The crystal structure described by Dy11Si4In6 crystallizes in the tetragonal I4/mmm space group. There are four inequivalent Dy sites. In the first Dy site, Dy(1) is bonded to four equivalent In(1), one Si(1), one Si(2), and one Si(3) atom to form a mixture of distorted corner, edge, and face-sharing DyIn4Si3 pentagonal bipyramids. In the second Dy site, Dy(2) is bonded in a 7-coordinate geometry to two equivalent In(1), two equivalent In(2), one Si(3), and two equivalent Si(1) atoms. In the third Dy site, Dy(3) is bonded in a 7-coordinate geometry to one In(2), two equivalent In(1), two equivalent Si(1), and two equivalent Si(2) atoms. In the fourth Dy site, Dy(4) is bonded in a 9-coordinate geometry to four equivalent In(1), four equivalent In(2), and one Si(2) atom. There are two inequivalent In sites. In the first In site, In(1) is bonded in a 10-coordinate geometry to one Dy(3), one Dy(4), two equivalent Dy(2), four equivalent Dy(1), one In(1), and one In(2) atom. In the second In site, In(2) is bonded in a 11-coordinate geometry to one Dy(3), two equivalent Dy(4), four equivalent Dy(2), two equivalent In(1), and two equivalent In(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 8-coordinate geometry to two equivalent Dy(1), two equivalent Dy(3), and four equivalent Dy(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Dy(4), four equivalent Dy(1), and four equivalent Dy(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to four equivalent Dy(1) and four equivalent Dy(2) atoms. is represented by the CIF file [CIF]
data_Dy11(In3Si2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.436
_cell_length_b   11.436
_cell_length_c   11.436
_cell_angle_alpha   119.987
_cell_angle_beta   119.987
_cell_angle_gamma   90.022
_symmetry_Int_Tables_number   1
_cell_volume   1057.870
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Dy  Dy0  1  0.687  0.937  0.250  1.0
  Dy  Dy1  1  0.687  0.436  0.750  1.0
  Dy  Dy2  1  0.937  0.687  0.250  1.0
  Dy  Dy3  1  0.436  0.687  0.750  1.0
  Dy  Dy4  1  0.313  0.063  0.750  1.0
  Dy  Dy5  1  0.313  0.564  0.250  1.0
  Dy  Dy6  1  0.063  0.313  0.750  1.0
  Dy  Dy7  1  0.564  0.313  0.250  1.0
  Dy  Dy8  1  0.900  0.247  0.347  1.0
  Dy  Dy9  1  0.900  0.553  0.653  1.0
  Dy  Dy10  1  0.247  0.900  0.347  1.0
  Dy  Dy11  1  0.553  0.900  0.653  1.0
  Dy  Dy12  1  0.100  0.753  0.653  1.0
  Dy  Dy13  1  0.100  0.447  0.347  1.0
  Dy  Dy14  1  0.753  0.100  0.653  1.0
  Dy  Dy15  1  0.447  0.100  0.347  1.0
  Dy  Dy16  1  0.332  0.332  0.665  1.0
  Dy  Dy17  1  0.668  0.668  0.335  1.0
  Dy  Dy18  1  0.332  0.668  0.000  1.0
  Dy  Dy19  1  0.668  0.332  0.000  1.0
  Dy  Dy20  1  0.832  0.832  0.000  1.0
  Dy  Dy21  1  0.168  0.168  0.000  1.0
  In  In22  1  0.036  0.036  0.412  1.0
  In  In23  1  0.623  0.623  0.588  1.0
  In  In24  1  0.036  0.623  0.000  1.0
  In  In25  1  0.623  0.036  0.000  1.0
  In  In26  1  0.964  0.964  0.588  1.0
  In  In27  1  0.377  0.377  0.412  1.0
  In  In28  1  0.964  0.377  0.000  1.0
  In  In29  1  0.377  0.964  0.000  1.0
  In  In30  1  0.128  0.128  0.257  1.0
  In  In31  1  0.872  0.872  0.743  1.0
  In  In32  1  0.128  0.872  0.000  1.0
  In  In33  1  0.872  0.128  0.000  1.0
  Si  Si34  1  0.154  0.500  0.654  1.0
  Si  Si35  1  0.846  0.500  0.346  1.0
  Si  Si36  1  0.500  0.846  0.346  1.0
  Si  Si37  1  0.500  0.154  0.654  1.0
  Si  Si38  1  0.622  0.622  0.000  1.0
  Si  Si39  1  0.378  0.378  0.000  1.0
  Si  Si40  1  0.750  0.250  0.500  1.0
  Si  Si41  1  0.250  0.750  0.500  1.0
[/CIF]
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The crystal structure described by Dy11Si4In6 crystallizes in the tetragonal I4/mmm space group. There are four inequivalent Dy sites. In the first Dy site, Dy(1) is bonded to four equivalent In(1), one Si(1), one Si(2), and one Si(3) atom to form a mixture of distorted corner, edge, and face-sharing DyIn4Si3 pentagonal bipyramids. In the second Dy site, Dy(2) is bonded in a 7-coordinate geometry to two equivalent In(1), two equivalent In(2), one Si(3), and two equivalent Si(1) atoms. In the third Dy site, Dy(3) is bonded in a 7-coordinate geometry to one In(2), two equivalent In(1), two equivalent Si(1), and two equivalent Si(2) atoms. In the fourth Dy site, Dy(4) is bonded in a 9-coordinate geometry to four equivalent In(1), four equivalent In(2), and one Si(2) atom. There are two inequivalent In sites. In the first In site, In(1) is bonded in a 10-coordinate geometry to one Dy(3), one Dy(4), two equivalent Dy(2), four equivalent Dy(1), one In(1), and one In(2) atom. In the second In site, In(2) is bonded in a 11-coordinate geometry to one Dy(3), two equivalent Dy(4), four equivalent Dy(2), two equivalent In(1), and two equivalent In(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 8-coordinate geometry to two equivalent Dy(1), two equivalent Dy(3), and four equivalent Dy(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Dy(4), four equivalent Dy(1), and four equivalent Dy(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to four equivalent Dy(1) and four equivalent Dy(2) atoms. is represented by the CIF file [CIF]
data_Dy11(In3Si2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.436
_cell_length_b   11.436
_cell_length_c   11.436
_cell_angle_alpha   119.987
_cell_angle_beta   119.987
_cell_angle_gamma   90.022
_symmetry_Int_Tables_number   1
_cell_volume   1057.870
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Dy  Dy0  1  0.687  0.937  0.250  1.0
  Dy  Dy1  1  0.687  0.436  0.750  1.0
  Dy  Dy2  1  0.937  0.687  0.250  1.0
  Dy  Dy3  1  0.436  0.687  0.750  1.0
  Dy  Dy4  1  0.313  0.063  0.750  1.0
  Dy  Dy5  1  0.313  0.564  0.250  1.0
  Dy  Dy6  1  0.063  0.313  0.750  1.0
  Dy  Dy7  1  0.564  0.313  0.250  1.0
  Dy  Dy8  1  0.900  0.247  0.347  1.0
  Dy  Dy9  1  0.900  0.553  0.653  1.0
  Dy  Dy10  1  0.247  0.900  0.347  1.0
  Dy  Dy11  1  0.553  0.900  0.653  1.0
  Dy  Dy12  1  0.100  0.753  0.653  1.0
  Dy  Dy13  1  0.100  0.447  0.347  1.0
  Dy  Dy14  1  0.753  0.100  0.653  1.0
  Dy  Dy15  1  0.447  0.100  0.347  1.0
  Dy  Dy16  1  0.332  0.332  0.665  1.0
  Dy  Dy17  1  0.668  0.668  0.335  1.0
  Dy  Dy18  1  0.332  0.668  0.000  1.0
  Dy  Dy19  1  0.668  0.332  0.000  1.0
  Dy  Dy20  1  0.832  0.832  0.000  1.0
  Dy  Dy21  1  0.168  0.168  0.000  1.0
  In  In22  1  0.036  0.036  0.412  1.0
  In  In23  1  0.623  0.623  0.588  1.0
  In  In24  1  0.036  0.623  0.000  1.0
  In  In25  1  0.623  0.036  0.000  1.0
  In  In26  1  0.964  0.964  0.588  1.0
  In  In27  1  0.377  0.377  0.412  1.0
  In  In28  1  0.964  0.377  0.000  1.0
  In  In29  1  0.377  0.964  0.000  1.0
  In  In30  1  0.128  0.128  0.257  1.0
  In  In31  1  0.872  0.872  0.743  1.0
  In  In32  1  0.128  0.872  0.000  1.0
  In  In33  1  0.872  0.128  0.000  1.0
  Si  Si34  1  0.154  0.500  0.654  1.0
  Si  Si35  1  0.846  0.500  0.346  1.0
  Si  Si36  1  0.500  0.846  0.346  1.0
  Si  Si37  1  0.500  0.154  0.654  1.0
  Si  Si38  1  0.622  0.622  0.000  1.0
  Si  Si39  1  0.378  0.378  0.000  1.0
  Si  Si40  1  0.750  0.250  0.500  1.0
  Si  Si41  1  0.250  0.750  0.500  1.0
[/CIF]
.