The crystal structure described by Ga2S3 crystallizes in the monoclinic Cc space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(2), one S(3), and two equivalent S(1) atoms to form corner-sharing GaS4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(1), one S(3), and two equivalent S(2) atoms to form corner-sharing GaS4 tetrahedra. There are three inequivalent S sites. In the first S site, S(1) is bonded in a trigonal non-coplanar geometry to one Ga(2) and two equivalent Ga(1) atoms. In the second S site, S(2) is bonded in a trigonal non-coplanar geometry to one Ga(1) and two equivalent Ga(2) atoms. In the third S site, S(3) is bonded in a water-like geometry to one Ga(1) and one Ga(2) atom. is represented by the CIF file [CIF]
data_Ga2S3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.455
_cell_length_b   6.477
_cell_length_c   7.053
_cell_angle_alpha   116.535
_cell_angle_beta   90.000
_cell_angle_gamma   119.891
_symmetry_Int_Tables_number   1
_cell_volume   219.106
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.137  0.406  0.620  1.0
  Ga  Ga1  1  0.269  0.406  0.120  1.0
  Ga  Ga2  1  0.447  0.088  0.629  1.0
  Ga  Ga3  1  0.641  0.088  0.129  1.0
  S  S4  1  0.429  0.680  0.503  1.0
  S  S5  1  0.251  0.680  0.003  1.0
  S  S6  1  0.761  0.347  0.512  1.0
  S  S7  1  0.586  0.347  0.012  1.0
  S  S8  1  0.911  0.001  0.986  1.0
  S  S9  1  0.090  0.001  0.486  1.0
[/CIF]
.
The crystal structure described by Ga2S3 crystallizes in the monoclinic Cc space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(2), one S(3), and two equivalent S(1) atoms to form corner-sharing GaS4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(1), one S(3), and two equivalent S(2) atoms to form corner-sharing GaS4 tetrahedra. There are three inequivalent S sites. In the first S site, S(1) is bonded in a trigonal non-coplanar geometry to one Ga(2) and two equivalent Ga(1) atoms. In the second S site, S(2) is bonded in a trigonal non-coplanar geometry to one Ga(1) and two equivalent Ga(2) atoms. In the third S site, S(3) is bonded in a water-like geometry to one Ga(1) and one Ga(2) atom. is represented by the CIF file [CIF]
data_Ga2S3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.455
_cell_length_b   6.477
_cell_length_c   7.053
_cell_angle_alpha   116.535
_cell_angle_beta   90.000
_cell_angle_gamma   119.891
_symmetry_Int_Tables_number   1
_cell_volume   219.106
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.137  0.406  0.620  1.0
  Ga  Ga1  1  0.269  0.406  0.120  1.0
  Ga  Ga2  1  0.447  0.088  0.629  1.0
  Ga  Ga3  1  0.641  0.088  0.129  1.0
  S  S4  1  0.429  0.680  0.503  1.0
  S  S5  1  0.251  0.680  0.003  1.0
  S  S6  1  0.761  0.347  0.512  1.0
  S  S7  1  0.586  0.347  0.012  1.0
  S  S8  1  0.911  0.001  0.986  1.0
  S  S9  1  0.090  0.001  0.486  1.0
[/CIF]
.