The material structure described by KHoCoSi2O7 crystallizes in the monoclinic C2 space group. K(1) is bonded in a 8-coordinate geometry to one O(3), one O(4), one O(5), one O(6), one O(7), one O(8), and two equivalent O(1) atoms. Ho(1) is bonded in a 8-coordinate geometry to one O(1), one O(2), one O(3), one O(4), one O(5), one O(6), and two equivalent O(7) atoms. There are two inequivalent Co sites. In the first Co site, Co(1) is bonded to two equivalent O(3) and two equivalent O(5) atoms to form CoO4 tetrahedra that share corners with two equivalent Si(1)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. In the second Co site, Co(2) is bonded to two equivalent O(4) and two equivalent O(6) atoms to form distorted CoO4 trigonal pyramids that share corners with two equivalent Si(1)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share  a cornercorner with one Co(1)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Co(2)O4 trigonal pyramid. In the second Si site, Si(2) is bonded to one O(5), one O(6), one O(7), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Co(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Co(2)O4 trigonal pyramid. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to two equivalent K(1), one Ho(1), and one Si(1) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to two equivalent Ho(1) and two equivalent Si(1) atoms. In the third O site, O(3) is bonded in a 4-coordinate geometry to one K(1), one Ho(1), one Co(1), and one Si(1) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one K(1), one Ho(1), one Co(2), and one Si(1) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to one K(1), one Ho(1), one Co(1), and one Si(2) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one K(1), one Ho(1), one Co(2), and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted single-bond geometry to one K(1), two equivalent Ho(1), and one Si(2) atom. In the eighth O site, O(8) is bonded in a 2-coordinate geometry to two equivalent K(1) and two equivalent Si(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_KHoCoSi2O7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.505
_cell_length_b   6.505
_cell_length_c   8.415
_cell_angle_alpha   75.315
_cell_angle_beta   75.315
_cell_angle_gamma   100.767
_symmetry_Int_Tables_number   1
_cell_volume   321.004
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.206  0.366  0.217  1.0
  K  K1  1  0.634  0.794  0.783  1.0
  Ho  Ho2  1  0.712  0.732  0.280  1.0
  Ho  Ho3  1  0.268  0.288  0.720  1.0
  Co  Co4  1  0.717  0.283  0.000  1.0
  Co  Co5  1  0.195  0.805  0.500  1.0
  Si  Si6  1  0.296  0.932  0.117  1.0
  Si  Si7  1  0.648  0.133  0.390  1.0
  Si  Si8  1  0.867  0.352  0.610  1.0
  Si  Si9  1  0.068  0.704  0.883  1.0
  O  O10  1  0.471  0.790  0.149  1.0
  O  O11  1  0.153  0.847  0.000  1.0
  O  O12  1  0.812  0.586  0.009  1.0
  O  O13  1  0.097  0.892  0.296  1.0
  O  O14  1  0.414  0.188  0.991  1.0
  O  O15  1  0.792  0.127  0.201  1.0
  O  O16  1  0.515  0.867  0.475  1.0
  O  O17  1  0.502  0.310  0.398  1.0
  O  O18  1  0.133  0.485  0.525  1.0
  O  O19  1  0.690  0.498  0.602  1.0
  O  O20  1  0.823  0.177  0.500  1.0
  O  O21  1  0.873  0.208  0.799  1.0
  O  O22  1  0.108  0.903  0.704  1.0
  O  O23  1  0.210  0.529  0.851  1.0
[/CIF]
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The material structure described by KHoCoSi2O7 crystallizes in the monoclinic C2 space group. K(1) is bonded in a 8-coordinate geometry to one O(3), one O(4), one O(5), one O(6), one O(7), one O(8), and two equivalent O(1) atoms. Ho(1) is bonded in a 8-coordinate geometry to one O(1), one O(2), one O(3), one O(4), one O(5), one O(6), and two equivalent O(7) atoms. There are two inequivalent Co sites. In the first Co site, Co(1) is bonded to two equivalent O(3) and two equivalent O(5) atoms to form CoO4 tetrahedra that share corners with two equivalent Si(1)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. In the second Co site, Co(2) is bonded to two equivalent O(4) and two equivalent O(6) atoms to form distorted CoO4 trigonal pyramids that share corners with two equivalent Si(1)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share  a cornercorner with one Co(1)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Co(2)O4 trigonal pyramid. In the second Si site, Si(2) is bonded to one O(5), one O(6), one O(7), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Co(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Co(2)O4 trigonal pyramid. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to two equivalent K(1), one Ho(1), and one Si(1) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to two equivalent Ho(1) and two equivalent Si(1) atoms. In the third O site, O(3) is bonded in a 4-coordinate geometry to one K(1), one Ho(1), one Co(1), and one Si(1) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one K(1), one Ho(1), one Co(2), and one Si(1) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to one K(1), one Ho(1), one Co(1), and one Si(2) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one K(1), one Ho(1), one Co(2), and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted single-bond geometry to one K(1), two equivalent Ho(1), and one Si(2) atom. In the eighth O site, O(8) is bonded in a 2-coordinate geometry to two equivalent K(1) and two equivalent Si(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_KHoCoSi2O7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.505
_cell_length_b   6.505
_cell_length_c   8.415
_cell_angle_alpha   75.315
_cell_angle_beta   75.315
_cell_angle_gamma   100.767
_symmetry_Int_Tables_number   1
_cell_volume   321.004
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.206  0.366  0.217  1.0
  K  K1  1  0.634  0.794  0.783  1.0
  Ho  Ho2  1  0.712  0.732  0.280  1.0
  Ho  Ho3  1  0.268  0.288  0.720  1.0
  Co  Co4  1  0.717  0.283  0.000  1.0
  Co  Co5  1  0.195  0.805  0.500  1.0
  Si  Si6  1  0.296  0.932  0.117  1.0
  Si  Si7  1  0.648  0.133  0.390  1.0
  Si  Si8  1  0.867  0.352  0.610  1.0
  Si  Si9  1  0.068  0.704  0.883  1.0
  O  O10  1  0.471  0.790  0.149  1.0
  O  O11  1  0.153  0.847  0.000  1.0
  O  O12  1  0.812  0.586  0.009  1.0
  O  O13  1  0.097  0.892  0.296  1.0
  O  O14  1  0.414  0.188  0.991  1.0
  O  O15  1  0.792  0.127  0.201  1.0
  O  O16  1  0.515  0.867  0.475  1.0
  O  O17  1  0.502  0.310  0.398  1.0
  O  O18  1  0.133  0.485  0.525  1.0
  O  O19  1  0.690  0.498  0.602  1.0
  O  O20  1  0.823  0.177  0.500  1.0
  O  O21  1  0.873  0.208  0.799  1.0
  O  O22  1  0.108  0.903  0.704  1.0
  O  O23  1  0.210  0.529  0.851  1.0
[/CIF]
.