The material structure described by Si3O crystallizes in the monoclinic C2/c space group. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a single-bond geometry to two equivalent Si(3) and one O(1) atom. In the second Si site, Si(2) is bonded in a single-bond geometry to two equivalent Si(3) and one O(2) atom. In the third Si site, Si(3) is bonded to two equivalent Si(1) and two equivalent Si(2) atoms to form corner-sharing SiSi4 tetrahedra. There are two inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to two equivalent Si(1) atoms. In the second O site, O(2) is bonded in a linear geometry to two equivalent Si(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si3O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.159
_cell_length_b   9.159
_cell_length_c   8.413
_cell_angle_alpha   81.823
_cell_angle_beta   81.823
_cell_angle_gamma   26.610
_symmetry_Int_Tables_number   1
_cell_volume   312.714
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.262  0.133  0.516  1.0
  Si  Si1  1  0.738  0.867  0.484  1.0
  Si  Si2  1  0.463  0.436  0.179  1.0
  Si  Si3  1  0.115  0.132  0.788  1.0
  Si  Si4  1  0.885  0.868  0.212  1.0
  Si  Si5  1  0.132  0.115  0.288  1.0
  Si  Si6  1  0.868  0.885  0.712  1.0
  Si  Si7  1  0.564  0.537  0.321  1.0
  Si  Si8  1  0.537  0.564  0.821  1.0
  Si  Si9  1  0.867  0.738  0.984  1.0
  Si  Si10  1  0.436  0.463  0.679  1.0
  Si  Si11  1  0.133  0.262  0.016  1.0
  O  O12  1  0.000  0.500  0.500  1.0
  O  O13  1  0.500  0.500  0.500  1.0
  O  O14  1  0.500  0.500  0.000  1.0
  O  O15  1  0.500  0.000  0.000  1.0
[/CIF]
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The material structure described by Si3O crystallizes in the monoclinic C2/c space group. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a single-bond geometry to two equivalent Si(3) and one O(1) atom. In the second Si site, Si(2) is bonded in a single-bond geometry to two equivalent Si(3) and one O(2) atom. In the third Si site, Si(3) is bonded to two equivalent Si(1) and two equivalent Si(2) atoms to form corner-sharing SiSi4 tetrahedra. There are two inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to two equivalent Si(1) atoms. In the second O site, O(2) is bonded in a linear geometry to two equivalent Si(2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si3O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.159
_cell_length_b   9.159
_cell_length_c   8.413
_cell_angle_alpha   81.823
_cell_angle_beta   81.823
_cell_angle_gamma   26.610
_symmetry_Int_Tables_number   1
_cell_volume   312.714
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.262  0.133  0.516  1.0
  Si  Si1  1  0.738  0.867  0.484  1.0
  Si  Si2  1  0.463  0.436  0.179  1.0
  Si  Si3  1  0.115  0.132  0.788  1.0
  Si  Si4  1  0.885  0.868  0.212  1.0
  Si  Si5  1  0.132  0.115  0.288  1.0
  Si  Si6  1  0.868  0.885  0.712  1.0
  Si  Si7  1  0.564  0.537  0.321  1.0
  Si  Si8  1  0.537  0.564  0.821  1.0
  Si  Si9  1  0.867  0.738  0.984  1.0
  Si  Si10  1  0.436  0.463  0.679  1.0
  Si  Si11  1  0.133  0.262  0.016  1.0
  O  O12  1  0.000  0.500  0.500  1.0
  O  O13  1  0.500  0.500  0.500  1.0
  O  O14  1  0.500  0.500  0.000  1.0
  O  O15  1  0.500  0.000  0.000  1.0
[/CIF]
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