The compound described by OsSi4P4 crystallizes in the triclinic P1 space group. Os(1) is bonded to one Si(1), one Si(3), one Si(4), one P(1), one P(2), and one P(3) atom to form OsSi3P3 octahedra that share corners with two equivalent Si(1)P3Os tetrahedra, corners with two equivalent Si(3)P3Os tetrahedra, corners with two equivalent Si(4)P3Os tetrahedra, corners with two equivalent P(2)Si3Os tetrahedra, corners with two equivalent P(3)Si3Os tetrahedra, corners with three equivalent Si(2)P4 tetrahedra, corners with three equivalent P(4)Si4 tetrahedra, and corners with two equivalent P(1)Si3Os trigonal pyramids. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one Os(1), one P(1), one P(2), and one P(4) atom to form SiP3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one P(2)Si3Os tetrahedra,  a cornercorner with one P(3)Si3Os tetrahedra, corners with three equivalent Si(3)P3Os tetrahedra, corners with three equivalent Si(4)P3Os tetrahedra, corners with three equivalent Si(2)P4 tetrahedra, and  a cornercorner with one P(1)Si3Os trigonal pyramid. The corner-sharing octahedral tilt angles range from 62-72°. In the second Si site, Si(2) is bonded to one P(1), one P(2), one P(3), and one P(4) atom to form SiP4 tetrahedra that share corners with three equivalent Os(1)Si3P3 octahedra, corners with three equivalent Si(1)P3Os tetrahedra, corners with three equivalent Si(3)P3Os tetrahedra, and corners with three equivalent Si(4)P3Os tetrahedra. The corner-sharing octahedral tilt angles range from 54-75°. In the third Si site, Si(3) is bonded to one Os(1), one P(2), one P(3), and one P(4) atom to form SiP3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one P(2)Si3Os tetrahedra,  a cornercorner with one P(3)Si3Os tetrahedra, corners with three equivalent Si(1)P3Os tetrahedra, corners with three equivalent Si(4)P3Os tetrahedra, corners with three equivalent Si(2)P4 tetrahedra, and  a cornercorner with one P(1)Si3Os trigonal pyramid. The corner-sharing octahedral tilt angles range from 56-63°. In the fourth Si site, Si(4) is bonded to one Os(1), one P(1), one P(3), and one P(4) atom to form SiP3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one P(2)Si3Os tetrahedra,  a cornercorner with one P(3)Si3Os tetrahedra, corners with three equivalent Si(1)P3Os tetrahedra, corners with three equivalent Si(3)P3Os tetrahedra, corners with three equivalent Si(2)P4 tetrahedra, and  a cornercorner with one P(1)Si3Os trigonal pyramid. The corner-sharing octahedral tilt angles range from 50-69°. There are four inequivalent P sites. In the first P site, P(1) is bonded to one Os(1), one Si(1), one Si(2), and one Si(4) atom to form distorted PSi3Os trigonal pyramids that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one Si(1)P3Os tetrahedra,  a cornercorner with one Si(3)P3Os tetrahedra,  a cornercorner with one Si(4)P3Os tetrahedra, corners with three equivalent P(2)Si3Os tetrahedra, corners with three equivalent P(3)Si3Os tetrahedra, and corners with three equivalent P(4)Si4 tetrahedra. The corner-sharing octahedral tilt angles range from 62-69°. In the second P site, P(2) is bonded to one Os(1), one Si(1), one Si(2), and one Si(3) atom to form distorted PSi3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one Si(1)P3Os tetrahedra,  a cornercorner with one Si(3)P3Os tetrahedra,  a cornercorner with one Si(4)P3Os tetrahedra, corners with three equivalent P(3)Si3Os tetrahedra, corners with three equivalent P(4)Si4 tetrahedra, and corners with three equivalent P(1)Si3Os trigonal pyramids. The corner-sharing octahedral tilt angles range from 47-68°. In the third P site, P(3) is bonded to one Os(1), one Si(2), one Si(3), and one Si(4) atom to form distorted PSi3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one Si(1)P3Os tetrahedra,  a cornercorner with one Si(3)P3Os tetrahedra,  a cornercorner with one Si(4)P3Os tetrahedra, corners with three equivalent P(2)Si3Os tetrahedra, corners with three equivalent P(4)Si4 tetrahedra, and corners with three equivalent P(1)Si3Os trigonal pyramids. The corner-sharing octahedral tilt angles range from 52-63°. In the fourth P site, P(4) is bonded to one Si(1), one Si(2), one Si(3), and one Si(4) atom to form PSi4 tetrahedra that share corners with three equivalent Os(1)Si3P3 octahedra, corners with three equivalent P(2)Si3Os tetrahedra, corners with three equivalent P(3)Si3Os tetrahedra, and corners with three equivalent P(1)Si3Os trigonal pyramids. The corner-sharing octahedral tilt angles range from 52-73°. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si4P4Os
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.960
_cell_length_b   5.632
_cell_length_c   6.186
_cell_angle_alpha   85.643
_cell_angle_beta   68.345
_cell_angle_gamma   70.860
_symmetry_Int_Tables_number   1
_cell_volume   151.514
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.996  1.000  0.991  1.0
  Si  Si1  1  0.389  0.371  0.736  1.0
  Si  Si2  1  0.515  0.620  0.184  1.0
  Si  Si3  1  0.822  0.802  0.532  1.0
  P  P4  1  0.313  0.042  0.623  1.0
  P  P5  1  0.494  0.253  0.061  1.0
  P  P6  1  0.773  0.437  0.427  1.0
  P  P7  1  0.920  0.667  0.867  1.0
  Os  Os8  1  0.152  0.025  0.303  1.0
[/CIF]
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The compound described by OsSi4P4 crystallizes in the triclinic P1 space group. Os(1) is bonded to one Si(1), one Si(3), one Si(4), one P(1), one P(2), and one P(3) atom to form OsSi3P3 octahedra that share corners with two equivalent Si(1)P3Os tetrahedra, corners with two equivalent Si(3)P3Os tetrahedra, corners with two equivalent Si(4)P3Os tetrahedra, corners with two equivalent P(2)Si3Os tetrahedra, corners with two equivalent P(3)Si3Os tetrahedra, corners with three equivalent Si(2)P4 tetrahedra, corners with three equivalent P(4)Si4 tetrahedra, and corners with two equivalent P(1)Si3Os trigonal pyramids. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one Os(1), one P(1), one P(2), and one P(4) atom to form SiP3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one P(2)Si3Os tetrahedra,  a cornercorner with one P(3)Si3Os tetrahedra, corners with three equivalent Si(3)P3Os tetrahedra, corners with three equivalent Si(4)P3Os tetrahedra, corners with three equivalent Si(2)P4 tetrahedra, and  a cornercorner with one P(1)Si3Os trigonal pyramid. The corner-sharing octahedral tilt angles range from 62-72°. In the second Si site, Si(2) is bonded to one P(1), one P(2), one P(3), and one P(4) atom to form SiP4 tetrahedra that share corners with three equivalent Os(1)Si3P3 octahedra, corners with three equivalent Si(1)P3Os tetrahedra, corners with three equivalent Si(3)P3Os tetrahedra, and corners with three equivalent Si(4)P3Os tetrahedra. The corner-sharing octahedral tilt angles range from 54-75°. In the third Si site, Si(3) is bonded to one Os(1), one P(2), one P(3), and one P(4) atom to form SiP3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one P(2)Si3Os tetrahedra,  a cornercorner with one P(3)Si3Os tetrahedra, corners with three equivalent Si(1)P3Os tetrahedra, corners with three equivalent Si(4)P3Os tetrahedra, corners with three equivalent Si(2)P4 tetrahedra, and  a cornercorner with one P(1)Si3Os trigonal pyramid. The corner-sharing octahedral tilt angles range from 56-63°. In the fourth Si site, Si(4) is bonded to one Os(1), one P(1), one P(3), and one P(4) atom to form SiP3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one P(2)Si3Os tetrahedra,  a cornercorner with one P(3)Si3Os tetrahedra, corners with three equivalent Si(1)P3Os tetrahedra, corners with three equivalent Si(3)P3Os tetrahedra, corners with three equivalent Si(2)P4 tetrahedra, and  a cornercorner with one P(1)Si3Os trigonal pyramid. The corner-sharing octahedral tilt angles range from 50-69°. There are four inequivalent P sites. In the first P site, P(1) is bonded to one Os(1), one Si(1), one Si(2), and one Si(4) atom to form distorted PSi3Os trigonal pyramids that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one Si(1)P3Os tetrahedra,  a cornercorner with one Si(3)P3Os tetrahedra,  a cornercorner with one Si(4)P3Os tetrahedra, corners with three equivalent P(2)Si3Os tetrahedra, corners with three equivalent P(3)Si3Os tetrahedra, and corners with three equivalent P(4)Si4 tetrahedra. The corner-sharing octahedral tilt angles range from 62-69°. In the second P site, P(2) is bonded to one Os(1), one Si(1), one Si(2), and one Si(3) atom to form distorted PSi3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one Si(1)P3Os tetrahedra,  a cornercorner with one Si(3)P3Os tetrahedra,  a cornercorner with one Si(4)P3Os tetrahedra, corners with three equivalent P(3)Si3Os tetrahedra, corners with three equivalent P(4)Si4 tetrahedra, and corners with three equivalent P(1)Si3Os trigonal pyramids. The corner-sharing octahedral tilt angles range from 47-68°. In the third P site, P(3) is bonded to one Os(1), one Si(2), one Si(3), and one Si(4) atom to form distorted PSi3Os tetrahedra that share corners with two equivalent Os(1)Si3P3 octahedra,  a cornercorner with one Si(1)P3Os tetrahedra,  a cornercorner with one Si(3)P3Os tetrahedra,  a cornercorner with one Si(4)P3Os tetrahedra, corners with three equivalent P(2)Si3Os tetrahedra, corners with three equivalent P(4)Si4 tetrahedra, and corners with three equivalent P(1)Si3Os trigonal pyramids. The corner-sharing octahedral tilt angles range from 52-63°. In the fourth P site, P(4) is bonded to one Si(1), one Si(2), one Si(3), and one Si(4) atom to form PSi4 tetrahedra that share corners with three equivalent Os(1)Si3P3 octahedra, corners with three equivalent P(2)Si3Os tetrahedra, corners with three equivalent P(3)Si3Os tetrahedra, and corners with three equivalent P(1)Si3Os trigonal pyramids. The corner-sharing octahedral tilt angles range from 52-73°. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si4P4Os
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.960
_cell_length_b   5.632
_cell_length_c   6.186
_cell_angle_alpha   85.643
_cell_angle_beta   68.345
_cell_angle_gamma   70.860
_symmetry_Int_Tables_number   1
_cell_volume   151.514
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.996  1.000  0.991  1.0
  Si  Si1  1  0.389  0.371  0.736  1.0
  Si  Si2  1  0.515  0.620  0.184  1.0
  Si  Si3  1  0.822  0.802  0.532  1.0
  P  P4  1  0.313  0.042  0.623  1.0
  P  P5  1  0.494  0.253  0.061  1.0
  P  P6  1  0.773  0.437  0.427  1.0
  P  P7  1  0.920  0.667  0.867  1.0
  Os  Os8  1  0.152  0.025  0.303  1.0
[/CIF]
.