The crystal structure described by HoInGe2O7 crystallizes in the monoclinic C2 space group. Ho(1) is bonded to one O(1), one O(2), one O(5), one O(6), one O(7), and one O(8) atom to form distorted HoO6 pentagonal pyramids that share corners with three equivalent Ge(1)O4 tetrahedra, corners with three equivalent Ge(2)O4 tetrahedra, and edges with three equivalent In(1)O6 pentagonal pyramids. In(1) is bonded to one O(1), one O(2), one O(5), one O(6), one O(7), and one O(8) atom to form distorted InO6 pentagonal pyramids that share corners with three equivalent Ge(1)O4 tetrahedra, corners with three equivalent Ge(2)O4 tetrahedra, and edges with three equivalent Ho(1)O6 pentagonal pyramids. There are two inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to one O(1), one O(3), one O(5), and one O(7) atom to form GeO4 tetrahedra that share corners with three equivalent Ho(1)O6 pentagonal pyramids, corners with three equivalent In(1)O6 pentagonal pyramids, and  a cornercorner with one Ge(1)O4 tetrahedra. In the second Ge site, Ge(2) is bonded to one O(2), one O(4), one O(6), and one O(8) atom to form GeO4 tetrahedra that share corners with three equivalent Ho(1)O6 pentagonal pyramids, corners with three equivalent In(1)O6 pentagonal pyramids, and  a cornercorner with one Ge(2)O4 tetrahedra. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(1) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Ho(1), one In(1), and one Ge(2) atom. In the third O site, O(3) is bonded in a linear geometry to two equivalent Ge(1) atoms. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to two equivalent Ge(2) atoms. In the fifth O site, O(5) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(1) atom. In the sixth O site, O(6) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(2) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(1) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_HoInGe2O7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.702
_cell_length_b   5.702
_cell_length_c   9.982
_cell_angle_alpha   82.821
_cell_angle_beta   82.821
_cell_angle_gamma   105.684
_symmetry_Int_Tables_number   1
_cell_volume   305.720
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.699  0.303  0.254  1.0
  Ho  Ho1  1  0.697  0.301  0.746  1.0
  In  In2  1  0.313  0.688  0.247  1.0
  In  In3  1  0.312  0.687  0.753  1.0
  Ge  Ge4  1  0.772  0.763  0.954  1.0
  Ge  Ge5  1  0.237  0.228  0.046  1.0
  Ge  Ge6  1  0.222  0.232  0.546  1.0
  Ge  Ge7  1  0.768  0.778  0.454  1.0
  O  O8  1  0.931  0.594  0.857  1.0
  O  O9  1  0.406  0.069  0.143  1.0
  O  O10  1  0.092  0.415  0.647  1.0
  O  O11  1  0.585  0.908  0.353  1.0
  O  O12  1  0.995  0.005  0.000  1.0
  O  O13  1  0.942  0.058  0.500  1.0
  O  O14  1  0.601  0.589  0.112  1.0
  O  O15  1  0.411  0.399  0.888  1.0
  O  O16  1  0.404  0.395  0.388  1.0
  O  O17  1  0.605  0.596  0.612  1.0
  O  O18  1  0.602  0.912  0.852  1.0
  O  O19  1  0.088  0.398  0.148  1.0
  O  O20  1  0.379  0.061  0.644  1.0
  O  O21  1  0.939  0.621  0.356  1.0
[/CIF]
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The crystal structure described by HoInGe2O7 crystallizes in the monoclinic C2 space group. Ho(1) is bonded to one O(1), one O(2), one O(5), one O(6), one O(7), and one O(8) atom to form distorted HoO6 pentagonal pyramids that share corners with three equivalent Ge(1)O4 tetrahedra, corners with three equivalent Ge(2)O4 tetrahedra, and edges with three equivalent In(1)O6 pentagonal pyramids. In(1) is bonded to one O(1), one O(2), one O(5), one O(6), one O(7), and one O(8) atom to form distorted InO6 pentagonal pyramids that share corners with three equivalent Ge(1)O4 tetrahedra, corners with three equivalent Ge(2)O4 tetrahedra, and edges with three equivalent Ho(1)O6 pentagonal pyramids. There are two inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to one O(1), one O(3), one O(5), and one O(7) atom to form GeO4 tetrahedra that share corners with three equivalent Ho(1)O6 pentagonal pyramids, corners with three equivalent In(1)O6 pentagonal pyramids, and  a cornercorner with one Ge(1)O4 tetrahedra. In the second Ge site, Ge(2) is bonded to one O(2), one O(4), one O(6), and one O(8) atom to form GeO4 tetrahedra that share corners with three equivalent Ho(1)O6 pentagonal pyramids, corners with three equivalent In(1)O6 pentagonal pyramids, and  a cornercorner with one Ge(2)O4 tetrahedra. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(1) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Ho(1), one In(1), and one Ge(2) atom. In the third O site, O(3) is bonded in a linear geometry to two equivalent Ge(1) atoms. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to two equivalent Ge(2) atoms. In the fifth O site, O(5) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(1) atom. In the sixth O site, O(6) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(2) atom. In the seventh O site, O(7) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(1) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Ho(1), one In(1), and one Ge(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_HoInGe2O7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.702
_cell_length_b   5.702
_cell_length_c   9.982
_cell_angle_alpha   82.821
_cell_angle_beta   82.821
_cell_angle_gamma   105.684
_symmetry_Int_Tables_number   1
_cell_volume   305.720
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.699  0.303  0.254  1.0
  Ho  Ho1  1  0.697  0.301  0.746  1.0
  In  In2  1  0.313  0.688  0.247  1.0
  In  In3  1  0.312  0.687  0.753  1.0
  Ge  Ge4  1  0.772  0.763  0.954  1.0
  Ge  Ge5  1  0.237  0.228  0.046  1.0
  Ge  Ge6  1  0.222  0.232  0.546  1.0
  Ge  Ge7  1  0.768  0.778  0.454  1.0
  O  O8  1  0.931  0.594  0.857  1.0
  O  O9  1  0.406  0.069  0.143  1.0
  O  O10  1  0.092  0.415  0.647  1.0
  O  O11  1  0.585  0.908  0.353  1.0
  O  O12  1  0.995  0.005  0.000  1.0
  O  O13  1  0.942  0.058  0.500  1.0
  O  O14  1  0.601  0.589  0.112  1.0
  O  O15  1  0.411  0.399  0.888  1.0
  O  O16  1  0.404  0.395  0.388  1.0
  O  O17  1  0.605  0.596  0.612  1.0
  O  O18  1  0.602  0.912  0.852  1.0
  O  O19  1  0.088  0.398  0.148  1.0
  O  O20  1  0.379  0.061  0.644  1.0
  O  O21  1  0.939  0.621  0.356  1.0
[/CIF]
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