The crystal structure described by VCoSi is Hexagonal Laves-derived structured and crystallizes in the orthorhombic Amm2 space group. There are five inequivalent V sites. In the first V site, V(1) is bonded in a 16-coordinate geometry to one V(1), three equivalent V(2), three equivalent Co(1), four equivalent Co(2), one Si(3), two equivalent Si(1), and two equivalent Si(2) atoms. In the second V site, V(2) is bonded in a 16-coordinate geometry to one V(2); three V(1,1); two equivalent Co(2); three equivalent Co(1); one Si(1); two equivalent Si(3); and four equivalent Si(2) atoms. In the third V site, V(2) is bonded in a 16-coordinate geometry to one V(2); three V(1,1); two equivalent Co(2); three equivalent Co(1); one Si(1); two equivalent Si(3); and four equivalent Si(2) atoms. In the fourth V site, V(1) is bonded in a 16-coordinate geometry to one V(1); three V(2,2); three equivalent Co(1); four equivalent Co(2); one Si(3); two equivalent Si(1); and two equivalent Si(2) atoms. In the fifth V site, V(2) is bonded in a 16-coordinate geometry to one V(2); three V(1,1); two equivalent Co(2); three equivalent Co(1); one Si(1); two equivalent Si(3); and four equivalent Si(2) atoms. There are two inequivalent Co sites. In the first Co site, Co(1) is bonded to three V(1,1); three equivalent V(2); two equivalent Co(2); one Si(1); one Si(3); and two equivalent Si(2) atoms to form CoV6Co2Si4 cuboctahedra that share corners with two equivalent Si(3)V6Co2Si4 cuboctahedra, corners with two equivalent Si(1)V6Co6 cuboctahedra, corners with four equivalent Co(2)V6Co4Si2 cuboctahedra, corners with four equivalent Si(2)V6Co2Si4 cuboctahedra, edges with six equivalent Co(1)V6Co2Si4 cuboctahedra, faces with two equivalent Co(1)V6Co2Si4 cuboctahedra, faces with three equivalent Si(3)V6Co2Si4 cuboctahedra, faces with three equivalent Si(1)V6Co6 cuboctahedra, faces with six equivalent Co(2)V6Co4Si2 cuboctahedra, and faces with six equivalent Si(2)V6Co2Si4 cuboctahedra. In the second Co site, Co(2) is bonded to two V(2,2); four V(1,1); two equivalent Co(1); two equivalent Co(2); and two equivalent Si(1) atoms to form CoV6Co4Si2 cuboctahedra that share corners with four equivalent Co(1)V6Co2Si4 cuboctahedra, corners with four equivalent Co(2)V6Co4Si2 cuboctahedra, corners with four equivalent Si(3)V6Co2Si4 cuboctahedra, corners with six equivalent Si(2)V6Co2Si4 cuboctahedra, edges with two equivalent Co(2)V6Co4Si2 cuboctahedra, edges with four equivalent Si(2)V6Co2Si4 cuboctahedra, faces with two equivalent Si(2)V6Co2Si4 cuboctahedra, faces with two equivalent Si(3)V6Co2Si4 cuboctahedra, faces with four equivalent Co(2)V6Co4Si2 cuboctahedra, faces with four equivalent Si(1)V6Co6 cuboctahedra, and faces with six equivalent Co(1)V6Co2Si4 cuboctahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to two V(2,2); four V(1,1); two equivalent Co(1); and four equivalent Co(2) atoms to form SiV6Co6 cuboctahedra that share corners with two equivalent Si(3)V6Co2Si4 cuboctahedra, corners with four equivalent Co(1)V6Co2Si4 cuboctahedra, corners with four equivalent Si(1)V6Co6 cuboctahedra, corners with eight equivalent Si(2)V6Co2Si4 cuboctahedra, edges with two equivalent Si(1)V6Co6 cuboctahedra, edges with four equivalent Si(3)V6Co2Si4 cuboctahedra, faces with four equivalent Si(2)V6Co2Si4 cuboctahedra, faces with six equivalent Co(1)V6Co2Si4 cuboctahedra, and faces with eight equivalent Co(2)V6Co4Si2 cuboctahedra. In the second Si site, Si(2) is bonded to two V(1,1); four V(2,2,2); two equivalent Co(1); two equivalent Si(2); and two equivalent Si(3) atoms to form SiV6Co2Si4 cuboctahedra that share corners with four equivalent Co(1)V6Co2Si4 cuboctahedra, corners with four equivalent Si(2)V6Co2Si4 cuboctahedra, corners with four equivalent Si(1)V6Co6 cuboctahedra, corners with six equivalent Co(2)V6Co4Si2 cuboctahedra, edges with two equivalent Si(2)V6Co2Si4 cuboctahedra, edges with four equivalent Co(2)V6Co4Si2 cuboctahedra, faces with two equivalent Co(2)V6Co4Si2 cuboctahedra, faces with two equivalent Si(1)V6Co6 cuboctahedra, faces with four equivalent Si(2)V6Co2Si4 cuboctahedra, faces with four equivalent Si(3)V6Co2Si4 cuboctahedra, and faces with six equivalent Co(1)V6Co2Si4 cuboctahedra. In the third Si site, Si(3) is bonded to two V(1,1); four V(2,2); two equivalent Co(1); and four equivalent Si(2) atoms to form SiV6Co2Si4 cuboctahedra that share corners with two equivalent Si(1)V6Co6 cuboctahedra, corners with four equivalent Co(1)V6Co2Si4 cuboctahedra, corners with four equivalent Si(3)V6Co2Si4 cuboctahedra, corners with eight equivalent Co(2)V6Co4Si2 cuboctahedra, edges with two equivalent Si(3)V6Co2Si4 cuboctahedra, edges with four equivalent Si(1)V6Co6 cuboctahedra, faces with four equivalent Co(2)V6Co4Si2 cuboctahedra, faces with six equivalent Co(1)V6Co2Si4 cuboctahedra, and faces with eight equivalent Si(2)V6Co2Si4 cuboctahedra. is represented by the CIF file [CIF]
data_VCoSi
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.688
_cell_length_b   4.688
_cell_length_c   7.347
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   118.925
_symmetry_Int_Tables_number   1
_cell_volume   141.316
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.333  0.667  0.185  1.0
  V  V1  1  0.665  0.335  0.319  1.0
  V  V2  1  0.665  0.335  0.681  1.0
  V  V3  1  0.333  0.667  0.815  1.0
  Co  Co4  1  0.998  0.002  0.258  1.0
  Co  Co5  1  0.998  0.002  0.742  1.0
  Co  Co6  1  0.833  0.656  0.000  1.0
  Co  Co7  1  0.344  0.167  0.000  1.0
  Si  Si8  1  0.832  0.168  0.000  1.0
  Si  Si9  1  0.171  0.341  0.500  1.0
  Si  Si10  1  0.659  0.829  0.500  1.0
  Si  Si11  1  0.170  0.830  0.500  1.0
[/CIF]
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The crystal structure described by VCoSi is Hexagonal Laves-derived structured and crystallizes in the orthorhombic Amm2 space group. There are five inequivalent V sites. In the first V site, V(1) is bonded in a 16-coordinate geometry to one V(1), three equivalent V(2), three equivalent Co(1), four equivalent Co(2), one Si(3), two equivalent Si(1), and two equivalent Si(2) atoms. In the second V site, V(2) is bonded in a 16-coordinate geometry to one V(2); three V(1,1); two equivalent Co(2); three equivalent Co(1); one Si(1); two equivalent Si(3); and four equivalent Si(2) atoms. In the third V site, V(2) is bonded in a 16-coordinate geometry to one V(2); three V(1,1); two equivalent Co(2); three equivalent Co(1); one Si(1); two equivalent Si(3); and four equivalent Si(2) atoms. In the fourth V site, V(1) is bonded in a 16-coordinate geometry to one V(1); three V(2,2); three equivalent Co(1); four equivalent Co(2); one Si(3); two equivalent Si(1); and two equivalent Si(2) atoms. In the fifth V site, V(2) is bonded in a 16-coordinate geometry to one V(2); three V(1,1); two equivalent Co(2); three equivalent Co(1); one Si(1); two equivalent Si(3); and four equivalent Si(2) atoms. There are two inequivalent Co sites. In the first Co site, Co(1) is bonded to three V(1,1); three equivalent V(2); two equivalent Co(2); one Si(1); one Si(3); and two equivalent Si(2) atoms to form CoV6Co2Si4 cuboctahedra that share corners with two equivalent Si(3)V6Co2Si4 cuboctahedra, corners with two equivalent Si(1)V6Co6 cuboctahedra, corners with four equivalent Co(2)V6Co4Si2 cuboctahedra, corners with four equivalent Si(2)V6Co2Si4 cuboctahedra, edges with six equivalent Co(1)V6Co2Si4 cuboctahedra, faces with two equivalent Co(1)V6Co2Si4 cuboctahedra, faces with three equivalent Si(3)V6Co2Si4 cuboctahedra, faces with three equivalent Si(1)V6Co6 cuboctahedra, faces with six equivalent Co(2)V6Co4Si2 cuboctahedra, and faces with six equivalent Si(2)V6Co2Si4 cuboctahedra. In the second Co site, Co(2) is bonded to two V(2,2); four V(1,1); two equivalent Co(1); two equivalent Co(2); and two equivalent Si(1) atoms to form CoV6Co4Si2 cuboctahedra that share corners with four equivalent Co(1)V6Co2Si4 cuboctahedra, corners with four equivalent Co(2)V6Co4Si2 cuboctahedra, corners with four equivalent Si(3)V6Co2Si4 cuboctahedra, corners with six equivalent Si(2)V6Co2Si4 cuboctahedra, edges with two equivalent Co(2)V6Co4Si2 cuboctahedra, edges with four equivalent Si(2)V6Co2Si4 cuboctahedra, faces with two equivalent Si(2)V6Co2Si4 cuboctahedra, faces with two equivalent Si(3)V6Co2Si4 cuboctahedra, faces with four equivalent Co(2)V6Co4Si2 cuboctahedra, faces with four equivalent Si(1)V6Co6 cuboctahedra, and faces with six equivalent Co(1)V6Co2Si4 cuboctahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to two V(2,2); four V(1,1); two equivalent Co(1); and four equivalent Co(2) atoms to form SiV6Co6 cuboctahedra that share corners with two equivalent Si(3)V6Co2Si4 cuboctahedra, corners with four equivalent Co(1)V6Co2Si4 cuboctahedra, corners with four equivalent Si(1)V6Co6 cuboctahedra, corners with eight equivalent Si(2)V6Co2Si4 cuboctahedra, edges with two equivalent Si(1)V6Co6 cuboctahedra, edges with four equivalent Si(3)V6Co2Si4 cuboctahedra, faces with four equivalent Si(2)V6Co2Si4 cuboctahedra, faces with six equivalent Co(1)V6Co2Si4 cuboctahedra, and faces with eight equivalent Co(2)V6Co4Si2 cuboctahedra. In the second Si site, Si(2) is bonded to two V(1,1); four V(2,2,2); two equivalent Co(1); two equivalent Si(2); and two equivalent Si(3) atoms to form SiV6Co2Si4 cuboctahedra that share corners with four equivalent Co(1)V6Co2Si4 cuboctahedra, corners with four equivalent Si(2)V6Co2Si4 cuboctahedra, corners with four equivalent Si(1)V6Co6 cuboctahedra, corners with six equivalent Co(2)V6Co4Si2 cuboctahedra, edges with two equivalent Si(2)V6Co2Si4 cuboctahedra, edges with four equivalent Co(2)V6Co4Si2 cuboctahedra, faces with two equivalent Co(2)V6Co4Si2 cuboctahedra, faces with two equivalent Si(1)V6Co6 cuboctahedra, faces with four equivalent Si(2)V6Co2Si4 cuboctahedra, faces with four equivalent Si(3)V6Co2Si4 cuboctahedra, and faces with six equivalent Co(1)V6Co2Si4 cuboctahedra. In the third Si site, Si(3) is bonded to two V(1,1); four V(2,2); two equivalent Co(1); and four equivalent Si(2) atoms to form SiV6Co2Si4 cuboctahedra that share corners with two equivalent Si(1)V6Co6 cuboctahedra, corners with four equivalent Co(1)V6Co2Si4 cuboctahedra, corners with four equivalent Si(3)V6Co2Si4 cuboctahedra, corners with eight equivalent Co(2)V6Co4Si2 cuboctahedra, edges with two equivalent Si(3)V6Co2Si4 cuboctahedra, edges with four equivalent Si(1)V6Co6 cuboctahedra, faces with four equivalent Co(2)V6Co4Si2 cuboctahedra, faces with six equivalent Co(1)V6Co2Si4 cuboctahedra, and faces with eight equivalent Si(2)V6Co2Si4 cuboctahedra. is represented by the CIF file [CIF]
data_VCoSi
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.688
_cell_length_b   4.688
_cell_length_c   7.347
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   118.925
_symmetry_Int_Tables_number   1
_cell_volume   141.316
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.333  0.667  0.185  1.0
  V  V1  1  0.665  0.335  0.319  1.0
  V  V2  1  0.665  0.335  0.681  1.0
  V  V3  1  0.333  0.667  0.815  1.0
  Co  Co4  1  0.998  0.002  0.258  1.0
  Co  Co5  1  0.998  0.002  0.742  1.0
  Co  Co6  1  0.833  0.656  0.000  1.0
  Co  Co7  1  0.344  0.167  0.000  1.0
  Si  Si8  1  0.832  0.168  0.000  1.0
  Si  Si9  1  0.171  0.341  0.500  1.0
  Si  Si10  1  0.659  0.829  0.500  1.0
  Si  Si11  1  0.170  0.830  0.500  1.0
[/CIF]
.