The compound described by Si3NH9 is Indium-like structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of two trisilylamine molecules. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one H(4), one H(8), and one H(9) atom to form corner-sharing SiH3N tetrahedra. In the second Si site, Si(2) is bonded to one N(1), one H(5), one H(6), and one H(7) atom to form corner-sharing SiH3N tetrahedra. In the third Si site, Si(3) is bonded to one N(1), one H(1), one H(2), and one H(3) atom to form corner-sharing SiH3N tetrahedra. N(1) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(3) atom. There are nine inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one Si(3) atom. In the second H site, H(2) is bonded in a single-bond geometry to one Si(3) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Si(3) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one Si(1) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one Si(2) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one Si(2) atom. In the seventh H site, H(7) is bonded in a single-bond geometry to one Si(2) atom. In the eighth H site, H(8) is bonded in a single-bond geometry to one Si(1) atom. In the ninth H site, H(9) is bonded in a single-bond geometry to one Si(1) atom. is represented by the CIF file [CIF]
data_Si3H9N
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.037
_cell_length_b   7.095
_cell_length_c   8.502
_cell_angle_alpha   95.406
_cell_angle_beta   99.380
_cell_angle_gamma   118.782
_symmetry_Int_Tables_number   1
_cell_volume   359.658
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.231  0.303  0.204  1.0
  Si  Si1  1  0.769  0.697  0.796  1.0
  Si  Si2  1  0.719  0.441  0.269  1.0
  Si  Si3  1  0.281  0.559  0.731  1.0
  Si  Si4  1  0.417  0.213  0.724  1.0
  Si  Si5  1  0.583  0.787  0.276  1.0
  H  H6  1  0.373  0.794  0.266  1.0
  H  H7  1  0.627  0.206  0.734  1.0
  H  H8  1  0.741  0.913  0.437  1.0
  H  H9  1  0.259  0.087  0.563  1.0
  H  H10  1  0.693  0.893  0.147  1.0
  H  H11  1  0.307  0.107  0.853  1.0
  H  H12  1  0.124  0.312  0.340  1.0
  H  H13  1  0.876  0.688  0.660  1.0
  H  H14  1  0.302  0.699  0.606  1.0
  H  H15  1  0.698  0.301  0.394  1.0
  H  H16  1  0.060  0.351  0.678  1.0
  H  H17  1  0.940  0.649  0.322  1.0
  H  H18  1  0.293  0.683  0.888  1.0
  H  H19  1  0.707  0.317  0.112  1.0
  H  H20  1  0.777  0.912  0.824  1.0
  H  H21  1  0.223  0.088  0.176  1.0
  H  H22  1  0.900  0.679  0.946  1.0
  H  H23  1  0.100  0.321  0.054  1.0
  N  N24  1  0.489  0.489  0.750  1.0
  N  N25  1  0.511  0.511  0.250  1.0
[/CIF]
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The compound described by Si3NH9 is Indium-like structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of two trisilylamine molecules. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one H(4), one H(8), and one H(9) atom to form corner-sharing SiH3N tetrahedra. In the second Si site, Si(2) is bonded to one N(1), one H(5), one H(6), and one H(7) atom to form corner-sharing SiH3N tetrahedra. In the third Si site, Si(3) is bonded to one N(1), one H(1), one H(2), and one H(3) atom to form corner-sharing SiH3N tetrahedra. N(1) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(3) atom. There are nine inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one Si(3) atom. In the second H site, H(2) is bonded in a single-bond geometry to one Si(3) atom. In the third H site, H(3) is bonded in a single-bond geometry to one Si(3) atom. In the fourth H site, H(4) is bonded in a single-bond geometry to one Si(1) atom. In the fifth H site, H(5) is bonded in a single-bond geometry to one Si(2) atom. In the sixth H site, H(6) is bonded in a single-bond geometry to one Si(2) atom. In the seventh H site, H(7) is bonded in a single-bond geometry to one Si(2) atom. In the eighth H site, H(8) is bonded in a single-bond geometry to one Si(1) atom. In the ninth H site, H(9) is bonded in a single-bond geometry to one Si(1) atom. is represented by the CIF file [CIF]
data_Si3H9N
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.037
_cell_length_b   7.095
_cell_length_c   8.502
_cell_angle_alpha   95.406
_cell_angle_beta   99.380
_cell_angle_gamma   118.782
_symmetry_Int_Tables_number   1
_cell_volume   359.658
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.231  0.303  0.204  1.0
  Si  Si1  1  0.769  0.697  0.796  1.0
  Si  Si2  1  0.719  0.441  0.269  1.0
  Si  Si3  1  0.281  0.559  0.731  1.0
  Si  Si4  1  0.417  0.213  0.724  1.0
  Si  Si5  1  0.583  0.787  0.276  1.0
  H  H6  1  0.373  0.794  0.266  1.0
  H  H7  1  0.627  0.206  0.734  1.0
  H  H8  1  0.741  0.913  0.437  1.0
  H  H9  1  0.259  0.087  0.563  1.0
  H  H10  1  0.693  0.893  0.147  1.0
  H  H11  1  0.307  0.107  0.853  1.0
  H  H12  1  0.124  0.312  0.340  1.0
  H  H13  1  0.876  0.688  0.660  1.0
  H  H14  1  0.302  0.699  0.606  1.0
  H  H15  1  0.698  0.301  0.394  1.0
  H  H16  1  0.060  0.351  0.678  1.0
  H  H17  1  0.940  0.649  0.322  1.0
  H  H18  1  0.293  0.683  0.888  1.0
  H  H19  1  0.707  0.317  0.112  1.0
  H  H20  1  0.777  0.912  0.824  1.0
  H  H21  1  0.223  0.088  0.176  1.0
  H  H22  1  0.900  0.679  0.946  1.0
  H  H23  1  0.100  0.321  0.054  1.0
  N  N24  1  0.489  0.489  0.750  1.0
  N  N25  1  0.511  0.511  0.250  1.0
[/CIF]
.