The material structure described by Ho11(In3Si2)2 crystallizes in the tetragonal I4/mmm space group. There are four inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 7-coordinate geometry to four equivalent In(1), one Si(1), one Si(2), and one Si(3) atom. In the second Ho site, Ho(2) is bonded in a 7-coordinate geometry to two equivalent In(1), two equivalent In(2), one Si(3), and two equivalent Si(1) atoms. In the third Ho site, Ho(3) is bonded in a 7-coordinate geometry to one In(2), two equivalent In(1), two equivalent Si(1), and two equivalent Si(2) atoms. In the fourth Ho site, Ho(4) is bonded in a 9-coordinate geometry to four equivalent In(1), four equivalent In(2), and one Si(2) atom. There are two inequivalent In sites. In the first In site, In(1) is bonded in a 10-coordinate geometry to one Ho(3), one Ho(4), two equivalent Ho(2), four equivalent Ho(1), one In(1), and one In(2) atom. In the second In site, In(2) is bonded in a 11-coordinate geometry to one Ho(3), two equivalent Ho(4), four equivalent Ho(2), two equivalent In(1), and two equivalent In(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 8-coordinate geometry to two equivalent Ho(1), two equivalent Ho(3), and four equivalent Ho(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Ho(4), four equivalent Ho(1), and four equivalent Ho(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to four equivalent Ho(1) and four equivalent Ho(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ho11(In3Si2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.417
_cell_length_b   11.417
_cell_length_c   11.417
_cell_angle_alpha   119.882
_cell_angle_beta   119.882
_cell_angle_gamma   90.205
_symmetry_Int_Tables_number   1
_cell_volume   1054.214
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.684  0.935  0.251  1.0
  Ho  Ho1  1  0.684  0.433  0.749  1.0
  Ho  Ho2  1  0.935  0.684  0.251  1.0
  Ho  Ho3  1  0.433  0.684  0.749  1.0
  Ho  Ho4  1  0.316  0.065  0.749  1.0
  Ho  Ho5  1  0.316  0.567  0.251  1.0
  Ho  Ho6  1  0.065  0.316  0.749  1.0
  Ho  Ho7  1  0.567  0.316  0.251  1.0
  Ho  Ho8  1  0.899  0.246  0.347  1.0
  Ho  Ho9  1  0.899  0.552  0.653  1.0
  Ho  Ho10  1  0.246  0.899  0.347  1.0
  Ho  Ho11  1  0.552  0.899  0.653  1.0
  Ho  Ho12  1  0.101  0.754  0.653  1.0
  Ho  Ho13  1  0.101  0.448  0.347  1.0
  Ho  Ho14  1  0.754  0.101  0.653  1.0
  Ho  Ho15  1  0.448  0.101  0.347  1.0
  Ho  Ho16  1  0.332  0.332  0.664  1.0
  Ho  Ho17  1  0.668  0.668  0.336  1.0
  Ho  Ho18  1  0.332  0.668  0.000  1.0
  Ho  Ho19  1  0.668  0.332  0.000  1.0
  Ho  Ho20  1  0.828  0.828  0.000  1.0
  Ho  Ho21  1  0.172  0.172  0.000  1.0
  In  In22  1  0.034  0.034  0.411  1.0
  In  In23  1  0.623  0.623  0.589  1.0
  In  In24  1  0.034  0.623  0.000  1.0
  In  In25  1  0.623  0.034  0.000  1.0
  In  In26  1  0.966  0.966  0.589  1.0
  In  In27  1  0.377  0.377  0.411  1.0
  In  In28  1  0.966  0.377  0.000  1.0
  In  In29  1  0.377  0.966  0.000  1.0
  In  In30  1  0.129  0.129  0.257  1.0
  In  In31  1  0.871  0.871  0.743  1.0
  In  In32  1  0.129  0.871  0.000  1.0
  In  In33  1  0.871  0.129  0.000  1.0
  Si  Si34  1  0.152  0.500  0.652  1.0
  Si  Si35  1  0.848  0.500  0.348  1.0
  Si  Si36  1  0.500  0.848  0.348  1.0
  Si  Si37  1  0.500  0.152  0.652  1.0
  Si  Si38  1  0.617  0.617  0.000  1.0
  Si  Si39  1  0.383  0.383  0.000  1.0
  Si  Si40  1  0.750  0.250  0.500  1.0
  Si  Si41  1  0.250  0.750  0.500  1.0
[/CIF]
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The material structure described by Ho11(In3Si2)2 crystallizes in the tetragonal I4/mmm space group. There are four inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 7-coordinate geometry to four equivalent In(1), one Si(1), one Si(2), and one Si(3) atom. In the second Ho site, Ho(2) is bonded in a 7-coordinate geometry to two equivalent In(1), two equivalent In(2), one Si(3), and two equivalent Si(1) atoms. In the third Ho site, Ho(3) is bonded in a 7-coordinate geometry to one In(2), two equivalent In(1), two equivalent Si(1), and two equivalent Si(2) atoms. In the fourth Ho site, Ho(4) is bonded in a 9-coordinate geometry to four equivalent In(1), four equivalent In(2), and one Si(2) atom. There are two inequivalent In sites. In the first In site, In(1) is bonded in a 10-coordinate geometry to one Ho(3), one Ho(4), two equivalent Ho(2), four equivalent Ho(1), one In(1), and one In(2) atom. In the second In site, In(2) is bonded in a 11-coordinate geometry to one Ho(3), two equivalent Ho(4), four equivalent Ho(2), two equivalent In(1), and two equivalent In(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 8-coordinate geometry to two equivalent Ho(1), two equivalent Ho(3), and four equivalent Ho(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Ho(4), four equivalent Ho(1), and four equivalent Ho(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to four equivalent Ho(1) and four equivalent Ho(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ho11(In3Si2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.417
_cell_length_b   11.417
_cell_length_c   11.417
_cell_angle_alpha   119.882
_cell_angle_beta   119.882
_cell_angle_gamma   90.205
_symmetry_Int_Tables_number   1
_cell_volume   1054.214
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.684  0.935  0.251  1.0
  Ho  Ho1  1  0.684  0.433  0.749  1.0
  Ho  Ho2  1  0.935  0.684  0.251  1.0
  Ho  Ho3  1  0.433  0.684  0.749  1.0
  Ho  Ho4  1  0.316  0.065  0.749  1.0
  Ho  Ho5  1  0.316  0.567  0.251  1.0
  Ho  Ho6  1  0.065  0.316  0.749  1.0
  Ho  Ho7  1  0.567  0.316  0.251  1.0
  Ho  Ho8  1  0.899  0.246  0.347  1.0
  Ho  Ho9  1  0.899  0.552  0.653  1.0
  Ho  Ho10  1  0.246  0.899  0.347  1.0
  Ho  Ho11  1  0.552  0.899  0.653  1.0
  Ho  Ho12  1  0.101  0.754  0.653  1.0
  Ho  Ho13  1  0.101  0.448  0.347  1.0
  Ho  Ho14  1  0.754  0.101  0.653  1.0
  Ho  Ho15  1  0.448  0.101  0.347  1.0
  Ho  Ho16  1  0.332  0.332  0.664  1.0
  Ho  Ho17  1  0.668  0.668  0.336  1.0
  Ho  Ho18  1  0.332  0.668  0.000  1.0
  Ho  Ho19  1  0.668  0.332  0.000  1.0
  Ho  Ho20  1  0.828  0.828  0.000  1.0
  Ho  Ho21  1  0.172  0.172  0.000  1.0
  In  In22  1  0.034  0.034  0.411  1.0
  In  In23  1  0.623  0.623  0.589  1.0
  In  In24  1  0.034  0.623  0.000  1.0
  In  In25  1  0.623  0.034  0.000  1.0
  In  In26  1  0.966  0.966  0.589  1.0
  In  In27  1  0.377  0.377  0.411  1.0
  In  In28  1  0.966  0.377  0.000  1.0
  In  In29  1  0.377  0.966  0.000  1.0
  In  In30  1  0.129  0.129  0.257  1.0
  In  In31  1  0.871  0.871  0.743  1.0
  In  In32  1  0.129  0.871  0.000  1.0
  In  In33  1  0.871  0.129  0.000  1.0
  Si  Si34  1  0.152  0.500  0.652  1.0
  Si  Si35  1  0.848  0.500  0.348  1.0
  Si  Si36  1  0.500  0.848  0.348  1.0
  Si  Si37  1  0.500  0.152  0.652  1.0
  Si  Si38  1  0.617  0.617  0.000  1.0
  Si  Si39  1  0.383  0.383  0.000  1.0
  Si  Si40  1  0.750  0.250  0.500  1.0
  Si  Si41  1  0.250  0.750  0.500  1.0
[/CIF]
.