The material structure described by Ga2Te3 crystallizes in the monoclinic Cc space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one Te(1), one Te(3), and two equivalent Te(2) atoms to form corner-sharing GaTe4 tetrahedra. In the second Ga site, Ga(2) is bonded to one Te(1), one Te(2), and two equivalent Te(3) atoms to form corner-sharing GaTe4 tetrahedra. There are three inequivalent Te sites. In the first Te site, Te(1) is bonded in a water-like geometry to one Ga(1) and one Ga(2) atom. In the second Te site, Te(2) is bonded in a trigonal non-coplanar geometry to one Ga(2) and two equivalent Ga(1) atoms. In the third Te site, Te(3) is bonded in a trigonal non-coplanar geometry to one Ga(1) and two equivalent Ga(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga2Te3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.483
_cell_length_b   12.677
_cell_length_c   7.298
_cell_angle_alpha   30.306
_cell_angle_beta   54.129
_cell_angle_gamma   59.602
_symmetry_Int_Tables_number   1
_cell_volume   320.903
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.122  0.992  0.246  1.0
  Ga  Ga1  1  0.125  0.665  0.264  1.0
  Ga  Ga2  1  0.622  0.341  0.224  1.0
  Ga  Ga3  1  0.625  0.669  0.258  1.0
  Te  Te4  1  0.982  0.997  0.010  1.0
  Te  Te5  1  0.008  0.320  0.034  1.0
  Te  Te6  1  0.509  0.014  0.994  1.0
  Te  Te7  1  0.013  0.644  0.019  1.0
  Te  Te8  1  0.482  0.337  0.000  1.0
  Te  Te9  1  0.513  0.689  0.951  1.0
[/CIF]
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The material structure described by Ga2Te3 crystallizes in the monoclinic Cc space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one Te(1), one Te(3), and two equivalent Te(2) atoms to form corner-sharing GaTe4 tetrahedra. In the second Ga site, Ga(2) is bonded to one Te(1), one Te(2), and two equivalent Te(3) atoms to form corner-sharing GaTe4 tetrahedra. There are three inequivalent Te sites. In the first Te site, Te(1) is bonded in a water-like geometry to one Ga(1) and one Ga(2) atom. In the second Te site, Te(2) is bonded in a trigonal non-coplanar geometry to one Ga(2) and two equivalent Ga(1) atoms. In the third Te site, Te(3) is bonded in a trigonal non-coplanar geometry to one Ga(1) and two equivalent Ga(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga2Te3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.483
_cell_length_b   12.677
_cell_length_c   7.298
_cell_angle_alpha   30.306
_cell_angle_beta   54.129
_cell_angle_gamma   59.602
_symmetry_Int_Tables_number   1
_cell_volume   320.903
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.122  0.992  0.246  1.0
  Ga  Ga1  1  0.125  0.665  0.264  1.0
  Ga  Ga2  1  0.622  0.341  0.224  1.0
  Ga  Ga3  1  0.625  0.669  0.258  1.0
  Te  Te4  1  0.982  0.997  0.010  1.0
  Te  Te5  1  0.008  0.320  0.034  1.0
  Te  Te6  1  0.509  0.014  0.994  1.0
  Te  Te7  1  0.013  0.644  0.019  1.0
  Te  Te8  1  0.482  0.337  0.000  1.0
  Te  Te9  1  0.513  0.689  0.951  1.0
[/CIF]
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