The crystal structure described by V5W5Si6 is Khatyrkite-derived structured and crystallizes in the monoclinic Cm space group. There are five inequivalent V sites. In the first V site, V(1) is bonded in a 5-coordinate geometry to one W(3), two equivalent W(4), one Si(3), one Si(5), two equivalent Si(1), and two equivalent Si(4) atoms. In the second V site, V(2) is bonded in a 5-coordinate geometry to two equivalent V(3), one W(2), two equivalent W(4), one Si(2), one Si(4), two equivalent Si(1), and two equivalent Si(5) atoms. In the third V site, V(3) is bonded in a 15-coordinate geometry to one V(5), two equivalent V(2), one W(2), one W(3), two equivalent W(1), two equivalent W(4), one Si(3), one Si(5), two equivalent Si(1), and two equivalent Si(2) atoms. In the fourth V site, V(4) is bonded in a 9-coordinate geometry to one W(1), two equivalent W(4), one Si(2), one Si(4), two equivalent Si(1), and two equivalent Si(3) atoms. In the fifth V site, V(5) is bonded in a 11-coordinate geometry to one V(3), two equivalent W(3), two equivalent W(4), one Si(3), one Si(4), two equivalent Si(1), and two equivalent Si(2) atoms. There are four inequivalent W sites. In the first W site, W(1) is bonded in a 7-coordinate geometry to one V(4), two equivalent V(3), one Si(2), one Si(5), two equivalent Si(1), and two equivalent Si(3) atoms. In the second W site, W(2) is bonded in a 7-coordinate geometry to one V(2), one V(3), one Si(3), one Si(4), two equivalent Si(1), and two equivalent Si(5) atoms. In the third W site, W(3) is bonded in a 9-coordinate geometry to one V(1), one V(3), two equivalent V(5), one Si(2), one Si(5), two equivalent Si(1), and two equivalent Si(4) atoms. In the fourth W site, W(4) is bonded in a 11-coordinate geometry to one V(1), one V(2), one V(3), one V(4), one V(5), two equivalent W(4), one Si(2), one Si(3), one Si(4), and one Si(5) atom. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded in a 10-coordinate geometry to one V(1), one V(2), one V(3), one V(4), one V(5), one W(1), one W(2), one W(3), and two equivalent Si(1) atoms. In the second Si site, Si(2) is bonded in a 10-coordinate geometry to one V(2), one V(4), two equivalent V(3), two equivalent V(5), one W(1), one W(3), and two equivalent W(4) atoms. In the third Si site, Si(3) is bonded in a 10-coordinate geometry to one V(1), one V(3), one V(5), two equivalent V(4), one W(2), two equivalent W(1), and two equivalent W(4) atoms. In the fourth Si site, Si(4) is bonded in a 10-coordinate geometry to one V(2), one V(4), one V(5), two equivalent V(1), one W(2), two equivalent W(3), and two equivalent W(4) atoms. In the fifth Si site, Si(5) is bonded in a 10-coordinate geometry to one V(1), one V(3), two equivalent V(2), one W(1), one W(3), two equivalent W(2), and two equivalent W(4) atoms. is represented by the CIF card [CIF]
data_V5Si6W5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.959
_cell_length_b   7.151
_cell_length_c   7.159
_cell_angle_alpha   96.639
_cell_angle_beta   110.265
_cell_angle_gamma   69.712
_symmetry_Int_Tables_number   1
_cell_volume   223.400
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.427  0.850  0.704  1.0
  V  V1  1  0.573  0.150  0.297  1.0
  V  V2  1  0.926  0.298  0.151  1.0
  V  V3  1  0.071  0.704  0.847  1.0
  V  V4  1  0.725  0.701  0.152  1.0
  Si  Si5  1  0.255  0.996  0.002  1.0
  Si  Si6  1  0.750  0.996  0.002  1.0
  Si  Si7  1  0.331  0.498  0.161  1.0
  Si  Si8  1  0.668  0.508  0.843  1.0
  Si  Si9  1  0.830  0.839  0.498  1.0
  Si  Si10  1  0.168  0.160  0.496  1.0
  W  W11  1  0.276  0.299  0.850  1.0
  W  W12  1  0.776  0.150  0.702  1.0
  W  W13  1  0.224  0.849  0.298  1.0
  W  W14  1  0.249  0.500  0.499  1.0
  W  W15  1  0.749  0.500  0.499  1.0
[/CIF]
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The crystal structure described by V5W5Si6 is Khatyrkite-derived structured and crystallizes in the monoclinic Cm space group. There are five inequivalent V sites. In the first V site, V(1) is bonded in a 5-coordinate geometry to one W(3), two equivalent W(4), one Si(3), one Si(5), two equivalent Si(1), and two equivalent Si(4) atoms. In the second V site, V(2) is bonded in a 5-coordinate geometry to two equivalent V(3), one W(2), two equivalent W(4), one Si(2), one Si(4), two equivalent Si(1), and two equivalent Si(5) atoms. In the third V site, V(3) is bonded in a 15-coordinate geometry to one V(5), two equivalent V(2), one W(2), one W(3), two equivalent W(1), two equivalent W(4), one Si(3), one Si(5), two equivalent Si(1), and two equivalent Si(2) atoms. In the fourth V site, V(4) is bonded in a 9-coordinate geometry to one W(1), two equivalent W(4), one Si(2), one Si(4), two equivalent Si(1), and two equivalent Si(3) atoms. In the fifth V site, V(5) is bonded in a 11-coordinate geometry to one V(3), two equivalent W(3), two equivalent W(4), one Si(3), one Si(4), two equivalent Si(1), and two equivalent Si(2) atoms. There are four inequivalent W sites. In the first W site, W(1) is bonded in a 7-coordinate geometry to one V(4), two equivalent V(3), one Si(2), one Si(5), two equivalent Si(1), and two equivalent Si(3) atoms. In the second W site, W(2) is bonded in a 7-coordinate geometry to one V(2), one V(3), one Si(3), one Si(4), two equivalent Si(1), and two equivalent Si(5) atoms. In the third W site, W(3) is bonded in a 9-coordinate geometry to one V(1), one V(3), two equivalent V(5), one Si(2), one Si(5), two equivalent Si(1), and two equivalent Si(4) atoms. In the fourth W site, W(4) is bonded in a 11-coordinate geometry to one V(1), one V(2), one V(3), one V(4), one V(5), two equivalent W(4), one Si(2), one Si(3), one Si(4), and one Si(5) atom. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded in a 10-coordinate geometry to one V(1), one V(2), one V(3), one V(4), one V(5), one W(1), one W(2), one W(3), and two equivalent Si(1) atoms. In the second Si site, Si(2) is bonded in a 10-coordinate geometry to one V(2), one V(4), two equivalent V(3), two equivalent V(5), one W(1), one W(3), and two equivalent W(4) atoms. In the third Si site, Si(3) is bonded in a 10-coordinate geometry to one V(1), one V(3), one V(5), two equivalent V(4), one W(2), two equivalent W(1), and two equivalent W(4) atoms. In the fourth Si site, Si(4) is bonded in a 10-coordinate geometry to one V(2), one V(4), one V(5), two equivalent V(1), one W(2), two equivalent W(3), and two equivalent W(4) atoms. In the fifth Si site, Si(5) is bonded in a 10-coordinate geometry to one V(1), one V(3), two equivalent V(2), one W(1), one W(3), two equivalent W(2), and two equivalent W(4) atoms. is represented by the CIF card [CIF]
data_V5Si6W5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.959
_cell_length_b   7.151
_cell_length_c   7.159
_cell_angle_alpha   96.639
_cell_angle_beta   110.265
_cell_angle_gamma   69.712
_symmetry_Int_Tables_number   1
_cell_volume   223.400
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.427  0.850  0.704  1.0
  V  V1  1  0.573  0.150  0.297  1.0
  V  V2  1  0.926  0.298  0.151  1.0
  V  V3  1  0.071  0.704  0.847  1.0
  V  V4  1  0.725  0.701  0.152  1.0
  Si  Si5  1  0.255  0.996  0.002  1.0
  Si  Si6  1  0.750  0.996  0.002  1.0
  Si  Si7  1  0.331  0.498  0.161  1.0
  Si  Si8  1  0.668  0.508  0.843  1.0
  Si  Si9  1  0.830  0.839  0.498  1.0
  Si  Si10  1  0.168  0.160  0.496  1.0
  W  W11  1  0.276  0.299  0.850  1.0
  W  W12  1  0.776  0.150  0.702  1.0
  W  W13  1  0.224  0.849  0.298  1.0
  W  W14  1  0.249  0.500  0.499  1.0
  W  W15  1  0.749  0.500  0.499  1.0
[/CIF]
.