The material described by Ho3GaO6 crystallizes in the orthorhombic Cmc2_1 space group. There are two inequivalent Ho sites. In the first Ho site, Ho(1) is bonded to one O(1), two equivalent O(4), and four equivalent O(3) atoms to form distorted HoO7 pentagonal bipyramids that share  a cornercorner with one Ga(1)O4 tetrahedra, edges with two equivalent Ho(1)O7 pentagonal bipyramids, and  an edgeedge with one Ga(1)O4 tetrahedra. In the second Ho site, Ho(2) is bonded in a 7-coordinate geometry to one O(1), two equivalent O(2), two equivalent O(3), and two equivalent O(4) atoms. Ga(1) is bonded to one O(1), one O(2), and two equivalent O(4) atoms to form GaO4 tetrahedra that share  a cornercorner with one Ho(1)O7 pentagonal bipyramid and  an edgeedge with one Ho(1)O7 pentagonal bipyramid. There are four inequivalent O sites. In the first O site, O(1) is bonded to one Ho(1), two equivalent Ho(2), and one Ga(1) atom to form distorted OHo3Ga tetrahedra that share corners with eight equivalent O(3)Ho4 tetrahedra,  a cornercorner with one O(2)Ho4Ga trigonal bipyramid, corners with four equivalent O(4)Ho3Ga trigonal pyramids, edges with two equivalent O(2)Ho4Ga trigonal bipyramids, and edges with two equivalent O(4)Ho3Ga trigonal pyramids. In the second O site, O(2) is bonded to four equivalent Ho(2) and one Ga(1) atom to form distorted OHo4Ga trigonal bipyramids that share  a cornercorner with one O(1)Ho3Ga tetrahedra, corners with four equivalent O(3)Ho4 tetrahedra, corners with six equivalent O(4)Ho3Ga trigonal pyramids, edges with two equivalent O(1)Ho3Ga tetrahedra, edges with two equivalent O(3)Ho4 tetrahedra, edges with two equivalent O(2)Ho4Ga trigonal bipyramids, and edges with two equivalent O(4)Ho3Ga trigonal pyramids. In the third O site, O(3) is bonded to two equivalent Ho(1) and two equivalent Ho(2) atoms to form OHo4 tetrahedra that share corners with two equivalent O(3)Ho4 tetrahedra, corners with four equivalent O(1)Ho3Ga tetrahedra, corners with two equivalent O(2)Ho4Ga trigonal bipyramids, corners with six equivalent O(4)Ho3Ga trigonal pyramids, edges with three equivalent O(3)Ho4 tetrahedra,  an edgeedge with one O(2)Ho4Ga trigonal bipyramid, and  an edgeedge with one O(4)Ho3Ga trigonal pyramid. In the fourth O site, O(4) is bonded to one Ho(1), two equivalent Ho(2), and one Ga(1) atom to form distorted OHo3Ga trigonal pyramids that share corners with two equivalent O(1)Ho3Ga tetrahedra, corners with six equivalent O(3)Ho4 tetrahedra, corners with three equivalent O(2)Ho4Ga trigonal bipyramids, corners with two equivalent O(4)Ho3Ga trigonal pyramids,  an edgeedge with one O(1)Ho3Ga tetrahedra,  an edgeedge with one O(3)Ho4 tetrahedra,  an edgeedge with one O(2)Ho4Ga trigonal bipyramid, and  an edgeedge with one O(4)Ho3Ga trigonal pyramid. is represented by the CIF file [CIF]
data_Ho3GaO6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.041
_cell_length_b   7.041
_cell_length_c   5.377
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   102.854
_symmetry_Int_Tables_number   1
_cell_volume   259.861
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.398  0.602  0.928  1.0
  Ho  Ho1  1  0.602  0.398  0.428  1.0
  Ho  Ho2  1  0.299  0.088  0.976  1.0
  Ho  Ho3  1  0.701  0.912  0.476  1.0
  Ho  Ho4  1  0.912  0.701  0.976  1.0
  Ho  Ho5  1  0.088  0.299  0.476  1.0
  Ga  Ga6  1  0.193  0.807  0.506  1.0
  Ga  Ga7  1  0.807  0.193  0.006  1.0
  O  O8  1  0.216  0.784  0.168  1.0
  O  O9  1  0.784  0.216  0.668  1.0
  O  O10  1  0.038  0.962  0.651  1.0
  O  O11  1  0.962  0.038  0.151  1.0
  O  O12  1  0.357  0.323  0.703  1.0
  O  O13  1  0.643  0.677  0.203  1.0
  O  O14  1  0.677  0.643  0.703  1.0
  O  O15  1  0.323  0.357  0.203  1.0
  O  O16  1  0.894  0.423  0.186  1.0
  O  O17  1  0.106  0.577  0.686  1.0
  O  O18  1  0.577  0.106  0.186  1.0
  O  O19  1  0.423  0.894  0.686  1.0
[/CIF]
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The material described by Ho3GaO6 crystallizes in the orthorhombic Cmc2_1 space group. There are two inequivalent Ho sites. In the first Ho site, Ho(1) is bonded to one O(1), two equivalent O(4), and four equivalent O(3) atoms to form distorted HoO7 pentagonal bipyramids that share  a cornercorner with one Ga(1)O4 tetrahedra, edges with two equivalent Ho(1)O7 pentagonal bipyramids, and  an edgeedge with one Ga(1)O4 tetrahedra. In the second Ho site, Ho(2) is bonded in a 7-coordinate geometry to one O(1), two equivalent O(2), two equivalent O(3), and two equivalent O(4) atoms. Ga(1) is bonded to one O(1), one O(2), and two equivalent O(4) atoms to form GaO4 tetrahedra that share  a cornercorner with one Ho(1)O7 pentagonal bipyramid and  an edgeedge with one Ho(1)O7 pentagonal bipyramid. There are four inequivalent O sites. In the first O site, O(1) is bonded to one Ho(1), two equivalent Ho(2), and one Ga(1) atom to form distorted OHo3Ga tetrahedra that share corners with eight equivalent O(3)Ho4 tetrahedra,  a cornercorner with one O(2)Ho4Ga trigonal bipyramid, corners with four equivalent O(4)Ho3Ga trigonal pyramids, edges with two equivalent O(2)Ho4Ga trigonal bipyramids, and edges with two equivalent O(4)Ho3Ga trigonal pyramids. In the second O site, O(2) is bonded to four equivalent Ho(2) and one Ga(1) atom to form distorted OHo4Ga trigonal bipyramids that share  a cornercorner with one O(1)Ho3Ga tetrahedra, corners with four equivalent O(3)Ho4 tetrahedra, corners with six equivalent O(4)Ho3Ga trigonal pyramids, edges with two equivalent O(1)Ho3Ga tetrahedra, edges with two equivalent O(3)Ho4 tetrahedra, edges with two equivalent O(2)Ho4Ga trigonal bipyramids, and edges with two equivalent O(4)Ho3Ga trigonal pyramids. In the third O site, O(3) is bonded to two equivalent Ho(1) and two equivalent Ho(2) atoms to form OHo4 tetrahedra that share corners with two equivalent O(3)Ho4 tetrahedra, corners with four equivalent O(1)Ho3Ga tetrahedra, corners with two equivalent O(2)Ho4Ga trigonal bipyramids, corners with six equivalent O(4)Ho3Ga trigonal pyramids, edges with three equivalent O(3)Ho4 tetrahedra,  an edgeedge with one O(2)Ho4Ga trigonal bipyramid, and  an edgeedge with one O(4)Ho3Ga trigonal pyramid. In the fourth O site, O(4) is bonded to one Ho(1), two equivalent Ho(2), and one Ga(1) atom to form distorted OHo3Ga trigonal pyramids that share corners with two equivalent O(1)Ho3Ga tetrahedra, corners with six equivalent O(3)Ho4 tetrahedra, corners with three equivalent O(2)Ho4Ga trigonal bipyramids, corners with two equivalent O(4)Ho3Ga trigonal pyramids,  an edgeedge with one O(1)Ho3Ga tetrahedra,  an edgeedge with one O(3)Ho4 tetrahedra,  an edgeedge with one O(2)Ho4Ga trigonal bipyramid, and  an edgeedge with one O(4)Ho3Ga trigonal pyramid. is represented by the CIF file [CIF]
data_Ho3GaO6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.041
_cell_length_b   7.041
_cell_length_c   5.377
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   102.854
_symmetry_Int_Tables_number   1
_cell_volume   259.861
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.398  0.602  0.928  1.0
  Ho  Ho1  1  0.602  0.398  0.428  1.0
  Ho  Ho2  1  0.299  0.088  0.976  1.0
  Ho  Ho3  1  0.701  0.912  0.476  1.0
  Ho  Ho4  1  0.912  0.701  0.976  1.0
  Ho  Ho5  1  0.088  0.299  0.476  1.0
  Ga  Ga6  1  0.193  0.807  0.506  1.0
  Ga  Ga7  1  0.807  0.193  0.006  1.0
  O  O8  1  0.216  0.784  0.168  1.0
  O  O9  1  0.784  0.216  0.668  1.0
  O  O10  1  0.038  0.962  0.651  1.0
  O  O11  1  0.962  0.038  0.151  1.0
  O  O12  1  0.357  0.323  0.703  1.0
  O  O13  1  0.643  0.677  0.203  1.0
  O  O14  1  0.677  0.643  0.703  1.0
  O  O15  1  0.323  0.357  0.203  1.0
  O  O16  1  0.894  0.423  0.186  1.0
  O  O17  1  0.106  0.577  0.686  1.0
  O  O18  1  0.577  0.106  0.186  1.0
  O  O19  1  0.423  0.894  0.686  1.0
[/CIF]
.