The crystal structure described by Zn3Si4(WO7)2 crystallizes in the monoclinic C2/c space group. There are two inequivalent W sites. In the first W site, W(1) is bonded to two equivalent O(2), two equivalent O(3), and two equivalent O(4) atoms to form WO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and edges with two equivalent W(2)O6 octahedra. In the second W site, W(2) is bonded to two equivalent O(1), two equivalent O(2), and two equivalent O(4) atoms to form WO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and edges with two equivalent W(1)O6 octahedra. There are two inequivalent Zn sites. In the first Zn site, Zn(1) is bonded in a distorted see-saw-like geometry to one O(1), one O(2), and two equivalent O(7) atoms. In the second Zn site, Zn(2) is bonded in a distorted L-shaped geometry to two equivalent O(3) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(4), one O(5), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one W(1)O6 octahedra,  a cornercorner with one W(2)O6 octahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 41-50°. In the second Si site, Si(2) is bonded to one O(1), one O(3), one O(5), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one W(1)O6 octahedra,  a cornercorner with one W(2)O6 octahedra, and corners with two equivalent Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 54-57°. There are seven inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one W(2), one Zn(1), and one Si(2) atom. In the second O site, O(2) is bonded in a distorted trigonal planar geometry to one W(1), one W(2), and one Zn(1) atom. In the third O site, O(3) is bonded in a 3-coordinate geometry to one W(1), one Zn(2), and one Si(2) atom. In the fourth O site, O(4) is bonded in a 3-coordinate geometry to one W(1), one W(2), and one Si(1) atom. In the fifth O site, O(5) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the sixth O site, O(6) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to two equivalent Zn(1) and one Si(1) atom. is represented by the CIF file [CIF]
data_Zn3Si4(WO7)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.047
_cell_length_b   10.298
_cell_length_c   9.259
_cell_angle_alpha   66.444
_cell_angle_beta   64.246
_cell_angle_gamma   67.002
_symmetry_Int_Tables_number   1
_cell_volume   611.153
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Zn  Zn0  1  0.048  0.875  0.414  1.0
  Zn  Zn1  1  0.337  0.625  0.086  1.0
  Zn  Zn2  1  0.663  0.375  0.914  1.0
  Zn  Zn3  1  0.593  0.250  0.750  1.0
  Zn  Zn4  1  0.952  0.125  0.586  1.0
  Zn  Zn5  1  0.407  0.750  0.250  1.0
  Si  Si6  1  0.484  0.311  0.336  1.0
  Si  Si7  1  0.868  0.811  0.836  1.0
  Si  Si8  1  0.464  0.912  0.811  1.0
  Si  Si9  1  0.812  0.412  0.311  1.0
  Si  Si10  1  0.132  0.189  0.164  1.0
  Si  Si11  1  0.536  0.088  0.189  1.0
  Si  Si12  1  0.188  0.588  0.689  1.0
  Si  Si13  1  0.516  0.689  0.664  1.0
  W  W14  1  0.186  0.250  0.750  1.0
  W  W15  1  0.814  0.750  0.250  1.0
  W  W16  1  0.000  0.000  0.000  1.0
  W  W17  1  0.000  0.500  0.500  1.0
  O  O18  1  0.095  0.639  0.539  1.0
  O  O19  1  0.075  0.604  0.247  1.0
  O  O20  1  0.561  0.911  0.250  1.0
  O  O21  1  0.074  0.104  0.747  1.0
  O  O22  1  0.725  0.650  0.518  1.0
  O  O23  1  0.994  0.356  0.157  1.0
  O  O24  1  0.279  0.411  0.750  1.0
  O  O25  1  0.894  0.850  0.982  1.0
  O  O26  1  0.006  0.644  0.843  1.0
  O  O27  1  0.351  0.679  0.610  1.0
  O  O28  1  0.925  0.396  0.753  1.0
  O  O29  1  0.275  0.350  0.482  1.0
  O  O30  1  0.507  0.144  0.343  1.0
  O  O31  1  0.727  0.139  0.039  1.0
  O  O32  1  0.360  0.179  0.110  1.0
  O  O33  1  0.106  0.150  0.018  1.0
  O  O34  1  0.067  0.081  0.351  1.0
  O  O35  1  0.649  0.321  0.390  1.0
  O  O36  1  0.498  0.419  0.149  1.0
  O  O37  1  0.640  0.821  0.890  1.0
  O  O38  1  0.493  0.856  0.657  1.0
  O  O39  1  0.926  0.896  0.253  1.0
  O  O40  1  0.502  0.581  0.851  1.0
  O  O41  1  0.439  0.089  0.750  1.0
  O  O42  1  0.933  0.919  0.649  1.0
  O  O43  1  0.721  0.589  0.250  1.0
  O  O44  1  0.273  0.861  0.961  1.0
  O  O45  1  0.905  0.361  0.461  1.0
[/CIF]
.
The crystal structure described by Zn3Si4(WO7)2 crystallizes in the monoclinic C2/c space group. There are two inequivalent W sites. In the first W site, W(1) is bonded to two equivalent O(2), two equivalent O(3), and two equivalent O(4) atoms to form WO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and edges with two equivalent W(2)O6 octahedra. In the second W site, W(2) is bonded to two equivalent O(1), two equivalent O(2), and two equivalent O(4) atoms to form WO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and edges with two equivalent W(1)O6 octahedra. There are two inequivalent Zn sites. In the first Zn site, Zn(1) is bonded in a distorted see-saw-like geometry to one O(1), one O(2), and two equivalent O(7) atoms. In the second Zn site, Zn(2) is bonded in a distorted L-shaped geometry to two equivalent O(3) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(4), one O(5), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one W(1)O6 octahedra,  a cornercorner with one W(2)O6 octahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 41-50°. In the second Si site, Si(2) is bonded to one O(1), one O(3), one O(5), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one W(1)O6 octahedra,  a cornercorner with one W(2)O6 octahedra, and corners with two equivalent Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 54-57°. There are seven inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one W(2), one Zn(1), and one Si(2) atom. In the second O site, O(2) is bonded in a distorted trigonal planar geometry to one W(1), one W(2), and one Zn(1) atom. In the third O site, O(3) is bonded in a 3-coordinate geometry to one W(1), one Zn(2), and one Si(2) atom. In the fourth O site, O(4) is bonded in a 3-coordinate geometry to one W(1), one W(2), and one Si(1) atom. In the fifth O site, O(5) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the sixth O site, O(6) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to two equivalent Zn(1) and one Si(1) atom. is represented by the CIF file [CIF]
data_Zn3Si4(WO7)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.047
_cell_length_b   10.298
_cell_length_c   9.259
_cell_angle_alpha   66.444
_cell_angle_beta   64.246
_cell_angle_gamma   67.002
_symmetry_Int_Tables_number   1
_cell_volume   611.153
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Zn  Zn0  1  0.048  0.875  0.414  1.0
  Zn  Zn1  1  0.337  0.625  0.086  1.0
  Zn  Zn2  1  0.663  0.375  0.914  1.0
  Zn  Zn3  1  0.593  0.250  0.750  1.0
  Zn  Zn4  1  0.952  0.125  0.586  1.0
  Zn  Zn5  1  0.407  0.750  0.250  1.0
  Si  Si6  1  0.484  0.311  0.336  1.0
  Si  Si7  1  0.868  0.811  0.836  1.0
  Si  Si8  1  0.464  0.912  0.811  1.0
  Si  Si9  1  0.812  0.412  0.311  1.0
  Si  Si10  1  0.132  0.189  0.164  1.0
  Si  Si11  1  0.536  0.088  0.189  1.0
  Si  Si12  1  0.188  0.588  0.689  1.0
  Si  Si13  1  0.516  0.689  0.664  1.0
  W  W14  1  0.186  0.250  0.750  1.0
  W  W15  1  0.814  0.750  0.250  1.0
  W  W16  1  0.000  0.000  0.000  1.0
  W  W17  1  0.000  0.500  0.500  1.0
  O  O18  1  0.095  0.639  0.539  1.0
  O  O19  1  0.075  0.604  0.247  1.0
  O  O20  1  0.561  0.911  0.250  1.0
  O  O21  1  0.074  0.104  0.747  1.0
  O  O22  1  0.725  0.650  0.518  1.0
  O  O23  1  0.994  0.356  0.157  1.0
  O  O24  1  0.279  0.411  0.750  1.0
  O  O25  1  0.894  0.850  0.982  1.0
  O  O26  1  0.006  0.644  0.843  1.0
  O  O27  1  0.351  0.679  0.610  1.0
  O  O28  1  0.925  0.396  0.753  1.0
  O  O29  1  0.275  0.350  0.482  1.0
  O  O30  1  0.507  0.144  0.343  1.0
  O  O31  1  0.727  0.139  0.039  1.0
  O  O32  1  0.360  0.179  0.110  1.0
  O  O33  1  0.106  0.150  0.018  1.0
  O  O34  1  0.067  0.081  0.351  1.0
  O  O35  1  0.649  0.321  0.390  1.0
  O  O36  1  0.498  0.419  0.149  1.0
  O  O37  1  0.640  0.821  0.890  1.0
  O  O38  1  0.493  0.856  0.657  1.0
  O  O39  1  0.926  0.896  0.253  1.0
  O  O40  1  0.502  0.581  0.851  1.0
  O  O41  1  0.439  0.089  0.750  1.0
  O  O42  1  0.933  0.919  0.649  1.0
  O  O43  1  0.721  0.589  0.250  1.0
  O  O44  1  0.273  0.861  0.961  1.0
  O  O45  1  0.905  0.361  0.461  1.0
[/CIF]
.