The structure described by SiO2 is High (Orthorhombic) Tridymite structured and crystallizes in the monoclinic P2_1 space group. Si(1,2) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to two equivalent Si(1,2) atoms. In the second O site, O(2) is bonded in a linear geometry to two equivalent Si(1,2) atoms. In the third O site, O(3) is bonded in a bent 150 degrees geometry to two equivalent Si(1,2) atoms. In the fourth O site, O(4) is bonded in a linear geometry to two equivalent Si(1,2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.465
_cell_length_b   5.187
_cell_length_c   5.227
_cell_angle_alpha   60.784
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   200.278
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.939  0.622  0.648  1.0
  Si  Si1  1  0.439  0.378  0.352  1.0
  Si  Si2  1  0.064  0.289  0.314  1.0
  Si  Si3  1  0.564  0.711  0.686  1.0
  O  O4  1  0.027  0.939  0.471  1.0
  O  O5  1  0.527  0.061  0.529  1.0
  O  O6  1  0.012  0.441  0.974  1.0
  O  O7  1  0.465  0.564  0.524  1.0
  O  O8  1  0.251  0.334  0.334  1.0
  O  O9  1  0.512  0.559  0.026  1.0
  O  O10  1  0.965  0.436  0.476  1.0
  O  O11  1  0.751  0.666  0.666  1.0
[/CIF]
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The structure described by SiO2 is High (Orthorhombic) Tridymite structured and crystallizes in the monoclinic P2_1 space group. Si(1,2) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to two equivalent Si(1,2) atoms. In the second O site, O(2) is bonded in a linear geometry to two equivalent Si(1,2) atoms. In the third O site, O(3) is bonded in a bent 150 degrees geometry to two equivalent Si(1,2) atoms. In the fourth O site, O(4) is bonded in a linear geometry to two equivalent Si(1,2) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.465
_cell_length_b   5.187
_cell_length_c   5.227
_cell_angle_alpha   60.784
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   200.278
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.939  0.622  0.648  1.0
  Si  Si1  1  0.439  0.378  0.352  1.0
  Si  Si2  1  0.064  0.289  0.314  1.0
  Si  Si3  1  0.564  0.711  0.686  1.0
  O  O4  1  0.027  0.939  0.471  1.0
  O  O5  1  0.527  0.061  0.529  1.0
  O  O6  1  0.012  0.441  0.974  1.0
  O  O7  1  0.465  0.564  0.524  1.0
  O  O8  1  0.251  0.334  0.334  1.0
  O  O9  1  0.512  0.559  0.026  1.0
  O  O10  1  0.965  0.436  0.476  1.0
  O  O11  1  0.751  0.666  0.666  1.0
[/CIF]
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