The material described by Cs2U(Si2O5)3 crystallizes in the orthorhombic Cmc2_1 space group. There are two inequivalent Cs sites. In the first Cs site, Cs(1) is bonded in a 11-coordinate geometry to one O(8), two equivalent O(10), two equivalent O(2), two equivalent O(4), two equivalent O(7), and two equivalent O(9) atoms. In the second Cs site, Cs(2) is bonded in a 5-coordinate geometry to one O(6), two equivalent O(2), and two equivalent O(4) atoms. U(1) is bonded to one O(1), one O(10), two equivalent O(4), and two equivalent O(7) atoms to form UO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(4)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent Si(3)O4 tetrahedra. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(3), and two equivalent O(2) atoms to form SiO4 tetrahedra that share  a cornercorner with one U(1)O6 octahedra,  a cornercorner with one Si(4)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles are 33°. In the second Si site, Si(2) is bonded to one O(2), one O(4), one O(5), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one U(1)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles are 48°. In the third Si site, Si(3) is bonded to one O(5), one O(7), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one U(1)O6 octahedra,  a cornercorner with one Si(2)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles are 34°. In the fourth Si site, Si(4) is bonded to one O(10), one O(3), and two equivalent O(9) atoms to form SiO4 tetrahedra that share  a cornercorner with one U(1)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and corners with two equivalent Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles are 29°. There are ten inequivalent O sites. In the first O site, O(10) is bonded in a bent 150 degrees geometry to two equivalent Cs(1), one U(1), and one Si(4) atom. In the second O site, O(1) is bonded in a bent 150 degrees geometry to one U(1) and one Si(1) atom. In the third O site, O(2) is bonded in a bent 150 degrees geometry to one Cs(1), one Cs(2), one Si(1), and one Si(2) atom. In the fourth O site, O(3) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(4) atom. In the fifth O site, O(4) is bonded in a 2-coordinate geometry to one Cs(1), one Cs(2), one U(1), and one Si(2) atom. In the sixth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the seventh O site, O(6) is bonded in a distorted bent 150 degrees geometry to one Cs(2) and two equivalent Si(2) atoms. In the eighth O site, O(7) is bonded in a distorted bent 150 degrees geometry to one Cs(1), one U(1), and one Si(3) atom. In the ninth O site, O(8) is bonded in a bent 150 degrees geometry to one Cs(1) and two equivalent Si(3) atoms. In the tenth O site, O(9) is bonded in a bent 150 degrees geometry to one Cs(1), one Si(3), and one Si(4) atom. is represented by the CIF file [CIF]
data_Cs2U(Si2O5)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.085
_cell_length_b   9.085
_cell_length_c   13.704
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   131.897
_symmetry_Int_Tables_number   1
_cell_volume   842.006
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.111  0.889  0.173  1.0
  Cs  Cs1  1  0.889  0.111  0.673  1.0
  Cs  Cs2  1  0.222  0.778  0.868  1.0
  Cs  Cs3  1  0.778  0.222  0.368  1.0
  U  U4  1  0.369  0.631  0.518  1.0
  U  U5  1  0.631  0.369  0.018  1.0
  Si  Si6  1  0.357  0.643  0.250  1.0
  Si  Si7  1  0.643  0.357  0.750  1.0
  Si  Si8  1  0.390  0.020  0.593  1.0
  Si  Si9  1  0.980  0.610  0.593  1.0
  Si  Si10  1  0.610  0.980  0.093  1.0
  Si  Si11  1  0.020  0.390  0.093  1.0
  Si  Si12  1  0.826  0.741  0.443  1.0
  Si  Si13  1  0.259  0.174  0.443  1.0
  Si  Si14  1  0.174  0.259  0.943  1.0
  Si  Si15  1  0.741  0.826  0.943  1.0
  Si  Si16  1  0.547  0.453  0.272  1.0
  Si  Si17  1  0.453  0.547  0.772  1.0
  O  O18  1  0.330  0.670  0.362  1.0
  O  O19  1  0.670  0.330  0.862  1.0
  O  O20  1  0.497  0.859  0.194  1.0
  O  O21  1  0.141  0.503  0.194  1.0
  O  O22  1  0.503  0.141  0.694  1.0
  O  O23  1  0.859  0.497  0.694  1.0
  O  O24  1  0.454  0.546  0.234  1.0
  O  O25  1  0.546  0.454  0.734  1.0
  O  O26  1  0.491  0.942  0.547  1.0
  O  O27  1  0.058  0.509  0.547  1.0
  O  O28  1  0.509  0.058  0.047  1.0
  O  O29  1  0.942  0.491  0.047  1.0
  O  O30  1  0.390  0.157  0.516  1.0
  O  O31  1  0.843  0.610  0.516  1.0
  O  O32  1  0.610  0.843  0.016  1.0
  O  O33  1  0.157  0.390  0.016  1.0
  O  O34  1  0.161  0.839  0.630  1.0
  O  O35  1  0.839  0.161  0.130  1.0
  O  O36  1  0.684  0.772  0.487  1.0
  O  O37  1  0.228  0.316  0.487  1.0
  O  O38  1  0.316  0.228  0.987  1.0
  O  O39  1  0.772  0.684  0.987  1.0
  O  O40  1  0.049  0.951  0.417  1.0
  O  O41  1  0.951  0.049  0.917  1.0
  O  O42  1  0.745  0.620  0.339  1.0
  O  O43  1  0.380  0.255  0.339  1.0
  O  O44  1  0.255  0.380  0.839  1.0
  O  O45  1  0.620  0.745  0.839  1.0
  O  O46  1  0.608  0.392  0.181  1.0
  O  O47  1  0.392  0.608  0.681  1.0
[/CIF]
.
The material described by Cs2U(Si2O5)3 crystallizes in the orthorhombic Cmc2_1 space group. There are two inequivalent Cs sites. In the first Cs site, Cs(1) is bonded in a 11-coordinate geometry to one O(8), two equivalent O(10), two equivalent O(2), two equivalent O(4), two equivalent O(7), and two equivalent O(9) atoms. In the second Cs site, Cs(2) is bonded in a 5-coordinate geometry to one O(6), two equivalent O(2), and two equivalent O(4) atoms. U(1) is bonded to one O(1), one O(10), two equivalent O(4), and two equivalent O(7) atoms to form UO6 octahedra that share  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(4)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent Si(3)O4 tetrahedra. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(3), and two equivalent O(2) atoms to form SiO4 tetrahedra that share  a cornercorner with one U(1)O6 octahedra,  a cornercorner with one Si(4)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles are 33°. In the second Si site, Si(2) is bonded to one O(2), one O(4), one O(5), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one U(1)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles are 48°. In the third Si site, Si(3) is bonded to one O(5), one O(7), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one U(1)O6 octahedra,  a cornercorner with one Si(2)O4 tetrahedra,  a cornercorner with one Si(3)O4 tetrahedra, and  a cornercorner with one Si(4)O4 tetrahedra. The corner-sharing octahedral tilt angles are 34°. In the fourth Si site, Si(4) is bonded to one O(10), one O(3), and two equivalent O(9) atoms to form SiO4 tetrahedra that share  a cornercorner with one U(1)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and corners with two equivalent Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles are 29°. There are ten inequivalent O sites. In the first O site, O(10) is bonded in a bent 150 degrees geometry to two equivalent Cs(1), one U(1), and one Si(4) atom. In the second O site, O(1) is bonded in a bent 150 degrees geometry to one U(1) and one Si(1) atom. In the third O site, O(2) is bonded in a bent 150 degrees geometry to one Cs(1), one Cs(2), one Si(1), and one Si(2) atom. In the fourth O site, O(3) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(4) atom. In the fifth O site, O(4) is bonded in a 2-coordinate geometry to one Cs(1), one Cs(2), one U(1), and one Si(2) atom. In the sixth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the seventh O site, O(6) is bonded in a distorted bent 150 degrees geometry to one Cs(2) and two equivalent Si(2) atoms. In the eighth O site, O(7) is bonded in a distorted bent 150 degrees geometry to one Cs(1), one U(1), and one Si(3) atom. In the ninth O site, O(8) is bonded in a bent 150 degrees geometry to one Cs(1) and two equivalent Si(3) atoms. In the tenth O site, O(9) is bonded in a bent 150 degrees geometry to one Cs(1), one Si(3), and one Si(4) atom. is represented by the CIF file [CIF]
data_Cs2U(Si2O5)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.085
_cell_length_b   9.085
_cell_length_c   13.704
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   131.897
_symmetry_Int_Tables_number   1
_cell_volume   842.006
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.111  0.889  0.173  1.0
  Cs  Cs1  1  0.889  0.111  0.673  1.0
  Cs  Cs2  1  0.222  0.778  0.868  1.0
  Cs  Cs3  1  0.778  0.222  0.368  1.0
  U  U4  1  0.369  0.631  0.518  1.0
  U  U5  1  0.631  0.369  0.018  1.0
  Si  Si6  1  0.357  0.643  0.250  1.0
  Si  Si7  1  0.643  0.357  0.750  1.0
  Si  Si8  1  0.390  0.020  0.593  1.0
  Si  Si9  1  0.980  0.610  0.593  1.0
  Si  Si10  1  0.610  0.980  0.093  1.0
  Si  Si11  1  0.020  0.390  0.093  1.0
  Si  Si12  1  0.826  0.741  0.443  1.0
  Si  Si13  1  0.259  0.174  0.443  1.0
  Si  Si14  1  0.174  0.259  0.943  1.0
  Si  Si15  1  0.741  0.826  0.943  1.0
  Si  Si16  1  0.547  0.453  0.272  1.0
  Si  Si17  1  0.453  0.547  0.772  1.0
  O  O18  1  0.330  0.670  0.362  1.0
  O  O19  1  0.670  0.330  0.862  1.0
  O  O20  1  0.497  0.859  0.194  1.0
  O  O21  1  0.141  0.503  0.194  1.0
  O  O22  1  0.503  0.141  0.694  1.0
  O  O23  1  0.859  0.497  0.694  1.0
  O  O24  1  0.454  0.546  0.234  1.0
  O  O25  1  0.546  0.454  0.734  1.0
  O  O26  1  0.491  0.942  0.547  1.0
  O  O27  1  0.058  0.509  0.547  1.0
  O  O28  1  0.509  0.058  0.047  1.0
  O  O29  1  0.942  0.491  0.047  1.0
  O  O30  1  0.390  0.157  0.516  1.0
  O  O31  1  0.843  0.610  0.516  1.0
  O  O32  1  0.610  0.843  0.016  1.0
  O  O33  1  0.157  0.390  0.016  1.0
  O  O34  1  0.161  0.839  0.630  1.0
  O  O35  1  0.839  0.161  0.130  1.0
  O  O36  1  0.684  0.772  0.487  1.0
  O  O37  1  0.228  0.316  0.487  1.0
  O  O38  1  0.316  0.228  0.987  1.0
  O  O39  1  0.772  0.684  0.987  1.0
  O  O40  1  0.049  0.951  0.417  1.0
  O  O41  1  0.951  0.049  0.917  1.0
  O  O42  1  0.745  0.620  0.339  1.0
  O  O43  1  0.380  0.255  0.339  1.0
  O  O44  1  0.255  0.380  0.839  1.0
  O  O45  1  0.620  0.745  0.839  1.0
  O  O46  1  0.608  0.392  0.181  1.0
  O  O47  1  0.392  0.608  0.681  1.0
[/CIF]
.