The material structure described by Eu3GaO6 crystallizes in the orthorhombic Cmc2_1 space group. There are two inequivalent Eu sites. In the first Eu site, Eu(1) is bonded to one O(4), two equivalent O(1), two equivalent O(2), and two equivalent O(3) atoms to form distorted EuO7 pentagonal bipyramids that share  a cornercorner with one Eu(2)O7 pentagonal bipyramid, corners with four equivalent Eu(1)O7 pentagonal bipyramids, corners with three equivalent Ga(1)O4 tetrahedra, edges with two equivalent Eu(1)O7 pentagonal bipyramids, edges with three equivalent Eu(2)O7 pentagonal bipyramids,  an edgeedge with one Ga(1)O4 tetrahedra, and  a faceface with one Eu(1)O7 pentagonal bipyramid. In the second Eu site, Eu(2) is bonded to one O(4), two equivalent O(1), and four equivalent O(2) atoms to form distorted EuO7 pentagonal bipyramids that share corners with two equivalent Eu(1)O7 pentagonal bipyramids,  a cornercorner with one Ga(1)O4 tetrahedra, edges with two equivalent Eu(2)O7 pentagonal bipyramids, edges with six equivalent Eu(1)O7 pentagonal bipyramids, and  an edgeedge with one Ga(1)O4 tetrahedra. Ga(1) is bonded to one O(3), one O(4), and two equivalent O(1) atoms to form GaO4 tetrahedra that share  a cornercorner with one Eu(2)O7 pentagonal bipyramid, corners with six equivalent Eu(1)O7 pentagonal bipyramids,  an edgeedge with one Eu(2)O7 pentagonal bipyramid, and edges with two equivalent Eu(1)O7 pentagonal bipyramids. There are four inequivalent O sites. In the first O site, O(1) is bonded to one Eu(2), two equivalent Eu(1), and one Ga(1) atom to form distorted OEu3Ga trigonal pyramids that share corners with two equivalent O(4)Eu3Ga tetrahedra, corners with six equivalent O(2)Eu4 tetrahedra, corners with two equivalent O(1)Eu3Ga trigonal pyramids,  an edgeedge with one O(4)Eu3Ga tetrahedra,  an edgeedge with one O(2)Eu4 tetrahedra, and  an edgeedge with one O(1)Eu3Ga trigonal pyramid. In the second O site, O(2) is bonded to two equivalent Eu(1) and two equivalent Eu(2) atoms to form OEu4 tetrahedra that share corners with two equivalent O(2)Eu4 tetrahedra, corners with four equivalent O(4)Eu3Ga tetrahedra, corners with six equivalent O(1)Eu3Ga trigonal pyramids, edges with three equivalent O(2)Eu4 tetrahedra, and  an edgeedge with one O(1)Eu3Ga trigonal pyramid. In the third O site, O(3) is bonded in a 5-coordinate geometry to four equivalent Eu(1) and one Ga(1) atom. In the fourth O site, O(4) is bonded to one Eu(2), two equivalent Eu(1), and one Ga(1) atom to form distorted OEu3Ga tetrahedra that share corners with eight equivalent O(2)Eu4 tetrahedra, corners with four equivalent O(1)Eu3Ga trigonal pyramids, and edges with two equivalent O(1)Eu3Ga trigonal pyramids. is represented by the Crystallographic Information File (CIF) [CIF]
data_Eu3GaO6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.365
_cell_length_b   7.365
_cell_length_c   5.549
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   102.980
_symmetry_Int_Tables_number   1
_cell_volume   293.272
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Eu  Eu0  1  0.299  0.086  0.469  1.0
  Eu  Eu1  1  0.914  0.701  0.469  1.0
  Eu  Eu2  1  0.701  0.914  0.969  1.0
  Eu  Eu3  1  0.086  0.299  0.969  1.0
  Eu  Eu4  1  0.394  0.606  0.430  1.0
  Eu  Eu5  1  0.606  0.394  0.930  1.0
  Ga  Ga6  1  0.192  0.808  0.008  1.0
  Ga  Ga7  1  0.808  0.192  0.508  1.0
  O  O8  1  0.418  0.891  0.180  1.0
  O  O9  1  0.109  0.582  0.180  1.0
  O  O10  1  0.582  0.109  0.680  1.0
  O  O11  1  0.891  0.418  0.680  1.0
  O  O12  1  0.357  0.325  0.202  1.0
  O  O13  1  0.675  0.643  0.202  1.0
  O  O14  1  0.643  0.675  0.702  1.0
  O  O15  1  0.325  0.357  0.702  1.0
  O  O16  1  0.044  0.956  0.144  1.0
  O  O17  1  0.956  0.044  0.644  1.0
  O  O18  1  0.213  0.787  0.674  1.0
  O  O19  1  0.787  0.213  0.174  1.0
[/CIF]
.
The material structure described by Eu3GaO6 crystallizes in the orthorhombic Cmc2_1 space group. There are two inequivalent Eu sites. In the first Eu site, Eu(1) is bonded to one O(4), two equivalent O(1), two equivalent O(2), and two equivalent O(3) atoms to form distorted EuO7 pentagonal bipyramids that share  a cornercorner with one Eu(2)O7 pentagonal bipyramid, corners with four equivalent Eu(1)O7 pentagonal bipyramids, corners with three equivalent Ga(1)O4 tetrahedra, edges with two equivalent Eu(1)O7 pentagonal bipyramids, edges with three equivalent Eu(2)O7 pentagonal bipyramids,  an edgeedge with one Ga(1)O4 tetrahedra, and  a faceface with one Eu(1)O7 pentagonal bipyramid. In the second Eu site, Eu(2) is bonded to one O(4), two equivalent O(1), and four equivalent O(2) atoms to form distorted EuO7 pentagonal bipyramids that share corners with two equivalent Eu(1)O7 pentagonal bipyramids,  a cornercorner with one Ga(1)O4 tetrahedra, edges with two equivalent Eu(2)O7 pentagonal bipyramids, edges with six equivalent Eu(1)O7 pentagonal bipyramids, and  an edgeedge with one Ga(1)O4 tetrahedra. Ga(1) is bonded to one O(3), one O(4), and two equivalent O(1) atoms to form GaO4 tetrahedra that share  a cornercorner with one Eu(2)O7 pentagonal bipyramid, corners with six equivalent Eu(1)O7 pentagonal bipyramids,  an edgeedge with one Eu(2)O7 pentagonal bipyramid, and edges with two equivalent Eu(1)O7 pentagonal bipyramids. There are four inequivalent O sites. In the first O site, O(1) is bonded to one Eu(2), two equivalent Eu(1), and one Ga(1) atom to form distorted OEu3Ga trigonal pyramids that share corners with two equivalent O(4)Eu3Ga tetrahedra, corners with six equivalent O(2)Eu4 tetrahedra, corners with two equivalent O(1)Eu3Ga trigonal pyramids,  an edgeedge with one O(4)Eu3Ga tetrahedra,  an edgeedge with one O(2)Eu4 tetrahedra, and  an edgeedge with one O(1)Eu3Ga trigonal pyramid. In the second O site, O(2) is bonded to two equivalent Eu(1) and two equivalent Eu(2) atoms to form OEu4 tetrahedra that share corners with two equivalent O(2)Eu4 tetrahedra, corners with four equivalent O(4)Eu3Ga tetrahedra, corners with six equivalent O(1)Eu3Ga trigonal pyramids, edges with three equivalent O(2)Eu4 tetrahedra, and  an edgeedge with one O(1)Eu3Ga trigonal pyramid. In the third O site, O(3) is bonded in a 5-coordinate geometry to four equivalent Eu(1) and one Ga(1) atom. In the fourth O site, O(4) is bonded to one Eu(2), two equivalent Eu(1), and one Ga(1) atom to form distorted OEu3Ga tetrahedra that share corners with eight equivalent O(2)Eu4 tetrahedra, corners with four equivalent O(1)Eu3Ga trigonal pyramids, and edges with two equivalent O(1)Eu3Ga trigonal pyramids. is represented by the Crystallographic Information File (CIF) [CIF]
data_Eu3GaO6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.365
_cell_length_b   7.365
_cell_length_c   5.549
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   102.980
_symmetry_Int_Tables_number   1
_cell_volume   293.272
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Eu  Eu0  1  0.299  0.086  0.469  1.0
  Eu  Eu1  1  0.914  0.701  0.469  1.0
  Eu  Eu2  1  0.701  0.914  0.969  1.0
  Eu  Eu3  1  0.086  0.299  0.969  1.0
  Eu  Eu4  1  0.394  0.606  0.430  1.0
  Eu  Eu5  1  0.606  0.394  0.930  1.0
  Ga  Ga6  1  0.192  0.808  0.008  1.0
  Ga  Ga7  1  0.808  0.192  0.508  1.0
  O  O8  1  0.418  0.891  0.180  1.0
  O  O9  1  0.109  0.582  0.180  1.0
  O  O10  1  0.582  0.109  0.680  1.0
  O  O11  1  0.891  0.418  0.680  1.0
  O  O12  1  0.357  0.325  0.202  1.0
  O  O13  1  0.675  0.643  0.202  1.0
  O  O14  1  0.643  0.675  0.702  1.0
  O  O15  1  0.325  0.357  0.702  1.0
  O  O16  1  0.044  0.956  0.144  1.0
  O  O17  1  0.956  0.044  0.644  1.0
  O  O18  1  0.213  0.787  0.674  1.0
  O  O19  1  0.787  0.213  0.174  1.0
[/CIF]
.