The material structure described by Cu2GaAl(AsO5)2 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Cu sites. In the first Cu site, Cu(1) is bonded to one O(3), one O(4), one O(5), one O(7), and one O(8) atom to form distorted CuO5 trigonal bipyramids that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent As(1)O4 tetrahedra, corners with two equivalent As(2)O4 tetrahedra, corners with two equivalent Cu(2)O5 trigonal bipyramids, and  an edgeedge with one Cu(2)O5 trigonal bipyramid. In the second Cu site, Cu(2) is bonded to one O(3), one O(4), one O(6), one O(7), and one O(8) atom to form distorted CuO5 trigonal bipyramids that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent As(1)O4 tetrahedra, corners with two equivalent As(2)O4 tetrahedra, corners with two equivalent Cu(1)O5 trigonal bipyramids, and  an edgeedge with one Cu(1)O5 trigonal bipyramid. Ga(1) is bonded to one O(1), one O(10), one O(5), and one O(6) atom to form GaO4 tetrahedra that share  a cornercorner with one As(1)O4 tetrahedra,  a cornercorner with one As(2)O4 tetrahedra, corners with two equivalent Al(1)O4 tetrahedra,  a cornercorner with one Cu(1)O5 trigonal bipyramid, and  a cornercorner with one Cu(2)O5 trigonal bipyramid. Al(1) is bonded to one O(2), one O(5), one O(6), and one O(9) atom to form AlO4 tetrahedra that share  a cornercorner with one As(1)O4 tetrahedra,  a cornercorner with one As(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra,  a cornercorner with one Cu(1)O5 trigonal bipyramid, and  a cornercorner with one Cu(2)O5 trigonal bipyramid. There are two inequivalent As sites. In the first As site, As(1) is bonded to one O(1), one O(3), one O(7), and one O(9) atom to form AsO4 tetrahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent Cu(1)O5 trigonal bipyramids, and corners with two equivalent Cu(2)O5 trigonal bipyramids. In the second As site, As(2) is bonded to one O(10), one O(2), one O(4), and one O(8) atom to form AsO4 tetrahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent Cu(1)O5 trigonal bipyramids, and corners with two equivalent Cu(2)O5 trigonal bipyramids. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Ga(1) and one As(1) atom. In the second O site, O(2) is bonded in a bent 120 degrees geometry to one Al(1) and one As(2) atom. In the third O site, O(3) is bonded in a trigonal planar geometry to one Cu(1), one Cu(2), and one As(1) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Cu(1), one Cu(2), and one As(2) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Cu(1), one Ga(1), and one Al(1) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Cu(2), one Ga(1), and one Al(1) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to one Cu(1), one Cu(2), and one As(1) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Cu(1), one Cu(2), and one As(2) atom. In the ninth O site, O(9) is bonded in a bent 120 degrees geometry to one Al(1) and one As(1) atom. In the tenth O site, O(10) is bonded in a bent 120 degrees geometry to one Ga(1) and one As(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_AlGaCu2(AsO5)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.395
_cell_length_b   5.761
_cell_length_c   7.472
_cell_angle_alpha   79.458
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   439.911
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Al  Al0  1  0.324  0.813  0.144  1.0
  Al  Al1  1  0.824  0.187  0.856  1.0
  Ga  Ga2  1  0.677  0.688  0.855  1.0
  Ga  Ga3  1  0.177  0.312  0.145  1.0
  Cu  Cu4  1  0.359  0.340  0.461  1.0
  Cu  Cu5  1  0.859  0.660  0.539  1.0
  Cu  Cu6  1  0.641  0.162  0.539  1.0
  Cu  Cu7  1  0.141  0.838  0.461  1.0
  As  As8  1  0.609  0.676  0.277  1.0
  As  As9  1  0.109  0.324  0.723  1.0
  As  As10  1  0.389  0.826  0.724  1.0
  As  As11  1  0.889  0.174  0.276  1.0
  O  O12  1  0.705  0.619  0.105  1.0
  O  O13  1  0.205  0.381  0.895  1.0
  O  O14  1  0.298  0.878  0.904  1.0
  O  O15  1  0.798  0.122  0.096  1.0
  O  O16  1  0.539  0.408  0.382  1.0
  O  O17  1  0.039  0.592  0.618  1.0
  O  O18  1  0.460  0.092  0.619  1.0
  O  O19  1  0.960  0.908  0.381  1.0
  O  O20  1  0.282  0.519  0.237  1.0
  O  O21  1  0.782  0.481  0.763  1.0
  O  O22  1  0.723  0.995  0.763  1.0
  O  O23  1  0.223  0.005  0.237  1.0
  O  O24  1  0.695  0.797  0.434  1.0
  O  O25  1  0.195  0.203  0.566  1.0
  O  O26  1  0.304  0.704  0.567  1.0
  O  O27  1  0.804  0.296  0.433  1.0
  O  O28  1  0.488  0.867  0.194  1.0
  O  O29  1  0.988  0.133  0.806  1.0
  O  O30  1  0.507  0.626  0.804  1.0
  O  O31  1  0.007  0.374  0.196  1.0
[/CIF]
.
The material structure described by Cu2GaAl(AsO5)2 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Cu sites. In the first Cu site, Cu(1) is bonded to one O(3), one O(4), one O(5), one O(7), and one O(8) atom to form distorted CuO5 trigonal bipyramids that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent As(1)O4 tetrahedra, corners with two equivalent As(2)O4 tetrahedra, corners with two equivalent Cu(2)O5 trigonal bipyramids, and  an edgeedge with one Cu(2)O5 trigonal bipyramid. In the second Cu site, Cu(2) is bonded to one O(3), one O(4), one O(6), one O(7), and one O(8) atom to form distorted CuO5 trigonal bipyramids that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent As(1)O4 tetrahedra, corners with two equivalent As(2)O4 tetrahedra, corners with two equivalent Cu(1)O5 trigonal bipyramids, and  an edgeedge with one Cu(1)O5 trigonal bipyramid. Ga(1) is bonded to one O(1), one O(10), one O(5), and one O(6) atom to form GaO4 tetrahedra that share  a cornercorner with one As(1)O4 tetrahedra,  a cornercorner with one As(2)O4 tetrahedra, corners with two equivalent Al(1)O4 tetrahedra,  a cornercorner with one Cu(1)O5 trigonal bipyramid, and  a cornercorner with one Cu(2)O5 trigonal bipyramid. Al(1) is bonded to one O(2), one O(5), one O(6), and one O(9) atom to form AlO4 tetrahedra that share  a cornercorner with one As(1)O4 tetrahedra,  a cornercorner with one As(2)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra,  a cornercorner with one Cu(1)O5 trigonal bipyramid, and  a cornercorner with one Cu(2)O5 trigonal bipyramid. There are two inequivalent As sites. In the first As site, As(1) is bonded to one O(1), one O(3), one O(7), and one O(9) atom to form AsO4 tetrahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent Cu(1)O5 trigonal bipyramids, and corners with two equivalent Cu(2)O5 trigonal bipyramids. In the second As site, As(2) is bonded to one O(10), one O(2), one O(4), and one O(8) atom to form AsO4 tetrahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Al(1)O4 tetrahedra, corners with two equivalent Cu(1)O5 trigonal bipyramids, and corners with two equivalent Cu(2)O5 trigonal bipyramids. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Ga(1) and one As(1) atom. In the second O site, O(2) is bonded in a bent 120 degrees geometry to one Al(1) and one As(2) atom. In the third O site, O(3) is bonded in a trigonal planar geometry to one Cu(1), one Cu(2), and one As(1) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Cu(1), one Cu(2), and one As(2) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Cu(1), one Ga(1), and one Al(1) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Cu(2), one Ga(1), and one Al(1) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to one Cu(1), one Cu(2), and one As(1) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Cu(1), one Cu(2), and one As(2) atom. In the ninth O site, O(9) is bonded in a bent 120 degrees geometry to one Al(1) and one As(1) atom. In the tenth O site, O(10) is bonded in a bent 120 degrees geometry to one Ga(1) and one As(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_AlGaCu2(AsO5)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.395
_cell_length_b   5.761
_cell_length_c   7.472
_cell_angle_alpha   79.458
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   439.911
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Al  Al0  1  0.324  0.813  0.144  1.0
  Al  Al1  1  0.824  0.187  0.856  1.0
  Ga  Ga2  1  0.677  0.688  0.855  1.0
  Ga  Ga3  1  0.177  0.312  0.145  1.0
  Cu  Cu4  1  0.359  0.340  0.461  1.0
  Cu  Cu5  1  0.859  0.660  0.539  1.0
  Cu  Cu6  1  0.641  0.162  0.539  1.0
  Cu  Cu7  1  0.141  0.838  0.461  1.0
  As  As8  1  0.609  0.676  0.277  1.0
  As  As9  1  0.109  0.324  0.723  1.0
  As  As10  1  0.389  0.826  0.724  1.0
  As  As11  1  0.889  0.174  0.276  1.0
  O  O12  1  0.705  0.619  0.105  1.0
  O  O13  1  0.205  0.381  0.895  1.0
  O  O14  1  0.298  0.878  0.904  1.0
  O  O15  1  0.798  0.122  0.096  1.0
  O  O16  1  0.539  0.408  0.382  1.0
  O  O17  1  0.039  0.592  0.618  1.0
  O  O18  1  0.460  0.092  0.619  1.0
  O  O19  1  0.960  0.908  0.381  1.0
  O  O20  1  0.282  0.519  0.237  1.0
  O  O21  1  0.782  0.481  0.763  1.0
  O  O22  1  0.723  0.995  0.763  1.0
  O  O23  1  0.223  0.005  0.237  1.0
  O  O24  1  0.695  0.797  0.434  1.0
  O  O25  1  0.195  0.203  0.566  1.0
  O  O26  1  0.304  0.704  0.567  1.0
  O  O27  1  0.804  0.296  0.433  1.0
  O  O28  1  0.488  0.867  0.194  1.0
  O  O29  1  0.988  0.133  0.806  1.0
  O  O30  1  0.507  0.626  0.804  1.0
  O  O31  1  0.007  0.374  0.196  1.0
[/CIF]
.