7.363
_cell_length_c   6.994
_cell_angle_alpha   104.636
_cell_angle_beta   101.290
_cell_angle_gamma   99.470
_symmetry_Int_Tables_number   1
_cell_volume   410.333
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.884  0.386  0.623  1.0
  V  V1  1  0.387  0.386  0.625  1.0
  V  V2  1  0.613  0.614  0.375  1.0
  V  V3  1  0.116  0.614  0.377  1.0
  Si  Si4  1  0.231  0.023  0.381  1.0
  Si  Si5  1  0.958  0.224  0.219  1.0
  Si  Si6  1  0.520  0.221  0.221  1.0
  Si  Si7  1  0.771  0.604  0.982  1.0
  Si  Si8  1  0.229  0.396  0.018  1.0
  Si  Si9  1  0.480  0.779  0.779  1.0
  Si  Si10  1  0.042  0.776  0.781  1.0
  Si  Si11  1  0.769  0.977  0.619  1.0
  O  O12  1  0.811  0.161  0.593  1.0
  O  O13  1  0.396  0.057  0.259  1.0
  O  O14  1  0.306  0.160  0.582  1.0
  O  O15  1  0.023  0.058  0.246  1.0
  O  O16  1  0.714  0.185  0.163  1.0
  O  O17  1  0.393  0.285  0.042  1.0
  O  O18  1  0.587  0.374  0.419  1.0
  O  O19  1  0.680  0.445  0.796  1.0
  O  O20  1  0.181  0.429  0.800  1.0
  O  O21  1  0.016  0.297  0.042  1.0
  O  O22  1  0.068  0.373  0.418  1.0
  O  O23  1  0.932  0.627  0.582  1.0
  O  O24  1  0.984  0.703  0.958  1.0
  O  O25  1  0.819  0.571  0.200  1.0
  O  O26  1  0.320  0.555  0.204  1.0
  O  O27  1  0.413  0.626  0.581  1.0
  O  O28  1  0.607  0.715  0.958  1.0
  O  O29  1  0.286  0.815  0.837  1.0
  O  O30  1  0.977  0.942  0.754  1.0
  O  O31  1  0.694  0.840  0.418  1.0
  O  O32  1  0.604  0.943  0.741  1.0
  O  O33  1  0.189  0.839  0.407  1.0
[/CIF]
.
The material structure described by V2Si4O11 crystallizes in the triclinic P-1 space group. There are two inequivalent V sites. In the first V site, V(1) is bonded in a 2-coordinate geometry to one O(1), one O(11), one O(8), and one O(9) atom. In the second V site, V(2) is bonded in a 2-coordinate geometry to one O(3), one O(7), one O(8), and one O(9) atom. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(10), one O(11), one O(4), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(2), one O(5), one O(6), and one O(7) atom to form distorted corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(10), one O(6), one O(8), and one O(9) atom to form distorted corner-sharing SiO4 tetrahedra. There are eleven inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to one V(1) and one Si(1) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one V(2) and one Si(1) atom. In the fourth O site, O(4) is bonded in a distorted bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the sixth O site, O(6) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(4) atom. In the seventh O site, O(7) is bonded in a 2-coordinate geometry to one V(2) and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted single-bond geometry to one V(1), one V(2), and one Si(4) atom. In the ninth O site, O(9) is bonded in a distorted single-bond geometry to one V(1), one V(2), and one Si(4) atom. In the tenth O site, O(10) is bonded in a distorted bent 120 degrees geometry to one Si(2) and one Si(4) atom. In the eleventh O site, O(11) is bonded in a 2-coordinate geometry to one V(1) and one Si(2) atom. is represented by the CIF file [CIF]
data_V2Si4O11
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.619
_cell_length_b   7.363
_cell_length_c   6.994
_cell_angle_alpha   104.636
_cell_angle_beta   101.290
_cell_angle_gamma   99.470
_symmetry_Int_Tables_number   1
_cell_volume   410.333
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.884  0.386  0.623  1.0
  V  V1  1  0.387  0.386  0.625  1.0
  V  V2  1  0.613  0.614  0.375  1.0
  V  V3  1  0.116  0.614  0.377  1.0
  Si  Si4  1  0.231  0.023  0.381  1.0
  Si  Si5  1  0.958  0.224  0.219  1.0
  Si  Si6  1  0.520  0.221  0.221  1.0
  Si  Si7  1  0.771  0.604  0.982  1.0
  Si  Si8  1  0.229  0.396  0.018  1.0
  Si  Si9  1  0.480  0.779  0.779  1.0
  Si  Si10  1  0.042  0.776  0.781  1.0
  Si  Si11  1  0.769  0.977  0.619  1.0
  O  O12  1  0.811  0.161  0.593  1.0
  O  O13  1  0.396  0.057  0.259  1.0
  O  O14  1  0.306  0.160  0.582  1.0
  O  O15  1  0.023  0.058  0.246  1.0
  O  O16  1  0.714  0.185  0.163  1.0
  O  O17  1  0.393  0.285  0.042  1.0
  O  O18  1  0.587  0.374  0.419  1.0
  O  O19  1  0.680  0.445  0.796  1.0
  O  O20  1  0.181  0.429  0.800  1.0
  O  O21  1  0.016  0.297  0.042  1.0
  O  O22  1  0.068  0.373  0.418  1.0
  O  O23  1  0.932  0.627  0.582  1.0
  O  O24  1  0.984  0.703  0.958  1.0
  O  O25  1  0.819  0.571  0.200  1.0
  O  O26  1  0.320  0.555  0.204  1.0
  O  O27  1  0.413  0.626  0.581  1.0
  O  O28  1  0.607  0.715  0.958  1.0
  O  O29  1  0.286  0.815  0.837  1.0
  O  O30  1  0.977  0.942  0.754  1.0
  O  O31  1  0.694  0.840  0.418  1.0
  O  O32  1  0.604  0.943  0.741  1.0
  O  O33  1  0.189  0.839  0.407  1.0
[/CIF]
.