The material structure described by In5SnSb3Te is Stannite-like structured and crystallizes in the triclinic P1 space group. There are five inequivalent In sites. In the first In site, In(1) is bonded to one Sn(1), one Sb(1), one Sb(2), and one Sb(3) atom to form InSnSb3 tetrahedra that share corners with three equivalent In(2)Sb3Te tetrahedra, corners with three equivalent In(3)SnSb2Te tetrahedra, corners with three equivalent In(4)SnSb2Te tetrahedra, and corners with three equivalent In(5)SnSb2Te tetrahedra. In the second In site, In(2) is bonded to one Sb(1), one Sb(2), one Sb(3), and one Te(1) atom to form InSb3Te tetrahedra that share corners with three equivalent In(3)SnSb2Te tetrahedra, corners with three equivalent In(4)SnSb2Te tetrahedra, corners with three equivalent In(5)SnSb2Te tetrahedra, and corners with three equivalent In(1)SnSb3 tetrahedra. In the third In site, In(3) is bonded to one Sn(1), one Sb(2), one Sb(3), and one Te(1) atom to form InSnSb2Te tetrahedra that share corners with three equivalent In(2)Sb3Te tetrahedra, corners with three equivalent In(4)SnSb2Te tetrahedra, corners with three equivalent In(5)SnSb2Te tetrahedra, and corners with three equivalent In(1)SnSb3 tetrahedra. In the fourth In site, In(4) is bonded to one Sn(1), one Sb(1), one Sb(3), and one Te(1) atom to form InSnSb2Te tetrahedra that share corners with three equivalent In(2)Sb3Te tetrahedra, corners with three equivalent In(3)SnSb2Te tetrahedra, corners with three equivalent In(5)SnSb2Te tetrahedra, and corners with three equivalent In(1)SnSb3 tetrahedra. In the fifth In site, In(5) is bonded to one Sn(1), one Sb(1), one Sb(2), and one Te(1) atom to form InSnSb2Te tetrahedra that share corners with three equivalent In(2)Sb3Te tetrahedra, corners with three equivalent In(3)SnSb2Te tetrahedra, corners with three equivalent In(4)SnSb2Te tetrahedra, and corners with three equivalent In(1)SnSb3 tetrahedra. Sn(1) is bonded to one In(1), one In(3), one In(4), and one In(5) atom to form SnIn4 tetrahedra that share corners with three equivalent Sb(1)In4 tetrahedra, corners with three equivalent Sb(2)In4 tetrahedra, corners with three equivalent Sb(3)In4 tetrahedra, and corners with three equivalent Te(1)In4 tetrahedra. There are three inequivalent Sb sites. In the first Sb site, Sb(1) is bonded to one In(1), one In(2), one In(4), and one In(5) atom to form SbIn4 tetrahedra that share corners with three equivalent Sn(1)In4 tetrahedra, corners with three equivalent Sb(2)In4 tetrahedra, corners with three equivalent Sb(3)In4 tetrahedra, and corners with three equivalent Te(1)In4 tetrahedra. In the second Sb site, Sb(2) is bonded to one In(1), one In(2), one In(3), and one In(5) atom to form SbIn4 tetrahedra that share corners with three equivalent Sn(1)In4 tetrahedra, corners with three equivalent Sb(1)In4 tetrahedra, corners with three equivalent Sb(3)In4 tetrahedra, and corners with three equivalent Te(1)In4 tetrahedra. In the third Sb site, Sb(3) is bonded to one In(1), one In(2), one In(3), and one In(4) atom to form SbIn4 tetrahedra that share corners with three equivalent Sn(1)In4 tetrahedra, corners with three equivalent Sb(1)In4 tetrahedra, corners with three equivalent Sb(2)In4 tetrahedra, and corners with three equivalent Te(1)In4 tetrahedra. Te(1) is bonded to one In(2), one In(3), one In(4), and one In(5) atom to form TeIn4 tetrahedra that share corners with three equivalent Sn(1)In4 tetrahedra, corners with three equivalent Sb(1)In4 tetrahedra, corners with three equivalent Sb(2)In4 tetrahedra, and corners with three equivalent Sb(3)In4 tetrahedra. is represented by the CIF file [CIF]
data_In5SnSb3Te
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.681
_cell_length_b   8.162
_cell_length_c   8.175
_cell_angle_alpha   80.244
_cell_angle_beta   65.915
_cell_angle_gamma   65.851
_symmetry_Int_Tables_number   1
_cell_volume   371.376
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.997  0.004  0.998  1.0
  In  In1  1  0.404  0.809  0.396  1.0
  In  In2  1  0.787  0.599  0.810  1.0
  In  In3  1  0.206  0.394  0.187  1.0
  In  In4  1  0.609  0.193  0.608  1.0
  Sn  Sn5  1  0.653  0.298  0.901  1.0
  Sb  Sb6  1  0.045  0.100  0.300  1.0
  Sb  Sb7  1  0.448  0.899  0.701  1.0
  Sb  Sb8  1  0.852  0.701  0.100  1.0
  Te  Te9  1  0.248  0.502  0.499  1.0
[/CIF]
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The material structure described by In5SnSb3Te is Stannite-like structured and crystallizes in the triclinic P1 space group. There are five inequivalent In sites. In the first In site, In(1) is bonded to one Sn(1), one Sb(1), one Sb(2), and one Sb(3) atom to form InSnSb3 tetrahedra that share corners with three equivalent In(2)Sb3Te tetrahedra, corners with three equivalent In(3)SnSb2Te tetrahedra, corners with three equivalent In(4)SnSb2Te tetrahedra, and corners with three equivalent In(5)SnSb2Te tetrahedra. In the second In site, In(2) is bonded to one Sb(1), one Sb(2), one Sb(3), and one Te(1) atom to form InSb3Te tetrahedra that share corners with three equivalent In(3)SnSb2Te tetrahedra, corners with three equivalent In(4)SnSb2Te tetrahedra, corners with three equivalent In(5)SnSb2Te tetrahedra, and corners with three equivalent In(1)SnSb3 tetrahedra. In the third In site, In(3) is bonded to one Sn(1), one Sb(2), one Sb(3), and one Te(1) atom to form InSnSb2Te tetrahedra that share corners with three equivalent In(2)Sb3Te tetrahedra, corners with three equivalent In(4)SnSb2Te tetrahedra, corners with three equivalent In(5)SnSb2Te tetrahedra, and corners with three equivalent In(1)SnSb3 tetrahedra. In the fourth In site, In(4) is bonded to one Sn(1), one Sb(1), one Sb(3), and one Te(1) atom to form InSnSb2Te tetrahedra that share corners with three equivalent In(2)Sb3Te tetrahedra, corners with three equivalent In(3)SnSb2Te tetrahedra, corners with three equivalent In(5)SnSb2Te tetrahedra, and corners with three equivalent In(1)SnSb3 tetrahedra. In the fifth In site, In(5) is bonded to one Sn(1), one Sb(1), one Sb(2), and one Te(1) atom to form InSnSb2Te tetrahedra that share corners with three equivalent In(2)Sb3Te tetrahedra, corners with three equivalent In(3)SnSb2Te tetrahedra, corners with three equivalent In(4)SnSb2Te tetrahedra, and corners with three equivalent In(1)SnSb3 tetrahedra. Sn(1) is bonded to one In(1), one In(3), one In(4), and one In(5) atom to form SnIn4 tetrahedra that share corners with three equivalent Sb(1)In4 tetrahedra, corners with three equivalent Sb(2)In4 tetrahedra, corners with three equivalent Sb(3)In4 tetrahedra, and corners with three equivalent Te(1)In4 tetrahedra. There are three inequivalent Sb sites. In the first Sb site, Sb(1) is bonded to one In(1), one In(2), one In(4), and one In(5) atom to form SbIn4 tetrahedra that share corners with three equivalent Sn(1)In4 tetrahedra, corners with three equivalent Sb(2)In4 tetrahedra, corners with three equivalent Sb(3)In4 tetrahedra, and corners with three equivalent Te(1)In4 tetrahedra. In the second Sb site, Sb(2) is bonded to one In(1), one In(2), one In(3), and one In(5) atom to form SbIn4 tetrahedra that share corners with three equivalent Sn(1)In4 tetrahedra, corners with three equivalent Sb(1)In4 tetrahedra, corners with three equivalent Sb(3)In4 tetrahedra, and corners with three equivalent Te(1)In4 tetrahedra. In the third Sb site, Sb(3) is bonded to one In(1), one In(2), one In(3), and one In(4) atom to form SbIn4 tetrahedra that share corners with three equivalent Sn(1)In4 tetrahedra, corners with three equivalent Sb(1)In4 tetrahedra, corners with three equivalent Sb(2)In4 tetrahedra, and corners with three equivalent Te(1)In4 tetrahedra. Te(1) is bonded to one In(2), one In(3), one In(4), and one In(5) atom to form TeIn4 tetrahedra that share corners with three equivalent Sn(1)In4 tetrahedra, corners with three equivalent Sb(1)In4 tetrahedra, corners with three equivalent Sb(2)In4 tetrahedra, and corners with three equivalent Sb(3)In4 tetrahedra. is represented by the CIF file [CIF]
data_In5SnSb3Te
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.681
_cell_length_b   8.162
_cell_length_c   8.175
_cell_angle_alpha   80.244
_cell_angle_beta   65.915
_cell_angle_gamma   65.851
_symmetry_Int_Tables_number   1
_cell_volume   371.376
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.997  0.004  0.998  1.0
  In  In1  1  0.404  0.809  0.396  1.0
  In  In2  1  0.787  0.599  0.810  1.0
  In  In3  1  0.206  0.394  0.187  1.0
  In  In4  1  0.609  0.193  0.608  1.0
  Sn  Sn5  1  0.653  0.298  0.901  1.0
  Sb  Sb6  1  0.045  0.100  0.300  1.0
  Sb  Sb7  1  0.448  0.899  0.701  1.0
  Sb  Sb8  1  0.852  0.701  0.100  1.0
  Te  Te9  1  0.248  0.502  0.499  1.0
[/CIF]
.