The material described by U4Tc7Si6 crystallizes in the cubic Im-3m space group. U(1) is bonded to six equivalent Tc(1) and six equivalent Si(1) atoms to form USi6Tc6 cuboctahedra that share corners with twelve equivalent U(1)Si6Tc6 cuboctahedra, edges with twelve equivalent Tc(1)U4Si4Tc4 cuboctahedra, faces with six equivalent U(1)Si6Tc6 cuboctahedra, faces with six equivalent Tc(1)U4Si4Tc4 cuboctahedra, and faces with two equivalent Tc(2)Si6 octahedra. There are two inequivalent Tc sites. In the first Tc site, Tc(1) is bonded to four equivalent U(1), four equivalent Tc(1), and four equivalent Si(1) atoms to form distorted TcU4Si4Tc4 cuboctahedra that share corners with four equivalent Tc(1)U4Si4Tc4 cuboctahedra, corners with four equivalent Tc(2)Si6 octahedra, edges with eight equivalent U(1)Si6Tc6 cuboctahedra, edges with eight equivalent Tc(1)U4Si4Tc4 cuboctahedra, faces with four equivalent U(1)Si6Tc6 cuboctahedra, and faces with six equivalent Tc(1)U4Si4Tc4 cuboctahedra. The corner-sharing octahedral tilt angles are 53°. In the second Tc site, Tc(2) is bonded to six equivalent Si(1) atoms to form TcSi6 octahedra that share corners with twenty-four equivalent Tc(1)U4Si4Tc4 cuboctahedra and faces with eight equivalent U(1)Si6Tc6 cuboctahedra. Si(1) is bonded in a 9-coordinate geometry to four equivalent U(1), one Tc(2), and four equivalent Tc(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_U4Si6Tc7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.100
_cell_length_b   7.100
_cell_length_c   7.100
_cell_angle_alpha   109.472
_cell_angle_beta   109.471
_cell_angle_gamma   109.471
_symmetry_Int_Tables_number   1
_cell_volume   275.520
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  U  U0  1  0.000  0.000  0.500  1.0
  U  U1  1  0.000  0.500  0.000  1.0
  U  U2  1  0.500  0.000  0.000  1.0
  U  U3  1  0.500  0.500  0.500  1.0
  Si  Si4  1  0.000  0.688  0.688  1.0
  Si  Si5  1  0.312  0.312  0.000  1.0
  Si  Si6  1  0.688  0.688  1.000  1.0
  Si  Si7  1  0.688  1.000  0.688  1.0
  Si  Si8  1  0.312  0.000  0.312  1.0
  Si  Si9  1  0.000  0.312  0.312  1.0
  Tc  Tc10  1  0.750  0.500  0.250  1.0
  Tc  Tc11  1  0.750  0.250  0.500  1.0
  Tc  Tc12  1  0.250  0.750  0.500  1.0
  Tc  Tc13  1  0.500  0.250  0.750  1.0
  Tc  Tc14  1  0.000  0.000  0.000  1.0
  Tc  Tc15  1  0.250  0.500  0.750  1.0
  Tc  Tc16  1  0.500  0.750  0.250  1.0
[/CIF]
.
The material described by U4Tc7Si6 crystallizes in the cubic Im-3m space group. U(1) is bonded to six equivalent Tc(1) and six equivalent Si(1) atoms to form USi6Tc6 cuboctahedra that share corners with twelve equivalent U(1)Si6Tc6 cuboctahedra, edges with twelve equivalent Tc(1)U4Si4Tc4 cuboctahedra, faces with six equivalent U(1)Si6Tc6 cuboctahedra, faces with six equivalent Tc(1)U4Si4Tc4 cuboctahedra, and faces with two equivalent Tc(2)Si6 octahedra. There are two inequivalent Tc sites. In the first Tc site, Tc(1) is bonded to four equivalent U(1), four equivalent Tc(1), and four equivalent Si(1) atoms to form distorted TcU4Si4Tc4 cuboctahedra that share corners with four equivalent Tc(1)U4Si4Tc4 cuboctahedra, corners with four equivalent Tc(2)Si6 octahedra, edges with eight equivalent U(1)Si6Tc6 cuboctahedra, edges with eight equivalent Tc(1)U4Si4Tc4 cuboctahedra, faces with four equivalent U(1)Si6Tc6 cuboctahedra, and faces with six equivalent Tc(1)U4Si4Tc4 cuboctahedra. The corner-sharing octahedral tilt angles are 53°. In the second Tc site, Tc(2) is bonded to six equivalent Si(1) atoms to form TcSi6 octahedra that share corners with twenty-four equivalent Tc(1)U4Si4Tc4 cuboctahedra and faces with eight equivalent U(1)Si6Tc6 cuboctahedra. Si(1) is bonded in a 9-coordinate geometry to four equivalent U(1), one Tc(2), and four equivalent Tc(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_U4Si6Tc7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.100
_cell_length_b   7.100
_cell_length_c   7.100
_cell_angle_alpha   109.472
_cell_angle_beta   109.471
_cell_angle_gamma   109.471
_symmetry_Int_Tables_number   1
_cell_volume   275.520
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  U  U0  1  0.000  0.000  0.500  1.0
  U  U1  1  0.000  0.500  0.000  1.0
  U  U2  1  0.500  0.000  0.000  1.0
  U  U3  1  0.500  0.500  0.500  1.0
  Si  Si4  1  0.000  0.688  0.688  1.0
  Si  Si5  1  0.312  0.312  0.000  1.0
  Si  Si6  1  0.688  0.688  1.000  1.0
  Si  Si7  1  0.688  1.000  0.688  1.0
  Si  Si8  1  0.312  0.000  0.312  1.0
  Si  Si9  1  0.000  0.312  0.312  1.0
  Tc  Tc10  1  0.750  0.500  0.250  1.0
  Tc  Tc11  1  0.750  0.250  0.500  1.0
  Tc  Tc12  1  0.250  0.750  0.500  1.0
  Tc  Tc13  1  0.500  0.250  0.750  1.0
  Tc  Tc14  1  0.000  0.000  0.000  1.0
  Tc  Tc15  1  0.250  0.500  0.750  1.0
  Tc  Tc16  1  0.500  0.750  0.250  1.0
[/CIF]
.