The compound described by Tb11Si4In6 crystallizes in the tetragonal I4/mmm space group. There are four inequivalent Tb sites. In the first Tb site, Tb(1) is bonded to four equivalent In(1), one Si(1), one Si(2), and one Si(3) atom to form a mixture of distorted edge, face, and corner-sharing TbIn4Si3 pentagonal bipyramids. In the second Tb site, Tb(2) is bonded in a 7-coordinate geometry to two equivalent In(1), two equivalent In(2), one Si(3), and two equivalent Si(1) atoms. In the third Tb site, Tb(3) is bonded in a 7-coordinate geometry to one In(2), two equivalent In(1), two equivalent Si(1), and two equivalent Si(2) atoms. In the fourth Tb site, Tb(4) is bonded in a 9-coordinate geometry to four equivalent In(1), four equivalent In(2), and one Si(2) atom. There are two inequivalent In sites. In the first In site, In(1) is bonded in a 10-coordinate geometry to one Tb(3), one Tb(4), two equivalent Tb(2), four equivalent Tb(1), one In(1), and one In(2) atom. In the second In site, In(2) is bonded in a 11-coordinate geometry to one Tb(3), two equivalent Tb(4), four equivalent Tb(2), two equivalent In(1), and two equivalent In(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 8-coordinate geometry to two equivalent Tb(1), two equivalent Tb(3), and four equivalent Tb(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Tb(4), four equivalent Tb(1), and four equivalent Tb(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to four equivalent Tb(1) and four equivalent Tb(2) atoms. is represented by the CIF file [CIF]
data_Tb11(In3Si2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.535
_cell_length_b   11.535
_cell_length_c   11.535
_cell_angle_alpha   119.836
_cell_angle_beta   119.836
_cell_angle_gamma   90.284
_symmetry_Int_Tables_number   1
_cell_volume   1087.904
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Tb  Tb0  1  0.685  0.935  0.250  1.0
  Tb  Tb1  1  0.685  0.434  0.750  1.0
  Tb  Tb2  1  0.935  0.685  0.250  1.0
  Tb  Tb3  1  0.434  0.685  0.750  1.0
  Tb  Tb4  1  0.315  0.065  0.750  1.0
  Tb  Tb5  1  0.315  0.566  0.250  1.0
  Tb  Tb6  1  0.065  0.315  0.750  1.0
  Tb  Tb7  1  0.566  0.315  0.250  1.0
  Tb  Tb8  1  0.899  0.247  0.347  1.0
  Tb  Tb9  1  0.899  0.552  0.653  1.0
  Tb  Tb10  1  0.247  0.899  0.347  1.0
  Tb  Tb11  1  0.552  0.899  0.653  1.0
  Tb  Tb12  1  0.101  0.753  0.653  1.0
  Tb  Tb13  1  0.101  0.448  0.347  1.0
  Tb  Tb14  1  0.753  0.101  0.653  1.0
  Tb  Tb15  1  0.448  0.101  0.347  1.0
  Tb  Tb16  1  0.333  0.333  0.665  1.0
  Tb  Tb17  1  0.667  0.667  0.335  1.0
  Tb  Tb18  1  0.333  0.667  0.000  1.0
  Tb  Tb19  1  0.667  0.333  0.000  1.0
  Tb  Tb20  1  0.832  0.832  0.000  1.0
  Tb  Tb21  1  0.168  0.168  0.000  1.0
  In  In22  1  0.034  0.034  0.411  1.0
  In  In23  1  0.623  0.623  0.589  1.0
  In  In24  1  0.034  0.623  0.000  1.0
  In  In25  1  0.623  0.034  0.000  1.0
  In  In26  1  0.966  0.966  0.589  1.0
  In  In27  1  0.377  0.377  0.411  1.0
  In  In28  1  0.966  0.377  0.000  1.0
  In  In29  1  0.377  0.966  0.000  1.0
  In  In30  1  0.129  0.129  0.259  1.0
  In  In31  1  0.871  0.871  0.741  1.0
  In  In32  1  0.129  0.871  0.000  1.0
  In  In33  1  0.871  0.129  0.000  1.0
  Si  Si34  1  0.154  0.500  0.654  1.0
  Si  Si35  1  0.846  0.500  0.346  1.0
  Si  Si36  1  0.500  0.846  0.346  1.0
  Si  Si37  1  0.500  0.154  0.654  1.0
  Si  Si38  1  0.617  0.617  0.000  1.0
  Si  Si39  1  0.383  0.383  0.000  1.0
  Si  Si40  1  0.750  0.250  0.500  1.0
  Si  Si41  1  0.250  0.750  0.500  1.0
[/CIF]
.
The compound described by Tb11Si4In6 crystallizes in the tetragonal I4/mmm space group. There are four inequivalent Tb sites. In the first Tb site, Tb(1) is bonded to four equivalent In(1), one Si(1), one Si(2), and one Si(3) atom to form a mixture of distorted edge, face, and corner-sharing TbIn4Si3 pentagonal bipyramids. In the second Tb site, Tb(2) is bonded in a 7-coordinate geometry to two equivalent In(1), two equivalent In(2), one Si(3), and two equivalent Si(1) atoms. In the third Tb site, Tb(3) is bonded in a 7-coordinate geometry to one In(2), two equivalent In(1), two equivalent Si(1), and two equivalent Si(2) atoms. In the fourth Tb site, Tb(4) is bonded in a 9-coordinate geometry to four equivalent In(1), four equivalent In(2), and one Si(2) atom. There are two inequivalent In sites. In the first In site, In(1) is bonded in a 10-coordinate geometry to one Tb(3), one Tb(4), two equivalent Tb(2), four equivalent Tb(1), one In(1), and one In(2) atom. In the second In site, In(2) is bonded in a 11-coordinate geometry to one Tb(3), two equivalent Tb(4), four equivalent Tb(2), two equivalent In(1), and two equivalent In(2) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 8-coordinate geometry to two equivalent Tb(1), two equivalent Tb(3), and four equivalent Tb(2) atoms. In the second Si site, Si(2) is bonded in a 9-coordinate geometry to one Tb(4), four equivalent Tb(1), and four equivalent Tb(3) atoms. In the third Si site, Si(3) is bonded in a 8-coordinate geometry to four equivalent Tb(1) and four equivalent Tb(2) atoms. is represented by the CIF file [CIF]
data_Tb11(In3Si2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.535
_cell_length_b   11.535
_cell_length_c   11.535
_cell_angle_alpha   119.836
_cell_angle_beta   119.836
_cell_angle_gamma   90.284
_symmetry_Int_Tables_number   1
_cell_volume   1087.904
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Tb  Tb0  1  0.685  0.935  0.250  1.0
  Tb  Tb1  1  0.685  0.434  0.750  1.0
  Tb  Tb2  1  0.935  0.685  0.250  1.0
  Tb  Tb3  1  0.434  0.685  0.750  1.0
  Tb  Tb4  1  0.315  0.065  0.750  1.0
  Tb  Tb5  1  0.315  0.566  0.250  1.0
  Tb  Tb6  1  0.065  0.315  0.750  1.0
  Tb  Tb7  1  0.566  0.315  0.250  1.0
  Tb  Tb8  1  0.899  0.247  0.347  1.0
  Tb  Tb9  1  0.899  0.552  0.653  1.0
  Tb  Tb10  1  0.247  0.899  0.347  1.0
  Tb  Tb11  1  0.552  0.899  0.653  1.0
  Tb  Tb12  1  0.101  0.753  0.653  1.0
  Tb  Tb13  1  0.101  0.448  0.347  1.0
  Tb  Tb14  1  0.753  0.101  0.653  1.0
  Tb  Tb15  1  0.448  0.101  0.347  1.0
  Tb  Tb16  1  0.333  0.333  0.665  1.0
  Tb  Tb17  1  0.667  0.667  0.335  1.0
  Tb  Tb18  1  0.333  0.667  0.000  1.0
  Tb  Tb19  1  0.667  0.333  0.000  1.0
  Tb  Tb20  1  0.832  0.832  0.000  1.0
  Tb  Tb21  1  0.168  0.168  0.000  1.0
  In  In22  1  0.034  0.034  0.411  1.0
  In  In23  1  0.623  0.623  0.589  1.0
  In  In24  1  0.034  0.623  0.000  1.0
  In  In25  1  0.623  0.034  0.000  1.0
  In  In26  1  0.966  0.966  0.589  1.0
  In  In27  1  0.377  0.377  0.411  1.0
  In  In28  1  0.966  0.377  0.000  1.0
  In  In29  1  0.377  0.966  0.000  1.0
  In  In30  1  0.129  0.129  0.259  1.0
  In  In31  1  0.871  0.871  0.741  1.0
  In  In32  1  0.129  0.871  0.000  1.0
  In  In33  1  0.871  0.129  0.000  1.0
  Si  Si34  1  0.154  0.500  0.654  1.0
  Si  Si35  1  0.846  0.500  0.346  1.0
  Si  Si36  1  0.500  0.846  0.346  1.0
  Si  Si37  1  0.500  0.154  0.654  1.0
  Si  Si38  1  0.617  0.617  0.000  1.0
  Si  Si39  1  0.383  0.383  0.000  1.0
  Si  Si40  1  0.750  0.250  0.500  1.0
  Si  Si41  1  0.250  0.750  0.500  1.0
[/CIF]
.