The compound described by Si2H6O is High Pressure (4-7GPa) Tellurium structured and crystallizes in the orthorhombic P2_12_12_1 space group. The structure is zero-dimensional and consists of four disiloxane molecules. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one H(1), one H(2), one H(3), and one O(1) atom to form corner-sharing SiH3O tetrahedra. In the second Si site, Si(2) is bonded to one H(4), one H(5), one H(6), and one O(1) atom to form corner-sharing SiH3O tetrahedra. There are six inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one Si(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one Si(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Si(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one Si(2) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one Si(2) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one Si(2) atom. O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. is represented by the CIF card [CIF]
data_Si2H6O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.907
_cell_length_b   7.955
_cell_length_c   13.611
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   531.344
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.228  0.491  0.048  1.0
  Si  Si1  1  0.728  0.009  0.952  1.0
  Si  Si2  1  0.772  0.991  0.452  1.0
  Si  Si3  1  0.272  0.509  0.548  1.0
  Si  Si4  1  0.462  0.282  0.223  1.0
  Si  Si5  1  0.962  0.218  0.777  1.0
  Si  Si6  1  0.538  0.782  0.277  1.0
  Si  Si7  1  0.038  0.718  0.723  1.0
  H  H8  1  0.042  0.353  0.014  1.0
  H  H9  1  0.542  0.147  0.986  1.0
  H  H10  1  0.958  0.853  0.486  1.0
  H  H11  1  0.458  0.647  0.514  1.0
  H  H12  1  0.070  0.650  0.059  1.0
  H  H13  1  0.570  0.850  0.941  1.0
  H  H14  1  0.930  0.150  0.441  1.0
  H  H15  1  0.430  0.350  0.559  1.0
  H  H16  1  0.448  0.514  0.974  1.0
  H  H17  1  0.948  0.986  0.026  1.0
  H  H18  1  0.552  0.014  0.526  1.0
  H  H19  1  0.052  0.486  0.474  1.0
  H  H20  1  0.756  0.249  0.205  1.0
  H  H21  1  0.256  0.251  0.795  1.0
  H  H22  1  0.244  0.749  0.295  1.0
  H  H23  1  0.744  0.751  0.705  1.0
  H  H24  1  0.420  0.329  0.328  1.0
  H  H25  1  0.920  0.171  0.672  1.0
  H  H26  1  0.580  0.829  0.172  1.0
  H  H27  1  0.080  0.671  0.828  1.0
  H  H28  1  0.297  0.131  0.198  1.0
  H  H29  1  0.797  0.369  0.802  1.0
  H  H30  1  0.703  0.631  0.302  1.0
  H  H31  1  0.203  0.869  0.698  1.0
  O  O32  1  0.361  0.444  0.156  1.0
  O  O33  1  0.861  0.056  0.844  1.0
  O  O34  1  0.639  0.944  0.344  1.0
  O  O35  1  0.139  0.556  0.656  1.0
[/CIF]
.
The compound described by Si2H6O is High Pressure (4-7GPa) Tellurium structured and crystallizes in the orthorhombic P2_12_12_1 space group. The structure is zero-dimensional and consists of four disiloxane molecules. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one H(1), one H(2), one H(3), and one O(1) atom to form corner-sharing SiH3O tetrahedra. In the second Si site, Si(2) is bonded to one H(4), one H(5), one H(6), and one O(1) atom to form corner-sharing SiH3O tetrahedra. There are six inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one Si(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one Si(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Si(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one Si(2) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one Si(2) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one Si(2) atom. O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. is represented by the CIF card [CIF]
data_Si2H6O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.907
_cell_length_b   7.955
_cell_length_c   13.611
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   531.344
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.228  0.491  0.048  1.0
  Si  Si1  1  0.728  0.009  0.952  1.0
  Si  Si2  1  0.772  0.991  0.452  1.0
  Si  Si3  1  0.272  0.509  0.548  1.0
  Si  Si4  1  0.462  0.282  0.223  1.0
  Si  Si5  1  0.962  0.218  0.777  1.0
  Si  Si6  1  0.538  0.782  0.277  1.0
  Si  Si7  1  0.038  0.718  0.723  1.0
  H  H8  1  0.042  0.353  0.014  1.0
  H  H9  1  0.542  0.147  0.986  1.0
  H  H10  1  0.958  0.853  0.486  1.0
  H  H11  1  0.458  0.647  0.514  1.0
  H  H12  1  0.070  0.650  0.059  1.0
  H  H13  1  0.570  0.850  0.941  1.0
  H  H14  1  0.930  0.150  0.441  1.0
  H  H15  1  0.430  0.350  0.559  1.0
  H  H16  1  0.448  0.514  0.974  1.0
  H  H17  1  0.948  0.986  0.026  1.0
  H  H18  1  0.552  0.014  0.526  1.0
  H  H19  1  0.052  0.486  0.474  1.0
  H  H20  1  0.756  0.249  0.205  1.0
  H  H21  1  0.256  0.251  0.795  1.0
  H  H22  1  0.244  0.749  0.295  1.0
  H  H23  1  0.744  0.751  0.705  1.0
  H  H24  1  0.420  0.329  0.328  1.0
  H  H25  1  0.920  0.171  0.672  1.0
  H  H26  1  0.580  0.829  0.172  1.0
  H  H27  1  0.080  0.671  0.828  1.0
  H  H28  1  0.297  0.131  0.198  1.0
  H  H29  1  0.797  0.369  0.802  1.0
  H  H30  1  0.703  0.631  0.302  1.0
  H  H31  1  0.203  0.869  0.698  1.0
  O  O32  1  0.361  0.444  0.156  1.0
  O  O33  1  0.861  0.056  0.844  1.0
  O  O34  1  0.639  0.944  0.344  1.0
  O  O35  1  0.139  0.556  0.656  1.0
[/CIF]
.