The crystal structure described by BaSi7N10 crystallizes in the monoclinic Pc space group. Ba(1) is bonded in a 13-coordinate geometry to one N(1), one N(10), one N(3), one N(4), one N(9), two equivalent N(2), two equivalent N(6), two equivalent N(7), and two equivalent N(8) atoms. There are seven inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(2), one N(5), and one N(9) atom to form corner-sharing SiN4 tetrahedra. In the second Si site, Si(2) is bonded to one N(1), one N(4), one N(5), and one N(6) atom to form corner-sharing SiN4 tetrahedra. In the third Si site, Si(3) is bonded to one N(10), one N(3), one N(4), and one N(5) atom to form corner-sharing SiN4 tetrahedra. In the fourth Si site, Si(4) is bonded to one N(2), one N(3), one N(4), and one N(8) atom to form corner-sharing SiN4 tetrahedra. In the fifth Si site, Si(5) is bonded to one N(1), one N(2), one N(3), and one N(7) atom to form corner-sharing SiN4 tetrahedra. In the sixth Si site, Si(6) is bonded to one N(10), one N(6), one N(7), and one N(9) atom to form a mixture of corner and edge-sharing SiN4 tetrahedra. In the seventh Si site, Si(7) is bonded to one N(10), one N(6), one N(8), and one N(9) atom to form a mixture of corner and edge-sharing SiN4 tetrahedra. There are ten inequivalent N sites. In the first N site, N(9) is bonded in a 3-coordinate geometry to one Ba(1), one Si(1), one Si(6), and one Si(7) atom. In the second N site, N(10) is bonded in a 3-coordinate geometry to one Ba(1), one Si(3), one Si(6), and one Si(7) atom. In the third N site, N(1) is bonded in a distorted trigonal planar geometry to one Ba(1), one Si(1), one Si(2), and one Si(5) atom. In the fourth N site, N(2) is bonded in a trigonal planar geometry to two equivalent Ba(1), one Si(1), one Si(4), and one Si(5) atom. In the fifth N site, N(3) is bonded in a trigonal planar geometry to one Ba(1), one Si(3), one Si(4), and one Si(5) atom. In the sixth N site, N(4) is bonded in a trigonal planar geometry to one Ba(1), one Si(2), one Si(3), and one Si(4) atom. In the seventh N site, N(5) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(3) atom. In the eighth N site, N(6) is bonded in a trigonal planar geometry to two equivalent Ba(1), one Si(2), one Si(6), and one Si(7) atom. In the ninth N site, N(7) is bonded in a distorted bent 150 degrees geometry to two equivalent Ba(1), one Si(5), and one Si(6) atom. In the tenth N site, N(8) is bonded in a distorted bent 150 degrees geometry to two equivalent Ba(1), one Si(4), and one Si(7) atom. is represented by the CIF card [CIF]
data_BaSi7N10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.722
_cell_length_b   6.876
_cell_length_c   9.627
_cell_angle_alpha   73.759
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   427.192
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.597  0.289  0.788  1.0
  Ba  Ba1  1  0.403  0.289  0.288  1.0
  Si  Si2  1  0.865  0.995  0.468  1.0
  Si  Si3  1  0.135  0.995  0.968  1.0
  Si  Si4  1  0.871  0.813  0.773  1.0
  Si  Si5  1  0.129  0.813  0.273  1.0
  Si  Si6  1  0.119  0.625  0.577  1.0
  Si  Si7  1  0.881  0.625  0.077  1.0
  Si  Si8  1  0.106  0.438  0.888  1.0
  Si  Si9  1  0.894  0.438  0.388  1.0
  Si  Si10  1  0.124  0.178  0.653  1.0
  Si  Si11  1  0.876  0.178  0.153  1.0
  Si  Si12  1  0.473  0.868  0.633  1.0
  Si  Si13  1  0.527  0.868  0.133  1.0
  Si  Si14  1  0.472  0.686  0.945  1.0
  Si  Si15  1  0.528  0.686  0.445  1.0
  N  N16  1  0.916  0.033  0.637  1.0
  N  N17  1  0.084  0.033  0.137  1.0
  N  N18  1  0.889  0.217  0.329  1.0
  N  N19  1  0.111  0.217  0.829  1.0
  N  N20  1  0.922  0.408  0.024  1.0
  N  N21  1  0.078  0.408  0.524  1.0
  N  N22  1  1.000  0.614  0.737  1.0
  N  N23  1  0.000  0.614  0.237  1.0
  N  N24  1  0.037  0.827  0.437  1.0
  N  N25  1  0.963  0.827  0.937  1.0
  N  N26  1  0.617  0.775  0.789  1.0
  N  N27  1  0.383  0.775  0.289  1.0
  N  N28  1  0.340  0.073  0.630  1.0
  N  N29  1  0.660  0.073  0.130  1.0
  N  N30  1  0.332  0.488  0.943  1.0
  N  N31  1  0.668  0.488  0.443  1.0
  N  N32  1  0.367  0.897  0.985  1.0
  N  N33  1  0.633  0.897  0.485  1.0
  N  N34  1  0.631  0.651  0.095  1.0
  N  N35  1  0.369  0.651  0.595  1.0
[/CIF]
.
The crystal structure described by BaSi7N10 crystallizes in the monoclinic Pc space group. Ba(1) is bonded in a 13-coordinate geometry to one N(1), one N(10), one N(3), one N(4), one N(9), two equivalent N(2), two equivalent N(6), two equivalent N(7), and two equivalent N(8) atoms. There are seven inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(2), one N(5), and one N(9) atom to form corner-sharing SiN4 tetrahedra. In the second Si site, Si(2) is bonded to one N(1), one N(4), one N(5), and one N(6) atom to form corner-sharing SiN4 tetrahedra. In the third Si site, Si(3) is bonded to one N(10), one N(3), one N(4), and one N(5) atom to form corner-sharing SiN4 tetrahedra. In the fourth Si site, Si(4) is bonded to one N(2), one N(3), one N(4), and one N(8) atom to form corner-sharing SiN4 tetrahedra. In the fifth Si site, Si(5) is bonded to one N(1), one N(2), one N(3), and one N(7) atom to form corner-sharing SiN4 tetrahedra. In the sixth Si site, Si(6) is bonded to one N(10), one N(6), one N(7), and one N(9) atom to form a mixture of corner and edge-sharing SiN4 tetrahedra. In the seventh Si site, Si(7) is bonded to one N(10), one N(6), one N(8), and one N(9) atom to form a mixture of corner and edge-sharing SiN4 tetrahedra. There are ten inequivalent N sites. In the first N site, N(9) is bonded in a 3-coordinate geometry to one Ba(1), one Si(1), one Si(6), and one Si(7) atom. In the second N site, N(10) is bonded in a 3-coordinate geometry to one Ba(1), one Si(3), one Si(6), and one Si(7) atom. In the third N site, N(1) is bonded in a distorted trigonal planar geometry to one Ba(1), one Si(1), one Si(2), and one Si(5) atom. In the fourth N site, N(2) is bonded in a trigonal planar geometry to two equivalent Ba(1), one Si(1), one Si(4), and one Si(5) atom. In the fifth N site, N(3) is bonded in a trigonal planar geometry to one Ba(1), one Si(3), one Si(4), and one Si(5) atom. In the sixth N site, N(4) is bonded in a trigonal planar geometry to one Ba(1), one Si(2), one Si(3), and one Si(4) atom. In the seventh N site, N(5) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(3) atom. In the eighth N site, N(6) is bonded in a trigonal planar geometry to two equivalent Ba(1), one Si(2), one Si(6), and one Si(7) atom. In the ninth N site, N(7) is bonded in a distorted bent 150 degrees geometry to two equivalent Ba(1), one Si(5), and one Si(6) atom. In the tenth N site, N(8) is bonded in a distorted bent 150 degrees geometry to two equivalent Ba(1), one Si(4), and one Si(7) atom. is represented by the CIF card [CIF]
data_BaSi7N10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.722
_cell_length_b   6.876
_cell_length_c   9.627
_cell_angle_alpha   73.759
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   427.192
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.597  0.289  0.788  1.0
  Ba  Ba1  1  0.403  0.289  0.288  1.0
  Si  Si2  1  0.865  0.995  0.468  1.0
  Si  Si3  1  0.135  0.995  0.968  1.0
  Si  Si4  1  0.871  0.813  0.773  1.0
  Si  Si5  1  0.129  0.813  0.273  1.0
  Si  Si6  1  0.119  0.625  0.577  1.0
  Si  Si7  1  0.881  0.625  0.077  1.0
  Si  Si8  1  0.106  0.438  0.888  1.0
  Si  Si9  1  0.894  0.438  0.388  1.0
  Si  Si10  1  0.124  0.178  0.653  1.0
  Si  Si11  1  0.876  0.178  0.153  1.0
  Si  Si12  1  0.473  0.868  0.633  1.0
  Si  Si13  1  0.527  0.868  0.133  1.0
  Si  Si14  1  0.472  0.686  0.945  1.0
  Si  Si15  1  0.528  0.686  0.445  1.0
  N  N16  1  0.916  0.033  0.637  1.0
  N  N17  1  0.084  0.033  0.137  1.0
  N  N18  1  0.889  0.217  0.329  1.0
  N  N19  1  0.111  0.217  0.829  1.0
  N  N20  1  0.922  0.408  0.024  1.0
  N  N21  1  0.078  0.408  0.524  1.0
  N  N22  1  1.000  0.614  0.737  1.0
  N  N23  1  0.000  0.614  0.237  1.0
  N  N24  1  0.037  0.827  0.437  1.0
  N  N25  1  0.963  0.827  0.937  1.0
  N  N26  1  0.617  0.775  0.789  1.0
  N  N27  1  0.383  0.775  0.289  1.0
  N  N28  1  0.340  0.073  0.630  1.0
  N  N29  1  0.660  0.073  0.130  1.0
  N  N30  1  0.332  0.488  0.943  1.0
  N  N31  1  0.668  0.488  0.443  1.0
  N  N32  1  0.367  0.897  0.985  1.0
  N  N33  1  0.633  0.897  0.485  1.0
  N  N34  1  0.631  0.651  0.095  1.0
  N  N35  1  0.369  0.651  0.595  1.0
[/CIF]
.