The material described by SiC4H8F3 is Indium-like structured and crystallizes in the monoclinic P2_1 space group. The structure is zero-dimensional and consists of two (trifluoromethyl)trimethylsilane molecules. Si(1) is bonded in a tetrahedral geometry to one C(1), one C(2), one C(3), and one C(4) atom. There are four inequivalent C sites. In the first C site, C(1) is bonded in a trigonal planar geometry to one Si(1), one H(1), and one H(8) atom. In the second C site, C(2) is bonded to one Si(1), one F(1), one F(2), and one F(3) atom to form distorted corner-sharing CSiF3 tetrahedra. In the third C site, C(3) is bonded to one Si(1), one H(2), one H(4), and one H(6) atom to form CSiH3 tetrahedra that share  a cornercorner with one C(2)SiF3 tetrahedra and  a cornercorner with one C(4)SiH3 tetrahedra. In the fourth C site, C(4) is bonded to one Si(1), one H(3), one H(5), and one H(7) atom to form CSiH3 tetrahedra that share  a cornercorner with one C(2)SiF3 tetrahedra and  a cornercorner with one C(3)SiH3 tetrahedra. There are eight inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one C(3) atom. In the third H site, H(3) is bonded in a single-bond geometry to one C(4) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one C(3) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one C(4) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one C(3) atom. In the seventh H site, H(7) is bonded in a single-bond geometry to one C(4) atom. In the eighth H site, H(8) is bonded in a single-bond geometry to one C(1) atom. There are three inequivalent F sites. In the first F site, F(1) is bonded in a single-bond geometry to one C(2) atom. In the second F site, F(2) is bonded in a single-bond geometry to one C(2) atom. In the third F site, F(3) is bonded in a single-bond geometry to one C(2) atom. is represented by the CIF card [CIF]
data_SiH8C4F3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.272
_cell_length_b   6.878
_cell_length_c   6.894
_cell_angle_alpha   77.172
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   474.920
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.249  0.198  0.221  1.0
  Si  Si1  1  0.749  0.802  0.779  1.0
  H  H2  1  0.263  0.896  0.518  1.0
  H  H3  1  0.763  0.104  0.482  1.0
  H  H4  1  0.097  0.487  0.180  1.0
  H  H5  1  0.597  0.513  0.820  1.0
  H  H6  1  0.902  0.516  0.818  1.0
  H  H7  1  0.402  0.484  0.182  1.0
  H  H8  1  0.093  0.334  0.426  1.0
  H  H9  1  0.593  0.666  0.574  1.0
  H  H10  1  0.907  0.667  0.573  1.0
  H  H11  1  0.407  0.333  0.427  1.0
  H  H12  1  0.012  0.254  0.231  1.0
  H  H13  1  0.512  0.746  0.769  1.0
  H  H14  1  0.989  0.747  0.769  1.0
  H  H15  1  0.489  0.253  0.231  1.0
  H  H16  1  0.172  0.830  0.311  1.0
  H  H17  1  0.672  0.170  0.689  1.0
  C  C18  1  0.233  0.939  0.361  1.0
  C  C19  1  0.733  0.061  0.639  1.0
  C  C20  1  0.250  0.199  0.938  1.0
  C  C21  1  0.750  0.801  0.062  1.0
  C  C22  1  0.098  0.333  0.267  1.0
  C  C23  1  0.598  0.667  0.733  1.0
  C  C24  1  0.902  0.671  0.732  1.0
  C  C25  1  0.402  0.329  0.268  1.0
  F  F26  1  0.250  0.390  0.820  1.0
  F  F27  1  0.750  0.610  0.180  1.0
  F  F28  1  0.143  0.105  0.878  1.0
  F  F29  1  0.643  0.895  0.122  1.0
  F  F30  1  0.857  0.894  0.123  1.0
  F  F31  1  0.357  0.106  0.877  1.0
[/CIF]
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The material described by SiC4H8F3 is Indium-like structured and crystallizes in the monoclinic P2_1 space group. The structure is zero-dimensional and consists of two (trifluoromethyl)trimethylsilane molecules. Si(1) is bonded in a tetrahedral geometry to one C(1), one C(2), one C(3), and one C(4) atom. There are four inequivalent C sites. In the first C site, C(1) is bonded in a trigonal planar geometry to one Si(1), one H(1), and one H(8) atom. In the second C site, C(2) is bonded to one Si(1), one F(1), one F(2), and one F(3) atom to form distorted corner-sharing CSiF3 tetrahedra. In the third C site, C(3) is bonded to one Si(1), one H(2), one H(4), and one H(6) atom to form CSiH3 tetrahedra that share  a cornercorner with one C(2)SiF3 tetrahedra and  a cornercorner with one C(4)SiH3 tetrahedra. In the fourth C site, C(4) is bonded to one Si(1), one H(3), one H(5), and one H(7) atom to form CSiH3 tetrahedra that share  a cornercorner with one C(2)SiF3 tetrahedra and  a cornercorner with one C(3)SiH3 tetrahedra. There are eight inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(1) atom. In the second H site, H(2) is bonded in a single-bond geometry to one C(3) atom. In the third H site, H(3) is bonded in a single-bond geometry to one C(4) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one C(3) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one C(4) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one C(3) atom. In the seventh H site, H(7) is bonded in a single-bond geometry to one C(4) atom. In the eighth H site, H(8) is bonded in a single-bond geometry to one C(1) atom. There are three inequivalent F sites. In the first F site, F(1) is bonded in a single-bond geometry to one C(2) atom. In the second F site, F(2) is bonded in a single-bond geometry to one C(2) atom. In the third F site, F(3) is bonded in a single-bond geometry to one C(2) atom. is represented by the CIF card [CIF]
data_SiH8C4F3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   10.272
_cell_length_b   6.878
_cell_length_c   6.894
_cell_angle_alpha   77.172
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   474.920
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.249  0.198  0.221  1.0
  Si  Si1  1  0.749  0.802  0.779  1.0
  H  H2  1  0.263  0.896  0.518  1.0
  H  H3  1  0.763  0.104  0.482  1.0
  H  H4  1  0.097  0.487  0.180  1.0
  H  H5  1  0.597  0.513  0.820  1.0
  H  H6  1  0.902  0.516  0.818  1.0
  H  H7  1  0.402  0.484  0.182  1.0
  H  H8  1  0.093  0.334  0.426  1.0
  H  H9  1  0.593  0.666  0.574  1.0
  H  H10  1  0.907  0.667  0.573  1.0
  H  H11  1  0.407  0.333  0.427  1.0
  H  H12  1  0.012  0.254  0.231  1.0
  H  H13  1  0.512  0.746  0.769  1.0
  H  H14  1  0.989  0.747  0.769  1.0
  H  H15  1  0.489  0.253  0.231  1.0
  H  H16  1  0.172  0.830  0.311  1.0
  H  H17  1  0.672  0.170  0.689  1.0
  C  C18  1  0.233  0.939  0.361  1.0
  C  C19  1  0.733  0.061  0.639  1.0
  C  C20  1  0.250  0.199  0.938  1.0
  C  C21  1  0.750  0.801  0.062  1.0
  C  C22  1  0.098  0.333  0.267  1.0
  C  C23  1  0.598  0.667  0.733  1.0
  C  C24  1  0.902  0.671  0.732  1.0
  C  C25  1  0.402  0.329  0.268  1.0
  F  F26  1  0.250  0.390  0.820  1.0
  F  F27  1  0.750  0.610  0.180  1.0
  F  F28  1  0.143  0.105  0.878  1.0
  F  F29  1  0.643  0.895  0.122  1.0
  F  F30  1  0.857  0.894  0.123  1.0
  F  F31  1  0.357  0.106  0.877  1.0
[/CIF]
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