The compound described by Ge5Si2N6 crystallizes in the monoclinic C2/c space group. There are three inequivalent Ge sites. In the first Ge site, Ge(1) is bonded in a water-like geometry to two equivalent N(1) atoms. In the second Ge site, Ge(2) is bonded in a distorted trigonal non-coplanar geometry to one N(1), one N(2), and one N(3) atom. In the third Ge site, Ge(3) is bonded in an L-shaped geometry to one N(1) and one N(3) atom. Si(1) is bonded to one N(1), one N(3), and two equivalent N(2) atoms to form edge-sharing SiN4 tetrahedra. There are three inequivalent N sites. In the first N site, N(2) is bonded in a distorted T-shaped geometry to one Ge(2) and two equivalent Si(1) atoms. In the second N site, N(3) is bonded in a trigonal non-coplanar geometry to one Ge(2), one Ge(3), and one Si(1) atom. In the third N site, N(1) is bonded to one Ge(1), one Ge(2), one Ge(3), and one Si(1) atom to form corner-sharing NSiGe3 tetrahedra. is represented by the CIF card [CIF]
data_Si2Ge5N6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.635
_cell_length_b   5.708
_cell_length_c   14.478
_cell_angle_alpha   90.000
_cell_angle_beta   83.558
_cell_angle_gamma   120.434
_symmetry_Int_Tables_number   1
_cell_volume   398.077
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.434  0.886  0.579  1.0
  Si  Si1  1  0.566  0.453  0.921  1.0
  Si  Si2  1  0.566  0.114  0.421  1.0
  Si  Si3  1  0.434  0.547  0.079  1.0
  Ge  Ge4  1  0.000  0.533  0.750  1.0
  Ge  Ge5  1  0.000  0.467  0.250  1.0
  Ge  Ge6  1  0.200  0.832  0.962  1.0
  Ge  Ge7  1  0.800  0.631  0.538  1.0
  Ge  Ge8  1  0.800  0.168  0.038  1.0
  Ge  Ge9  1  0.200  0.369  0.462  1.0
  Ge  Ge10  1  0.992  0.065  0.657  1.0
  Ge  Ge11  1  0.008  0.073  0.843  1.0
  Ge  Ge12  1  0.008  0.935  0.343  1.0
  Ge  Ge13  1  0.992  0.927  0.157  1.0
  N  N14  1  0.102  0.782  0.639  1.0
  N  N15  1  0.898  0.680  0.861  1.0
  N  N16  1  0.898  0.218  0.361  1.0
  N  N17  1  0.102  0.320  0.139  1.0
  N  N18  1  0.599  0.231  0.536  1.0
  N  N19  1  0.401  0.632  0.964  1.0
  N  N20  1  0.401  0.769  0.464  1.0
  N  N21  1  0.599  0.368  0.036  1.0
  N  N22  1  0.629  0.785  0.632  1.0
  N  N23  1  0.371  0.156  0.868  1.0
  N  N24  1  0.371  0.215  0.368  1.0
  N  N25  1  0.629  0.844  0.132  1.0
[/CIF]
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The compound described by Ge5Si2N6 crystallizes in the monoclinic C2/c space group. There are three inequivalent Ge sites. In the first Ge site, Ge(1) is bonded in a water-like geometry to two equivalent N(1) atoms. In the second Ge site, Ge(2) is bonded in a distorted trigonal non-coplanar geometry to one N(1), one N(2), and one N(3) atom. In the third Ge site, Ge(3) is bonded in an L-shaped geometry to one N(1) and one N(3) atom. Si(1) is bonded to one N(1), one N(3), and two equivalent N(2) atoms to form edge-sharing SiN4 tetrahedra. There are three inequivalent N sites. In the first N site, N(2) is bonded in a distorted T-shaped geometry to one Ge(2) and two equivalent Si(1) atoms. In the second N site, N(3) is bonded in a trigonal non-coplanar geometry to one Ge(2), one Ge(3), and one Si(1) atom. In the third N site, N(1) is bonded to one Ge(1), one Ge(2), one Ge(3), and one Si(1) atom to form corner-sharing NSiGe3 tetrahedra. is represented by the CIF card [CIF]
data_Si2Ge5N6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.635
_cell_length_b   5.708
_cell_length_c   14.478
_cell_angle_alpha   90.000
_cell_angle_beta   83.558
_cell_angle_gamma   120.434
_symmetry_Int_Tables_number   1
_cell_volume   398.077
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.434  0.886  0.579  1.0
  Si  Si1  1  0.566  0.453  0.921  1.0
  Si  Si2  1  0.566  0.114  0.421  1.0
  Si  Si3  1  0.434  0.547  0.079  1.0
  Ge  Ge4  1  0.000  0.533  0.750  1.0
  Ge  Ge5  1  0.000  0.467  0.250  1.0
  Ge  Ge6  1  0.200  0.832  0.962  1.0
  Ge  Ge7  1  0.800  0.631  0.538  1.0
  Ge  Ge8  1  0.800  0.168  0.038  1.0
  Ge  Ge9  1  0.200  0.369  0.462  1.0
  Ge  Ge10  1  0.992  0.065  0.657  1.0
  Ge  Ge11  1  0.008  0.073  0.843  1.0
  Ge  Ge12  1  0.008  0.935  0.343  1.0
  Ge  Ge13  1  0.992  0.927  0.157  1.0
  N  N14  1  0.102  0.782  0.639  1.0
  N  N15  1  0.898  0.680  0.861  1.0
  N  N16  1  0.898  0.218  0.361  1.0
  N  N17  1  0.102  0.320  0.139  1.0
  N  N18  1  0.599  0.231  0.536  1.0
  N  N19  1  0.401  0.632  0.964  1.0
  N  N20  1  0.401  0.769  0.464  1.0
  N  N21  1  0.599  0.368  0.036  1.0
  N  N22  1  0.629  0.785  0.632  1.0
  N  N23  1  0.371  0.156  0.868  1.0
  N  N24  1  0.371  0.215  0.368  1.0
  N  N25  1  0.629  0.844  0.132  1.0
[/CIF]
.