The compound described by Cd2AgGaSe4 is Stannite-like structured and crystallizes in the monoclinic Pm space group. Ag(1) is bonded to one Se(3), one Se(4), and two equivalent Se(2) atoms to form AgSe4 tetrahedra that share corners with two equivalent Ag(1)Se4 tetrahedra, corners with two equivalent Ga(1)Se4 tetrahedra, corners with four equivalent Cd(1)Se4 tetrahedra, and corners with four equivalent Cd(2)Se4 tetrahedra. There are two inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one Se(1), one Se(2), and two equivalent Se(3) atoms to form CdSe4 tetrahedra that share corners with two equivalent Cd(1)Se4 tetrahedra, corners with two equivalent Cd(2)Se4 tetrahedra, corners with four equivalent Ag(1)Se4 tetrahedra, and corners with four equivalent Ga(1)Se4 tetrahedra. In the second Cd site, Cd(2) is bonded to one Se(1), one Se(2), and two equivalent Se(4) atoms to form CdSe4 tetrahedra that share corners with two equivalent Cd(1)Se4 tetrahedra, corners with two equivalent Cd(2)Se4 tetrahedra, corners with four equivalent Ag(1)Se4 tetrahedra, and corners with four equivalent Ga(1)Se4 tetrahedra. Ga(1) is bonded to one Se(3), one Se(4), and two equivalent Se(1) atoms to form GaSe4 tetrahedra that share corners with two equivalent Ag(1)Se4 tetrahedra, corners with two equivalent Ga(1)Se4 tetrahedra, corners with four equivalent Cd(1)Se4 tetrahedra, and corners with four equivalent Cd(2)Se4 tetrahedra. There are four inequivalent Se sites. In the first Se site, Se(1) is bonded to one Cd(1), one Cd(2), and two equivalent Ga(1) atoms to form SeCd2Ga2 tetrahedra that share corners with two equivalent Se(2)Cd2Ag2 tetrahedra, corners with two equivalent Se(1)Cd2Ga2 tetrahedra, corners with four equivalent Se(3)Cd2GaAg tetrahedra, and corners with four equivalent Se(4)Cd2GaAg tetrahedra. In the second Se site, Se(2) is bonded to two equivalent Ag(1), one Cd(1), and one Cd(2) atom to form SeCd2Ag2 tetrahedra that share corners with two equivalent Se(2)Cd2Ag2 tetrahedra, corners with two equivalent Se(1)Cd2Ga2 tetrahedra, corners with four equivalent Se(3)Cd2GaAg tetrahedra, and corners with four equivalent Se(4)Cd2GaAg tetrahedra. In the third Se site, Se(3) is bonded to one Ag(1), two equivalent Cd(1), and one Ga(1) atom to form SeCd2GaAg tetrahedra that share corners with two equivalent Se(3)Cd2GaAg tetrahedra, corners with two equivalent Se(4)Cd2GaAg tetrahedra, corners with four equivalent Se(2)Cd2Ag2 tetrahedra, and corners with four equivalent Se(1)Cd2Ga2 tetrahedra. In the fourth Se site, Se(4) is bonded to one Ag(1), two equivalent Cd(2), and one Ga(1) atom to form SeCd2GaAg tetrahedra that share corners with two equivalent Se(3)Cd2GaAg tetrahedra, corners with two equivalent Se(4)Cd2GaAg tetrahedra, corners with four equivalent Se(2)Cd2Ag2 tetrahedra, and corners with four equivalent Se(1)Cd2Ga2 tetrahedra. is represented by the CIF card [CIF]
data_Cd2GaAgSe4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.284
_cell_length_b   7.054
_cell_length_c   7.520
_cell_angle_alpha   89.654
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   227.268
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cd  Cd0  1  0.500  0.998  0.168  1.0
  Cd  Cd1  1  0.500  0.467  0.818  1.0
  Ga  Ga2  1  0.000  0.475  0.341  1.0
  Ag  Ag3  1  0.000  0.990  0.672  1.0
  Se  Se4  1  0.500  0.600  0.181  1.0
  Se  Se5  1  0.500  0.098  0.837  1.0
  Se  Se6  1  0.000  0.130  0.343  1.0
  Se  Se7  1  0.000  0.612  0.639  1.0
[/CIF]
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The compound described by Cd2AgGaSe4 is Stannite-like structured and crystallizes in the monoclinic Pm space group. Ag(1) is bonded to one Se(3), one Se(4), and two equivalent Se(2) atoms to form AgSe4 tetrahedra that share corners with two equivalent Ag(1)Se4 tetrahedra, corners with two equivalent Ga(1)Se4 tetrahedra, corners with four equivalent Cd(1)Se4 tetrahedra, and corners with four equivalent Cd(2)Se4 tetrahedra. There are two inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one Se(1), one Se(2), and two equivalent Se(3) atoms to form CdSe4 tetrahedra that share corners with two equivalent Cd(1)Se4 tetrahedra, corners with two equivalent Cd(2)Se4 tetrahedra, corners with four equivalent Ag(1)Se4 tetrahedra, and corners with four equivalent Ga(1)Se4 tetrahedra. In the second Cd site, Cd(2) is bonded to one Se(1), one Se(2), and two equivalent Se(4) atoms to form CdSe4 tetrahedra that share corners with two equivalent Cd(1)Se4 tetrahedra, corners with two equivalent Cd(2)Se4 tetrahedra, corners with four equivalent Ag(1)Se4 tetrahedra, and corners with four equivalent Ga(1)Se4 tetrahedra. Ga(1) is bonded to one Se(3), one Se(4), and two equivalent Se(1) atoms to form GaSe4 tetrahedra that share corners with two equivalent Ag(1)Se4 tetrahedra, corners with two equivalent Ga(1)Se4 tetrahedra, corners with four equivalent Cd(1)Se4 tetrahedra, and corners with four equivalent Cd(2)Se4 tetrahedra. There are four inequivalent Se sites. In the first Se site, Se(1) is bonded to one Cd(1), one Cd(2), and two equivalent Ga(1) atoms to form SeCd2Ga2 tetrahedra that share corners with two equivalent Se(2)Cd2Ag2 tetrahedra, corners with two equivalent Se(1)Cd2Ga2 tetrahedra, corners with four equivalent Se(3)Cd2GaAg tetrahedra, and corners with four equivalent Se(4)Cd2GaAg tetrahedra. In the second Se site, Se(2) is bonded to two equivalent Ag(1), one Cd(1), and one Cd(2) atom to form SeCd2Ag2 tetrahedra that share corners with two equivalent Se(2)Cd2Ag2 tetrahedra, corners with two equivalent Se(1)Cd2Ga2 tetrahedra, corners with four equivalent Se(3)Cd2GaAg tetrahedra, and corners with four equivalent Se(4)Cd2GaAg tetrahedra. In the third Se site, Se(3) is bonded to one Ag(1), two equivalent Cd(1), and one Ga(1) atom to form SeCd2GaAg tetrahedra that share corners with two equivalent Se(3)Cd2GaAg tetrahedra, corners with two equivalent Se(4)Cd2GaAg tetrahedra, corners with four equivalent Se(2)Cd2Ag2 tetrahedra, and corners with four equivalent Se(1)Cd2Ga2 tetrahedra. In the fourth Se site, Se(4) is bonded to one Ag(1), two equivalent Cd(2), and one Ga(1) atom to form SeCd2GaAg tetrahedra that share corners with two equivalent Se(3)Cd2GaAg tetrahedra, corners with two equivalent Se(4)Cd2GaAg tetrahedra, corners with four equivalent Se(2)Cd2Ag2 tetrahedra, and corners with four equivalent Se(1)Cd2Ga2 tetrahedra. is represented by the CIF card [CIF]
data_Cd2GaAgSe4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.284
_cell_length_b   7.054
_cell_length_c   7.520
_cell_angle_alpha   89.654
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   227.268
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cd  Cd0  1  0.500  0.998  0.168  1.0
  Cd  Cd1  1  0.500  0.467  0.818  1.0
  Ga  Ga2  1  0.000  0.475  0.341  1.0
  Ag  Ag3  1  0.000  0.990  0.672  1.0
  Se  Se4  1  0.500  0.600  0.181  1.0
  Se  Se5  1  0.500  0.098  0.837  1.0
  Se  Se6  1  0.000  0.130  0.343  1.0
  Se  Se7  1  0.000  0.612  0.639  1.0
[/CIF]
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