The material structure described by Ba(GaTe2)2 crystallizes in the tetragonal I422 space group. Ba(1) is bonded in a 8-coordinate geometry to eight equivalent Te(1) atoms. Ga(1) is bonded to four equivalent Te(1) atoms to form edge-sharing GaTe4 tetrahedra. Te(1) is bonded to two equivalent Ba(1) and two equivalent Ga(1) atoms to form a mixture of distorted edge and corner-sharing TeBa2Ga2 trigonal pyramids. is represented by the CIF card [CIF]
data_Ba(GaTe2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.778
_cell_length_b   6.983
_cell_length_c   6.983
_cell_angle_alpha   76.369
_cell_angle_beta   60.964
_cell_angle_gamma   60.964
_symmetry_Int_Tables_number   1
_cell_volume   252.630
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.750  1.000  0.000  1.0
  Ga  Ga1  1  0.250  0.500  0.500  1.0
  Ga  Ga2  1  0.750  0.500  0.500  1.0
  Te  Te3  1  0.167  0.500  0.167  1.0
  Te  Te4  1  0.333  0.833  0.500  1.0
  Te  Te5  1  0.666  0.167  0.500  1.0
  Te  Te6  1  0.834  0.500  0.833  1.0
[/CIF]
.
The material structure described by Ba(GaTe2)2 crystallizes in the tetragonal I422 space group. Ba(1) is bonded in a 8-coordinate geometry to eight equivalent Te(1) atoms. Ga(1) is bonded to four equivalent Te(1) atoms to form edge-sharing GaTe4 tetrahedra. Te(1) is bonded to two equivalent Ba(1) and two equivalent Ga(1) atoms to form a mixture of distorted edge and corner-sharing TeBa2Ga2 trigonal pyramids. is represented by the CIF card [CIF]
data_Ba(GaTe2)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.778
_cell_length_b   6.983
_cell_length_c   6.983
_cell_angle_alpha   76.369
_cell_angle_beta   60.964
_cell_angle_gamma   60.964
_symmetry_Int_Tables_number   1
_cell_volume   252.630
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.750  1.000  0.000  1.0
  Ga  Ga1  1  0.250  0.500  0.500  1.0
  Ga  Ga2  1  0.750  0.500  0.500  1.0
  Te  Te3  1  0.167  0.500  0.167  1.0
  Te  Te4  1  0.333  0.833  0.500  1.0
  Te  Te5  1  0.666  0.167  0.500  1.0
  Te  Te6  1  0.834  0.500  0.833  1.0
[/CIF]
.