The crystal structure described by SiC is Moissanite-6H-like structured and crystallizes in the trigonal R3m space group. There are four inequivalent Si sites. In the first Si site, Si(1,3,6,9) is bonded to one C(2,4,6,7) and three equivalent C(1,5,8) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2,7,8) is bonded to one C(1,5,8) and three equivalent C(2,4,6,7) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(4) is bonded to one C(3) and three equivalent C(9) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(5) is bonded to one C(9) and three equivalent C(2,4,6,7) atoms to form corner-sharing SiC4 tetrahedra. There are four inequivalent C sites. In the first C site, C(9) is bonded to one Si(5) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(1,5,8) is bonded to one Si(2,7,8) and three equivalent Si(1,3,6,9) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(2,4,6,7) is bonded to one Si(1,3,6,9) and three equivalent Si(2,7,8) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(3) is bonded to one Si(4) and three equivalent Si(1,3,6,9) atoms to form corner-sharing CSi4 tetrahedra. is represented by the CIF card [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   22.814
_cell_length_b   22.814
_cell_length_c   22.814
_cell_angle_alpha   7.787
_cell_angle_beta   7.787
_cell_angle_gamma   7.787
_symmetry_Int_Tables_number   1
_cell_volume   189.067
_cell_formula_units_Z   9
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.889  0.889  0.889  1.0
  Si  Si1  1  0.519  0.519  0.519  1.0
  Si  Si2  1  0.148  0.148  0.148  1.0
  Si  Si3  1  0.296  0.296  0.296  1.0
  Si  Si4  1  0.593  0.593  0.593  1.0
  Si  Si5  1  1.000  1.000  1.000  1.0
  Si  Si6  1  0.444  0.444  0.444  1.0
  Si  Si7  1  0.370  0.370  0.370  1.0
  Si  Si8  1  0.741  0.741  0.741  1.0
  C  C9  1  0.398  0.398  0.398  1.0
  C  C10  1  0.769  0.769  0.769  1.0
  C  C11  1  0.324  0.324  0.324  1.0
  C  C12  1  0.028  0.028  0.028  1.0
  C  C13  1  0.472  0.472  0.472  1.0
  C  C14  1  0.917  0.917  0.917  1.0
  C  C15  1  0.176  0.176  0.176  1.0
  C  C16  1  0.546  0.546  0.546  1.0
  C  C17  1  0.620  0.620  0.620  1.0
[/CIF]
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The crystal structure described by SiC is Moissanite-6H-like structured and crystallizes in the trigonal R3m space group. There are four inequivalent Si sites. In the first Si site, Si(1,3,6,9) is bonded to one C(2,4,6,7) and three equivalent C(1,5,8) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2,7,8) is bonded to one C(1,5,8) and three equivalent C(2,4,6,7) atoms to form corner-sharing SiC4 tetrahedra. In the third Si site, Si(4) is bonded to one C(3) and three equivalent C(9) atoms to form corner-sharing SiC4 tetrahedra. In the fourth Si site, Si(5) is bonded to one C(9) and three equivalent C(2,4,6,7) atoms to form corner-sharing SiC4 tetrahedra. There are four inequivalent C sites. In the first C site, C(9) is bonded to one Si(5) and three equivalent Si(4) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(1,5,8) is bonded to one Si(2,7,8) and three equivalent Si(1,3,6,9) atoms to form corner-sharing CSi4 tetrahedra. In the third C site, C(2,4,6,7) is bonded to one Si(1,3,6,9) and three equivalent Si(2,7,8) atoms to form corner-sharing CSi4 tetrahedra. In the fourth C site, C(3) is bonded to one Si(4) and three equivalent Si(1,3,6,9) atoms to form corner-sharing CSi4 tetrahedra. is represented by the CIF card [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   22.814
_cell_length_b   22.814
_cell_length_c   22.814
_cell_angle_alpha   7.787
_cell_angle_beta   7.787
_cell_angle_gamma   7.787
_symmetry_Int_Tables_number   1
_cell_volume   189.067
_cell_formula_units_Z   9
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.889  0.889  0.889  1.0
  Si  Si1  1  0.519  0.519  0.519  1.0
  Si  Si2  1  0.148  0.148  0.148  1.0
  Si  Si3  1  0.296  0.296  0.296  1.0
  Si  Si4  1  0.593  0.593  0.593  1.0
  Si  Si5  1  1.000  1.000  1.000  1.0
  Si  Si6  1  0.444  0.444  0.444  1.0
  Si  Si7  1  0.370  0.370  0.370  1.0
  Si  Si8  1  0.741  0.741  0.741  1.0
  C  C9  1  0.398  0.398  0.398  1.0
  C  C10  1  0.769  0.769  0.769  1.0
  C  C11  1  0.324  0.324  0.324  1.0
  C  C12  1  0.028  0.028  0.028  1.0
  C  C13  1  0.472  0.472  0.472  1.0
  C  C14  1  0.917  0.917  0.917  1.0
  C  C15  1  0.176  0.176  0.176  1.0
  C  C16  1  0.546  0.546  0.546  1.0
  C  C17  1  0.620  0.620  0.620  1.0
[/CIF]
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