The compound described by Cs5AgSi3O9 crystallizes in the monoclinic P2_1/m space group. There are five inequivalent Cs sites. In the first Cs site, Cs(1) is bonded in a 8-coordinate geometry to two equivalent O(2), two equivalent O(4), and four equivalent O(3) atoms. In the second Cs site, Cs(2) is bonded in a 9-coordinate geometry to two equivalent O(2), three equivalent O(5), and four equivalent O(1) atoms. In the third Cs site, Cs(3) is bonded in a 2-coordinate geometry to two equivalent O(1) atoms. In the fourth Cs site, Cs(4) is bonded in a 2-coordinate geometry to two equivalent O(3) atoms. In the fifth Cs site, Cs(5) is bonded in a 9-coordinate geometry to two equivalent O(3), three equivalent O(6), and four equivalent O(1) atoms. Ag(1) is bonded in a linear geometry to two equivalent O(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(4), one O(5), and two equivalent O(2) atoms to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(4), one O(6), and two equivalent O(3) atoms to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(5), one O(6), and two equivalent O(1) atoms to form corner-sharing SiO4 tetrahedra. There are six inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to one Cs(3), two equivalent Cs(2), two equivalent Cs(5), and one Si(3) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to one Cs(1), one Cs(2), one Ag(1), and one Si(1) atom. In the third O site, O(3) is bonded in a distorted single-bond geometry to one Cs(4), one Cs(5), two equivalent Cs(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted bent 120 degrees geometry to two equivalent Cs(1), one Si(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a distorted bent 120 degrees geometry to three equivalent Cs(2), one Si(1), and one Si(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 150 degrees geometry to three equivalent Cs(5), one Si(2), and one Si(3) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Cs5Si3AgO9
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.620
_cell_length_b   9.893
_cell_length_c   11.797
_cell_angle_alpha   86.181
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   770.964
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.250  0.339  0.063  1.0
  Cs  Cs1  1  0.750  0.952  0.619  1.0
  Cs  Cs2  1  0.250  0.223  0.686  1.0
  Cs  Cs3  1  0.250  0.048  0.381  1.0
  Cs  Cs4  1  0.250  0.726  0.142  1.0
  Cs  Cs5  1  0.250  0.461  0.398  1.0
  Cs  Cs6  1  0.750  0.661  0.937  1.0
  Cs  Cs7  1  0.750  0.539  0.602  1.0
  Cs  Cs8  1  0.750  0.274  0.858  1.0
  Cs  Cs9  1  0.750  0.777  0.314  1.0
  Si  Si10  1  0.250  0.870  0.799  1.0
  Si  Si11  1  0.750  0.130  0.201  1.0
  Si  Si12  1  0.250  0.557  0.790  1.0
  Si  Si13  1  0.750  0.254  0.435  1.0
  Si  Si14  1  0.250  0.746  0.565  1.0
  Si  Si15  1  0.750  0.443  0.210  1.0
  Ag  Ag16  1  0.000  0.000  0.000  1.0
  Ag  Ag17  1  0.500  0.000  0.000  1.0
  O  O18  1  0.457  0.757  0.492  1.0
  O  O19  1  0.958  0.053  0.165  1.0
  O  O20  1  0.458  0.947  0.835  1.0
  O  O21  1  0.456  0.476  0.825  1.0
  O  O22  1  0.957  0.243  0.508  1.0
  O  O23  1  0.044  0.476  0.825  1.0
  O  O24  1  0.250  0.709  0.853  1.0
  O  O25  1  0.750  0.129  0.341  1.0
  O  O26  1  0.750  0.399  0.350  1.0
  O  O27  1  0.042  0.947  0.835  1.0
  O  O28  1  0.250  0.601  0.650  1.0
  O  O29  1  0.542  0.053  0.165  1.0
  O  O30  1  0.750  0.291  0.147  1.0
  O  O31  1  0.543  0.243  0.508  1.0
  O  O32  1  0.544  0.524  0.175  1.0
  O  O33  1  0.043  0.757  0.492  1.0
  O  O34  1  0.956  0.524  0.175  1.0
  O  O35  1  0.250  0.871  0.659  1.0
[/CIF]
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The compound described by Cs5AgSi3O9 crystallizes in the monoclinic P2_1/m space group. There are five inequivalent Cs sites. In the first Cs site, Cs(1) is bonded in a 8-coordinate geometry to two equivalent O(2), two equivalent O(4), and four equivalent O(3) atoms. In the second Cs site, Cs(2) is bonded in a 9-coordinate geometry to two equivalent O(2), three equivalent O(5), and four equivalent O(1) atoms. In the third Cs site, Cs(3) is bonded in a 2-coordinate geometry to two equivalent O(1) atoms. In the fourth Cs site, Cs(4) is bonded in a 2-coordinate geometry to two equivalent O(3) atoms. In the fifth Cs site, Cs(5) is bonded in a 9-coordinate geometry to two equivalent O(3), three equivalent O(6), and four equivalent O(1) atoms. Ag(1) is bonded in a linear geometry to two equivalent O(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(4), one O(5), and two equivalent O(2) atoms to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(4), one O(6), and two equivalent O(3) atoms to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(5), one O(6), and two equivalent O(1) atoms to form corner-sharing SiO4 tetrahedra. There are six inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to one Cs(3), two equivalent Cs(2), two equivalent Cs(5), and one Si(3) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to one Cs(1), one Cs(2), one Ag(1), and one Si(1) atom. In the third O site, O(3) is bonded in a distorted single-bond geometry to one Cs(4), one Cs(5), two equivalent Cs(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted bent 120 degrees geometry to two equivalent Cs(1), one Si(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a distorted bent 120 degrees geometry to three equivalent Cs(2), one Si(1), and one Si(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 150 degrees geometry to three equivalent Cs(5), one Si(2), and one Si(3) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Cs5Si3AgO9
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.620
_cell_length_b   9.893
_cell_length_c   11.797
_cell_angle_alpha   86.181
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   770.964
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.250  0.339  0.063  1.0
  Cs  Cs1  1  0.750  0.952  0.619  1.0
  Cs  Cs2  1  0.250  0.223  0.686  1.0
  Cs  Cs3  1  0.250  0.048  0.381  1.0
  Cs  Cs4  1  0.250  0.726  0.142  1.0
  Cs  Cs5  1  0.250  0.461  0.398  1.0
  Cs  Cs6  1  0.750  0.661  0.937  1.0
  Cs  Cs7  1  0.750  0.539  0.602  1.0
  Cs  Cs8  1  0.750  0.274  0.858  1.0
  Cs  Cs9  1  0.750  0.777  0.314  1.0
  Si  Si10  1  0.250  0.870  0.799  1.0
  Si  Si11  1  0.750  0.130  0.201  1.0
  Si  Si12  1  0.250  0.557  0.790  1.0
  Si  Si13  1  0.750  0.254  0.435  1.0
  Si  Si14  1  0.250  0.746  0.565  1.0
  Si  Si15  1  0.750  0.443  0.210  1.0
  Ag  Ag16  1  0.000  0.000  0.000  1.0
  Ag  Ag17  1  0.500  0.000  0.000  1.0
  O  O18  1  0.457  0.757  0.492  1.0
  O  O19  1  0.958  0.053  0.165  1.0
  O  O20  1  0.458  0.947  0.835  1.0
  O  O21  1  0.456  0.476  0.825  1.0
  O  O22  1  0.957  0.243  0.508  1.0
  O  O23  1  0.044  0.476  0.825  1.0
  O  O24  1  0.250  0.709  0.853  1.0
  O  O25  1  0.750  0.129  0.341  1.0
  O  O26  1  0.750  0.399  0.350  1.0
  O  O27  1  0.042  0.947  0.835  1.0
  O  O28  1  0.250  0.601  0.650  1.0
  O  O29  1  0.542  0.053  0.165  1.0
  O  O30  1  0.750  0.291  0.147  1.0
  O  O31  1  0.543  0.243  0.508  1.0
  O  O32  1  0.544  0.524  0.175  1.0
  O  O33  1  0.043  0.757  0.492  1.0
  O  O34  1  0.956  0.524  0.175  1.0
  O  O35  1  0.250  0.871  0.659  1.0
[/CIF]
.