The structure described by Li(SiO2)6 crystallizes in the triclinic P1 space group. Li(1) is bonded to one O(12), one O(4), one O(5), and one O(7) atom to form LiO4 tetrahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra,  a cornercorner with one Si(4)O4 tetrahedra,  a cornercorner with one Si(5)O4 tetrahedra, corners with two equivalent Si(6)O4 tetrahedra, and  an edgeedge with one Si(3)O4 tetrahedra. There are six inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(3), one O(5), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(5)O4 tetrahedra,  a cornercorner with one Si(6)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. In the second Si site, Si(2) is bonded to one O(10), one O(4), one O(6), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(5)O4 tetrahedra,  a cornercorner with one Si(6)O4 tetrahedra, and corners with two equivalent Si(1)O4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(12), one O(7), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Si(5)O4 tetrahedra,  a cornercorner with one Si(6)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and  an edgeedge with one Li(1)O4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(11), one O(2), one O(7), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(5)O4 tetrahedra,  a cornercorner with one Si(6)O4 tetrahedra, and corners with two equivalent Si(3)O4 tetrahedra. In the fifth Si site, Si(5) is bonded to one O(1), one O(2), one O(5), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. In the sixth Si site, Si(6) is bonded to one O(11), one O(12), one O(3), and one O(4) atom to form SiO4 tetrahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra,  a cornercorner with one Si(4)O4 tetrahedra, and corners with two equivalent Li(1)O4 tetrahedra. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(5) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(5) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(6) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Li(1), one Si(2), and one Si(6) atom. In the fifth O site, O(5) is bonded in a distorted trigonal non-coplanar geometry to one Li(1), one Si(1), and one Si(5) atom. In the sixth O site, O(6) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(5) atom. In the seventh O site, O(7) is bonded in a distorted T-shaped geometry to one Li(1), one Si(3), and one Si(4) atom. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(4) atom. In the ninth O site, O(9) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the tenth O site, O(10) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the eleventh O site, O(11) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(6) atom. In the twelfth O site, O(12) is bonded in a distorted trigonal planar geometry to one Li(1), one Si(3), and one Si(6) atom. is represented by the CIF file [CIF]
data_Li(SiO2)6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.193
_cell_length_b   7.536
_cell_length_c   7.588
_cell_angle_alpha   73.228
_cell_angle_beta   69.187
_cell_angle_gamma   70.703
_symmetry_Int_Tables_number   1
_cell_volume   257.016
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.316  0.939  0.452  1.0
  Si  Si1  1  0.365  0.348  0.320  1.0
  Si  Si2  1  0.036  0.195  0.143  1.0
  Si  Si3  1  0.614  0.659  0.685  1.0
  Si  Si4  1  0.937  0.818  0.859  1.0
  Si  Si5  1  0.974  0.234  0.734  1.0
  Si  Si6  1  0.003  0.771  0.272  1.0
  O  O7  1  0.724  0.428  0.697  1.0
  O  O8  1  0.847  0.049  0.776  1.0
  O  O9  1  0.244  0.577  0.326  1.0
  O  O10  1  0.122  0.961  0.248  1.0
  O  O11  1  0.245  0.214  0.534  1.0
  O  O12  1  0.085  0.226  0.913  1.0
  O  O13  1  0.265  0.738  0.722  1.0
  O  O14  1  0.717  0.722  0.832  1.0
  O  O15  1  0.711  0.294  0.261  1.0
  O  O16  1  0.262  0.288  0.168  1.0
  O  O17  1  0.921  0.770  0.085  1.0
  O  O18  1  0.711  0.777  0.458  1.0
[/CIF]
.
The structure described by Li(SiO2)6 crystallizes in the triclinic P1 space group. Li(1) is bonded to one O(12), one O(4), one O(5), and one O(7) atom to form LiO4 tetrahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra,  a cornercorner with one Si(4)O4 tetrahedra,  a cornercorner with one Si(5)O4 tetrahedra, corners with two equivalent Si(6)O4 tetrahedra, and  an edgeedge with one Si(3)O4 tetrahedra. There are six inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(3), one O(5), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(5)O4 tetrahedra,  a cornercorner with one Si(6)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. In the second Si site, Si(2) is bonded to one O(10), one O(4), one O(6), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(5)O4 tetrahedra,  a cornercorner with one Si(6)O4 tetrahedra, and corners with two equivalent Si(1)O4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(12), one O(7), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Si(5)O4 tetrahedra,  a cornercorner with one Si(6)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and  an edgeedge with one Li(1)O4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(11), one O(2), one O(7), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(5)O4 tetrahedra,  a cornercorner with one Si(6)O4 tetrahedra, and corners with two equivalent Si(3)O4 tetrahedra. In the fifth Si site, Si(5) is bonded to one O(1), one O(2), one O(5), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Li(1)O4 tetrahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. In the sixth Si site, Si(6) is bonded to one O(11), one O(12), one O(3), and one O(4) atom to form SiO4 tetrahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra,  a cornercorner with one Si(4)O4 tetrahedra, and corners with two equivalent Li(1)O4 tetrahedra. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(5) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(5) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(6) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Li(1), one Si(2), and one Si(6) atom. In the fifth O site, O(5) is bonded in a distorted trigonal non-coplanar geometry to one Li(1), one Si(1), and one Si(5) atom. In the sixth O site, O(6) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(5) atom. In the seventh O site, O(7) is bonded in a distorted T-shaped geometry to one Li(1), one Si(3), and one Si(4) atom. In the eighth O site, O(8) is bonded in a bent 150 degrees geometry to one Si(3) and one Si(4) atom. In the ninth O site, O(9) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the tenth O site, O(10) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the eleventh O site, O(11) is bonded in a bent 150 degrees geometry to one Si(4) and one Si(6) atom. In the twelfth O site, O(12) is bonded in a distorted trigonal planar geometry to one Li(1), one Si(3), and one Si(6) atom. is represented by the CIF file [CIF]
data_Li(SiO2)6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.193
_cell_length_b   7.536
_cell_length_c   7.588
_cell_angle_alpha   73.228
_cell_angle_beta   69.187
_cell_angle_gamma   70.703
_symmetry_Int_Tables_number   1
_cell_volume   257.016
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.316  0.939  0.452  1.0
  Si  Si1  1  0.365  0.348  0.320  1.0
  Si  Si2  1  0.036  0.195  0.143  1.0
  Si  Si3  1  0.614  0.659  0.685  1.0
  Si  Si4  1  0.937  0.818  0.859  1.0
  Si  Si5  1  0.974  0.234  0.734  1.0
  Si  Si6  1  0.003  0.771  0.272  1.0
  O  O7  1  0.724  0.428  0.697  1.0
  O  O8  1  0.847  0.049  0.776  1.0
  O  O9  1  0.244  0.577  0.326  1.0
  O  O10  1  0.122  0.961  0.248  1.0
  O  O11  1  0.245  0.214  0.534  1.0
  O  O12  1  0.085  0.226  0.913  1.0
  O  O13  1  0.265  0.738  0.722  1.0
  O  O14  1  0.717  0.722  0.832  1.0
  O  O15  1  0.711  0.294  0.261  1.0
  O  O16  1  0.262  0.288  0.168  1.0
  O  O17  1  0.921  0.770  0.085  1.0
  O  O18  1  0.711  0.777  0.458  1.0
[/CIF]
.