The compound described by Si(NCO)4 is Indium-like structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four tetraisocyanatosilane molecules. Si(1) is bonded in a tetrahedral geometry to one N(1), one N(2), one N(3), and one N(4) atom. There are four inequivalent C sites. In the first C site, C(1) is bonded in a linear geometry to one N(4) and one O(1) atom. In the second C site, C(2) is bonded in a linear geometry to one N(3) and one O(4) atom. In the third C site, C(3) is bonded in a linear geometry to one N(2) and one O(2) atom. In the fourth C site, C(4) is bonded in a linear geometry to one N(1) and one O(3) atom. There are four inequivalent N sites. In the first N site, N(4) is bonded in a linear geometry to one Si(1) and one C(1) atom. In the second N site, N(1) is bonded in a linear geometry to one Si(1) and one C(4) atom. In the third N site, N(2) is bonded in a linear geometry to one Si(1) and one C(3) atom. In the fourth N site, N(3) is bonded in a bent 150 degrees geometry to one Si(1) and one C(2) atom. There are four inequivalent O sites. In the first O site, O(1) is bonded in a single-bond geometry to one C(1) atom. In the second O site, O(2) is bonded in a single-bond geometry to one C(3) atom. In the third O site, O(3) is bonded in a single-bond geometry to one C(4) atom. In the fourth O site, O(4) is bonded in a single-bond geometry to one C(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiC4(NO)4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.469
_cell_length_b   7.669
_cell_length_c   11.117
_cell_angle_alpha   90.000
_cell_angle_beta   100.315
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   961.974
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.241  0.362  0.394  1.0
  Si  Si1  1  0.759  0.862  0.106  1.0
  Si  Si2  1  0.759  0.638  0.606  1.0
  Si  Si3  1  0.241  0.138  0.894  1.0
  C  C4  1  0.053  0.350  0.183  1.0
  C  C5  1  0.947  0.850  0.317  1.0
  C  C6  1  0.947  0.650  0.817  1.0
  C  C7  1  0.053  0.150  0.683  1.0
  C  C8  1  0.191  0.577  0.588  1.0
  C  C9  1  0.809  0.077  0.912  1.0
  C  C10  1  0.809  0.423  0.412  1.0
  C  C11  1  0.191  0.923  0.088  1.0
  C  C12  1  0.447  0.524  0.326  1.0
  C  C13  1  0.553  0.024  0.174  1.0
  C  C14  1  0.553  0.476  0.674  1.0
  C  C15  1  0.447  0.976  0.826  1.0
  C  C16  1  0.324  0.018  0.465  1.0
  C  C17  1  0.676  0.518  0.035  1.0
  C  C18  1  0.676  0.982  0.535  1.0
  C  C19  1  0.324  0.482  0.965  1.0
  N  N20  1  0.276  0.158  0.446  1.0
  N  N21  1  0.724  0.658  0.054  1.0
  N  N22  1  0.724  0.842  0.554  1.0
  N  N23  1  0.276  0.342  0.946  1.0
  N  N24  1  0.361  0.456  0.354  1.0
  N  N25  1  0.639  0.956  0.146  1.0
  N  N26  1  0.639  0.544  0.646  1.0
  N  N27  1  0.361  0.044  0.854  1.0
  N  N28  1  0.191  0.472  0.507  1.0
  N  N29  1  0.809  0.972  0.993  1.0
  N  N30  1  0.809  0.528  0.493  1.0
  N  N31  1  0.191  0.028  0.007  1.0
  N  N32  1  0.131  0.357  0.271  1.0
  N  N33  1  0.869  0.857  0.229  1.0
  N  N34  1  0.869  0.643  0.729  1.0
  N  N35  1  0.131  0.143  0.771  1.0
  O  O36  1  0.977  0.342  0.097  1.0
  O  O37  1  0.023  0.842  0.403  1.0
  O  O38  1  0.023  0.658  0.903  1.0
  O  O39  1  0.977  0.158  0.597  1.0
  O  O40  1  0.532  0.591  0.300  1.0
  O  O41  1  0.468  0.091  0.200  1.0
  O  O42  1  0.468  0.409  0.700  1.0
  O  O43  1  0.532  0.909  0.800  1.0
  O  O44  1  0.368  0.880  0.488  1.0
  O  O45  1  0.632  0.380  0.012  1.0
  O  O46  1  0.632  0.120  0.512  1.0
  O  O47  1  0.368  0.620  0.988  1.0
  O  O48  1  0.187  0.676  0.668  1.0
  O  O49  1  0.813  0.176  0.832  1.0
  O  O50  1  0.813  0.324  0.332  1.0
  O  O51  1  0.187  0.824  0.168  1.0
[/CIF]
.
The compound described by Si(NCO)4 is Indium-like structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four tetraisocyanatosilane molecules. Si(1) is bonded in a tetrahedral geometry to one N(1), one N(2), one N(3), and one N(4) atom. There are four inequivalent C sites. In the first C site, C(1) is bonded in a linear geometry to one N(4) and one O(1) atom. In the second C site, C(2) is bonded in a linear geometry to one N(3) and one O(4) atom. In the third C site, C(3) is bonded in a linear geometry to one N(2) and one O(2) atom. In the fourth C site, C(4) is bonded in a linear geometry to one N(1) and one O(3) atom. There are four inequivalent N sites. In the first N site, N(4) is bonded in a linear geometry to one Si(1) and one C(1) atom. In the second N site, N(1) is bonded in a linear geometry to one Si(1) and one C(4) atom. In the third N site, N(2) is bonded in a linear geometry to one Si(1) and one C(3) atom. In the fourth N site, N(3) is bonded in a bent 150 degrees geometry to one Si(1) and one C(2) atom. There are four inequivalent O sites. In the first O site, O(1) is bonded in a single-bond geometry to one C(1) atom. In the second O site, O(2) is bonded in a single-bond geometry to one C(3) atom. In the third O site, O(3) is bonded in a single-bond geometry to one C(4) atom. In the fourth O site, O(4) is bonded in a single-bond geometry to one C(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiC4(NO)4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   11.469
_cell_length_b   7.669
_cell_length_c   11.117
_cell_angle_alpha   90.000
_cell_angle_beta   100.315
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   961.974
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.241  0.362  0.394  1.0
  Si  Si1  1  0.759  0.862  0.106  1.0
  Si  Si2  1  0.759  0.638  0.606  1.0
  Si  Si3  1  0.241  0.138  0.894  1.0
  C  C4  1  0.053  0.350  0.183  1.0
  C  C5  1  0.947  0.850  0.317  1.0
  C  C6  1  0.947  0.650  0.817  1.0
  C  C7  1  0.053  0.150  0.683  1.0
  C  C8  1  0.191  0.577  0.588  1.0
  C  C9  1  0.809  0.077  0.912  1.0
  C  C10  1  0.809  0.423  0.412  1.0
  C  C11  1  0.191  0.923  0.088  1.0
  C  C12  1  0.447  0.524  0.326  1.0
  C  C13  1  0.553  0.024  0.174  1.0
  C  C14  1  0.553  0.476  0.674  1.0
  C  C15  1  0.447  0.976  0.826  1.0
  C  C16  1  0.324  0.018  0.465  1.0
  C  C17  1  0.676  0.518  0.035  1.0
  C  C18  1  0.676  0.982  0.535  1.0
  C  C19  1  0.324  0.482  0.965  1.0
  N  N20  1  0.276  0.158  0.446  1.0
  N  N21  1  0.724  0.658  0.054  1.0
  N  N22  1  0.724  0.842  0.554  1.0
  N  N23  1  0.276  0.342  0.946  1.0
  N  N24  1  0.361  0.456  0.354  1.0
  N  N25  1  0.639  0.956  0.146  1.0
  N  N26  1  0.639  0.544  0.646  1.0
  N  N27  1  0.361  0.044  0.854  1.0
  N  N28  1  0.191  0.472  0.507  1.0
  N  N29  1  0.809  0.972  0.993  1.0
  N  N30  1  0.809  0.528  0.493  1.0
  N  N31  1  0.191  0.028  0.007  1.0
  N  N32  1  0.131  0.357  0.271  1.0
  N  N33  1  0.869  0.857  0.229  1.0
  N  N34  1  0.869  0.643  0.729  1.0
  N  N35  1  0.131  0.143  0.771  1.0
  O  O36  1  0.977  0.342  0.097  1.0
  O  O37  1  0.023  0.842  0.403  1.0
  O  O38  1  0.023  0.658  0.903  1.0
  O  O39  1  0.977  0.158  0.597  1.0
  O  O40  1  0.532  0.591  0.300  1.0
  O  O41  1  0.468  0.091  0.200  1.0
  O  O42  1  0.468  0.409  0.700  1.0
  O  O43  1  0.532  0.909  0.800  1.0
  O  O44  1  0.368  0.880  0.488  1.0
  O  O45  1  0.632  0.380  0.012  1.0
  O  O46  1  0.632  0.120  0.512  1.0
  O  O47  1  0.368  0.620  0.988  1.0
  O  O48  1  0.187  0.676  0.668  1.0
  O  O49  1  0.813  0.176  0.832  1.0
  O  O50  1  0.813  0.324  0.332  1.0
  O  O51  1  0.187  0.824  0.168  1.0
[/CIF]
.