The compound described by Th2SbSe2 crystallizes in the tetragonal P4/mmm space group. The structure is zero-dimensional and consists of one Th2SbSe2 cluster. Th(1) is bonded in a distorted linear geometry to one Sb(1) and one Se(1) atom. Sb(1) is bonded in a distorted linear geometry to two equivalent Th(1) atoms. Se(1) is bonded in a single-bond geometry to one Th(1) atom. is represented by the CIF file [CIF]
data_Th2SbSe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.320
_cell_length_b   3.320
_cell_length_c   16.620
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   183.173
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Th  Th0  1  0.500  0.500  0.193  1.0
  Th  Th1  1  0.500  0.500  0.807  1.0
  Sb  Sb2  1  0.500  0.500  0.000  1.0
  Se  Se3  1  0.500  0.500  0.642  1.0
  Se  Se4  1  0.500  0.500  0.358  1.0
[/CIF]
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The compound described by Th2SbSe2 crystallizes in the tetragonal P4/mmm space group. The structure is zero-dimensional and consists of one Th2SbSe2 cluster. Th(1) is bonded in a distorted linear geometry to one Sb(1) and one Se(1) atom. Sb(1) is bonded in a distorted linear geometry to two equivalent Th(1) atoms. Se(1) is bonded in a single-bond geometry to one Th(1) atom. is represented by the CIF file [CIF]
data_Th2SbSe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.320
_cell_length_b   3.320
_cell_length_c   16.620
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   183.173
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Th  Th0  1  0.500  0.500  0.193  1.0
  Th  Th1  1  0.500  0.500  0.807  1.0
  Sb  Sb2  1  0.500  0.500  0.000  1.0
  Se  Se3  1  0.500  0.500  0.642  1.0
  Se  Se4  1  0.500  0.500  0.358  1.0
[/CIF]
.