The material structure described by GaC3PH9OCl3 is Indium-like structured and crystallizes in the monoclinic Cc space group. The structure is zero-dimensional and consists of four GaC3PH9OCl3 clusters. Ga(1) is bonded to one O(1), one Cl(1), one Cl(2), and one Cl(3) atom to form GaCl3O tetrahedra that share  a cornercorner with one P(1)C3O tetrahedra. There are three inequivalent C sites. In the first C site, C(1) is bonded to one P(1); one H(1); one H(2,5); and one H(3) atom to form distorted corner-sharing CPH3 tetrahedra. In the second C site, C(2) is bonded to one P(1); one H(2,5); one H(4); and one H(6) atom to form distorted corner-sharing CPH3 tetrahedra. In the third C site, C(3) is bonded to one P(1); one H(8); and two equivalent H(7,9) atoms to form distorted corner-sharing CPH3 tetrahedra. P(1) is bonded to one C(1), one C(2), one C(3), and one O(1) atom to form PC3O tetrahedra that share  a cornercorner with one Ga(1)Cl3O tetrahedra. There are seven inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the second H site, H(2,5) is bonded in a single-bond geometry to one C(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one C(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one C(2) atom. In the fifth H site, H(6) is bonded in a single-bond geometry to one C(2) atom. In the sixth H site, H(7,9) is bonded in a single-bond geometry to one C(3) atom. In the seventh H site, H(8) is bonded in a single-bond geometry to one C(3) atom. O(1) is bonded in a bent 150 degrees geometry to one Ga(1) and one P(1) atom. There are three inequivalent Cl sites. In the first Cl site, Cl(1) is bonded in a single-bond geometry to one Ga(1) atom. In the second Cl site, Cl(2) is bonded in a single-bond geometry to one Ga(1) atom. In the third Cl site, Cl(3) is bonded in a single-bond geometry to one Ga(1) atom. is represented by the CIF card [CIF]
data_GaPH9C3Cl3O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.929
_cell_length_b   6.929
_cell_length_c   13.044
_cell_angle_alpha   80.985
_cell_angle_beta   80.985
_cell_angle_gamma   103.227
_symmetry_Int_Tables_number   1
_cell_volume   589.886
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.044  0.542  0.486  1.0
  Ga  Ga1  1  0.542  0.044  0.986  1.0
  P  P2  1  0.236  0.723  0.678  1.0
  P  P3  1  0.723  0.236  0.178  1.0
  H  H4  1  0.548  0.869  0.553  1.0
  H  H5  1  0.869  0.548  0.053  1.0
  H  H6  1  0.562  0.937  0.679  1.0
  H  H7  1  0.937  0.562  0.179  1.0
  H  H8  1  0.431  0.059  0.591  1.0
  H  H9  1  0.059  0.431  0.091  1.0
  H  H10  1  0.164  0.393  0.787  1.0
  H  H11  1  0.393  0.164  0.287  1.0
  H  H12  1  0.410  0.544  0.789  1.0
  H  H13  1  0.544  0.410  0.289  1.0
  H  H14  1  0.369  0.435  0.676  1.0
  H  H15  1  0.435  0.369  0.176  1.0
  H  H16  1  0.057  0.951  0.743  1.0
  H  H17  1  0.951  0.057  0.243  1.0
  H  H18  1  0.180  0.845  0.840  1.0
  H  H19  1  0.845  0.180  0.340  1.0
  H  H20  1  0.951  0.697  0.815  1.0
  H  H21  1  0.697  0.951  0.315  1.0
  C  C22  1  0.466  0.916  0.620  1.0
  C  C23  1  0.916  0.466  0.120  1.0
  C  C24  1  0.301  0.502  0.738  1.0
  C  C25  1  0.502  0.301  0.238  1.0
  C  C26  1  0.093  0.813  0.779  1.0
  C  C27  1  0.813  0.093  0.279  1.0
  Cl  Cl28  1  0.084  0.236  0.524  1.0
  Cl  Cl29  1  0.236  0.084  0.024  1.0
  Cl  Cl30  1  0.728  0.530  0.479  1.0
  Cl  Cl31  1  0.530  0.728  0.979  1.0
  Cl  Cl32  1  0.242  0.714  0.337  1.0
  Cl  Cl33  1  0.714  0.242  0.837  1.0
  O  O34  1  0.104  0.680  0.595  1.0
  O  O35  1  0.680  0.104  0.095  1.0
[/CIF]
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The material structure described by GaC3PH9OCl3 is Indium-like structured and crystallizes in the monoclinic Cc space group. The structure is zero-dimensional and consists of four GaC3PH9OCl3 clusters. Ga(1) is bonded to one O(1), one Cl(1), one Cl(2), and one Cl(3) atom to form GaCl3O tetrahedra that share  a cornercorner with one P(1)C3O tetrahedra. There are three inequivalent C sites. In the first C site, C(1) is bonded to one P(1); one H(1); one H(2,5); and one H(3) atom to form distorted corner-sharing CPH3 tetrahedra. In the second C site, C(2) is bonded to one P(1); one H(2,5); one H(4); and one H(6) atom to form distorted corner-sharing CPH3 tetrahedra. In the third C site, C(3) is bonded to one P(1); one H(8); and two equivalent H(7,9) atoms to form distorted corner-sharing CPH3 tetrahedra. P(1) is bonded to one C(1), one C(2), one C(3), and one O(1) atom to form PC3O tetrahedra that share  a cornercorner with one Ga(1)Cl3O tetrahedra. There are seven inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the second H site, H(2,5) is bonded in a single-bond geometry to one C(1) atom. In the third H site, H(3) is bonded in a single-bond geometry to one C(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one C(2) atom. In the fifth H site, H(6) is bonded in a single-bond geometry to one C(2) atom. In the sixth H site, H(7,9) is bonded in a single-bond geometry to one C(3) atom. In the seventh H site, H(8) is bonded in a single-bond geometry to one C(3) atom. O(1) is bonded in a bent 150 degrees geometry to one Ga(1) and one P(1) atom. There are three inequivalent Cl sites. In the first Cl site, Cl(1) is bonded in a single-bond geometry to one Ga(1) atom. In the second Cl site, Cl(2) is bonded in a single-bond geometry to one Ga(1) atom. In the third Cl site, Cl(3) is bonded in a single-bond geometry to one Ga(1) atom. is represented by the CIF card [CIF]
data_GaPH9C3Cl3O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.929
_cell_length_b   6.929
_cell_length_c   13.044
_cell_angle_alpha   80.985
_cell_angle_beta   80.985
_cell_angle_gamma   103.227
_symmetry_Int_Tables_number   1
_cell_volume   589.886
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.044  0.542  0.486  1.0
  Ga  Ga1  1  0.542  0.044  0.986  1.0
  P  P2  1  0.236  0.723  0.678  1.0
  P  P3  1  0.723  0.236  0.178  1.0
  H  H4  1  0.548  0.869  0.553  1.0
  H  H5  1  0.869  0.548  0.053  1.0
  H  H6  1  0.562  0.937  0.679  1.0
  H  H7  1  0.937  0.562  0.179  1.0
  H  H8  1  0.431  0.059  0.591  1.0
  H  H9  1  0.059  0.431  0.091  1.0
  H  H10  1  0.164  0.393  0.787  1.0
  H  H11  1  0.393  0.164  0.287  1.0
  H  H12  1  0.410  0.544  0.789  1.0
  H  H13  1  0.544  0.410  0.289  1.0
  H  H14  1  0.369  0.435  0.676  1.0
  H  H15  1  0.435  0.369  0.176  1.0
  H  H16  1  0.057  0.951  0.743  1.0
  H  H17  1  0.951  0.057  0.243  1.0
  H  H18  1  0.180  0.845  0.840  1.0
  H  H19  1  0.845  0.180  0.340  1.0
  H  H20  1  0.951  0.697  0.815  1.0
  H  H21  1  0.697  0.951  0.315  1.0
  C  C22  1  0.466  0.916  0.620  1.0
  C  C23  1  0.916  0.466  0.120  1.0
  C  C24  1  0.301  0.502  0.738  1.0
  C  C25  1  0.502  0.301  0.238  1.0
  C  C26  1  0.093  0.813  0.779  1.0
  C  C27  1  0.813  0.093  0.279  1.0
  Cl  Cl28  1  0.084  0.236  0.524  1.0
  Cl  Cl29  1  0.236  0.084  0.024  1.0
  Cl  Cl30  1  0.728  0.530  0.479  1.0
  Cl  Cl31  1  0.530  0.728  0.979  1.0
  Cl  Cl32  1  0.242  0.714  0.337  1.0
  Cl  Cl33  1  0.714  0.242  0.837  1.0
  O  O34  1  0.104  0.680  0.595  1.0
  O  O35  1  0.680  0.104  0.095  1.0
[/CIF]
.