The material described by InGaAs2 is Chalcopyrite-like structured and crystallizes in the tetragonal P-4m2 space group. In(1) is bonded to four equivalent As(1) atoms to form InAs4 tetrahedra that share corners with four equivalent In(1)As4 tetrahedra and corners with eight equivalent Ga(1)As4 tetrahedra. Ga(1) is bonded to four equivalent As(1) atoms to form GaAs4 tetrahedra that share corners with four equivalent Ga(1)As4 tetrahedra and corners with eight equivalent In(1)As4 tetrahedra. As(1) is bonded to two equivalent In(1) and two equivalent Ga(1) atoms to form corner-sharing AsIn2Ga2 tetrahedra. is represented by the CIF card [CIF]
data_InGaAs2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.225
_cell_length_b   5.962
_cell_length_c   4.225
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   106.428
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.000  0.250  0.500  1.0
  Ga  Ga1  1  0.500  0.750  0.000  1.0
  As  As2  1  0.000  0.982  0.000  1.0
  As  As3  1  0.500  0.518  0.500  1.0
[/CIF]
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The material described by InGaAs2 is Chalcopyrite-like structured and crystallizes in the tetragonal P-4m2 space group. In(1) is bonded to four equivalent As(1) atoms to form InAs4 tetrahedra that share corners with four equivalent In(1)As4 tetrahedra and corners with eight equivalent Ga(1)As4 tetrahedra. Ga(1) is bonded to four equivalent As(1) atoms to form GaAs4 tetrahedra that share corners with four equivalent Ga(1)As4 tetrahedra and corners with eight equivalent In(1)As4 tetrahedra. As(1) is bonded to two equivalent In(1) and two equivalent Ga(1) atoms to form corner-sharing AsIn2Ga2 tetrahedra. is represented by the CIF card [CIF]
data_InGaAs2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.225
_cell_length_b   5.962
_cell_length_c   4.225
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   106.428
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.000  0.250  0.500  1.0
  Ga  Ga1  1  0.500  0.750  0.000  1.0
  As  As2  1  0.000  0.982  0.000  1.0
  As  As3  1  0.500  0.518  0.500  1.0
[/CIF]
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