The compound described by Ho10Si17 crystallizes in the orthorhombic Imm2 space group. There are three inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 10-coordinate geometry to one Si(1), one Si(10), one Si(2), one Si(5), two equivalent Si(3), two equivalent Si(4), and two equivalent Si(7) atoms. In the second Ho site, Ho(2) is bonded in a 10-coordinate geometry to one Si(1), one Si(10), one Si(2), one Si(3), one Si(4), one Si(5), one Si(6), one Si(7), one Si(8), and one Si(9) atom. In the third Ho site, Ho(3) is bonded in a 11-coordinate geometry to one Si(6), one Si(8), one Si(9), two equivalent Si(1), two equivalent Si(10), two equivalent Si(2), and two equivalent Si(5) atoms. There are ten inequivalent Si sites. In the first Si site, Si(8) is bonded in a 9-coordinate geometry to two equivalent Ho(3), four equivalent Ho(2), one Si(6), and two equivalent Si(2) atoms. In the second Si site, Si(9) is bonded in a 8-coordinate geometry to two equivalent Ho(3), four equivalent Ho(2), and two equivalent Si(5) atoms. In the third Si site, Si(10) is bonded in a 8-coordinate geometry to two equivalent Ho(1), two equivalent Ho(2), two equivalent Ho(3), one Si(4), and one Si(5) atom. In the fourth Si site, Si(1) is bonded in a 9-coordinate geometry to two equivalent Ho(1), two equivalent Ho(2), two equivalent Ho(3), one Si(2), one Si(3), and one Si(6) atom. In the fifth Si site, Si(2) is bonded in a 8-coordinate geometry to two equivalent Ho(1), two equivalent Ho(2), two equivalent Ho(3), one Si(1), and one Si(8) atom. In the sixth Si site, Si(3) is bonded in a 8-coordinate geometry to two equivalent Ho(2), four equivalent Ho(1), one Si(1), and one Si(4) atom. In the seventh Si site, Si(4) is bonded in a 9-coordinate geometry to two equivalent Ho(2), four equivalent Ho(1), one Si(10), one Si(3), and one Si(7) atom. In the eighth Si site, Si(5) is bonded in a 9-coordinate geometry to two equivalent Ho(1), two equivalent Ho(2), two equivalent Ho(3), one Si(10), one Si(7), and one Si(9) atom. In the ninth Si site, Si(6) is bonded in a 9-coordinate geometry to two equivalent Ho(3), four equivalent Ho(2), one Si(8), and two equivalent Si(1) atoms. In the tenth Si site, Si(7) is bonded in a 8-coordinate geometry to two equivalent Ho(2), four equivalent Ho(1), one Si(4), and one Si(5) atom. is represented by the CIF file [CIF]
data_Ho10Si17
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.662
_cell_length_b   8.204
_cell_length_c   10.939
_cell_angle_alpha   112.023
_cell_angle_beta   107.724
_cell_angle_gamma   90.001
_symmetry_Int_Tables_number   1
_cell_volume   523.471
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.564  0.052  0.600  1.0
  Ho  Ho1  1  0.368  0.352  0.201  1.0
  Ho  Ho2  1  0.168  0.152  0.799  1.0
  Ho  Ho3  1  0.964  0.451  0.400  1.0
  Ho  Ho4  1  0.168  0.648  0.799  1.0
  Ho  Ho5  1  0.964  0.948  0.400  1.0
  Ho  Ho6  1  0.368  0.848  0.201  1.0
  Ho  Ho7  1  0.564  0.549  0.600  1.0
  Ho  Ho8  1  0.762  0.245  1.000  1.0
  Ho  Ho9  1  0.762  0.755  1.000  1.0
  Si  Si10  1  0.505  0.896  0.792  1.0
  Si  Si11  1  0.082  0.119  0.239  1.0
  Si  Si12  1  0.183  0.801  0.602  1.0
  Si  Si13  1  0.898  0.301  0.601  1.0
  Si  Si14  1  0.502  0.400  0.799  1.0
  Si  Si15  1  0.843  0.881  0.761  1.0
  Si  Si16  1  0.713  0.104  0.208  1.0
  Si  Si17  1  0.581  0.199  0.398  1.0
  Si  Si18  1  0.297  0.699  0.399  1.0
  Si  Si19  1  0.433  1.000  1.000  1.0
  Si  Si20  1  0.669  0.714  0.427  1.0
  Si  Si21  1  0.702  0.600  0.201  1.0
  Si  Si22  1  0.083  1.000  1.000  1.0
  Si  Si23  1  0.394  0.500  0.000  1.0
  Si  Si24  1  0.242  0.286  0.573  1.0
  Si  Si25  1  0.038  0.584  0.167  1.0
  Si  Si26  1  0.871  0.417  0.833  1.0
[/CIF]
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The compound described by Ho10Si17 crystallizes in the orthorhombic Imm2 space group. There are three inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 10-coordinate geometry to one Si(1), one Si(10), one Si(2), one Si(5), two equivalent Si(3), two equivalent Si(4), and two equivalent Si(7) atoms. In the second Ho site, Ho(2) is bonded in a 10-coordinate geometry to one Si(1), one Si(10), one Si(2), one Si(3), one Si(4), one Si(5), one Si(6), one Si(7), one Si(8), and one Si(9) atom. In the third Ho site, Ho(3) is bonded in a 11-coordinate geometry to one Si(6), one Si(8), one Si(9), two equivalent Si(1), two equivalent Si(10), two equivalent Si(2), and two equivalent Si(5) atoms. There are ten inequivalent Si sites. In the first Si site, Si(8) is bonded in a 9-coordinate geometry to two equivalent Ho(3), four equivalent Ho(2), one Si(6), and two equivalent Si(2) atoms. In the second Si site, Si(9) is bonded in a 8-coordinate geometry to two equivalent Ho(3), four equivalent Ho(2), and two equivalent Si(5) atoms. In the third Si site, Si(10) is bonded in a 8-coordinate geometry to two equivalent Ho(1), two equivalent Ho(2), two equivalent Ho(3), one Si(4), and one Si(5) atom. In the fourth Si site, Si(1) is bonded in a 9-coordinate geometry to two equivalent Ho(1), two equivalent Ho(2), two equivalent Ho(3), one Si(2), one Si(3), and one Si(6) atom. In the fifth Si site, Si(2) is bonded in a 8-coordinate geometry to two equivalent Ho(1), two equivalent Ho(2), two equivalent Ho(3), one Si(1), and one Si(8) atom. In the sixth Si site, Si(3) is bonded in a 8-coordinate geometry to two equivalent Ho(2), four equivalent Ho(1), one Si(1), and one Si(4) atom. In the seventh Si site, Si(4) is bonded in a 9-coordinate geometry to two equivalent Ho(2), four equivalent Ho(1), one Si(10), one Si(3), and one Si(7) atom. In the eighth Si site, Si(5) is bonded in a 9-coordinate geometry to two equivalent Ho(1), two equivalent Ho(2), two equivalent Ho(3), one Si(10), one Si(7), and one Si(9) atom. In the ninth Si site, Si(6) is bonded in a 9-coordinate geometry to two equivalent Ho(3), four equivalent Ho(2), one Si(8), and two equivalent Si(1) atoms. In the tenth Si site, Si(7) is bonded in a 8-coordinate geometry to two equivalent Ho(2), four equivalent Ho(1), one Si(4), and one Si(5) atom. is represented by the CIF file [CIF]
data_Ho10Si17
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.662
_cell_length_b   8.204
_cell_length_c   10.939
_cell_angle_alpha   112.023
_cell_angle_beta   107.724
_cell_angle_gamma   90.001
_symmetry_Int_Tables_number   1
_cell_volume   523.471
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.564  0.052  0.600  1.0
  Ho  Ho1  1  0.368  0.352  0.201  1.0
  Ho  Ho2  1  0.168  0.152  0.799  1.0
  Ho  Ho3  1  0.964  0.451  0.400  1.0
  Ho  Ho4  1  0.168  0.648  0.799  1.0
  Ho  Ho5  1  0.964  0.948  0.400  1.0
  Ho  Ho6  1  0.368  0.848  0.201  1.0
  Ho  Ho7  1  0.564  0.549  0.600  1.0
  Ho  Ho8  1  0.762  0.245  1.000  1.0
  Ho  Ho9  1  0.762  0.755  1.000  1.0
  Si  Si10  1  0.505  0.896  0.792  1.0
  Si  Si11  1  0.082  0.119  0.239  1.0
  Si  Si12  1  0.183  0.801  0.602  1.0
  Si  Si13  1  0.898  0.301  0.601  1.0
  Si  Si14  1  0.502  0.400  0.799  1.0
  Si  Si15  1  0.843  0.881  0.761  1.0
  Si  Si16  1  0.713  0.104  0.208  1.0
  Si  Si17  1  0.581  0.199  0.398  1.0
  Si  Si18  1  0.297  0.699  0.399  1.0
  Si  Si19  1  0.433  1.000  1.000  1.0
  Si  Si20  1  0.669  0.714  0.427  1.0
  Si  Si21  1  0.702  0.600  0.201  1.0
  Si  Si22  1  0.083  1.000  1.000  1.0
  Si  Si23  1  0.394  0.500  0.000  1.0
  Si  Si24  1  0.242  0.286  0.573  1.0
  Si  Si25  1  0.038  0.584  0.167  1.0
  Si  Si26  1  0.871  0.417  0.833  1.0
[/CIF]
.