The crystal structure described by V9Ga2Sn crystallizes in the orthorhombic Pmmm space group. There are seven inequivalent V sites. In the first V site, V(1) is bonded in a 6-coordinate geometry to one V(2), one V(3), two equivalent Ga(1), and two equivalent Sn(1) atoms. In the second V site, V(2) is bonded in a 6-coordinate geometry to one V(1), one V(2), two equivalent Ga(2), and two equivalent Sn(1) atoms. In the third V site, V(3) is bonded in a 6-coordinate geometry to one V(1), one V(3), four equivalent V(4), two equivalent Ga(1), and two equivalent Ga(3) atoms. In the fourth V site, V(4) is bonded in a 14-coordinate geometry to two equivalent V(4), four equivalent V(3), four equivalent V(6), two equivalent Ga(1), and two equivalent Ga(3) atoms. In the fifth V site, V(5) is bonded in a 6-coordinate geometry to two equivalent V(5), one Ga(1), one Ga(2), and two equivalent Sn(1) atoms. In the sixth V site, V(6) is bonded in a 6-coordinate geometry to two equivalent V(4), two equivalent V(6), one Ga(3), two equivalent Ga(1), and one Sn(1) atom. In the seventh V site, V(7) is bonded in a 6-coordinate geometry to two equivalent V(7), two equivalent Ga(2), and two equivalent Sn(1) atoms. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent V(1), two equivalent V(3), two equivalent V(4), two equivalent V(5), and four equivalent V(6) atoms to form GaV12 cuboctahedra that share  an edgeedge with one Ga(2)V12 cuboctahedra, edges with five equivalent Ga(1)V12 cuboctahedra, faces with four equivalent Ga(3)V12 cuboctahedra, and faces with four equivalent Sn(1)V12 cuboctahedra. In the second Ga site, Ga(2) is bonded to four equivalent V(2), four equivalent V(5), and four equivalent V(7) atoms to form GaV12 cuboctahedra that share edges with two equivalent Ga(1)V12 cuboctahedra, edges with four equivalent Ga(2)V12 cuboctahedra, and faces with eight equivalent Sn(1)V12 cuboctahedra. In the third Ga site, Ga(3) is bonded to four equivalent V(3), four equivalent V(4), and four equivalent V(6) atoms to form GaV12 cuboctahedra that share edges with two equivalent Sn(1)V12 cuboctahedra, edges with four equivalent Ga(3)V12 cuboctahedra, and faces with eight equivalent Ga(1)V12 cuboctahedra. Sn(1) is bonded to two equivalent V(1), two equivalent V(2), two equivalent V(6), two equivalent V(7), and four equivalent V(5) atoms to form SnV12 cuboctahedra that share  an edgeedge with one Ga(3)V12 cuboctahedra, edges with five equivalent Sn(1)V12 cuboctahedra, faces with four equivalent Ga(1)V12 cuboctahedra, and faces with four equivalent Ga(2)V12 cuboctahedra. is represented by the CIF card [CIF]
data_V9Ga2Sn
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.855
_cell_length_b   4.876
_cell_length_c   14.427
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   341.593
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.500  0.000  0.242  1.0
  V  V1  1  0.500  0.000  0.580  1.0
  V  V2  1  0.500  0.000  0.919  1.0
  V  V3  1  0.762  0.500  0.000  1.0
  V  V4  1  0.739  0.500  0.333  1.0
  V  V5  1  0.739  0.500  0.667  1.0
  V  V6  1  0.000  0.741  0.160  1.0
  V  V7  1  0.000  0.739  0.500  1.0
  V  V8  1  0.000  0.741  0.840  1.0
  V  V9  1  0.500  0.000  0.081  1.0
  V  V10  1  0.500  0.000  0.420  1.0
  V  V11  1  0.500  0.000  0.758  1.0
  V  V12  1  0.238  0.500  0.000  1.0
  V  V13  1  0.261  0.500  0.333  1.0
  V  V14  1  0.261  0.500  0.667  1.0
  V  V15  1  0.000  0.259  0.160  1.0
  V  V16  1  0.000  0.261  0.500  1.0
  V  V17  1  0.000  0.259  0.840  1.0
  Ga  Ga18  1  0.500  0.500  0.166  1.0
  Ga  Ga19  1  0.500  0.500  0.500  1.0
  Ga  Ga20  1  0.500  0.500  0.834  1.0
  Ga  Ga21  1  0.000  0.000  0.000  1.0
  Sn  Sn22  1  0.000  0.000  0.330  1.0
  Sn  Sn23  1  0.000  0.000  0.670  1.0
[/CIF]
.
The crystal structure described by V9Ga2Sn crystallizes in the orthorhombic Pmmm space group. There are seven inequivalent V sites. In the first V site, V(1) is bonded in a 6-coordinate geometry to one V(2), one V(3), two equivalent Ga(1), and two equivalent Sn(1) atoms. In the second V site, V(2) is bonded in a 6-coordinate geometry to one V(1), one V(2), two equivalent Ga(2), and two equivalent Sn(1) atoms. In the third V site, V(3) is bonded in a 6-coordinate geometry to one V(1), one V(3), four equivalent V(4), two equivalent Ga(1), and two equivalent Ga(3) atoms. In the fourth V site, V(4) is bonded in a 14-coordinate geometry to two equivalent V(4), four equivalent V(3), four equivalent V(6), two equivalent Ga(1), and two equivalent Ga(3) atoms. In the fifth V site, V(5) is bonded in a 6-coordinate geometry to two equivalent V(5), one Ga(1), one Ga(2), and two equivalent Sn(1) atoms. In the sixth V site, V(6) is bonded in a 6-coordinate geometry to two equivalent V(4), two equivalent V(6), one Ga(3), two equivalent Ga(1), and one Sn(1) atom. In the seventh V site, V(7) is bonded in a 6-coordinate geometry to two equivalent V(7), two equivalent Ga(2), and two equivalent Sn(1) atoms. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent V(1), two equivalent V(3), two equivalent V(4), two equivalent V(5), and four equivalent V(6) atoms to form GaV12 cuboctahedra that share  an edgeedge with one Ga(2)V12 cuboctahedra, edges with five equivalent Ga(1)V12 cuboctahedra, faces with four equivalent Ga(3)V12 cuboctahedra, and faces with four equivalent Sn(1)V12 cuboctahedra. In the second Ga site, Ga(2) is bonded to four equivalent V(2), four equivalent V(5), and four equivalent V(7) atoms to form GaV12 cuboctahedra that share edges with two equivalent Ga(1)V12 cuboctahedra, edges with four equivalent Ga(2)V12 cuboctahedra, and faces with eight equivalent Sn(1)V12 cuboctahedra. In the third Ga site, Ga(3) is bonded to four equivalent V(3), four equivalent V(4), and four equivalent V(6) atoms to form GaV12 cuboctahedra that share edges with two equivalent Sn(1)V12 cuboctahedra, edges with four equivalent Ga(3)V12 cuboctahedra, and faces with eight equivalent Ga(1)V12 cuboctahedra. Sn(1) is bonded to two equivalent V(1), two equivalent V(2), two equivalent V(6), two equivalent V(7), and four equivalent V(5) atoms to form SnV12 cuboctahedra that share  an edgeedge with one Ga(3)V12 cuboctahedra, edges with five equivalent Sn(1)V12 cuboctahedra, faces with four equivalent Ga(1)V12 cuboctahedra, and faces with four equivalent Ga(2)V12 cuboctahedra. is represented by the CIF card [CIF]
data_V9Ga2Sn
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.855
_cell_length_b   4.876
_cell_length_c   14.427
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   341.593
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.500  0.000  0.242  1.0
  V  V1  1  0.500  0.000  0.580  1.0
  V  V2  1  0.500  0.000  0.919  1.0
  V  V3  1  0.762  0.500  0.000  1.0
  V  V4  1  0.739  0.500  0.333  1.0
  V  V5  1  0.739  0.500  0.667  1.0
  V  V6  1  0.000  0.741  0.160  1.0
  V  V7  1  0.000  0.739  0.500  1.0
  V  V8  1  0.000  0.741  0.840  1.0
  V  V9  1  0.500  0.000  0.081  1.0
  V  V10  1  0.500  0.000  0.420  1.0
  V  V11  1  0.500  0.000  0.758  1.0
  V  V12  1  0.238  0.500  0.000  1.0
  V  V13  1  0.261  0.500  0.333  1.0
  V  V14  1  0.261  0.500  0.667  1.0
  V  V15  1  0.000  0.259  0.160  1.0
  V  V16  1  0.000  0.261  0.500  1.0
  V  V17  1  0.000  0.259  0.840  1.0
  Ga  Ga18  1  0.500  0.500  0.166  1.0
  Ga  Ga19  1  0.500  0.500  0.500  1.0
  Ga  Ga20  1  0.500  0.500  0.834  1.0
  Ga  Ga21  1  0.000  0.000  0.000  1.0
  Sn  Sn22  1  0.000  0.000  0.330  1.0
  Sn  Sn23  1  0.000  0.000  0.670  1.0
[/CIF]
.