The material described by Dy2(IrSi)3 crystallizes in the tetragonal P4/mmm space group. Dy(1) is bonded to four equivalent Dy(1), one Ir(1), and one Si(1) atom to form distorted DyDy4SiIr octahedra that share corners with four equivalent Dy(1)Dy4SiIr octahedra, edges with four equivalent Dy(1)Dy4SiIr octahedra, and edges with four equivalent Si(1)DySi4Ir octahedra. The corner-sharing octahedra are not tilted. There are two inequivalent Ir sites. In the first Ir site, Ir(1) is bonded in a distorted linear geometry to one Dy(1) and one Si(2) atom. In the second Ir site, Ir(2) is bonded in a distorted linear geometry to two equivalent Si(1) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one Dy(1), one Ir(2), and four equivalent Si(1) atoms to form distorted SiDySi4Ir octahedra that share corners with five equivalent Si(1)DySi4Ir octahedra, edges with four equivalent Dy(1)Dy4SiIr octahedra, and edges with four equivalent Si(1)DySi4Ir octahedra. The corner-sharing octahedra are not tilted. In the second Si site, Si(2) is bonded in a linear geometry to two equivalent Ir(1) atoms. is represented by the CIF file [CIF]
data_Dy2(SiIr)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   2.786
_cell_length_b   2.786
_cell_length_c   20.361
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   158.029
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Dy  Dy0  1  0.500  0.500  0.759  1.0
  Dy  Dy1  1  0.500  0.500  0.241  1.0
  Si  Si2  1  0.500  0.500  0.387  1.0
  Si  Si3  1  0.500  0.500  0.613  1.0
  Si  Si4  1  0.500  0.500  0.000  1.0
  Ir  Ir5  1  0.500  0.500  0.111  1.0
  Ir  Ir6  1  0.500  0.500  0.889  1.0
  Ir  Ir7  1  0.500  0.500  0.500  1.0
[/CIF]
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The material described by Dy2(IrSi)3 crystallizes in the tetragonal P4/mmm space group. Dy(1) is bonded to four equivalent Dy(1), one Ir(1), and one Si(1) atom to form distorted DyDy4SiIr octahedra that share corners with four equivalent Dy(1)Dy4SiIr octahedra, edges with four equivalent Dy(1)Dy4SiIr octahedra, and edges with four equivalent Si(1)DySi4Ir octahedra. The corner-sharing octahedra are not tilted. There are two inequivalent Ir sites. In the first Ir site, Ir(1) is bonded in a distorted linear geometry to one Dy(1) and one Si(2) atom. In the second Ir site, Ir(2) is bonded in a distorted linear geometry to two equivalent Si(1) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one Dy(1), one Ir(2), and four equivalent Si(1) atoms to form distorted SiDySi4Ir octahedra that share corners with five equivalent Si(1)DySi4Ir octahedra, edges with four equivalent Dy(1)Dy4SiIr octahedra, and edges with four equivalent Si(1)DySi4Ir octahedra. The corner-sharing octahedra are not tilted. In the second Si site, Si(2) is bonded in a linear geometry to two equivalent Ir(1) atoms. is represented by the CIF file [CIF]
data_Dy2(SiIr)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   2.786
_cell_length_b   2.786
_cell_length_c   20.361
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   158.029
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Dy  Dy0  1  0.500  0.500  0.759  1.0
  Dy  Dy1  1  0.500  0.500  0.241  1.0
  Si  Si2  1  0.500  0.500  0.387  1.0
  Si  Si3  1  0.500  0.500  0.613  1.0
  Si  Si4  1  0.500  0.500  0.000  1.0
  Ir  Ir5  1  0.500  0.500  0.111  1.0
  Ir  Ir6  1  0.500  0.500  0.889  1.0
  Ir  Ir7  1  0.500  0.500  0.500  1.0
[/CIF]
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