The structure described by Tc3Si is Magnesium-derived structured and crystallizes in the hexagonal P6_3/mmc space group. Tc(1) is bonded to eight equivalent Tc(1) and four equivalent Si(1) atoms to form TcSi4Tc8 cuboctahedra that share corners with four equivalent Si(1)Tc12 cuboctahedra, corners with fourteen equivalent Tc(1)Si4Tc8 cuboctahedra, edges with six equivalent Si(1)Tc12 cuboctahedra, edges with twelve equivalent Tc(1)Si4Tc8 cuboctahedra, faces with four equivalent Si(1)Tc12 cuboctahedra, and faces with sixteen equivalent Tc(1)Si4Tc8 cuboctahedra. Si(1) is bonded to twelve equivalent Tc(1) atoms to form SiTc12 cuboctahedra that share corners with six equivalent Si(1)Tc12 cuboctahedra, corners with twelve equivalent Tc(1)Si4Tc8 cuboctahedra, edges with eighteen equivalent Tc(1)Si4Tc8 cuboctahedra, faces with eight equivalent Si(1)Tc12 cuboctahedra, and faces with twelve equivalent Tc(1)Si4Tc8 cuboctahedra. is represented by the CIF card [CIF]
data_SiTc3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.411
_cell_length_b   5.411
_cell_length_c   4.428
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   112.261
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.667  0.333  0.250  1.0
  Si  Si1  1  0.333  0.667  0.750  1.0
  Tc  Tc2  1  0.171  0.342  0.250  1.0
  Tc  Tc3  1  0.658  0.829  0.250  1.0
  Tc  Tc4  1  0.171  0.829  0.250  1.0
  Tc  Tc5  1  0.829  0.658  0.750  1.0
  Tc  Tc6  1  0.342  0.171  0.750  1.0
  Tc  Tc7  1  0.829  0.171  0.750  1.0
[/CIF]
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The structure described by Tc3Si is Magnesium-derived structured and crystallizes in the hexagonal P6_3/mmc space group. Tc(1) is bonded to eight equivalent Tc(1) and four equivalent Si(1) atoms to form TcSi4Tc8 cuboctahedra that share corners with four equivalent Si(1)Tc12 cuboctahedra, corners with fourteen equivalent Tc(1)Si4Tc8 cuboctahedra, edges with six equivalent Si(1)Tc12 cuboctahedra, edges with twelve equivalent Tc(1)Si4Tc8 cuboctahedra, faces with four equivalent Si(1)Tc12 cuboctahedra, and faces with sixteen equivalent Tc(1)Si4Tc8 cuboctahedra. Si(1) is bonded to twelve equivalent Tc(1) atoms to form SiTc12 cuboctahedra that share corners with six equivalent Si(1)Tc12 cuboctahedra, corners with twelve equivalent Tc(1)Si4Tc8 cuboctahedra, edges with eighteen equivalent Tc(1)Si4Tc8 cuboctahedra, faces with eight equivalent Si(1)Tc12 cuboctahedra, and faces with twelve equivalent Tc(1)Si4Tc8 cuboctahedra. is represented by the CIF card [CIF]
data_SiTc3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.411
_cell_length_b   5.411
_cell_length_c   4.428
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   112.261
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.667  0.333  0.250  1.0
  Si  Si1  1  0.333  0.667  0.750  1.0
  Tc  Tc2  1  0.171  0.342  0.250  1.0
  Tc  Tc3  1  0.658  0.829  0.250  1.0
  Tc  Tc4  1  0.171  0.829  0.250  1.0
  Tc  Tc5  1  0.829  0.658  0.750  1.0
  Tc  Tc6  1  0.342  0.171  0.750  1.0
  Tc  Tc7  1  0.829  0.171  0.750  1.0
[/CIF]
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