The compound described by V9GaGe2 crystallizes in the orthorhombic Pmmm space group. There are seven inequivalent V sites. In the first V site, V(1) is bonded in a 6-coordinate geometry to one V(1), one V(2), two equivalent Ga(1), and two equivalent Ge(3) atoms. In the second V site, V(2) is bonded in a 6-coordinate geometry to one V(1), one V(3), two equivalent Ga(1), and two equivalent Ge(2) atoms. In the third V site, V(3) is bonded in a 6-coordinate geometry to one V(2), one V(3), two equivalent Ge(1), and two equivalent Ge(2) atoms. In the fourth V site, V(4) is bonded in a 6-coordinate geometry to two equivalent V(4), one Ga(1), one Ge(1), and two equivalent Ge(2) atoms. In the fifth V site, V(5) is bonded in a 6-coordinate geometry to two equivalent V(5), two equivalent Ga(1), and two equivalent Ge(3) atoms. In the sixth V site, V(6) is bonded in a 6-coordinate geometry to two equivalent V(6), two equivalent Ga(1), one Ge(2), and one Ge(3) atom. In the seventh V site, V(7) is bonded in a 6-coordinate geometry to two equivalent V(7), two equivalent Ge(1), and two equivalent Ge(2) atoms. Ga(1) is bonded to two equivalent V(1), two equivalent V(2), two equivalent V(4), two equivalent V(5), and four equivalent V(6) atoms to form GaV12 cuboctahedra that share  an edgeedge with one Ge(1)V12 cuboctahedra, edges with five equivalent Ga(1)V12 cuboctahedra, faces with four equivalent Ge(2)V12 cuboctahedra, and faces with four equivalent Ge(3)V12 cuboctahedra. There are three inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to four equivalent V(3), four equivalent V(4), and four equivalent V(7) atoms to form GeV12 cuboctahedra that share edges with two equivalent Ga(1)V12 cuboctahedra, edges with four equivalent Ge(1)V12 cuboctahedra, and faces with eight equivalent Ge(2)V12 cuboctahedra. In the second Ge site, Ge(2) is bonded to two equivalent V(2), two equivalent V(3), two equivalent V(6), two equivalent V(7), and four equivalent V(4) atoms to form GeV12 cuboctahedra that share  an edgeedge with one Ge(3)V12 cuboctahedra, edges with five equivalent Ge(2)V12 cuboctahedra, faces with four equivalent Ga(1)V12 cuboctahedra, and faces with four equivalent Ge(1)V12 cuboctahedra. In the third Ge site, Ge(3) is bonded to four equivalent V(1), four equivalent V(5), and four equivalent V(6) atoms to form GeV12 cuboctahedra that share edges with two equivalent Ge(2)V12 cuboctahedra, edges with four equivalent Ge(3)V12 cuboctahedra, and faces with eight equivalent Ga(1)V12 cuboctahedra. is represented by the CIF file [CIF]
data_V9GaGe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.785
_cell_length_b   4.804
_cell_length_c   14.121
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   324.591
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.000  0.500  0.918  1.0
  V  V1  1  0.000  0.500  0.250  1.0
  V  V2  1  0.000  0.500  0.585  1.0
  V  V3  1  0.500  0.244  0.666  1.0
  V  V4  1  0.500  0.242  0.000  1.0
  V  V5  1  0.500  0.244  0.334  1.0
  V  V6  1  0.745  0.000  0.833  1.0
  V  V7  1  0.745  0.000  0.167  1.0
  V  V8  1  0.742  0.000  0.500  1.0
  V  V9  1  0.000  0.500  0.750  1.0
  V  V10  1  0.000  0.500  0.082  1.0
  V  V11  1  0.000  0.500  0.415  1.0
  V  V12  1  0.500  0.756  0.666  1.0
  V  V13  1  0.500  0.758  0.000  1.0
  V  V14  1  0.500  0.756  0.334  1.0
  V  V15  1  0.255  0.000  0.833  1.0
  V  V16  1  0.255  0.000  0.167  1.0
  V  V17  1  0.258  0.000  0.500  1.0
  Ga  Ga18  1  0.500  0.500  0.833  1.0
  Ga  Ga19  1  0.500  0.500  0.167  1.0
  Ge  Ge20  1  0.500  0.500  0.500  1.0
  Ge  Ge21  1  0.000  0.000  0.666  1.0
  Ge  Ge22  1  0.000  0.000  0.000  1.0
  Ge  Ge23  1  0.000  0.000  0.334  1.0
[/CIF]
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The compound described by V9GaGe2 crystallizes in the orthorhombic Pmmm space group. There are seven inequivalent V sites. In the first V site, V(1) is bonded in a 6-coordinate geometry to one V(1), one V(2), two equivalent Ga(1), and two equivalent Ge(3) atoms. In the second V site, V(2) is bonded in a 6-coordinate geometry to one V(1), one V(3), two equivalent Ga(1), and two equivalent Ge(2) atoms. In the third V site, V(3) is bonded in a 6-coordinate geometry to one V(2), one V(3), two equivalent Ge(1), and two equivalent Ge(2) atoms. In the fourth V site, V(4) is bonded in a 6-coordinate geometry to two equivalent V(4), one Ga(1), one Ge(1), and two equivalent Ge(2) atoms. In the fifth V site, V(5) is bonded in a 6-coordinate geometry to two equivalent V(5), two equivalent Ga(1), and two equivalent Ge(3) atoms. In the sixth V site, V(6) is bonded in a 6-coordinate geometry to two equivalent V(6), two equivalent Ga(1), one Ge(2), and one Ge(3) atom. In the seventh V site, V(7) is bonded in a 6-coordinate geometry to two equivalent V(7), two equivalent Ge(1), and two equivalent Ge(2) atoms. Ga(1) is bonded to two equivalent V(1), two equivalent V(2), two equivalent V(4), two equivalent V(5), and four equivalent V(6) atoms to form GaV12 cuboctahedra that share  an edgeedge with one Ge(1)V12 cuboctahedra, edges with five equivalent Ga(1)V12 cuboctahedra, faces with four equivalent Ge(2)V12 cuboctahedra, and faces with four equivalent Ge(3)V12 cuboctahedra. There are three inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to four equivalent V(3), four equivalent V(4), and four equivalent V(7) atoms to form GeV12 cuboctahedra that share edges with two equivalent Ga(1)V12 cuboctahedra, edges with four equivalent Ge(1)V12 cuboctahedra, and faces with eight equivalent Ge(2)V12 cuboctahedra. In the second Ge site, Ge(2) is bonded to two equivalent V(2), two equivalent V(3), two equivalent V(6), two equivalent V(7), and four equivalent V(4) atoms to form GeV12 cuboctahedra that share  an edgeedge with one Ge(3)V12 cuboctahedra, edges with five equivalent Ge(2)V12 cuboctahedra, faces with four equivalent Ga(1)V12 cuboctahedra, and faces with four equivalent Ge(1)V12 cuboctahedra. In the third Ge site, Ge(3) is bonded to four equivalent V(1), four equivalent V(5), and four equivalent V(6) atoms to form GeV12 cuboctahedra that share edges with two equivalent Ge(2)V12 cuboctahedra, edges with four equivalent Ge(3)V12 cuboctahedra, and faces with eight equivalent Ga(1)V12 cuboctahedra. is represented by the CIF file [CIF]
data_V9GaGe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.785
_cell_length_b   4.804
_cell_length_c   14.121
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   324.591
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.000  0.500  0.918  1.0
  V  V1  1  0.000  0.500  0.250  1.0
  V  V2  1  0.000  0.500  0.585  1.0
  V  V3  1  0.500  0.244  0.666  1.0
  V  V4  1  0.500  0.242  0.000  1.0
  V  V5  1  0.500  0.244  0.334  1.0
  V  V6  1  0.745  0.000  0.833  1.0
  V  V7  1  0.745  0.000  0.167  1.0
  V  V8  1  0.742  0.000  0.500  1.0
  V  V9  1  0.000  0.500  0.750  1.0
  V  V10  1  0.000  0.500  0.082  1.0
  V  V11  1  0.000  0.500  0.415  1.0
  V  V12  1  0.500  0.756  0.666  1.0
  V  V13  1  0.500  0.758  0.000  1.0
  V  V14  1  0.500  0.756  0.334  1.0
  V  V15  1  0.255  0.000  0.833  1.0
  V  V16  1  0.255  0.000  0.167  1.0
  V  V17  1  0.258  0.000  0.500  1.0
  Ga  Ga18  1  0.500  0.500  0.833  1.0
  Ga  Ga19  1  0.500  0.500  0.167  1.0
  Ge  Ge20  1  0.500  0.500  0.500  1.0
  Ge  Ge21  1  0.000  0.000  0.666  1.0
  Ge  Ge22  1  0.000  0.000  0.000  1.0
  Ge  Ge23  1  0.000  0.000  0.334  1.0
[/CIF]
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