The structure described by Nd3AlSi5N10O crystallizes in the monoclinic Pc space group. There are three inequivalent Nd sites. In the first Nd site, Nd(1) is bonded in a 8-coordinate geometry to one N(1), one N(2), one N(6), one N(8), one N(9), two equivalent N(4), and one O(1) atom. In the second Nd site, Nd(2) is bonded in a 8-coordinate geometry to one N(1), one N(10), one N(2), one N(5), one N(7), two equivalent N(3), and one O(1) atom. In the third Nd site, Nd(3) is bonded in a 8-coordinate geometry to one N(1), one N(2), one N(3), one N(4), one N(5), one N(6), one N(7), and one N(8) atom. Al(1) is bonded to one N(1), one N(5), one N(8), and one N(9) atom to form AlN4 tetrahedra that share  a cornercorner with one Si(4)N4 tetrahedra, corners with two equivalent Si(1)N3O tetrahedra, and corners with two equivalent Si(5)N4 tetrahedra. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(4), one N(9), and one O(1) atom to form SiN3O tetrahedra that share  a cornercorner with one Si(2)N3O tetrahedra, corners with two equivalent Al(1)N4 tetrahedra, and corners with two equivalent Si(5)N4 tetrahedra. In the second Si site, Si(2) is bonded to one N(10), one N(2), one N(3), and one O(1) atom to form SiN3O tetrahedra that share  a cornercorner with one Si(1)N3O tetrahedra, corners with two equivalent Si(3)N4 tetrahedra, and corners with two equivalent Si(4)N4 tetrahedra. In the third Si site, Si(3) is bonded to one N(10), one N(2), one N(6), and one N(7) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(5)N4 tetrahedra, corners with two equivalent Si(2)N3O tetrahedra, and corners with two equivalent Si(4)N4 tetrahedra. In the fourth Si site, Si(4) is bonded to one N(10), one N(3), one N(5), and one N(7) atom to form SiN4 tetrahedra that share  a cornercorner with one Al(1)N4 tetrahedra, corners with two equivalent Si(2)N3O tetrahedra, and corners with two equivalent Si(3)N4 tetrahedra. In the fifth Si site, Si(5) is bonded to one N(4), one N(6), one N(8), and one N(9) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(3)N4 tetrahedra, corners with two equivalent Al(1)N4 tetrahedra, and corners with two equivalent Si(1)N3O tetrahedra. There are ten inequivalent N sites. In the first N site, N(1) is bonded in a 5-coordinate geometry to one Nd(1), one Nd(2), one Nd(3), one Al(1), and one Si(1) atom. In the second N site, N(2) is bonded in a distorted bent 120 degrees geometry to one Nd(1), one Nd(2), one Nd(3), one Si(2), and one Si(3) atom. In the third N site, N(3) is bonded in a distorted bent 120 degrees geometry to one Nd(3), two equivalent Nd(2), one Si(2), and one Si(4) atom. In the fourth N site, N(4) is bonded in a distorted bent 120 degrees geometry to one Nd(3), two equivalent Nd(1), one Si(1), and one Si(5) atom. In the fifth N site, N(5) is bonded to one Nd(2), one Nd(3), one Al(1), and one Si(4) atom to form distorted NNd2AlSi trigonal pyramids that share  a cornercorner with one N(6)Nd2Si2 trigonal pyramid,  a cornercorner with one N(7)Nd2Si2 trigonal pyramid,  an edgeedge with one N(8)Nd2AlSi trigonal pyramid, and  an edgeedge with one N(7)Nd2Si2 trigonal pyramid. In the sixth N site, N(6) is bonded to one Nd(1), one Nd(3), one Si(3), and one Si(5) atom to form distorted NNd2Si2 trigonal pyramids that share  a cornercorner with one N(5)Nd2AlSi trigonal pyramid,  a cornercorner with one N(8)Nd2AlSi trigonal pyramid,  an edgeedge with one N(8)Nd2AlSi trigonal pyramid, and  an edgeedge with one N(7)Nd2Si2 trigonal pyramid. In the seventh N site, N(7) is bonded to one Nd(2), one Nd(3), one Si(3), and one Si(4) atom to form distorted NNd2Si2 trigonal pyramids that share  a cornercorner with one N(5)Nd2AlSi trigonal pyramid,  a cornercorner with one N(8)Nd2AlSi trigonal pyramid,  an edgeedge with one N(5)Nd2AlSi trigonal pyramid, and  an edgeedge with one N(6)Nd2Si2 trigonal pyramid. In the eighth N site, N(8) is bonded to one Nd(1), one Nd(3), one Al(1), and one Si(5) atom to form distorted NNd2AlSi trigonal pyramids that share  a cornercorner with one N(6)Nd2Si2 trigonal pyramid,  a cornercorner with one N(7)Nd2Si2 trigonal pyramid,  an edgeedge with one N(5)Nd2AlSi trigonal pyramid, and  an edgeedge with one N(6)Nd2Si2 trigonal pyramid. In the ninth N site, N(9) is bonded in a distorted trigonal planar geometry to one Nd(1), one Al(1), one Si(1), and one Si(5) atom. In the tenth N site, N(10) is bonded in a trigonal planar geometry to one Nd(2), one Si(2), one Si(3), and one Si(4) atom. O(1) is bonded in a distorted linear geometry to one Nd(1), one Nd(2), one Si(1), and one Si(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Nd3AlSi5N10O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.930
_cell_length_b   10.200
_cell_length_c   10.210
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   89.746
_symmetry_Int_Tables_number   1
_cell_volume   513.459
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Nd  Nd0  1  0.032  0.686  0.808  1.0
  Nd  Nd1  1  0.018  0.307  0.183  1.0
  Nd  Nd2  1  0.018  0.807  0.317  1.0
  Nd  Nd3  1  0.032  0.186  0.692  1.0
  Nd  Nd4  1  0.037  0.502  0.499  1.0
  Nd  Nd5  1  0.037  0.002  0.001  1.0
  Al  Al6  1  0.485  0.715  0.570  1.0
  Al  Al7  1  0.485  0.215  0.930  1.0
  Si  Si8  1  0.974  0.884  0.619  1.0
  Si  Si9  1  0.970  0.118  0.385  1.0
  Si  Si10  1  0.970  0.618  0.115  1.0
  Si  Si11  1  0.974  0.384  0.881  1.0
  Si  Si12  1  0.480  0.289  0.425  1.0
  Si  Si13  1  0.480  0.789  0.075  1.0
  Si  Si14  1  0.480  0.571  0.283  1.0
  Si  Si15  1  0.477  0.427  0.711  1.0
  Si  Si16  1  0.480  0.071  0.217  1.0
  Si  Si17  1  0.477  0.927  0.789  1.0
  N  N18  1  0.859  0.737  0.561  1.0
  N  N19  1  0.831  0.266  0.429  1.0
  N  N20  1  0.831  0.766  0.071  1.0
  N  N21  1  0.859  0.237  0.939  1.0
  N  N22  1  0.832  0.567  0.260  1.0
  N  N23  1  0.827  0.429  0.735  1.0
  N  N24  1  0.832  0.067  0.240  1.0
  N  N25  1  0.827  0.929  0.765  1.0
  N  N26  1  0.367  0.673  0.405  1.0
  N  N27  1  0.369  0.324  0.582  1.0
  N  N28  1  0.369  0.824  0.918  1.0
  N  N29  1  0.367  0.173  0.095  1.0
  N  N30  1  0.370  0.413  0.319  1.0
  N  N31  1  0.361  0.581  0.677  1.0
  N  N32  1  0.370  0.913  0.181  1.0
  N  N33  1  0.361  0.081  0.823  1.0
  N  N34  1  0.313  0.860  0.652  1.0
  N  N35  1  0.316  0.145  0.359  1.0
  N  N36  1  0.316  0.645  0.141  1.0
  N  N37  1  0.313  0.360  0.848  1.0
  O  O38  1  0.942  0.003  0.502  1.0
  O  O39  1  0.942  0.503  0.998  1.0
[/CIF]
.
The structure described by Nd3AlSi5N10O crystallizes in the monoclinic Pc space group. There are three inequivalent Nd sites. In the first Nd site, Nd(1) is bonded in a 8-coordinate geometry to one N(1), one N(2), one N(6), one N(8), one N(9), two equivalent N(4), and one O(1) atom. In the second Nd site, Nd(2) is bonded in a 8-coordinate geometry to one N(1), one N(10), one N(2), one N(5), one N(7), two equivalent N(3), and one O(1) atom. In the third Nd site, Nd(3) is bonded in a 8-coordinate geometry to one N(1), one N(2), one N(3), one N(4), one N(5), one N(6), one N(7), and one N(8) atom. Al(1) is bonded to one N(1), one N(5), one N(8), and one N(9) atom to form AlN4 tetrahedra that share  a cornercorner with one Si(4)N4 tetrahedra, corners with two equivalent Si(1)N3O tetrahedra, and corners with two equivalent Si(5)N4 tetrahedra. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(4), one N(9), and one O(1) atom to form SiN3O tetrahedra that share  a cornercorner with one Si(2)N3O tetrahedra, corners with two equivalent Al(1)N4 tetrahedra, and corners with two equivalent Si(5)N4 tetrahedra. In the second Si site, Si(2) is bonded to one N(10), one N(2), one N(3), and one O(1) atom to form SiN3O tetrahedra that share  a cornercorner with one Si(1)N3O tetrahedra, corners with two equivalent Si(3)N4 tetrahedra, and corners with two equivalent Si(4)N4 tetrahedra. In the third Si site, Si(3) is bonded to one N(10), one N(2), one N(6), and one N(7) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(5)N4 tetrahedra, corners with two equivalent Si(2)N3O tetrahedra, and corners with two equivalent Si(4)N4 tetrahedra. In the fourth Si site, Si(4) is bonded to one N(10), one N(3), one N(5), and one N(7) atom to form SiN4 tetrahedra that share  a cornercorner with one Al(1)N4 tetrahedra, corners with two equivalent Si(2)N3O tetrahedra, and corners with two equivalent Si(3)N4 tetrahedra. In the fifth Si site, Si(5) is bonded to one N(4), one N(6), one N(8), and one N(9) atom to form SiN4 tetrahedra that share  a cornercorner with one Si(3)N4 tetrahedra, corners with two equivalent Al(1)N4 tetrahedra, and corners with two equivalent Si(1)N3O tetrahedra. There are ten inequivalent N sites. In the first N site, N(1) is bonded in a 5-coordinate geometry to one Nd(1), one Nd(2), one Nd(3), one Al(1), and one Si(1) atom. In the second N site, N(2) is bonded in a distorted bent 120 degrees geometry to one Nd(1), one Nd(2), one Nd(3), one Si(2), and one Si(3) atom. In the third N site, N(3) is bonded in a distorted bent 120 degrees geometry to one Nd(3), two equivalent Nd(2), one Si(2), and one Si(4) atom. In the fourth N site, N(4) is bonded in a distorted bent 120 degrees geometry to one Nd(3), two equivalent Nd(1), one Si(1), and one Si(5) atom. In the fifth N site, N(5) is bonded to one Nd(2), one Nd(3), one Al(1), and one Si(4) atom to form distorted NNd2AlSi trigonal pyramids that share  a cornercorner with one N(6)Nd2Si2 trigonal pyramid,  a cornercorner with one N(7)Nd2Si2 trigonal pyramid,  an edgeedge with one N(8)Nd2AlSi trigonal pyramid, and  an edgeedge with one N(7)Nd2Si2 trigonal pyramid. In the sixth N site, N(6) is bonded to one Nd(1), one Nd(3), one Si(3), and one Si(5) atom to form distorted NNd2Si2 trigonal pyramids that share  a cornercorner with one N(5)Nd2AlSi trigonal pyramid,  a cornercorner with one N(8)Nd2AlSi trigonal pyramid,  an edgeedge with one N(8)Nd2AlSi trigonal pyramid, and  an edgeedge with one N(7)Nd2Si2 trigonal pyramid. In the seventh N site, N(7) is bonded to one Nd(2), one Nd(3), one Si(3), and one Si(4) atom to form distorted NNd2Si2 trigonal pyramids that share  a cornercorner with one N(5)Nd2AlSi trigonal pyramid,  a cornercorner with one N(8)Nd2AlSi trigonal pyramid,  an edgeedge with one N(5)Nd2AlSi trigonal pyramid, and  an edgeedge with one N(6)Nd2Si2 trigonal pyramid. In the eighth N site, N(8) is bonded to one Nd(1), one Nd(3), one Al(1), and one Si(5) atom to form distorted NNd2AlSi trigonal pyramids that share  a cornercorner with one N(6)Nd2Si2 trigonal pyramid,  a cornercorner with one N(7)Nd2Si2 trigonal pyramid,  an edgeedge with one N(5)Nd2AlSi trigonal pyramid, and  an edgeedge with one N(6)Nd2Si2 trigonal pyramid. In the ninth N site, N(9) is bonded in a distorted trigonal planar geometry to one Nd(1), one Al(1), one Si(1), and one Si(5) atom. In the tenth N site, N(10) is bonded in a trigonal planar geometry to one Nd(2), one Si(2), one Si(3), and one Si(4) atom. O(1) is bonded in a distorted linear geometry to one Nd(1), one Nd(2), one Si(1), and one Si(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Nd3AlSi5N10O
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.930
_cell_length_b   10.200
_cell_length_c   10.210
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   89.746
_symmetry_Int_Tables_number   1
_cell_volume   513.459
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Nd  Nd0  1  0.032  0.686  0.808  1.0
  Nd  Nd1  1  0.018  0.307  0.183  1.0
  Nd  Nd2  1  0.018  0.807  0.317  1.0
  Nd  Nd3  1  0.032  0.186  0.692  1.0
  Nd  Nd4  1  0.037  0.502  0.499  1.0
  Nd  Nd5  1  0.037  0.002  0.001  1.0
  Al  Al6  1  0.485  0.715  0.570  1.0
  Al  Al7  1  0.485  0.215  0.930  1.0
  Si  Si8  1  0.974  0.884  0.619  1.0
  Si  Si9  1  0.970  0.118  0.385  1.0
  Si  Si10  1  0.970  0.618  0.115  1.0
  Si  Si11  1  0.974  0.384  0.881  1.0
  Si  Si12  1  0.480  0.289  0.425  1.0
  Si  Si13  1  0.480  0.789  0.075  1.0
  Si  Si14  1  0.480  0.571  0.283  1.0
  Si  Si15  1  0.477  0.427  0.711  1.0
  Si  Si16  1  0.480  0.071  0.217  1.0
  Si  Si17  1  0.477  0.927  0.789  1.0
  N  N18  1  0.859  0.737  0.561  1.0
  N  N19  1  0.831  0.266  0.429  1.0
  N  N20  1  0.831  0.766  0.071  1.0
  N  N21  1  0.859  0.237  0.939  1.0
  N  N22  1  0.832  0.567  0.260  1.0
  N  N23  1  0.827  0.429  0.735  1.0
  N  N24  1  0.832  0.067  0.240  1.0
  N  N25  1  0.827  0.929  0.765  1.0
  N  N26  1  0.367  0.673  0.405  1.0
  N  N27  1  0.369  0.324  0.582  1.0
  N  N28  1  0.369  0.824  0.918  1.0
  N  N29  1  0.367  0.173  0.095  1.0
  N  N30  1  0.370  0.413  0.319  1.0
  N  N31  1  0.361  0.581  0.677  1.0
  N  N32  1  0.370  0.913  0.181  1.0
  N  N33  1  0.361  0.081  0.823  1.0
  N  N34  1  0.313  0.860  0.652  1.0
  N  N35  1  0.316  0.145  0.359  1.0
  N  N36  1  0.316  0.645  0.141  1.0
  N  N37  1  0.313  0.360  0.848  1.0
  O  O38  1  0.942  0.003  0.502  1.0
  O  O39  1  0.942  0.503  0.998  1.0
[/CIF]
.