The material described by Ge2N2O is beta indium sulfide-derived structured and crystallizes in the trigonal P-3m1 space group. There are six inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to one N(1) and three equivalent N(3) atoms to form GeN4 tetrahedra that share corners with three equivalent Ge(6)N6 octahedra and corners with nine equivalent Ge(4)N4O2 octahedra. The corner-sharing octahedral tilt angles range from 56-58°. In the second Ge site, Ge(2) is bonded to three equivalent N(2) and three equivalent O(1) atoms to form GeN3O3 octahedra that share corners with three equivalent Ge(5)N4 tetrahedra, edges with three equivalent Ge(3)N4O2 octahedra, and edges with three equivalent Ge(4)N4O2 octahedra. In the third Ge site, Ge(3) is bonded to four equivalent N(2) and two equivalent O(2) atoms to form GeN4O2 octahedra that share corners with four equivalent Ge(5)N4 tetrahedra, edges with two equivalent Ge(2)N3O3 octahedra, and edges with four equivalent Ge(3)N4O2 octahedra. In the fourth Ge site, Ge(4) is bonded to one N(1), one N(4), two equivalent N(3), and two equivalent O(1) atoms to form GeN4O2 octahedra that share  a cornercorner with one Ge(5)N4 tetrahedra, corners with three equivalent Ge(1)N4 tetrahedra,  an edgeedge with one Ge(2)N3O3 octahedra,  an edgeedge with one Ge(6)N6 octahedra, and edges with four equivalent Ge(4)N4O2 octahedra. In the fifth Ge site, Ge(5) is bonded to one N(4) and three equivalent N(2) atoms to form GeN4 tetrahedra that share corners with three equivalent Ge(2)N3O3 octahedra, corners with three equivalent Ge(4)N4O2 octahedra, and corners with six equivalent Ge(3)N4O2 octahedra. The corner-sharing octahedral tilt angles range from 57-58°. In the sixth Ge site, Ge(6) is bonded to six equivalent N(3) atoms to form GeN6 octahedra that share corners with six equivalent Ge(1)N4 tetrahedra and edges with six equivalent Ge(4)N4O2 octahedra. There are four inequivalent N sites. In the first N site, N(1) is bonded in a distorted rectangular see-saw-like geometry to one Ge(1) and three equivalent Ge(4) atoms. In the second N site, N(2) is bonded in a distorted rectangular see-saw-like geometry to one Ge(2), one Ge(5), and two equivalent Ge(3) atoms. In the third N site, N(3) is bonded to one Ge(1), one Ge(6), and two equivalent Ge(4) atoms to form a mixture of distorted edge and corner-sharing NGe4 trigonal pyramids. In the fourth N site, N(4) is bonded to one Ge(5) and three equivalent Ge(4) atoms to form distorted edge-sharing NGe4 trigonal pyramids. There are two inequivalent O sites. In the first O site, O(1) is bonded in a distorted T-shaped geometry to one Ge(2) and two equivalent Ge(4) atoms. In the second O site, O(2) is bonded in a distorted trigonal non-coplanar geometry to three equivalent Ge(3) atoms. is represented by the CIF file [CIF]
data_Ge2N2O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.863
_cell_length_b   5.863
_cell_length_c   14.379
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   428.075
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ge  Ge0  1  0.667  0.333  0.955  1.0
  Ge  Ge1  1  0.667  0.333  0.331  1.0
  Ge  Ge2  1  0.500  0.000  0.500  1.0
  Ge  Ge3  1  0.832  0.168  0.165  1.0
  Ge  Ge4  1  0.663  0.832  0.835  1.0
  Ge  Ge5  1  0.168  0.337  0.835  1.0
  Ge  Ge6  1  0.000  0.000  0.629  1.0
  Ge  Ge7  1  0.500  0.500  0.500  1.0
  Ge  Ge8  1  0.000  0.000  0.371  1.0
  Ge  Ge9  1  0.000  0.000  0.000  1.0
  Ge  Ge10  1  0.337  0.168  0.165  1.0
  Ge  Ge11  1  0.832  0.663  0.165  1.0
  Ge  Ge12  1  0.168  0.832  0.835  1.0
  Ge  Ge13  1  0.000  0.500  0.500  1.0
  Ge  Ge14  1  0.333  0.667  0.669  1.0
  Ge  Ge15  1  0.333  0.667  0.045  1.0
  N  N16  1  0.667  0.333  0.087  1.0
  N  N17  1  0.823  0.177  0.417  1.0
  N  N18  1  0.844  0.156  0.913  1.0
  N  N19  1  0.177  0.355  0.583  1.0
  N  N20  1  0.645  0.823  0.583  1.0
  N  N21  1  0.688  0.844  0.087  1.0
  N  N22  1  0.156  0.312  0.087  1.0
  N  N23  1  0.000  0.000  0.761  1.0
  N  N24  1  0.000  0.000  0.239  1.0
  N  N25  1  0.844  0.688  0.913  1.0
  N  N26  1  0.312  0.156  0.913  1.0
  N  N27  1  0.823  0.645  0.417  1.0
  N  N28  1  0.355  0.177  0.417  1.0
  N  N29  1  0.156  0.844  0.087  1.0
  N  N30  1  0.177  0.823  0.583  1.0
  N  N31  1  0.333  0.667  0.913  1.0
  O  O32  1  0.521  0.479  0.242  1.0
  O  O33  1  0.667  0.333  0.564  1.0
  O  O34  1  0.958  0.479  0.242  1.0
  O  O35  1  0.521  0.042  0.242  1.0
  O  O36  1  0.042  0.521  0.758  1.0
  O  O37  1  0.479  0.958  0.758  1.0
  O  O38  1  0.333  0.667  0.436  1.0
  O  O39  1  0.479  0.521  0.758  1.0
[/CIF]
.
The material described by Ge2N2O is beta indium sulfide-derived structured and crystallizes in the trigonal P-3m1 space group. There are six inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to one N(1) and three equivalent N(3) atoms to form GeN4 tetrahedra that share corners with three equivalent Ge(6)N6 octahedra and corners with nine equivalent Ge(4)N4O2 octahedra. The corner-sharing octahedral tilt angles range from 56-58°. In the second Ge site, Ge(2) is bonded to three equivalent N(2) and three equivalent O(1) atoms to form GeN3O3 octahedra that share corners with three equivalent Ge(5)N4 tetrahedra, edges with three equivalent Ge(3)N4O2 octahedra, and edges with three equivalent Ge(4)N4O2 octahedra. In the third Ge site, Ge(3) is bonded to four equivalent N(2) and two equivalent O(2) atoms to form GeN4O2 octahedra that share corners with four equivalent Ge(5)N4 tetrahedra, edges with two equivalent Ge(2)N3O3 octahedra, and edges with four equivalent Ge(3)N4O2 octahedra. In the fourth Ge site, Ge(4) is bonded to one N(1), one N(4), two equivalent N(3), and two equivalent O(1) atoms to form GeN4O2 octahedra that share  a cornercorner with one Ge(5)N4 tetrahedra, corners with three equivalent Ge(1)N4 tetrahedra,  an edgeedge with one Ge(2)N3O3 octahedra,  an edgeedge with one Ge(6)N6 octahedra, and edges with four equivalent Ge(4)N4O2 octahedra. In the fifth Ge site, Ge(5) is bonded to one N(4) and three equivalent N(2) atoms to form GeN4 tetrahedra that share corners with three equivalent Ge(2)N3O3 octahedra, corners with three equivalent Ge(4)N4O2 octahedra, and corners with six equivalent Ge(3)N4O2 octahedra. The corner-sharing octahedral tilt angles range from 57-58°. In the sixth Ge site, Ge(6) is bonded to six equivalent N(3) atoms to form GeN6 octahedra that share corners with six equivalent Ge(1)N4 tetrahedra and edges with six equivalent Ge(4)N4O2 octahedra. There are four inequivalent N sites. In the first N site, N(1) is bonded in a distorted rectangular see-saw-like geometry to one Ge(1) and three equivalent Ge(4) atoms. In the second N site, N(2) is bonded in a distorted rectangular see-saw-like geometry to one Ge(2), one Ge(5), and two equivalent Ge(3) atoms. In the third N site, N(3) is bonded to one Ge(1), one Ge(6), and two equivalent Ge(4) atoms to form a mixture of distorted edge and corner-sharing NGe4 trigonal pyramids. In the fourth N site, N(4) is bonded to one Ge(5) and three equivalent Ge(4) atoms to form distorted edge-sharing NGe4 trigonal pyramids. There are two inequivalent O sites. In the first O site, O(1) is bonded in a distorted T-shaped geometry to one Ge(2) and two equivalent Ge(4) atoms. In the second O site, O(2) is bonded in a distorted trigonal non-coplanar geometry to three equivalent Ge(3) atoms. is represented by the CIF file [CIF]
data_Ge2N2O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.863
_cell_length_b   5.863
_cell_length_c   14.379
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   428.075
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ge  Ge0  1  0.667  0.333  0.955  1.0
  Ge  Ge1  1  0.667  0.333  0.331  1.0
  Ge  Ge2  1  0.500  0.000  0.500  1.0
  Ge  Ge3  1  0.832  0.168  0.165  1.0
  Ge  Ge4  1  0.663  0.832  0.835  1.0
  Ge  Ge5  1  0.168  0.337  0.835  1.0
  Ge  Ge6  1  0.000  0.000  0.629  1.0
  Ge  Ge7  1  0.500  0.500  0.500  1.0
  Ge  Ge8  1  0.000  0.000  0.371  1.0
  Ge  Ge9  1  0.000  0.000  0.000  1.0
  Ge  Ge10  1  0.337  0.168  0.165  1.0
  Ge  Ge11  1  0.832  0.663  0.165  1.0
  Ge  Ge12  1  0.168  0.832  0.835  1.0
  Ge  Ge13  1  0.000  0.500  0.500  1.0
  Ge  Ge14  1  0.333  0.667  0.669  1.0
  Ge  Ge15  1  0.333  0.667  0.045  1.0
  N  N16  1  0.667  0.333  0.087  1.0
  N  N17  1  0.823  0.177  0.417  1.0
  N  N18  1  0.844  0.156  0.913  1.0
  N  N19  1  0.177  0.355  0.583  1.0
  N  N20  1  0.645  0.823  0.583  1.0
  N  N21  1  0.688  0.844  0.087  1.0
  N  N22  1  0.156  0.312  0.087  1.0
  N  N23  1  0.000  0.000  0.761  1.0
  N  N24  1  0.000  0.000  0.239  1.0
  N  N25  1  0.844  0.688  0.913  1.0
  N  N26  1  0.312  0.156  0.913  1.0
  N  N27  1  0.823  0.645  0.417  1.0
  N  N28  1  0.355  0.177  0.417  1.0
  N  N29  1  0.156  0.844  0.087  1.0
  N  N30  1  0.177  0.823  0.583  1.0
  N  N31  1  0.333  0.667  0.913  1.0
  O  O32  1  0.521  0.479  0.242  1.0
  O  O33  1  0.667  0.333  0.564  1.0
  O  O34  1  0.958  0.479  0.242  1.0
  O  O35  1  0.521  0.042  0.242  1.0
  O  O36  1  0.042  0.521  0.758  1.0
  O  O37  1  0.479  0.958  0.758  1.0
  O  O38  1  0.333  0.667  0.436  1.0
  O  O39  1  0.479  0.521  0.758  1.0
[/CIF]
.