The material described by Ga(NO3)4NO2 is Indium-derived structured and crystallizes in the monoclinic C2 space group. The structure is zero-dimensional and consists of two hydroxylamine, n-hydroxy- molecules and two Ga(NO3)4 clusters. In each Ga(NO3)4 cluster, Ga(1) is bonded in a 6-coordinate geometry to two equivalent O(1), two equivalent O(4), and two equivalent O(5) atoms. There are two inequivalent N sites. In the first N site, N(1) is bonded in a trigonal planar geometry to one O(1), one O(2), and one O(3) atom. In the second N site, N(2) is bonded in a trigonal planar geometry to one O(4), one O(5), and one O(6) atom. There are six inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Ga(1) and one N(1) atom. In the second O site, O(2) is bonded in a single-bond geometry to one N(1) atom. In the third O site, O(3) is bonded in a single-bond geometry to one N(1) atom. In the fourth O site, O(4) is bonded in an L-shaped geometry to one Ga(1) and one N(2) atom. In the fifth O site, O(5) is bonded in an L-shaped geometry to one Ga(1) and one N(2) atom. In the sixth O site, O(6) is bonded in a single-bond geometry to one N(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaN5O14
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.178
_cell_length_b   7.178
_cell_length_c   8.876
_cell_angle_alpha   51.898
_cell_angle_beta   51.898
_cell_angle_gamma   48.009
_symmetry_Int_Tables_number   1
_cell_volume   250.628
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.016  0.984  0.000  1.0
  N  N1  1  0.869  0.466  0.681  1.0
  N  N2  1  0.534  0.131  0.319  1.0
  N  N3  1  0.156  0.580  0.972  1.0
  N  N4  1  0.420  0.844  0.028  1.0
  N  N5  1  0.140  0.860  0.500  1.0
  O  O6  1  0.986  0.332  0.814  1.0
  O  O7  1  0.668  0.014  0.186  1.0
  O  O8  1  0.739  0.387  0.708  1.0
  O  O9  1  0.613  0.261  0.292  1.0
  O  O10  1  0.901  0.662  0.540  1.0
  O  O11  1  0.338  0.099  0.460  1.0
  O  O12  1  0.079  0.827  0.841  1.0
  O  O13  1  0.173  0.921  0.159  1.0
  O  O14  1  0.150  0.560  0.127  1.0
  O  O15  1  0.440  0.850  0.873  1.0
  O  O16  1  0.223  0.398  0.941  1.0
  O  O17  1  0.602  0.777  0.059  1.0
  O  O18  1  0.334  0.666  0.500  1.0
  O  O19  1  0.947  0.053  0.500  1.0
[/CIF]
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The material described by Ga(NO3)4NO2 is Indium-derived structured and crystallizes in the monoclinic C2 space group. The structure is zero-dimensional and consists of two hydroxylamine, n-hydroxy- molecules and two Ga(NO3)4 clusters. In each Ga(NO3)4 cluster, Ga(1) is bonded in a 6-coordinate geometry to two equivalent O(1), two equivalent O(4), and two equivalent O(5) atoms. There are two inequivalent N sites. In the first N site, N(1) is bonded in a trigonal planar geometry to one O(1), one O(2), and one O(3) atom. In the second N site, N(2) is bonded in a trigonal planar geometry to one O(4), one O(5), and one O(6) atom. There are six inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Ga(1) and one N(1) atom. In the second O site, O(2) is bonded in a single-bond geometry to one N(1) atom. In the third O site, O(3) is bonded in a single-bond geometry to one N(1) atom. In the fourth O site, O(4) is bonded in an L-shaped geometry to one Ga(1) and one N(2) atom. In the fifth O site, O(5) is bonded in an L-shaped geometry to one Ga(1) and one N(2) atom. In the sixth O site, O(6) is bonded in a single-bond geometry to one N(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaN5O14
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.178
_cell_length_b   7.178
_cell_length_c   8.876
_cell_angle_alpha   51.898
_cell_angle_beta   51.898
_cell_angle_gamma   48.009
_symmetry_Int_Tables_number   1
_cell_volume   250.628
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.016  0.984  0.000  1.0
  N  N1  1  0.869  0.466  0.681  1.0
  N  N2  1  0.534  0.131  0.319  1.0
  N  N3  1  0.156  0.580  0.972  1.0
  N  N4  1  0.420  0.844  0.028  1.0
  N  N5  1  0.140  0.860  0.500  1.0
  O  O6  1  0.986  0.332  0.814  1.0
  O  O7  1  0.668  0.014  0.186  1.0
  O  O8  1  0.739  0.387  0.708  1.0
  O  O9  1  0.613  0.261  0.292  1.0
  O  O10  1  0.901  0.662  0.540  1.0
  O  O11  1  0.338  0.099  0.460  1.0
  O  O12  1  0.079  0.827  0.841  1.0
  O  O13  1  0.173  0.921  0.159  1.0
  O  O14  1  0.150  0.560  0.127  1.0
  O  O15  1  0.440  0.850  0.873  1.0
  O  O16  1  0.223  0.398  0.941  1.0
  O  O17  1  0.602  0.777  0.059  1.0
  O  O18  1  0.334  0.666  0.500  1.0
  O  O19  1  0.947  0.053  0.500  1.0
[/CIF]
.