The material structure described by In4Sn3O12 crystallizes in the triclinic P1 space group. There are four inequivalent In sites. In the first In site, In(1) is bonded in a 7-coordinate geometry to one O(12), one O(2), one O(3), one O(4), one O(5), one O(8), and one O(9) atom. In the second In site, In(2) is bonded in a 6-coordinate geometry to one O(10), one O(12), one O(2), one O(3), one O(4), and one O(6) atom. In the third In site, In(3) is bonded in a 6-coordinate geometry to one O(1), one O(10), one O(11), one O(3), one O(4), and one O(5) atom. In the fourth In site, In(4) is bonded in a 7-coordinate geometry to one O(1), one O(11), one O(12), one O(2), one O(5), one O(6), and one O(9) atom. There are three inequivalent Sn sites. In the first Sn site, Sn(1) is bonded in an octahedral geometry to one O(10), one O(11), one O(12), one O(7), one O(8), and one O(9) atom. In the second Sn site, Sn(2) is bonded in a 6-coordinate geometry to one O(1), one O(3), one O(5), one O(6), one O(7), and one O(9) atom. In the third Sn site, Sn(3) is bonded in a 7-coordinate geometry to one O(1), one O(11), one O(2), one O(4), one O(6), one O(7), and one O(8) atom. There are twelve inequivalent O sites. In the first O site, O(1) is bonded to one In(3), one In(4), one Sn(2), and one Sn(3) atom to form distorted OIn2Sn2 trigonal pyramids that share  a cornercorner with one O(6)In2Sn2 tetrahedra,  a cornercorner with one O(5)In3Sn tetrahedra, corners with two equivalent O(2)In3Sn tetrahedra, corners with two equivalent O(3)In3Sn tetrahedra,  a cornercorner with one O(12)In3Sn trigonal pyramid,  an edgeedge with one O(6)In2Sn2 tetrahedra,  an edgeedge with one O(4)In3Sn tetrahedra, and  an edgeedge with one O(5)In3Sn tetrahedra. In the second O site, O(2) is bonded to one In(1), one In(2), one In(4), and one Sn(3) atom to form OIn3Sn tetrahedra that share  a cornercorner with one O(6)In2Sn2 tetrahedra,  a cornercorner with one O(4)In3Sn tetrahedra, corners with two equivalent O(3)In3Sn tetrahedra,  a cornercorner with one O(12)In3Sn trigonal pyramid, corners with two equivalent O(1)In2Sn2 trigonal pyramids,  an edgeedge with one O(6)In2Sn2 tetrahedra,  an edgeedge with one O(4)In3Sn tetrahedra,  an edgeedge with one O(5)In3Sn tetrahedra, and  an edgeedge with one O(12)In3Sn trigonal pyramid. In the third O site, O(3) is bonded to one In(1), one In(2), one In(3), and one Sn(2) atom to form distorted OIn3Sn tetrahedra that share  a cornercorner with one O(4)In3Sn tetrahedra,  a cornercorner with one O(5)In3Sn tetrahedra, corners with two equivalent O(2)In3Sn tetrahedra, corners with two equivalent O(1)In2Sn2 trigonal pyramids,  an edgeedge with one O(6)In2Sn2 tetrahedra,  an edgeedge with one O(4)In3Sn tetrahedra,  an edgeedge with one O(5)In3Sn tetrahedra, and  an edgeedge with one O(12)In3Sn trigonal pyramid. In the fourth O site, O(4) is bonded to one In(1), one In(2), one In(3), and one Sn(3) atom to form distorted OIn3Sn tetrahedra that share  a cornercorner with one O(2)In3Sn tetrahedra,  a cornercorner with one O(3)In3Sn tetrahedra, corners with two equivalent O(6)In2Sn2 tetrahedra, corners with two equivalent O(5)In3Sn tetrahedra, corners with two equivalent O(12)In3Sn trigonal pyramids,  an edgeedge with one O(2)In3Sn tetrahedra,  an edgeedge with one O(3)In3Sn tetrahedra, and  an edgeedge with one O(1)In2Sn2 trigonal pyramid. In the fifth O site, O(5) is bonded to one In(1), one In(3), one In(4), and one Sn(2) atom to form OIn3Sn tetrahedra that share  a cornercorner with one O(3)In3Sn tetrahedra, corners with two equivalent O(6)In2Sn2 tetrahedra, corners with two equivalent O(4)In3Sn tetrahedra,  a cornercorner with one O(1)In2Sn2 trigonal pyramid, corners with two equivalent O(12)In3Sn trigonal pyramids,  an edgeedge with one O(2)In3Sn tetrahedra,  an edgeedge with one O(3)In3Sn tetrahedra, and  an edgeedge with one O(1)In2Sn2 trigonal pyramid. In the sixth O site, O(6) is bonded to one In(2), one In(4), one Sn(2), and one Sn(3) atom to form OIn2Sn2 tetrahedra that share  a cornercorner with one O(2)In3Sn tetrahedra, corners with two equivalent O(4)In3Sn tetrahedra, corners with two equivalent O(5)In3Sn tetrahedra,  a cornercorner with one O(1)In2Sn2 trigonal pyramid, corners with two equivalent O(12)In3Sn trigonal pyramids,  an edgeedge with one O(2)In3Sn tetrahedra,  an edgeedge with one O(3)In3Sn tetrahedra, and  an edgeedge with one O(1)In2Sn2 trigonal pyramid. In the seventh O site, O(7) is bonded in a distorted trigonal non-coplanar geometry to one Sn(1), one Sn(2), and one Sn(3) atom. In the eighth O site, O(8) is bonded in a distorted trigonal non-coplanar geometry to one In(1), one Sn(1), and one Sn(3) atom. In the ninth O site, O(9) is bonded in a 4-coordinate geometry to one In(1), one In(4), one Sn(1), and one Sn(2) atom. In the tenth O site, O(10) is bonded in a distorted trigonal non-coplanar geometry to one In(2), one In(3), and one Sn(1) atom. In the eleventh O site, O(11) is bonded in a 4-coordinate geometry to one In(3), one In(4), one Sn(1), and one Sn(3) atom. In the twelfth O site, O(12) is bonded to one In(1), one In(2), one In(4), and one Sn(1) atom to form distorted OIn3Sn trigonal pyramids that share  a cornercorner with one O(2)In3Sn tetrahedra, corners with two equivalent O(6)In2Sn2 tetrahedra, corners with two equivalent O(4)In3Sn tetrahedra, corners with two equivalent O(5)In3Sn tetrahedra,  a cornercorner with one O(1)In2Sn2 trigonal pyramid,  an edgeedge with one O(2)In3Sn tetrahedra, and  an edgeedge with one O(3)In3Sn tetrahedra. is represented by the CIF card [CIF]
data_In4(SnO4)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.271
_cell_length_b   6.352
_cell_length_c   6.366
_cell_angle_alpha   99.553
_cell_angle_beta   99.536
_cell_angle_gamma   99.728
_symmetry_Int_Tables_number   1
_cell_volume   241.525
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.694  0.865  0.393  1.0
  In  In1  1  0.138  0.604  0.317  1.0
  In  In2  1  0.604  0.314  0.138  1.0
  In  In3  1  0.310  0.129  0.605  1.0
  Sn  Sn4  1  0.001  0.005  0.001  1.0
  Sn  Sn5  1  0.860  0.397  0.682  1.0
  Sn  Sn6  1  0.396  0.686  0.861  1.0
  O  O7  1  0.590  0.431  0.821  1.0
  O  O8  1  0.416  0.810  0.584  1.0
  O  O9  1  0.821  0.580  0.431  1.0
  O  O10  1  0.414  0.584  0.162  1.0
  O  O11  1  0.590  0.180  0.426  1.0
  O  O12  1  0.178  0.417  0.600  1.0
  O  O13  1  0.057  0.687  0.890  1.0
  O  O14  1  0.681  0.899  0.046  1.0
  O  O15  1  0.905  0.073  0.693  1.0
  O  O16  1  0.944  0.316  0.097  1.0
  O  O17  1  0.319  0.082  0.942  1.0
  O  O18  1  0.085  0.940  0.311  1.0
[/CIF]
.
The material structure described by In4Sn3O12 crystallizes in the triclinic P1 space group. There are four inequivalent In sites. In the first In site, In(1) is bonded in a 7-coordinate geometry to one O(12), one O(2), one O(3), one O(4), one O(5), one O(8), and one O(9) atom. In the second In site, In(2) is bonded in a 6-coordinate geometry to one O(10), one O(12), one O(2), one O(3), one O(4), and one O(6) atom. In the third In site, In(3) is bonded in a 6-coordinate geometry to one O(1), one O(10), one O(11), one O(3), one O(4), and one O(5) atom. In the fourth In site, In(4) is bonded in a 7-coordinate geometry to one O(1), one O(11), one O(12), one O(2), one O(5), one O(6), and one O(9) atom. There are three inequivalent Sn sites. In the first Sn site, Sn(1) is bonded in an octahedral geometry to one O(10), one O(11), one O(12), one O(7), one O(8), and one O(9) atom. In the second Sn site, Sn(2) is bonded in a 6-coordinate geometry to one O(1), one O(3), one O(5), one O(6), one O(7), and one O(9) atom. In the third Sn site, Sn(3) is bonded in a 7-coordinate geometry to one O(1), one O(11), one O(2), one O(4), one O(6), one O(7), and one O(8) atom. There are twelve inequivalent O sites. In the first O site, O(1) is bonded to one In(3), one In(4), one Sn(2), and one Sn(3) atom to form distorted OIn2Sn2 trigonal pyramids that share  a cornercorner with one O(6)In2Sn2 tetrahedra,  a cornercorner with one O(5)In3Sn tetrahedra, corners with two equivalent O(2)In3Sn tetrahedra, corners with two equivalent O(3)In3Sn tetrahedra,  a cornercorner with one O(12)In3Sn trigonal pyramid,  an edgeedge with one O(6)In2Sn2 tetrahedra,  an edgeedge with one O(4)In3Sn tetrahedra, and  an edgeedge with one O(5)In3Sn tetrahedra. In the second O site, O(2) is bonded to one In(1), one In(2), one In(4), and one Sn(3) atom to form OIn3Sn tetrahedra that share  a cornercorner with one O(6)In2Sn2 tetrahedra,  a cornercorner with one O(4)In3Sn tetrahedra, corners with two equivalent O(3)In3Sn tetrahedra,  a cornercorner with one O(12)In3Sn trigonal pyramid, corners with two equivalent O(1)In2Sn2 trigonal pyramids,  an edgeedge with one O(6)In2Sn2 tetrahedra,  an edgeedge with one O(4)In3Sn tetrahedra,  an edgeedge with one O(5)In3Sn tetrahedra, and  an edgeedge with one O(12)In3Sn trigonal pyramid. In the third O site, O(3) is bonded to one In(1), one In(2), one In(3), and one Sn(2) atom to form distorted OIn3Sn tetrahedra that share  a cornercorner with one O(4)In3Sn tetrahedra,  a cornercorner with one O(5)In3Sn tetrahedra, corners with two equivalent O(2)In3Sn tetrahedra, corners with two equivalent O(1)In2Sn2 trigonal pyramids,  an edgeedge with one O(6)In2Sn2 tetrahedra,  an edgeedge with one O(4)In3Sn tetrahedra,  an edgeedge with one O(5)In3Sn tetrahedra, and  an edgeedge with one O(12)In3Sn trigonal pyramid. In the fourth O site, O(4) is bonded to one In(1), one In(2), one In(3), and one Sn(3) atom to form distorted OIn3Sn tetrahedra that share  a cornercorner with one O(2)In3Sn tetrahedra,  a cornercorner with one O(3)In3Sn tetrahedra, corners with two equivalent O(6)In2Sn2 tetrahedra, corners with two equivalent O(5)In3Sn tetrahedra, corners with two equivalent O(12)In3Sn trigonal pyramids,  an edgeedge with one O(2)In3Sn tetrahedra,  an edgeedge with one O(3)In3Sn tetrahedra, and  an edgeedge with one O(1)In2Sn2 trigonal pyramid. In the fifth O site, O(5) is bonded to one In(1), one In(3), one In(4), and one Sn(2) atom to form OIn3Sn tetrahedra that share  a cornercorner with one O(3)In3Sn tetrahedra, corners with two equivalent O(6)In2Sn2 tetrahedra, corners with two equivalent O(4)In3Sn tetrahedra,  a cornercorner with one O(1)In2Sn2 trigonal pyramid, corners with two equivalent O(12)In3Sn trigonal pyramids,  an edgeedge with one O(2)In3Sn tetrahedra,  an edgeedge with one O(3)In3Sn tetrahedra, and  an edgeedge with one O(1)In2Sn2 trigonal pyramid. In the sixth O site, O(6) is bonded to one In(2), one In(4), one Sn(2), and one Sn(3) atom to form OIn2Sn2 tetrahedra that share  a cornercorner with one O(2)In3Sn tetrahedra, corners with two equivalent O(4)In3Sn tetrahedra, corners with two equivalent O(5)In3Sn tetrahedra,  a cornercorner with one O(1)In2Sn2 trigonal pyramid, corners with two equivalent O(12)In3Sn trigonal pyramids,  an edgeedge with one O(2)In3Sn tetrahedra,  an edgeedge with one O(3)In3Sn tetrahedra, and  an edgeedge with one O(1)In2Sn2 trigonal pyramid. In the seventh O site, O(7) is bonded in a distorted trigonal non-coplanar geometry to one Sn(1), one Sn(2), and one Sn(3) atom. In the eighth O site, O(8) is bonded in a distorted trigonal non-coplanar geometry to one In(1), one Sn(1), and one Sn(3) atom. In the ninth O site, O(9) is bonded in a 4-coordinate geometry to one In(1), one In(4), one Sn(1), and one Sn(2) atom. In the tenth O site, O(10) is bonded in a distorted trigonal non-coplanar geometry to one In(2), one In(3), and one Sn(1) atom. In the eleventh O site, O(11) is bonded in a 4-coordinate geometry to one In(3), one In(4), one Sn(1), and one Sn(3) atom. In the twelfth O site, O(12) is bonded to one In(1), one In(2), one In(4), and one Sn(1) atom to form distorted OIn3Sn trigonal pyramids that share  a cornercorner with one O(2)In3Sn tetrahedra, corners with two equivalent O(6)In2Sn2 tetrahedra, corners with two equivalent O(4)In3Sn tetrahedra, corners with two equivalent O(5)In3Sn tetrahedra,  a cornercorner with one O(1)In2Sn2 trigonal pyramid,  an edgeedge with one O(2)In3Sn tetrahedra, and  an edgeedge with one O(3)In3Sn tetrahedra. is represented by the CIF card [CIF]
data_In4(SnO4)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.271
_cell_length_b   6.352
_cell_length_c   6.366
_cell_angle_alpha   99.553
_cell_angle_beta   99.536
_cell_angle_gamma   99.728
_symmetry_Int_Tables_number   1
_cell_volume   241.525
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.694  0.865  0.393  1.0
  In  In1  1  0.138  0.604  0.317  1.0
  In  In2  1  0.604  0.314  0.138  1.0
  In  In3  1  0.310  0.129  0.605  1.0
  Sn  Sn4  1  0.001  0.005  0.001  1.0
  Sn  Sn5  1  0.860  0.397  0.682  1.0
  Sn  Sn6  1  0.396  0.686  0.861  1.0
  O  O7  1  0.590  0.431  0.821  1.0
  O  O8  1  0.416  0.810  0.584  1.0
  O  O9  1  0.821  0.580  0.431  1.0
  O  O10  1  0.414  0.584  0.162  1.0
  O  O11  1  0.590  0.180  0.426  1.0
  O  O12  1  0.178  0.417  0.600  1.0
  O  O13  1  0.057  0.687  0.890  1.0
  O  O14  1  0.681  0.899  0.046  1.0
  O  O15  1  0.905  0.073  0.693  1.0
  O  O16  1  0.944  0.316  0.097  1.0
  O  O17  1  0.319  0.082  0.942  1.0
  O  O18  1  0.085  0.940  0.311  1.0
[/CIF]
.