The material structure described by MgV2Zn2(SiO5)2 crystallizes in the triclinic P1 space group. Mg(1) is bonded in a 5-coordinate geometry to one O(4), one O(5), one O(6), one O(8), and one O(9) atom. There are two inequivalent V sites. In the first V site, V(1) is bonded to one O(10), one O(2), one O(4), one O(5), one O(7), and one O(9) atom to form VO6 octahedra that share corners with two equivalent V(2)O6 octahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 36-54°. In the second V site, V(2) is bonded to one O(1), one O(10), one O(3), one O(6), one O(8), and one O(9) atom to form distorted VO6 octahedra that share corners with two equivalent V(1)O6 octahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 36-54°. There are two inequivalent Zn sites. In the first Zn site, Zn(1) is bonded in a 4-coordinate geometry to one O(1), one O(10), one O(3), and one O(7) atom. In the second Zn site, Zn(2) is bonded in a 4-coordinate geometry to one O(2), one O(3), one O(5), one O(6), and one O(9) atom. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(7), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent V(1)O6 octahedra and corners with two equivalent V(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 41-58°. In the second Si site, Si(2) is bonded to one O(3), one O(4), one O(5), and one O(6) atom to form SiO4 tetrahedra that share corners with two equivalent V(1)O6 octahedra and corners with two equivalent V(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 16-56°. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a 3-coordinate geometry to one V(2), one Zn(1), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted trigonal planar geometry to one V(1), one Zn(2), and one Si(1) atom. In the third O site, O(3) is bonded in a distorted rectangular see-saw-like geometry to one V(2), one Zn(1), one Zn(2), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted T-shaped geometry to one Mg(1), one V(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a distorted rectangular see-saw-like geometry to one Mg(1), one V(1), one Zn(2), and one Si(2) atom. In the sixth O site, O(6) is bonded in a distorted see-saw-like geometry to one Mg(1), one V(2), one Zn(2), and one Si(2) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to one V(1), one Zn(1), and one Si(1) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Mg(1), one V(2), and one Si(1) atom. In the ninth O site, O(9) is bonded in a distorted trigonal pyramidal geometry to one Mg(1), one V(1), one V(2), and one Zn(2) atom. In the tenth O site, O(10) is bonded in a distorted trigonal non-coplanar geometry to one V(1), one V(2), and one Zn(1) atom. is represented by the CIF file [CIF]
data_MgV2Zn2(SiO5)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.666
_cell_length_b   7.316
_cell_length_c   8.161
_cell_angle_alpha   90.874
_cell_angle_beta   40.910
_cell_angle_gamma   108.603
_symmetry_Int_Tables_number   1
_cell_volume   195.568
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Mg  Mg0  1  0.081  0.800  0.994  1.0
  V  V1  1  0.440  0.493  0.550  1.0
  V  V2  1  0.552  0.019  0.465  1.0
  Zn  Zn3  1  0.384  0.227  0.261  1.0
  Zn  Zn4  1  0.733  0.734  0.707  1.0
  Si  Si5  1  0.564  0.253  0.814  1.0
  Si  Si6  1  0.427  0.755  0.176  1.0
  O  O7  1  0.774  0.146  0.584  1.0
  O  O8  1  0.524  0.442  0.749  1.0
  O  O9  1  0.327  0.917  0.340  1.0
  O  O10  1  0.473  0.597  0.284  1.0
  O  O11  1  0.107  0.665  0.190  1.0
  O  O12  1  0.889  0.872  0.853  1.0
  O  O13  1  0.807  0.334  0.865  1.0
  O  O14  1  0.105  0.061  0.096  1.0
  O  O15  1  0.450  0.751  0.644  1.0
  O  O16  1  0.517  0.263  0.423  1.0
[/CIF]
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The material structure described by MgV2Zn2(SiO5)2 crystallizes in the triclinic P1 space group. Mg(1) is bonded in a 5-coordinate geometry to one O(4), one O(5), one O(6), one O(8), and one O(9) atom. There are two inequivalent V sites. In the first V site, V(1) is bonded to one O(10), one O(2), one O(4), one O(5), one O(7), and one O(9) atom to form VO6 octahedra that share corners with two equivalent V(2)O6 octahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 36-54°. In the second V site, V(2) is bonded to one O(1), one O(10), one O(3), one O(6), one O(8), and one O(9) atom to form distorted VO6 octahedra that share corners with two equivalent V(1)O6 octahedra, corners with two equivalent Si(1)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 36-54°. There are two inequivalent Zn sites. In the first Zn site, Zn(1) is bonded in a 4-coordinate geometry to one O(1), one O(10), one O(3), and one O(7) atom. In the second Zn site, Zn(2) is bonded in a 4-coordinate geometry to one O(2), one O(3), one O(5), one O(6), and one O(9) atom. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(7), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent V(1)O6 octahedra and corners with two equivalent V(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 41-58°. In the second Si site, Si(2) is bonded to one O(3), one O(4), one O(5), and one O(6) atom to form SiO4 tetrahedra that share corners with two equivalent V(1)O6 octahedra and corners with two equivalent V(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 16-56°. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a 3-coordinate geometry to one V(2), one Zn(1), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted trigonal planar geometry to one V(1), one Zn(2), and one Si(1) atom. In the third O site, O(3) is bonded in a distorted rectangular see-saw-like geometry to one V(2), one Zn(1), one Zn(2), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted T-shaped geometry to one Mg(1), one V(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a distorted rectangular see-saw-like geometry to one Mg(1), one V(1), one Zn(2), and one Si(2) atom. In the sixth O site, O(6) is bonded in a distorted see-saw-like geometry to one Mg(1), one V(2), one Zn(2), and one Si(2) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to one V(1), one Zn(1), and one Si(1) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Mg(1), one V(2), and one Si(1) atom. In the ninth O site, O(9) is bonded in a distorted trigonal pyramidal geometry to one Mg(1), one V(1), one V(2), and one Zn(2) atom. In the tenth O site, O(10) is bonded in a distorted trigonal non-coplanar geometry to one V(1), one V(2), and one Zn(1) atom. is represented by the CIF file [CIF]
data_MgV2Zn2(SiO5)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.666
_cell_length_b   7.316
_cell_length_c   8.161
_cell_angle_alpha   90.874
_cell_angle_beta   40.910
_cell_angle_gamma   108.603
_symmetry_Int_Tables_number   1
_cell_volume   195.568
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Mg  Mg0  1  0.081  0.800  0.994  1.0
  V  V1  1  0.440  0.493  0.550  1.0
  V  V2  1  0.552  0.019  0.465  1.0
  Zn  Zn3  1  0.384  0.227  0.261  1.0
  Zn  Zn4  1  0.733  0.734  0.707  1.0
  Si  Si5  1  0.564  0.253  0.814  1.0
  Si  Si6  1  0.427  0.755  0.176  1.0
  O  O7  1  0.774  0.146  0.584  1.0
  O  O8  1  0.524  0.442  0.749  1.0
  O  O9  1  0.327  0.917  0.340  1.0
  O  O10  1  0.473  0.597  0.284  1.0
  O  O11  1  0.107  0.665  0.190  1.0
  O  O12  1  0.889  0.872  0.853  1.0
  O  O13  1  0.807  0.334  0.865  1.0
  O  O14  1  0.105  0.061  0.096  1.0
  O  O15  1  0.450  0.751  0.644  1.0
  O  O16  1  0.517  0.263  0.423  1.0
[/CIF]
.