The material described by U3Ga2Si3 is Magnesium tetraboride-derived structured and crystallizes in the orthorhombic Fmm2 space group. There are three inequivalent U sites. In the first U site, U(1) is bonded in a 9-coordinate geometry to one U(3), two equivalent U(2), two equivalent Si(1), two equivalent Si(2), and two equivalent Si(3) atoms. In the second U site, U(2) is bonded in a 10-coordinate geometry to two equivalent U(1), two equivalent Ga(2), two equivalent Si(1), two equivalent Si(2), and two equivalent Si(3) atoms. In the third U site, U(3) is bonded in a 8-coordinate geometry to one U(1), two equivalent Ga(2), two equivalent Si(1), two equivalent Si(2), and two equivalent Si(3) atoms. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded in a 4-coordinate geometry to two equivalent Si(1), two equivalent Si(2), and two equivalent Si(3) atoms. In the second Ga site, Ga(2) is bonded in a 8-coordinate geometry to two equivalent U(2), two equivalent U(3), one Ga(2), one Si(1), and two equivalent Si(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to two equivalent U(1), two equivalent U(2), two equivalent U(3), one Ga(2), and two equivalent Ga(1) atoms. In the second Si site, Si(2) is bonded in a 10-coordinate geometry to two equivalent U(1), two equivalent U(2), two equivalent U(3), two equivalent Ga(1), and two equivalent Ga(2) atoms. In the third Si site, Si(3) is bonded to two equivalent U(1), two equivalent U(2), two equivalent U(3), and two equivalent Ga(1) atoms to form a mixture of distorted corner and edge-sharing SiU6Ga2 hexagonal bipyramids. is represented by the CIF file [CIF]
data_U3Ga2Si3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.668
_cell_length_b   7.541
_cell_length_c   7.354
_cell_angle_alpha   61.957
_cell_angle_beta   60.220
_cell_angle_gamma   57.823
_symmetry_Int_Tables_number   1
_cell_volume   299.913
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  U  U0  1  0.150  0.552  0.850  1.0
  U  U1  1  0.448  0.850  0.552  1.0
  U  U2  1  0.026  0.974  0.663  1.0
  U  U3  1  0.337  0.663  0.974  1.0
  U  U4  1  0.816  0.488  0.184  1.0
  U  U5  1  0.512  0.184  0.488  1.0
  Ga  Ga6  1  0.507  0.993  0.993  1.0
  Ga  Ga7  1  0.007  0.493  0.493  1.0
  Ga  Ga8  1  0.011  0.989  0.265  1.0
  Ga  Ga9  1  0.735  0.265  0.989  1.0
  Si  Si10  1  0.332  0.668  0.373  1.0
  Si  Si11  1  0.627  0.373  0.668  1.0
  Si  Si12  1  0.141  0.167  0.859  1.0
  Si  Si13  1  0.833  0.859  0.167  1.0
  Si  Si14  1  0.258  0.242  0.242  1.0
  Si  Si15  1  0.758  0.742  0.742  1.0
[/CIF]
.
The material described by U3Ga2Si3 is Magnesium tetraboride-derived structured and crystallizes in the orthorhombic Fmm2 space group. There are three inequivalent U sites. In the first U site, U(1) is bonded in a 9-coordinate geometry to one U(3), two equivalent U(2), two equivalent Si(1), two equivalent Si(2), and two equivalent Si(3) atoms. In the second U site, U(2) is bonded in a 10-coordinate geometry to two equivalent U(1), two equivalent Ga(2), two equivalent Si(1), two equivalent Si(2), and two equivalent Si(3) atoms. In the third U site, U(3) is bonded in a 8-coordinate geometry to one U(1), two equivalent Ga(2), two equivalent Si(1), two equivalent Si(2), and two equivalent Si(3) atoms. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded in a 4-coordinate geometry to two equivalent Si(1), two equivalent Si(2), and two equivalent Si(3) atoms. In the second Ga site, Ga(2) is bonded in a 8-coordinate geometry to two equivalent U(2), two equivalent U(3), one Ga(2), one Si(1), and two equivalent Si(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to two equivalent U(1), two equivalent U(2), two equivalent U(3), one Ga(2), and two equivalent Ga(1) atoms. In the second Si site, Si(2) is bonded in a 10-coordinate geometry to two equivalent U(1), two equivalent U(2), two equivalent U(3), two equivalent Ga(1), and two equivalent Ga(2) atoms. In the third Si site, Si(3) is bonded to two equivalent U(1), two equivalent U(2), two equivalent U(3), and two equivalent Ga(1) atoms to form a mixture of distorted corner and edge-sharing SiU6Ga2 hexagonal bipyramids. is represented by the CIF file [CIF]
data_U3Ga2Si3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.668
_cell_length_b   7.541
_cell_length_c   7.354
_cell_angle_alpha   61.957
_cell_angle_beta   60.220
_cell_angle_gamma   57.823
_symmetry_Int_Tables_number   1
_cell_volume   299.913
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  U  U0  1  0.150  0.552  0.850  1.0
  U  U1  1  0.448  0.850  0.552  1.0
  U  U2  1  0.026  0.974  0.663  1.0
  U  U3  1  0.337  0.663  0.974  1.0
  U  U4  1  0.816  0.488  0.184  1.0
  U  U5  1  0.512  0.184  0.488  1.0
  Ga  Ga6  1  0.507  0.993  0.993  1.0
  Ga  Ga7  1  0.007  0.493  0.493  1.0
  Ga  Ga8  1  0.011  0.989  0.265  1.0
  Ga  Ga9  1  0.735  0.265  0.989  1.0
  Si  Si10  1  0.332  0.668  0.373  1.0
  Si  Si11  1  0.627  0.373  0.668  1.0
  Si  Si12  1  0.141  0.167  0.859  1.0
  Si  Si13  1  0.833  0.859  0.167  1.0
  Si  Si14  1  0.258  0.242  0.242  1.0
  Si  Si15  1  0.758  0.742  0.742  1.0
[/CIF]
.