The crystal structure described by K4In9Si14 crystallizes in the orthorhombic Ama2 space group. There are four inequivalent K sites. In the first K site, K(1) is bonded in a 8-coordinate geometry to two equivalent Si(1), two equivalent Si(2), two equivalent Si(4), and two equivalent Si(5) atoms. In the second K site, K(2) is bonded in a 10-coordinate geometry to two equivalent In(5), two equivalent Si(3), two equivalent Si(6), two equivalent Si(7), and two equivalent Si(8) atoms. In the third K site, K(3) is bonded in a 8-coordinate geometry to two equivalent Si(1), two equivalent Si(2), two equivalent Si(4), and two equivalent Si(5) atoms. In the fourth K site, K(4) is bonded in a 8-coordinate geometry to two equivalent In(1), two equivalent In(2), two equivalent In(3), two equivalent In(4), one Si(3), one Si(8), and two equivalent Si(2) atoms. There are five inequivalent In sites. In the first In site, In(1) is bonded in a 5-coordinate geometry to one K(4), one In(1), one Si(1), one Si(2), and one Si(3) atom. In the second In site, In(2) is bonded in a 5-coordinate geometry to one K(4), one In(2), one Si(4), one Si(5), and one Si(6) atom. In the third In site, In(3) is bonded in a 5-coordinate geometry to one K(4), one In(4), one Si(2), one Si(4), and one Si(7) atom. In the fourth In site, In(4) is bonded in a 5-coordinate geometry to one K(4), one In(3), one Si(1), one Si(5), and one Si(8) atom. In the fifth In site, In(5) is bonded to two equivalent K(2), one Si(3), one Si(8), and two equivalent Si(2) atoms to form distorted corner-sharing InK2Si4 tetrahedra. There are ten inequivalent Si sites. In the first Si site, Si(1) is bonded in a 6-coordinate geometry to one K(1), one K(3), one In(1), one In(4), one Si(1), and one Si(9) atom. In the second Si site, Si(2) is bonded in a 7-coordinate geometry to one K(1), one K(3), one K(4), one In(1), one In(3), one In(5), and one Si(5) atom. In the third Si site, Si(3) is bonded in a 7-coordinate geometry to one K(4), two equivalent K(2), one In(5), two equivalent In(1), and one Si(7) atom. In the fourth Si site, Si(4) is bonded in a 6-coordinate geometry to one K(1), one K(3), one In(2), one In(3), one Si(4), and one Si(9) atom. In the fifth Si site, Si(5) is bonded in a 6-coordinate geometry to one K(1), one K(3), one In(2), one In(4), one Si(10), and one Si(2) atom. In the sixth Si site, Si(6) is bonded in a 6-coordinate geometry to two equivalent K(2), two equivalent In(2), one Si(10), and one Si(8) atom. In the seventh Si site, Si(7) is bonded in a 6-coordinate geometry to two equivalent K(2), two equivalent In(3), one Si(10), and one Si(3) atom. In the eighth Si site, Si(8) is bonded in a 7-coordinate geometry to one K(4), two equivalent K(2), one In(5), two equivalent In(4), and one Si(6) atom. In the ninth Si site, Si(9) is bonded in a tetrahedral geometry to two equivalent Si(1) and two equivalent Si(4) atoms. In the tenth Si site, Si(10) is bonded in a tetrahedral geometry to one Si(6), one Si(7), and two equivalent Si(5) atoms. is represented by the CIF card [CIF]
data_K4In9Si14
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.229
_cell_length_b   11.229
_cell_length_c   11.000
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.190
_symmetry_Int_Tables_number   1
_cell_volume   1387.071
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.752  0.500  0.250  1.0
  K  K1  1  0.500  0.752  0.750  1.0
  K  K2  1  0.000  0.000  0.500  1.0
  K  K3  1  0.248  0.500  0.250  1.0
  K  K4  1  0.500  0.248  0.750  1.0
  K  K5  1  0.000  0.000  0.000  1.0
  K  K6  1  0.500  0.000  0.250  1.0
  K  K7  1  0.000  0.500  0.750  1.0
  In  In8  1  0.673  0.822  0.426  1.0
  In  In9  1  0.324  0.180  0.074  1.0
  In  In10  1  0.324  0.180  0.426  1.0
  In  In11  1  0.673  0.822  0.074  1.0
  In  In12  1  0.673  0.180  0.075  1.0
  In  In13  1  0.325  0.822  0.426  1.0
  In  In14  1  0.325  0.822  0.074  1.0
  In  In15  1  0.673  0.180  0.425  1.0
  In  In16  1  0.822  0.673  0.926  1.0
  In  In17  1  0.180  0.324  0.574  1.0
  In  In18  1  0.180  0.324  0.926  1.0
  In  In19  1  0.822  0.673  0.574  1.0
  In  In20  1  0.180  0.673  0.575  1.0
  In  In21  1  0.822  0.325  0.926  1.0
  In  In22  1  0.822  0.325  0.574  1.0
  In  In23  1  0.180  0.673  0.925  1.0
  In  In24  1  0.751  0.000  0.750  1.0
  In  In25  1  0.000  0.751  0.250  1.0
  Si  Si26  1  0.498  0.669  0.360  1.0
  Si  Si27  1  0.595  0.002  0.566  1.0
  Si  Si28  1  0.817  0.904  0.250  1.0
  Si  Si29  1  0.499  0.331  0.141  1.0
  Si  Si30  1  0.384  0.002  0.925  1.0
  Si  Si31  1  0.174  0.116  0.250  1.0
  Si  Si32  1  0.499  0.331  0.359  1.0
  Si  Si33  1  0.384  0.002  0.575  1.0
  Si  Si34  1  0.498  0.669  0.140  1.0
  Si  Si35  1  0.595  0.002  0.934  1.0
  Si  Si36  1  0.825  0.117  0.250  1.0
  Si  Si37  1  0.183  0.904  0.250  1.0
  Si  Si38  1  0.669  0.498  0.860  1.0
  Si  Si39  1  0.002  0.595  0.066  1.0
  Si  Si40  1  0.904  0.817  0.750  1.0
  Si  Si41  1  0.331  0.499  0.641  1.0
  Si  Si42  1  0.002  0.384  0.425  1.0
  Si  Si43  1  0.116  0.174  0.750  1.0
  Si  Si44  1  0.331  0.499  0.859  1.0
  Si  Si45  1  0.002  0.384  0.075  1.0
  Si  Si46  1  0.669  0.498  0.640  1.0
  Si  Si47  1  0.002  0.595  0.434  1.0
  Si  Si48  1  0.117  0.825  0.750  1.0
  Si  Si49  1  0.904  0.183  0.750  1.0
  Si  Si50  1  0.500  0.500  0.500  1.0
  Si  Si51  1  0.249  0.000  0.750  1.0
  Si  Si52  1  0.000  0.249  0.250  1.0
  Si  Si53  1  0.500  0.500  0.000  1.0
[/CIF]
.
The crystal structure described by K4In9Si14 crystallizes in the orthorhombic Ama2 space group. There are four inequivalent K sites. In the first K site, K(1) is bonded in a 8-coordinate geometry to two equivalent Si(1), two equivalent Si(2), two equivalent Si(4), and two equivalent Si(5) atoms. In the second K site, K(2) is bonded in a 10-coordinate geometry to two equivalent In(5), two equivalent Si(3), two equivalent Si(6), two equivalent Si(7), and two equivalent Si(8) atoms. In the third K site, K(3) is bonded in a 8-coordinate geometry to two equivalent Si(1), two equivalent Si(2), two equivalent Si(4), and two equivalent Si(5) atoms. In the fourth K site, K(4) is bonded in a 8-coordinate geometry to two equivalent In(1), two equivalent In(2), two equivalent In(3), two equivalent In(4), one Si(3), one Si(8), and two equivalent Si(2) atoms. There are five inequivalent In sites. In the first In site, In(1) is bonded in a 5-coordinate geometry to one K(4), one In(1), one Si(1), one Si(2), and one Si(3) atom. In the second In site, In(2) is bonded in a 5-coordinate geometry to one K(4), one In(2), one Si(4), one Si(5), and one Si(6) atom. In the third In site, In(3) is bonded in a 5-coordinate geometry to one K(4), one In(4), one Si(2), one Si(4), and one Si(7) atom. In the fourth In site, In(4) is bonded in a 5-coordinate geometry to one K(4), one In(3), one Si(1), one Si(5), and one Si(8) atom. In the fifth In site, In(5) is bonded to two equivalent K(2), one Si(3), one Si(8), and two equivalent Si(2) atoms to form distorted corner-sharing InK2Si4 tetrahedra. There are ten inequivalent Si sites. In the first Si site, Si(1) is bonded in a 6-coordinate geometry to one K(1), one K(3), one In(1), one In(4), one Si(1), and one Si(9) atom. In the second Si site, Si(2) is bonded in a 7-coordinate geometry to one K(1), one K(3), one K(4), one In(1), one In(3), one In(5), and one Si(5) atom. In the third Si site, Si(3) is bonded in a 7-coordinate geometry to one K(4), two equivalent K(2), one In(5), two equivalent In(1), and one Si(7) atom. In the fourth Si site, Si(4) is bonded in a 6-coordinate geometry to one K(1), one K(3), one In(2), one In(3), one Si(4), and one Si(9) atom. In the fifth Si site, Si(5) is bonded in a 6-coordinate geometry to one K(1), one K(3), one In(2), one In(4), one Si(10), and one Si(2) atom. In the sixth Si site, Si(6) is bonded in a 6-coordinate geometry to two equivalent K(2), two equivalent In(2), one Si(10), and one Si(8) atom. In the seventh Si site, Si(7) is bonded in a 6-coordinate geometry to two equivalent K(2), two equivalent In(3), one Si(10), and one Si(3) atom. In the eighth Si site, Si(8) is bonded in a 7-coordinate geometry to one K(4), two equivalent K(2), one In(5), two equivalent In(4), and one Si(6) atom. In the ninth Si site, Si(9) is bonded in a tetrahedral geometry to two equivalent Si(1) and two equivalent Si(4) atoms. In the tenth Si site, Si(10) is bonded in a tetrahedral geometry to one Si(6), one Si(7), and two equivalent Si(5) atoms. is represented by the CIF card [CIF]
data_K4In9Si14
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.229
_cell_length_b   11.229
_cell_length_c   11.000
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.190
_symmetry_Int_Tables_number   1
_cell_volume   1387.071
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.752  0.500  0.250  1.0
  K  K1  1  0.500  0.752  0.750  1.0
  K  K2  1  0.000  0.000  0.500  1.0
  K  K3  1  0.248  0.500  0.250  1.0
  K  K4  1  0.500  0.248  0.750  1.0
  K  K5  1  0.000  0.000  0.000  1.0
  K  K6  1  0.500  0.000  0.250  1.0
  K  K7  1  0.000  0.500  0.750  1.0
  In  In8  1  0.673  0.822  0.426  1.0
  In  In9  1  0.324  0.180  0.074  1.0
  In  In10  1  0.324  0.180  0.426  1.0
  In  In11  1  0.673  0.822  0.074  1.0
  In  In12  1  0.673  0.180  0.075  1.0
  In  In13  1  0.325  0.822  0.426  1.0
  In  In14  1  0.325  0.822  0.074  1.0
  In  In15  1  0.673  0.180  0.425  1.0
  In  In16  1  0.822  0.673  0.926  1.0
  In  In17  1  0.180  0.324  0.574  1.0
  In  In18  1  0.180  0.324  0.926  1.0
  In  In19  1  0.822  0.673  0.574  1.0
  In  In20  1  0.180  0.673  0.575  1.0
  In  In21  1  0.822  0.325  0.926  1.0
  In  In22  1  0.822  0.325  0.574  1.0
  In  In23  1  0.180  0.673  0.925  1.0
  In  In24  1  0.751  0.000  0.750  1.0
  In  In25  1  0.000  0.751  0.250  1.0
  Si  Si26  1  0.498  0.669  0.360  1.0
  Si  Si27  1  0.595  0.002  0.566  1.0
  Si  Si28  1  0.817  0.904  0.250  1.0
  Si  Si29  1  0.499  0.331  0.141  1.0
  Si  Si30  1  0.384  0.002  0.925  1.0
  Si  Si31  1  0.174  0.116  0.250  1.0
  Si  Si32  1  0.499  0.331  0.359  1.0
  Si  Si33  1  0.384  0.002  0.575  1.0
  Si  Si34  1  0.498  0.669  0.140  1.0
  Si  Si35  1  0.595  0.002  0.934  1.0
  Si  Si36  1  0.825  0.117  0.250  1.0
  Si  Si37  1  0.183  0.904  0.250  1.0
  Si  Si38  1  0.669  0.498  0.860  1.0
  Si  Si39  1  0.002  0.595  0.066  1.0
  Si  Si40  1  0.904  0.817  0.750  1.0
  Si  Si41  1  0.331  0.499  0.641  1.0
  Si  Si42  1  0.002  0.384  0.425  1.0
  Si  Si43  1  0.116  0.174  0.750  1.0
  Si  Si44  1  0.331  0.499  0.859  1.0
  Si  Si45  1  0.002  0.384  0.075  1.0
  Si  Si46  1  0.669  0.498  0.640  1.0
  Si  Si47  1  0.002  0.595  0.434  1.0
  Si  Si48  1  0.117  0.825  0.750  1.0
  Si  Si49  1  0.904  0.183  0.750  1.0
  Si  Si50  1  0.500  0.500  0.500  1.0
  Si  Si51  1  0.249  0.000  0.750  1.0
  Si  Si52  1  0.000  0.249  0.250  1.0
  Si  Si53  1  0.500  0.500  0.000  1.0
[/CIF]
.