The material described by Pr6Si4S17 crystallizes in the triclinic P-1 space group. There are six inequivalent Pr sites. In the first Pr site, Pr(1) is bonded in a 8-coordinate geometry to one S(10), one S(11), one S(15), one S(16), one S(4), one S(6), one S(7), and one S(8) atom. In the second Pr site, Pr(2) is bonded in a 8-coordinate geometry to one S(10), one S(12), one S(13), one S(14), one S(17), one S(3), one S(6), and one S(7) atom. In the third Pr site, Pr(3) is bonded in a 8-coordinate geometry to one S(1), one S(14), one S(15), one S(6), two equivalent S(17), and two equivalent S(2) atoms. In the fourth Pr site, Pr(4) is bonded in a 7-coordinate geometry to one S(1), one S(13), one S(14), one S(16), one S(4), one S(5), and one S(9) atom. In the fifth Pr site, Pr(5) is bonded in a 9-coordinate geometry to one S(11), one S(13), one S(4), one S(5), one S(8), two equivalent S(7), and two equivalent S(9) atoms. In the sixth Pr site, Pr(6) is bonded in a 9-coordinate geometry to one S(1), one S(11), one S(13), one S(15), one S(2), one S(3), one S(5), and two equivalent S(12) atoms. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded in a tetrahedral geometry to one S(15), one S(17), one S(3), and one S(6) atom. In the second Si site, Si(2) is bonded in a tetrahedral geometry to one S(10), one S(4), one S(7), and one S(8) atom. In the third Si site, Si(3) is bonded in a tetrahedral geometry to one S(11), one S(16), one S(5), and one S(9) atom. In the fourth Si site, Si(4) is bonded in a tetrahedral geometry to one S(1), one S(12), one S(14), and one S(2) atom. There are seventeen inequivalent S sites. In the first S site, S(1) is bonded to one Pr(3), one Pr(4), one Pr(6), and one Si(4) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(12)Pr3Si trigonal pyramid,  a cornercorner with one S(4)Pr3Si trigonal pyramid,  a cornercorner with one S(6)Pr3Si trigonal pyramid, corners with two equivalent S(15)Pr3Si trigonal pyramids, corners with two equivalent S(2)Pr3Si trigonal pyramids,  an edgeedge with one S(13)Pr4 tetrahedra,  an edgeedge with one S(12)Pr3Si trigonal pyramid, and  an edgeedge with one S(2)Pr3Si trigonal pyramid. In the second S site, S(2) is bonded to one Pr(6), two equivalent Pr(3), and one Si(4) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(13)Pr4 tetrahedra,  a cornercorner with one S(12)Pr3Si trigonal pyramid,  a cornercorner with one S(15)Pr3Si trigonal pyramid, corners with two equivalent S(1)Pr3Si trigonal pyramids, corners with two equivalent S(6)Pr3Si trigonal pyramids,  an edgeedge with one S(1)Pr3Si trigonal pyramid,  an edgeedge with one S(12)Pr3Si trigonal pyramid,  an edgeedge with one S(15)Pr3Si trigonal pyramid, and  an edgeedge with one S(2)Pr3Si trigonal pyramid. In the third S site, S(3) is bonded in a distorted T-shaped geometry to one Pr(2), one Pr(6), and one Si(1) atom. In the fourth S site, S(4) is bonded to one Pr(1), one Pr(4), one Pr(5), and one Si(2) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(1)Pr3Si trigonal pyramid,  a cornercorner with one S(15)Pr3Si trigonal pyramid,  a cornercorner with one S(6)Pr3Si trigonal pyramid, and  an edgeedge with one S(13)Pr4 tetrahedra. In the fifth S site, S(5) is bonded in a 4-coordinate geometry to one Pr(4), one Pr(5), one Pr(6), and one Si(3) atom. In the sixth S site, S(6) is bonded to one Pr(1), one Pr(2), one Pr(3), and one Si(1) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(13)Pr4 tetrahedra,  a cornercorner with one S(1)Pr3Si trigonal pyramid,  a cornercorner with one S(12)Pr3Si trigonal pyramid,  a cornercorner with one S(15)Pr3Si trigonal pyramid,  a cornercorner with one S(4)Pr3Si trigonal pyramid, corners with two equivalent S(2)Pr3Si trigonal pyramids, and  an edgeedge with one S(15)Pr3Si trigonal pyramid. In the seventh S site, S(7) is bonded in a 5-coordinate geometry to one Pr(1), one Pr(2), two equivalent Pr(5), and one Si(2) atom. In the eighth S site, S(8) is bonded in a distorted T-shaped geometry to one Pr(1), one Pr(5), and one Si(2) atom. In the ninth S site, S(9) is bonded in a distorted rectangular see-saw-like geometry to one Pr(4), two equivalent Pr(5), and one Si(3) atom. In the tenth S site, S(10) is bonded in a distorted T-shaped geometry to one Pr(1), one Pr(2), and one Si(2) atom. In the eleventh S site, S(11) is bonded in a distorted rectangular see-saw-like geometry to one Pr(1), one Pr(5), one Pr(6), and one Si(3) atom. In the twelfth S site, S(12) is bonded to one Pr(2), two equivalent Pr(6), and one Si(4) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(13)Pr4 tetrahedra,  a cornercorner with one S(1)Pr3Si trigonal pyramid,  a cornercorner with one S(2)Pr3Si trigonal pyramid,  a cornercorner with one S(6)Pr3Si trigonal pyramid, corners with two equivalent S(15)Pr3Si trigonal pyramids,  an edgeedge with one S(13)Pr4 tetrahedra,  an edgeedge with one S(1)Pr3Si trigonal pyramid,  an edgeedge with one S(12)Pr3Si trigonal pyramid, and  an edgeedge with one S(2)Pr3Si trigonal pyramid. In the thirteenth S site, S(13) is bonded to one Pr(2), one Pr(4), one Pr(5), and one Pr(6) atom to form a mixture of corner and edge-sharing SPr4 tetrahedra. In the fourteenth S site, S(14) is bonded in a distorted rectangular see-saw-like geometry to one Pr(2), one Pr(3), one Pr(4), and one Si(4) atom. In the fifteenth S site, S(15) is bonded to one Pr(1), one Pr(3), one Pr(6), and one Si(1) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(13)Pr4 tetrahedra,  a cornercorner with one S(2)Pr3Si trigonal pyramid,  a cornercorner with one S(4)Pr3Si trigonal pyramid,  a cornercorner with one S(6)Pr3Si trigonal pyramid, corners with two equivalent S(1)Pr3Si trigonal pyramids, corners with two equivalent S(12)Pr3Si trigonal pyramids,  an edgeedge with one S(2)Pr3Si trigonal pyramid, and  an edgeedge with one S(6)Pr3Si trigonal pyramid. In the sixteenth S site, S(16) is bonded in a distorted T-shaped geometry to one Pr(1), one Pr(4), and one Si(3) atom. In the seventeenth S site, S(17) is bonded in a distorted rectangular see-saw-like geometry to one Pr(2), two equivalent Pr(3), and one Si(1) atom. is represented by the CIF file [CIF]
data_Pr6Si4S17
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.011
_cell_length_b   10.052
_cell_length_c   14.340
_cell_angle_alpha   81.983
_cell_angle_beta   86.881
_cell_angle_gamma   89.405
_symmetry_Int_Tables_number   1
_cell_volume   1284.226
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Pr  Pr0  1  0.669  0.588  0.658  1.0
  Pr  Pr1  1  0.107  0.385  0.817  1.0
  Pr  Pr2  1  0.552  0.261  0.999  1.0
  Pr  Pr3  1  0.629  0.934  0.325  1.0
  Pr  Pr4  1  0.893  0.615  0.183  1.0
  Pr  Pr5  1  0.980  0.231  0.540  1.0
  Pr  Pr6  1  0.083  0.080  0.166  1.0
  Pr  Pr7  1  0.917  0.920  0.834  1.0
  Pr  Pr8  1  0.371  0.066  0.675  1.0
  Pr  Pr9  1  0.448  0.739  0.001  1.0
  Pr  Pr10  1  0.331  0.412  0.342  1.0
  Pr  Pr11  1  0.020  0.769  0.460  1.0
  Si  Si12  1  0.769  0.562  0.901  1.0
  Si  Si13  1  0.751  0.500  0.416  1.0
  Si  Si14  1  0.726  0.942  0.606  1.0
  Si  Si15  1  0.251  0.060  0.923  1.0
  Si  Si16  1  0.749  0.940  0.077  1.0
  Si  Si17  1  0.274  0.058  0.394  1.0
  Si  Si18  1  0.249  0.500  0.584  1.0
  Si  Si19  1  0.231  0.438  0.099  1.0
  S  S20  1  0.742  0.113  0.148  1.0
  S  S21  1  0.340  0.001  0.056  1.0
  S  S22  1  0.990  0.627  0.886  1.0
  S  S23  1  0.704  0.691  0.459  1.0
  S  S24  1  0.300  0.912  0.304  1.0
  S  S25  1  0.700  0.088  0.696  1.0
  S  S26  1  0.247  0.613  0.167  1.0
  S  S27  1  0.016  0.494  0.623  1.0
  S  S28  1  0.308  0.633  0.462  1.0
  S  S29  1  0.815  0.019  0.468  1.0
  S  S30  1  0.645  0.470  0.294  1.0
  S  S31  1  0.107  0.200  0.346  1.0
  S  S32  1  0.043  0.148  0.952  1.0
  S  S33  1  0.258  0.887  0.852  1.0
  S  S34  1  0.931  0.856  0.278  1.0
  S  S35  1  0.383  0.212  0.839  1.0
  S  S36  1  0.957  0.852  0.048  1.0
  S  S37  1  0.634  0.716  0.834  1.0
  S  S38  1  0.660  0.999  0.944  1.0
  S  S39  1  0.753  0.387  0.833  1.0
  S  S40  1  0.893  0.800  0.654  1.0
  S  S41  1  0.296  0.309  0.541  1.0
  S  S42  1  0.355  0.530  0.706  1.0
  S  S43  1  0.185  0.981  0.532  1.0
  S  S44  1  0.692  0.367  0.538  1.0
  S  S45  1  0.617  0.788  0.161  1.0
  S  S46  1  0.984  0.506  0.377  1.0
  S  S47  1  0.069  0.144  0.722  1.0
  S  S48  1  0.519  0.847  0.603  1.0
  S  S49  1  0.366  0.284  0.166  1.0
  S  S50  1  0.679  0.519  0.043  1.0
  S  S51  1  0.321  0.481  0.957  1.0
  S  S52  1  0.010  0.373  0.114  1.0
  S  S53  1  0.481  0.153  0.397  1.0
[/CIF]
.
The material described by Pr6Si4S17 crystallizes in the triclinic P-1 space group. There are six inequivalent Pr sites. In the first Pr site, Pr(1) is bonded in a 8-coordinate geometry to one S(10), one S(11), one S(15), one S(16), one S(4), one S(6), one S(7), and one S(8) atom. In the second Pr site, Pr(2) is bonded in a 8-coordinate geometry to one S(10), one S(12), one S(13), one S(14), one S(17), one S(3), one S(6), and one S(7) atom. In the third Pr site, Pr(3) is bonded in a 8-coordinate geometry to one S(1), one S(14), one S(15), one S(6), two equivalent S(17), and two equivalent S(2) atoms. In the fourth Pr site, Pr(4) is bonded in a 7-coordinate geometry to one S(1), one S(13), one S(14), one S(16), one S(4), one S(5), and one S(9) atom. In the fifth Pr site, Pr(5) is bonded in a 9-coordinate geometry to one S(11), one S(13), one S(4), one S(5), one S(8), two equivalent S(7), and two equivalent S(9) atoms. In the sixth Pr site, Pr(6) is bonded in a 9-coordinate geometry to one S(1), one S(11), one S(13), one S(15), one S(2), one S(3), one S(5), and two equivalent S(12) atoms. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded in a tetrahedral geometry to one S(15), one S(17), one S(3), and one S(6) atom. In the second Si site, Si(2) is bonded in a tetrahedral geometry to one S(10), one S(4), one S(7), and one S(8) atom. In the third Si site, Si(3) is bonded in a tetrahedral geometry to one S(11), one S(16), one S(5), and one S(9) atom. In the fourth Si site, Si(4) is bonded in a tetrahedral geometry to one S(1), one S(12), one S(14), and one S(2) atom. There are seventeen inequivalent S sites. In the first S site, S(1) is bonded to one Pr(3), one Pr(4), one Pr(6), and one Si(4) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(12)Pr3Si trigonal pyramid,  a cornercorner with one S(4)Pr3Si trigonal pyramid,  a cornercorner with one S(6)Pr3Si trigonal pyramid, corners with two equivalent S(15)Pr3Si trigonal pyramids, corners with two equivalent S(2)Pr3Si trigonal pyramids,  an edgeedge with one S(13)Pr4 tetrahedra,  an edgeedge with one S(12)Pr3Si trigonal pyramid, and  an edgeedge with one S(2)Pr3Si trigonal pyramid. In the second S site, S(2) is bonded to one Pr(6), two equivalent Pr(3), and one Si(4) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(13)Pr4 tetrahedra,  a cornercorner with one S(12)Pr3Si trigonal pyramid,  a cornercorner with one S(15)Pr3Si trigonal pyramid, corners with two equivalent S(1)Pr3Si trigonal pyramids, corners with two equivalent S(6)Pr3Si trigonal pyramids,  an edgeedge with one S(1)Pr3Si trigonal pyramid,  an edgeedge with one S(12)Pr3Si trigonal pyramid,  an edgeedge with one S(15)Pr3Si trigonal pyramid, and  an edgeedge with one S(2)Pr3Si trigonal pyramid. In the third S site, S(3) is bonded in a distorted T-shaped geometry to one Pr(2), one Pr(6), and one Si(1) atom. In the fourth S site, S(4) is bonded to one Pr(1), one Pr(4), one Pr(5), and one Si(2) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(1)Pr3Si trigonal pyramid,  a cornercorner with one S(15)Pr3Si trigonal pyramid,  a cornercorner with one S(6)Pr3Si trigonal pyramid, and  an edgeedge with one S(13)Pr4 tetrahedra. In the fifth S site, S(5) is bonded in a 4-coordinate geometry to one Pr(4), one Pr(5), one Pr(6), and one Si(3) atom. In the sixth S site, S(6) is bonded to one Pr(1), one Pr(2), one Pr(3), and one Si(1) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(13)Pr4 tetrahedra,  a cornercorner with one S(1)Pr3Si trigonal pyramid,  a cornercorner with one S(12)Pr3Si trigonal pyramid,  a cornercorner with one S(15)Pr3Si trigonal pyramid,  a cornercorner with one S(4)Pr3Si trigonal pyramid, corners with two equivalent S(2)Pr3Si trigonal pyramids, and  an edgeedge with one S(15)Pr3Si trigonal pyramid. In the seventh S site, S(7) is bonded in a 5-coordinate geometry to one Pr(1), one Pr(2), two equivalent Pr(5), and one Si(2) atom. In the eighth S site, S(8) is bonded in a distorted T-shaped geometry to one Pr(1), one Pr(5), and one Si(2) atom. In the ninth S site, S(9) is bonded in a distorted rectangular see-saw-like geometry to one Pr(4), two equivalent Pr(5), and one Si(3) atom. In the tenth S site, S(10) is bonded in a distorted T-shaped geometry to one Pr(1), one Pr(2), and one Si(2) atom. In the eleventh S site, S(11) is bonded in a distorted rectangular see-saw-like geometry to one Pr(1), one Pr(5), one Pr(6), and one Si(3) atom. In the twelfth S site, S(12) is bonded to one Pr(2), two equivalent Pr(6), and one Si(4) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(13)Pr4 tetrahedra,  a cornercorner with one S(1)Pr3Si trigonal pyramid,  a cornercorner with one S(2)Pr3Si trigonal pyramid,  a cornercorner with one S(6)Pr3Si trigonal pyramid, corners with two equivalent S(15)Pr3Si trigonal pyramids,  an edgeedge with one S(13)Pr4 tetrahedra,  an edgeedge with one S(1)Pr3Si trigonal pyramid,  an edgeedge with one S(12)Pr3Si trigonal pyramid, and  an edgeedge with one S(2)Pr3Si trigonal pyramid. In the thirteenth S site, S(13) is bonded to one Pr(2), one Pr(4), one Pr(5), and one Pr(6) atom to form a mixture of corner and edge-sharing SPr4 tetrahedra. In the fourteenth S site, S(14) is bonded in a distorted rectangular see-saw-like geometry to one Pr(2), one Pr(3), one Pr(4), and one Si(4) atom. In the fifteenth S site, S(15) is bonded to one Pr(1), one Pr(3), one Pr(6), and one Si(1) atom to form distorted SPr3Si trigonal pyramids that share  a cornercorner with one S(13)Pr4 tetrahedra,  a cornercorner with one S(2)Pr3Si trigonal pyramid,  a cornercorner with one S(4)Pr3Si trigonal pyramid,  a cornercorner with one S(6)Pr3Si trigonal pyramid, corners with two equivalent S(1)Pr3Si trigonal pyramids, corners with two equivalent S(12)Pr3Si trigonal pyramids,  an edgeedge with one S(2)Pr3Si trigonal pyramid, and  an edgeedge with one S(6)Pr3Si trigonal pyramid. In the sixteenth S site, S(16) is bonded in a distorted T-shaped geometry to one Pr(1), one Pr(4), and one Si(3) atom. In the seventeenth S site, S(17) is bonded in a distorted rectangular see-saw-like geometry to one Pr(2), two equivalent Pr(3), and one Si(1) atom. is represented by the CIF file [CIF]
data_Pr6Si4S17
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.011
_cell_length_b   10.052
_cell_length_c   14.340
_cell_angle_alpha   81.983
_cell_angle_beta   86.881
_cell_angle_gamma   89.405
_symmetry_Int_Tables_number   1
_cell_volume   1284.226
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Pr  Pr0  1  0.669  0.588  0.658  1.0
  Pr  Pr1  1  0.107  0.385  0.817  1.0
  Pr  Pr2  1  0.552  0.261  0.999  1.0
  Pr  Pr3  1  0.629  0.934  0.325  1.0
  Pr  Pr4  1  0.893  0.615  0.183  1.0
  Pr  Pr5  1  0.980  0.231  0.540  1.0
  Pr  Pr6  1  0.083  0.080  0.166  1.0
  Pr  Pr7  1  0.917  0.920  0.834  1.0
  Pr  Pr8  1  0.371  0.066  0.675  1.0
  Pr  Pr9  1  0.448  0.739  0.001  1.0
  Pr  Pr10  1  0.331  0.412  0.342  1.0
  Pr  Pr11  1  0.020  0.769  0.460  1.0
  Si  Si12  1  0.769  0.562  0.901  1.0
  Si  Si13  1  0.751  0.500  0.416  1.0
  Si  Si14  1  0.726  0.942  0.606  1.0
  Si  Si15  1  0.251  0.060  0.923  1.0
  Si  Si16  1  0.749  0.940  0.077  1.0
  Si  Si17  1  0.274  0.058  0.394  1.0
  Si  Si18  1  0.249  0.500  0.584  1.0
  Si  Si19  1  0.231  0.438  0.099  1.0
  S  S20  1  0.742  0.113  0.148  1.0
  S  S21  1  0.340  0.001  0.056  1.0
  S  S22  1  0.990  0.627  0.886  1.0
  S  S23  1  0.704  0.691  0.459  1.0
  S  S24  1  0.300  0.912  0.304  1.0
  S  S25  1  0.700  0.088  0.696  1.0
  S  S26  1  0.247  0.613  0.167  1.0
  S  S27  1  0.016  0.494  0.623  1.0
  S  S28  1  0.308  0.633  0.462  1.0
  S  S29  1  0.815  0.019  0.468  1.0
  S  S30  1  0.645  0.470  0.294  1.0
  S  S31  1  0.107  0.200  0.346  1.0
  S  S32  1  0.043  0.148  0.952  1.0
  S  S33  1  0.258  0.887  0.852  1.0
  S  S34  1  0.931  0.856  0.278  1.0
  S  S35  1  0.383  0.212  0.839  1.0
  S  S36  1  0.957  0.852  0.048  1.0
  S  S37  1  0.634  0.716  0.834  1.0
  S  S38  1  0.660  0.999  0.944  1.0
  S  S39  1  0.753  0.387  0.833  1.0
  S  S40  1  0.893  0.800  0.654  1.0
  S  S41  1  0.296  0.309  0.541  1.0
  S  S42  1  0.355  0.530  0.706  1.0
  S  S43  1  0.185  0.981  0.532  1.0
  S  S44  1  0.692  0.367  0.538  1.0
  S  S45  1  0.617  0.788  0.161  1.0
  S  S46  1  0.984  0.506  0.377  1.0
  S  S47  1  0.069  0.144  0.722  1.0
  S  S48  1  0.519  0.847  0.603  1.0
  S  S49  1  0.366  0.284  0.166  1.0
  S  S50  1  0.679  0.519  0.043  1.0
  S  S51  1  0.321  0.481  0.957  1.0
  S  S52  1  0.010  0.373  0.114  1.0
  S  S53  1  0.481  0.153  0.397  1.0
[/CIF]
.