The compound described by Ga11NO15 is beta indium sulfide-derived structured and crystallizes in the triclinic P1 space group. There are eleven inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), one O(3), one O(7), and one O(8) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(5)O6 octahedra,  a cornercorner with one Ga(7)O6 octahedra, corners with two equivalent Ga(10)NO5 octahedra, corners with two equivalent Ga(4)NO5 octahedra, corners with two equivalent Ga(6)NO5 octahedra, and corners with two equivalent Ga(8)O6 octahedra. The corner-sharing octahedral tilt angles range from 53-61°. In the second Ga site, Ga(2) is bonded to one O(1), one O(11), one O(14), one O(15), one O(2), and one O(6) atom to form GaO6 octahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(9)O4 tetrahedra, corners with two equivalent Ga(11)NO3 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra,  an edgeedge with one Ga(10)NO5 octahedra,  an edgeedge with one Ga(4)NO5 octahedra,  an edgeedge with one Ga(7)O6 octahedra, and edges with two equivalent Ga(5)O6 octahedra. In the third Ga site, Ga(3) is bonded to one O(14), one O(2), one O(5), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(10)NO5 octahedra,  a cornercorner with one Ga(4)NO5 octahedra,  a cornercorner with one Ga(6)NO5 octahedra,  a cornercorner with one Ga(8)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, and corners with two equivalent Ga(7)O6 octahedra. The corner-sharing octahedral tilt angles range from 54-62°. In the fourth Ga site, Ga(4) is bonded to one N(1), one O(1), one O(10), one O(13), one O(2), and one O(3) atom to form GaNO5 octahedra that share  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one Ga(9)O4 tetrahedra, corners with two equivalent Ga(11)NO3 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra,  an edgeedge with one Ga(6)NO5 octahedra,  an edgeedge with one Ga(2)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra,  an edgeedge with one Ga(8)O6 octahedra, and edges with two equivalent Ga(10)NO5 octahedra. In the fifth Ga site, Ga(5) is bonded to one O(14), one O(15), one O(2), one O(3), one O(4), and one O(6) atom to form GaO6 octahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(9)O4 tetrahedra, corners with two equivalent Ga(11)NO3 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra,  an edgeedge with one Ga(10)NO5 octahedra,  an edgeedge with one Ga(4)NO5 octahedra,  an edgeedge with one Ga(7)O6 octahedra, and edges with two equivalent Ga(2)O6 octahedra. In the sixth Ga site, Ga(6) is bonded to one N(1), one O(12), one O(13), one O(5), one O(7), and one O(8) atom to form GaNO5 octahedra that share  a cornercorner with one Ga(11)NO3 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(9)O4 tetrahedra,  an edgeedge with one Ga(10)NO5 octahedra,  an edgeedge with one Ga(4)NO5 octahedra,  an edgeedge with one Ga(7)O6 octahedra, and edges with two equivalent Ga(8)O6 octahedra. In the seventh Ga site, Ga(7) is bonded to one O(11), one O(15), one O(4), one O(5), one O(7), and one O(9) atom to form GaO6 octahedra that share  a cornercorner with one Ga(11)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra, corners with two equivalent Ga(9)O4 tetrahedra,  an edgeedge with one Ga(6)NO5 octahedra,  an edgeedge with one Ga(2)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra, and  an edgeedge with one Ga(8)O6 octahedra. In the eighth Ga site, Ga(8) is bonded to one O(10), one O(12), one O(13), one O(7), one O(8), and one O(9) atom to form GaO6 octahedra that share  a cornercorner with one Ga(11)NO3 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(9)O4 tetrahedra,  an edgeedge with one Ga(10)NO5 octahedra,  an edgeedge with one Ga(4)NO5 octahedra,  an edgeedge with one Ga(7)O6 octahedra, and edges with two equivalent Ga(6)NO5 octahedra. In the ninth Ga site, Ga(9) is bonded to one O(11), one O(12), one O(13), and one O(4) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(10)NO5 octahedra,  a cornercorner with one Ga(4)NO5 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(5)O6 octahedra, corners with two equivalent Ga(6)NO5 octahedra, corners with two equivalent Ga(7)O6 octahedra, and corners with two equivalent Ga(8)O6 octahedra. The corner-sharing octahedral tilt angles range from 52-61°. In the tenth Ga site, Ga(10) is bonded to one N(1), one O(1), one O(10), one O(12), one O(14), and one O(3) atom to form GaNO5 octahedra that share  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one Ga(9)O4 tetrahedra, corners with two equivalent Ga(11)NO3 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra,  an edgeedge with one Ga(6)NO5 octahedra,  an edgeedge with one Ga(2)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra,  an edgeedge with one Ga(8)O6 octahedra, and edges with two equivalent Ga(4)NO5 octahedra. In the eleventh Ga site, Ga(11) is bonded to one N(1), one O(10), one O(15), and one O(6) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(6)NO5 octahedra,  a cornercorner with one Ga(7)O6 octahedra,  a cornercorner with one Ga(8)O6 octahedra, corners with two equivalent Ga(10)NO5 octahedra, corners with two equivalent Ga(4)NO5 octahedra, corners with two equivalent Ga(2)O6 octahedra, and corners with two equivalent Ga(5)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-61°. N(1) is bonded to one Ga(10), one Ga(11), one Ga(4), and one Ga(6) atom to form distorted NGa4 trigonal pyramids that share  a cornercorner with one O(2)Ga4 trigonal pyramid and corners with two equivalent O(1)Ga4 trigonal pyramids. There are fifteen inequivalent O sites. In the first O site, O(1) is bonded to one Ga(1), one Ga(10), one Ga(2), and one Ga(4) atom to form distorted OGa4 trigonal pyramids that share corners with two equivalent N(1)Ga4 trigonal pyramids and  an edgeedge with one O(2)Ga4 trigonal pyramid. In the second O site, O(2) is bonded to one Ga(2), one Ga(3), one Ga(4), and one Ga(5) atom to form distorted OGa4 trigonal pyramids that share  a cornercorner with one N(1)Ga4 trigonal pyramid and  an edgeedge with one O(1)Ga4 trigonal pyramid. In the third O site, O(3) is bonded in a rectangular see-saw-like geometry to one Ga(1), one Ga(10), one Ga(4), and one Ga(5) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Ga(5), one Ga(7), and one Ga(9) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Ga(3), one Ga(6), and one Ga(7) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Ga(11), one Ga(2), and one Ga(5) atom. In the seventh O site, O(7) is bonded in a rectangular see-saw-like geometry to one Ga(1), one Ga(6), one Ga(7), and one Ga(8) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ga(1), one Ga(6), and one Ga(8) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one Ga(3), one Ga(7), and one Ga(8) atom. In the tenth O site, O(10) is bonded in a rectangular see-saw-like geometry to one Ga(10), one Ga(11), one Ga(4), and one Ga(8) atom. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one Ga(2), one Ga(7), and one Ga(9) atom. In the twelfth O site, O(12) is bonded in a rectangular see-saw-like geometry to one Ga(10), one Ga(6), one Ga(8), and one Ga(9) atom. In the thirteenth O site, O(13) is bonded in a distorted rectangular see-saw-like geometry to one Ga(4), one Ga(6), one Ga(8), and one Ga(9) atom. In the fourteenth O site, O(14) is bonded in a distorted rectangular see-saw-like geometry to one Ga(10), one Ga(2), one Ga(3), and one Ga(5) atom. In the fifteenth O site, O(15) is bonded in a rectangular see-saw-like geometry to one Ga(11), one Ga(2), one Ga(5), and one Ga(7) atom. is represented by the CIF file [CIF]
data_Ga11NO15
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.871
_cell_length_b   5.961
_cell_length_c   8.303
_cell_angle_alpha   89.857
_cell_angle_beta   88.407
_cell_angle_gamma   89.775
_symmetry_Int_Tables_number   1
_cell_volume   290.464
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.995  0.256  0.129  1.0
  Ga  Ga1  1  0.982  0.495  0.513  1.0
  Ga  Ga2  1  0.481  0.752  0.636  1.0
  Ga  Ga3  1  0.744  0.757  0.251  1.0
  Ga  Ga4  1  0.982  0.007  0.515  1.0
  Ga  Ga5  1  0.518  0.008  0.996  1.0
  Ga  Ga6  1  0.251  0.249  0.750  1.0
  Ga  Ga7  1  0.518  0.497  0.986  1.0
  Ga  Ga8  1  0.018  0.746  0.866  1.0
  Ga  Ga9  1  0.256  0.758  0.250  1.0
  Ga  Ga10  1  0.505  0.237  0.365  1.0
  N  N11  1  0.500  0.976  0.235  1.0
  O  O12  1  0.999  0.526  0.260  1.0
  O  O13  1  0.757  0.751  0.500  1.0
  O  O14  1  1.000  0.986  0.259  1.0
  O  O15  1  0.018  0.006  0.742  1.0
  O  O16  1  0.482  0.006  0.765  1.0
  O  O17  1  0.770  0.252  0.486  1.0
  O  O18  1  0.263  0.254  0.994  1.0
  O  O19  1  0.736  0.256  0.008  1.0
  O  O20  1  0.483  0.492  0.758  1.0
  O  O21  1  0.500  0.512  0.241  1.0
  O  O22  1  0.018  0.491  0.740  1.0
  O  O23  1  0.267  0.740  0.009  1.0
  O  O24  1  0.747  0.744  1.000  1.0
  O  O25  1  0.226  0.749  0.492  1.0
  O  O26  1  0.234  0.250  0.505  1.0
[/CIF]
.
The compound described by Ga11NO15 is beta indium sulfide-derived structured and crystallizes in the triclinic P1 space group. There are eleven inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), one O(3), one O(7), and one O(8) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(5)O6 octahedra,  a cornercorner with one Ga(7)O6 octahedra, corners with two equivalent Ga(10)NO5 octahedra, corners with two equivalent Ga(4)NO5 octahedra, corners with two equivalent Ga(6)NO5 octahedra, and corners with two equivalent Ga(8)O6 octahedra. The corner-sharing octahedral tilt angles range from 53-61°. In the second Ga site, Ga(2) is bonded to one O(1), one O(11), one O(14), one O(15), one O(2), and one O(6) atom to form GaO6 octahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(9)O4 tetrahedra, corners with two equivalent Ga(11)NO3 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra,  an edgeedge with one Ga(10)NO5 octahedra,  an edgeedge with one Ga(4)NO5 octahedra,  an edgeedge with one Ga(7)O6 octahedra, and edges with two equivalent Ga(5)O6 octahedra. In the third Ga site, Ga(3) is bonded to one O(14), one O(2), one O(5), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(10)NO5 octahedra,  a cornercorner with one Ga(4)NO5 octahedra,  a cornercorner with one Ga(6)NO5 octahedra,  a cornercorner with one Ga(8)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, and corners with two equivalent Ga(7)O6 octahedra. The corner-sharing octahedral tilt angles range from 54-62°. In the fourth Ga site, Ga(4) is bonded to one N(1), one O(1), one O(10), one O(13), one O(2), and one O(3) atom to form GaNO5 octahedra that share  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one Ga(9)O4 tetrahedra, corners with two equivalent Ga(11)NO3 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra,  an edgeedge with one Ga(6)NO5 octahedra,  an edgeedge with one Ga(2)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra,  an edgeedge with one Ga(8)O6 octahedra, and edges with two equivalent Ga(10)NO5 octahedra. In the fifth Ga site, Ga(5) is bonded to one O(14), one O(15), one O(2), one O(3), one O(4), and one O(6) atom to form GaO6 octahedra that share  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(9)O4 tetrahedra, corners with two equivalent Ga(11)NO3 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra,  an edgeedge with one Ga(10)NO5 octahedra,  an edgeedge with one Ga(4)NO5 octahedra,  an edgeedge with one Ga(7)O6 octahedra, and edges with two equivalent Ga(2)O6 octahedra. In the sixth Ga site, Ga(6) is bonded to one N(1), one O(12), one O(13), one O(5), one O(7), and one O(8) atom to form GaNO5 octahedra that share  a cornercorner with one Ga(11)NO3 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(9)O4 tetrahedra,  an edgeedge with one Ga(10)NO5 octahedra,  an edgeedge with one Ga(4)NO5 octahedra,  an edgeedge with one Ga(7)O6 octahedra, and edges with two equivalent Ga(8)O6 octahedra. In the seventh Ga site, Ga(7) is bonded to one O(11), one O(15), one O(4), one O(5), one O(7), and one O(9) atom to form GaO6 octahedra that share  a cornercorner with one Ga(11)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra, corners with two equivalent Ga(9)O4 tetrahedra,  an edgeedge with one Ga(6)NO5 octahedra,  an edgeedge with one Ga(2)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra, and  an edgeedge with one Ga(8)O6 octahedra. In the eighth Ga site, Ga(8) is bonded to one O(10), one O(12), one O(13), one O(7), one O(8), and one O(9) atom to form GaO6 octahedra that share  a cornercorner with one Ga(11)NO3 tetrahedra,  a cornercorner with one Ga(3)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(9)O4 tetrahedra,  an edgeedge with one Ga(10)NO5 octahedra,  an edgeedge with one Ga(4)NO5 octahedra,  an edgeedge with one Ga(7)O6 octahedra, and edges with two equivalent Ga(6)NO5 octahedra. In the ninth Ga site, Ga(9) is bonded to one O(11), one O(12), one O(13), and one O(4) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(10)NO5 octahedra,  a cornercorner with one Ga(4)NO5 octahedra,  a cornercorner with one Ga(2)O6 octahedra,  a cornercorner with one Ga(5)O6 octahedra, corners with two equivalent Ga(6)NO5 octahedra, corners with two equivalent Ga(7)O6 octahedra, and corners with two equivalent Ga(8)O6 octahedra. The corner-sharing octahedral tilt angles range from 52-61°. In the tenth Ga site, Ga(10) is bonded to one N(1), one O(1), one O(10), one O(12), one O(14), and one O(3) atom to form GaNO5 octahedra that share  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one Ga(9)O4 tetrahedra, corners with two equivalent Ga(11)NO3 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra,  an edgeedge with one Ga(6)NO5 octahedra,  an edgeedge with one Ga(2)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra,  an edgeedge with one Ga(8)O6 octahedra, and edges with two equivalent Ga(4)NO5 octahedra. In the eleventh Ga site, Ga(11) is bonded to one N(1), one O(10), one O(15), and one O(6) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(6)NO5 octahedra,  a cornercorner with one Ga(7)O6 octahedra,  a cornercorner with one Ga(8)O6 octahedra, corners with two equivalent Ga(10)NO5 octahedra, corners with two equivalent Ga(4)NO5 octahedra, corners with two equivalent Ga(2)O6 octahedra, and corners with two equivalent Ga(5)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-61°. N(1) is bonded to one Ga(10), one Ga(11), one Ga(4), and one Ga(6) atom to form distorted NGa4 trigonal pyramids that share  a cornercorner with one O(2)Ga4 trigonal pyramid and corners with two equivalent O(1)Ga4 trigonal pyramids. There are fifteen inequivalent O sites. In the first O site, O(1) is bonded to one Ga(1), one Ga(10), one Ga(2), and one Ga(4) atom to form distorted OGa4 trigonal pyramids that share corners with two equivalent N(1)Ga4 trigonal pyramids and  an edgeedge with one O(2)Ga4 trigonal pyramid. In the second O site, O(2) is bonded to one Ga(2), one Ga(3), one Ga(4), and one Ga(5) atom to form distorted OGa4 trigonal pyramids that share  a cornercorner with one N(1)Ga4 trigonal pyramid and  an edgeedge with one O(1)Ga4 trigonal pyramid. In the third O site, O(3) is bonded in a rectangular see-saw-like geometry to one Ga(1), one Ga(10), one Ga(4), and one Ga(5) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Ga(5), one Ga(7), and one Ga(9) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Ga(3), one Ga(6), and one Ga(7) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Ga(11), one Ga(2), and one Ga(5) atom. In the seventh O site, O(7) is bonded in a rectangular see-saw-like geometry to one Ga(1), one Ga(6), one Ga(7), and one Ga(8) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ga(1), one Ga(6), and one Ga(8) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one Ga(3), one Ga(7), and one Ga(8) atom. In the tenth O site, O(10) is bonded in a rectangular see-saw-like geometry to one Ga(10), one Ga(11), one Ga(4), and one Ga(8) atom. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one Ga(2), one Ga(7), and one Ga(9) atom. In the twelfth O site, O(12) is bonded in a rectangular see-saw-like geometry to one Ga(10), one Ga(6), one Ga(8), and one Ga(9) atom. In the thirteenth O site, O(13) is bonded in a distorted rectangular see-saw-like geometry to one Ga(4), one Ga(6), one Ga(8), and one Ga(9) atom. In the fourteenth O site, O(14) is bonded in a distorted rectangular see-saw-like geometry to one Ga(10), one Ga(2), one Ga(3), and one Ga(5) atom. In the fifteenth O site, O(15) is bonded in a rectangular see-saw-like geometry to one Ga(11), one Ga(2), one Ga(5), and one Ga(7) atom. is represented by the CIF file [CIF]
data_Ga11NO15
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.871
_cell_length_b   5.961
_cell_length_c   8.303
_cell_angle_alpha   89.857
_cell_angle_beta   88.407
_cell_angle_gamma   89.775
_symmetry_Int_Tables_number   1
_cell_volume   290.464
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.995  0.256  0.129  1.0
  Ga  Ga1  1  0.982  0.495  0.513  1.0
  Ga  Ga2  1  0.481  0.752  0.636  1.0
  Ga  Ga3  1  0.744  0.757  0.251  1.0
  Ga  Ga4  1  0.982  0.007  0.515  1.0
  Ga  Ga5  1  0.518  0.008  0.996  1.0
  Ga  Ga6  1  0.251  0.249  0.750  1.0
  Ga  Ga7  1  0.518  0.497  0.986  1.0
  Ga  Ga8  1  0.018  0.746  0.866  1.0
  Ga  Ga9  1  0.256  0.758  0.250  1.0
  Ga  Ga10  1  0.505  0.237  0.365  1.0
  N  N11  1  0.500  0.976  0.235  1.0
  O  O12  1  0.999  0.526  0.260  1.0
  O  O13  1  0.757  0.751  0.500  1.0
  O  O14  1  1.000  0.986  0.259  1.0
  O  O15  1  0.018  0.006  0.742  1.0
  O  O16  1  0.482  0.006  0.765  1.0
  O  O17  1  0.770  0.252  0.486  1.0
  O  O18  1  0.263  0.254  0.994  1.0
  O  O19  1  0.736  0.256  0.008  1.0
  O  O20  1  0.483  0.492  0.758  1.0
  O  O21  1  0.500  0.512  0.241  1.0
  O  O22  1  0.018  0.491  0.740  1.0
  O  O23  1  0.267  0.740  0.009  1.0
  O  O24  1  0.747  0.744  1.000  1.0
  O  O25  1  0.226  0.749  0.492  1.0
  O  O26  1  0.234  0.250  0.505  1.0
[/CIF]
.