The structure described by SiS4 is Indium-like structured and crystallizes in the monoclinic P2_1/m space group. The structure is zero-dimensional and consists of two tetrathiosilicic acid molecules. Si(1) is bonded in a tetrahedral geometry to one S(2), one S(3), and two equivalent S(1) atoms. There are three inequivalent S sites. In the first S site, S(3) is bonded in a distorted single-bond geometry to one Si(1) atom. In the second S site, S(1) is bonded in a distorted single-bond geometry to one Si(1) atom. In the third S site, S(2) is bonded in a distorted single-bond geometry to one Si(1) atom. is represented by the CIF file [CIF]
data_SiS4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.711
_cell_length_b   6.882
_cell_length_c   7.657
_cell_angle_alpha   86.723
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   247.862
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.250  0.618  0.652  1.0
  Si  Si1  1  0.750  0.382  0.348  1.0
  S  S2  1  0.526  0.747  0.835  1.0
  S  S3  1  0.026  0.253  0.165  1.0
  S  S4  1  0.474  0.253  0.165  1.0
  S  S5  1  0.974  0.747  0.835  1.0
  S  S6  1  0.250  0.740  0.387  1.0
  S  S7  1  0.750  0.260  0.613  1.0
  S  S8  1  0.250  0.303  0.658  1.0
  S  S9  1  0.750  0.697  0.342  1.0
[/CIF]
.
The structure described by SiS4 is Indium-like structured and crystallizes in the monoclinic P2_1/m space group. The structure is zero-dimensional and consists of two tetrathiosilicic acid molecules. Si(1) is bonded in a tetrahedral geometry to one S(2), one S(3), and two equivalent S(1) atoms. There are three inequivalent S sites. In the first S site, S(3) is bonded in a distorted single-bond geometry to one Si(1) atom. In the second S site, S(1) is bonded in a distorted single-bond geometry to one Si(1) atom. In the third S site, S(2) is bonded in a distorted single-bond geometry to one Si(1) atom. is represented by the CIF file [CIF]
data_SiS4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.711
_cell_length_b   6.882
_cell_length_c   7.657
_cell_angle_alpha   86.723
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   247.862
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.250  0.618  0.652  1.0
  Si  Si1  1  0.750  0.382  0.348  1.0
  S  S2  1  0.526  0.747  0.835  1.0
  S  S3  1  0.026  0.253  0.165  1.0
  S  S4  1  0.474  0.253  0.165  1.0
  S  S5  1  0.974  0.747  0.835  1.0
  S  S6  1  0.250  0.740  0.387  1.0
  S  S7  1  0.750  0.260  0.613  1.0
  S  S8  1  0.250  0.303  0.658  1.0
  S  S9  1  0.750  0.697  0.342  1.0
[/CIF]
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