The material structure described by K2Ba5Si12O30 crystallizes in the monoclinic C2 space group. K(1) is bonded in a 7-coordinate geometry to one O(10), one O(11), one O(14), one O(15), one O(5), one O(6), and one O(7) atom. There are three inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 7-coordinate geometry to one O(10), one O(11), one O(12), one O(13), one O(14), one O(15), and one O(4) atom. In the second Ba site, Ba(2) is bonded in a distorted body-centered cubic geometry to two equivalent O(14), two equivalent O(15), two equivalent O(8), and two equivalent O(9) atoms. In the third Ba site, Ba(3) is bonded in a 9-coordinate geometry to one O(1), one O(10), one O(11), one O(2), one O(3), two equivalent O(12), and two equivalent O(13) atoms. There are six inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(4), one O(6), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(11), one O(4), one O(7), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(12), one O(16), and one O(2) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(1), one O(13), one O(16), and one O(3) atom to form corner-sharing SiO4 tetrahedra. In the fifth Si site, Si(5) is bonded to one O(14), one O(3), one O(5), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the sixth Si site, Si(6) is bonded to one O(15), one O(2), one O(5), and one O(9) atom to form corner-sharing SiO4 tetrahedra. There are sixteen inequivalent O sites. In the first O site, O(1) is bonded in a distorted linear geometry to one Ba(3), one Si(3), and one Si(4) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Ba(3), one Si(3), and one Si(6) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Ba(3), one Si(4), and one Si(5) atom. In the fourth O site, O(4) is bonded in a distorted bent 150 degrees geometry to one Ba(1), one Si(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one K(1), one Si(5), and one Si(6) atom. In the sixth O site, O(6) is bonded in a 2-coordinate geometry to two equivalent K(1) and two equivalent Si(1) atoms. In the seventh O site, O(7) is bonded in a 2-coordinate geometry to two equivalent K(1) and two equivalent Si(2) atoms. In the eighth O site, O(8) is bonded in a 2-coordinate geometry to one Ba(2), one Si(1), and one Si(5) atom. In the ninth O site, O(9) is bonded in a 2-coordinate geometry to one Ba(2), one Si(2), and one Si(6) atom. In the tenth O site, O(10) is bonded in a distorted single-bond geometry to one K(1), one Ba(1), one Ba(3), and one Si(1) atom. In the eleventh O site, O(11) is bonded in a distorted single-bond geometry to one K(1), one Ba(1), one Ba(3), and one Si(2) atom. In the twelfth O site, O(12) is bonded in a distorted single-bond geometry to one Ba(1), two equivalent Ba(3), and one Si(3) atom. In the thirteenth O site, O(13) is bonded in a distorted single-bond geometry to one Ba(1), two equivalent Ba(3), and one Si(4) atom. In the fourteenth O site, O(14) is bonded in a distorted single-bond geometry to one K(1), one Ba(1), one Ba(2), and one Si(5) atom. In the fifteenth O site, O(15) is bonded in a distorted single-bond geometry to one K(1), one Ba(1), one Ba(2), and one Si(6) atom. In the sixteenth O site, O(16) is bonded in a linear geometry to one Si(3) and one Si(4) atom. is represented by the CIF card [CIF]
data_K2Ba5(Si2O5)6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   12.704
_cell_length_b   12.704
_cell_length_c   8.376
_cell_angle_alpha   88.103
_cell_angle_beta   88.103
_cell_angle_gamma   35.975
_symmetry_Int_Tables_number   1
_cell_volume   793.587
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.051  0.051  0.747  1.0
  K  K1  1  0.949  0.949  0.253  1.0
  Ba  Ba2  1  0.650  0.646  0.759  1.0
  Ba  Ba3  1  0.354  0.350  0.241  1.0
  Ba  Ba4  1  0.500  0.500  0.500  1.0
  Ba  Ba5  1  0.803  0.805  0.995  1.0
  Ba  Ba6  1  0.195  0.197  0.005  1.0
  Si  Si7  1  0.763  0.358  0.051  1.0
  Si  Si8  1  0.358  0.764  0.051  1.0
  Si  Si9  1  0.236  0.642  0.949  1.0
  Si  Si10  1  0.642  0.237  0.949  1.0
  Si  Si11  1  0.060  0.486  0.681  1.0
  Si  Si12  1  0.477  0.071  0.669  1.0
  Si  Si13  1  0.929  0.523  0.331  1.0
  Si  Si14  1  0.514  0.940  0.319  1.0
  Si  Si15  1  0.898  0.302  0.386  1.0
  Si  Si16  1  0.302  0.899  0.387  1.0
  Si  Si17  1  0.101  0.698  0.613  1.0
  Si  Si18  1  0.698  0.102  0.614  1.0
  O  O19  1  0.277  0.286  0.690  1.0
  O  O20  1  0.714  0.723  0.310  1.0
  O  O21  1  0.036  0.635  0.684  1.0
  O  O22  1  0.626  0.045  0.686  1.0
  O  O23  1  0.955  0.374  0.314  1.0
  O  O24  1  0.365  0.964  0.316  1.0
  O  O25  1  0.560  0.560  1.000  1.0
  O  O26  1  0.440  0.440  0.000  1.0
  O  O27  1  0.080  0.081  0.393  1.0
  O  O28  1  0.919  0.920  0.607  1.0
  O  O29  1  0.782  0.218  0.000  1.0
  O  O30  1  0.218  0.782  0.000  1.0
  O  O31  1  0.770  0.349  0.250  1.0
  O  O32  1  0.350  0.771  0.250  1.0
  O  O33  1  0.229  0.650  0.750  1.0
  O  O34  1  0.651  0.230  0.750  1.0
  O  O35  1  0.902  0.320  0.958  1.0
  O  O36  1  0.320  0.902  0.958  1.0
  O  O37  1  0.098  0.680  0.042  1.0
  O  O38  1  0.680  0.098  0.042  1.0
  O  O39  1  0.953  0.518  0.829  1.0
  O  O40  1  0.514  0.952  0.803  1.0
  O  O41  1  0.048  0.486  0.197  1.0
  O  O42  1  0.482  0.047  0.171  1.0
  O  O43  1  0.794  0.381  0.554  1.0
  O  O44  1  0.382  0.794  0.554  1.0
  O  O45  1  0.206  0.618  0.446  1.0
  O  O46  1  0.619  0.206  0.446  1.0
  O  O47  1  0.980  0.510  0.514  1.0
  O  O48  1  0.490  0.020  0.486  1.0
[/CIF]
.
The material structure described by K2Ba5Si12O30 crystallizes in the monoclinic C2 space group. K(1) is bonded in a 7-coordinate geometry to one O(10), one O(11), one O(14), one O(15), one O(5), one O(6), and one O(7) atom. There are three inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 7-coordinate geometry to one O(10), one O(11), one O(12), one O(13), one O(14), one O(15), and one O(4) atom. In the second Ba site, Ba(2) is bonded in a distorted body-centered cubic geometry to two equivalent O(14), two equivalent O(15), two equivalent O(8), and two equivalent O(9) atoms. In the third Ba site, Ba(3) is bonded in a 9-coordinate geometry to one O(1), one O(10), one O(11), one O(2), one O(3), two equivalent O(12), and two equivalent O(13) atoms. There are six inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(10), one O(4), one O(6), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(11), one O(4), one O(7), and one O(9) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(12), one O(16), and one O(2) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(1), one O(13), one O(16), and one O(3) atom to form corner-sharing SiO4 tetrahedra. In the fifth Si site, Si(5) is bonded to one O(14), one O(3), one O(5), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the sixth Si site, Si(6) is bonded to one O(15), one O(2), one O(5), and one O(9) atom to form corner-sharing SiO4 tetrahedra. There are sixteen inequivalent O sites. In the first O site, O(1) is bonded in a distorted linear geometry to one Ba(3), one Si(3), and one Si(4) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Ba(3), one Si(3), and one Si(6) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Ba(3), one Si(4), and one Si(5) atom. In the fourth O site, O(4) is bonded in a distorted bent 150 degrees geometry to one Ba(1), one Si(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one K(1), one Si(5), and one Si(6) atom. In the sixth O site, O(6) is bonded in a 2-coordinate geometry to two equivalent K(1) and two equivalent Si(1) atoms. In the seventh O site, O(7) is bonded in a 2-coordinate geometry to two equivalent K(1) and two equivalent Si(2) atoms. In the eighth O site, O(8) is bonded in a 2-coordinate geometry to one Ba(2), one Si(1), and one Si(5) atom. In the ninth O site, O(9) is bonded in a 2-coordinate geometry to one Ba(2), one Si(2), and one Si(6) atom. In the tenth O site, O(10) is bonded in a distorted single-bond geometry to one K(1), one Ba(1), one Ba(3), and one Si(1) atom. In the eleventh O site, O(11) is bonded in a distorted single-bond geometry to one K(1), one Ba(1), one Ba(3), and one Si(2) atom. In the twelfth O site, O(12) is bonded in a distorted single-bond geometry to one Ba(1), two equivalent Ba(3), and one Si(3) atom. In the thirteenth O site, O(13) is bonded in a distorted single-bond geometry to one Ba(1), two equivalent Ba(3), and one Si(4) atom. In the fourteenth O site, O(14) is bonded in a distorted single-bond geometry to one K(1), one Ba(1), one Ba(2), and one Si(5) atom. In the fifteenth O site, O(15) is bonded in a distorted single-bond geometry to one K(1), one Ba(1), one Ba(2), and one Si(6) atom. In the sixteenth O site, O(16) is bonded in a linear geometry to one Si(3) and one Si(4) atom. is represented by the CIF card [CIF]
data_K2Ba5(Si2O5)6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   12.704
_cell_length_b   12.704
_cell_length_c   8.376
_cell_angle_alpha   88.103
_cell_angle_beta   88.103
_cell_angle_gamma   35.975
_symmetry_Int_Tables_number   1
_cell_volume   793.587
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.051  0.051  0.747  1.0
  K  K1  1  0.949  0.949  0.253  1.0
  Ba  Ba2  1  0.650  0.646  0.759  1.0
  Ba  Ba3  1  0.354  0.350  0.241  1.0
  Ba  Ba4  1  0.500  0.500  0.500  1.0
  Ba  Ba5  1  0.803  0.805  0.995  1.0
  Ba  Ba6  1  0.195  0.197  0.005  1.0
  Si  Si7  1  0.763  0.358  0.051  1.0
  Si  Si8  1  0.358  0.764  0.051  1.0
  Si  Si9  1  0.236  0.642  0.949  1.0
  Si  Si10  1  0.642  0.237  0.949  1.0
  Si  Si11  1  0.060  0.486  0.681  1.0
  Si  Si12  1  0.477  0.071  0.669  1.0
  Si  Si13  1  0.929  0.523  0.331  1.0
  Si  Si14  1  0.514  0.940  0.319  1.0
  Si  Si15  1  0.898  0.302  0.386  1.0
  Si  Si16  1  0.302  0.899  0.387  1.0
  Si  Si17  1  0.101  0.698  0.613  1.0
  Si  Si18  1  0.698  0.102  0.614  1.0
  O  O19  1  0.277  0.286  0.690  1.0
  O  O20  1  0.714  0.723  0.310  1.0
  O  O21  1  0.036  0.635  0.684  1.0
  O  O22  1  0.626  0.045  0.686  1.0
  O  O23  1  0.955  0.374  0.314  1.0
  O  O24  1  0.365  0.964  0.316  1.0
  O  O25  1  0.560  0.560  1.000  1.0
  O  O26  1  0.440  0.440  0.000  1.0
  O  O27  1  0.080  0.081  0.393  1.0
  O  O28  1  0.919  0.920  0.607  1.0
  O  O29  1  0.782  0.218  0.000  1.0
  O  O30  1  0.218  0.782  0.000  1.0
  O  O31  1  0.770  0.349  0.250  1.0
  O  O32  1  0.350  0.771  0.250  1.0
  O  O33  1  0.229  0.650  0.750  1.0
  O  O34  1  0.651  0.230  0.750  1.0
  O  O35  1  0.902  0.320  0.958  1.0
  O  O36  1  0.320  0.902  0.958  1.0
  O  O37  1  0.098  0.680  0.042  1.0
  O  O38  1  0.680  0.098  0.042  1.0
  O  O39  1  0.953  0.518  0.829  1.0
  O  O40  1  0.514  0.952  0.803  1.0
  O  O41  1  0.048  0.486  0.197  1.0
  O  O42  1  0.482  0.047  0.171  1.0
  O  O43  1  0.794  0.381  0.554  1.0
  O  O44  1  0.382  0.794  0.554  1.0
  O  O45  1  0.206  0.618  0.446  1.0
  O  O46  1  0.619  0.206  0.446  1.0
  O  O47  1  0.980  0.510  0.514  1.0
  O  O48  1  0.490  0.020  0.486  1.0
[/CIF]
.