The material described by SiO2 is quartz (beta) structured and crystallizes in the hexagonal P6_422 space group. Si(1) is bonded to four equivalent O(1) atoms to form corner-sharing SiO4 tetrahedra. O(1) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.061
_cell_length_b   5.061
_cell_length_c   5.541
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   122.896
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.000  0.500  0.333  1.0
  Si  Si1  1  0.500  0.500  0.667  1.0
  Si  Si2  1  0.500  0.000  0.000  1.0
  O  O3  1  0.583  0.791  0.833  1.0
  O  O4  1  0.791  0.583  0.500  1.0
  O  O5  1  0.791  0.209  0.167  1.0
  O  O6  1  0.417  0.209  0.833  1.0
  O  O7  1  0.209  0.417  0.500  1.0
  O  O8  1  0.209  0.791  0.167  1.0
[/CIF]
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The material described by SiO2 is quartz (beta) structured and crystallizes in the hexagonal P6_422 space group. Si(1) is bonded to four equivalent O(1) atoms to form corner-sharing SiO4 tetrahedra. O(1) is bonded in a bent 150 degrees geometry to two equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.061
_cell_length_b   5.061
_cell_length_c   5.541
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   122.896
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.000  0.500  0.333  1.0
  Si  Si1  1  0.500  0.500  0.667  1.0
  Si  Si2  1  0.500  0.000  0.000  1.0
  O  O3  1  0.583  0.791  0.833  1.0
  O  O4  1  0.791  0.583  0.500  1.0
  O  O5  1  0.791  0.209  0.167  1.0
  O  O6  1  0.417  0.209  0.833  1.0
  O  O7  1  0.209  0.417  0.500  1.0
  O  O8  1  0.209  0.791  0.167  1.0
[/CIF]
.