The material structure described by Ho3Si4 crystallizes in the monoclinic Cm space group. There are twelve inequivalent Ho sites. In the first Ho site, Ho(1) is bonded to two equivalent Si(1), two equivalent Si(15), four equivalent Si(10), and four equivalent Si(16) atoms to form a mixture of distorted face and edge-sharing HoSi12 cuboctahedra. In the second Ho site, Ho(2) is bonded to two equivalent Si(13), two equivalent Si(2), and four equivalent Si(11) atoms to form a mixture of distorted face, corner, and edge-sharing HoSi8 hexagonal bipyramids. In the third Ho site, Ho(3) is bonded to two equivalent Si(14), two equivalent Si(3), and four equivalent Si(12) atoms to form a mixture of distorted face, corner, and edge-sharing HoSi8 hexagonal bipyramids. In the fourth Ho site, Ho(4) is bonded in a 10-coordinate geometry to two equivalent Si(4), four equivalent Si(13), and four equivalent Si(7) atoms. In the fifth Ho site, Ho(5) is bonded in a 10-coordinate geometry to two equivalent Si(5), four equivalent Si(14), and four equivalent Si(8) atoms. In the sixth Ho site, Ho(6) is bonded to two equivalent Si(16), two equivalent Si(6), four equivalent Si(15), and four equivalent Si(9) atoms to form a mixture of distorted face and edge-sharing HoSi12 cuboctahedra. In the seventh Ho site, Ho(7) is bonded in a 7-coordinate geometry to one Si(1), two equivalent Si(7), and four equivalent Si(4) atoms. In the eighth Ho site, Ho(8) is bonded in a 7-coordinate geometry to one Si(2), two equivalent Si(8), and four equivalent Si(5) atoms. In the ninth Ho site, Ho(9) is bonded in a 7-coordinate geometry to one Si(3), two equivalent Si(9), and four equivalent Si(6) atoms. In the tenth Ho site, Ho(10) is bonded in a 7-coordinate geometry to one Si(4), two equivalent Si(10), and four equivalent Si(1) atoms. In the eleventh Ho site, Ho(11) is bonded in a 7-coordinate geometry to one Si(5), two equivalent Si(11), and four equivalent Si(2) atoms. In the twelfth Ho site, Ho(12) is bonded in a 7-coordinate geometry to one Si(6), two equivalent Si(12), and four equivalent Si(3) atoms. There are sixteen inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to one Ho(7), two equivalent Ho(1), four equivalent Ho(10), and two equivalent Si(10) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Ho(8), two equivalent Ho(2), four equivalent Ho(11), and two equivalent Si(11) atoms. In the third Si site, Si(3) is bonded in a 9-coordinate geometry to one Ho(9), two equivalent Ho(3), four equivalent Ho(12), and two equivalent Si(12) atoms. In the fourth Si site, Si(4) is bonded in a 9-coordinate geometry to one Ho(10), two equivalent Ho(4), four equivalent Ho(7), and two equivalent Si(7) atoms. In the fifth Si site, Si(5) is bonded in a 9-coordinate geometry to one Ho(11), two equivalent Ho(5), four equivalent Ho(8), and two equivalent Si(8) atoms. In the sixth Si site, Si(6) is bonded in a 9-coordinate geometry to one Ho(12), two equivalent Ho(6), four equivalent Ho(9), and two equivalent Si(9) atoms. In the seventh Si site, Si(7) is bonded in a 9-coordinate geometry to two equivalent Ho(7), four equivalent Ho(4), one Si(13), and two equivalent Si(4) atoms. In the eighth Si site, Si(8) is bonded in a 9-coordinate geometry to two equivalent Ho(8), four equivalent Ho(5), one Si(14), and two equivalent Si(5) atoms. In the ninth Si site, Si(9) is bonded in a 9-coordinate geometry to two equivalent Ho(9), four equivalent Ho(6), one Si(15), and two equivalent Si(6) atoms. In the tenth Si site, Si(10) is bonded in a 9-coordinate geometry to two equivalent Ho(10), four equivalent Ho(1), one Si(16), and two equivalent Si(1) atoms. In the eleventh Si site, Si(11) is bonded in a 8-coordinate geometry to two equivalent Ho(11), four equivalent Ho(2), and two equivalent Si(2) atoms. In the twelfth Si site, Si(12) is bonded in a 8-coordinate geometry to two equivalent Ho(12), four equivalent Ho(3), and two equivalent Si(3) atoms. In the thirteenth Si site, Si(13) is bonded in a 7-coordinate geometry to two equivalent Ho(2), four equivalent Ho(4), and one Si(7) atom. In the fourteenth Si site, Si(14) is bonded in a 7-coordinate geometry to two equivalent Ho(3), four equivalent Ho(5), and one Si(8) atom. In the fifteenth Si site, Si(15) is bonded in a 9-coordinate geometry to two equivalent Ho(1), four equivalent Ho(6), one Si(9), and two equivalent Si(16) atoms. In the sixteenth Si site, Si(16) is bonded in a 9-coordinate geometry to two equivalent Ho(6), four equivalent Ho(1), one Si(10), and two equivalent Si(15) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ho3Si4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   36.354
_cell_length_b   36.354
_cell_length_c   3.869
_cell_angle_alpha   89.596
_cell_angle_beta   89.596
_cell_angle_gamma   6.518
_symmetry_Int_Tables_number   1
_cell_volume   580.415
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.477  0.477  0.251  1.0
  Ho  Ho1  1  0.809  0.809  0.246  1.0
  Ho  Ho2  1  0.143  0.143  0.246  1.0
  Ho  Ho3  1  0.857  0.857  0.766  1.0
  Ho  Ho4  1  0.190  0.190  0.766  1.0
  Ho  Ho5  1  0.523  0.523  0.750  1.0
  Ho  Ho6  1  0.900  0.900  0.251  1.0
  Ho  Ho7  1  0.234  0.234  0.250  1.0
  Ho  Ho8  1  0.568  0.568  0.249  1.0
  Ho  Ho9  1  0.432  0.432  0.751  1.0
  Ho  Ho10  1  0.766  0.766  0.750  1.0
  Ho  Ho11  1  0.100  0.100  0.751  1.0
  Si  Si12  1  0.940  0.940  0.250  1.0
  Si  Si13  1  0.276  0.276  0.250  1.0
  Si  Si14  1  0.609  0.609  0.251  1.0
  Si  Si15  1  0.391  0.391  0.751  1.0
  Si  Si16  1  0.725  0.725  0.751  1.0
  Si  Si17  1  0.060  0.060  0.750  1.0
  Si  Si18  1  0.371  0.371  0.259  1.0
  Si  Si19  1  0.704  0.704  0.259  1.0
  Si  Si20  1  0.040  0.040  0.252  1.0
  Si  Si21  1  0.960  0.960  0.748  1.0
  Si  Si22  1  0.297  0.297  0.748  1.0
  Si  Si23  1  0.630  0.630  0.747  1.0
  Si  Si24  1  0.338  0.338  0.303  1.0
  Si  Si25  1  0.672  0.672  0.304  1.0
  Si  Si26  1  0.008  0.008  0.249  1.0
  Si  Si27  1  0.991  0.991  0.751  1.0
[/CIF]
.
The material structure described by Ho3Si4 crystallizes in the monoclinic Cm space group. There are twelve inequivalent Ho sites. In the first Ho site, Ho(1) is bonded to two equivalent Si(1), two equivalent Si(15), four equivalent Si(10), and four equivalent Si(16) atoms to form a mixture of distorted face and edge-sharing HoSi12 cuboctahedra. In the second Ho site, Ho(2) is bonded to two equivalent Si(13), two equivalent Si(2), and four equivalent Si(11) atoms to form a mixture of distorted face, corner, and edge-sharing HoSi8 hexagonal bipyramids. In the third Ho site, Ho(3) is bonded to two equivalent Si(14), two equivalent Si(3), and four equivalent Si(12) atoms to form a mixture of distorted face, corner, and edge-sharing HoSi8 hexagonal bipyramids. In the fourth Ho site, Ho(4) is bonded in a 10-coordinate geometry to two equivalent Si(4), four equivalent Si(13), and four equivalent Si(7) atoms. In the fifth Ho site, Ho(5) is bonded in a 10-coordinate geometry to two equivalent Si(5), four equivalent Si(14), and four equivalent Si(8) atoms. In the sixth Ho site, Ho(6) is bonded to two equivalent Si(16), two equivalent Si(6), four equivalent Si(15), and four equivalent Si(9) atoms to form a mixture of distorted face and edge-sharing HoSi12 cuboctahedra. In the seventh Ho site, Ho(7) is bonded in a 7-coordinate geometry to one Si(1), two equivalent Si(7), and four equivalent Si(4) atoms. In the eighth Ho site, Ho(8) is bonded in a 7-coordinate geometry to one Si(2), two equivalent Si(8), and four equivalent Si(5) atoms. In the ninth Ho site, Ho(9) is bonded in a 7-coordinate geometry to one Si(3), two equivalent Si(9), and four equivalent Si(6) atoms. In the tenth Ho site, Ho(10) is bonded in a 7-coordinate geometry to one Si(4), two equivalent Si(10), and four equivalent Si(1) atoms. In the eleventh Ho site, Ho(11) is bonded in a 7-coordinate geometry to one Si(5), two equivalent Si(11), and four equivalent Si(2) atoms. In the twelfth Ho site, Ho(12) is bonded in a 7-coordinate geometry to one Si(6), two equivalent Si(12), and four equivalent Si(3) atoms. There are sixteen inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to one Ho(7), two equivalent Ho(1), four equivalent Ho(10), and two equivalent Si(10) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Ho(8), two equivalent Ho(2), four equivalent Ho(11), and two equivalent Si(11) atoms. In the third Si site, Si(3) is bonded in a 9-coordinate geometry to one Ho(9), two equivalent Ho(3), four equivalent Ho(12), and two equivalent Si(12) atoms. In the fourth Si site, Si(4) is bonded in a 9-coordinate geometry to one Ho(10), two equivalent Ho(4), four equivalent Ho(7), and two equivalent Si(7) atoms. In the fifth Si site, Si(5) is bonded in a 9-coordinate geometry to one Ho(11), two equivalent Ho(5), four equivalent Ho(8), and two equivalent Si(8) atoms. In the sixth Si site, Si(6) is bonded in a 9-coordinate geometry to one Ho(12), two equivalent Ho(6), four equivalent Ho(9), and two equivalent Si(9) atoms. In the seventh Si site, Si(7) is bonded in a 9-coordinate geometry to two equivalent Ho(7), four equivalent Ho(4), one Si(13), and two equivalent Si(4) atoms. In the eighth Si site, Si(8) is bonded in a 9-coordinate geometry to two equivalent Ho(8), four equivalent Ho(5), one Si(14), and two equivalent Si(5) atoms. In the ninth Si site, Si(9) is bonded in a 9-coordinate geometry to two equivalent Ho(9), four equivalent Ho(6), one Si(15), and two equivalent Si(6) atoms. In the tenth Si site, Si(10) is bonded in a 9-coordinate geometry to two equivalent Ho(10), four equivalent Ho(1), one Si(16), and two equivalent Si(1) atoms. In the eleventh Si site, Si(11) is bonded in a 8-coordinate geometry to two equivalent Ho(11), four equivalent Ho(2), and two equivalent Si(2) atoms. In the twelfth Si site, Si(12) is bonded in a 8-coordinate geometry to two equivalent Ho(12), four equivalent Ho(3), and two equivalent Si(3) atoms. In the thirteenth Si site, Si(13) is bonded in a 7-coordinate geometry to two equivalent Ho(2), four equivalent Ho(4), and one Si(7) atom. In the fourteenth Si site, Si(14) is bonded in a 7-coordinate geometry to two equivalent Ho(3), four equivalent Ho(5), and one Si(8) atom. In the fifteenth Si site, Si(15) is bonded in a 9-coordinate geometry to two equivalent Ho(1), four equivalent Ho(6), one Si(9), and two equivalent Si(16) atoms. In the sixteenth Si site, Si(16) is bonded in a 9-coordinate geometry to two equivalent Ho(6), four equivalent Ho(1), one Si(10), and two equivalent Si(15) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ho3Si4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   36.354
_cell_length_b   36.354
_cell_length_c   3.869
_cell_angle_alpha   89.596
_cell_angle_beta   89.596
_cell_angle_gamma   6.518
_symmetry_Int_Tables_number   1
_cell_volume   580.415
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.477  0.477  0.251  1.0
  Ho  Ho1  1  0.809  0.809  0.246  1.0
  Ho  Ho2  1  0.143  0.143  0.246  1.0
  Ho  Ho3  1  0.857  0.857  0.766  1.0
  Ho  Ho4  1  0.190  0.190  0.766  1.0
  Ho  Ho5  1  0.523  0.523  0.750  1.0
  Ho  Ho6  1  0.900  0.900  0.251  1.0
  Ho  Ho7  1  0.234  0.234  0.250  1.0
  Ho  Ho8  1  0.568  0.568  0.249  1.0
  Ho  Ho9  1  0.432  0.432  0.751  1.0
  Ho  Ho10  1  0.766  0.766  0.750  1.0
  Ho  Ho11  1  0.100  0.100  0.751  1.0
  Si  Si12  1  0.940  0.940  0.250  1.0
  Si  Si13  1  0.276  0.276  0.250  1.0
  Si  Si14  1  0.609  0.609  0.251  1.0
  Si  Si15  1  0.391  0.391  0.751  1.0
  Si  Si16  1  0.725  0.725  0.751  1.0
  Si  Si17  1  0.060  0.060  0.750  1.0
  Si  Si18  1  0.371  0.371  0.259  1.0
  Si  Si19  1  0.704  0.704  0.259  1.0
  Si  Si20  1  0.040  0.040  0.252  1.0
  Si  Si21  1  0.960  0.960  0.748  1.0
  Si  Si22  1  0.297  0.297  0.748  1.0
  Si  Si23  1  0.630  0.630  0.747  1.0
  Si  Si24  1  0.338  0.338  0.303  1.0
  Si  Si25  1  0.672  0.672  0.304  1.0
  Si  Si26  1  0.008  0.008  0.249  1.0
  Si  Si27  1  0.991  0.991  0.751  1.0
[/CIF]
.