The material structure described by Cd4Zn(GaS2)10 crystallizes in the triclinic P1 space group. There are four inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one S(13), one S(16), one S(4), and one S(6) atom to form CdS4 tetrahedra that share  a cornercorner with one Ga(7)S4 tetrahedra, corners with two equivalent Ga(1)S4 tetrahedra, corners with two equivalent Ga(3)S4 tetrahedra, and corners with three equivalent Ga(6)S4 tetrahedra. In the second Cd site, Cd(2) is bonded to one S(1), one S(12), one S(18), and one S(8) atom to form CdS4 tetrahedra that share  a cornercorner with one Ga(8)S4 tetrahedra, corners with two equivalent Ga(2)S4 tetrahedra, corners with two equivalent Ga(3)S4 tetrahedra, and corners with three equivalent Ga(7)S4 tetrahedra. In the third Cd site, Cd(3) is bonded to one S(15), one S(17), one S(3), and one S(7) atom to form CdS4 tetrahedra that share  a cornercorner with one Ga(9)S4 tetrahedra, corners with two equivalent Ga(2)S4 tetrahedra, corners with two equivalent Ga(5)S4 tetrahedra, and corners with three equivalent Ga(8)S4 tetrahedra. In the fourth Cd site, Cd(4) is bonded to one S(10), one S(14), one S(2), and one S(20) atom to form CdS4 tetrahedra that share  a cornercorner with one Ga(10)S4 tetrahedra, corners with two equivalent Ga(4)S4 tetrahedra, corners with two equivalent Ga(5)S4 tetrahedra, and corners with three equivalent Ga(9)S4 tetrahedra. Zn(1) is bonded to one S(11), one S(19), one S(5), and one S(9) atom to form ZnS4 tetrahedra that share  a cornercorner with one Ga(6)S4 tetrahedra, corners with two equivalent Ga(1)S4 tetrahedra, corners with two equivalent Ga(4)S4 tetrahedra, and corners with three equivalent Ga(10)S4 tetrahedra. There are ten inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(11), one S(16), one S(4), and one S(9) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(10)S4 tetrahedra, corners with two equivalent Cd(1)S4 tetrahedra, corners with two equivalent Zn(1)S4 tetrahedra, and corners with three equivalent Ga(6)S4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(12), one S(17), one S(3), and one S(8) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(7)S4 tetrahedra, corners with two equivalent Cd(2)S4 tetrahedra, corners with two equivalent Cd(3)S4 tetrahedra, and corners with three equivalent Ga(8)S4 tetrahedra. In the third Ga site, Ga(3) is bonded to one S(1), one S(13), one S(18), and one S(6) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(6)S4 tetrahedra, corners with two equivalent Cd(1)S4 tetrahedra, corners with two equivalent Cd(2)S4 tetrahedra, and corners with three equivalent Ga(7)S4 tetrahedra. In the fourth Ga site, Ga(4) is bonded to one S(10), one S(14), one S(19), and one S(5) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(9)S4 tetrahedra, corners with two equivalent Cd(4)S4 tetrahedra, corners with two equivalent Zn(1)S4 tetrahedra, and corners with three equivalent Ga(10)S4 tetrahedra. In the fifth Ga site, Ga(5) is bonded to one S(15), one S(2), one S(20), and one S(7) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(8)S4 tetrahedra, corners with two equivalent Cd(3)S4 tetrahedra, corners with two equivalent Cd(4)S4 tetrahedra, and corners with three equivalent Ga(9)S4 tetrahedra. In the sixth Ga site, Ga(6) is bonded to one S(11), one S(16), one S(4), and one S(6) atom to form GaS4 tetrahedra that share  a cornercorner with one Zn(1)S4 tetrahedra,  a cornercorner with one Ga(3)S4 tetrahedra, corners with three equivalent Cd(1)S4 tetrahedra, and corners with three equivalent Ga(1)S4 tetrahedra. In the seventh Ga site, Ga(7) is bonded to one S(1), one S(13), one S(18), and one S(8) atom to form GaS4 tetrahedra that share  a cornercorner with one Cd(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, corners with three equivalent Cd(2)S4 tetrahedra, and corners with three equivalent Ga(3)S4 tetrahedra. In the eighth Ga site, Ga(8) is bonded to one S(12), one S(17), one S(3), and one S(7) atom to form GaS4 tetrahedra that share  a cornercorner with one Cd(2)S4 tetrahedra,  a cornercorner with one Ga(5)S4 tetrahedra, corners with three equivalent Cd(3)S4 tetrahedra, and corners with three equivalent Ga(2)S4 tetrahedra. In the ninth Ga site, Ga(9) is bonded to one S(10), one S(15), one S(2), and one S(20) atom to form GaS4 tetrahedra that share  a cornercorner with one Cd(3)S4 tetrahedra,  a cornercorner with one Ga(4)S4 tetrahedra, corners with three equivalent Cd(4)S4 tetrahedra, and corners with three equivalent Ga(5)S4 tetrahedra. In the tenth Ga site, Ga(10) is bonded to one S(14), one S(19), one S(5), and one S(9) atom to form GaS4 tetrahedra that share  a cornercorner with one Cd(4)S4 tetrahedra,  a cornercorner with one Ga(1)S4 tetrahedra, corners with three equivalent Zn(1)S4 tetrahedra, and corners with three equivalent Ga(4)S4 tetrahedra. There are twenty inequivalent S sites. In the first S site, S(1) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(3), and one Ga(7) atom. In the second S site, S(2) is bonded in a trigonal non-coplanar geometry to one Cd(4), one Ga(5), and one Ga(9) atom. In the third S site, S(3) is bonded in a trigonal non-coplanar geometry to one Cd(3), one Ga(2), and one Ga(8) atom. In the fourth S site, S(4) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Ga(1), and one Ga(6) atom. In the fifth S site, S(5) is bonded in a trigonal non-coplanar geometry to one Zn(1), one Ga(10), and one Ga(4) atom. In the sixth S site, S(6) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Ga(3), and one Ga(6) atom. In the seventh S site, S(7) is bonded in a trigonal non-coplanar geometry to one Cd(3), one Ga(5), and one Ga(8) atom. In the eighth S site, S(8) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(2), and one Ga(7) atom. In the ninth S site, S(9) is bonded in a trigonal non-coplanar geometry to one Zn(1), one Ga(1), and one Ga(10) atom. In the tenth S site, S(10) is bonded in a trigonal non-coplanar geometry to one Cd(4), one Ga(4), and one Ga(9) atom. In the eleventh S site, S(11) is bonded in a trigonal non-coplanar geometry to one Zn(1), one Ga(1), and one Ga(6) atom. In the twelfth S site, S(12) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(2), and one Ga(8) atom. In the thirteenth S site, S(13) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Ga(3), and one Ga(7) atom. In the fourteenth S site, S(14) is bonded in a trigonal non-coplanar geometry to one Cd(4), one Ga(10), and one Ga(4) atom. In the fifteenth S site, S(15) is bonded in a trigonal non-coplanar geometry to one Cd(3), one Ga(5), and one Ga(9) atom. In the sixteenth S site, S(16) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Ga(1), and one Ga(6) atom. In the seventeenth S site, S(17) is bonded in a trigonal non-coplanar geometry to one Cd(3), one Ga(2), and one Ga(8) atom. In the eighteenth S site, S(18) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(3), and one Ga(7) atom. In the nineteenth S site, S(19) is bonded in a trigonal non-coplanar geometry to one Zn(1), one Ga(10), and one Ga(4) atom. In the twentieth S site, S(20) is bonded in a trigonal non-coplanar geometry to one Cd(4), one Ga(5), and one Ga(9) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_ZnCd4(GaS2)10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.530
_cell_length_b   6.456
_cell_length_c   24.391
_cell_angle_alpha   93.034
_cell_angle_beta   90.032
_cell_angle_gamma   115.352
_symmetry_Int_Tables_number   1
_cell_volume   785.603
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Zn  Zn0  1  0.194  0.395  0.800  1.0
  Cd  Cd1  1  0.012  0.018  0.997  1.0
  Cd  Cd2  1  0.802  0.602  0.199  1.0
  Cd  Cd3  1  0.599  0.198  0.401  1.0
  Cd  Cd4  1  0.394  0.788  0.603  1.0
  Ga  Ga5  1  0.608  0.219  0.897  1.0
  Ga  Ga6  1  0.200  0.398  0.300  1.0
  Ga  Ga7  1  0.403  0.804  0.097  1.0
  Ga  Ga8  1  0.793  0.588  0.705  1.0
  Ga  Ga9  1  0.996  0.991  0.502  1.0
  Ga  Ga10  1  0.310  0.615  0.946  1.0
  Ga  Ga11  1  0.103  0.203  0.148  1.0
  Ga  Ga12  1  0.900  0.798  0.350  1.0
  Ga  Ga13  1  0.697  0.391  0.553  1.0
  Ga  Ga14  1  0.490  0.993  0.753  1.0
  S  S15  1  0.477  0.494  0.117  1.0
  S  S16  1  0.071  0.681  0.521  1.0
  S  S17  1  0.275  0.089  0.319  1.0
  S  S18  1  0.685  0.909  0.916  1.0
  S  S19  1  0.880  0.284  0.726  1.0
  S  S20  1  0.114  0.686  0.022  1.0
  S  S21  1  0.707  0.871  0.428  1.0
  S  S22  1  0.910  0.275  0.226  1.0
  S  S23  1  0.298  0.096  0.826  1.0
  S  S24  1  0.506  0.463  0.630  1.0
  S  S25  1  0.005  0.513  0.874  1.0
  S  S26  1  0.587  0.708  0.281  1.0
  S  S27  1  0.790  0.115  0.079  1.0
  S  S28  1  0.175  0.900  0.684  1.0
  S  S29  1  0.383  0.302  0.484  1.0
  S  S30  1  0.448  0.346  0.971  1.0
  S  S31  1  0.031  0.523  0.373  1.0
  S  S32  1  0.234  0.927  0.171  1.0
  S  S33  1  0.595  0.701  0.776  1.0
  S  S34  1  0.828  0.115  0.576  1.0
[/CIF]
.
The material structure described by Cd4Zn(GaS2)10 crystallizes in the triclinic P1 space group. There are four inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one S(13), one S(16), one S(4), and one S(6) atom to form CdS4 tetrahedra that share  a cornercorner with one Ga(7)S4 tetrahedra, corners with two equivalent Ga(1)S4 tetrahedra, corners with two equivalent Ga(3)S4 tetrahedra, and corners with three equivalent Ga(6)S4 tetrahedra. In the second Cd site, Cd(2) is bonded to one S(1), one S(12), one S(18), and one S(8) atom to form CdS4 tetrahedra that share  a cornercorner with one Ga(8)S4 tetrahedra, corners with two equivalent Ga(2)S4 tetrahedra, corners with two equivalent Ga(3)S4 tetrahedra, and corners with three equivalent Ga(7)S4 tetrahedra. In the third Cd site, Cd(3) is bonded to one S(15), one S(17), one S(3), and one S(7) atom to form CdS4 tetrahedra that share  a cornercorner with one Ga(9)S4 tetrahedra, corners with two equivalent Ga(2)S4 tetrahedra, corners with two equivalent Ga(5)S4 tetrahedra, and corners with three equivalent Ga(8)S4 tetrahedra. In the fourth Cd site, Cd(4) is bonded to one S(10), one S(14), one S(2), and one S(20) atom to form CdS4 tetrahedra that share  a cornercorner with one Ga(10)S4 tetrahedra, corners with two equivalent Ga(4)S4 tetrahedra, corners with two equivalent Ga(5)S4 tetrahedra, and corners with three equivalent Ga(9)S4 tetrahedra. Zn(1) is bonded to one S(11), one S(19), one S(5), and one S(9) atom to form ZnS4 tetrahedra that share  a cornercorner with one Ga(6)S4 tetrahedra, corners with two equivalent Ga(1)S4 tetrahedra, corners with two equivalent Ga(4)S4 tetrahedra, and corners with three equivalent Ga(10)S4 tetrahedra. There are ten inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(11), one S(16), one S(4), and one S(9) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(10)S4 tetrahedra, corners with two equivalent Cd(1)S4 tetrahedra, corners with two equivalent Zn(1)S4 tetrahedra, and corners with three equivalent Ga(6)S4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(12), one S(17), one S(3), and one S(8) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(7)S4 tetrahedra, corners with two equivalent Cd(2)S4 tetrahedra, corners with two equivalent Cd(3)S4 tetrahedra, and corners with three equivalent Ga(8)S4 tetrahedra. In the third Ga site, Ga(3) is bonded to one S(1), one S(13), one S(18), and one S(6) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(6)S4 tetrahedra, corners with two equivalent Cd(1)S4 tetrahedra, corners with two equivalent Cd(2)S4 tetrahedra, and corners with three equivalent Ga(7)S4 tetrahedra. In the fourth Ga site, Ga(4) is bonded to one S(10), one S(14), one S(19), and one S(5) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(9)S4 tetrahedra, corners with two equivalent Cd(4)S4 tetrahedra, corners with two equivalent Zn(1)S4 tetrahedra, and corners with three equivalent Ga(10)S4 tetrahedra. In the fifth Ga site, Ga(5) is bonded to one S(15), one S(2), one S(20), and one S(7) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(8)S4 tetrahedra, corners with two equivalent Cd(3)S4 tetrahedra, corners with two equivalent Cd(4)S4 tetrahedra, and corners with three equivalent Ga(9)S4 tetrahedra. In the sixth Ga site, Ga(6) is bonded to one S(11), one S(16), one S(4), and one S(6) atom to form GaS4 tetrahedra that share  a cornercorner with one Zn(1)S4 tetrahedra,  a cornercorner with one Ga(3)S4 tetrahedra, corners with three equivalent Cd(1)S4 tetrahedra, and corners with three equivalent Ga(1)S4 tetrahedra. In the seventh Ga site, Ga(7) is bonded to one S(1), one S(13), one S(18), and one S(8) atom to form GaS4 tetrahedra that share  a cornercorner with one Cd(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, corners with three equivalent Cd(2)S4 tetrahedra, and corners with three equivalent Ga(3)S4 tetrahedra. In the eighth Ga site, Ga(8) is bonded to one S(12), one S(17), one S(3), and one S(7) atom to form GaS4 tetrahedra that share  a cornercorner with one Cd(2)S4 tetrahedra,  a cornercorner with one Ga(5)S4 tetrahedra, corners with three equivalent Cd(3)S4 tetrahedra, and corners with three equivalent Ga(2)S4 tetrahedra. In the ninth Ga site, Ga(9) is bonded to one S(10), one S(15), one S(2), and one S(20) atom to form GaS4 tetrahedra that share  a cornercorner with one Cd(3)S4 tetrahedra,  a cornercorner with one Ga(4)S4 tetrahedra, corners with three equivalent Cd(4)S4 tetrahedra, and corners with three equivalent Ga(5)S4 tetrahedra. In the tenth Ga site, Ga(10) is bonded to one S(14), one S(19), one S(5), and one S(9) atom to form GaS4 tetrahedra that share  a cornercorner with one Cd(4)S4 tetrahedra,  a cornercorner with one Ga(1)S4 tetrahedra, corners with three equivalent Zn(1)S4 tetrahedra, and corners with three equivalent Ga(4)S4 tetrahedra. There are twenty inequivalent S sites. In the first S site, S(1) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(3), and one Ga(7) atom. In the second S site, S(2) is bonded in a trigonal non-coplanar geometry to one Cd(4), one Ga(5), and one Ga(9) atom. In the third S site, S(3) is bonded in a trigonal non-coplanar geometry to one Cd(3), one Ga(2), and one Ga(8) atom. In the fourth S site, S(4) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Ga(1), and one Ga(6) atom. In the fifth S site, S(5) is bonded in a trigonal non-coplanar geometry to one Zn(1), one Ga(10), and one Ga(4) atom. In the sixth S site, S(6) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Ga(3), and one Ga(6) atom. In the seventh S site, S(7) is bonded in a trigonal non-coplanar geometry to one Cd(3), one Ga(5), and one Ga(8) atom. In the eighth S site, S(8) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(2), and one Ga(7) atom. In the ninth S site, S(9) is bonded in a trigonal non-coplanar geometry to one Zn(1), one Ga(1), and one Ga(10) atom. In the tenth S site, S(10) is bonded in a trigonal non-coplanar geometry to one Cd(4), one Ga(4), and one Ga(9) atom. In the eleventh S site, S(11) is bonded in a trigonal non-coplanar geometry to one Zn(1), one Ga(1), and one Ga(6) atom. In the twelfth S site, S(12) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(2), and one Ga(8) atom. In the thirteenth S site, S(13) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Ga(3), and one Ga(7) atom. In the fourteenth S site, S(14) is bonded in a trigonal non-coplanar geometry to one Cd(4), one Ga(10), and one Ga(4) atom. In the fifteenth S site, S(15) is bonded in a trigonal non-coplanar geometry to one Cd(3), one Ga(5), and one Ga(9) atom. In the sixteenth S site, S(16) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Ga(1), and one Ga(6) atom. In the seventeenth S site, S(17) is bonded in a trigonal non-coplanar geometry to one Cd(3), one Ga(2), and one Ga(8) atom. In the eighteenth S site, S(18) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(3), and one Ga(7) atom. In the nineteenth S site, S(19) is bonded in a trigonal non-coplanar geometry to one Zn(1), one Ga(10), and one Ga(4) atom. In the twentieth S site, S(20) is bonded in a trigonal non-coplanar geometry to one Cd(4), one Ga(5), and one Ga(9) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_ZnCd4(GaS2)10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.530
_cell_length_b   6.456
_cell_length_c   24.391
_cell_angle_alpha   93.034
_cell_angle_beta   90.032
_cell_angle_gamma   115.352
_symmetry_Int_Tables_number   1
_cell_volume   785.603
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Zn  Zn0  1  0.194  0.395  0.800  1.0
  Cd  Cd1  1  0.012  0.018  0.997  1.0
  Cd  Cd2  1  0.802  0.602  0.199  1.0
  Cd  Cd3  1  0.599  0.198  0.401  1.0
  Cd  Cd4  1  0.394  0.788  0.603  1.0
  Ga  Ga5  1  0.608  0.219  0.897  1.0
  Ga  Ga6  1  0.200  0.398  0.300  1.0
  Ga  Ga7  1  0.403  0.804  0.097  1.0
  Ga  Ga8  1  0.793  0.588  0.705  1.0
  Ga  Ga9  1  0.996  0.991  0.502  1.0
  Ga  Ga10  1  0.310  0.615  0.946  1.0
  Ga  Ga11  1  0.103  0.203  0.148  1.0
  Ga  Ga12  1  0.900  0.798  0.350  1.0
  Ga  Ga13  1  0.697  0.391  0.553  1.0
  Ga  Ga14  1  0.490  0.993  0.753  1.0
  S  S15  1  0.477  0.494  0.117  1.0
  S  S16  1  0.071  0.681  0.521  1.0
  S  S17  1  0.275  0.089  0.319  1.0
  S  S18  1  0.685  0.909  0.916  1.0
  S  S19  1  0.880  0.284  0.726  1.0
  S  S20  1  0.114  0.686  0.022  1.0
  S  S21  1  0.707  0.871  0.428  1.0
  S  S22  1  0.910  0.275  0.226  1.0
  S  S23  1  0.298  0.096  0.826  1.0
  S  S24  1  0.506  0.463  0.630  1.0
  S  S25  1  0.005  0.513  0.874  1.0
  S  S26  1  0.587  0.708  0.281  1.0
  S  S27  1  0.790  0.115  0.079  1.0
  S  S28  1  0.175  0.900  0.684  1.0
  S  S29  1  0.383  0.302  0.484  1.0
  S  S30  1  0.448  0.346  0.971  1.0
  S  S31  1  0.031  0.523  0.373  1.0
  S  S32  1  0.234  0.927  0.171  1.0
  S  S33  1  0.595  0.701  0.776  1.0
  S  S34  1  0.828  0.115  0.576  1.0
[/CIF]
.