The crystal structure described by GaBi2N3 crystallizes in the monoclinic C2/c space group. Ga(1) is bonded to one N(1), one N(2), one N(3), and one N(4) atom to form corner-sharing GaN4 tetrahedra. There are two inequivalent Bi sites. In the first Bi site, Bi(1) is bonded in a distorted T-shaped geometry to one N(2) and two equivalent N(3) atoms. In the second Bi site, Bi(2) is bonded in a 4-coordinate geometry to one N(1), one N(2), one N(3), and one N(4) atom. There are four inequivalent N sites. In the first N site, N(4) is bonded in a distorted see-saw-like geometry to two equivalent Ga(1) and two equivalent Bi(2) atoms. In the second N site, N(1) is bonded in a distorted see-saw-like geometry to two equivalent Ga(1) and two equivalent Bi(2) atoms. In the third N site, N(2) is bonded in a distorted trigonal planar geometry to one Ga(1), one Bi(1), and one Bi(2) atom. In the fourth N site, N(3) is bonded to one Ga(1), one Bi(2), and two equivalent Bi(1) atoms to form distorted edge-sharing NGaBi3 trigonal pyramids. is represented by the CIF file [CIF]
data_GaBi2N3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.055
_cell_length_b   10.607
_cell_length_c   14.523
_cell_angle_alpha   90.000
_cell_angle_beta   88.141
_cell_angle_gamma   151.144
_symmetry_Int_Tables_number   1
_cell_volume   449.193
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.573  0.329  0.673  1.0
  Ga  Ga1  1  0.427  0.756  0.827  1.0
  Ga  Ga2  1  0.427  0.671  0.327  1.0
  Ga  Ga3  1  0.573  0.244  0.173  1.0
  Bi  Bi4  1  0.481  0.107  0.920  1.0
  Bi  Bi5  1  0.519  0.626  0.580  1.0
  Bi  Bi6  1  0.519  0.893  0.080  1.0
  Bi  Bi7  1  0.481  0.374  0.420  1.0
  Bi  Bi8  1  0.593  0.978  0.637  1.0
  Bi  Bi9  1  0.407  0.385  0.863  1.0
  Bi  Bi10  1  0.407  0.022  0.363  1.0
  Bi  Bi11  1  0.593  0.615  0.137  1.0
  N  N12  1  0.000  0.635  0.750  1.0
  N  N13  1  0.000  0.365  0.250  1.0
  N  N14  1  0.783  0.273  0.627  1.0
  N  N15  1  0.217  0.490  0.873  1.0
  N  N16  1  0.217  0.727  0.373  1.0
  N  N17  1  0.783  0.510  0.127  1.0
  N  N18  1  0.457  0.071  0.072  1.0
  N  N19  1  0.543  0.614  0.428  1.0
  N  N20  1  0.543  0.929  0.928  1.0
  N  N21  1  0.457  0.386  0.572  1.0
  N  N22  1  0.000  0.085  0.750  1.0
  N  N23  1  0.000  0.915  0.250  1.0
[/CIF]
.
The crystal structure described by GaBi2N3 crystallizes in the monoclinic C2/c space group. Ga(1) is bonded to one N(1), one N(2), one N(3), and one N(4) atom to form corner-sharing GaN4 tetrahedra. There are two inequivalent Bi sites. In the first Bi site, Bi(1) is bonded in a distorted T-shaped geometry to one N(2) and two equivalent N(3) atoms. In the second Bi site, Bi(2) is bonded in a 4-coordinate geometry to one N(1), one N(2), one N(3), and one N(4) atom. There are four inequivalent N sites. In the first N site, N(4) is bonded in a distorted see-saw-like geometry to two equivalent Ga(1) and two equivalent Bi(2) atoms. In the second N site, N(1) is bonded in a distorted see-saw-like geometry to two equivalent Ga(1) and two equivalent Bi(2) atoms. In the third N site, N(2) is bonded in a distorted trigonal planar geometry to one Ga(1), one Bi(1), and one Bi(2) atom. In the fourth N site, N(3) is bonded to one Ga(1), one Bi(2), and two equivalent Bi(1) atoms to form distorted edge-sharing NGaBi3 trigonal pyramids. is represented by the CIF file [CIF]
data_GaBi2N3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.055
_cell_length_b   10.607
_cell_length_c   14.523
_cell_angle_alpha   90.000
_cell_angle_beta   88.141
_cell_angle_gamma   151.144
_symmetry_Int_Tables_number   1
_cell_volume   449.193
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.573  0.329  0.673  1.0
  Ga  Ga1  1  0.427  0.756  0.827  1.0
  Ga  Ga2  1  0.427  0.671  0.327  1.0
  Ga  Ga3  1  0.573  0.244  0.173  1.0
  Bi  Bi4  1  0.481  0.107  0.920  1.0
  Bi  Bi5  1  0.519  0.626  0.580  1.0
  Bi  Bi6  1  0.519  0.893  0.080  1.0
  Bi  Bi7  1  0.481  0.374  0.420  1.0
  Bi  Bi8  1  0.593  0.978  0.637  1.0
  Bi  Bi9  1  0.407  0.385  0.863  1.0
  Bi  Bi10  1  0.407  0.022  0.363  1.0
  Bi  Bi11  1  0.593  0.615  0.137  1.0
  N  N12  1  0.000  0.635  0.750  1.0
  N  N13  1  0.000  0.365  0.250  1.0
  N  N14  1  0.783  0.273  0.627  1.0
  N  N15  1  0.217  0.490  0.873  1.0
  N  N16  1  0.217  0.727  0.373  1.0
  N  N17  1  0.783  0.510  0.127  1.0
  N  N18  1  0.457  0.071  0.072  1.0
  N  N19  1  0.543  0.614  0.428  1.0
  N  N20  1  0.543  0.929  0.928  1.0
  N  N21  1  0.457  0.386  0.572  1.0
  N  N22  1  0.000  0.085  0.750  1.0
  N  N23  1  0.000  0.915  0.250  1.0
[/CIF]
.