The material described by AgGaGeS4 crystallizes in the triclinic P1 space group. There are three inequivalent Ag sites. In the first Ag site, Ag(1) is bonded in a distorted see-saw-like geometry to one S(1), one S(11), one S(12), and one S(5) atom. In the second Ag site, Ag(2) is bonded in a distorted see-saw-like geometry to one S(11), one S(12), one S(2), and one S(6) atom. In the third Ag site, Ag(3) is bonded in a distorted see-saw-like geometry to one S(10), one S(3), one S(7), and one S(9) atom. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(10), one S(7), one S(8), and one S(9) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(3)S4 tetrahedra,  a cornercorner with one Ge(1)S4 tetrahedra,  a cornercorner with one Ge(2)S4 tetrahedra, and  a cornercorner with one Ge(3)S4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(11), one S(12), one S(5), and one S(6) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(3)S4 tetrahedra,  a cornercorner with one Ge(1)S4 tetrahedra,  a cornercorner with one Ge(2)S4 tetrahedra, and  a cornercorner with one Ge(3)S4 tetrahedra. In the third Ga site, Ga(3) is bonded to one S(11), one S(2), one S(3), and one S(7) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, and corners with two equivalent Ge(2)S4 tetrahedra. There are three inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to one S(1), one S(4), one S(5), and one S(9) atom to form GeS4 tetrahedra that share  a cornercorner with one Ga(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, and corners with two equivalent Ge(3)S4 tetrahedra. In the second Ge site, Ge(2) is bonded to one S(10), one S(2), one S(3), and one S(6) atom to form GeS4 tetrahedra that share  a cornercorner with one Ga(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, and corners with two equivalent Ga(3)S4 tetrahedra. In the third Ge site, Ge(3) is bonded to one S(1), one S(12), one S(4), and one S(8) atom to form GeS4 tetrahedra that share  a cornercorner with one Ga(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, and corners with two equivalent Ge(1)S4 tetrahedra. There are twelve inequivalent S sites. In the first S site, S(1) is bonded in a trigonal non-coplanar geometry to one Ag(1), one Ge(1), and one Ge(3) atom. In the second S site, S(2) is bonded in a trigonal non-coplanar geometry to one Ag(2), one Ga(3), and one Ge(2) atom. In the third S site, S(3) is bonded in a trigonal non-coplanar geometry to one Ag(3), one Ga(3), and one Ge(2) atom. In the fourth S site, S(4) is bonded in a water-like geometry to one Ge(1) and one Ge(3) atom. In the fifth S site, S(5) is bonded in a trigonal non-coplanar geometry to one Ag(1), one Ga(2), and one Ge(1) atom. In the sixth S site, S(6) is bonded in a trigonal non-coplanar geometry to one Ag(2), one Ga(2), and one Ge(2) atom. In the seventh S site, S(7) is bonded in a distorted trigonal non-coplanar geometry to one Ag(3), one Ga(1), and one Ga(3) atom. In the eighth S site, S(8) is bonded in a water-like geometry to one Ga(1) and one Ge(3) atom. In the ninth S site, S(9) is bonded in a trigonal non-coplanar geometry to one Ag(3), one Ga(1), and one Ge(1) atom. In the tenth S site, S(10) is bonded in a trigonal non-coplanar geometry to one Ag(3), one Ga(1), and one Ge(2) atom. In the eleventh S site, S(11) is bonded to one Ag(1), one Ag(2), one Ga(2), and one Ga(3) atom to form corner-sharing SGa2Ag2 tetrahedra. In the twelfth S site, S(12) is bonded to one Ag(1), one Ag(2), one Ga(2), and one Ge(3) atom to form corner-sharing SGaAg2Ge tetrahedra. is represented by the CIF file [CIF]
data_GaAgGeS4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.954
_cell_length_b   6.969
_cell_length_c   12.177
_cell_angle_alpha   74.452
_cell_angle_beta   82.402
_cell_angle_gamma   60.892
_symmetry_Int_Tables_number   1
_cell_volume   496.776
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.503  0.252  0.498  1.0
  Ga  Ga1  1  0.009  0.997  0.001  1.0
  Ga  Ga2  1  0.244  0.494  0.232  1.0
  Ag  Ag3  1  0.334  0.390  0.918  1.0
  Ag  Ag4  1  0.664  0.643  0.087  1.0
  Ag  Ag5  1  0.172  0.971  0.417  1.0
  Ge  Ge6  1  0.258  0.993  0.726  1.0
  Ge  Ge7  1  0.739  0.970  0.273  1.0
  Ge  Ge8  1  0.752  0.967  0.768  1.0
  S  S9  1  0.118  0.751  0.739  1.0
  S  S10  1  0.872  0.613  0.258  1.0
  S  S11  1  0.381  0.115  0.238  1.0
  S  S12  1  0.615  0.738  0.760  1.0
  S  S13  1  0.097  0.221  0.848  1.0
  S  S14  1  0.897  0.165  0.151  1.0
  S  S15  1  0.400  0.569  0.355  1.0
  S  S16  1  0.605  0.307  0.655  1.0
  S  S17  1  0.193  0.200  0.547  1.0
  S  S18  1  0.811  0.944  0.452  1.0
  S  S19  1  0.310  0.644  0.045  1.0
  S  S20  1  0.693  0.999  0.951  1.0
[/CIF]
.
The material described by AgGaGeS4 crystallizes in the triclinic P1 space group. There are three inequivalent Ag sites. In the first Ag site, Ag(1) is bonded in a distorted see-saw-like geometry to one S(1), one S(11), one S(12), and one S(5) atom. In the second Ag site, Ag(2) is bonded in a distorted see-saw-like geometry to one S(11), one S(12), one S(2), and one S(6) atom. In the third Ag site, Ag(3) is bonded in a distorted see-saw-like geometry to one S(10), one S(3), one S(7), and one S(9) atom. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(10), one S(7), one S(8), and one S(9) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(3)S4 tetrahedra,  a cornercorner with one Ge(1)S4 tetrahedra,  a cornercorner with one Ge(2)S4 tetrahedra, and  a cornercorner with one Ge(3)S4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(11), one S(12), one S(5), and one S(6) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(3)S4 tetrahedra,  a cornercorner with one Ge(1)S4 tetrahedra,  a cornercorner with one Ge(2)S4 tetrahedra, and  a cornercorner with one Ge(3)S4 tetrahedra. In the third Ga site, Ga(3) is bonded to one S(11), one S(2), one S(3), and one S(7) atom to form GaS4 tetrahedra that share  a cornercorner with one Ga(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, and corners with two equivalent Ge(2)S4 tetrahedra. There are three inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to one S(1), one S(4), one S(5), and one S(9) atom to form GeS4 tetrahedra that share  a cornercorner with one Ga(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, and corners with two equivalent Ge(3)S4 tetrahedra. In the second Ge site, Ge(2) is bonded to one S(10), one S(2), one S(3), and one S(6) atom to form GeS4 tetrahedra that share  a cornercorner with one Ga(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, and corners with two equivalent Ga(3)S4 tetrahedra. In the third Ge site, Ge(3) is bonded to one S(1), one S(12), one S(4), and one S(8) atom to form GeS4 tetrahedra that share  a cornercorner with one Ga(1)S4 tetrahedra,  a cornercorner with one Ga(2)S4 tetrahedra, and corners with two equivalent Ge(1)S4 tetrahedra. There are twelve inequivalent S sites. In the first S site, S(1) is bonded in a trigonal non-coplanar geometry to one Ag(1), one Ge(1), and one Ge(3) atom. In the second S site, S(2) is bonded in a trigonal non-coplanar geometry to one Ag(2), one Ga(3), and one Ge(2) atom. In the third S site, S(3) is bonded in a trigonal non-coplanar geometry to one Ag(3), one Ga(3), and one Ge(2) atom. In the fourth S site, S(4) is bonded in a water-like geometry to one Ge(1) and one Ge(3) atom. In the fifth S site, S(5) is bonded in a trigonal non-coplanar geometry to one Ag(1), one Ga(2), and one Ge(1) atom. In the sixth S site, S(6) is bonded in a trigonal non-coplanar geometry to one Ag(2), one Ga(2), and one Ge(2) atom. In the seventh S site, S(7) is bonded in a distorted trigonal non-coplanar geometry to one Ag(3), one Ga(1), and one Ga(3) atom. In the eighth S site, S(8) is bonded in a water-like geometry to one Ga(1) and one Ge(3) atom. In the ninth S site, S(9) is bonded in a trigonal non-coplanar geometry to one Ag(3), one Ga(1), and one Ge(1) atom. In the tenth S site, S(10) is bonded in a trigonal non-coplanar geometry to one Ag(3), one Ga(1), and one Ge(2) atom. In the eleventh S site, S(11) is bonded to one Ag(1), one Ag(2), one Ga(2), and one Ga(3) atom to form corner-sharing SGa2Ag2 tetrahedra. In the twelfth S site, S(12) is bonded to one Ag(1), one Ag(2), one Ga(2), and one Ge(3) atom to form corner-sharing SGaAg2Ge tetrahedra. is represented by the CIF file [CIF]
data_GaAgGeS4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.954
_cell_length_b   6.969
_cell_length_c   12.177
_cell_angle_alpha   74.452
_cell_angle_beta   82.402
_cell_angle_gamma   60.892
_symmetry_Int_Tables_number   1
_cell_volume   496.776
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.503  0.252  0.498  1.0
  Ga  Ga1  1  0.009  0.997  0.001  1.0
  Ga  Ga2  1  0.244  0.494  0.232  1.0
  Ag  Ag3  1  0.334  0.390  0.918  1.0
  Ag  Ag4  1  0.664  0.643  0.087  1.0
  Ag  Ag5  1  0.172  0.971  0.417  1.0
  Ge  Ge6  1  0.258  0.993  0.726  1.0
  Ge  Ge7  1  0.739  0.970  0.273  1.0
  Ge  Ge8  1  0.752  0.967  0.768  1.0
  S  S9  1  0.118  0.751  0.739  1.0
  S  S10  1  0.872  0.613  0.258  1.0
  S  S11  1  0.381  0.115  0.238  1.0
  S  S12  1  0.615  0.738  0.760  1.0
  S  S13  1  0.097  0.221  0.848  1.0
  S  S14  1  0.897  0.165  0.151  1.0
  S  S15  1  0.400  0.569  0.355  1.0
  S  S16  1  0.605  0.307  0.655  1.0
  S  S17  1  0.193  0.200  0.547  1.0
  S  S18  1  0.811  0.944  0.452  1.0
  S  S19  1  0.310  0.644  0.045  1.0
  S  S20  1  0.693  0.999  0.951  1.0
[/CIF]
.