The material described by V2GaO5 crystallizes in the triclinic P1 space group. There are six inequivalent V sites. In the first V site, V(1) is bonded to one O(14), one O(15), one O(2), one O(3), one O(8), and one O(9) atom to form distorted VO6 octahedra that share corners with two equivalent V(5)O5 trigonal bipyramids,  an edgeedge with one V(2)O6 octahedra,  an edgeedge with one V(6)O6 octahedra,  an edgeedge with one V(3)O5 trigonal bipyramid,  an edgeedge with one V(4)O4 trigonal pyramid, and  an edgeedge with one Ga(2)O4 trigonal pyramid. In the second V site, V(2) is bonded to one O(11), one O(12), one O(2), one O(3), one O(5), and one O(6) atom to form VO6 octahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra, corners with two equivalent V(5)O5 trigonal bipyramids,  a cornercorner with one V(4)O4 trigonal pyramid,  a cornercorner with one Ga(2)O4 trigonal pyramid,  an edgeedge with one V(1)O6 octahedra, and edges with two equivalent V(6)O6 octahedra. In the third V site, V(3) is bonded to one O(13), one O(14), one O(4), one O(7), and one O(8) atom to form distorted VO5 trigonal bipyramids that share  a cornercorner with one V(6)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra,  an edgeedge with one V(1)O6 octahedra,  an edgeedge with one V(5)O5 trigonal bipyramid, and  an edgeedge with one Ga(2)O4 trigonal pyramid. The corner-sharing octahedral tilt angles are 46°. In the fourth V site, V(4) is bonded to one O(10), one O(15), one O(6), and one O(9) atom to form distorted VO4 trigonal pyramids that share  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(2)O4 trigonal pyramid,  an edgeedge with one V(1)O6 octahedra, and  an edgeedge with one V(6)O6 octahedra. The corner-sharing octahedral tilt angles are 18°. In the fifth V site, V(5) is bonded to one O(1), one O(11), one O(2), one O(7), and one O(8) atom to form distorted VO5 trigonal bipyramids that share  a cornercorner with one V(6)O6 octahedra, corners with two equivalent V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  an edgeedge with one Ga(3)O4 tetrahedra, and  an edgeedge with one V(3)O5 trigonal bipyramid. The corner-sharing octahedral tilt angles range from 50-58°. In the sixth V site, V(6) is bonded to one O(11), one O(12), one O(14), one O(15), one O(5), and one O(6) atom to form distorted VO6 octahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one V(3)O5 trigonal bipyramid,  a cornercorner with one V(5)O5 trigonal bipyramid,  an edgeedge with one V(1)O6 octahedra, edges with two equivalent V(2)O6 octahedra, and  an edgeedge with one V(4)O4 trigonal pyramid. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), one O(10), one O(4), and one O(5) atom to form GaO4 tetrahedra that share  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one V(6)O6 octahedra,  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one V(3)O5 trigonal bipyramid,  a cornercorner with one V(5)O5 trigonal bipyramid,  a cornercorner with one V(4)O4 trigonal pyramid, and  a cornercorner with one Ga(2)O4 trigonal pyramid. The corner-sharing octahedral tilt angles range from 54-56°. In the second Ga site, Ga(2) is bonded to one O(13), one O(3), one O(4), and one O(9) atom to form distorted GaO4 trigonal pyramids that share  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one V(4)O4 trigonal pyramid,  an edgeedge with one V(1)O6 octahedra, and  an edgeedge with one V(3)O5 trigonal bipyramid. The corner-sharing octahedral tilt angles are 55°. In the third Ga site, Ga(3) is bonded to one O(1), one O(12), one O(13), and one O(7) atom to form GaO4 tetrahedra that share  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one V(6)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with two equivalent V(3)O5 trigonal bipyramids,  a cornercorner with one Ga(2)O4 trigonal pyramid, and  an edgeedge with one V(5)O5 trigonal bipyramid. The corner-sharing octahedral tilt angles range from 47-54°. There are fifteen inequivalent O sites. In the first O site, O(1) is bonded in a distorted T-shaped geometry to one V(5), one Ga(1), and one Ga(3) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one V(1), one V(2), and one V(5) atom. In the third O site, O(3) is bonded in a distorted T-shaped geometry to one V(1), one V(2), and one Ga(2) atom. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one V(3), one Ga(1), and one Ga(2) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one V(2), one V(6), and one Ga(1) atom. In the sixth O site, O(6) is bonded in a T-shaped geometry to one V(2), one V(4), and one V(6) atom. In the seventh O site, O(7) is bonded in a T-shaped geometry to one V(3), one V(5), and one Ga(3) atom. In the eighth O site, O(8) is bonded in a distorted T-shaped geometry to one V(1), one V(3), and one V(5) atom. In the ninth O site, O(9) is bonded in a distorted T-shaped geometry to one V(1), one V(4), and one Ga(2) atom. In the tenth O site, O(10) is bonded in a bent 120 degrees geometry to one V(4) and one Ga(1) atom. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one V(2), one V(5), and one V(6) atom. In the twelfth O site, O(12) is bonded in a distorted trigonal planar geometry to one V(2), one V(6), and one Ga(3) atom. In the thirteenth O site, O(13) is bonded in a distorted T-shaped geometry to one V(3), one Ga(2), and one Ga(3) atom. In the fourteenth O site, O(14) is bonded in a distorted T-shaped geometry to one V(1), one V(3), and one V(6) atom. In the fifteenth O site, O(15) is bonded in a 3-coordinate geometry to one V(1), one V(4), and one V(6) atom. is represented by the CIF file [CIF]
data_V2GaO5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.080
_cell_length_b   8.033
_cell_length_c   9.548
_cell_angle_alpha   124.142
_cell_angle_beta   104.789
_cell_angle_gamma   90.659
_symmetry_Int_Tables_number   1
_cell_volume   305.936
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.006  0.006  0.005  1.0
  V  V1  1  0.178  0.390  0.387  1.0
  V  V2  1  0.164  0.684  0.043  1.0
  V  V3  1  0.580  0.953  0.694  1.0
  V  V4  1  0.629  0.047  0.299  1.0
  V  V5  1  0.803  0.583  0.619  1.0
  Ga  Ga6  1  0.166  0.246  0.661  1.0
  Ga  Ga7  1  0.905  0.345  0.005  1.0
  Ga  Ga8  1  0.798  0.727  0.336  1.0
  O  O9  1  0.920  0.011  0.473  1.0
  O  O10  1  0.944  0.125  0.245  1.0
  O  O11  1  0.182  0.315  0.159  1.0
  O  O12  1  0.116  0.384  0.884  1.0
  O  O13  1  0.112  0.432  0.600  1.0
  O  O14  1  0.448  0.675  0.556  1.0
  O  O15  1  0.450  0.793  0.271  1.0
  O  O16  1  0.342  0.919  0.067  1.0
  O  O17  1  0.660  0.118  0.943  1.0
  O  O18  1  0.503  0.157  0.678  1.0
  O  O19  1  0.545  0.321  0.452  1.0
  O  O20  1  0.890  0.561  0.412  1.0
  O  O21  1  0.856  0.611  0.116  1.0
  O  O22  1  0.856  0.687  0.850  1.0
  O  O23  1  0.945  0.909  0.744  1.0
[/CIF]
.
The material described by V2GaO5 crystallizes in the triclinic P1 space group. There are six inequivalent V sites. In the first V site, V(1) is bonded to one O(14), one O(15), one O(2), one O(3), one O(8), and one O(9) atom to form distorted VO6 octahedra that share corners with two equivalent V(5)O5 trigonal bipyramids,  an edgeedge with one V(2)O6 octahedra,  an edgeedge with one V(6)O6 octahedra,  an edgeedge with one V(3)O5 trigonal bipyramid,  an edgeedge with one V(4)O4 trigonal pyramid, and  an edgeedge with one Ga(2)O4 trigonal pyramid. In the second V site, V(2) is bonded to one O(11), one O(12), one O(2), one O(3), one O(5), and one O(6) atom to form VO6 octahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra, corners with two equivalent V(5)O5 trigonal bipyramids,  a cornercorner with one V(4)O4 trigonal pyramid,  a cornercorner with one Ga(2)O4 trigonal pyramid,  an edgeedge with one V(1)O6 octahedra, and edges with two equivalent V(6)O6 octahedra. In the third V site, V(3) is bonded to one O(13), one O(14), one O(4), one O(7), and one O(8) atom to form distorted VO5 trigonal bipyramids that share  a cornercorner with one V(6)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra,  an edgeedge with one V(1)O6 octahedra,  an edgeedge with one V(5)O5 trigonal bipyramid, and  an edgeedge with one Ga(2)O4 trigonal pyramid. The corner-sharing octahedral tilt angles are 46°. In the fourth V site, V(4) is bonded to one O(10), one O(15), one O(6), and one O(9) atom to form distorted VO4 trigonal pyramids that share  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(2)O4 trigonal pyramid,  an edgeedge with one V(1)O6 octahedra, and  an edgeedge with one V(6)O6 octahedra. The corner-sharing octahedral tilt angles are 18°. In the fifth V site, V(5) is bonded to one O(1), one O(11), one O(2), one O(7), and one O(8) atom to form distorted VO5 trigonal bipyramids that share  a cornercorner with one V(6)O6 octahedra, corners with two equivalent V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  an edgeedge with one Ga(3)O4 tetrahedra, and  an edgeedge with one V(3)O5 trigonal bipyramid. The corner-sharing octahedral tilt angles range from 50-58°. In the sixth V site, V(6) is bonded to one O(11), one O(12), one O(14), one O(15), one O(5), and one O(6) atom to form distorted VO6 octahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one V(3)O5 trigonal bipyramid,  a cornercorner with one V(5)O5 trigonal bipyramid,  an edgeedge with one V(1)O6 octahedra, edges with two equivalent V(2)O6 octahedra, and  an edgeedge with one V(4)O4 trigonal pyramid. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), one O(10), one O(4), and one O(5) atom to form GaO4 tetrahedra that share  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one V(6)O6 octahedra,  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one V(3)O5 trigonal bipyramid,  a cornercorner with one V(5)O5 trigonal bipyramid,  a cornercorner with one V(4)O4 trigonal pyramid, and  a cornercorner with one Ga(2)O4 trigonal pyramid. The corner-sharing octahedral tilt angles range from 54-56°. In the second Ga site, Ga(2) is bonded to one O(13), one O(3), one O(4), and one O(9) atom to form distorted GaO4 trigonal pyramids that share  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one V(4)O4 trigonal pyramid,  an edgeedge with one V(1)O6 octahedra, and  an edgeedge with one V(3)O5 trigonal bipyramid. The corner-sharing octahedral tilt angles are 55°. In the third Ga site, Ga(3) is bonded to one O(1), one O(12), one O(13), and one O(7) atom to form GaO4 tetrahedra that share  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one V(6)O6 octahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with two equivalent V(3)O5 trigonal bipyramids,  a cornercorner with one Ga(2)O4 trigonal pyramid, and  an edgeedge with one V(5)O5 trigonal bipyramid. The corner-sharing octahedral tilt angles range from 47-54°. There are fifteen inequivalent O sites. In the first O site, O(1) is bonded in a distorted T-shaped geometry to one V(5), one Ga(1), and one Ga(3) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one V(1), one V(2), and one V(5) atom. In the third O site, O(3) is bonded in a distorted T-shaped geometry to one V(1), one V(2), and one Ga(2) atom. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one V(3), one Ga(1), and one Ga(2) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one V(2), one V(6), and one Ga(1) atom. In the sixth O site, O(6) is bonded in a T-shaped geometry to one V(2), one V(4), and one V(6) atom. In the seventh O site, O(7) is bonded in a T-shaped geometry to one V(3), one V(5), and one Ga(3) atom. In the eighth O site, O(8) is bonded in a distorted T-shaped geometry to one V(1), one V(3), and one V(5) atom. In the ninth O site, O(9) is bonded in a distorted T-shaped geometry to one V(1), one V(4), and one Ga(2) atom. In the tenth O site, O(10) is bonded in a bent 120 degrees geometry to one V(4) and one Ga(1) atom. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one V(2), one V(5), and one V(6) atom. In the twelfth O site, O(12) is bonded in a distorted trigonal planar geometry to one V(2), one V(6), and one Ga(3) atom. In the thirteenth O site, O(13) is bonded in a distorted T-shaped geometry to one V(3), one Ga(2), and one Ga(3) atom. In the fourteenth O site, O(14) is bonded in a distorted T-shaped geometry to one V(1), one V(3), and one V(6) atom. In the fifteenth O site, O(15) is bonded in a 3-coordinate geometry to one V(1), one V(4), and one V(6) atom. is represented by the CIF file [CIF]
data_V2GaO5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.080
_cell_length_b   8.033
_cell_length_c   9.548
_cell_angle_alpha   124.142
_cell_angle_beta   104.789
_cell_angle_gamma   90.659
_symmetry_Int_Tables_number   1
_cell_volume   305.936
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.006  0.006  0.005  1.0
  V  V1  1  0.178  0.390  0.387  1.0
  V  V2  1  0.164  0.684  0.043  1.0
  V  V3  1  0.580  0.953  0.694  1.0
  V  V4  1  0.629  0.047  0.299  1.0
  V  V5  1  0.803  0.583  0.619  1.0
  Ga  Ga6  1  0.166  0.246  0.661  1.0
  Ga  Ga7  1  0.905  0.345  0.005  1.0
  Ga  Ga8  1  0.798  0.727  0.336  1.0
  O  O9  1  0.920  0.011  0.473  1.0
  O  O10  1  0.944  0.125  0.245  1.0
  O  O11  1  0.182  0.315  0.159  1.0
  O  O12  1  0.116  0.384  0.884  1.0
  O  O13  1  0.112  0.432  0.600  1.0
  O  O14  1  0.448  0.675  0.556  1.0
  O  O15  1  0.450  0.793  0.271  1.0
  O  O16  1  0.342  0.919  0.067  1.0
  O  O17  1  0.660  0.118  0.943  1.0
  O  O18  1  0.503  0.157  0.678  1.0
  O  O19  1  0.545  0.321  0.452  1.0
  O  O20  1  0.890  0.561  0.412  1.0
  O  O21  1  0.856  0.611  0.116  1.0
  O  O22  1  0.856  0.687  0.850  1.0
  O  O23  1  0.945  0.909  0.744  1.0
[/CIF]
.