The material described by SiO2 crystallizes in the monoclinic P2/c space group. Si(1) is bonded in a distorted square co-planar geometry to one O(1), one O(2), one O(3), and one O(4) atom. There are four inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. In the second O site, O(2) is bonded in a linear geometry to two equivalent Si(1) atoms. In the third O site, O(3) is bonded in a linear geometry to two equivalent Si(1) atoms. In the fourth O site, O(4) is bonded in a linear geometry to two equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.684
_cell_length_b   4.683
_cell_length_c   8.328
_cell_angle_alpha   66.737
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   167.833
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.774  0.764  0.944  1.0
  Si  Si1  1  0.774  0.236  0.556  1.0
  Si  Si2  1  0.226  0.764  0.444  1.0
  Si  Si3  1  0.226  0.236  0.056  1.0
  O  O4  1  0.331  0.000  0.250  1.0
  O  O5  1  0.000  0.000  0.000  1.0
  O  O6  1  0.500  0.500  0.000  1.0
  O  O7  1  0.000  0.500  0.500  1.0
  O  O8  1  0.669  0.000  0.750  1.0
  O  O9  1  0.500  0.500  0.500  1.0
  O  O10  1  0.000  0.500  0.000  1.0
  O  O11  1  0.000  0.000  0.500  1.0
[/CIF]
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The material described by SiO2 crystallizes in the monoclinic P2/c space group. Si(1) is bonded in a distorted square co-planar geometry to one O(1), one O(2), one O(3), and one O(4) atom. There are four inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. In the second O site, O(2) is bonded in a linear geometry to two equivalent Si(1) atoms. In the third O site, O(3) is bonded in a linear geometry to two equivalent Si(1) atoms. In the fourth O site, O(4) is bonded in a linear geometry to two equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.684
_cell_length_b   4.683
_cell_length_c   8.328
_cell_angle_alpha   66.737
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   167.833
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.774  0.764  0.944  1.0
  Si  Si1  1  0.774  0.236  0.556  1.0
  Si  Si2  1  0.226  0.764  0.444  1.0
  Si  Si3  1  0.226  0.236  0.056  1.0
  O  O4  1  0.331  0.000  0.250  1.0
  O  O5  1  0.000  0.000  0.000  1.0
  O  O6  1  0.500  0.500  0.000  1.0
  O  O7  1  0.000  0.500  0.500  1.0
  O  O8  1  0.669  0.000  0.750  1.0
  O  O9  1  0.500  0.500  0.500  1.0
  O  O10  1  0.000  0.500  0.000  1.0
  O  O11  1  0.000  0.000  0.500  1.0
[/CIF]
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