The material described by CsEuSiS4 crystallizes in the orthorhombic P2_12_12_1 space group. Cs(1) is bonded in a 8-coordinate geometry to one S(2), two equivalent S(3), two equivalent S(4), and three equivalent S(1) atoms. Eu(1) is bonded in a 7-coordinate geometry to one S(1), two equivalent S(2), two equivalent S(3), and two equivalent S(4) atoms. Si(1) is bonded in a tetrahedral geometry to one S(1), one S(2), one S(3), and one S(4) atom. There are four inequivalent S sites. In the first S site, S(1) is bonded in a 5-coordinate geometry to three equivalent Cs(1), one Eu(1), and one Si(1) atom. In the second S site, S(2) is bonded in a distorted see-saw-like geometry to one Cs(1), two equivalent Eu(1), and one Si(1) atom. In the third S site, S(3) is bonded in a 5-coordinate geometry to two equivalent Cs(1), two equivalent Eu(1), and one Si(1) atom. In the fourth S site, S(4) is bonded in a 5-coordinate geometry to two equivalent Cs(1), two equivalent Eu(1), and one Si(1) atom. is represented by the CIF card [CIF]
data_CsEuSiS4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.559
_cell_length_b   6.858
_cell_length_c   17.797
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   800.551
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.489  0.492  0.967  1.0
  Cs  Cs1  1  0.011  0.508  0.467  1.0
  Cs  Cs2  1  0.989  0.008  0.033  1.0
  Cs  Cs3  1  0.511  0.992  0.533  1.0
  Eu  Eu4  1  0.288  0.468  0.225  1.0
  Eu  Eu5  1  0.212  0.532  0.725  1.0
  Eu  Eu6  1  0.788  0.032  0.775  1.0
  Eu  Eu7  1  0.712  0.968  0.275  1.0
  Si  Si8  1  0.785  0.518  0.165  1.0
  Si  Si9  1  0.715  0.482  0.665  1.0
  Si  Si10  1  0.285  0.982  0.835  1.0
  Si  Si11  1  0.215  0.018  0.335  1.0
  S  S12  1  0.039  0.515  0.093  1.0
  S  S13  1  0.461  0.485  0.593  1.0
  S  S14  1  0.539  0.985  0.907  1.0
  S  S15  1  0.961  0.015  0.407  1.0
  S  S16  1  0.611  0.429  0.776  1.0
  S  S17  1  0.889  0.571  0.276  1.0
  S  S18  1  0.111  0.071  0.224  1.0
  S  S19  1  0.389  0.929  0.724  1.0
  S  S20  1  0.570  0.743  0.144  1.0
  S  S21  1  0.930  0.257  0.644  1.0
  S  S22  1  0.070  0.757  0.856  1.0
  S  S23  1  0.430  0.243  0.356  1.0
  S  S24  1  0.615  0.255  0.155  1.0
  S  S25  1  0.885  0.745  0.655  1.0
  S  S26  1  0.115  0.245  0.845  1.0
  S  S27  1  0.385  0.755  0.345  1.0
[/CIF]
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The material described by CsEuSiS4 crystallizes in the orthorhombic P2_12_12_1 space group. Cs(1) is bonded in a 8-coordinate geometry to one S(2), two equivalent S(3), two equivalent S(4), and three equivalent S(1) atoms. Eu(1) is bonded in a 7-coordinate geometry to one S(1), two equivalent S(2), two equivalent S(3), and two equivalent S(4) atoms. Si(1) is bonded in a tetrahedral geometry to one S(1), one S(2), one S(3), and one S(4) atom. There are four inequivalent S sites. In the first S site, S(1) is bonded in a 5-coordinate geometry to three equivalent Cs(1), one Eu(1), and one Si(1) atom. In the second S site, S(2) is bonded in a distorted see-saw-like geometry to one Cs(1), two equivalent Eu(1), and one Si(1) atom. In the third S site, S(3) is bonded in a 5-coordinate geometry to two equivalent Cs(1), two equivalent Eu(1), and one Si(1) atom. In the fourth S site, S(4) is bonded in a 5-coordinate geometry to two equivalent Cs(1), two equivalent Eu(1), and one Si(1) atom. is represented by the CIF card [CIF]
data_CsEuSiS4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.559
_cell_length_b   6.858
_cell_length_c   17.797
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   800.551
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.489  0.492  0.967  1.0
  Cs  Cs1  1  0.011  0.508  0.467  1.0
  Cs  Cs2  1  0.989  0.008  0.033  1.0
  Cs  Cs3  1  0.511  0.992  0.533  1.0
  Eu  Eu4  1  0.288  0.468  0.225  1.0
  Eu  Eu5  1  0.212  0.532  0.725  1.0
  Eu  Eu6  1  0.788  0.032  0.775  1.0
  Eu  Eu7  1  0.712  0.968  0.275  1.0
  Si  Si8  1  0.785  0.518  0.165  1.0
  Si  Si9  1  0.715  0.482  0.665  1.0
  Si  Si10  1  0.285  0.982  0.835  1.0
  Si  Si11  1  0.215  0.018  0.335  1.0
  S  S12  1  0.039  0.515  0.093  1.0
  S  S13  1  0.461  0.485  0.593  1.0
  S  S14  1  0.539  0.985  0.907  1.0
  S  S15  1  0.961  0.015  0.407  1.0
  S  S16  1  0.611  0.429  0.776  1.0
  S  S17  1  0.889  0.571  0.276  1.0
  S  S18  1  0.111  0.071  0.224  1.0
  S  S19  1  0.389  0.929  0.724  1.0
  S  S20  1  0.570  0.743  0.144  1.0
  S  S21  1  0.930  0.257  0.644  1.0
  S  S22  1  0.070  0.757  0.856  1.0
  S  S23  1  0.430  0.243  0.356  1.0
  S  S24  1  0.615  0.255  0.155  1.0
  S  S25  1  0.885  0.745  0.655  1.0
  S  S26  1  0.115  0.245  0.845  1.0
  S  S27  1  0.385  0.755  0.345  1.0
[/CIF]
.