The structure described by GaOOH crystallizes in the orthorhombic Fdd2 space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(2) and four equivalent O(1) atoms to form a mixture of distorted corner and edge-sharing GaO6 pentagonal pyramids. In the second Ga site, Ga(2) is bonded to two equivalent O(2) and four equivalent O(1) atoms to form a mixture of distorted corner and edge-sharing GaO6 pentagonal pyramids. H(1) is bonded in a single-bond geometry to one O(2) atom. There are two inequivalent O sites. In the first O site, O(1) is bonded to two equivalent Ga(1) and two equivalent Ga(2) atoms to form a mixture of corner and edge-sharing OGa4 tetrahedra. In the second O site, O(2) is bonded in a distorted single-bond geometry to one Ga(1), one Ga(2), and one H(1) atom. is represented by the CIF file [CIF]
data_GaHO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.201
_cell_length_b   6.010
_cell_length_c   5.248
_cell_angle_alpha   66.453
_cell_angle_beta   62.668
_cell_angle_gamma   50.879
_symmetry_Int_Tables_number   1
_cell_volume   133.079
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.314  0.686  0.314  1.0
  Ga  Ga1  1  0.917  0.083  0.917  1.0
  Ga  Ga2  1  0.167  0.333  0.167  1.0
  Ga  Ga3  1  0.564  0.936  0.564  1.0
  H  H4  1  0.758  0.323  0.423  1.0
  H  H5  1  0.927  0.492  0.754  1.0
  H  H6  1  0.423  0.496  0.758  1.0
  H  H7  1  0.754  0.827  0.927  1.0
  O  O8  1  0.252  0.017  0.978  1.0
  O  O9  1  0.978  0.752  0.252  1.0
  O  O10  1  0.233  0.998  0.498  1.0
  O  O11  1  0.498  0.272  0.233  1.0
  O  O12  1  0.746  0.483  0.264  1.0
  O  O13  1  0.767  0.504  0.742  1.0
  O  O14  1  0.264  0.508  0.746  1.0
  O  O15  1  0.742  0.986  0.767  1.0
[/CIF]
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The structure described by GaOOH crystallizes in the orthorhombic Fdd2 space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(2) and four equivalent O(1) atoms to form a mixture of distorted corner and edge-sharing GaO6 pentagonal pyramids. In the second Ga site, Ga(2) is bonded to two equivalent O(2) and four equivalent O(1) atoms to form a mixture of distorted corner and edge-sharing GaO6 pentagonal pyramids. H(1) is bonded in a single-bond geometry to one O(2) atom. There are two inequivalent O sites. In the first O site, O(1) is bonded to two equivalent Ga(1) and two equivalent Ga(2) atoms to form a mixture of corner and edge-sharing OGa4 tetrahedra. In the second O site, O(2) is bonded in a distorted single-bond geometry to one Ga(1), one Ga(2), and one H(1) atom. is represented by the CIF file [CIF]
data_GaHO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.201
_cell_length_b   6.010
_cell_length_c   5.248
_cell_angle_alpha   66.453
_cell_angle_beta   62.668
_cell_angle_gamma   50.879
_symmetry_Int_Tables_number   1
_cell_volume   133.079
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.314  0.686  0.314  1.0
  Ga  Ga1  1  0.917  0.083  0.917  1.0
  Ga  Ga2  1  0.167  0.333  0.167  1.0
  Ga  Ga3  1  0.564  0.936  0.564  1.0
  H  H4  1  0.758  0.323  0.423  1.0
  H  H5  1  0.927  0.492  0.754  1.0
  H  H6  1  0.423  0.496  0.758  1.0
  H  H7  1  0.754  0.827  0.927  1.0
  O  O8  1  0.252  0.017  0.978  1.0
  O  O9  1  0.978  0.752  0.252  1.0
  O  O10  1  0.233  0.998  0.498  1.0
  O  O11  1  0.498  0.272  0.233  1.0
  O  O12  1  0.746  0.483  0.264  1.0
  O  O13  1  0.767  0.504  0.742  1.0
  O  O14  1  0.264  0.508  0.746  1.0
  O  O15  1  0.742  0.986  0.767  1.0
[/CIF]
.