The material described by (SiH3)3P is High Pressure (4-7GPa) Tellurium structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four trisilylphosphane molecules. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one P(1), one H(1), one H(2), and one H(3) atom to form corner-sharing SiPH3 tetrahedra. In the second Si site, Si(2) is bonded to one P(1), one H(4), one H(8), and one H(9) atom to form corner-sharing SiPH3 tetrahedra. In the third Si site, Si(3) is bonded to one P(1), one H(5), one H(6), and one H(7) atom to form corner-sharing SiPH3 tetrahedra. P(1) is bonded in a distorted T-shaped geometry to one Si(1), one Si(2), and one Si(3) atom. There are nine inequivalent H sites. In the first H site, H(5) is bonded in a single-bond geometry to one Si(3) atom. In the second H site, H(6) is bonded in a single-bond geometry to one Si(3) atom. In the third H site, H(7) is bonded in a single-bond geometry to one Si(3) atom. In the fourth H site, H(8) is bonded in a single-bond geometry to one Si(2) atom. In the fifth H site, H(1) is bonded in a single-bond geometry to one Si(1) atom. In the sixth H site, H(9) is bonded in a single-bond geometry to one Si(2) atom. In the seventh H site, H(2) is bonded in a single-bond geometry to one Si(1) atom. In the eighth H site, H(3) is bonded in a single-bond geometry to one Si(1) atom. In the ninth H site, H(4) is bonded in a single-bond geometry to one Si(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si3PH9
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   12.890
_cell_length_b   6.099
_cell_length_c   9.811
_cell_angle_alpha   85.699
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   769.141
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.885  0.898  0.336  1.0
  Si  Si1  1  0.385  0.102  0.164  1.0
  Si  Si2  1  0.115  0.102  0.664  1.0
  Si  Si3  1  0.615  0.898  0.836  1.0
  Si  Si4  1  0.783  0.289  0.122  1.0
  Si  Si5  1  0.283  0.711  0.378  1.0
  Si  Si6  1  0.217  0.711  0.878  1.0
  Si  Si7  1  0.717  0.289  0.622  1.0
  Si  Si8  1  0.038  0.298  0.201  1.0
  Si  Si9  1  0.538  0.702  0.299  1.0
  Si  Si10  1  0.962  0.702  0.799  1.0
  Si  Si11  1  0.462  0.298  0.701  1.0
  P  P12  1  0.885  0.268  0.308  1.0
  P  P13  1  0.385  0.732  0.192  1.0
  P  P14  1  0.115  0.732  0.692  1.0
  P  P15  1  0.615  0.268  0.808  1.0
  H  H16  1  0.974  0.824  0.422  1.0
  H  H17  1  0.474  0.176  0.078  1.0
  H  H18  1  0.026  0.176  0.578  1.0
  H  H19  1  0.526  0.824  0.922  1.0
  H  H20  1  0.787  0.827  0.404  1.0
  H  H21  1  0.287  0.173  0.096  1.0
  H  H22  1  0.213  0.173  0.596  1.0
  H  H23  1  0.713  0.827  0.904  1.0
  H  H24  1  0.892  0.800  0.202  1.0
  H  H25  1  0.392  0.200  0.298  1.0
  H  H26  1  0.108  0.200  0.798  1.0
  H  H27  1  0.608  0.800  0.702  1.0
  H  H28  1  0.679  0.206  0.165  1.0
  H  H29  1  0.179  0.794  0.335  1.0
  H  H30  1  0.321  0.794  0.835  1.0
  H  H31  1  0.821  0.206  0.665  1.0
  H  H32  1  0.452  0.143  0.592  1.0
  H  H33  1  0.952  0.857  0.908  1.0
  H  H34  1  0.548  0.857  0.408  1.0
  H  H35  1  0.048  0.143  0.092  1.0
  H  H36  1  0.378  0.251  0.803  1.0
  H  H37  1  0.878  0.749  0.697  1.0
  H  H38  1  0.622  0.749  0.197  1.0
  H  H39  1  0.122  0.251  0.303  1.0
  H  H40  1  0.449  0.526  0.640  1.0
  H  H41  1  0.949  0.474  0.860  1.0
  H  H42  1  0.551  0.474  0.360  1.0
  H  H43  1  0.051  0.526  0.140  1.0
  H  H44  1  0.676  0.156  0.513  1.0
  H  H45  1  0.176  0.844  0.987  1.0
  H  H46  1  0.324  0.844  0.487  1.0
  H  H47  1  0.824  0.156  0.013  1.0
  H  H48  1  0.725  0.523  0.569  1.0
  H  H49  1  0.225  0.477  0.931  1.0
  H  H50  1  0.275  0.477  0.431  1.0
  H  H51  1  0.775  0.523  0.069  1.0
[/CIF]
.
The material described by (SiH3)3P is High Pressure (4-7GPa) Tellurium structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four trisilylphosphane molecules. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one P(1), one H(1), one H(2), and one H(3) atom to form corner-sharing SiPH3 tetrahedra. In the second Si site, Si(2) is bonded to one P(1), one H(4), one H(8), and one H(9) atom to form corner-sharing SiPH3 tetrahedra. In the third Si site, Si(3) is bonded to one P(1), one H(5), one H(6), and one H(7) atom to form corner-sharing SiPH3 tetrahedra. P(1) is bonded in a distorted T-shaped geometry to one Si(1), one Si(2), and one Si(3) atom. There are nine inequivalent H sites. In the first H site, H(5) is bonded in a single-bond geometry to one Si(3) atom. In the second H site, H(6) is bonded in a single-bond geometry to one Si(3) atom. In the third H site, H(7) is bonded in a single-bond geometry to one Si(3) atom. In the fourth H site, H(8) is bonded in a single-bond geometry to one Si(2) atom. In the fifth H site, H(1) is bonded in a single-bond geometry to one Si(1) atom. In the sixth H site, H(9) is bonded in a single-bond geometry to one Si(2) atom. In the seventh H site, H(2) is bonded in a single-bond geometry to one Si(1) atom. In the eighth H site, H(3) is bonded in a single-bond geometry to one Si(1) atom. In the ninth H site, H(4) is bonded in a single-bond geometry to one Si(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si3PH9
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   12.890
_cell_length_b   6.099
_cell_length_c   9.811
_cell_angle_alpha   85.699
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   769.141
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.885  0.898  0.336  1.0
  Si  Si1  1  0.385  0.102  0.164  1.0
  Si  Si2  1  0.115  0.102  0.664  1.0
  Si  Si3  1  0.615  0.898  0.836  1.0
  Si  Si4  1  0.783  0.289  0.122  1.0
  Si  Si5  1  0.283  0.711  0.378  1.0
  Si  Si6  1  0.217  0.711  0.878  1.0
  Si  Si7  1  0.717  0.289  0.622  1.0
  Si  Si8  1  0.038  0.298  0.201  1.0
  Si  Si9  1  0.538  0.702  0.299  1.0
  Si  Si10  1  0.962  0.702  0.799  1.0
  Si  Si11  1  0.462  0.298  0.701  1.0
  P  P12  1  0.885  0.268  0.308  1.0
  P  P13  1  0.385  0.732  0.192  1.0
  P  P14  1  0.115  0.732  0.692  1.0
  P  P15  1  0.615  0.268  0.808  1.0
  H  H16  1  0.974  0.824  0.422  1.0
  H  H17  1  0.474  0.176  0.078  1.0
  H  H18  1  0.026  0.176  0.578  1.0
  H  H19  1  0.526  0.824  0.922  1.0
  H  H20  1  0.787  0.827  0.404  1.0
  H  H21  1  0.287  0.173  0.096  1.0
  H  H22  1  0.213  0.173  0.596  1.0
  H  H23  1  0.713  0.827  0.904  1.0
  H  H24  1  0.892  0.800  0.202  1.0
  H  H25  1  0.392  0.200  0.298  1.0
  H  H26  1  0.108  0.200  0.798  1.0
  H  H27  1  0.608  0.800  0.702  1.0
  H  H28  1  0.679  0.206  0.165  1.0
  H  H29  1  0.179  0.794  0.335  1.0
  H  H30  1  0.321  0.794  0.835  1.0
  H  H31  1  0.821  0.206  0.665  1.0
  H  H32  1  0.452  0.143  0.592  1.0
  H  H33  1  0.952  0.857  0.908  1.0
  H  H34  1  0.548  0.857  0.408  1.0
  H  H35  1  0.048  0.143  0.092  1.0
  H  H36  1  0.378  0.251  0.803  1.0
  H  H37  1  0.878  0.749  0.697  1.0
  H  H38  1  0.622  0.749  0.197  1.0
  H  H39  1  0.122  0.251  0.303  1.0
  H  H40  1  0.449  0.526  0.640  1.0
  H  H41  1  0.949  0.474  0.860  1.0
  H  H42  1  0.551  0.474  0.360  1.0
  H  H43  1  0.051  0.526  0.140  1.0
  H  H44  1  0.676  0.156  0.513  1.0
  H  H45  1  0.176  0.844  0.987  1.0
  H  H46  1  0.324  0.844  0.487  1.0
  H  H47  1  0.824  0.156  0.013  1.0
  H  H48  1  0.725  0.523  0.569  1.0
  H  H49  1  0.225  0.477  0.931  1.0
  H  H50  1  0.275  0.477  0.431  1.0
  H  H51  1  0.775  0.523  0.069  1.0
[/CIF]
.