The material structure described by SiO2 crystallizes in the triclinic P1 space group. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(2), one O(5), one O(6), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(2), one O(3), one O(4), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(3), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(1), one O(4), one O(7), and one O(8) atom to form corner-sharing SiO4 tetrahedra. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Si(3) and one Si(4) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(4) atom. In the fifth O site, O(5) is bonded in a linear geometry to one Si(1) and one Si(3) atom. In the sixth O site, O(6) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(3) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(4) atom. In the eighth O site, O(8) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(4) atom. is represented by the CIF card [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.915
_cell_length_b   7.603
_cell_length_c   7.102
_cell_angle_alpha   122.781
_cell_angle_beta   77.744
_cell_angle_gamma   113.900
_symmetry_Int_Tables_number   1
_cell_volume   204.010
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.884  0.430  0.924  1.0
  Si  Si1  1  0.078  0.946  0.200  1.0
  Si  Si2  1  0.268  0.173  0.916  1.0
  Si  Si3  1  0.578  0.101  0.503  1.0
  O  O4  1  0.358  0.008  0.662  1.0
  O  O5  1  0.073  0.693  0.057  1.0
  O  O6  1  0.084  0.033  0.036  1.0
  O  O7  1  0.376  0.103  0.353  1.0
  O  O8  1  0.073  0.290  0.900  1.0
  O  O9  1  0.575  0.367  0.051  1.0
  O  O10  1  0.778  0.949  0.347  1.0
  O  O11  1  0.797  0.352  0.674  1.0
[/CIF]
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The material structure described by SiO2 crystallizes in the triclinic P1 space group. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(2), one O(5), one O(6), and one O(8) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(2), one O(3), one O(4), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(1), one O(3), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded to one O(1), one O(4), one O(7), and one O(8) atom to form corner-sharing SiO4 tetrahedra. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Si(3) and one Si(4) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(3) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(4) atom. In the fifth O site, O(5) is bonded in a linear geometry to one Si(1) and one Si(3) atom. In the sixth O site, O(6) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(3) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one Si(2) and one Si(4) atom. In the eighth O site, O(8) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(4) atom. is represented by the CIF card [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.915
_cell_length_b   7.603
_cell_length_c   7.102
_cell_angle_alpha   122.781
_cell_angle_beta   77.744
_cell_angle_gamma   113.900
_symmetry_Int_Tables_number   1
_cell_volume   204.010
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.884  0.430  0.924  1.0
  Si  Si1  1  0.078  0.946  0.200  1.0
  Si  Si2  1  0.268  0.173  0.916  1.0
  Si  Si3  1  0.578  0.101  0.503  1.0
  O  O4  1  0.358  0.008  0.662  1.0
  O  O5  1  0.073  0.693  0.057  1.0
  O  O6  1  0.084  0.033  0.036  1.0
  O  O7  1  0.376  0.103  0.353  1.0
  O  O8  1  0.073  0.290  0.900  1.0
  O  O9  1  0.575  0.367  0.051  1.0
  O  O10  1  0.778  0.949  0.347  1.0
  O  O11  1  0.797  0.352  0.674  1.0
[/CIF]
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