The compound described by GaB2N3 crystallizes in the monoclinic C2/c space group. Ga(1) is bonded to one N(2), one N(4), and two equivalent N(3) atoms to form a mixture of distorted corner and edge-sharing GaN4 tetrahedra. There are two inequivalent B sites. In the first B site, B(1) is bonded in a distorted trigonal planar geometry to one N(2) and two equivalent N(3) atoms. In the second B site, B(2) is bonded in a trigonal planar geometry to one N(1), one N(2), and one N(4) atom. There are four inequivalent N sites. In the first N site, N(4) is bonded to two equivalent Ga(1) and two equivalent B(2) atoms to form corner-sharing NGa2B2 tetrahedra. In the second N site, N(1) is bonded in a linear geometry to two equivalent B(2) atoms. In the third N site, N(2) is bonded in a trigonal planar geometry to one Ga(1), one B(1), and one B(2) atom. In the fourth N site, N(3) is bonded to two equivalent Ga(1) and two equivalent B(1) atoms to form a mixture of distorted corner and edge-sharing NGa2B2 tetrahedra. is represented by the CIF file [CIF]
data_GaB2N3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.001
_cell_length_b   8.756
_cell_length_c   11.490
_cell_angle_alpha   90.000
_cell_angle_beta   90.107
_cell_angle_gamma   151.103
_symmetry_Int_Tables_number   1
_cell_volume   243.103
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.249  0.084  0.612  1.0
  Ga  Ga1  1  0.751  0.835  0.888  1.0
  Ga  Ga2  1  0.751  0.916  0.388  1.0
  Ga  Ga3  1  0.249  0.165  0.112  1.0
  B  B4  1  0.816  0.182  0.950  1.0
  B  B5  1  0.184  0.366  0.550  1.0
  B  B6  1  0.184  0.818  0.050  1.0
  B  B7  1  0.816  0.634  0.450  1.0
  B  B8  1  0.530  0.944  0.709  1.0
  B  B9  1  0.470  0.414  0.791  1.0
  B  B10  1  0.470  0.056  0.291  1.0
  B  B11  1  0.530  0.586  0.209  1.0
  N  N12  1  0.000  0.673  0.750  1.0
  N  N13  1  0.000  0.327  0.250  1.0
  N  N14  1  0.735  0.162  0.626  1.0
  N  N15  1  0.265  0.427  0.874  1.0
  N  N16  1  0.265  0.838  0.374  1.0
  N  N17  1  0.735  0.573  0.126  1.0
  N  N18  1  0.372  0.061  0.997  1.0
  N  N19  1  0.628  0.690  0.503  1.0
  N  N20  1  0.628  0.939  0.003  1.0
  N  N21  1  0.372  0.310  0.497  1.0
  N  N22  1  0.000  0.070  0.750  1.0
  N  N23  1  0.000  0.930  0.250  1.0
[/CIF]
.
The compound described by GaB2N3 crystallizes in the monoclinic C2/c space group. Ga(1) is bonded to one N(2), one N(4), and two equivalent N(3) atoms to form a mixture of distorted corner and edge-sharing GaN4 tetrahedra. There are two inequivalent B sites. In the first B site, B(1) is bonded in a distorted trigonal planar geometry to one N(2) and two equivalent N(3) atoms. In the second B site, B(2) is bonded in a trigonal planar geometry to one N(1), one N(2), and one N(4) atom. There are four inequivalent N sites. In the first N site, N(4) is bonded to two equivalent Ga(1) and two equivalent B(2) atoms to form corner-sharing NGa2B2 tetrahedra. In the second N site, N(1) is bonded in a linear geometry to two equivalent B(2) atoms. In the third N site, N(2) is bonded in a trigonal planar geometry to one Ga(1), one B(1), and one B(2) atom. In the fourth N site, N(3) is bonded to two equivalent Ga(1) and two equivalent B(1) atoms to form a mixture of distorted corner and edge-sharing NGa2B2 tetrahedra. is represented by the CIF file [CIF]
data_GaB2N3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.001
_cell_length_b   8.756
_cell_length_c   11.490
_cell_angle_alpha   90.000
_cell_angle_beta   90.107
_cell_angle_gamma   151.103
_symmetry_Int_Tables_number   1
_cell_volume   243.103
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.249  0.084  0.612  1.0
  Ga  Ga1  1  0.751  0.835  0.888  1.0
  Ga  Ga2  1  0.751  0.916  0.388  1.0
  Ga  Ga3  1  0.249  0.165  0.112  1.0
  B  B4  1  0.816  0.182  0.950  1.0
  B  B5  1  0.184  0.366  0.550  1.0
  B  B6  1  0.184  0.818  0.050  1.0
  B  B7  1  0.816  0.634  0.450  1.0
  B  B8  1  0.530  0.944  0.709  1.0
  B  B9  1  0.470  0.414  0.791  1.0
  B  B10  1  0.470  0.056  0.291  1.0
  B  B11  1  0.530  0.586  0.209  1.0
  N  N12  1  0.000  0.673  0.750  1.0
  N  N13  1  0.000  0.327  0.250  1.0
  N  N14  1  0.735  0.162  0.626  1.0
  N  N15  1  0.265  0.427  0.874  1.0
  N  N16  1  0.265  0.838  0.374  1.0
  N  N17  1  0.735  0.573  0.126  1.0
  N  N18  1  0.372  0.061  0.997  1.0
  N  N19  1  0.628  0.690  0.503  1.0
  N  N20  1  0.628  0.939  0.003  1.0
  N  N21  1  0.372  0.310  0.497  1.0
  N  N22  1  0.000  0.070  0.750  1.0
  N  N23  1  0.000  0.930  0.250  1.0
[/CIF]
.