The compound described by LiAlSiO4 crystallizes in the monoclinic P2 space group. There are three inequivalent Li sites. In the first Li site, Li(1) is bonded in a 4-coordinate geometry to two equivalent O(3) and two equivalent O(5) atoms. In the second Li site, Li(2) is bonded in a 4-coordinate geometry to two equivalent O(4) and two equivalent O(6) atoms. In the third Li site, Li(3) is bonded in a 4-coordinate geometry to two equivalent O(1) and two equivalent O(6) atoms. There are three inequivalent Al sites. In the first Al site, Al(1) is bonded to two equivalent O(3) and two equivalent O(5) atoms to form AlO4 tetrahedra that share corners with two equivalent Si(1)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. In the second Al site, Al(2) is bonded to two equivalent O(4) and two equivalent O(6) atoms to form AlO4 tetrahedra that share corners with two equivalent Al(3)O4 tetrahedra and corners with two equivalent Si(3)O4 tetrahedra. In the third Al site, Al(3) is bonded to two equivalent O(1) and two equivalent O(6) atoms to form AlO4 tetrahedra that share corners with two equivalent Al(2)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to two equivalent O(2) and two equivalent O(5) atoms to form SiO4 tetrahedra that share corners with two equivalent Al(1)O4 tetrahedra and corners with two equivalent Si(3)O4 tetrahedra. In the second Si site, Si(2) is bonded to two equivalent O(1) and two equivalent O(3) atoms to form SiO4 tetrahedra that share corners with two equivalent Al(1)O4 tetrahedra and corners with two equivalent Al(3)O4 tetrahedra. In the third Si site, Si(3) is bonded to two equivalent O(2) and two equivalent O(4) atoms to form SiO4 tetrahedra that share corners with two equivalent Al(2)O4 tetrahedra and corners with two equivalent Si(1)O4 tetrahedra. There are six inequivalent O sites. In the first O site, O(1) is bonded in a distorted T-shaped geometry to one Li(3), one Al(3), and one Si(2) atom. In the second O site, O(2) is bonded in a linear geometry to one Si(1) and one Si(3) atom. In the third O site, O(3) is bonded in a distorted T-shaped geometry to one Li(1), one Al(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted T-shaped geometry to one Li(2), one Al(2), and one Si(3) atom. In the fifth O site, O(5) is bonded in a distorted T-shaped geometry to one Li(1), one Al(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a distorted rectangular see-saw-like geometry to one Li(2), one Li(3), one Al(2), and one Al(3) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_LiAlSiO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.309
_cell_length_b   5.290
_cell_length_c   11.322
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   60.005
_symmetry_Int_Tables_number   1
_cell_volume   275.408
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.000  0.000  0.336  1.0
  Li  Li1  1  0.000  0.000  0.804  1.0
  Li  Li2  1  0.000  0.000  0.028  1.0
  Al  Al3  1  0.500  0.000  0.337  1.0
  Al  Al4  1  0.500  0.000  0.832  1.0
  Al  Al5  1  0.000  0.500  0.997  1.0
  Si  Si6  1  0.000  0.500  0.500  1.0
  Si  Si7  1  0.500  0.500  0.170  1.0
  Si  Si8  1  0.500  0.500  0.663  1.0
  O  O9  1  0.218  0.585  0.087  1.0
  O  O10  1  0.223  0.553  0.581  1.0
  O  O11  1  0.604  0.211  0.254  1.0
  O  O12  1  0.601  0.212  0.744  1.0
  O  O13  1  0.177  0.208  0.418  1.0
  O  O14  1  0.176  0.176  0.915  1.0
  O  O15  1  0.782  0.415  0.087  1.0
  O  O16  1  0.777  0.447  0.581  1.0
  O  O17  1  0.396  0.789  0.254  1.0
  O  O18  1  0.399  0.788  0.744  1.0
  O  O19  1  0.823  0.792  0.418  1.0
  O  O20  1  0.824  0.824  0.915  1.0
[/CIF]
.
The compound described by LiAlSiO4 crystallizes in the monoclinic P2 space group. There are three inequivalent Li sites. In the first Li site, Li(1) is bonded in a 4-coordinate geometry to two equivalent O(3) and two equivalent O(5) atoms. In the second Li site, Li(2) is bonded in a 4-coordinate geometry to two equivalent O(4) and two equivalent O(6) atoms. In the third Li site, Li(3) is bonded in a 4-coordinate geometry to two equivalent O(1) and two equivalent O(6) atoms. There are three inequivalent Al sites. In the first Al site, Al(1) is bonded to two equivalent O(3) and two equivalent O(5) atoms to form AlO4 tetrahedra that share corners with two equivalent Si(1)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. In the second Al site, Al(2) is bonded to two equivalent O(4) and two equivalent O(6) atoms to form AlO4 tetrahedra that share corners with two equivalent Al(3)O4 tetrahedra and corners with two equivalent Si(3)O4 tetrahedra. In the third Al site, Al(3) is bonded to two equivalent O(1) and two equivalent O(6) atoms to form AlO4 tetrahedra that share corners with two equivalent Al(2)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to two equivalent O(2) and two equivalent O(5) atoms to form SiO4 tetrahedra that share corners with two equivalent Al(1)O4 tetrahedra and corners with two equivalent Si(3)O4 tetrahedra. In the second Si site, Si(2) is bonded to two equivalent O(1) and two equivalent O(3) atoms to form SiO4 tetrahedra that share corners with two equivalent Al(1)O4 tetrahedra and corners with two equivalent Al(3)O4 tetrahedra. In the third Si site, Si(3) is bonded to two equivalent O(2) and two equivalent O(4) atoms to form SiO4 tetrahedra that share corners with two equivalent Al(2)O4 tetrahedra and corners with two equivalent Si(1)O4 tetrahedra. There are six inequivalent O sites. In the first O site, O(1) is bonded in a distorted T-shaped geometry to one Li(3), one Al(3), and one Si(2) atom. In the second O site, O(2) is bonded in a linear geometry to one Si(1) and one Si(3) atom. In the third O site, O(3) is bonded in a distorted T-shaped geometry to one Li(1), one Al(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted T-shaped geometry to one Li(2), one Al(2), and one Si(3) atom. In the fifth O site, O(5) is bonded in a distorted T-shaped geometry to one Li(1), one Al(1), and one Si(1) atom. In the sixth O site, O(6) is bonded in a distorted rectangular see-saw-like geometry to one Li(2), one Li(3), one Al(2), and one Al(3) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_LiAlSiO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.309
_cell_length_b   5.290
_cell_length_c   11.322
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   60.005
_symmetry_Int_Tables_number   1
_cell_volume   275.408
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.000  0.000  0.336  1.0
  Li  Li1  1  0.000  0.000  0.804  1.0
  Li  Li2  1  0.000  0.000  0.028  1.0
  Al  Al3  1  0.500  0.000  0.337  1.0
  Al  Al4  1  0.500  0.000  0.832  1.0
  Al  Al5  1  0.000  0.500  0.997  1.0
  Si  Si6  1  0.000  0.500  0.500  1.0
  Si  Si7  1  0.500  0.500  0.170  1.0
  Si  Si8  1  0.500  0.500  0.663  1.0
  O  O9  1  0.218  0.585  0.087  1.0
  O  O10  1  0.223  0.553  0.581  1.0
  O  O11  1  0.604  0.211  0.254  1.0
  O  O12  1  0.601  0.212  0.744  1.0
  O  O13  1  0.177  0.208  0.418  1.0
  O  O14  1  0.176  0.176  0.915  1.0
  O  O15  1  0.782  0.415  0.087  1.0
  O  O16  1  0.777  0.447  0.581  1.0
  O  O17  1  0.396  0.789  0.254  1.0
  O  O18  1  0.399  0.788  0.744  1.0
  O  O19  1  0.823  0.792  0.418  1.0
  O  O20  1  0.824  0.824  0.915  1.0
[/CIF]
.