The compound described by Ga3NO3 is Spinel-like structured and crystallizes in the monoclinic C2/m space group. There are seven inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent N(1) and four equivalent O(1) atoms to form GaN2O4 octahedra that share corners with two equivalent Ga(6)N2O2 tetrahedra, corners with four equivalent Ga(2)O4 tetrahedra, edges with two equivalent Ga(4)NO5 octahedra, and edges with four equivalent Ga(3)N2O4 octahedra. In the second Ga site, Ga(2) is bonded to one O(2), one O(4), and two equivalent O(1) atoms to form GaO4 tetrahedra that share  a cornercorner with one Ga(7)O6 octahedra, corners with two equivalent Ga(1)N2O4 octahedra, corners with two equivalent Ga(5)N2O4 octahedra, corners with three equivalent Ga(4)NO5 octahedra, and corners with four equivalent Ga(3)N2O4 octahedra. The corner-sharing octahedral tilt angles range from 54-58°. In the third Ga site, Ga(3) is bonded to two equivalent N(1), two equivalent O(1), and two equivalent O(2) atoms to form GaN2O4 octahedra that share corners with two equivalent Ga(6)N2O2 tetrahedra, corners with four equivalent Ga(2)O4 tetrahedra, edges with two equivalent Ga(1)N2O4 octahedra, edges with two equivalent Ga(3)N2O4 octahedra, and edges with two equivalent Ga(4)NO5 octahedra. In the fourth Ga site, Ga(4) is bonded to one N(2), one O(2), two equivalent O(1), and two equivalent O(3) atoms to form GaNO5 octahedra that share corners with three equivalent Ga(6)N2O2 tetrahedra, corners with three equivalent Ga(2)O4 tetrahedra,  an edgeedge with one Ga(1)N2O4 octahedra,  an edgeedge with one Ga(7)O6 octahedra, edges with two equivalent Ga(3)N2O4 octahedra, and edges with two equivalent Ga(5)N2O4 octahedra. In the fifth Ga site, Ga(5) is bonded to two equivalent N(2), two equivalent O(3), and two equivalent O(4) atoms to form GaN2O4 octahedra that share corners with two equivalent Ga(2)O4 tetrahedra, corners with four equivalent Ga(6)N2O2 tetrahedra, edges with two equivalent Ga(5)N2O4 octahedra, edges with two equivalent Ga(4)NO5 octahedra, and edges with two equivalent Ga(7)O6 octahedra. In the sixth Ga site, Ga(6) is bonded to one N(1), one N(2), and two equivalent O(3) atoms to form GaN2O2 tetrahedra that share  a cornercorner with one Ga(1)N2O4 octahedra, corners with two equivalent Ga(3)N2O4 octahedra, corners with two equivalent Ga(7)O6 octahedra, corners with three equivalent Ga(4)NO5 octahedra, and corners with four equivalent Ga(5)N2O4 octahedra. The corner-sharing octahedral tilt angles range from 54-64°. In the seventh Ga site, Ga(7) is bonded to two equivalent O(4) and four equivalent O(3) atoms to form GaO6 octahedra that share corners with two equivalent Ga(2)O4 tetrahedra, corners with four equivalent Ga(6)N2O2 tetrahedra, edges with two equivalent Ga(4)NO5 octahedra, and edges with four equivalent Ga(5)N2O4 octahedra. There are two inequivalent N sites. In the first N site, N(1) is bonded to one Ga(1), one Ga(6), and two equivalent Ga(3) atoms to form distorted corner-sharing NGa4 tetrahedra. In the second N site, N(2) is bonded in a distorted rectangular see-saw-like geometry to one Ga(4), one Ga(6), and two equivalent Ga(5) atoms. There are four inequivalent O sites. In the first O site, O(1) is bonded in a rectangular see-saw-like geometry to one Ga(1), one Ga(2), one Ga(3), and one Ga(4) atom. In the second O site, O(2) is bonded in a rectangular see-saw-like geometry to one Ga(2), one Ga(4), and two equivalent Ga(3) atoms. In the third O site, O(3) is bonded in a rectangular see-saw-like geometry to one Ga(4), one Ga(5), one Ga(6), and one Ga(7) atom. In the fourth O site, O(4) is bonded in a rectangular see-saw-like geometry to one Ga(2), one Ga(7), and two equivalent Ga(5) atoms. is represented by the CIF card [CIF]
data_Ga3NO3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.954
_cell_length_b   5.954
_cell_length_c   10.354
_cell_angle_alpha   72.959
_cell_angle_beta   72.959
_cell_angle_gamma   59.591
_symmetry_Int_Tables_number   1
_cell_volume   297.984
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.500  0.000  1.0
  Ga  Ga1  1  0.061  0.061  0.809  1.0
  Ga  Ga2  1  0.000  0.500  0.000  1.0
  Ga  Ga3  1  0.251  0.251  0.256  1.0
  Ga  Ga4  1  0.749  0.749  0.744  1.0
  Ga  Ga5  1  0.939  0.939  0.191  1.0
  Ga  Ga6  1  0.000  0.500  0.500  1.0
  Ga  Ga7  1  0.500  0.000  0.000  1.0
  Ga  Ga8  1  0.551  0.551  0.304  1.0
  Ga  Ga9  1  0.500  0.000  0.500  1.0
  Ga  Ga10  1  0.449  0.449  0.696  1.0
  Ga  Ga11  1  0.000  0.000  0.500  1.0
  N  N12  1  0.369  0.369  0.897  1.0
  N  N13  1  0.353  0.353  0.385  1.0
  N  N14  1  0.631  0.631  0.103  1.0
  N  N15  1  0.647  0.647  0.615  1.0
  O  O16  1  0.874  0.386  0.873  1.0
  O  O17  1  0.386  0.874  0.873  1.0
  O  O18  1  0.126  0.614  0.127  1.0
  O  O19  1  0.866  0.866  0.870  1.0
  O  O20  1  0.884  0.359  0.377  1.0
  O  O21  1  0.614  0.126  0.127  1.0
  O  O22  1  0.876  0.876  0.384  1.0
  O  O23  1  0.134  0.134  0.130  1.0
  O  O24  1  0.359  0.884  0.377  1.0
  O  O25  1  0.124  0.124  0.616  1.0
  O  O26  1  0.116  0.641  0.623  1.0
  O  O27  1  0.641  0.116  0.623  1.0
[/CIF]
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The compound described by Ga3NO3 is Spinel-like structured and crystallizes in the monoclinic C2/m space group. There are seven inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent N(1) and four equivalent O(1) atoms to form GaN2O4 octahedra that share corners with two equivalent Ga(6)N2O2 tetrahedra, corners with four equivalent Ga(2)O4 tetrahedra, edges with two equivalent Ga(4)NO5 octahedra, and edges with four equivalent Ga(3)N2O4 octahedra. In the second Ga site, Ga(2) is bonded to one O(2), one O(4), and two equivalent O(1) atoms to form GaO4 tetrahedra that share  a cornercorner with one Ga(7)O6 octahedra, corners with two equivalent Ga(1)N2O4 octahedra, corners with two equivalent Ga(5)N2O4 octahedra, corners with three equivalent Ga(4)NO5 octahedra, and corners with four equivalent Ga(3)N2O4 octahedra. The corner-sharing octahedral tilt angles range from 54-58°. In the third Ga site, Ga(3) is bonded to two equivalent N(1), two equivalent O(1), and two equivalent O(2) atoms to form GaN2O4 octahedra that share corners with two equivalent Ga(6)N2O2 tetrahedra, corners with four equivalent Ga(2)O4 tetrahedra, edges with two equivalent Ga(1)N2O4 octahedra, edges with two equivalent Ga(3)N2O4 octahedra, and edges with two equivalent Ga(4)NO5 octahedra. In the fourth Ga site, Ga(4) is bonded to one N(2), one O(2), two equivalent O(1), and two equivalent O(3) atoms to form GaNO5 octahedra that share corners with three equivalent Ga(6)N2O2 tetrahedra, corners with three equivalent Ga(2)O4 tetrahedra,  an edgeedge with one Ga(1)N2O4 octahedra,  an edgeedge with one Ga(7)O6 octahedra, edges with two equivalent Ga(3)N2O4 octahedra, and edges with two equivalent Ga(5)N2O4 octahedra. In the fifth Ga site, Ga(5) is bonded to two equivalent N(2), two equivalent O(3), and two equivalent O(4) atoms to form GaN2O4 octahedra that share corners with two equivalent Ga(2)O4 tetrahedra, corners with four equivalent Ga(6)N2O2 tetrahedra, edges with two equivalent Ga(5)N2O4 octahedra, edges with two equivalent Ga(4)NO5 octahedra, and edges with two equivalent Ga(7)O6 octahedra. In the sixth Ga site, Ga(6) is bonded to one N(1), one N(2), and two equivalent O(3) atoms to form GaN2O2 tetrahedra that share  a cornercorner with one Ga(1)N2O4 octahedra, corners with two equivalent Ga(3)N2O4 octahedra, corners with two equivalent Ga(7)O6 octahedra, corners with three equivalent Ga(4)NO5 octahedra, and corners with four equivalent Ga(5)N2O4 octahedra. The corner-sharing octahedral tilt angles range from 54-64°. In the seventh Ga site, Ga(7) is bonded to two equivalent O(4) and four equivalent O(3) atoms to form GaO6 octahedra that share corners with two equivalent Ga(2)O4 tetrahedra, corners with four equivalent Ga(6)N2O2 tetrahedra, edges with two equivalent Ga(4)NO5 octahedra, and edges with four equivalent Ga(5)N2O4 octahedra. There are two inequivalent N sites. In the first N site, N(1) is bonded to one Ga(1), one Ga(6), and two equivalent Ga(3) atoms to form distorted corner-sharing NGa4 tetrahedra. In the second N site, N(2) is bonded in a distorted rectangular see-saw-like geometry to one Ga(4), one Ga(6), and two equivalent Ga(5) atoms. There are four inequivalent O sites. In the first O site, O(1) is bonded in a rectangular see-saw-like geometry to one Ga(1), one Ga(2), one Ga(3), and one Ga(4) atom. In the second O site, O(2) is bonded in a rectangular see-saw-like geometry to one Ga(2), one Ga(4), and two equivalent Ga(3) atoms. In the third O site, O(3) is bonded in a rectangular see-saw-like geometry to one Ga(4), one Ga(5), one Ga(6), and one Ga(7) atom. In the fourth O site, O(4) is bonded in a rectangular see-saw-like geometry to one Ga(2), one Ga(7), and two equivalent Ga(5) atoms. is represented by the CIF card [CIF]
data_Ga3NO3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.954
_cell_length_b   5.954
_cell_length_c   10.354
_cell_angle_alpha   72.959
_cell_angle_beta   72.959
_cell_angle_gamma   59.591
_symmetry_Int_Tables_number   1
_cell_volume   297.984
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.500  0.000  1.0
  Ga  Ga1  1  0.061  0.061  0.809  1.0
  Ga  Ga2  1  0.000  0.500  0.000  1.0
  Ga  Ga3  1  0.251  0.251  0.256  1.0
  Ga  Ga4  1  0.749  0.749  0.744  1.0
  Ga  Ga5  1  0.939  0.939  0.191  1.0
  Ga  Ga6  1  0.000  0.500  0.500  1.0
  Ga  Ga7  1  0.500  0.000  0.000  1.0
  Ga  Ga8  1  0.551  0.551  0.304  1.0
  Ga  Ga9  1  0.500  0.000  0.500  1.0
  Ga  Ga10  1  0.449  0.449  0.696  1.0
  Ga  Ga11  1  0.000  0.000  0.500  1.0
  N  N12  1  0.369  0.369  0.897  1.0
  N  N13  1  0.353  0.353  0.385  1.0
  N  N14  1  0.631  0.631  0.103  1.0
  N  N15  1  0.647  0.647  0.615  1.0
  O  O16  1  0.874  0.386  0.873  1.0
  O  O17  1  0.386  0.874  0.873  1.0
  O  O18  1  0.126  0.614  0.127  1.0
  O  O19  1  0.866  0.866  0.870  1.0
  O  O20  1  0.884  0.359  0.377  1.0
  O  O21  1  0.614  0.126  0.127  1.0
  O  O22  1  0.876  0.876  0.384  1.0
  O  O23  1  0.134  0.134  0.130  1.0
  O  O24  1  0.359  0.884  0.377  1.0
  O  O25  1  0.124  0.124  0.616  1.0
  O  O26  1  0.116  0.641  0.623  1.0
  O  O27  1  0.641  0.116  0.623  1.0
[/CIF]
.