The material described by AgCd2GaS2Se2 is Clathrate-derived structured and crystallizes in the monoclinic Cm space group. Ag(1) is bonded to one Se(1), one S(2), and two equivalent S(1) atoms to form AgSeS3 tetrahedra that share corners with two equivalent Ag(1)SeS3 tetrahedra, corners with three equivalent Cd(1)Se3S tetrahedra, corners with three equivalent Cd(2)Se3S tetrahedra, and corners with four equivalent Ga(1)SeS3 tetrahedra. There are two inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one Se(2), two equivalent Se(1), and one S(2) atom to form CdSe3S tetrahedra that share corners with two equivalent Cd(1)Se3S tetrahedra, corners with three equivalent Ag(1)SeS3 tetrahedra, corners with three equivalent Ga(1)SeS3 tetrahedra, and corners with four equivalent Cd(2)Se3S tetrahedra. In the second Cd site, Cd(2) is bonded to one Se(1), two equivalent Se(2), and one S(1) atom to form CdSe3S tetrahedra that share corners with two equivalent Cd(2)Se3S tetrahedra, corners with three equivalent Ag(1)SeS3 tetrahedra, corners with three equivalent Ga(1)SeS3 tetrahedra, and corners with four equivalent Cd(1)Se3S tetrahedra. Ga(1) is bonded to one Se(2), one S(1), and two equivalent S(2) atoms to form GaSeS3 tetrahedra that share corners with two equivalent Ga(1)SeS3 tetrahedra, corners with three equivalent Cd(1)Se3S tetrahedra, corners with three equivalent Cd(2)Se3S tetrahedra, and corners with four equivalent Ag(1)SeS3 tetrahedra. There are two inequivalent Se sites. In the first Se site, Se(1) is bonded to one Ag(1), one Cd(2), and two equivalent Cd(1) atoms to form SeCd3Ag tetrahedra that share corners with two equivalent Se(1)Cd3Ag tetrahedra, corners with three equivalent S(2)CdGa2Ag tetrahedra, corners with three equivalent S(1)CdGaAg2 tetrahedra, and corners with four equivalent Se(2)Cd3Ga tetrahedra. In the second Se site, Se(2) is bonded to one Cd(1), two equivalent Cd(2), and one Ga(1) atom to form SeCd3Ga tetrahedra that share corners with two equivalent Se(2)Cd3Ga tetrahedra, corners with three equivalent S(2)CdGa2Ag tetrahedra, corners with three equivalent S(1)CdGaAg2 tetrahedra, and corners with four equivalent Se(1)Cd3Ag tetrahedra. There are two inequivalent S sites. In the first S site, S(1) is bonded to two equivalent Ag(1), one Cd(2), and one Ga(1) atom to form SCdGaAg2 tetrahedra that share corners with two equivalent S(1)CdGaAg2 tetrahedra, corners with three equivalent Se(1)Cd3Ag tetrahedra, corners with three equivalent Se(2)Cd3Ga tetrahedra, and corners with four equivalent S(2)CdGa2Ag tetrahedra. In the second S site, S(2) is bonded to one Ag(1), one Cd(1), and two equivalent Ga(1) atoms to form SCdGa2Ag tetrahedra that share corners with two equivalent S(2)CdGa2Ag tetrahedra, corners with three equivalent Se(1)Cd3Ag tetrahedra, corners with three equivalent Se(2)Cd3Ga tetrahedra, and corners with four equivalent S(1)CdGaAg2 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_Cd2GaAg(SeS)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.987
_cell_length_b   7.987
_cell_length_c   7.334
_cell_angle_alpha   64.200
_cell_angle_beta   64.200
_cell_angle_gamma   30.044
_symmetry_Int_Tables_number   1
_cell_volume   209.083
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cd  Cd0  1  0.180  0.180  0.490  1.0
  Cd  Cd1  1  0.682  0.682  0.973  1.0
  Ga  Ga2  1  0.444  0.444  0.903  1.0
  Ag  Ag3  1  0.946  0.946  0.382  1.0
  Se  Se4  1  0.754  0.754  0.578  1.0
  Se  Se5  1  0.262  0.262  0.075  1.0
  S  S6  1  0.497  0.497  0.147  1.0
  S  S7  1  0.989  0.989  0.697  1.0
[/CIF]
.
The material described by AgCd2GaS2Se2 is Clathrate-derived structured and crystallizes in the monoclinic Cm space group. Ag(1) is bonded to one Se(1), one S(2), and two equivalent S(1) atoms to form AgSeS3 tetrahedra that share corners with two equivalent Ag(1)SeS3 tetrahedra, corners with three equivalent Cd(1)Se3S tetrahedra, corners with three equivalent Cd(2)Se3S tetrahedra, and corners with four equivalent Ga(1)SeS3 tetrahedra. There are two inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one Se(2), two equivalent Se(1), and one S(2) atom to form CdSe3S tetrahedra that share corners with two equivalent Cd(1)Se3S tetrahedra, corners with three equivalent Ag(1)SeS3 tetrahedra, corners with three equivalent Ga(1)SeS3 tetrahedra, and corners with four equivalent Cd(2)Se3S tetrahedra. In the second Cd site, Cd(2) is bonded to one Se(1), two equivalent Se(2), and one S(1) atom to form CdSe3S tetrahedra that share corners with two equivalent Cd(2)Se3S tetrahedra, corners with three equivalent Ag(1)SeS3 tetrahedra, corners with three equivalent Ga(1)SeS3 tetrahedra, and corners with four equivalent Cd(1)Se3S tetrahedra. Ga(1) is bonded to one Se(2), one S(1), and two equivalent S(2) atoms to form GaSeS3 tetrahedra that share corners with two equivalent Ga(1)SeS3 tetrahedra, corners with three equivalent Cd(1)Se3S tetrahedra, corners with three equivalent Cd(2)Se3S tetrahedra, and corners with four equivalent Ag(1)SeS3 tetrahedra. There are two inequivalent Se sites. In the first Se site, Se(1) is bonded to one Ag(1), one Cd(2), and two equivalent Cd(1) atoms to form SeCd3Ag tetrahedra that share corners with two equivalent Se(1)Cd3Ag tetrahedra, corners with three equivalent S(2)CdGa2Ag tetrahedra, corners with three equivalent S(1)CdGaAg2 tetrahedra, and corners with four equivalent Se(2)Cd3Ga tetrahedra. In the second Se site, Se(2) is bonded to one Cd(1), two equivalent Cd(2), and one Ga(1) atom to form SeCd3Ga tetrahedra that share corners with two equivalent Se(2)Cd3Ga tetrahedra, corners with three equivalent S(2)CdGa2Ag tetrahedra, corners with three equivalent S(1)CdGaAg2 tetrahedra, and corners with four equivalent Se(1)Cd3Ag tetrahedra. There are two inequivalent S sites. In the first S site, S(1) is bonded to two equivalent Ag(1), one Cd(2), and one Ga(1) atom to form SCdGaAg2 tetrahedra that share corners with two equivalent S(1)CdGaAg2 tetrahedra, corners with three equivalent Se(1)Cd3Ag tetrahedra, corners with three equivalent Se(2)Cd3Ga tetrahedra, and corners with four equivalent S(2)CdGa2Ag tetrahedra. In the second S site, S(2) is bonded to one Ag(1), one Cd(1), and two equivalent Ga(1) atoms to form SCdGa2Ag tetrahedra that share corners with two equivalent S(2)CdGa2Ag tetrahedra, corners with three equivalent Se(1)Cd3Ag tetrahedra, corners with three equivalent Se(2)Cd3Ga tetrahedra, and corners with four equivalent S(1)CdGaAg2 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_Cd2GaAg(SeS)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.987
_cell_length_b   7.987
_cell_length_c   7.334
_cell_angle_alpha   64.200
_cell_angle_beta   64.200
_cell_angle_gamma   30.044
_symmetry_Int_Tables_number   1
_cell_volume   209.083
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cd  Cd0  1  0.180  0.180  0.490  1.0
  Cd  Cd1  1  0.682  0.682  0.973  1.0
  Ga  Ga2  1  0.444  0.444  0.903  1.0
  Ag  Ag3  1  0.946  0.946  0.382  1.0
  Se  Se4  1  0.754  0.754  0.578  1.0
  Se  Se5  1  0.262  0.262  0.075  1.0
  S  S6  1  0.497  0.497  0.147  1.0
  S  S7  1  0.989  0.989  0.697  1.0
[/CIF]
.