The material structure described by SiC is Moissanite-6H structured and crystallizes in the hexagonal P6_3mc space group. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(2) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2) is bonded to one C(3) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(3) is bonded to one C(1) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. There are three inequivalent C sites. In the first C site, C(1) is bonded to one Si(3) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(1) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(2) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra. is represented by the CIF file [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.077
_cell_length_b   3.077
_cell_length_c   15.098
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   123.766
_cell_formula_units_Z   6
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.333  0.667  0.833  1.0
  Si  Si1  1  0.667  0.333  0.333  1.0
  Si  Si2  1  0.667  0.333  0.667  1.0
  Si  Si3  1  0.333  0.667  0.167  1.0
  Si  Si4  1  0.000  0.000  0.500  1.0
  Si  Si5  1  0.000  0.000  1.000  1.0
  C  C6  1  0.000  0.000  0.874  1.0
  C  C7  1  0.000  0.000  0.374  1.0
  C  C8  1  0.333  0.667  0.708  1.0
  C  C9  1  0.667  0.333  0.208  1.0
  C  C10  1  0.667  0.333  0.542  1.0
  C  C11  1  0.333  0.667  0.042  1.0
[/CIF]
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The material structure described by SiC is Moissanite-6H structured and crystallizes in the hexagonal P6_3mc space group. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(2) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2) is bonded to one C(3) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(3) is bonded to one C(1) and three equivalent C(3) atoms to form corner-sharing SiC4 tetrahedra. There are three inequivalent C sites. In the first C site, C(1) is bonded to one Si(3) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(1) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(3) is bonded to one Si(2) and three equivalent Si(3) atoms to form corner-sharing CSi4 tetrahedra. is represented by the CIF file [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.077
_cell_length_b   3.077
_cell_length_c   15.098
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   123.766
_cell_formula_units_Z   6
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.333  0.667  0.833  1.0
  Si  Si1  1  0.667  0.333  0.333  1.0
  Si  Si2  1  0.667  0.333  0.667  1.0
  Si  Si3  1  0.333  0.667  0.167  1.0
  Si  Si4  1  0.000  0.000  0.500  1.0
  Si  Si5  1  0.000  0.000  1.000  1.0
  C  C6  1  0.000  0.000  0.874  1.0
  C  C7  1  0.000  0.000  0.374  1.0
  C  C8  1  0.333  0.667  0.708  1.0
  C  C9  1  0.667  0.333  0.208  1.0
  C  C10  1  0.667  0.333  0.542  1.0
  C  C11  1  0.333  0.667  0.042  1.0
[/CIF]
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