The compound described by Ga2O3 crystallizes in the triclinic P1 space group. There are sixteen inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(11), one O(2), one O(5), and one O(9) atom to form distorted GaO4 tetrahedra that share  a cornercorner with one Ga(3)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent Ga(6)O6 octahedra, and  an edgeedge with one Ga(8)O4 trigonal pyramid. The corner-sharing octahedral tilt angles range from 58-67°. In the second Ga site, Ga(2) is bonded in a 6-coordinate geometry to one O(1), one O(12), one O(2), one O(4), one O(6), and one O(7) atom. In the third Ga site, Ga(3) is bonded to one O(10), one O(2), one O(3), one O(4), one O(6), and one O(7) atom to form distorted corner-sharing GaO6 octahedra. In the fourth Ga site, Ga(4) is bonded to one O(13), one O(17), one O(20), and one O(8) atom to form corner-sharing GaO4 tetrahedra. The corner-sharing octahedral tilt angles range from 54-67°. In the fifth Ga site, Ga(5) is bonded to one O(11), one O(14), one O(16), one O(19), one O(5), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Ga(11)O4 tetrahedra,  a cornercorner with one Ga(4)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(14)O4 tetrahedra,  a cornercorner with one Ga(8)O4 trigonal pyramid,  an edgeedge with one Ga(10)O6 octahedra, and edges with two equivalent Ga(6)O6 octahedra. In the sixth Ga site, Ga(6) is bonded to one O(11), one O(14), one O(16), one O(18), one O(8), and one O(9) atom to form GaO6 octahedra that share  a cornercorner with one Ga(11)O4 tetrahedra,  a cornercorner with one Ga(4)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(14)O4 tetrahedra,  a cornercorner with one Ga(8)O4 trigonal pyramid,  an edgeedge with one Ga(10)O6 octahedra, and edges with two equivalent Ga(5)O6 octahedra. In the seventh Ga site, Ga(7) is bonded in a rectangular see-saw-like geometry to one O(12), one O(3), one O(4), and one O(7) atom. In the eighth Ga site, Ga(8) is bonded to one O(10), one O(11), one O(12), and one O(2) atom to form GaO4 trigonal pyramids that share  a cornercorner with one Ga(5)O6 octahedra,  a cornercorner with one Ga(6)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent Ga(11)O4 tetrahedra, and  an edgeedge with one Ga(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 55-67°. In the ninth Ga site, Ga(9) is bonded to one O(13), one O(15), one O(20), one O(21), one O(23), and one O(24) atom to form GaO6 octahedra that share  a cornercorner with one Ga(14)O4 tetrahedra, corners with two equivalent Ga(15)O4 tetrahedra, corners with two equivalent Ga(16)O4 tetrahedra, corners with two equivalent Ga(4)O4 tetrahedra, and  an edgeedge with one Ga(10)O6 octahedra. In the tenth Ga site, Ga(10) is bonded to one O(13), one O(14), one O(17), one O(18), one O(19), and one O(20) atom to form GaO6 octahedra that share corners with three equivalent Ga(14)O4 tetrahedra, corners with three equivalent Ga(4)O4 tetrahedra,  an edgeedge with one Ga(5)O6 octahedra,  an edgeedge with one Ga(6)O6 octahedra, and  an edgeedge with one Ga(9)O6 octahedra. In the eleventh Ga site, Ga(11) is bonded to one O(10), one O(12), one O(16), and one O(6) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(5)O6 octahedra,  a cornercorner with one Ga(6)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, and corners with two equivalent Ga(8)O4 trigonal pyramids. The corner-sharing octahedral tilt angles range from 48-59°. In the twelfth Ga site, Ga(12) is bonded in a rectangular see-saw-like geometry to one O(1), one O(15), one O(21), and one O(22) atom. In the thirteenth Ga site, Ga(13) is bonded in a 6-coordinate geometry to one O(15), one O(17), one O(20), one O(21), one O(22), and one O(23) atom. In the fourteenth Ga site, Ga(14) is bonded to one O(14), one O(18), one O(19), and one O(23) atom to form corner-sharing GaO4 tetrahedra. The corner-sharing octahedral tilt angles range from 47-61°. In the fifteenth Ga site, Ga(15) is bonded to one O(15), one O(22), one O(24), and one O(4) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(3)O6 octahedra, corners with two equivalent Ga(9)O6 octahedra, and corners with two equivalent Ga(16)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 55-59°. In the sixteenth Ga site, Ga(16) is bonded to one O(21), one O(22), one O(24), and one O(7) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(3)O6 octahedra, corners with two equivalent Ga(9)O6 octahedra, and corners with two equivalent Ga(15)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 51-67°. There are twenty-four inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Ga(12) and one Ga(2) atom. In the second O site, O(2) is bonded to one Ga(1), one Ga(2), one Ga(3), and one Ga(8) atom to form a mixture of corner and edge-sharing OGa4 tetrahedra. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one Ga(3) and one Ga(7) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Ga(15), one Ga(2), one Ga(3), and one Ga(7) atom. In the fifth O site, O(5) is bonded in a bent 120 degrees geometry to one Ga(1) and one Ga(5) atom. In the sixth O site, O(6) is bonded in a trigonal non-coplanar geometry to one Ga(11), one Ga(2), and one Ga(3) atom. In the seventh O site, O(7) is bonded in a 4-coordinate geometry to one Ga(16), one Ga(2), one Ga(3), and one Ga(7) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ga(4), one Ga(5), and one Ga(6) atom. In the ninth O site, O(9) is bonded in a bent 120 degrees geometry to one Ga(1) and one Ga(6) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one Ga(11), one Ga(3), and one Ga(8) atom. In the eleventh O site, O(11) is bonded to one Ga(1), one Ga(5), one Ga(6), and one Ga(8) atom to form a mixture of corner and edge-sharing OGa4 tetrahedra. In the twelfth O site, O(12) is bonded to one Ga(11), one Ga(2), one Ga(7), and one Ga(8) atom to form distorted corner-sharing OGa4 tetrahedra. In the thirteenth O site, O(13) is bonded in a distorted trigonal non-coplanar geometry to one Ga(10), one Ga(4), and one Ga(9) atom. In the fourteenth O site, O(14) is bonded in a rectangular see-saw-like geometry to one Ga(10), one Ga(14), one Ga(5), and one Ga(6) atom. In the fifteenth O site, O(15) is bonded in a 4-coordinate geometry to one Ga(12), one Ga(13), one Ga(15), and one Ga(9) atom. In the sixteenth O site, O(16) is bonded in a trigonal planar geometry to one Ga(11), one Ga(5), and one Ga(6) atom. In the seventeenth O site, O(17) is bonded in a distorted trigonal non-coplanar geometry to one Ga(10), one Ga(13), and one Ga(4) atom. In the eighteenth O site, O(18) is bonded in a distorted trigonal planar geometry to one Ga(10), one Ga(14), and one Ga(6) atom. In the nineteenth O site, O(19) is bonded in a distorted trigonal planar geometry to one Ga(10), one Ga(14), and one Ga(5) atom. In the twentieth O site, O(20) is bonded in a distorted trigonal pyramidal geometry to one Ga(10), one Ga(13), one Ga(4), and one Ga(9) atom. In the twenty-first O site, O(21) is bonded in a 4-coordinate geometry to one Ga(12), one Ga(13), one Ga(16), and one Ga(9) atom. In the twenty-second O site, O(22) is bonded in a distorted trigonal non-coplanar geometry to one Ga(12), one Ga(13), one Ga(15), and one Ga(16) atom. In the twenty-third O site, O(23) is bonded in a trigonal non-coplanar geometry to one Ga(13), one Ga(14), and one Ga(9) atom. In the twenty-fourth O site, O(24) is bonded in a trigonal planar geometry to one Ga(15), one Ga(16), and one Ga(9) atom. is represented by the CIF card [CIF]
data_Ga2O3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.911
_cell_length_b   5.949
_cell_length_c   14.623
_cell_angle_alpha   88.729
_cell_angle_beta   87.978
_cell_angle_gamma   61.994
_symmetry_Int_Tables_number   1
_cell_volume   453.647
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.536  0.040  0.397  1.0
  Ga  Ga1  1  0.792  0.785  0.180  1.0
  Ga  Ga2  1  0.341  0.324  0.176  1.0
  Ga  Ga3  1  0.179  0.690  0.701  1.0
  Ga  Ga4  1  0.491  0.502  0.501  1.0
  Ga  Ga5  1  0.001  0.987  0.498  1.0
  Ga  Ga6  1  0.031  0.063  0.111  1.0
  Ga  Ga7  1  0.298  0.793  0.296  1.0
  Ga  Ga8  1  0.173  0.176  0.825  1.0
  Ga  Ga9  1  0.837  0.321  0.658  1.0
  Ga  Ga10  1  0.832  0.337  0.306  1.0
  Ga  Ga11  1  0.679  0.649  0.986  1.0
  Ga  Ga12  1  0.646  0.679  0.800  1.0
  Ga  Ga13  1  0.485  0.990  0.620  1.0
  Ga  Ga14  1  0.653  0.166  0.953  1.0
  Ga  Ga15  1  0.176  0.653  0.959  1.0
  O  O16  1  0.643  0.663  0.103  1.0
  O  O17  1  0.493  0.995  0.256  1.0
  O  O18  1  0.214  0.216  0.081  1.0
  O  O19  1  0.686  0.155  0.083  1.0
  O  O20  1  0.340  0.367  0.423  1.0
  O  O21  1  0.011  0.494  0.246  1.0
  O  O22  1  0.135  0.710  0.086  1.0
  O  O23  1  0.175  0.682  0.577  1.0
  O  O24  1  0.868  0.842  0.417  1.0
  O  O25  1  0.504  0.478  0.247  1.0
  O  O26  1  0.346  0.847  0.416  1.0
  O  O27  1  0.988  0.008  0.240  1.0
  O  O28  1  0.011  0.021  0.755  1.0
  O  O29  1  0.673  0.168  0.584  1.0
  O  O30  1  0.831  0.347  0.915  1.0
  O  O31  1  0.824  0.323  0.428  1.0
  O  O32  1  0.516  0.491  0.745  1.0
  O  O33  1  0.145  0.152  0.584  1.0
  O  O34  1  0.655  0.645  0.587  1.0
  O  O35  1  0.994  0.500  0.753  1.0
  O  O36  1  0.374  0.808  0.913  1.0
  O  O37  1  0.834  0.822  0.919  1.0
  O  O38  1  0.490  0.006  0.753  1.0
  O  O39  1  0.325  0.329  0.910  1.0
[/CIF]
.
The compound described by Ga2O3 crystallizes in the triclinic P1 space group. There are sixteen inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(11), one O(2), one O(5), and one O(9) atom to form distorted GaO4 tetrahedra that share  a cornercorner with one Ga(3)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent Ga(6)O6 octahedra, and  an edgeedge with one Ga(8)O4 trigonal pyramid. The corner-sharing octahedral tilt angles range from 58-67°. In the second Ga site, Ga(2) is bonded in a 6-coordinate geometry to one O(1), one O(12), one O(2), one O(4), one O(6), and one O(7) atom. In the third Ga site, Ga(3) is bonded to one O(10), one O(2), one O(3), one O(4), one O(6), and one O(7) atom to form distorted corner-sharing GaO6 octahedra. In the fourth Ga site, Ga(4) is bonded to one O(13), one O(17), one O(20), and one O(8) atom to form corner-sharing GaO4 tetrahedra. The corner-sharing octahedral tilt angles range from 54-67°. In the fifth Ga site, Ga(5) is bonded to one O(11), one O(14), one O(16), one O(19), one O(5), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Ga(11)O4 tetrahedra,  a cornercorner with one Ga(4)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(14)O4 tetrahedra,  a cornercorner with one Ga(8)O4 trigonal pyramid,  an edgeedge with one Ga(10)O6 octahedra, and edges with two equivalent Ga(6)O6 octahedra. In the sixth Ga site, Ga(6) is bonded to one O(11), one O(14), one O(16), one O(18), one O(8), and one O(9) atom to form GaO6 octahedra that share  a cornercorner with one Ga(11)O4 tetrahedra,  a cornercorner with one Ga(4)O4 tetrahedra, corners with two equivalent Ga(1)O4 tetrahedra, corners with two equivalent Ga(14)O4 tetrahedra,  a cornercorner with one Ga(8)O4 trigonal pyramid,  an edgeedge with one Ga(10)O6 octahedra, and edges with two equivalent Ga(5)O6 octahedra. In the seventh Ga site, Ga(7) is bonded in a rectangular see-saw-like geometry to one O(12), one O(3), one O(4), and one O(7) atom. In the eighth Ga site, Ga(8) is bonded to one O(10), one O(11), one O(12), and one O(2) atom to form GaO4 trigonal pyramids that share  a cornercorner with one Ga(5)O6 octahedra,  a cornercorner with one Ga(6)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent Ga(11)O4 tetrahedra, and  an edgeedge with one Ga(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 55-67°. In the ninth Ga site, Ga(9) is bonded to one O(13), one O(15), one O(20), one O(21), one O(23), and one O(24) atom to form GaO6 octahedra that share  a cornercorner with one Ga(14)O4 tetrahedra, corners with two equivalent Ga(15)O4 tetrahedra, corners with two equivalent Ga(16)O4 tetrahedra, corners with two equivalent Ga(4)O4 tetrahedra, and  an edgeedge with one Ga(10)O6 octahedra. In the tenth Ga site, Ga(10) is bonded to one O(13), one O(14), one O(17), one O(18), one O(19), and one O(20) atom to form GaO6 octahedra that share corners with three equivalent Ga(14)O4 tetrahedra, corners with three equivalent Ga(4)O4 tetrahedra,  an edgeedge with one Ga(5)O6 octahedra,  an edgeedge with one Ga(6)O6 octahedra, and  an edgeedge with one Ga(9)O6 octahedra. In the eleventh Ga site, Ga(11) is bonded to one O(10), one O(12), one O(16), and one O(6) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(5)O6 octahedra,  a cornercorner with one Ga(6)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, and corners with two equivalent Ga(8)O4 trigonal pyramids. The corner-sharing octahedral tilt angles range from 48-59°. In the twelfth Ga site, Ga(12) is bonded in a rectangular see-saw-like geometry to one O(1), one O(15), one O(21), and one O(22) atom. In the thirteenth Ga site, Ga(13) is bonded in a 6-coordinate geometry to one O(15), one O(17), one O(20), one O(21), one O(22), and one O(23) atom. In the fourteenth Ga site, Ga(14) is bonded to one O(14), one O(18), one O(19), and one O(23) atom to form corner-sharing GaO4 tetrahedra. The corner-sharing octahedral tilt angles range from 47-61°. In the fifteenth Ga site, Ga(15) is bonded to one O(15), one O(22), one O(24), and one O(4) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(3)O6 octahedra, corners with two equivalent Ga(9)O6 octahedra, and corners with two equivalent Ga(16)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 55-59°. In the sixteenth Ga site, Ga(16) is bonded to one O(21), one O(22), one O(24), and one O(7) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(3)O6 octahedra, corners with two equivalent Ga(9)O6 octahedra, and corners with two equivalent Ga(15)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 51-67°. There are twenty-four inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Ga(12) and one Ga(2) atom. In the second O site, O(2) is bonded to one Ga(1), one Ga(2), one Ga(3), and one Ga(8) atom to form a mixture of corner and edge-sharing OGa4 tetrahedra. In the third O site, O(3) is bonded in a bent 120 degrees geometry to one Ga(3) and one Ga(7) atom. In the fourth O site, O(4) is bonded in a 4-coordinate geometry to one Ga(15), one Ga(2), one Ga(3), and one Ga(7) atom. In the fifth O site, O(5) is bonded in a bent 120 degrees geometry to one Ga(1) and one Ga(5) atom. In the sixth O site, O(6) is bonded in a trigonal non-coplanar geometry to one Ga(11), one Ga(2), and one Ga(3) atom. In the seventh O site, O(7) is bonded in a 4-coordinate geometry to one Ga(16), one Ga(2), one Ga(3), and one Ga(7) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ga(4), one Ga(5), and one Ga(6) atom. In the ninth O site, O(9) is bonded in a bent 120 degrees geometry to one Ga(1) and one Ga(6) atom. In the tenth O site, O(10) is bonded in a trigonal planar geometry to one Ga(11), one Ga(3), and one Ga(8) atom. In the eleventh O site, O(11) is bonded to one Ga(1), one Ga(5), one Ga(6), and one Ga(8) atom to form a mixture of corner and edge-sharing OGa4 tetrahedra. In the twelfth O site, O(12) is bonded to one Ga(11), one Ga(2), one Ga(7), and one Ga(8) atom to form distorted corner-sharing OGa4 tetrahedra. In the thirteenth O site, O(13) is bonded in a distorted trigonal non-coplanar geometry to one Ga(10), one Ga(4), and one Ga(9) atom. In the fourteenth O site, O(14) is bonded in a rectangular see-saw-like geometry to one Ga(10), one Ga(14), one Ga(5), and one Ga(6) atom. In the fifteenth O site, O(15) is bonded in a 4-coordinate geometry to one Ga(12), one Ga(13), one Ga(15), and one Ga(9) atom. In the sixteenth O site, O(16) is bonded in a trigonal planar geometry to one Ga(11), one Ga(5), and one Ga(6) atom. In the seventeenth O site, O(17) is bonded in a distorted trigonal non-coplanar geometry to one Ga(10), one Ga(13), and one Ga(4) atom. In the eighteenth O site, O(18) is bonded in a distorted trigonal planar geometry to one Ga(10), one Ga(14), and one Ga(6) atom. In the nineteenth O site, O(19) is bonded in a distorted trigonal planar geometry to one Ga(10), one Ga(14), and one Ga(5) atom. In the twentieth O site, O(20) is bonded in a distorted trigonal pyramidal geometry to one Ga(10), one Ga(13), one Ga(4), and one Ga(9) atom. In the twenty-first O site, O(21) is bonded in a 4-coordinate geometry to one Ga(12), one Ga(13), one Ga(16), and one Ga(9) atom. In the twenty-second O site, O(22) is bonded in a distorted trigonal non-coplanar geometry to one Ga(12), one Ga(13), one Ga(15), and one Ga(16) atom. In the twenty-third O site, O(23) is bonded in a trigonal non-coplanar geometry to one Ga(13), one Ga(14), and one Ga(9) atom. In the twenty-fourth O site, O(24) is bonded in a trigonal planar geometry to one Ga(15), one Ga(16), and one Ga(9) atom. is represented by the CIF card [CIF]
data_Ga2O3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.911
_cell_length_b   5.949
_cell_length_c   14.623
_cell_angle_alpha   88.729
_cell_angle_beta   87.978
_cell_angle_gamma   61.994
_symmetry_Int_Tables_number   1
_cell_volume   453.647
_cell_formula_units_Z   8
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.536  0.040  0.397  1.0
  Ga  Ga1  1  0.792  0.785  0.180  1.0
  Ga  Ga2  1  0.341  0.324  0.176  1.0
  Ga  Ga3  1  0.179  0.690  0.701  1.0
  Ga  Ga4  1  0.491  0.502  0.501  1.0
  Ga  Ga5  1  0.001  0.987  0.498  1.0
  Ga  Ga6  1  0.031  0.063  0.111  1.0
  Ga  Ga7  1  0.298  0.793  0.296  1.0
  Ga  Ga8  1  0.173  0.176  0.825  1.0
  Ga  Ga9  1  0.837  0.321  0.658  1.0
  Ga  Ga10  1  0.832  0.337  0.306  1.0
  Ga  Ga11  1  0.679  0.649  0.986  1.0
  Ga  Ga12  1  0.646  0.679  0.800  1.0
  Ga  Ga13  1  0.485  0.990  0.620  1.0
  Ga  Ga14  1  0.653  0.166  0.953  1.0
  Ga  Ga15  1  0.176  0.653  0.959  1.0
  O  O16  1  0.643  0.663  0.103  1.0
  O  O17  1  0.493  0.995  0.256  1.0
  O  O18  1  0.214  0.216  0.081  1.0
  O  O19  1  0.686  0.155  0.083  1.0
  O  O20  1  0.340  0.367  0.423  1.0
  O  O21  1  0.011  0.494  0.246  1.0
  O  O22  1  0.135  0.710  0.086  1.0
  O  O23  1  0.175  0.682  0.577  1.0
  O  O24  1  0.868  0.842  0.417  1.0
  O  O25  1  0.504  0.478  0.247  1.0
  O  O26  1  0.346  0.847  0.416  1.0
  O  O27  1  0.988  0.008  0.240  1.0
  O  O28  1  0.011  0.021  0.755  1.0
  O  O29  1  0.673  0.168  0.584  1.0
  O  O30  1  0.831  0.347  0.915  1.0
  O  O31  1  0.824  0.323  0.428  1.0
  O  O32  1  0.516  0.491  0.745  1.0
  O  O33  1  0.145  0.152  0.584  1.0
  O  O34  1  0.655  0.645  0.587  1.0
  O  O35  1  0.994  0.500  0.753  1.0
  O  O36  1  0.374  0.808  0.913  1.0
  O  O37  1  0.834  0.822  0.919  1.0
  O  O38  1  0.490  0.006  0.753  1.0
  O  O39  1  0.325  0.329  0.910  1.0
[/CIF]
.