The material structure described by La3GaO6 crystallizes in the orthorhombic Cmc2_1 space group. There are two inequivalent La sites. In the first La site, La(1) is bonded to one O(4), two equivalent O(1), two equivalent O(2), and two equivalent O(3) atoms to form distorted LaO7 pentagonal bipyramids that share  a cornercorner with one La(2)O7 hexagonal pyramid, corners with four equivalent La(1)O7 pentagonal bipyramids, corners with three equivalent Ga(1)O4 tetrahedra, edges with three equivalent La(2)O7 hexagonal pyramids, edges with two equivalent La(1)O7 pentagonal bipyramids,  an edgeedge with one Ga(1)O4 tetrahedra, and  a faceface with one La(1)O7 pentagonal bipyramid. In the second La site, La(2) is bonded to one O(4), two equivalent O(2), and four equivalent O(1) atoms to form distorted LaO7 hexagonal pyramids that share corners with two equivalent La(1)O7 pentagonal bipyramids,  a cornercorner with one Ga(1)O4 tetrahedra, edges with two equivalent La(2)O7 hexagonal pyramids, edges with six equivalent La(1)O7 pentagonal bipyramids, and  an edgeedge with one Ga(1)O4 tetrahedra. Ga(1) is bonded to one O(3), one O(4), and two equivalent O(2) atoms to form GaO4 tetrahedra that share  a cornercorner with one La(2)O7 hexagonal pyramid, corners with six equivalent La(1)O7 pentagonal bipyramids,  an edgeedge with one La(2)O7 hexagonal pyramid, and edges with two equivalent La(1)O7 pentagonal bipyramids. There are four inequivalent O sites. In the first O site, O(1) is bonded to two equivalent La(1) and two equivalent La(2) atoms to form OLa4 tetrahedra that share corners with two equivalent O(1)La4 tetrahedra, corners with six equivalent O(2)La3Ga trigonal pyramids, edges with three equivalent O(1)La4 tetrahedra, and  an edgeedge with one O(2)La3Ga trigonal pyramid. In the second O site, O(2) is bonded to one La(2), two equivalent La(1), and one Ga(1) atom to form distorted OLa3Ga trigonal pyramids that share corners with six equivalent O(1)La4 tetrahedra, corners with two equivalent O(2)La3Ga trigonal pyramids,  an edgeedge with one O(1)La4 tetrahedra, and  an edgeedge with one O(2)La3Ga trigonal pyramid. In the third O site, O(3) is bonded in a 5-coordinate geometry to four equivalent La(1) and one Ga(1) atom. In the fourth O site, O(4) is bonded in a distorted rectangular see-saw-like geometry to one La(2), two equivalent La(1), and one Ga(1) atom. is represented by the CIF file [CIF]
data_La3GaO6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.545
_cell_length_b   7.545
_cell_length_c   5.681
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   103.030
_symmetry_Int_Tables_number   1
_cell_volume   315.124
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  La  La0  1  0.087  0.301  0.467  1.0
  La  La1  1  0.301  0.087  0.967  1.0
  La  La2  1  0.605  0.395  0.429  1.0
  La  La3  1  0.395  0.605  0.929  1.0
  La  La4  1  0.699  0.913  0.467  1.0
  La  La5  1  0.913  0.699  0.967  1.0
  Ga  Ga6  1  0.809  0.191  0.005  1.0
  Ga  Ga7  1  0.191  0.809  0.505  1.0
  O  O8  1  0.329  0.353  0.200  1.0
  O  O9  1  0.353  0.329  0.700  1.0
  O  O10  1  0.108  0.588  0.667  1.0
  O  O11  1  0.588  0.108  0.167  1.0
  O  O12  1  0.955  0.045  0.130  1.0
  O  O13  1  0.786  0.214  0.682  1.0
  O  O14  1  0.214  0.786  0.182  1.0
  O  O15  1  0.045  0.955  0.630  1.0
  O  O16  1  0.412  0.892  0.667  1.0
  O  O17  1  0.892  0.412  0.167  1.0
  O  O18  1  0.647  0.671  0.200  1.0
  O  O19  1  0.671  0.647  0.700  1.0
[/CIF]
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The material structure described by La3GaO6 crystallizes in the orthorhombic Cmc2_1 space group. There are two inequivalent La sites. In the first La site, La(1) is bonded to one O(4), two equivalent O(1), two equivalent O(2), and two equivalent O(3) atoms to form distorted LaO7 pentagonal bipyramids that share  a cornercorner with one La(2)O7 hexagonal pyramid, corners with four equivalent La(1)O7 pentagonal bipyramids, corners with three equivalent Ga(1)O4 tetrahedra, edges with three equivalent La(2)O7 hexagonal pyramids, edges with two equivalent La(1)O7 pentagonal bipyramids,  an edgeedge with one Ga(1)O4 tetrahedra, and  a faceface with one La(1)O7 pentagonal bipyramid. In the second La site, La(2) is bonded to one O(4), two equivalent O(2), and four equivalent O(1) atoms to form distorted LaO7 hexagonal pyramids that share corners with two equivalent La(1)O7 pentagonal bipyramids,  a cornercorner with one Ga(1)O4 tetrahedra, edges with two equivalent La(2)O7 hexagonal pyramids, edges with six equivalent La(1)O7 pentagonal bipyramids, and  an edgeedge with one Ga(1)O4 tetrahedra. Ga(1) is bonded to one O(3), one O(4), and two equivalent O(2) atoms to form GaO4 tetrahedra that share  a cornercorner with one La(2)O7 hexagonal pyramid, corners with six equivalent La(1)O7 pentagonal bipyramids,  an edgeedge with one La(2)O7 hexagonal pyramid, and edges with two equivalent La(1)O7 pentagonal bipyramids. There are four inequivalent O sites. In the first O site, O(1) is bonded to two equivalent La(1) and two equivalent La(2) atoms to form OLa4 tetrahedra that share corners with two equivalent O(1)La4 tetrahedra, corners with six equivalent O(2)La3Ga trigonal pyramids, edges with three equivalent O(1)La4 tetrahedra, and  an edgeedge with one O(2)La3Ga trigonal pyramid. In the second O site, O(2) is bonded to one La(2), two equivalent La(1), and one Ga(1) atom to form distorted OLa3Ga trigonal pyramids that share corners with six equivalent O(1)La4 tetrahedra, corners with two equivalent O(2)La3Ga trigonal pyramids,  an edgeedge with one O(1)La4 tetrahedra, and  an edgeedge with one O(2)La3Ga trigonal pyramid. In the third O site, O(3) is bonded in a 5-coordinate geometry to four equivalent La(1) and one Ga(1) atom. In the fourth O site, O(4) is bonded in a distorted rectangular see-saw-like geometry to one La(2), two equivalent La(1), and one Ga(1) atom. is represented by the CIF file [CIF]
data_La3GaO6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.545
_cell_length_b   7.545
_cell_length_c   5.681
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   103.030
_symmetry_Int_Tables_number   1
_cell_volume   315.124
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  La  La0  1  0.087  0.301  0.467  1.0
  La  La1  1  0.301  0.087  0.967  1.0
  La  La2  1  0.605  0.395  0.429  1.0
  La  La3  1  0.395  0.605  0.929  1.0
  La  La4  1  0.699  0.913  0.467  1.0
  La  La5  1  0.913  0.699  0.967  1.0
  Ga  Ga6  1  0.809  0.191  0.005  1.0
  Ga  Ga7  1  0.191  0.809  0.505  1.0
  O  O8  1  0.329  0.353  0.200  1.0
  O  O9  1  0.353  0.329  0.700  1.0
  O  O10  1  0.108  0.588  0.667  1.0
  O  O11  1  0.588  0.108  0.167  1.0
  O  O12  1  0.955  0.045  0.130  1.0
  O  O13  1  0.786  0.214  0.682  1.0
  O  O14  1  0.214  0.786  0.182  1.0
  O  O15  1  0.045  0.955  0.630  1.0
  O  O16  1  0.412  0.892  0.667  1.0
  O  O17  1  0.892  0.412  0.167  1.0
  O  O18  1  0.647  0.671  0.200  1.0
  O  O19  1  0.671  0.647  0.700  1.0
[/CIF]
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