The material structure described by GaH13(C2N)2 is Indium-like structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of one GaH13(C2N)2 cluster. Ga(1) is bonded to one N(1), two equivalent N(2), and one H(9) atom to form GaHN3 tetrahedra that share  a cornercorner with one C(1)H3N tetrahedra,  a cornercorner with one C(3)H3N tetrahedra, corners with two equivalent C(2)H3N tetrahedra, corners with two equivalent C(4)H3N tetrahedra, and  an edgeedge with one Ga(1)HN3 tetrahedra. There are four inequivalent C sites. In the first C site, C(1) is bonded to one N(1), one H(3), one H(4), and one H(6) atom to form CH3N tetrahedra that share  a cornercorner with one Ga(1)HN3 tetrahedra and  a cornercorner with one C(3)H3N tetrahedra. In the second C site, C(2) is bonded to one N(2), one H(1), one H(10), and one H(8) atom to form CH3N tetrahedra that share  a cornercorner with one C(4)H3N tetrahedra and corners with two equivalent Ga(1)HN3 tetrahedra. In the third C site, C(3) is bonded to one N(1), one H(11), one H(5), and one H(7) atom to form CH3N tetrahedra that share  a cornercorner with one Ga(1)HN3 tetrahedra and  a cornercorner with one C(1)H3N tetrahedra. In the fourth C site, C(4) is bonded to one N(2), one H(12), one H(13), and one H(2) atom to form CH3N tetrahedra that share  a cornercorner with one C(2)H3N tetrahedra and corners with two equivalent Ga(1)HN3 tetrahedra. There are two inequivalent N sites. In the first N site, N(1) is bonded in a trigonal planar geometry to one Ga(1), one C(1), and one C(3) atom. In the second N site, N(2) is bonded to two equivalent Ga(1), one C(2), and one C(4) atom to form edge-sharing NGa2C2 tetrahedra. There are thirteen inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(2) atom. In the second H site, H(2) is bonded in a single-bond geometry to one C(4) atom. In the third H site, H(3) is bonded in a single-bond geometry to one C(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one C(1) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one C(3) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one C(1) atom. In the seventh H site, H(7) is bonded in a single-bond geometry to one C(3) atom. In the eighth H site, H(8) is bonded in a single-bond geometry to one C(2) atom. In the ninth H site, H(9) is bonded in a single-bond geometry to one Ga(1) atom. In the tenth H site, H(10) is bonded in a single-bond geometry to one C(2) atom. In the eleventh H site, H(11) is bonded in a single-bond geometry to one C(3) atom. In the twelfth H site, H(12) is bonded in a single-bond geometry to one C(4) atom. In the thirteenth H site, H(13) is bonded in a single-bond geometry to one C(4) atom. is represented by the CIF file [CIF]
data_GaH13(C2N)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.433
_cell_length_b   7.166
_cell_length_c   8.846
_cell_angle_alpha   81.746
_cell_angle_beta   73.550
_cell_angle_gamma   76.635
_symmetry_Int_Tables_number   1
_cell_volume   379.177
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.452  0.911  0.875  1.0
  Ga  Ga1  1  0.548  0.089  0.125  1.0
  H  H2  1  0.285  0.624  0.186  1.0
  H  H3  1  0.289  0.362  0.775  1.0
  H  H4  1  0.034  0.157  0.432  1.0
  H  H5  1  0.711  0.638  0.225  1.0
  H  H6  1  0.952  0.788  0.772  1.0
  H  H7  1  0.407  0.761  0.607  1.0
  H  H8  1  0.978  0.601  0.652  1.0
  H  H9  1  0.341  0.408  0.454  1.0
  H  H10  1  0.312  0.762  0.330  1.0
  H  H11  1  0.715  0.376  0.814  1.0
  H  H12  1  0.794  0.077  0.124  1.0
  H  H13  1  0.849  0.128  0.805  1.0
  H  H14  1  0.641  0.838  0.471  1.0
  H  H15  1  0.688  0.238  0.670  1.0
  H  H16  1  0.848  0.712  0.028  1.0
  H  H17  1  0.680  0.535  0.063  1.0
  H  H18  1  0.048  0.212  0.228  1.0
  H  H19  1  0.966  0.843  0.568  1.0
  H  H20  1  0.593  0.239  0.393  1.0
  H  H21  1  0.152  0.288  0.972  1.0
  H  H22  1  0.022  0.399  0.348  1.0
  H  H23  1  0.320  0.465  0.937  1.0
  H  H24  1  0.659  0.592  0.546  1.0
  H  H25  1  0.206  0.923  0.876  1.0
  H  H26  1  0.359  0.162  0.529  1.0
  H  H27  1  0.151  0.872  0.195  1.0
  C  C28  1  0.103  0.248  0.325  1.0
  C  C29  1  0.698  0.232  0.793  1.0
  C  C30  1  0.412  0.258  0.421  1.0
  C  C31  1  0.897  0.752  0.675  1.0
  C  C32  1  0.695  0.669  0.102  1.0
  C  C33  1  0.305  0.331  0.898  1.0
  C  C34  1  0.588  0.742  0.579  1.0
  C  C35  1  0.302  0.768  0.207  1.0
  N  N36  1  0.659  0.779  0.711  1.0
  N  N37  1  0.341  0.221  0.289  1.0
  N  N38  1  0.501  0.824  0.095  1.0
  N  N39  1  0.499  0.176  0.905  1.0
[/CIF]
.
The material structure described by GaH13(C2N)2 is Indium-like structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of one GaH13(C2N)2 cluster. Ga(1) is bonded to one N(1), two equivalent N(2), and one H(9) atom to form GaHN3 tetrahedra that share  a cornercorner with one C(1)H3N tetrahedra,  a cornercorner with one C(3)H3N tetrahedra, corners with two equivalent C(2)H3N tetrahedra, corners with two equivalent C(4)H3N tetrahedra, and  an edgeedge with one Ga(1)HN3 tetrahedra. There are four inequivalent C sites. In the first C site, C(1) is bonded to one N(1), one H(3), one H(4), and one H(6) atom to form CH3N tetrahedra that share  a cornercorner with one Ga(1)HN3 tetrahedra and  a cornercorner with one C(3)H3N tetrahedra. In the second C site, C(2) is bonded to one N(2), one H(1), one H(10), and one H(8) atom to form CH3N tetrahedra that share  a cornercorner with one C(4)H3N tetrahedra and corners with two equivalent Ga(1)HN3 tetrahedra. In the third C site, C(3) is bonded to one N(1), one H(11), one H(5), and one H(7) atom to form CH3N tetrahedra that share  a cornercorner with one Ga(1)HN3 tetrahedra and  a cornercorner with one C(1)H3N tetrahedra. In the fourth C site, C(4) is bonded to one N(2), one H(12), one H(13), and one H(2) atom to form CH3N tetrahedra that share  a cornercorner with one C(2)H3N tetrahedra and corners with two equivalent Ga(1)HN3 tetrahedra. There are two inequivalent N sites. In the first N site, N(1) is bonded in a trigonal planar geometry to one Ga(1), one C(1), and one C(3) atom. In the second N site, N(2) is bonded to two equivalent Ga(1), one C(2), and one C(4) atom to form edge-sharing NGa2C2 tetrahedra. There are thirteen inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one C(2) atom. In the second H site, H(2) is bonded in a single-bond geometry to one C(4) atom. In the third H site, H(3) is bonded in a single-bond geometry to one C(1) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one C(1) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one C(3) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one C(1) atom. In the seventh H site, H(7) is bonded in a single-bond geometry to one C(3) atom. In the eighth H site, H(8) is bonded in a single-bond geometry to one C(2) atom. In the ninth H site, H(9) is bonded in a single-bond geometry to one Ga(1) atom. In the tenth H site, H(10) is bonded in a single-bond geometry to one C(2) atom. In the eleventh H site, H(11) is bonded in a single-bond geometry to one C(3) atom. In the twelfth H site, H(12) is bonded in a single-bond geometry to one C(4) atom. In the thirteenth H site, H(13) is bonded in a single-bond geometry to one C(4) atom. is represented by the CIF file [CIF]
data_GaH13(C2N)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.433
_cell_length_b   7.166
_cell_length_c   8.846
_cell_angle_alpha   81.746
_cell_angle_beta   73.550
_cell_angle_gamma   76.635
_symmetry_Int_Tables_number   1
_cell_volume   379.177
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.452  0.911  0.875  1.0
  Ga  Ga1  1  0.548  0.089  0.125  1.0
  H  H2  1  0.285  0.624  0.186  1.0
  H  H3  1  0.289  0.362  0.775  1.0
  H  H4  1  0.034  0.157  0.432  1.0
  H  H5  1  0.711  0.638  0.225  1.0
  H  H6  1  0.952  0.788  0.772  1.0
  H  H7  1  0.407  0.761  0.607  1.0
  H  H8  1  0.978  0.601  0.652  1.0
  H  H9  1  0.341  0.408  0.454  1.0
  H  H10  1  0.312  0.762  0.330  1.0
  H  H11  1  0.715  0.376  0.814  1.0
  H  H12  1  0.794  0.077  0.124  1.0
  H  H13  1  0.849  0.128  0.805  1.0
  H  H14  1  0.641  0.838  0.471  1.0
  H  H15  1  0.688  0.238  0.670  1.0
  H  H16  1  0.848  0.712  0.028  1.0
  H  H17  1  0.680  0.535  0.063  1.0
  H  H18  1  0.048  0.212  0.228  1.0
  H  H19  1  0.966  0.843  0.568  1.0
  H  H20  1  0.593  0.239  0.393  1.0
  H  H21  1  0.152  0.288  0.972  1.0
  H  H22  1  0.022  0.399  0.348  1.0
  H  H23  1  0.320  0.465  0.937  1.0
  H  H24  1  0.659  0.592  0.546  1.0
  H  H25  1  0.206  0.923  0.876  1.0
  H  H26  1  0.359  0.162  0.529  1.0
  H  H27  1  0.151  0.872  0.195  1.0
  C  C28  1  0.103  0.248  0.325  1.0
  C  C29  1  0.698  0.232  0.793  1.0
  C  C30  1  0.412  0.258  0.421  1.0
  C  C31  1  0.897  0.752  0.675  1.0
  C  C32  1  0.695  0.669  0.102  1.0
  C  C33  1  0.305  0.331  0.898  1.0
  C  C34  1  0.588  0.742  0.579  1.0
  C  C35  1  0.302  0.768  0.207  1.0
  N  N36  1  0.659  0.779  0.711  1.0
  N  N37  1  0.341  0.221  0.289  1.0
  N  N38  1  0.501  0.824  0.095  1.0
  N  N39  1  0.499  0.176  0.905  1.0
[/CIF]
.