The material structure described by Cd2Ga2Se5 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one Se(4), one Se(5), and two equivalent Se(1) atoms to form CdSe4 tetrahedra that share  a cornercorner with one Ga(1)Se4 tetrahedra, corners with two equivalent Cd(1)Se4 tetrahedra, corners with three equivalent Cd(2)Se4 tetrahedra, and corners with four equivalent Ga(2)Se4 tetrahedra. In the second Cd site, Cd(2) is bonded to one Se(1), one Se(2), one Se(3), and one Se(4) atom to form CdSe4 tetrahedra that share corners with two equivalent Ga(2)Se4 tetrahedra, corners with three equivalent Cd(1)Se4 tetrahedra, and corners with four equivalent Ga(1)Se4 tetrahedra. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one Se(2), one Se(4), and two equivalent Se(3) atoms to form GaSe4 tetrahedra that share  a cornercorner with one Cd(1)Se4 tetrahedra,  a cornercorner with one Ga(2)Se4 tetrahedra, corners with two equivalent Ga(1)Se4 tetrahedra, and corners with four equivalent Cd(2)Se4 tetrahedra. In the second Ga site, Ga(2) is bonded to one Se(1), one Se(2), and two equivalent Se(5) atoms to form GaSe4 tetrahedra that share  a cornercorner with one Ga(1)Se4 tetrahedra, corners with two equivalent Cd(2)Se4 tetrahedra, corners with two equivalent Ga(2)Se4 tetrahedra, and corners with four equivalent Cd(1)Se4 tetrahedra. There are five inequivalent Se sites. In the first Se site, Se(1) is bonded to one Cd(2), two equivalent Cd(1), and one Ga(2) atom to form corner-sharing SeCd3Ga tetrahedra. In the second Se site, Se(2) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(1), and one Ga(2) atom. In the third Se site, Se(3) is bonded in a trigonal non-coplanar geometry to one Cd(2) and two equivalent Ga(1) atoms. In the fourth Se site, Se(4) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Cd(2), and one Ga(1) atom. In the fifth Se site, Se(5) is bonded in a trigonal non-coplanar geometry to one Cd(1) and two equivalent Ga(2) atoms. is represented by the CIF file [CIF]
data_Cd2Ga2Se5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.741
_cell_length_b   7.224
_cell_length_c   10.850
_cell_angle_alpha   70.815
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   499.000
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cd  Cd0  1  0.512  0.655  0.881  1.0
  Cd  Cd1  1  0.488  0.428  0.318  1.0
  Cd  Cd2  1  0.012  0.345  0.119  1.0
  Cd  Cd3  1  0.988  0.572  0.682  1.0
  Ga  Ga4  1  0.506  0.850  0.495  1.0
  Ga  Ga5  1  0.501  0.021  0.103  1.0
  Ga  Ga6  1  0.001  0.979  0.897  1.0
  Ga  Ga7  1  0.006  0.150  0.505  1.0
  Se  Se8  1  0.109  0.650  0.900  1.0
  Se  Se9  1  0.141  0.216  0.700  1.0
  Se  Se10  1  0.139  0.854  0.474  1.0
  Se  Se11  1  0.094  0.444  0.327  1.0
  Se  Se12  1  0.135  0.001  0.102  1.0
  Se  Se13  1  0.609  0.350  0.100  1.0
  Se  Se14  1  0.635  0.999  0.898  1.0
  Se  Se15  1  0.594  0.556  0.673  1.0
  Se  Se16  1  0.639  0.146  0.526  1.0
  Se  Se17  1  0.641  0.784  0.300  1.0
[/CIF]
.
The material structure described by Cd2Ga2Se5 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Cd sites. In the first Cd site, Cd(1) is bonded to one Se(4), one Se(5), and two equivalent Se(1) atoms to form CdSe4 tetrahedra that share  a cornercorner with one Ga(1)Se4 tetrahedra, corners with two equivalent Cd(1)Se4 tetrahedra, corners with three equivalent Cd(2)Se4 tetrahedra, and corners with four equivalent Ga(2)Se4 tetrahedra. In the second Cd site, Cd(2) is bonded to one Se(1), one Se(2), one Se(3), and one Se(4) atom to form CdSe4 tetrahedra that share corners with two equivalent Ga(2)Se4 tetrahedra, corners with three equivalent Cd(1)Se4 tetrahedra, and corners with four equivalent Ga(1)Se4 tetrahedra. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one Se(2), one Se(4), and two equivalent Se(3) atoms to form GaSe4 tetrahedra that share  a cornercorner with one Cd(1)Se4 tetrahedra,  a cornercorner with one Ga(2)Se4 tetrahedra, corners with two equivalent Ga(1)Se4 tetrahedra, and corners with four equivalent Cd(2)Se4 tetrahedra. In the second Ga site, Ga(2) is bonded to one Se(1), one Se(2), and two equivalent Se(5) atoms to form GaSe4 tetrahedra that share  a cornercorner with one Ga(1)Se4 tetrahedra, corners with two equivalent Cd(2)Se4 tetrahedra, corners with two equivalent Ga(2)Se4 tetrahedra, and corners with four equivalent Cd(1)Se4 tetrahedra. There are five inequivalent Se sites. In the first Se site, Se(1) is bonded to one Cd(2), two equivalent Cd(1), and one Ga(2) atom to form corner-sharing SeCd3Ga tetrahedra. In the second Se site, Se(2) is bonded in a trigonal non-coplanar geometry to one Cd(2), one Ga(1), and one Ga(2) atom. In the third Se site, Se(3) is bonded in a trigonal non-coplanar geometry to one Cd(2) and two equivalent Ga(1) atoms. In the fourth Se site, Se(4) is bonded in a trigonal non-coplanar geometry to one Cd(1), one Cd(2), and one Ga(1) atom. In the fifth Se site, Se(5) is bonded in a trigonal non-coplanar geometry to one Cd(1) and two equivalent Ga(2) atoms. is represented by the CIF file [CIF]
data_Cd2Ga2Se5
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.741
_cell_length_b   7.224
_cell_length_c   10.850
_cell_angle_alpha   70.815
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   499.000
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cd  Cd0  1  0.512  0.655  0.881  1.0
  Cd  Cd1  1  0.488  0.428  0.318  1.0
  Cd  Cd2  1  0.012  0.345  0.119  1.0
  Cd  Cd3  1  0.988  0.572  0.682  1.0
  Ga  Ga4  1  0.506  0.850  0.495  1.0
  Ga  Ga5  1  0.501  0.021  0.103  1.0
  Ga  Ga6  1  0.001  0.979  0.897  1.0
  Ga  Ga7  1  0.006  0.150  0.505  1.0
  Se  Se8  1  0.109  0.650  0.900  1.0
  Se  Se9  1  0.141  0.216  0.700  1.0
  Se  Se10  1  0.139  0.854  0.474  1.0
  Se  Se11  1  0.094  0.444  0.327  1.0
  Se  Se12  1  0.135  0.001  0.102  1.0
  Se  Se13  1  0.609  0.350  0.100  1.0
  Se  Se14  1  0.635  0.999  0.898  1.0
  Se  Se15  1  0.594  0.556  0.673  1.0
  Se  Se16  1  0.639  0.146  0.526  1.0
  Se  Se17  1  0.641  0.784  0.300  1.0
[/CIF]
.