The crystal structure described by ThGe2 crystallizes in the tetragonal I4_1/amd space group. Th(1) is bonded to twelve equivalent Ge(1) atoms to form a mixture of distorted edge and face-sharing ThGe12 cuboctahedra. Ge(1) is bonded in a 9-coordinate geometry to six equivalent Th(1) and three equivalent Ge(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_ThGe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.069
_cell_length_b   4.069
_cell_length_c   8.882
_cell_angle_alpha   103.242
_cell_angle_beta   103.242
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   139.130
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Th  Th0  1  0.500  0.500  0.000  1.0
  Th  Th1  1  0.750  0.250  0.500  1.0
  Ge  Ge2  1  0.330  0.830  0.660  1.0
  Ge  Ge3  1  0.080  0.080  0.160  1.0
  Ge  Ge4  1  0.170  0.670  0.340  1.0
  Ge  Ge5  1  0.920  0.920  0.840  1.0
[/CIF]
.
The crystal structure described by ThGe2 crystallizes in the tetragonal I4_1/amd space group. Th(1) is bonded to twelve equivalent Ge(1) atoms to form a mixture of distorted edge and face-sharing ThGe12 cuboctahedra. Ge(1) is bonded in a 9-coordinate geometry to six equivalent Th(1) and three equivalent Ge(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_ThGe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.069
_cell_length_b   4.069
_cell_length_c   8.882
_cell_angle_alpha   103.242
_cell_angle_beta   103.242
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   139.130
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Th  Th0  1  0.500  0.500  0.000  1.0
  Th  Th1  1  0.750  0.250  0.500  1.0
  Ge  Ge2  1  0.330  0.830  0.660  1.0
  Ge  Ge3  1  0.080  0.080  0.160  1.0
  Ge  Ge4  1  0.170  0.670  0.340  1.0
  Ge  Ge5  1  0.920  0.920  0.840  1.0
[/CIF]
.