The compound described by Rb5SiHO5 crystallizes in the monoclinic C2/m space group. There are four inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 7-coordinate geometry to two equivalent H(1), one O(3), two equivalent O(1), and two equivalent O(2) atoms. In the second Rb site, Rb(2) is bonded in a 8-coordinate geometry to two equivalent H(1), one O(2), one O(3), two equivalent O(1), and two equivalent O(4) atoms. In the third Rb site, Rb(3) is bonded in a 5-coordinate geometry to one O(3) and four equivalent O(4) atoms. In the fourth Rb site, Rb(4) is bonded in a 6-coordinate geometry to two equivalent O(3) and four equivalent O(4) atoms. Si(1) is bonded in a tetrahedral geometry to one O(2), one O(3), and two equivalent O(4) atoms. H(1) is bonded in a single-bond geometry to two equivalent Rb(1), four equivalent Rb(2), and one O(1) atom. There are four inequivalent O sites. In the first O site, O(4) is bonded in a distorted single-bond geometry to two equivalent Rb(2), two equivalent Rb(3), two equivalent Rb(4), and one Si(1) atom. In the second O site, O(1) is bonded in a single-bond geometry to two equivalent Rb(1), four equivalent Rb(2), and one H(1) atom. In the third O site, O(2) is bonded in a distorted single-bond geometry to two equivalent Rb(1), two equivalent Rb(2), and one Si(1) atom. In the fourth O site, O(3) is bonded in a distorted single-bond geometry to one Rb(1), one Rb(3), two equivalent Rb(2), two equivalent Rb(4), and one Si(1) atom. is represented by the CIF card [CIF]
data_Rb5SiHO5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.664
_cell_length_b   6.664
_cell_length_c   12.179
_cell_angle_alpha   80.622
_cell_angle_beta   80.622
_cell_angle_gamma   111.583
_symmetry_Int_Tables_number   1
_cell_volume   481.356
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Rb  Rb0  1  0.267  0.267  0.968  1.0
  Rb  Rb1  1  0.614  0.093  0.802  1.0
  Rb  Rb2  1  0.093  0.614  0.802  1.0
  Rb  Rb3  1  0.787  0.787  0.602  1.0
  Rb  Rb4  1  0.694  0.306  0.500  1.0
  Rb  Rb5  1  0.306  0.694  0.500  1.0
  Rb  Rb6  1  0.213  0.213  0.398  1.0
  Rb  Rb7  1  0.907  0.386  0.198  1.0
  Rb  Rb8  1  0.386  0.907  0.198  1.0
  Rb  Rb9  1  0.733  0.733  0.032  1.0
  Si  Si10  1  0.170  0.170  0.695  1.0
  Si  Si11  1  0.830  0.830  0.305  1.0
  H  H12  1  0.783  0.217  0.000  1.0
  H  H13  1  0.217  0.783  0.000  1.0
  O  O14  1  0.695  0.305  0.000  1.0
  O  O15  1  0.305  0.695  0.000  1.0
  O  O16  1  0.021  0.021  0.827  1.0
  O  O17  1  0.390  0.390  0.700  1.0
  O  O18  1  0.253  0.006  0.625  1.0
  O  O19  1  0.006  0.253  0.625  1.0
  O  O20  1  0.994  0.747  0.375  1.0
  O  O21  1  0.747  0.994  0.375  1.0
  O  O22  1  0.610  0.610  0.300  1.0
  O  O23  1  0.979  0.979  0.173  1.0
[/CIF]
.
The compound described by Rb5SiHO5 crystallizes in the monoclinic C2/m space group. There are four inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 7-coordinate geometry to two equivalent H(1), one O(3), two equivalent O(1), and two equivalent O(2) atoms. In the second Rb site, Rb(2) is bonded in a 8-coordinate geometry to two equivalent H(1), one O(2), one O(3), two equivalent O(1), and two equivalent O(4) atoms. In the third Rb site, Rb(3) is bonded in a 5-coordinate geometry to one O(3) and four equivalent O(4) atoms. In the fourth Rb site, Rb(4) is bonded in a 6-coordinate geometry to two equivalent O(3) and four equivalent O(4) atoms. Si(1) is bonded in a tetrahedral geometry to one O(2), one O(3), and two equivalent O(4) atoms. H(1) is bonded in a single-bond geometry to two equivalent Rb(1), four equivalent Rb(2), and one O(1) atom. There are four inequivalent O sites. In the first O site, O(4) is bonded in a distorted single-bond geometry to two equivalent Rb(2), two equivalent Rb(3), two equivalent Rb(4), and one Si(1) atom. In the second O site, O(1) is bonded in a single-bond geometry to two equivalent Rb(1), four equivalent Rb(2), and one H(1) atom. In the third O site, O(2) is bonded in a distorted single-bond geometry to two equivalent Rb(1), two equivalent Rb(2), and one Si(1) atom. In the fourth O site, O(3) is bonded in a distorted single-bond geometry to one Rb(1), one Rb(3), two equivalent Rb(2), two equivalent Rb(4), and one Si(1) atom. is represented by the CIF card [CIF]
data_Rb5SiHO5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.664
_cell_length_b   6.664
_cell_length_c   12.179
_cell_angle_alpha   80.622
_cell_angle_beta   80.622
_cell_angle_gamma   111.583
_symmetry_Int_Tables_number   1
_cell_volume   481.356
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Rb  Rb0  1  0.267  0.267  0.968  1.0
  Rb  Rb1  1  0.614  0.093  0.802  1.0
  Rb  Rb2  1  0.093  0.614  0.802  1.0
  Rb  Rb3  1  0.787  0.787  0.602  1.0
  Rb  Rb4  1  0.694  0.306  0.500  1.0
  Rb  Rb5  1  0.306  0.694  0.500  1.0
  Rb  Rb6  1  0.213  0.213  0.398  1.0
  Rb  Rb7  1  0.907  0.386  0.198  1.0
  Rb  Rb8  1  0.386  0.907  0.198  1.0
  Rb  Rb9  1  0.733  0.733  0.032  1.0
  Si  Si10  1  0.170  0.170  0.695  1.0
  Si  Si11  1  0.830  0.830  0.305  1.0
  H  H12  1  0.783  0.217  0.000  1.0
  H  H13  1  0.217  0.783  0.000  1.0
  O  O14  1  0.695  0.305  0.000  1.0
  O  O15  1  0.305  0.695  0.000  1.0
  O  O16  1  0.021  0.021  0.827  1.0
  O  O17  1  0.390  0.390  0.700  1.0
  O  O18  1  0.253  0.006  0.625  1.0
  O  O19  1  0.006  0.253  0.625  1.0
  O  O20  1  0.994  0.747  0.375  1.0
  O  O21  1  0.747  0.994  0.375  1.0
  O  O22  1  0.610  0.610  0.300  1.0
  O  O23  1  0.979  0.979  0.173  1.0
[/CIF]
.