The material structure described by Ga3Ge3N5 crystallizes in the triclinic P-1 space group. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one N(1), one N(5), and two equivalent N(3) atoms to form distorted edge-sharing GaN4 trigonal pyramids. In the second Ga site, Ga(2) is bonded in a distorted rectangular see-saw-like geometry to one N(1), one N(2), and two equivalent N(4) atoms. In the third Ga site, Ga(3) is bonded in a rectangular see-saw-like geometry to one N(1), one N(2), one N(4), and one N(5) atom. There are three inequivalent Ge sites. In the first Ge site, Ge(1) is bonded in an L-shaped geometry to two equivalent N(2) atoms. In the second Ge site, Ge(2) is bonded in a distorted T-shaped geometry to one N(3) and two equivalent N(5) atoms. In the third Ge site, Ge(3) is bonded in a distorted trigonal non-coplanar geometry to one N(1), one N(3), and one N(4) atom. There are five inequivalent N sites. In the first N site, N(1) is bonded to one Ga(1), one Ga(2), one Ga(3), and one Ge(3) atom to form a mixture of corner and edge-sharing NGa3Ge trigonal pyramids. In the second N site, N(2) is bonded to one Ga(2), one Ga(3), and two equivalent Ge(1) atoms to form distorted NGa2Ge2 tetrahedra that share  a cornercorner with one N(5)Ga2Ge2 tetrahedra,  an edgeedge with one N(2)Ga2Ge2 tetrahedra, and  an edgeedge with one N(1)Ga3Ge trigonal pyramid. In the third N site, N(3) is bonded to two equivalent Ga(1), one Ge(2), and one Ge(3) atom to form NGa2Ge2 trigonal pyramids that share corners with two equivalent N(5)Ga2Ge2 tetrahedra, corners with three equivalent N(1)Ga3Ge trigonal pyramids,  an edgeedge with one N(5)Ga2Ge2 tetrahedra, and  an edgeedge with one N(3)Ga2Ge2 trigonal pyramid. In the fourth N site, N(4) is bonded in a distorted rectangular see-saw-like geometry to one Ga(3), two equivalent Ga(2), and one Ge(3) atom. In the fifth N site, N(5) is bonded to one Ga(1), one Ga(3), and two equivalent Ge(2) atoms to form NGa2Ge2 tetrahedra that share  a cornercorner with one N(2)Ga2Ge2 tetrahedra, corners with two equivalent N(3)Ga2Ge2 trigonal pyramids, corners with two equivalent N(1)Ga3Ge trigonal pyramids,  an edgeedge with one N(5)Ga2Ge2 tetrahedra, and  an edgeedge with one N(3)Ga2Ge2 trigonal pyramid. is represented by the CIF card [CIF]
data_Ga3Ge3N5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.432
_cell_length_b   6.808
_cell_length_c   9.451
_cell_angle_alpha   111.596
_cell_angle_beta   95.460
_cell_angle_gamma   75.053
_symmetry_Int_Tables_number   1
_cell_volume   313.966
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.702  0.306  0.961  1.0
  Ga  Ga1  1  0.298  0.694  0.039  1.0
  Ga  Ga2  1  0.716  0.989  0.595  1.0
  Ga  Ga3  1  0.284  0.011  0.405  1.0
  Ga  Ga4  1  0.189  0.876  0.729  1.0
  Ga  Ga5  1  0.811  0.124  0.271  1.0
  Ge  Ge6  1  0.826  0.506  0.612  1.0
  Ge  Ge7  1  0.174  0.494  0.388  1.0
  Ge  Ge8  1  0.718  0.801  0.932  1.0
  Ge  Ge9  1  0.282  0.199  0.068  1.0
  Ge  Ge10  1  0.858  0.697  0.251  1.0
  Ge  Ge11  1  0.142  0.303  0.749  1.0
  N  N12  1  0.896  0.153  0.777  1.0
  N  N13  1  0.104  0.847  0.223  1.0
  N  N14  1  0.981  0.716  0.581  1.0
  N  N15  1  0.019  0.284  0.419  1.0
  N  N16  1  0.683  0.625  0.062  1.0
  N  N17  1  0.317  0.375  0.938  1.0
  N  N18  1  0.352  0.017  0.621  1.0
  N  N19  1  0.648  0.983  0.379  1.0
  N  N20  1  0.339  0.872  0.919  1.0
  N  N21  1  0.661  0.128  0.081  1.0
[/CIF]
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The material structure described by Ga3Ge3N5 crystallizes in the triclinic P-1 space group. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one N(1), one N(5), and two equivalent N(3) atoms to form distorted edge-sharing GaN4 trigonal pyramids. In the second Ga site, Ga(2) is bonded in a distorted rectangular see-saw-like geometry to one N(1), one N(2), and two equivalent N(4) atoms. In the third Ga site, Ga(3) is bonded in a rectangular see-saw-like geometry to one N(1), one N(2), one N(4), and one N(5) atom. There are three inequivalent Ge sites. In the first Ge site, Ge(1) is bonded in an L-shaped geometry to two equivalent N(2) atoms. In the second Ge site, Ge(2) is bonded in a distorted T-shaped geometry to one N(3) and two equivalent N(5) atoms. In the third Ge site, Ge(3) is bonded in a distorted trigonal non-coplanar geometry to one N(1), one N(3), and one N(4) atom. There are five inequivalent N sites. In the first N site, N(1) is bonded to one Ga(1), one Ga(2), one Ga(3), and one Ge(3) atom to form a mixture of corner and edge-sharing NGa3Ge trigonal pyramids. In the second N site, N(2) is bonded to one Ga(2), one Ga(3), and two equivalent Ge(1) atoms to form distorted NGa2Ge2 tetrahedra that share  a cornercorner with one N(5)Ga2Ge2 tetrahedra,  an edgeedge with one N(2)Ga2Ge2 tetrahedra, and  an edgeedge with one N(1)Ga3Ge trigonal pyramid. In the third N site, N(3) is bonded to two equivalent Ga(1), one Ge(2), and one Ge(3) atom to form NGa2Ge2 trigonal pyramids that share corners with two equivalent N(5)Ga2Ge2 tetrahedra, corners with three equivalent N(1)Ga3Ge trigonal pyramids,  an edgeedge with one N(5)Ga2Ge2 tetrahedra, and  an edgeedge with one N(3)Ga2Ge2 trigonal pyramid. In the fourth N site, N(4) is bonded in a distorted rectangular see-saw-like geometry to one Ga(3), two equivalent Ga(2), and one Ge(3) atom. In the fifth N site, N(5) is bonded to one Ga(1), one Ga(3), and two equivalent Ge(2) atoms to form NGa2Ge2 tetrahedra that share  a cornercorner with one N(2)Ga2Ge2 tetrahedra, corners with two equivalent N(3)Ga2Ge2 trigonal pyramids, corners with two equivalent N(1)Ga3Ge trigonal pyramids,  an edgeedge with one N(5)Ga2Ge2 tetrahedra, and  an edgeedge with one N(3)Ga2Ge2 trigonal pyramid. is represented by the CIF card [CIF]
data_Ga3Ge3N5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.432
_cell_length_b   6.808
_cell_length_c   9.451
_cell_angle_alpha   111.596
_cell_angle_beta   95.460
_cell_angle_gamma   75.053
_symmetry_Int_Tables_number   1
_cell_volume   313.966
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.702  0.306  0.961  1.0
  Ga  Ga1  1  0.298  0.694  0.039  1.0
  Ga  Ga2  1  0.716  0.989  0.595  1.0
  Ga  Ga3  1  0.284  0.011  0.405  1.0
  Ga  Ga4  1  0.189  0.876  0.729  1.0
  Ga  Ga5  1  0.811  0.124  0.271  1.0
  Ge  Ge6  1  0.826  0.506  0.612  1.0
  Ge  Ge7  1  0.174  0.494  0.388  1.0
  Ge  Ge8  1  0.718  0.801  0.932  1.0
  Ge  Ge9  1  0.282  0.199  0.068  1.0
  Ge  Ge10  1  0.858  0.697  0.251  1.0
  Ge  Ge11  1  0.142  0.303  0.749  1.0
  N  N12  1  0.896  0.153  0.777  1.0
  N  N13  1  0.104  0.847  0.223  1.0
  N  N14  1  0.981  0.716  0.581  1.0
  N  N15  1  0.019  0.284  0.419  1.0
  N  N16  1  0.683  0.625  0.062  1.0
  N  N17  1  0.317  0.375  0.938  1.0
  N  N18  1  0.352  0.017  0.621  1.0
  N  N19  1  0.648  0.983  0.379  1.0
  N  N20  1  0.339  0.872  0.919  1.0
  N  N21  1  0.661  0.128  0.081  1.0
[/CIF]
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