The compound described by Gd2GaSbO7 crystallizes in the orthorhombic Imma space group. There are two inequivalent Gd sites. In the first Gd site, Gd(1) is bonded to two equivalent O(2), two equivalent O(4), and four equivalent O(3) atoms to form distorted GdO8 hexagonal bipyramids that share edges with two equivalent Gd(1)O8 hexagonal bipyramids, edges with two equivalent Ga(1)O6 octahedra, and edges with four equivalent Sb(1)O6 octahedra. In the second Gd site, Gd(2) is bonded in a distorted body-centered cubic geometry to two equivalent O(1), two equivalent O(4), and four equivalent O(3) atoms. Ga(1) is bonded to two equivalent O(1) and four equivalent O(3) atoms to form GaO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with four equivalent Sb(1)O6 octahedra, and edges with two equivalent Gd(1)O8 hexagonal bipyramids. The corner-sharing octahedral tilt angles are 50°. Sb(1) is bonded to two equivalent O(2) and four equivalent O(3) atoms to form SbO6 octahedra that share corners with two equivalent Sb(1)O6 octahedra, corners with four equivalent Ga(1)O6 octahedra, and edges with four equivalent Gd(1)O8 hexagonal bipyramids. The corner-sharing octahedral tilt angles range from 49-50°. There are four inequivalent O sites. In the first O site, O(1) is bonded to two equivalent Gd(2) and two equivalent Ga(1) atoms to form distorted OGd2Ga2 tetrahedra that share corners with two equivalent O(4)Gd4 tetrahedra, corners with four equivalent O(1)Gd2Ga2 tetrahedra, corners with eight equivalent O(3)Gd2GaSb tetrahedra,  an edgeedge with one O(4)Gd4 tetrahedra, and edges with four equivalent O(3)Gd2GaSb tetrahedra. In the second O site, O(2) is bonded to two equivalent Gd(1) and two equivalent Sb(1) atoms to form distorted OGd2Sb2 tetrahedra that share corners with two equivalent O(4)Gd4 tetrahedra, corners with four equivalent O(2)Gd2Sb2 tetrahedra, corners with eight equivalent O(3)Gd2GaSb tetrahedra,  an edgeedge with one O(4)Gd4 tetrahedra, and edges with four equivalent O(3)Gd2GaSb tetrahedra. In the third O site, O(3) is bonded to one Gd(1), one Gd(2), one Ga(1), and one Sb(1) atom to form distorted OGd2GaSb tetrahedra that share corners with two equivalent O(1)Gd2Ga2 tetrahedra, corners with two equivalent O(2)Gd2Sb2 tetrahedra, corners with two equivalent O(4)Gd4 tetrahedra, corners with eight equivalent O(3)Gd2GaSb tetrahedra,  an edgeedge with one O(1)Gd2Ga2 tetrahedra,  an edgeedge with one O(2)Gd2Sb2 tetrahedra,  an edgeedge with one O(4)Gd4 tetrahedra, and edges with two equivalent O(3)Gd2GaSb tetrahedra. In the fourth O site, O(4) is bonded to two equivalent Gd(1) and two equivalent Gd(2) atoms to form OGd4 tetrahedra that share corners with two equivalent O(1)Gd2Ga2 tetrahedra, corners with two equivalent O(2)Gd2Sb2 tetrahedra, corners with four equivalent O(4)Gd4 tetrahedra, corners with eight equivalent O(3)Gd2GaSb tetrahedra,  an edgeedge with one O(1)Gd2Ga2 tetrahedra,  an edgeedge with one O(2)Gd2Sb2 tetrahedra, and edges with four equivalent O(3)Gd2GaSb tetrahedra. is represented by the CIF card [CIF]
data_Gd2GaSbO7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.335
_cell_length_b   7.335
_cell_length_c   7.335
_cell_angle_alpha   120.527
_cell_angle_beta   119.446
_cell_angle_gamma   90.026
_symmetry_Int_Tables_number   1
_cell_volume   279.052
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Gd  Gd0  1  0.500  0.000  0.000  1.0
  Gd  Gd1  1  0.500  0.500  0.500  1.0
  Gd  Gd2  1  0.500  0.000  0.500  1.0
  Gd  Gd3  1  0.000  0.000  0.000  1.0
  Ga  Ga4  1  0.000  0.500  0.000  1.0
  Ga  Ga5  1  0.000  0.000  0.500  1.0
  Sb  Sb6  1  0.000  0.500  0.500  1.0
  Sb  Sb7  1  0.500  0.500  0.000  1.0
  O  O8  1  0.918  0.168  0.750  1.0
  O  O9  1  0.332  0.582  0.750  1.0
  O  O10  1  0.916  0.580  0.745  1.0
  O  O11  1  0.334  0.171  0.755  1.0
  O  O12  1  0.916  0.171  0.336  1.0
  O  O13  1  0.334  0.580  0.164  1.0
  O  O14  1  0.082  0.832  0.250  1.0
  O  O15  1  0.668  0.418  0.250  1.0
  O  O16  1  0.084  0.420  0.255  1.0
  O  O17  1  0.666  0.829  0.245  1.0
  O  O18  1  0.084  0.829  0.664  1.0
  O  O19  1  0.666  0.420  0.836  1.0
  O  O20  1  0.624  0.874  0.750  1.0
  O  O21  1  0.376  0.126  0.250  1.0
[/CIF]
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The compound described by Gd2GaSbO7 crystallizes in the orthorhombic Imma space group. There are two inequivalent Gd sites. In the first Gd site, Gd(1) is bonded to two equivalent O(2), two equivalent O(4), and four equivalent O(3) atoms to form distorted GdO8 hexagonal bipyramids that share edges with two equivalent Gd(1)O8 hexagonal bipyramids, edges with two equivalent Ga(1)O6 octahedra, and edges with four equivalent Sb(1)O6 octahedra. In the second Gd site, Gd(2) is bonded in a distorted body-centered cubic geometry to two equivalent O(1), two equivalent O(4), and four equivalent O(3) atoms. Ga(1) is bonded to two equivalent O(1) and four equivalent O(3) atoms to form GaO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with four equivalent Sb(1)O6 octahedra, and edges with two equivalent Gd(1)O8 hexagonal bipyramids. The corner-sharing octahedral tilt angles are 50°. Sb(1) is bonded to two equivalent O(2) and four equivalent O(3) atoms to form SbO6 octahedra that share corners with two equivalent Sb(1)O6 octahedra, corners with four equivalent Ga(1)O6 octahedra, and edges with four equivalent Gd(1)O8 hexagonal bipyramids. The corner-sharing octahedral tilt angles range from 49-50°. There are four inequivalent O sites. In the first O site, O(1) is bonded to two equivalent Gd(2) and two equivalent Ga(1) atoms to form distorted OGd2Ga2 tetrahedra that share corners with two equivalent O(4)Gd4 tetrahedra, corners with four equivalent O(1)Gd2Ga2 tetrahedra, corners with eight equivalent O(3)Gd2GaSb tetrahedra,  an edgeedge with one O(4)Gd4 tetrahedra, and edges with four equivalent O(3)Gd2GaSb tetrahedra. In the second O site, O(2) is bonded to two equivalent Gd(1) and two equivalent Sb(1) atoms to form distorted OGd2Sb2 tetrahedra that share corners with two equivalent O(4)Gd4 tetrahedra, corners with four equivalent O(2)Gd2Sb2 tetrahedra, corners with eight equivalent O(3)Gd2GaSb tetrahedra,  an edgeedge with one O(4)Gd4 tetrahedra, and edges with four equivalent O(3)Gd2GaSb tetrahedra. In the third O site, O(3) is bonded to one Gd(1), one Gd(2), one Ga(1), and one Sb(1) atom to form distorted OGd2GaSb tetrahedra that share corners with two equivalent O(1)Gd2Ga2 tetrahedra, corners with two equivalent O(2)Gd2Sb2 tetrahedra, corners with two equivalent O(4)Gd4 tetrahedra, corners with eight equivalent O(3)Gd2GaSb tetrahedra,  an edgeedge with one O(1)Gd2Ga2 tetrahedra,  an edgeedge with one O(2)Gd2Sb2 tetrahedra,  an edgeedge with one O(4)Gd4 tetrahedra, and edges with two equivalent O(3)Gd2GaSb tetrahedra. In the fourth O site, O(4) is bonded to two equivalent Gd(1) and two equivalent Gd(2) atoms to form OGd4 tetrahedra that share corners with two equivalent O(1)Gd2Ga2 tetrahedra, corners with two equivalent O(2)Gd2Sb2 tetrahedra, corners with four equivalent O(4)Gd4 tetrahedra, corners with eight equivalent O(3)Gd2GaSb tetrahedra,  an edgeedge with one O(1)Gd2Ga2 tetrahedra,  an edgeedge with one O(2)Gd2Sb2 tetrahedra, and edges with four equivalent O(3)Gd2GaSb tetrahedra. is represented by the CIF card [CIF]
data_Gd2GaSbO7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.335
_cell_length_b   7.335
_cell_length_c   7.335
_cell_angle_alpha   120.527
_cell_angle_beta   119.446
_cell_angle_gamma   90.026
_symmetry_Int_Tables_number   1
_cell_volume   279.052
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Gd  Gd0  1  0.500  0.000  0.000  1.0
  Gd  Gd1  1  0.500  0.500  0.500  1.0
  Gd  Gd2  1  0.500  0.000  0.500  1.0
  Gd  Gd3  1  0.000  0.000  0.000  1.0
  Ga  Ga4  1  0.000  0.500  0.000  1.0
  Ga  Ga5  1  0.000  0.000  0.500  1.0
  Sb  Sb6  1  0.000  0.500  0.500  1.0
  Sb  Sb7  1  0.500  0.500  0.000  1.0
  O  O8  1  0.918  0.168  0.750  1.0
  O  O9  1  0.332  0.582  0.750  1.0
  O  O10  1  0.916  0.580  0.745  1.0
  O  O11  1  0.334  0.171  0.755  1.0
  O  O12  1  0.916  0.171  0.336  1.0
  O  O13  1  0.334  0.580  0.164  1.0
  O  O14  1  0.082  0.832  0.250  1.0
  O  O15  1  0.668  0.418  0.250  1.0
  O  O16  1  0.084  0.420  0.255  1.0
  O  O17  1  0.666  0.829  0.245  1.0
  O  O18  1  0.084  0.829  0.664  1.0
  O  O19  1  0.666  0.420  0.836  1.0
  O  O20  1  0.624  0.874  0.750  1.0
  O  O21  1  0.376  0.126  0.250  1.0
[/CIF]
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