The crystal structure described by Ga3NO3 crystallizes in the triclinic P1 space group. There are twelve inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), one O(2), one O(4), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(6)NO3 tetrahedra. In the second Ga site, Ga(2) is bonded to one N(3), one O(1), one O(3), and one O(6) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, and corners with two equivalent Ga(11)N2O2 tetrahedra. In the third Ga site, Ga(3) is bonded to one N(4), one O(3), one O(4), and one O(8) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(12)N2O2 tetrahedra. In the fourth Ga site, Ga(4) is bonded to one N(2), one O(2), one O(6), and one O(7) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(10)NO3 tetrahedra. In the fifth Ga site, Ga(5) is bonded to one N(1), one O(10), one O(6), and one O(8) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(7)NO3 tetrahedra. In the sixth Ga site, Ga(6) is bonded to one N(1), one O(2), one O(5), and one O(9) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra, and corners with two equivalent Ga(1)O4 tetrahedra. In the seventh Ga site, Ga(7) is bonded to one N(1), one O(11), one O(12), and one O(8) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(5)NO3 tetrahedra. In the eighth Ga site, Ga(8) is bonded to one O(10), one O(11), one O(4), and one O(7) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, and corners with two equivalent Ga(9)NO3 tetrahedra. In the ninth Ga site, Ga(9) is bonded to one N(3), one O(10), one O(11), and one O(5) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra, and corners with two equivalent Ga(8)O4 tetrahedra. In the tenth Ga site, Ga(10) is bonded to one N(2), one O(12), one O(7), and one O(9) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(4)NO3 tetrahedra. In the eleventh Ga site, Ga(11) is bonded to one N(3), one N(4), one O(1), and one O(12) atom to form GaN2O2 tetrahedra that share  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, and corners with two equivalent Ga(2)NO3 tetrahedra. In the twelfth Ga site, Ga(12) is bonded to one N(2), one N(4), one O(3), and one O(5) atom to form GaN2O2 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra, and corners with two equivalent Ga(3)NO3 tetrahedra. There are four inequivalent N sites. In the first N site, N(1) is bonded in a trigonal planar geometry to one Ga(5), one Ga(6), and one Ga(7) atom. In the second N site, N(2) is bonded in a trigonal planar geometry to one Ga(10), one Ga(12), and one Ga(4) atom. In the third N site, N(3) is bonded in a trigonal planar geometry to one Ga(11), one Ga(2), and one Ga(9) atom. In the fourth N site, N(4) is bonded in a trigonal planar geometry to one Ga(11), one Ga(12), and one Ga(3) atom. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one Ga(1), one Ga(11), and one Ga(2) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Ga(1), one Ga(4), and one Ga(6) atom. In the third O site, O(3) is bonded in a trigonal planar geometry to one Ga(12), one Ga(2), and one Ga(3) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Ga(1), one Ga(3), and one Ga(8) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Ga(12), one Ga(6), and one Ga(9) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Ga(2), one Ga(4), and one Ga(5) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to one Ga(10), one Ga(4), and one Ga(8) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ga(3), one Ga(5), and one Ga(7) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one Ga(1), one Ga(10), and one Ga(6) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one Ga(5), one Ga(8), and one Ga(9) atom. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one Ga(7), one Ga(8), and one Ga(9) atom. In the twelfth O site, O(12) is bonded in a trigonal non-coplanar geometry to one Ga(10), one Ga(11), and one Ga(7) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga3NO3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.141
_cell_length_b   8.365
_cell_length_c   8.419
_cell_angle_alpha   60.493
_cell_angle_beta   89.462
_cell_angle_gamma   89.304
_symmetry_Int_Tables_number   1
_cell_volume   376.376
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.544  0.907  0.258  1.0
  Ga  Ga1  1  0.852  0.567  0.504  1.0
  Ga  Ga2  1  0.534  0.261  0.828  1.0
  Ga  Ga3  1  0.849  0.921  0.572  1.0
  Ga  Ga4  1  0.851  0.503  0.920  1.0
  Ga  Ga5  1  0.044  0.090  0.167  1.0
  Ga  Ga6  1  0.336  0.425  0.084  1.0
  Ga  Ga7  1  0.541  0.838  0.905  1.0
  Ga  Ga8  1  0.040  0.743  0.089  1.0
  Ga  Ga9  1  0.330  0.091  0.492  1.0
  Ga  Ga10  1  0.332  0.488  0.435  1.0
  Ga  Ga11  1  0.053  0.170  0.744  1.0
  N  N12  1  0.072  0.342  0.049  1.0
  N  N13  1  0.069  0.035  0.620  1.0
  N  N14  1  0.075  0.622  0.338  1.0
  N  N15  1  0.299  0.318  0.681  1.0
  O  O16  1  0.574  0.653  0.386  1.0
  O  O17  1  0.797  0.988  0.322  1.0
  O  O18  1  0.799  0.321  0.694  1.0
  O  O19  1  0.548  0.998  0.003  1.0
  O  O20  1  0.035  0.999  0.002  1.0
  O  O21  1  0.867  0.664  0.666  1.0
  O  O22  1  0.566  0.956  0.651  1.0
  O  O23  1  0.576  0.385  0.964  1.0
  O  O24  1  0.303  0.004  0.317  1.0
  O  O25  1  0.796  0.693  0.983  1.0
  O  O26  1  0.303  0.684  0.997  1.0
  O  O27  1  0.421  0.335  0.329  1.0
[/CIF]
.
The crystal structure described by Ga3NO3 crystallizes in the triclinic P1 space group. There are twelve inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(1), one O(2), one O(4), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(6)NO3 tetrahedra. In the second Ga site, Ga(2) is bonded to one N(3), one O(1), one O(3), and one O(6) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, and corners with two equivalent Ga(11)N2O2 tetrahedra. In the third Ga site, Ga(3) is bonded to one N(4), one O(3), one O(4), and one O(8) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(12)N2O2 tetrahedra. In the fourth Ga site, Ga(4) is bonded to one N(2), one O(2), one O(6), and one O(7) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(10)NO3 tetrahedra. In the fifth Ga site, Ga(5) is bonded to one N(1), one O(10), one O(6), and one O(8) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(7)NO3 tetrahedra. In the sixth Ga site, Ga(6) is bonded to one N(1), one O(2), one O(5), and one O(9) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra, and corners with two equivalent Ga(1)O4 tetrahedra. In the seventh Ga site, Ga(7) is bonded to one N(1), one O(11), one O(12), and one O(8) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(5)NO3 tetrahedra. In the eighth Ga site, Ga(8) is bonded to one O(10), one O(11), one O(4), and one O(7) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, and corners with two equivalent Ga(9)NO3 tetrahedra. In the ninth Ga site, Ga(9) is bonded to one N(3), one O(10), one O(11), and one O(5) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(5)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra, and corners with two equivalent Ga(8)O4 tetrahedra. In the tenth Ga site, Ga(10) is bonded to one N(2), one O(12), one O(7), and one O(9) atom to form GaNO3 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra,  a cornercorner with one Ga(8)O4 tetrahedra, and corners with two equivalent Ga(4)NO3 tetrahedra. In the eleventh Ga site, Ga(11) is bonded to one N(3), one N(4), one O(1), and one O(12) atom to form GaN2O2 tetrahedra that share  a cornercorner with one Ga(12)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(3)NO3 tetrahedra,  a cornercorner with one Ga(7)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra,  a cornercorner with one Ga(1)O4 tetrahedra, and corners with two equivalent Ga(2)NO3 tetrahedra. In the twelfth Ga site, Ga(12) is bonded to one N(2), one N(4), one O(3), and one O(5) atom to form GaN2O2 tetrahedra that share  a cornercorner with one Ga(11)N2O2 tetrahedra,  a cornercorner with one Ga(10)NO3 tetrahedra,  a cornercorner with one Ga(2)NO3 tetrahedra,  a cornercorner with one Ga(4)NO3 tetrahedra,  a cornercorner with one Ga(6)NO3 tetrahedra,  a cornercorner with one Ga(9)NO3 tetrahedra, and corners with two equivalent Ga(3)NO3 tetrahedra. There are four inequivalent N sites. In the first N site, N(1) is bonded in a trigonal planar geometry to one Ga(5), one Ga(6), and one Ga(7) atom. In the second N site, N(2) is bonded in a trigonal planar geometry to one Ga(10), one Ga(12), and one Ga(4) atom. In the third N site, N(3) is bonded in a trigonal planar geometry to one Ga(11), one Ga(2), and one Ga(9) atom. In the fourth N site, N(4) is bonded in a trigonal planar geometry to one Ga(11), one Ga(12), and one Ga(3) atom. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one Ga(1), one Ga(11), and one Ga(2) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Ga(1), one Ga(4), and one Ga(6) atom. In the third O site, O(3) is bonded in a trigonal planar geometry to one Ga(12), one Ga(2), and one Ga(3) atom. In the fourth O site, O(4) is bonded in a trigonal planar geometry to one Ga(1), one Ga(3), and one Ga(8) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Ga(12), one Ga(6), and one Ga(9) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Ga(2), one Ga(4), and one Ga(5) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to one Ga(10), one Ga(4), and one Ga(8) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ga(3), one Ga(5), and one Ga(7) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one Ga(1), one Ga(10), and one Ga(6) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one Ga(5), one Ga(8), and one Ga(9) atom. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one Ga(7), one Ga(8), and one Ga(9) atom. In the twelfth O site, O(12) is bonded in a trigonal non-coplanar geometry to one Ga(10), one Ga(11), and one Ga(7) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga3NO3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.141
_cell_length_b   8.365
_cell_length_c   8.419
_cell_angle_alpha   60.493
_cell_angle_beta   89.462
_cell_angle_gamma   89.304
_symmetry_Int_Tables_number   1
_cell_volume   376.376
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.544  0.907  0.258  1.0
  Ga  Ga1  1  0.852  0.567  0.504  1.0
  Ga  Ga2  1  0.534  0.261  0.828  1.0
  Ga  Ga3  1  0.849  0.921  0.572  1.0
  Ga  Ga4  1  0.851  0.503  0.920  1.0
  Ga  Ga5  1  0.044  0.090  0.167  1.0
  Ga  Ga6  1  0.336  0.425  0.084  1.0
  Ga  Ga7  1  0.541  0.838  0.905  1.0
  Ga  Ga8  1  0.040  0.743  0.089  1.0
  Ga  Ga9  1  0.330  0.091  0.492  1.0
  Ga  Ga10  1  0.332  0.488  0.435  1.0
  Ga  Ga11  1  0.053  0.170  0.744  1.0
  N  N12  1  0.072  0.342  0.049  1.0
  N  N13  1  0.069  0.035  0.620  1.0
  N  N14  1  0.075  0.622  0.338  1.0
  N  N15  1  0.299  0.318  0.681  1.0
  O  O16  1  0.574  0.653  0.386  1.0
  O  O17  1  0.797  0.988  0.322  1.0
  O  O18  1  0.799  0.321  0.694  1.0
  O  O19  1  0.548  0.998  0.003  1.0
  O  O20  1  0.035  0.999  0.002  1.0
  O  O21  1  0.867  0.664  0.666  1.0
  O  O22  1  0.566  0.956  0.651  1.0
  O  O23  1  0.576  0.385  0.964  1.0
  O  O24  1  0.303  0.004  0.317  1.0
  O  O25  1  0.796  0.693  0.983  1.0
  O  O26  1  0.303  0.684  0.997  1.0
  O  O27  1  0.421  0.335  0.329  1.0
[/CIF]
.