The material structure described by Rb2Ga2Ge3O10 crystallizes in the monoclinic C2 space group. There are two inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 6-coordinate geometry to one O(1), one O(2), one O(3), one O(6), one O(7), and one O(8) atom. In the second Rb site, Rb(2) is bonded in a 8-coordinate geometry to one O(1), one O(10), one O(4), one O(6), one O(7), one O(9), and two equivalent O(5) atoms. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(3), one O(4), one O(7), and one O(8) atom to form distorted GaO4 tetrahedra that share  a cornercorner with one Ge(2)O4 tetrahedra and corners with two equivalent Ge(3)O4 tetrahedra. In the second Ga site, Ga(2) is bonded to one O(10), one O(2), one O(5), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Ge(1)O4 tetrahedra,  a cornercorner with one Ge(3)O4 tetrahedra, and corners with two equivalent Ge(2)O4 tetrahedra. There are four inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to two equivalent O(1) and two equivalent O(10) atoms to form GeO4 tetrahedra that share corners with two equivalent Ga(2)O4 tetrahedra and corners with two equivalent Ge(2)O4 tetrahedra. In the second Ge site, Ge(2) is bonded to one O(1), one O(2), one O(3), and one O(9) atom to form GeO4 tetrahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ge(1)O4 tetrahedra, and corners with two equivalent Ga(2)O4 tetrahedra. In the third Ge site, Ge(3) is bonded to one O(4), one O(5), one O(6), and one O(8) atom to form GeO4 tetrahedra that share  a cornercorner with one Ga(2)O4 tetrahedra and corners with two equivalent Ga(1)O4 tetrahedra. In the fourth Ge site, Ge(4) is bonded in a distorted rectangular see-saw-like geometry to two equivalent O(4) and two equivalent O(7) atoms. There are ten inequivalent O sites. In the first O site, O(5) is bonded in a 2-coordinate geometry to two equivalent Rb(2), one Ga(2), and one Ge(3) atom. In the second O site, O(6) is bonded in a distorted single-bond geometry to one Rb(1), one Rb(2), and one Ge(3) atom. In the third O site, O(7) is bonded in a 4-coordinate geometry to one Rb(1), one Rb(2), one Ga(1), and one Ge(4) atom. In the fourth O site, O(8) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Ga(1), and one Ge(3) atom. In the fifth O site, O(9) is bonded in a distorted bent 120 degrees geometry to one Rb(2), one Ga(2), and one Ge(2) atom. In the sixth O site, O(10) is bonded in a distorted bent 120 degrees geometry to one Rb(2), one Ga(2), and one Ge(1) atom. In the seventh O site, O(1) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Rb(2), one Ge(1), and one Ge(2) atom. In the eighth O site, O(2) is bonded in a distorted trigonal planar geometry to one Rb(1), one Ga(2), and one Ge(2) atom. In the ninth O site, O(3) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Ga(1), and one Ge(2) atom. In the tenth O site, O(4) is bonded in a 3-coordinate geometry to one Rb(2), one Ga(1), one Ge(3), and one Ge(4) atom. is represented by the CIF card [CIF]
data_Rb2Ga2Ge3O10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.557
_cell_length_b   9.557
_cell_length_c   12.892
_cell_angle_alpha   50.800
_cell_angle_beta   50.800
_cell_angle_gamma   41.945
_symmetry_Int_Tables_number   1
_cell_volume   579.407
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Rb  Rb0  1  0.424  0.123  0.835  1.0
  Rb  Rb1  1  0.733  0.988  0.377  1.0
  Rb  Rb2  1  0.012  0.267  0.623  1.0
  Rb  Rb3  1  0.877  0.576  0.165  1.0
  Ga  Ga4  1  0.042  0.692  0.740  1.0
  Ga  Ga5  1  0.308  0.569  0.193  1.0
  Ga  Ga6  1  0.431  0.692  0.807  1.0
  Ga  Ga7  1  0.308  0.958  0.260  1.0
  Ge  Ge8  1  0.998  0.002  0.000  1.0
  Ge  Ge9  1  0.751  0.506  0.938  1.0
  Ge  Ge10  1  0.317  0.526  0.447  1.0
  Ge  Ge11  1  0.989  0.011  0.500  1.0
  Ge  Ge12  1  0.474  0.683  0.553  1.0
  Ge  Ge13  1  0.494  0.249  0.062  1.0
  O  O14  1  0.969  0.260  0.887  1.0
  O  O15  1  0.583  0.723  0.828  1.0
  O  O16  1  0.896  0.585  0.911  1.0
  O  O17  1  0.068  0.727  0.559  1.0
  O  O18  1  0.191  0.532  0.384  1.0
  O  O19  1  0.468  0.273  0.550  1.0
  O  O20  1  0.869  0.010  0.673  1.0
  O  O21  1  0.323  0.567  0.710  1.0
  O  O22  1  0.565  0.389  0.882  1.0
  O  O23  1  0.136  0.873  0.111  1.0
  O  O24  1  0.127  0.864  0.889  1.0
  O  O25  1  0.611  0.435  0.118  1.0
  O  O26  1  0.433  0.677  0.290  1.0
  O  O27  1  0.990  0.131  0.327  1.0
  O  O28  1  0.727  0.532  0.450  1.0
  O  O29  1  0.468  0.809  0.616  1.0
  O  O30  1  0.273  0.932  0.441  1.0
  O  O31  1  0.415  0.104  0.089  1.0
  O  O32  1  0.277  0.417  0.172  1.0
  O  O33  1  0.740  0.031  0.113  1.0
[/CIF]
.
The material structure described by Rb2Ga2Ge3O10 crystallizes in the monoclinic C2 space group. There are two inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 6-coordinate geometry to one O(1), one O(2), one O(3), one O(6), one O(7), and one O(8) atom. In the second Rb site, Rb(2) is bonded in a 8-coordinate geometry to one O(1), one O(10), one O(4), one O(6), one O(7), one O(9), and two equivalent O(5) atoms. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(3), one O(4), one O(7), and one O(8) atom to form distorted GaO4 tetrahedra that share  a cornercorner with one Ge(2)O4 tetrahedra and corners with two equivalent Ge(3)O4 tetrahedra. In the second Ga site, Ga(2) is bonded to one O(10), one O(2), one O(5), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Ge(1)O4 tetrahedra,  a cornercorner with one Ge(3)O4 tetrahedra, and corners with two equivalent Ge(2)O4 tetrahedra. There are four inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to two equivalent O(1) and two equivalent O(10) atoms to form GeO4 tetrahedra that share corners with two equivalent Ga(2)O4 tetrahedra and corners with two equivalent Ge(2)O4 tetrahedra. In the second Ge site, Ge(2) is bonded to one O(1), one O(2), one O(3), and one O(9) atom to form GeO4 tetrahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ge(1)O4 tetrahedra, and corners with two equivalent Ga(2)O4 tetrahedra. In the third Ge site, Ge(3) is bonded to one O(4), one O(5), one O(6), and one O(8) atom to form GeO4 tetrahedra that share  a cornercorner with one Ga(2)O4 tetrahedra and corners with two equivalent Ga(1)O4 tetrahedra. In the fourth Ge site, Ge(4) is bonded in a distorted rectangular see-saw-like geometry to two equivalent O(4) and two equivalent O(7) atoms. There are ten inequivalent O sites. In the first O site, O(5) is bonded in a 2-coordinate geometry to two equivalent Rb(2), one Ga(2), and one Ge(3) atom. In the second O site, O(6) is bonded in a distorted single-bond geometry to one Rb(1), one Rb(2), and one Ge(3) atom. In the third O site, O(7) is bonded in a 4-coordinate geometry to one Rb(1), one Rb(2), one Ga(1), and one Ge(4) atom. In the fourth O site, O(8) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Ga(1), and one Ge(3) atom. In the fifth O site, O(9) is bonded in a distorted bent 120 degrees geometry to one Rb(2), one Ga(2), and one Ge(2) atom. In the sixth O site, O(10) is bonded in a distorted bent 120 degrees geometry to one Rb(2), one Ga(2), and one Ge(1) atom. In the seventh O site, O(1) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Rb(2), one Ge(1), and one Ge(2) atom. In the eighth O site, O(2) is bonded in a distorted trigonal planar geometry to one Rb(1), one Ga(2), and one Ge(2) atom. In the ninth O site, O(3) is bonded in a distorted bent 120 degrees geometry to one Rb(1), one Ga(1), and one Ge(2) atom. In the tenth O site, O(4) is bonded in a 3-coordinate geometry to one Rb(2), one Ga(1), one Ge(3), and one Ge(4) atom. is represented by the CIF card [CIF]
data_Rb2Ga2Ge3O10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.557
_cell_length_b   9.557
_cell_length_c   12.892
_cell_angle_alpha   50.800
_cell_angle_beta   50.800
_cell_angle_gamma   41.945
_symmetry_Int_Tables_number   1
_cell_volume   579.407
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Rb  Rb0  1  0.424  0.123  0.835  1.0
  Rb  Rb1  1  0.733  0.988  0.377  1.0
  Rb  Rb2  1  0.012  0.267  0.623  1.0
  Rb  Rb3  1  0.877  0.576  0.165  1.0
  Ga  Ga4  1  0.042  0.692  0.740  1.0
  Ga  Ga5  1  0.308  0.569  0.193  1.0
  Ga  Ga6  1  0.431  0.692  0.807  1.0
  Ga  Ga7  1  0.308  0.958  0.260  1.0
  Ge  Ge8  1  0.998  0.002  0.000  1.0
  Ge  Ge9  1  0.751  0.506  0.938  1.0
  Ge  Ge10  1  0.317  0.526  0.447  1.0
  Ge  Ge11  1  0.989  0.011  0.500  1.0
  Ge  Ge12  1  0.474  0.683  0.553  1.0
  Ge  Ge13  1  0.494  0.249  0.062  1.0
  O  O14  1  0.969  0.260  0.887  1.0
  O  O15  1  0.583  0.723  0.828  1.0
  O  O16  1  0.896  0.585  0.911  1.0
  O  O17  1  0.068  0.727  0.559  1.0
  O  O18  1  0.191  0.532  0.384  1.0
  O  O19  1  0.468  0.273  0.550  1.0
  O  O20  1  0.869  0.010  0.673  1.0
  O  O21  1  0.323  0.567  0.710  1.0
  O  O22  1  0.565  0.389  0.882  1.0
  O  O23  1  0.136  0.873  0.111  1.0
  O  O24  1  0.127  0.864  0.889  1.0
  O  O25  1  0.611  0.435  0.118  1.0
  O  O26  1  0.433  0.677  0.290  1.0
  O  O27  1  0.990  0.131  0.327  1.0
  O  O28  1  0.727  0.532  0.450  1.0
  O  O29  1  0.468  0.809  0.616  1.0
  O  O30  1  0.273  0.932  0.441  1.0
  O  O31  1  0.415  0.104  0.089  1.0
  O  O32  1  0.277  0.417  0.172  1.0
  O  O33  1  0.740  0.031  0.113  1.0
[/CIF]
.