The compound described by Si is Theoretical Carbon Structure-like structured and crystallizes in the monoclinic C2/m space group. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one Si(1), one Si(3), and two equivalent Si(2) atoms to form corner-sharing SiSi4 tetrahedra. In the second Si site, Si(2) is bonded to one Si(2), one Si(4), and two equivalent Si(1) atoms to form corner-sharing SiSi4 tetrahedra. In the third Si site, Si(3) is bonded to one Si(1), one Si(4), and two equivalent Si(3) atoms to form corner-sharing SiSi4 tetrahedra. In the fourth Si site, Si(4) is bonded to one Si(2), one Si(3), and two equivalent Si(4) atoms to form corner-sharing SiSi4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.846
_cell_length_b   6.333
_cell_length_c   7.177
_cell_angle_alpha   96.524
_cell_angle_beta   105.542
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   167.231
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.056  0.874  0.111  1.0
  Si  Si1  1  0.944  0.126  0.889  1.0
  Si  Si2  1  0.559  0.653  0.118  1.0
  Si  Si3  1  0.441  0.347  0.882  1.0
  Si  Si4  1  0.213  0.057  0.425  1.0
  Si  Si5  1  0.787  0.943  0.575  1.0
  Si  Si6  1  0.727  0.586  0.454  1.0
  Si  Si7  1  0.273  0.414  0.546  1.0
[/CIF]
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The compound described by Si is Theoretical Carbon Structure-like structured and crystallizes in the monoclinic C2/m space group. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one Si(1), one Si(3), and two equivalent Si(2) atoms to form corner-sharing SiSi4 tetrahedra. In the second Si site, Si(2) is bonded to one Si(2), one Si(4), and two equivalent Si(1) atoms to form corner-sharing SiSi4 tetrahedra. In the third Si site, Si(3) is bonded to one Si(1), one Si(4), and two equivalent Si(3) atoms to form corner-sharing SiSi4 tetrahedra. In the fourth Si site, Si(4) is bonded to one Si(2), one Si(3), and two equivalent Si(4) atoms to form corner-sharing SiSi4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.846
_cell_length_b   6.333
_cell_length_c   7.177
_cell_angle_alpha   96.524
_cell_angle_beta   105.542
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   167.231
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.056  0.874  0.111  1.0
  Si  Si1  1  0.944  0.126  0.889  1.0
  Si  Si2  1  0.559  0.653  0.118  1.0
  Si  Si3  1  0.441  0.347  0.882  1.0
  Si  Si4  1  0.213  0.057  0.425  1.0
  Si  Si5  1  0.787  0.943  0.575  1.0
  Si  Si6  1  0.727  0.586  0.454  1.0
  Si  Si7  1  0.273  0.414  0.546  1.0
[/CIF]
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