The structure described by Ga2TiO5 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Ti sites. In the first Ti site, Ti(1) is bonded in a 6-coordinate geometry to one O(1), one O(2), one O(3), one O(4), one O(5), and one O(8) atom. In the second Ti site, Ti(2) is bonded to one O(10), one O(4), one O(6), one O(7), one O(8), and one O(9) atom to form distorted TiO6 octahedra that share  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra, corners with two equivalent Ga(1)O6 octahedra,  an edgeedge with one Ga(2)O6 octahedra, edges with two equivalent Ga(3)O6 octahedra, and edges with two equivalent Ga(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 25-60°. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), one O(2), one O(3), one O(4), one O(5), and one O(6) atom to form distorted GaO6 octahedra that share  a cornercorner with one Ga(2)O6 octahedra, corners with two equivalent Ti(2)O6 octahedra,  an edgeedge with one Ga(3)O6 octahedra,  an edgeedge with one Ga(4)O6 octahedra, and edges with two equivalent Ga(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 33-57°. In the second Ga site, Ga(2) is bonded to one O(1), one O(2), one O(3), one O(4), one O(5), and one O(7) atom to form distorted GaO6 octahedra that share  a cornercorner with one Ga(1)O6 octahedra, corners with two equivalent Ga(4)O6 octahedra,  an edgeedge with one Ti(2)O6 octahedra,  an edgeedge with one Ga(3)O6 octahedra, and edges with two equivalent Ga(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 33-57°. In the third Ga site, Ga(3) is bonded to one O(10), one O(3), one O(6), one O(7), one O(8), and one O(9) atom to form distorted GaO6 octahedra that share  a cornercorner with one Ti(2)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra,  an edgeedge with one Ga(1)O6 octahedra,  an edgeedge with one Ga(2)O6 octahedra, edges with two equivalent Ti(2)O6 octahedra, and edges with two equivalent Ga(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 25-31°. In the fourth Ga site, Ga(4) is bonded to one O(10), one O(5), one O(6), one O(7), one O(8), and one O(9) atom to form distorted GaO6 octahedra that share  a cornercorner with one Ti(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra,  an edgeedge with one Ga(1)O6 octahedra, edges with two equivalent Ti(2)O6 octahedra, and edges with two equivalent Ga(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 31-60°. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal non-coplanar geometry to one Ti(1), one Ga(1), and one Ga(2) atom. In the second O site, O(2) is bonded in a distorted trigonal non-coplanar geometry to one Ti(1), one Ga(1), and one Ga(2) atom. In the third O site, O(3) is bonded to one Ti(1), one Ga(1), one Ga(2), and one Ga(3) atom to form distorted OTiGa3 trigonal pyramids that share corners with two equivalent O(8)Ti2Ga2 tetrahedra,  a cornercorner with one O(4)Ti2Ga2 trigonal pyramid,  a cornercorner with one O(5)TiGa3 trigonal pyramid,  an edgeedge with one O(4)Ti2Ga2 trigonal pyramid,  an edgeedge with one O(5)TiGa3 trigonal pyramid,  an edgeedge with one O(6)TiGa3 trigonal pyramid, and  an edgeedge with one O(7)TiGa3 trigonal pyramid. In the fourth O site, O(4) is bonded to one Ti(1), one Ti(2), one Ga(1), and one Ga(2) atom to form distorted OTi2Ga2 trigonal pyramids that share  a cornercorner with one O(3)TiGa3 trigonal pyramid,  a cornercorner with one O(5)TiGa3 trigonal pyramid, corners with two equivalent O(6)TiGa3 trigonal pyramids,  an edgeedge with one O(8)Ti2Ga2 tetrahedra,  an edgeedge with one O(3)TiGa3 trigonal pyramid,  an edgeedge with one O(5)TiGa3 trigonal pyramid, and  an edgeedge with one O(7)TiGa3 trigonal pyramid. In the fifth O site, O(5) is bonded to one Ti(1), one Ga(1), one Ga(2), and one Ga(4) atom to form distorted OTiGa3 trigonal pyramids that share  a cornercorner with one O(4)Ti2Ga2 trigonal pyramid,  a cornercorner with one O(3)TiGa3 trigonal pyramid, corners with two equivalent O(7)TiGa3 trigonal pyramids,  an edgeedge with one O(8)Ti2Ga2 tetrahedra,  an edgeedge with one O(4)Ti2Ga2 trigonal pyramid,  an edgeedge with one O(3)TiGa3 trigonal pyramid, and  an edgeedge with one O(6)TiGa3 trigonal pyramid. In the sixth O site, O(6) is bonded to one Ti(2), one Ga(1), one Ga(3), and one Ga(4) atom to form distorted OTiGa3 trigonal pyramids that share  a cornercorner with one O(8)Ti2Ga2 tetrahedra,  a cornercorner with one O(7)TiGa3 trigonal pyramid, corners with two equivalent O(4)Ti2Ga2 trigonal pyramids,  an edgeedge with one O(8)Ti2Ga2 tetrahedra,  an edgeedge with one O(3)TiGa3 trigonal pyramid,  an edgeedge with one O(5)TiGa3 trigonal pyramid, and  an edgeedge with one O(7)TiGa3 trigonal pyramid. In the seventh O site, O(7) is bonded to one Ti(2), one Ga(2), one Ga(3), and one Ga(4) atom to form distorted OTiGa3 trigonal pyramids that share  a cornercorner with one O(8)Ti2Ga2 tetrahedra,  a cornercorner with one O(6)TiGa3 trigonal pyramid, corners with two equivalent O(5)TiGa3 trigonal pyramids,  an edgeedge with one O(8)Ti2Ga2 tetrahedra,  an edgeedge with one O(4)Ti2Ga2 trigonal pyramid,  an edgeedge with one O(3)TiGa3 trigonal pyramid, and  an edgeedge with one O(6)TiGa3 trigonal pyramid. In the eighth O site, O(8) is bonded to one Ti(1), one Ti(2), one Ga(3), and one Ga(4) atom to form distorted OTi2Ga2 tetrahedra that share  a cornercorner with one O(6)TiGa3 trigonal pyramid,  a cornercorner with one O(7)TiGa3 trigonal pyramid, corners with two equivalent O(3)TiGa3 trigonal pyramids,  an edgeedge with one O(4)Ti2Ga2 trigonal pyramid,  an edgeedge with one O(5)TiGa3 trigonal pyramid,  an edgeedge with one O(6)TiGa3 trigonal pyramid, and  an edgeedge with one O(7)TiGa3 trigonal pyramid. In the ninth O site, O(9) is bonded in a distorted T-shaped geometry to one Ti(2), one Ga(3), and one Ga(4) atom. In the tenth O site, O(10) is bonded in a distorted trigonal non-coplanar geometry to one Ti(2), one Ga(3), and one Ga(4) atom. is represented by the CIF card [CIF]
data_TiGa2O5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.416
_cell_length_b   5.280
_cell_length_c   10.036
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   110.484
_symmetry_Int_Tables_number   1
_cell_volume   368.109
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ti  Ti0  1  0.092  0.356  0.249  1.0
  Ti  Ti1  1  0.433  0.735  0.060  1.0
  Ti  Ti2  1  0.567  0.265  0.560  1.0
  Ti  Ti3  1  0.908  0.644  0.749  1.0
  Ga  Ga4  1  0.071  0.283  0.563  1.0
  Ga  Ga5  1  0.068  0.274  0.936  1.0
  Ga  Ga6  1  0.403  0.625  0.750  1.0
  Ga  Ga7  1  0.432  0.729  0.434  1.0
  Ga  Ga8  1  0.568  0.271  0.934  1.0
  Ga  Ga9  1  0.597  0.375  0.250  1.0
  Ga  Ga10  1  0.929  0.717  0.063  1.0
  Ga  Ga11  1  0.932  0.726  0.436  1.0
  O  O12  1  0.028  0.093  0.118  1.0
  O  O13  1  0.029  0.097  0.383  1.0
  O  O14  1  0.112  0.484  0.749  1.0
  O  O15  1  0.158  0.617  0.070  1.0
  O  O16  1  0.156  0.615  0.433  1.0
  O  O17  1  0.349  0.384  0.582  1.0
  O  O18  1  0.347  0.381  0.921  1.0
  O  O19  1  0.372  0.514  0.249  1.0
  O  O20  1  0.477  0.913  0.617  1.0
  O  O21  1  0.477  0.896  0.887  1.0
  O  O22  1  0.523  0.104  0.387  1.0
  O  O23  1  0.523  0.087  0.117  1.0
  O  O24  1  0.628  0.486  0.749  1.0
  O  O25  1  0.651  0.616  0.082  1.0
  O  O26  1  0.653  0.619  0.421  1.0
  O  O27  1  0.842  0.383  0.570  1.0
  O  O28  1  0.844  0.385  0.933  1.0
  O  O29  1  0.888  0.516  0.249  1.0
  O  O30  1  0.972  0.907  0.618  1.0
  O  O31  1  0.971  0.903  0.883  1.0
[/CIF]
.
The structure described by Ga2TiO5 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Ti sites. In the first Ti site, Ti(1) is bonded in a 6-coordinate geometry to one O(1), one O(2), one O(3), one O(4), one O(5), and one O(8) atom. In the second Ti site, Ti(2) is bonded to one O(10), one O(4), one O(6), one O(7), one O(8), and one O(9) atom to form distorted TiO6 octahedra that share  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra, corners with two equivalent Ga(1)O6 octahedra,  an edgeedge with one Ga(2)O6 octahedra, edges with two equivalent Ga(3)O6 octahedra, and edges with two equivalent Ga(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 25-60°. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), one O(2), one O(3), one O(4), one O(5), and one O(6) atom to form distorted GaO6 octahedra that share  a cornercorner with one Ga(2)O6 octahedra, corners with two equivalent Ti(2)O6 octahedra,  an edgeedge with one Ga(3)O6 octahedra,  an edgeedge with one Ga(4)O6 octahedra, and edges with two equivalent Ga(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 33-57°. In the second Ga site, Ga(2) is bonded to one O(1), one O(2), one O(3), one O(4), one O(5), and one O(7) atom to form distorted GaO6 octahedra that share  a cornercorner with one Ga(1)O6 octahedra, corners with two equivalent Ga(4)O6 octahedra,  an edgeedge with one Ti(2)O6 octahedra,  an edgeedge with one Ga(3)O6 octahedra, and edges with two equivalent Ga(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 33-57°. In the third Ga site, Ga(3) is bonded to one O(10), one O(3), one O(6), one O(7), one O(8), and one O(9) atom to form distorted GaO6 octahedra that share  a cornercorner with one Ti(2)O6 octahedra,  a cornercorner with one Ga(4)O6 octahedra,  an edgeedge with one Ga(1)O6 octahedra,  an edgeedge with one Ga(2)O6 octahedra, edges with two equivalent Ti(2)O6 octahedra, and edges with two equivalent Ga(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 25-31°. In the fourth Ga site, Ga(4) is bonded to one O(10), one O(5), one O(6), one O(7), one O(8), and one O(9) atom to form distorted GaO6 octahedra that share  a cornercorner with one Ti(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra,  an edgeedge with one Ga(1)O6 octahedra, edges with two equivalent Ti(2)O6 octahedra, and edges with two equivalent Ga(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 31-60°. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal non-coplanar geometry to one Ti(1), one Ga(1), and one Ga(2) atom. In the second O site, O(2) is bonded in a distorted trigonal non-coplanar geometry to one Ti(1), one Ga(1), and one Ga(2) atom. In the third O site, O(3) is bonded to one Ti(1), one Ga(1), one Ga(2), and one Ga(3) atom to form distorted OTiGa3 trigonal pyramids that share corners with two equivalent O(8)Ti2Ga2 tetrahedra,  a cornercorner with one O(4)Ti2Ga2 trigonal pyramid,  a cornercorner with one O(5)TiGa3 trigonal pyramid,  an edgeedge with one O(4)Ti2Ga2 trigonal pyramid,  an edgeedge with one O(5)TiGa3 trigonal pyramid,  an edgeedge with one O(6)TiGa3 trigonal pyramid, and  an edgeedge with one O(7)TiGa3 trigonal pyramid. In the fourth O site, O(4) is bonded to one Ti(1), one Ti(2), one Ga(1), and one Ga(2) atom to form distorted OTi2Ga2 trigonal pyramids that share  a cornercorner with one O(3)TiGa3 trigonal pyramid,  a cornercorner with one O(5)TiGa3 trigonal pyramid, corners with two equivalent O(6)TiGa3 trigonal pyramids,  an edgeedge with one O(8)Ti2Ga2 tetrahedra,  an edgeedge with one O(3)TiGa3 trigonal pyramid,  an edgeedge with one O(5)TiGa3 trigonal pyramid, and  an edgeedge with one O(7)TiGa3 trigonal pyramid. In the fifth O site, O(5) is bonded to one Ti(1), one Ga(1), one Ga(2), and one Ga(4) atom to form distorted OTiGa3 trigonal pyramids that share  a cornercorner with one O(4)Ti2Ga2 trigonal pyramid,  a cornercorner with one O(3)TiGa3 trigonal pyramid, corners with two equivalent O(7)TiGa3 trigonal pyramids,  an edgeedge with one O(8)Ti2Ga2 tetrahedra,  an edgeedge with one O(4)Ti2Ga2 trigonal pyramid,  an edgeedge with one O(3)TiGa3 trigonal pyramid, and  an edgeedge with one O(6)TiGa3 trigonal pyramid. In the sixth O site, O(6) is bonded to one Ti(2), one Ga(1), one Ga(3), and one Ga(4) atom to form distorted OTiGa3 trigonal pyramids that share  a cornercorner with one O(8)Ti2Ga2 tetrahedra,  a cornercorner with one O(7)TiGa3 trigonal pyramid, corners with two equivalent O(4)Ti2Ga2 trigonal pyramids,  an edgeedge with one O(8)Ti2Ga2 tetrahedra,  an edgeedge with one O(3)TiGa3 trigonal pyramid,  an edgeedge with one O(5)TiGa3 trigonal pyramid, and  an edgeedge with one O(7)TiGa3 trigonal pyramid. In the seventh O site, O(7) is bonded to one Ti(2), one Ga(2), one Ga(3), and one Ga(4) atom to form distorted OTiGa3 trigonal pyramids that share  a cornercorner with one O(8)Ti2Ga2 tetrahedra,  a cornercorner with one O(6)TiGa3 trigonal pyramid, corners with two equivalent O(5)TiGa3 trigonal pyramids,  an edgeedge with one O(8)Ti2Ga2 tetrahedra,  an edgeedge with one O(4)Ti2Ga2 trigonal pyramid,  an edgeedge with one O(3)TiGa3 trigonal pyramid, and  an edgeedge with one O(6)TiGa3 trigonal pyramid. In the eighth O site, O(8) is bonded to one Ti(1), one Ti(2), one Ga(3), and one Ga(4) atom to form distorted OTi2Ga2 tetrahedra that share  a cornercorner with one O(6)TiGa3 trigonal pyramid,  a cornercorner with one O(7)TiGa3 trigonal pyramid, corners with two equivalent O(3)TiGa3 trigonal pyramids,  an edgeedge with one O(4)Ti2Ga2 trigonal pyramid,  an edgeedge with one O(5)TiGa3 trigonal pyramid,  an edgeedge with one O(6)TiGa3 trigonal pyramid, and  an edgeedge with one O(7)TiGa3 trigonal pyramid. In the ninth O site, O(9) is bonded in a distorted T-shaped geometry to one Ti(2), one Ga(3), and one Ga(4) atom. In the tenth O site, O(10) is bonded in a distorted trigonal non-coplanar geometry to one Ti(2), one Ga(3), and one Ga(4) atom. is represented by the CIF card [CIF]
data_TiGa2O5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.416
_cell_length_b   5.280
_cell_length_c   10.036
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   110.484
_symmetry_Int_Tables_number   1
_cell_volume   368.109
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ti  Ti0  1  0.092  0.356  0.249  1.0
  Ti  Ti1  1  0.433  0.735  0.060  1.0
  Ti  Ti2  1  0.567  0.265  0.560  1.0
  Ti  Ti3  1  0.908  0.644  0.749  1.0
  Ga  Ga4  1  0.071  0.283  0.563  1.0
  Ga  Ga5  1  0.068  0.274  0.936  1.0
  Ga  Ga6  1  0.403  0.625  0.750  1.0
  Ga  Ga7  1  0.432  0.729  0.434  1.0
  Ga  Ga8  1  0.568  0.271  0.934  1.0
  Ga  Ga9  1  0.597  0.375  0.250  1.0
  Ga  Ga10  1  0.929  0.717  0.063  1.0
  Ga  Ga11  1  0.932  0.726  0.436  1.0
  O  O12  1  0.028  0.093  0.118  1.0
  O  O13  1  0.029  0.097  0.383  1.0
  O  O14  1  0.112  0.484  0.749  1.0
  O  O15  1  0.158  0.617  0.070  1.0
  O  O16  1  0.156  0.615  0.433  1.0
  O  O17  1  0.349  0.384  0.582  1.0
  O  O18  1  0.347  0.381  0.921  1.0
  O  O19  1  0.372  0.514  0.249  1.0
  O  O20  1  0.477  0.913  0.617  1.0
  O  O21  1  0.477  0.896  0.887  1.0
  O  O22  1  0.523  0.104  0.387  1.0
  O  O23  1  0.523  0.087  0.117  1.0
  O  O24  1  0.628  0.486  0.749  1.0
  O  O25  1  0.651  0.616  0.082  1.0
  O  O26  1  0.653  0.619  0.421  1.0
  O  O27  1  0.842  0.383  0.570  1.0
  O  O28  1  0.844  0.385  0.933  1.0
  O  O29  1  0.888  0.516  0.249  1.0
  O  O30  1  0.972  0.907  0.618  1.0
  O  O31  1  0.971  0.903  0.883  1.0
[/CIF]
.