The material described by W10B3Si3 crystallizes in the orthorhombic Fmm2 space group. There are four inequivalent W sites. In the first W site, W(4) is bonded in a 6-coordinate geometry to one B(2), two equivalent B(1), one Si(1), and two equivalent Si(2) atoms. In the second W site, W(1) is bonded in a 5-coordinate geometry to one B(1), one B(2), one Si(1), and two equivalent Si(2) atoms. In the third W site, W(2) is bonded to one B(2), two equivalent B(1), and two equivalent Si(2) atoms to form distorted WSi2B3 trigonal bipyramids that share corners with two equivalent W(2)Si2B3 trigonal bipyramids, corners with two equivalent W(3)Si3B2 trigonal bipyramids, edges with three equivalent W(3)Si3B2 trigonal bipyramids, and  a faceface with one W(2)Si2B3 trigonal bipyramid. In the fourth W site, W(3) is bonded to two equivalent B(1), one Si(1), and two equivalent Si(2) atoms to form distorted WSi3B2 trigonal bipyramids that share corners with two equivalent W(2)Si2B3 trigonal bipyramids, corners with two equivalent W(3)Si3B2 trigonal bipyramids, edges with three equivalent W(2)Si2B3 trigonal bipyramids, and  a faceface with one W(3)Si3B2 trigonal bipyramid. There are two inequivalent B sites. In the first B site, B(1) is bonded in a 9-coordinate geometry to two equivalent W(1), two equivalent W(2), two equivalent W(3), two equivalent W(4), and one B(1) atom. In the second B site, B(2) is bonded in a 9-coordinate geometry to two equivalent W(2), two equivalent W(4), four equivalent W(1), and one Si(1) atom. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to two equivalent W(3), two equivalent W(4), four equivalent W(1), and one B(2) atom. In the second Si site, Si(2) is bonded in a 10-coordinate geometry to two equivalent W(2), two equivalent W(3), two equivalent W(4), and four equivalent W(1) atoms. is represented by the CIF card [CIF]
data_Si3B3W10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.112
_cell_length_b   7.061
_cell_length_c   6.190
_cell_angle_alpha   64.529
_cell_angle_beta   63.677
_cell_angle_gamma   51.794
_symmetry_Int_Tables_number   1
_cell_volume   213.514
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.630  0.370  0.630  1.0
  Si  Si1  1  0.246  0.254  0.246  1.0
  Si  Si2  1  0.746  0.754  0.746  1.0
  B  B3  1  0.877  0.123  0.127  1.0
  B  B4  1  0.127  0.873  0.877  1.0
  B  B5  1  0.368  0.632  0.368  1.0
  W  W6  1  0.523  0.192  0.465  1.0
  W  W7  1  0.180  0.535  0.808  1.0
  W  W8  1  0.018  0.700  0.300  1.0
  W  W9  1  0.708  0.001  0.999  1.0
  W  W10  1  0.465  0.820  0.523  1.0
  W  W11  1  0.808  0.477  0.180  1.0
  W  W12  1  0.999  0.292  0.708  1.0
  W  W13  1  0.300  0.982  0.018  1.0
  W  W14  1  0.495  0.505  0.010  1.0
  W  W15  1  0.010  0.990  0.495  1.0
[/CIF]
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The material described by W10B3Si3 crystallizes in the orthorhombic Fmm2 space group. There are four inequivalent W sites. In the first W site, W(4) is bonded in a 6-coordinate geometry to one B(2), two equivalent B(1), one Si(1), and two equivalent Si(2) atoms. In the second W site, W(1) is bonded in a 5-coordinate geometry to one B(1), one B(2), one Si(1), and two equivalent Si(2) atoms. In the third W site, W(2) is bonded to one B(2), two equivalent B(1), and two equivalent Si(2) atoms to form distorted WSi2B3 trigonal bipyramids that share corners with two equivalent W(2)Si2B3 trigonal bipyramids, corners with two equivalent W(3)Si3B2 trigonal bipyramids, edges with three equivalent W(3)Si3B2 trigonal bipyramids, and  a faceface with one W(2)Si2B3 trigonal bipyramid. In the fourth W site, W(3) is bonded to two equivalent B(1), one Si(1), and two equivalent Si(2) atoms to form distorted WSi3B2 trigonal bipyramids that share corners with two equivalent W(2)Si2B3 trigonal bipyramids, corners with two equivalent W(3)Si3B2 trigonal bipyramids, edges with three equivalent W(2)Si2B3 trigonal bipyramids, and  a faceface with one W(3)Si3B2 trigonal bipyramid. There are two inequivalent B sites. In the first B site, B(1) is bonded in a 9-coordinate geometry to two equivalent W(1), two equivalent W(2), two equivalent W(3), two equivalent W(4), and one B(1) atom. In the second B site, B(2) is bonded in a 9-coordinate geometry to two equivalent W(2), two equivalent W(4), four equivalent W(1), and one Si(1) atom. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a 9-coordinate geometry to two equivalent W(3), two equivalent W(4), four equivalent W(1), and one B(2) atom. In the second Si site, Si(2) is bonded in a 10-coordinate geometry to two equivalent W(2), two equivalent W(3), two equivalent W(4), and four equivalent W(1) atoms. is represented by the CIF card [CIF]
data_Si3B3W10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.112
_cell_length_b   7.061
_cell_length_c   6.190
_cell_angle_alpha   64.529
_cell_angle_beta   63.677
_cell_angle_gamma   51.794
_symmetry_Int_Tables_number   1
_cell_volume   213.514
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.630  0.370  0.630  1.0
  Si  Si1  1  0.246  0.254  0.246  1.0
  Si  Si2  1  0.746  0.754  0.746  1.0
  B  B3  1  0.877  0.123  0.127  1.0
  B  B4  1  0.127  0.873  0.877  1.0
  B  B5  1  0.368  0.632  0.368  1.0
  W  W6  1  0.523  0.192  0.465  1.0
  W  W7  1  0.180  0.535  0.808  1.0
  W  W8  1  0.018  0.700  0.300  1.0
  W  W9  1  0.708  0.001  0.999  1.0
  W  W10  1  0.465  0.820  0.523  1.0
  W  W11  1  0.808  0.477  0.180  1.0
  W  W12  1  0.999  0.292  0.708  1.0
  W  W13  1  0.300  0.982  0.018  1.0
  W  W14  1  0.495  0.505  0.010  1.0
  W  W15  1  0.010  0.990  0.495  1.0
[/CIF]
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