The structure described by CsGaS2 crystallizes in the monoclinic C2/c space group. Cs(1) is bonded in a 8-coordinate geometry to eight equivalent S(1) atoms. Ga(1) is bonded to four equivalent S(1) atoms to form edge-sharing GaS4 tetrahedra. S(1) is bonded in a 6-coordinate geometry to four equivalent Cs(1) and two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_CsGaS2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.934
_cell_length_b   7.210
_cell_length_c   7.210
_cell_angle_alpha   117.384
_cell_angle_beta   101.749
_cell_angle_gamma   101.749
_symmetry_Int_Tables_number   1
_cell_volume   251.946
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.250  0.356  0.644  1.0
  Cs  Cs1  1  0.750  0.644  0.356  1.0
  Ga  Ga2  1  0.750  0.003  0.997  1.0
  Ga  Ga3  1  0.250  0.997  0.003  1.0
  S  S4  1  0.406  0.921  0.721  1.0
  S  S5  1  0.094  0.279  0.079  1.0
  S  S6  1  0.906  0.721  0.921  1.0
  S  S7  1  0.594  0.079  0.279  1.0
[/CIF]
.
The structure described by CsGaS2 crystallizes in the monoclinic C2/c space group. Cs(1) is bonded in a 8-coordinate geometry to eight equivalent S(1) atoms. Ga(1) is bonded to four equivalent S(1) atoms to form edge-sharing GaS4 tetrahedra. S(1) is bonded in a 6-coordinate geometry to four equivalent Cs(1) and two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_CsGaS2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.934
_cell_length_b   7.210
_cell_length_c   7.210
_cell_angle_alpha   117.384
_cell_angle_beta   101.749
_cell_angle_gamma   101.749
_symmetry_Int_Tables_number   1
_cell_volume   251.946
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.250  0.356  0.644  1.0
  Cs  Cs1  1  0.750  0.644  0.356  1.0
  Ga  Ga2  1  0.750  0.003  0.997  1.0
  Ga  Ga3  1  0.250  0.997  0.003  1.0
  S  S4  1  0.406  0.921  0.721  1.0
  S  S5  1  0.094  0.279  0.079  1.0
  S  S6  1  0.906  0.721  0.921  1.0
  S  S7  1  0.594  0.079  0.279  1.0
[/CIF]
.