The compound described by Ga4SiO8 crystallizes in the monoclinic C2/m space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), two equivalent O(2), and three equivalent O(3) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O6 octahedra, corners with five equivalent Ga(2)O4 tetrahedra, and edges with four equivalent Ga(1)O6 octahedra. The corner-sharing octahedral tilt angles are 51°. In the second Ga site, Ga(2) is bonded to one O(3), one O(4), and two equivalent O(1) atoms to form GaO4 tetrahedra that share corners with two equivalent Si(1)O6 octahedra, corners with five equivalent Ga(1)O6 octahedra, and corners with two equivalent Ga(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 55-70°. Si(1) is bonded to two equivalent O(2) and four equivalent O(4) atoms to form SiO6 octahedra that share corners with four equivalent Ga(1)O6 octahedra, corners with four equivalent Ga(2)O4 tetrahedra, and edges with two equivalent Si(1)O6 octahedra. The corner-sharing octahedral tilt angles are 51°. There are four inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one Ga(1) and two equivalent Ga(2) atoms. In the second O site, O(2) is bonded in a trigonal planar geometry to two equivalent Ga(1) and one Si(1) atom. In the third O site, O(3) is bonded to one Ga(2) and three equivalent Ga(1) atoms to form a mixture of distorted edge and corner-sharing OGa4 tetrahedra. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Ga(2) and two equivalent Si(1) atoms. is represented by the CIF card [CIF]
data_Ga4SiO8
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.401
_cell_length_b   6.401
_cell_length_c   9.408
_cell_angle_alpha   55.031
_cell_angle_beta   55.031
_cell_angle_gamma   26.945
_symmetry_Int_Tables_number   1
_cell_volume   141.109
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.755  0.755  0.644  1.0
  Ga  Ga1  1  0.461  0.461  0.722  1.0
  Ga  Ga2  1  0.539  0.539  0.278  1.0
  Ga  Ga3  1  0.245  0.245  0.356  1.0
  Si  Si4  1  0.000  0.000  0.000  1.0
  O  O5  1  0.886  0.886  0.701  1.0
  O  O6  1  0.848  0.848  0.206  1.0
  O  O7  1  0.646  0.646  0.537  1.0
  O  O8  1  0.445  0.445  0.932  1.0
  O  O9  1  0.555  0.555  0.068  1.0
  O  O10  1  0.354  0.354  0.463  1.0
  O  O11  1  0.152  0.152  0.794  1.0
  O  O12  1  0.114  0.114  0.299  1.0
[/CIF]
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The compound described by Ga4SiO8 crystallizes in the monoclinic C2/m space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), two equivalent O(2), and three equivalent O(3) atoms to form GaO6 octahedra that share corners with two equivalent Si(1)O6 octahedra, corners with five equivalent Ga(2)O4 tetrahedra, and edges with four equivalent Ga(1)O6 octahedra. The corner-sharing octahedral tilt angles are 51°. In the second Ga site, Ga(2) is bonded to one O(3), one O(4), and two equivalent O(1) atoms to form GaO4 tetrahedra that share corners with two equivalent Si(1)O6 octahedra, corners with five equivalent Ga(1)O6 octahedra, and corners with two equivalent Ga(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 55-70°. Si(1) is bonded to two equivalent O(2) and four equivalent O(4) atoms to form SiO6 octahedra that share corners with four equivalent Ga(1)O6 octahedra, corners with four equivalent Ga(2)O4 tetrahedra, and edges with two equivalent Si(1)O6 octahedra. The corner-sharing octahedral tilt angles are 51°. There are four inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one Ga(1) and two equivalent Ga(2) atoms. In the second O site, O(2) is bonded in a trigonal planar geometry to two equivalent Ga(1) and one Si(1) atom. In the third O site, O(3) is bonded to one Ga(2) and three equivalent Ga(1) atoms to form a mixture of distorted edge and corner-sharing OGa4 tetrahedra. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Ga(2) and two equivalent Si(1) atoms. is represented by the CIF card [CIF]
data_Ga4SiO8
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.401
_cell_length_b   6.401
_cell_length_c   9.408
_cell_angle_alpha   55.031
_cell_angle_beta   55.031
_cell_angle_gamma   26.945
_symmetry_Int_Tables_number   1
_cell_volume   141.109
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.755  0.755  0.644  1.0
  Ga  Ga1  1  0.461  0.461  0.722  1.0
  Ga  Ga2  1  0.539  0.539  0.278  1.0
  Ga  Ga3  1  0.245  0.245  0.356  1.0
  Si  Si4  1  0.000  0.000  0.000  1.0
  O  O5  1  0.886  0.886  0.701  1.0
  O  O6  1  0.848  0.848  0.206  1.0
  O  O7  1  0.646  0.646  0.537  1.0
  O  O8  1  0.445  0.445  0.932  1.0
  O  O9  1  0.555  0.555  0.068  1.0
  O  O10  1  0.354  0.354  0.463  1.0
  O  O11  1  0.152  0.152  0.794  1.0
  O  O12  1  0.114  0.114  0.299  1.0
[/CIF]
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