The material described by MgTi(GaO2)4 crystallizes in the monoclinic Cm space group. Mg(1) is bonded in a 5-coordinate geometry to one O(1), one O(2), one O(4), and two equivalent O(3) atoms. Ti(1) is bonded to one O(4), one O(8), two equivalent O(2), and two equivalent O(3) atoms to form TiO6 octahedra that share corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(4)O4 trigonal pyramids, and edges with two equivalent Ti(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 53-55°. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(2), one O(7), and two equivalent O(5) atoms to form GaO4 tetrahedra that share corners with two equivalent Ti(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with three equivalent Ga(3)O6 octahedra, and corners with two equivalent Ga(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 56-68°. In the second Ga site, Ga(2) is bonded to one O(1), one O(6), two equivalent O(7), and two equivalent O(8) atoms to form GaO6 octahedra that share corners with two equivalent Ti(1)O6 octahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with three equivalent Ga(4)O4 trigonal pyramids, edges with two equivalent Ga(2)O6 octahedra, and edges with two equivalent Ga(3)O6 octahedra. The corner-sharing octahedral tilt angles are 53°. In the third Ga site, Ga(3) is bonded to one O(5), one O(7), two equivalent O(4), and two equivalent O(6) atoms to form GaO6 octahedra that share corners with two equivalent Ti(1)O6 octahedra, corners with three equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(4)O4 trigonal pyramids, edges with two equivalent Ga(2)O6 octahedra, and edges with two equivalent Ga(3)O6 octahedra. The corner-sharing octahedral tilt angles are 55°. In the fourth Ga site, Ga(4) is bonded to one O(3), one O(6), and two equivalent O(1) atoms to form GaO4 trigonal pyramids that share corners with two equivalent Ti(1)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with three equivalent Ga(2)O6 octahedra, and corners with two equivalent Ga(4)O4 trigonal pyramids. The corner-sharing octahedral tilt angles range from 55-72°. There are eight inequivalent O sites. In the first O site, O(1) is bonded to one Mg(1), one Ga(2), and two equivalent Ga(4) atoms to form distorted OMgGa3 trigonal pyramids that share  a cornercorner with one O(2)MgTi2Ga tetrahedra,  a cornercorner with one O(4)MgTiGa2 tetrahedra, corners with two equivalent O(7)Ga4 tetrahedra, corners with three equivalent O(6)Ga4 tetrahedra, corners with two equivalent O(1)MgGa3 trigonal pyramids, and edges with two equivalent O(3)Mg2Ti2Ga trigonal bipyramids. In the second O site, O(2) is bonded to one Mg(1), two equivalent Ti(1), and one Ga(1) atom to form OMgTi2Ga tetrahedra that share  a cornercorner with one O(7)Ga4 tetrahedra, corners with two equivalent O(2)MgTi2Ga tetrahedra, corners with three equivalent O(4)MgTiGa2 tetrahedra, corners with four equivalent O(3)Mg2Ti2Ga trigonal bipyramids,  a cornercorner with one O(1)MgGa3 trigonal pyramid, and  an edgeedge with one O(3)Mg2Ti2Ga trigonal bipyramid. In the third O site, O(3) is bonded to two equivalent Mg(1), two equivalent Ti(1), and one Ga(4) atom to form distorted OMg2Ti2Ga trigonal bipyramids that share  a cornercorner with one O(6)Ga4 tetrahedra, corners with four equivalent O(2)MgTi2Ga tetrahedra,  an edgeedge with one O(2)MgTi2Ga tetrahedra, edges with two equivalent O(4)MgTiGa2 tetrahedra, edges with two equivalent O(3)Mg2Ti2Ga trigonal bipyramids, and edges with two equivalent O(1)MgGa3 trigonal pyramids. In the fourth O site, O(4) is bonded to one Mg(1), one Ti(1), and two equivalent Ga(3) atoms to form distorted OMgTiGa2 tetrahedra that share corners with two equivalent O(6)Ga4 tetrahedra, corners with two equivalent O(7)Ga4 tetrahedra, corners with two equivalent O(4)MgTiGa2 tetrahedra, corners with three equivalent O(2)MgTi2Ga tetrahedra,  a cornercorner with one O(1)MgGa3 trigonal pyramid,  an edgeedge with one O(6)Ga4 tetrahedra, and edges with two equivalent O(3)Mg2Ti2Ga trigonal bipyramids. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Ga(3) and two equivalent Ga(1) atoms. In the sixth O site, O(6) is bonded to one Ga(2), one Ga(4), and two equivalent Ga(3) atoms to form OGa4 tetrahedra that share corners with two equivalent O(6)Ga4 tetrahedra, corners with two equivalent O(4)MgTiGa2 tetrahedra,  a cornercorner with one O(3)Mg2Ti2Ga trigonal bipyramid, corners with three equivalent O(1)MgGa3 trigonal pyramids,  an edgeedge with one O(4)MgTiGa2 tetrahedra, and edges with two equivalent O(7)Ga4 tetrahedra. In the seventh O site, O(7) is bonded to one Ga(1), one Ga(3), and two equivalent Ga(2) atoms to form distorted OGa4 tetrahedra that share  a cornercorner with one O(2)MgTi2Ga tetrahedra, corners with two equivalent O(7)Ga4 tetrahedra, corners with two equivalent O(4)MgTiGa2 tetrahedra, corners with two equivalent O(1)MgGa3 trigonal pyramids, and edges with two equivalent O(6)Ga4 tetrahedra. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ti(1) and two equivalent Ga(2) atoms. is represented by the CIF card [CIF]
data_MgTi(GaO2)4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.111
_cell_length_b   6.399
_cell_length_c   8.370
_cell_angle_alpha   80.913
_cell_angle_beta   79.288
_cell_angle_gamma   75.929
_symmetry_Int_Tables_number   1
_cell_volume   157.668
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Mg  Mg0  1  0.784  0.430  0.003  1.0
  Ti  Ti1  1  0.015  0.969  0.001  1.0
  Ga  Ga2  1  0.525  0.644  0.305  1.0
  Ga  Ga3  1  0.752  0.856  0.639  1.0
  Ga  Ga4  1  0.244  0.155  0.356  1.0
  Ga  Ga5  1  0.474  0.356  0.698  1.0
  O  O6  1  0.874  0.532  0.721  1.0
  O  O7  1  0.592  0.742  0.075  1.0
  O  O8  1  0.415  0.242  0.929  1.0
  O  O9  1  0.830  0.135  0.205  1.0
  O  O10  1  0.108  0.475  0.309  1.0
  O  O11  1  0.648  0.174  0.530  1.0
  O  O12  1  0.350  0.839  0.461  1.0
  O  O13  1  0.158  0.909  0.774  1.0
[/CIF]
.
The material described by MgTi(GaO2)4 crystallizes in the monoclinic Cm space group. Mg(1) is bonded in a 5-coordinate geometry to one O(1), one O(2), one O(4), and two equivalent O(3) atoms. Ti(1) is bonded to one O(4), one O(8), two equivalent O(2), and two equivalent O(3) atoms to form TiO6 octahedra that share corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(4)O4 trigonal pyramids, and edges with two equivalent Ti(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 53-55°. There are four inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(2), one O(7), and two equivalent O(5) atoms to form GaO4 tetrahedra that share corners with two equivalent Ti(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with three equivalent Ga(3)O6 octahedra, and corners with two equivalent Ga(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 56-68°. In the second Ga site, Ga(2) is bonded to one O(1), one O(6), two equivalent O(7), and two equivalent O(8) atoms to form GaO6 octahedra that share corners with two equivalent Ti(1)O6 octahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with three equivalent Ga(4)O4 trigonal pyramids, edges with two equivalent Ga(2)O6 octahedra, and edges with two equivalent Ga(3)O6 octahedra. The corner-sharing octahedral tilt angles are 53°. In the third Ga site, Ga(3) is bonded to one O(5), one O(7), two equivalent O(4), and two equivalent O(6) atoms to form GaO6 octahedra that share corners with two equivalent Ti(1)O6 octahedra, corners with three equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(4)O4 trigonal pyramids, edges with two equivalent Ga(2)O6 octahedra, and edges with two equivalent Ga(3)O6 octahedra. The corner-sharing octahedral tilt angles are 55°. In the fourth Ga site, Ga(4) is bonded to one O(3), one O(6), and two equivalent O(1) atoms to form GaO4 trigonal pyramids that share corners with two equivalent Ti(1)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with three equivalent Ga(2)O6 octahedra, and corners with two equivalent Ga(4)O4 trigonal pyramids. The corner-sharing octahedral tilt angles range from 55-72°. There are eight inequivalent O sites. In the first O site, O(1) is bonded to one Mg(1), one Ga(2), and two equivalent Ga(4) atoms to form distorted OMgGa3 trigonal pyramids that share  a cornercorner with one O(2)MgTi2Ga tetrahedra,  a cornercorner with one O(4)MgTiGa2 tetrahedra, corners with two equivalent O(7)Ga4 tetrahedra, corners with three equivalent O(6)Ga4 tetrahedra, corners with two equivalent O(1)MgGa3 trigonal pyramids, and edges with two equivalent O(3)Mg2Ti2Ga trigonal bipyramids. In the second O site, O(2) is bonded to one Mg(1), two equivalent Ti(1), and one Ga(1) atom to form OMgTi2Ga tetrahedra that share  a cornercorner with one O(7)Ga4 tetrahedra, corners with two equivalent O(2)MgTi2Ga tetrahedra, corners with three equivalent O(4)MgTiGa2 tetrahedra, corners with four equivalent O(3)Mg2Ti2Ga trigonal bipyramids,  a cornercorner with one O(1)MgGa3 trigonal pyramid, and  an edgeedge with one O(3)Mg2Ti2Ga trigonal bipyramid. In the third O site, O(3) is bonded to two equivalent Mg(1), two equivalent Ti(1), and one Ga(4) atom to form distorted OMg2Ti2Ga trigonal bipyramids that share  a cornercorner with one O(6)Ga4 tetrahedra, corners with four equivalent O(2)MgTi2Ga tetrahedra,  an edgeedge with one O(2)MgTi2Ga tetrahedra, edges with two equivalent O(4)MgTiGa2 tetrahedra, edges with two equivalent O(3)Mg2Ti2Ga trigonal bipyramids, and edges with two equivalent O(1)MgGa3 trigonal pyramids. In the fourth O site, O(4) is bonded to one Mg(1), one Ti(1), and two equivalent Ga(3) atoms to form distorted OMgTiGa2 tetrahedra that share corners with two equivalent O(6)Ga4 tetrahedra, corners with two equivalent O(7)Ga4 tetrahedra, corners with two equivalent O(4)MgTiGa2 tetrahedra, corners with three equivalent O(2)MgTi2Ga tetrahedra,  a cornercorner with one O(1)MgGa3 trigonal pyramid,  an edgeedge with one O(6)Ga4 tetrahedra, and edges with two equivalent O(3)Mg2Ti2Ga trigonal bipyramids. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Ga(3) and two equivalent Ga(1) atoms. In the sixth O site, O(6) is bonded to one Ga(2), one Ga(4), and two equivalent Ga(3) atoms to form OGa4 tetrahedra that share corners with two equivalent O(6)Ga4 tetrahedra, corners with two equivalent O(4)MgTiGa2 tetrahedra,  a cornercorner with one O(3)Mg2Ti2Ga trigonal bipyramid, corners with three equivalent O(1)MgGa3 trigonal pyramids,  an edgeedge with one O(4)MgTiGa2 tetrahedra, and edges with two equivalent O(7)Ga4 tetrahedra. In the seventh O site, O(7) is bonded to one Ga(1), one Ga(3), and two equivalent Ga(2) atoms to form distorted OGa4 tetrahedra that share  a cornercorner with one O(2)MgTi2Ga tetrahedra, corners with two equivalent O(7)Ga4 tetrahedra, corners with two equivalent O(4)MgTiGa2 tetrahedra, corners with two equivalent O(1)MgGa3 trigonal pyramids, and edges with two equivalent O(6)Ga4 tetrahedra. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ti(1) and two equivalent Ga(2) atoms. is represented by the CIF card [CIF]
data_MgTi(GaO2)4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.111
_cell_length_b   6.399
_cell_length_c   8.370
_cell_angle_alpha   80.913
_cell_angle_beta   79.288
_cell_angle_gamma   75.929
_symmetry_Int_Tables_number   1
_cell_volume   157.668
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Mg  Mg0  1  0.784  0.430  0.003  1.0
  Ti  Ti1  1  0.015  0.969  0.001  1.0
  Ga  Ga2  1  0.525  0.644  0.305  1.0
  Ga  Ga3  1  0.752  0.856  0.639  1.0
  Ga  Ga4  1  0.244  0.155  0.356  1.0
  Ga  Ga5  1  0.474  0.356  0.698  1.0
  O  O6  1  0.874  0.532  0.721  1.0
  O  O7  1  0.592  0.742  0.075  1.0
  O  O8  1  0.415  0.242  0.929  1.0
  O  O9  1  0.830  0.135  0.205  1.0
  O  O10  1  0.108  0.475  0.309  1.0
  O  O11  1  0.648  0.174  0.530  1.0
  O  O12  1  0.350  0.839  0.461  1.0
  O  O13  1  0.158  0.909  0.774  1.0
[/CIF]
.