The material structure described by InGaSb2 is Chalcopyrite-like structured and crystallizes in the trigonal R3m space group. In(1) is bonded to one Sb(2) and three equivalent Sb(1) atoms to form InSb4 tetrahedra that share corners with six equivalent In(1)Sb4 tetrahedra and corners with six equivalent Ga(1)Sb4 tetrahedra. Ga(1) is bonded to one Sb(1) and three equivalent Sb(2) atoms to form GaSb4 tetrahedra that share corners with six equivalent In(1)Sb4 tetrahedra and corners with six equivalent Ga(1)Sb4 tetrahedra. There are two inequivalent Sb sites. In the first Sb site, Sb(1) is bonded to three equivalent In(1) and one Ga(1) atom to form SbIn3Ga tetrahedra that share corners with six equivalent Sb(1)In3Ga tetrahedra and corners with six equivalent Sb(2)InGa3 tetrahedra. In the second Sb site, Sb(2) is bonded to one In(1) and three equivalent Ga(1) atoms to form SbInGa3 tetrahedra that share corners with six equivalent Sb(1)In3Ga tetrahedra and corners with six equivalent Sb(2)InGa3 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_InGaSb2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.878
_cell_length_b   7.878
_cell_length_c   7.878
_cell_angle_alpha   33.649
_cell_angle_beta   33.649
_cell_angle_gamma   33.649
_symmetry_Int_Tables_number   1
_cell_volume   133.715
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.500  0.500  0.500  1.0
  Ga  Ga1  1  1.000  1.000  1.000  1.0
  Sb  Sb2  1  0.121  0.121  0.121  1.0
  Sb  Sb3  1  0.629  0.629  0.629  1.0
[/CIF]
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The material structure described by InGaSb2 is Chalcopyrite-like structured and crystallizes in the trigonal R3m space group. In(1) is bonded to one Sb(2) and three equivalent Sb(1) atoms to form InSb4 tetrahedra that share corners with six equivalent In(1)Sb4 tetrahedra and corners with six equivalent Ga(1)Sb4 tetrahedra. Ga(1) is bonded to one Sb(1) and three equivalent Sb(2) atoms to form GaSb4 tetrahedra that share corners with six equivalent In(1)Sb4 tetrahedra and corners with six equivalent Ga(1)Sb4 tetrahedra. There are two inequivalent Sb sites. In the first Sb site, Sb(1) is bonded to three equivalent In(1) and one Ga(1) atom to form SbIn3Ga tetrahedra that share corners with six equivalent Sb(1)In3Ga tetrahedra and corners with six equivalent Sb(2)InGa3 tetrahedra. In the second Sb site, Sb(2) is bonded to one In(1) and three equivalent Ga(1) atoms to form SbInGa3 tetrahedra that share corners with six equivalent Sb(1)In3Ga tetrahedra and corners with six equivalent Sb(2)InGa3 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_InGaSb2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.878
_cell_length_b   7.878
_cell_length_c   7.878
_cell_angle_alpha   33.649
_cell_angle_beta   33.649
_cell_angle_gamma   33.649
_symmetry_Int_Tables_number   1
_cell_volume   133.715
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.500  0.500  0.500  1.0
  Ga  Ga1  1  1.000  1.000  1.000  1.0
  Sb  Sb2  1  0.121  0.121  0.121  1.0
  Sb  Sb3  1  0.629  0.629  0.629  1.0
[/CIF]
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