The structure described by NaLi3Ga4(SiO3)8 is Esseneite-derived structured and crystallizes in the monoclinic C2 space group. Na(1) is bonded in a 6-coordinate geometry to two equivalent O(2), two equivalent O(8), and two equivalent O(9) atoms. There are two inequivalent Li sites. In the first Li site, Li(1) is bonded in a 6-coordinate geometry to two equivalent O(1), two equivalent O(10), and two equivalent O(7) atoms. In the second Li site, Li(2) is bonded in a 6-coordinate geometry to one O(11), one O(12), one O(3), one O(4), one O(5), and one O(6) atom. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(2), two equivalent O(4), and two equivalent O(5) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. In the second Ga site, Ga(2) is bonded to two equivalent O(1), two equivalent O(3), and two equivalent O(6) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. In the third Ga site, Ga(3) is bonded to one O(1), one O(2), one O(3), one O(4), one O(7), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra,  an edgeedge with one Ga(1)O6 octahedra, and  an edgeedge with one Ga(2)O6 octahedra. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(11), one O(5), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 37-60°. In the second Si site, Si(2) is bonded to one O(10), one O(12), one O(2), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 38-58°. In the third Si site, Si(3) is bonded to one O(10), one O(11), one O(3), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 37-59°. In the fourth Si site, Si(4) is bonded to one O(12), one O(4), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 35-60°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded to one Li(1), one Ga(2), one Ga(3), and one Si(1) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(1)LiGa2Si tetrahedra, and  an edgeedge with one O(3)LiGa2Si tetrahedra. In the second O site, O(2) is bonded to one Na(1), one Ga(1), one Ga(3), and one Si(2) atom to form distorted ONaGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  an edgeedge with one O(4)LiGa2Si tetrahedra, and  an edgeedge with one O(2)NaGa2Si tetrahedra. In the third O site, O(3) is bonded to one Li(2), one Ga(2), one Ga(3), and one Si(3) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(1)LiGa2Si tetrahedra, and  an edgeedge with one O(4)LiGa2Si tetrahedra. In the fourth O site, O(4) is bonded to one Li(2), one Ga(1), one Ga(3), and one Si(4) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(3)LiGa2Si tetrahedra, and  an edgeedge with one O(2)NaGa2Si tetrahedra. In the fifth O site, O(5) is bonded in a distorted T-shaped geometry to one Li(2), one Ga(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a distorted T-shaped geometry to one Li(2), one Ga(2), and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted T-shaped geometry to one Li(1), one Ga(3), and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted T-shaped geometry to one Na(1), one Ga(3), and one Si(4) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one Na(1), one Si(1), and one Si(4) atom. In the tenth O site, O(10) is bonded in a 3-coordinate geometry to one Li(1), one Si(2), and one Si(3) atom. In the eleventh O site, O(11) is bonded in a 2-coordinate geometry to one Li(2), one Si(1), and one Si(3) atom. In the twelfth O site, O(12) is bonded in a 3-coordinate geometry to one Li(2), one Si(2), and one Si(4) atom. is represented by the CIF card [CIF]
data_NaLi3Ga4(SiO3)8
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.310
_cell_length_b   7.310
_cell_length_c   9.709
_cell_angle_alpha   65.380
_cell_angle_beta   65.380
_cell_angle_gamma   73.063
_symmetry_Int_Tables_number   1
_cell_volume   424.368
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Na  Na0  1  0.418  0.582  0.500  1.0
  Li  Li1  1  0.896  0.104  0.000  1.0
  Li  Li2  1  0.103  0.396  0.250  1.0
  Li  Li3  1  0.604  0.897  0.750  1.0
  Ga  Ga4  1  0.024  0.976  0.500  1.0
  Ga  Ga5  1  0.525  0.475  0.000  1.0
  Ga  Ga6  1  0.474  0.027  0.249  1.0
  Ga  Ga7  1  0.973  0.526  0.751  1.0
  Si  Si8  1  0.715  0.282  0.708  1.0
  Si  Si9  1  0.214  0.784  0.205  1.0
  Si  Si10  1  0.718  0.285  0.292  1.0
  Si  Si11  1  0.216  0.786  0.795  1.0
  Si  Si12  1  0.786  0.719  0.044  1.0
  Si  Si13  1  0.284  0.215  0.544  1.0
  Si  Si14  1  0.785  0.716  0.456  1.0
  Si  Si15  1  0.281  0.214  0.956  1.0
  O  O16  1  0.762  0.343  0.835  1.0
  O  O17  1  0.260  0.852  0.329  1.0
  O  O18  1  0.657  0.238  0.165  1.0
  O  O19  1  0.148  0.740  0.671  1.0
  O  O20  1  0.735  0.657  0.918  1.0
  O  O21  1  0.236  0.156  0.416  1.0
  O  O22  1  0.844  0.764  0.584  1.0
  O  O23  1  0.343  0.265  0.082  1.0
  O  O24  1  0.846  0.078  0.672  1.0
  O  O25  1  0.348  0.579  0.172  1.0
  O  O26  1  0.922  0.154  0.328  1.0
  O  O27  1  0.421  0.652  0.828  1.0
  O  O28  1  0.651  0.922  0.079  1.0
  O  O29  1  0.141  0.414  0.582  1.0
  O  O30  1  0.586  0.859  0.418  1.0
  O  O31  1  0.078  0.349  0.921  1.0
  O  O32  1  0.736  0.479  0.541  1.0
  O  O33  1  0.231  0.979  0.037  1.0
  O  O34  1  0.521  0.264  0.459  1.0
  O  O35  1  0.021  0.769  0.963  1.0
  O  O36  1  0.766  0.522  0.211  1.0
  O  O37  1  0.270  0.020  0.710  1.0
  O  O38  1  0.980  0.730  0.290  1.0
  O  O39  1  0.478  0.234  0.789  1.0
[/CIF]
.
The structure described by NaLi3Ga4(SiO3)8 is Esseneite-derived structured and crystallizes in the monoclinic C2 space group. Na(1) is bonded in a 6-coordinate geometry to two equivalent O(2), two equivalent O(8), and two equivalent O(9) atoms. There are two inequivalent Li sites. In the first Li site, Li(1) is bonded in a 6-coordinate geometry to two equivalent O(1), two equivalent O(10), and two equivalent O(7) atoms. In the second Li site, Li(2) is bonded in a 6-coordinate geometry to one O(11), one O(12), one O(3), one O(4), one O(5), and one O(6) atom. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(2), two equivalent O(4), and two equivalent O(5) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. In the second Ga site, Ga(2) is bonded to two equivalent O(1), two equivalent O(3), and two equivalent O(6) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, and edges with two equivalent Ga(3)O6 octahedra. In the third Ga site, Ga(3) is bonded to one O(1), one O(2), one O(3), one O(4), one O(7), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, corners with two equivalent Si(4)O4 tetrahedra,  an edgeedge with one Ga(1)O6 octahedra, and  an edgeedge with one Ga(2)O6 octahedra. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(11), one O(5), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 37-60°. In the second Si site, Si(2) is bonded to one O(10), one O(12), one O(2), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(3)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 38-58°. In the third Si site, Si(3) is bonded to one O(10), one O(11), one O(3), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 37-59°. In the fourth Si site, Si(4) is bonded to one O(12), one O(4), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 35-60°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded to one Li(1), one Ga(2), one Ga(3), and one Si(1) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(1)LiGa2Si tetrahedra, and  an edgeedge with one O(3)LiGa2Si tetrahedra. In the second O site, O(2) is bonded to one Na(1), one Ga(1), one Ga(3), and one Si(2) atom to form distorted ONaGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  an edgeedge with one O(4)LiGa2Si tetrahedra, and  an edgeedge with one O(2)NaGa2Si tetrahedra. In the third O site, O(3) is bonded to one Li(2), one Ga(2), one Ga(3), and one Si(3) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(3)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(1)LiGa2Si tetrahedra, and  an edgeedge with one O(4)LiGa2Si tetrahedra. In the fourth O site, O(4) is bonded to one Li(2), one Ga(1), one Ga(3), and one Si(4) atom to form distorted OLiGa2Si tetrahedra that share  a cornercorner with one O(1)LiGa2Si tetrahedra,  a cornercorner with one O(4)LiGa2Si tetrahedra,  a cornercorner with one O(2)NaGa2Si tetrahedra,  an edgeedge with one O(3)LiGa2Si tetrahedra, and  an edgeedge with one O(2)NaGa2Si tetrahedra. In the fifth O site, O(5) is bonded in a distorted T-shaped geometry to one Li(2), one Ga(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a distorted T-shaped geometry to one Li(2), one Ga(2), and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted T-shaped geometry to one Li(1), one Ga(3), and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted T-shaped geometry to one Na(1), one Ga(3), and one Si(4) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one Na(1), one Si(1), and one Si(4) atom. In the tenth O site, O(10) is bonded in a 3-coordinate geometry to one Li(1), one Si(2), and one Si(3) atom. In the eleventh O site, O(11) is bonded in a 2-coordinate geometry to one Li(2), one Si(1), and one Si(3) atom. In the twelfth O site, O(12) is bonded in a 3-coordinate geometry to one Li(2), one Si(2), and one Si(4) atom. is represented by the CIF card [CIF]
data_NaLi3Ga4(SiO3)8
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.310
_cell_length_b   7.310
_cell_length_c   9.709
_cell_angle_alpha   65.380
_cell_angle_beta   65.380
_cell_angle_gamma   73.063
_symmetry_Int_Tables_number   1
_cell_volume   424.368
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Na  Na0  1  0.418  0.582  0.500  1.0
  Li  Li1  1  0.896  0.104  0.000  1.0
  Li  Li2  1  0.103  0.396  0.250  1.0
  Li  Li3  1  0.604  0.897  0.750  1.0
  Ga  Ga4  1  0.024  0.976  0.500  1.0
  Ga  Ga5  1  0.525  0.475  0.000  1.0
  Ga  Ga6  1  0.474  0.027  0.249  1.0
  Ga  Ga7  1  0.973  0.526  0.751  1.0
  Si  Si8  1  0.715  0.282  0.708  1.0
  Si  Si9  1  0.214  0.784  0.205  1.0
  Si  Si10  1  0.718  0.285  0.292  1.0
  Si  Si11  1  0.216  0.786  0.795  1.0
  Si  Si12  1  0.786  0.719  0.044  1.0
  Si  Si13  1  0.284  0.215  0.544  1.0
  Si  Si14  1  0.785  0.716  0.456  1.0
  Si  Si15  1  0.281  0.214  0.956  1.0
  O  O16  1  0.762  0.343  0.835  1.0
  O  O17  1  0.260  0.852  0.329  1.0
  O  O18  1  0.657  0.238  0.165  1.0
  O  O19  1  0.148  0.740  0.671  1.0
  O  O20  1  0.735  0.657  0.918  1.0
  O  O21  1  0.236  0.156  0.416  1.0
  O  O22  1  0.844  0.764  0.584  1.0
  O  O23  1  0.343  0.265  0.082  1.0
  O  O24  1  0.846  0.078  0.672  1.0
  O  O25  1  0.348  0.579  0.172  1.0
  O  O26  1  0.922  0.154  0.328  1.0
  O  O27  1  0.421  0.652  0.828  1.0
  O  O28  1  0.651  0.922  0.079  1.0
  O  O29  1  0.141  0.414  0.582  1.0
  O  O30  1  0.586  0.859  0.418  1.0
  O  O31  1  0.078  0.349  0.921  1.0
  O  O32  1  0.736  0.479  0.541  1.0
  O  O33  1  0.231  0.979  0.037  1.0
  O  O34  1  0.521  0.264  0.459  1.0
  O  O35  1  0.021  0.769  0.963  1.0
  O  O36  1  0.766  0.522  0.211  1.0
  O  O37  1  0.270  0.020  0.710  1.0
  O  O38  1  0.980  0.730  0.290  1.0
  O  O39  1  0.478  0.234  0.789  1.0
[/CIF]
.