The compound described by V2SiO4 is Spinel structured and crystallizes in the orthorhombic Imma space group. There are two inequivalent V sites. In the first V site, V(1) is bonded to two equivalent O(2) and four equivalent O(1) atoms to form VO6 octahedra that share corners with six equivalent Si(1)O4 tetrahedra, edges with two equivalent V(1)O6 octahedra, and edges with four equivalent V(2)O6 octahedra. In the second V site, V(2) is bonded to two equivalent O(1) and four equivalent O(2) atoms to form VO6 octahedra that share corners with six equivalent Si(1)O4 tetrahedra, edges with two equivalent V(2)O6 octahedra, and edges with four equivalent V(1)O6 octahedra. Si(1) is bonded to two equivalent O(1) and two equivalent O(2) atoms to form SiO4 tetrahedra that share corners with six equivalent V(1)O6 octahedra and corners with six equivalent V(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 51-52°. There are two inequivalent O sites. In the first O site, O(1) is bonded in a rectangular see-saw-like geometry to one V(2), two equivalent V(1), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted rectangular see-saw-like geometry to one V(1), two equivalent V(2), and one Si(1) atom. is represented by the CIF file [CIF]
data_V2SiO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.907
_cell_length_b   5.906
_cell_length_c   5.861
_cell_angle_alpha   60.176
_cell_angle_beta   60.189
_cell_angle_gamma   60.668
_symmetry_Int_Tables_number   1
_cell_volume   145.729
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.500  0.000  0.500  1.0
  V  V1  1  0.500  0.500  0.000  1.0
  V  V2  1  1.000  0.500  0.500  1.0
  V  V3  1  0.500  0.500  0.500  1.0
  Si  Si4  1  0.125  0.124  0.126  1.0
  Si  Si5  1  0.875  0.876  0.874  1.0
  O  O6  1  0.240  0.240  0.241  1.0
  O  O7  1  0.781  0.240  0.239  1.0
  O  O8  1  0.240  0.781  0.239  1.0
  O  O9  1  0.240  0.240  0.778  1.0
  O  O10  1  0.760  0.219  0.761  1.0
  O  O11  1  0.760  0.760  0.222  1.0
  O  O12  1  0.219  0.760  0.761  1.0
  O  O13  1  0.760  0.760  0.759  1.0
[/CIF]
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The compound described by V2SiO4 is Spinel structured and crystallizes in the orthorhombic Imma space group. There are two inequivalent V sites. In the first V site, V(1) is bonded to two equivalent O(2) and four equivalent O(1) atoms to form VO6 octahedra that share corners with six equivalent Si(1)O4 tetrahedra, edges with two equivalent V(1)O6 octahedra, and edges with four equivalent V(2)O6 octahedra. In the second V site, V(2) is bonded to two equivalent O(1) and four equivalent O(2) atoms to form VO6 octahedra that share corners with six equivalent Si(1)O4 tetrahedra, edges with two equivalent V(2)O6 octahedra, and edges with four equivalent V(1)O6 octahedra. Si(1) is bonded to two equivalent O(1) and two equivalent O(2) atoms to form SiO4 tetrahedra that share corners with six equivalent V(1)O6 octahedra and corners with six equivalent V(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 51-52°. There are two inequivalent O sites. In the first O site, O(1) is bonded in a rectangular see-saw-like geometry to one V(2), two equivalent V(1), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted rectangular see-saw-like geometry to one V(1), two equivalent V(2), and one Si(1) atom. is represented by the CIF file [CIF]
data_V2SiO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.907
_cell_length_b   5.906
_cell_length_c   5.861
_cell_angle_alpha   60.176
_cell_angle_beta   60.189
_cell_angle_gamma   60.668
_symmetry_Int_Tables_number   1
_cell_volume   145.729
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.500  0.000  0.500  1.0
  V  V1  1  0.500  0.500  0.000  1.0
  V  V2  1  1.000  0.500  0.500  1.0
  V  V3  1  0.500  0.500  0.500  1.0
  Si  Si4  1  0.125  0.124  0.126  1.0
  Si  Si5  1  0.875  0.876  0.874  1.0
  O  O6  1  0.240  0.240  0.241  1.0
  O  O7  1  0.781  0.240  0.239  1.0
  O  O8  1  0.240  0.781  0.239  1.0
  O  O9  1  0.240  0.240  0.778  1.0
  O  O10  1  0.760  0.219  0.761  1.0
  O  O11  1  0.760  0.760  0.222  1.0
  O  O12  1  0.219  0.760  0.761  1.0
  O  O13  1  0.760  0.760  0.759  1.0
[/CIF]
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