The material described by Na4GaGeSi2PO12 crystallizes in the monoclinic Cc space group. There are four inequivalent Na sites. In the first Na site, Na(1) is bonded in a 8-coordinate geometry to one O(1), one O(10), one O(11), one O(3), one O(7), one O(9), and two equivalent O(5) atoms. In the second Na site, Na(2) is bonded in a 8-coordinate geometry to one O(1), one O(11), one O(12), one O(3), one O(4), one O(6), one O(8), and one O(9) atom. In the third Na site, Na(3) is bonded in a 8-coordinate geometry to one O(10), one O(12), one O(4), one O(6), one O(7), one O(8), and two equivalent O(2) atoms. In the fourth Na site, Na(4) is bonded in a distorted hexagonal planar geometry to one O(10), one O(11), one O(12), one O(7), one O(8), and one O(9) atom. Ga(1) is bonded to one O(1), one O(2), one O(3), one O(7), one O(8), and one O(9) atom to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent P(1)O4 tetrahedra. Ge(1) is bonded to one O(10), one O(11), one O(12), one O(4), one O(5), and one O(6) atom to form GeO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent P(1)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(11), one O(2), one O(5), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 33-38°. In the second Si site, Si(2) is bonded to one O(12), one O(3), one O(4), and one O(7) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 31-38°. P(1) is bonded to one O(1), one O(10), one O(6), and one O(9) atom to form PO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 32-37°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a 2-coordinate geometry to one Na(1), one Na(2), one Ga(1), and one P(1) atom. In the second O site, O(2) is bonded in a 4-coordinate geometry to two equivalent Na(3), one Ga(1), and one Si(1) atom. In the third O site, O(3) is bonded in a 4-coordinate geometry to one Na(1), one Na(2), one Ga(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Na(2), one Na(3), one Ge(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to two equivalent Na(1), one Ge(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a 2-coordinate geometry to one Na(2), one Na(3), one Ge(1), and one P(1) atom. In the seventh O site, O(7) is bonded to one Na(1), one Na(3), one Na(4), one Ga(1), and one Si(2) atom to form distorted ONa3GaSi trigonal bipyramids that share  a cornercorner with one O(12)Na3SiGe trigonal bipyramid, corners with two equivalent O(11)Na3SiGe trigonal bipyramids,  an edgeedge with one O(12)Na3SiGe trigonal bipyramid, and  a faceface with one O(8)Na3GaSi trigonal bipyramid. In the eighth O site, O(8) is bonded to one Na(2), one Na(3), one Na(4), one Ga(1), and one Si(1) atom to form distorted ONa3GaSi trigonal bipyramids that share  a cornercorner with one O(11)Na3SiGe trigonal bipyramid, corners with three equivalent O(12)Na3SiGe trigonal bipyramids,  an edgeedge with one O(11)Na3SiGe trigonal bipyramid, and  a faceface with one O(7)Na3GaSi trigonal bipyramid. In the ninth O site, O(9) is bonded in a 5-coordinate geometry to one Na(1), one Na(2), one Na(4), one Ga(1), and one P(1) atom. In the tenth O site, O(10) is bonded in a 5-coordinate geometry to one Na(1), one Na(3), one Na(4), one Ge(1), and one P(1) atom. In the eleventh O site, O(11) is bonded to one Na(1), one Na(2), one Na(4), one Ge(1), and one Si(1) atom to form distorted ONa3SiGe trigonal bipyramids that share  a cornercorner with one O(8)Na3GaSi trigonal bipyramid, corners with two equivalent O(7)Na3GaSi trigonal bipyramids,  an edgeedge with one O(8)Na3GaSi trigonal bipyramid, and  a faceface with one O(12)Na3SiGe trigonal bipyramid. In the twelfth O site, O(12) is bonded to one Na(2), one Na(3), one Na(4), one Ge(1), and one Si(2) atom to form distorted ONa3SiGe trigonal bipyramids that share  a cornercorner with one O(7)Na3GaSi trigonal bipyramid, corners with three equivalent O(8)Na3GaSi trigonal bipyramids,  an edgeedge with one O(7)Na3GaSi trigonal bipyramid, and  a faceface with one O(11)Na3SiGe trigonal bipyramid. is represented by the CIF file [CIF]
data_Na4GaSi2GePO12
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.783
_cell_length_b   8.846
_cell_length_c   8.847
_cell_angle_alpha   119.996
_cell_angle_beta   119.549
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   489.326
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.055  0.359  0.700  1.0
  Ga  Ga1  1  0.555  0.841  0.700  1.0
  Ge  Ge2  1  0.944  0.650  0.297  1.0
  Ge  Ge3  1  0.444  0.146  0.297  1.0
  Na  Na4  1  0.751  0.246  0.132  1.0
  Na  Na5  1  0.740  0.879  0.497  1.0
  Na  Na6  1  0.751  0.625  0.867  1.0
  Na  Na7  1  0.240  0.118  0.497  1.0
  Na  Na8  1  0.251  0.386  0.132  1.0
  Na  Na9  1  0.251  0.742  0.867  1.0
  Na  Na10  1  0.494  0.503  0.997  1.0
  Na  Na11  1  0.994  0.994  0.997  1.0
  O  O12  1  0.925  0.274  0.791  1.0
  O  O13  1  0.932  0.523  0.664  1.0
  O  O14  1  0.935  0.140  0.419  1.0
  O  O15  1  0.432  0.641  0.664  1.0
  O  O16  1  0.425  0.016  0.791  1.0
  O  O17  1  0.435  0.779  0.419  1.0
  O  O18  1  0.068  0.734  0.219  1.0
  O  O19  1  0.069  0.485  0.334  1.0
  O  O20  1  0.076  0.861  0.593  1.0
  O  O21  1  0.569  0.349  0.334  1.0
  O  O22  1  0.568  0.985  0.219  1.0
  O  O23  1  0.576  0.232  0.593  1.0
  O  O24  1  0.236  0.572  0.010  1.0
  O  O25  1  0.237  0.426  0.658  1.0
  O  O26  1  0.233  0.216  0.802  1.0
  O  O27  1  0.737  0.731  0.658  1.0
  O  O28  1  0.736  0.938  0.010  1.0
  O  O29  1  0.733  0.087  0.802  1.0
  O  O30  1  0.762  0.426  0.980  1.0
  O  O31  1  0.770  0.560  0.330  1.0
  O  O32  1  0.767  0.770  0.206  1.0
  O  O33  1  0.270  0.270  0.330  1.0
  O  O34  1  0.262  0.054  0.980  1.0
  O  O35  1  0.267  0.937  0.206  1.0
  P  P36  1  0.752  0.253  0.790  1.0
  P  P37  1  0.252  0.037  0.790  1.0
  Si  Si38  1  0.752  0.540  0.498  1.0
  Si  Si39  1  0.754  0.962  0.214  1.0
  Si  Si40  1  0.252  0.459  0.498  1.0
  Si  Si41  1  0.254  0.752  0.214  1.0
[/CIF]
.
The material described by Na4GaGeSi2PO12 crystallizes in the monoclinic Cc space group. There are four inequivalent Na sites. In the first Na site, Na(1) is bonded in a 8-coordinate geometry to one O(1), one O(10), one O(11), one O(3), one O(7), one O(9), and two equivalent O(5) atoms. In the second Na site, Na(2) is bonded in a 8-coordinate geometry to one O(1), one O(11), one O(12), one O(3), one O(4), one O(6), one O(8), and one O(9) atom. In the third Na site, Na(3) is bonded in a 8-coordinate geometry to one O(10), one O(12), one O(4), one O(6), one O(7), one O(8), and two equivalent O(2) atoms. In the fourth Na site, Na(4) is bonded in a distorted hexagonal planar geometry to one O(10), one O(11), one O(12), one O(7), one O(8), and one O(9) atom. Ga(1) is bonded to one O(1), one O(2), one O(3), one O(7), one O(8), and one O(9) atom to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent P(1)O4 tetrahedra. Ge(1) is bonded to one O(10), one O(11), one O(12), one O(4), one O(5), and one O(6) atom to form GeO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent P(1)O4 tetrahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(11), one O(2), one O(5), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 33-38°. In the second Si site, Si(2) is bonded to one O(12), one O(3), one O(4), and one O(7) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 31-38°. P(1) is bonded to one O(1), one O(10), one O(6), and one O(9) atom to form PO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 32-37°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a 2-coordinate geometry to one Na(1), one Na(2), one Ga(1), and one P(1) atom. In the second O site, O(2) is bonded in a 4-coordinate geometry to two equivalent Na(3), one Ga(1), and one Si(1) atom. In the third O site, O(3) is bonded in a 4-coordinate geometry to one Na(1), one Na(2), one Ga(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Na(2), one Na(3), one Ge(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a 4-coordinate geometry to two equivalent Na(1), one Ge(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a 2-coordinate geometry to one Na(2), one Na(3), one Ge(1), and one P(1) atom. In the seventh O site, O(7) is bonded to one Na(1), one Na(3), one Na(4), one Ga(1), and one Si(2) atom to form distorted ONa3GaSi trigonal bipyramids that share  a cornercorner with one O(12)Na3SiGe trigonal bipyramid, corners with two equivalent O(11)Na3SiGe trigonal bipyramids,  an edgeedge with one O(12)Na3SiGe trigonal bipyramid, and  a faceface with one O(8)Na3GaSi trigonal bipyramid. In the eighth O site, O(8) is bonded to one Na(2), one Na(3), one Na(4), one Ga(1), and one Si(1) atom to form distorted ONa3GaSi trigonal bipyramids that share  a cornercorner with one O(11)Na3SiGe trigonal bipyramid, corners with three equivalent O(12)Na3SiGe trigonal bipyramids,  an edgeedge with one O(11)Na3SiGe trigonal bipyramid, and  a faceface with one O(7)Na3GaSi trigonal bipyramid. In the ninth O site, O(9) is bonded in a 5-coordinate geometry to one Na(1), one Na(2), one Na(4), one Ga(1), and one P(1) atom. In the tenth O site, O(10) is bonded in a 5-coordinate geometry to one Na(1), one Na(3), one Na(4), one Ge(1), and one P(1) atom. In the eleventh O site, O(11) is bonded to one Na(1), one Na(2), one Na(4), one Ge(1), and one Si(1) atom to form distorted ONa3SiGe trigonal bipyramids that share  a cornercorner with one O(8)Na3GaSi trigonal bipyramid, corners with two equivalent O(7)Na3GaSi trigonal bipyramids,  an edgeedge with one O(8)Na3GaSi trigonal bipyramid, and  a faceface with one O(12)Na3SiGe trigonal bipyramid. In the twelfth O site, O(12) is bonded to one Na(2), one Na(3), one Na(4), one Ge(1), and one Si(2) atom to form distorted ONa3SiGe trigonal bipyramids that share  a cornercorner with one O(7)Na3GaSi trigonal bipyramid, corners with three equivalent O(8)Na3GaSi trigonal bipyramids,  an edgeedge with one O(7)Na3GaSi trigonal bipyramid, and  a faceface with one O(11)Na3SiGe trigonal bipyramid. is represented by the CIF file [CIF]
data_Na4GaSi2GePO12
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.783
_cell_length_b   8.846
_cell_length_c   8.847
_cell_angle_alpha   119.996
_cell_angle_beta   119.549
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   489.326
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.055  0.359  0.700  1.0
  Ga  Ga1  1  0.555  0.841  0.700  1.0
  Ge  Ge2  1  0.944  0.650  0.297  1.0
  Ge  Ge3  1  0.444  0.146  0.297  1.0
  Na  Na4  1  0.751  0.246  0.132  1.0
  Na  Na5  1  0.740  0.879  0.497  1.0
  Na  Na6  1  0.751  0.625  0.867  1.0
  Na  Na7  1  0.240  0.118  0.497  1.0
  Na  Na8  1  0.251  0.386  0.132  1.0
  Na  Na9  1  0.251  0.742  0.867  1.0
  Na  Na10  1  0.494  0.503  0.997  1.0
  Na  Na11  1  0.994  0.994  0.997  1.0
  O  O12  1  0.925  0.274  0.791  1.0
  O  O13  1  0.932  0.523  0.664  1.0
  O  O14  1  0.935  0.140  0.419  1.0
  O  O15  1  0.432  0.641  0.664  1.0
  O  O16  1  0.425  0.016  0.791  1.0
  O  O17  1  0.435  0.779  0.419  1.0
  O  O18  1  0.068  0.734  0.219  1.0
  O  O19  1  0.069  0.485  0.334  1.0
  O  O20  1  0.076  0.861  0.593  1.0
  O  O21  1  0.569  0.349  0.334  1.0
  O  O22  1  0.568  0.985  0.219  1.0
  O  O23  1  0.576  0.232  0.593  1.0
  O  O24  1  0.236  0.572  0.010  1.0
  O  O25  1  0.237  0.426  0.658  1.0
  O  O26  1  0.233  0.216  0.802  1.0
  O  O27  1  0.737  0.731  0.658  1.0
  O  O28  1  0.736  0.938  0.010  1.0
  O  O29  1  0.733  0.087  0.802  1.0
  O  O30  1  0.762  0.426  0.980  1.0
  O  O31  1  0.770  0.560  0.330  1.0
  O  O32  1  0.767  0.770  0.206  1.0
  O  O33  1  0.270  0.270  0.330  1.0
  O  O34  1  0.262  0.054  0.980  1.0
  O  O35  1  0.267  0.937  0.206  1.0
  P  P36  1  0.752  0.253  0.790  1.0
  P  P37  1  0.252  0.037  0.790  1.0
  Si  Si38  1  0.752  0.540  0.498  1.0
  Si  Si39  1  0.754  0.962  0.214  1.0
  Si  Si40  1  0.252  0.459  0.498  1.0
  Si  Si41  1  0.254  0.752  0.214  1.0
[/CIF]
.