The material described by Gd2Si2O7 crystallizes in the monoclinic P2_1/c space group. There are two inequivalent Gd sites. In the first Gd site, Gd(1) is bonded in a 7-coordinate geometry to one O(1), one O(2), one O(3), one O(4), one O(5), one O(6), and one O(7) atom. In the second Gd site, Gd(2) is bonded in a 8-coordinate geometry to one O(1), one O(2), one O(3), one O(4), two equivalent O(6), and two equivalent O(7) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(4), one O(5), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(2), one O(3), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. There are seven inequivalent O sites. In the first O site, O(5) is bonded in a distorted bent 120 degrees geometry to one Gd(1), one Si(1), and one Si(2) atom. In the second O site, O(6) is bonded to one Gd(1), two equivalent Gd(2), and one Si(2) atom to form distorted edge-sharing OGd3Si tetrahedra. In the third O site, O(7) is bonded in a 4-coordinate geometry to one Gd(1), two equivalent Gd(2), and one Si(1) atom. In the fourth O site, O(1) is bonded in a distorted trigonal planar geometry to one Gd(1), one Gd(2), and one Si(1) atom. In the fifth O site, O(2) is bonded in a 3-coordinate geometry to one Gd(1), one Gd(2), and one Si(2) atom. In the sixth O site, O(3) is bonded in a distorted trigonal non-coplanar geometry to one Gd(1), one Gd(2), and one Si(2) atom. In the seventh O site, O(4) is bonded in a distorted single-bond geometry to one Gd(1), one Gd(2), and one Si(1) atom. is represented by the CIF card [CIF]
data_Gd2Si2O7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.749
_cell_length_b   6.623
_cell_length_c   12.729
_cell_angle_alpha   71.844
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   540.586
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Gd  Gd0  1  0.830  0.158  0.151  1.0
  Gd  Gd1  1  0.330  0.842  0.349  1.0
  Gd  Gd2  1  0.170  0.842  0.849  1.0
  Gd  Gd3  1  0.670  0.158  0.651  1.0
  Gd  Gd4  1  0.611  0.472  0.863  1.0
  Gd  Gd5  1  0.111  0.528  0.637  1.0
  Gd  Gd6  1  0.389  0.528  0.137  1.0
  Gd  Gd7  1  0.889  0.472  0.363  1.0
  Si  Si8  1  0.918  0.711  0.111  1.0
  Si  Si9  1  0.418  0.289  0.389  1.0
  Si  Si10  1  0.082  0.289  0.889  1.0
  Si  Si11  1  0.582  0.711  0.611  1.0
  Si  Si12  1  0.671  0.897  0.915  1.0
  Si  Si13  1  0.171  0.103  0.585  1.0
  Si  Si14  1  0.329  0.103  0.085  1.0
  Si  Si15  1  0.829  0.897  0.415  1.0
  O  O16  1  0.105  0.664  0.043  1.0
  O  O17  1  0.605  0.336  0.457  1.0
  O  O18  1  0.895  0.336  0.957  1.0
  O  O19  1  0.395  0.664  0.543  1.0
  O  O20  1  0.831  0.783  0.854  1.0
  O  O21  1  0.331  0.217  0.646  1.0
  O  O22  1  0.169  0.217  0.146  1.0
  O  O23  1  0.669  0.783  0.354  1.0
  O  O24  1  0.595  0.128  0.839  1.0
  O  O25  1  0.095  0.872  0.661  1.0
  O  O26  1  0.405  0.872  0.161  1.0
  O  O27  1  0.905  0.128  0.339  1.0
  O  O28  1  0.981  0.801  0.212  1.0
  O  O29  1  0.481  0.199  0.288  1.0
  O  O30  1  0.019  0.199  0.788  1.0
  O  O31  1  0.519  0.801  0.712  1.0
  O  O32  1  0.722  0.908  0.532  1.0
  O  O33  1  0.222  0.092  0.968  1.0
  O  O34  1  0.278  0.092  0.468  1.0
  O  O35  1  0.778  0.908  0.032  1.0
  O  O36  1  0.015  0.725  0.450  1.0
  O  O37  1  0.515  0.275  0.050  1.0
  O  O38  1  0.985  0.275  0.550  1.0
  O  O39  1  0.485  0.725  0.950  1.0
  O  O40  1  0.724  0.502  0.668  1.0
  O  O41  1  0.224  0.498  0.832  1.0
  O  O42  1  0.276  0.498  0.332  1.0
  O  O43  1  0.776  0.502  0.168  1.0
[/CIF]
.
The material described by Gd2Si2O7 crystallizes in the monoclinic P2_1/c space group. There are two inequivalent Gd sites. In the first Gd site, Gd(1) is bonded in a 7-coordinate geometry to one O(1), one O(2), one O(3), one O(4), one O(5), one O(6), and one O(7) atom. In the second Gd site, Gd(2) is bonded in a 8-coordinate geometry to one O(1), one O(2), one O(3), one O(4), two equivalent O(6), and two equivalent O(7) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(4), one O(5), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(2), one O(3), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. There are seven inequivalent O sites. In the first O site, O(5) is bonded in a distorted bent 120 degrees geometry to one Gd(1), one Si(1), and one Si(2) atom. In the second O site, O(6) is bonded to one Gd(1), two equivalent Gd(2), and one Si(2) atom to form distorted edge-sharing OGd3Si tetrahedra. In the third O site, O(7) is bonded in a 4-coordinate geometry to one Gd(1), two equivalent Gd(2), and one Si(1) atom. In the fourth O site, O(1) is bonded in a distorted trigonal planar geometry to one Gd(1), one Gd(2), and one Si(1) atom. In the fifth O site, O(2) is bonded in a 3-coordinate geometry to one Gd(1), one Gd(2), and one Si(2) atom. In the sixth O site, O(3) is bonded in a distorted trigonal non-coplanar geometry to one Gd(1), one Gd(2), and one Si(2) atom. In the seventh O site, O(4) is bonded in a distorted single-bond geometry to one Gd(1), one Gd(2), and one Si(1) atom. is represented by the CIF card [CIF]
data_Gd2Si2O7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.749
_cell_length_b   6.623
_cell_length_c   12.729
_cell_angle_alpha   71.844
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   540.586
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Gd  Gd0  1  0.830  0.158  0.151  1.0
  Gd  Gd1  1  0.330  0.842  0.349  1.0
  Gd  Gd2  1  0.170  0.842  0.849  1.0
  Gd  Gd3  1  0.670  0.158  0.651  1.0
  Gd  Gd4  1  0.611  0.472  0.863  1.0
  Gd  Gd5  1  0.111  0.528  0.637  1.0
  Gd  Gd6  1  0.389  0.528  0.137  1.0
  Gd  Gd7  1  0.889  0.472  0.363  1.0
  Si  Si8  1  0.918  0.711  0.111  1.0
  Si  Si9  1  0.418  0.289  0.389  1.0
  Si  Si10  1  0.082  0.289  0.889  1.0
  Si  Si11  1  0.582  0.711  0.611  1.0
  Si  Si12  1  0.671  0.897  0.915  1.0
  Si  Si13  1  0.171  0.103  0.585  1.0
  Si  Si14  1  0.329  0.103  0.085  1.0
  Si  Si15  1  0.829  0.897  0.415  1.0
  O  O16  1  0.105  0.664  0.043  1.0
  O  O17  1  0.605  0.336  0.457  1.0
  O  O18  1  0.895  0.336  0.957  1.0
  O  O19  1  0.395  0.664  0.543  1.0
  O  O20  1  0.831  0.783  0.854  1.0
  O  O21  1  0.331  0.217  0.646  1.0
  O  O22  1  0.169  0.217  0.146  1.0
  O  O23  1  0.669  0.783  0.354  1.0
  O  O24  1  0.595  0.128  0.839  1.0
  O  O25  1  0.095  0.872  0.661  1.0
  O  O26  1  0.405  0.872  0.161  1.0
  O  O27  1  0.905  0.128  0.339  1.0
  O  O28  1  0.981  0.801  0.212  1.0
  O  O29  1  0.481  0.199  0.288  1.0
  O  O30  1  0.019  0.199  0.788  1.0
  O  O31  1  0.519  0.801  0.712  1.0
  O  O32  1  0.722  0.908  0.532  1.0
  O  O33  1  0.222  0.092  0.968  1.0
  O  O34  1  0.278  0.092  0.468  1.0
  O  O35  1  0.778  0.908  0.032  1.0
  O  O36  1  0.015  0.725  0.450  1.0
  O  O37  1  0.515  0.275  0.050  1.0
  O  O38  1  0.985  0.275  0.550  1.0
  O  O39  1  0.485  0.725  0.950  1.0
  O  O40  1  0.724  0.502  0.668  1.0
  O  O41  1  0.224  0.498  0.832  1.0
  O  O42  1  0.276  0.498  0.332  1.0
  O  O43  1  0.776  0.502  0.168  1.0
[/CIF]
.