The compound described by Ce6Si4S17 crystallizes in the triclinic P-1 space group. There are six inequivalent Ce sites. In the first Ce site, Ce(1) is bonded in a 8-coordinate geometry to one S(1), one S(14), one S(16), one S(17), one S(2), one S(5), one S(7), and one S(8) atom. In the second Ce site, Ce(2) is bonded in a 9-coordinate geometry to one S(14), one S(17), one S(3), one S(4), one S(7), two equivalent S(16), and two equivalent S(6) atoms. In the third Ce site, Ce(3) is bonded in a 8-coordinate geometry to one S(1), one S(10), one S(11), one S(15), one S(16), one S(4), one S(8), and one S(9) atom. In the fourth Ce site, Ce(4) is bonded to one S(10), one S(12), one S(17), one S(3), one S(4), one S(5), and one S(6) atom to form distorted CeS7 pentagonal bipyramids that share  a cornercorner with one Si(1)S4 tetrahedra,  a cornercorner with one Si(3)S4 tetrahedra,  an edgeedge with one Si(1)S4 tetrahedra, and  an edgeedge with one Si(2)S4 tetrahedra. In the fifth Ce site, Ce(5) is bonded in a 9-coordinate geometry to one S(11), one S(12), one S(13), one S(2), one S(3), one S(4), one S(7), and two equivalent S(9) atoms. In the sixth Ce site, Ce(6) is bonded in a 8-coordinate geometry to one S(1), one S(10), one S(12), one S(2), two equivalent S(13), and two equivalent S(15) atoms. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one S(3), one S(5), one S(6), and one S(7) atom to form SiS4 tetrahedra that share  a cornercorner with one Ce(4)S7 pentagonal bipyramid and  an edgeedge with one Ce(4)S7 pentagonal bipyramid. In the second Si site, Si(2) is bonded to one S(10), one S(12), one S(13), and one S(9) atom to form SiS4 tetrahedra that share  an edgeedge with one Ce(4)S7 pentagonal bipyramid. In the third Si site, Si(3) is bonded to one S(14), one S(16), one S(17), and one S(8) atom to form SiS4 tetrahedra that share  a cornercorner with one Ce(4)S7 pentagonal bipyramid. In the fourth Si site, Si(4) is bonded in a tetrahedral geometry to one S(1), one S(11), one S(15), and one S(2) atom. There are seventeen inequivalent S sites. In the first S site, S(1) is bonded to one Ce(1), one Ce(3), one Ce(6), and one Si(4) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(4)Ce4 tetrahedra,  a cornercorner with one S(12)Ce3Si trigonal pyramid,  a cornercorner with one S(17)Ce3Si trigonal pyramid,  a cornercorner with one S(2)Ce3Si trigonal pyramid,  a cornercorner with one S(9)Ce3Si trigonal pyramid, corners with two equivalent S(13)Ce3Si trigonal pyramids, and  an edgeedge with one S(2)Ce3Si trigonal pyramid. In the second S site, S(2) is bonded to one Ce(1), one Ce(5), one Ce(6), and one Si(4) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(4)Ce4 tetrahedra,  a cornercorner with one S(1)Ce3Si trigonal pyramid,  a cornercorner with one S(13)Ce3Si trigonal pyramid,  a cornercorner with one S(17)Ce3Si trigonal pyramid, corners with two equivalent S(12)Ce3Si trigonal pyramids, corners with two equivalent S(9)Ce3Si trigonal pyramids,  an edgeedge with one S(1)Ce3Si trigonal pyramid, and  an edgeedge with one S(13)Ce3Si trigonal pyramid. In the third S site, S(3) is bonded in a 4-coordinate geometry to one Ce(2), one Ce(4), one Ce(5), and one Si(1) atom. In the fourth S site, S(4) is bonded to one Ce(2), one Ce(3), one Ce(4), and one Ce(5) atom to form a mixture of corner and edge-sharing SCe4 tetrahedra. In the fifth S site, S(5) is bonded in a distorted T-shaped geometry to one Ce(1), one Ce(4), and one Si(1) atom. In the sixth S site, S(6) is bonded in a distorted rectangular see-saw-like geometry to one Ce(4), two equivalent Ce(2), and one Si(1) atom. In the seventh S site, S(7) is bonded in a distorted rectangular see-saw-like geometry to one Ce(1), one Ce(2), one Ce(5), and one Si(1) atom. In the eighth S site, S(8) is bonded in a distorted T-shaped geometry to one Ce(1), one Ce(3), and one Si(3) atom. In the ninth S site, S(9) is bonded to one Ce(3), two equivalent Ce(5), and one Si(2) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(4)Ce4 tetrahedra,  a cornercorner with one S(1)Ce3Si trigonal pyramid,  a cornercorner with one S(12)Ce3Si trigonal pyramid,  a cornercorner with one S(13)Ce3Si trigonal pyramid, corners with two equivalent S(2)Ce3Si trigonal pyramids,  an edgeedge with one S(4)Ce4 tetrahedra,  an edgeedge with one S(12)Ce3Si trigonal pyramid,  an edgeedge with one S(13)Ce3Si trigonal pyramid, and  an edgeedge with one S(9)Ce3Si trigonal pyramid. In the tenth S site, S(10) is bonded in a distorted rectangular see-saw-like geometry to one Ce(3), one Ce(4), one Ce(6), and one Si(2) atom. In the eleventh S site, S(11) is bonded in a distorted T-shaped geometry to one Ce(3), one Ce(5), and one Si(4) atom. In the twelfth S site, S(12) is bonded to one Ce(4), one Ce(5), one Ce(6), and one Si(2) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(1)Ce3Si trigonal pyramid,  a cornercorner with one S(17)Ce3Si trigonal pyramid,  a cornercorner with one S(9)Ce3Si trigonal pyramid, corners with two equivalent S(13)Ce3Si trigonal pyramids, corners with two equivalent S(2)Ce3Si trigonal pyramids,  an edgeedge with one S(4)Ce4 tetrahedra,  an edgeedge with one S(13)Ce3Si trigonal pyramid, and  an edgeedge with one S(9)Ce3Si trigonal pyramid. In the thirteenth S site, S(13) is bonded to one Ce(5), two equivalent Ce(6), and one Si(2) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(4)Ce4 tetrahedra,  a cornercorner with one S(2)Ce3Si trigonal pyramid,  a cornercorner with one S(9)Ce3Si trigonal pyramid, corners with two equivalent S(1)Ce3Si trigonal pyramids, corners with two equivalent S(12)Ce3Si trigonal pyramids,  an edgeedge with one S(12)Ce3Si trigonal pyramid,  an edgeedge with one S(13)Ce3Si trigonal pyramid,  an edgeedge with one S(2)Ce3Si trigonal pyramid, and  an edgeedge with one S(9)Ce3Si trigonal pyramid. In the fourteenth S site, S(14) is bonded in a 3-coordinate geometry to one Ce(1), one Ce(2), and one Si(3) atom. In the fifteenth S site, S(15) is bonded in a distorted rectangular see-saw-like geometry to one Ce(3), two equivalent Ce(6), and one Si(4) atom. In the sixteenth S site, S(16) is bonded in a 5-coordinate geometry to one Ce(1), one Ce(3), two equivalent Ce(2), and one Si(3) atom. In the seventeenth S site, S(17) is bonded to one Ce(1), one Ce(2), one Ce(4), and one Si(3) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(1)Ce3Si trigonal pyramid,  a cornercorner with one S(12)Ce3Si trigonal pyramid,  a cornercorner with one S(2)Ce3Si trigonal pyramid, and  an edgeedge with one S(4)Ce4 tetrahedra. is represented by the CIF file [CIF]
data_Ce6Si4S17
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.011
_cell_length_b   10.066
_cell_length_c   14.336
_cell_angle_alpha   82.269
_cell_angle_beta   86.863
_cell_angle_gamma   89.242
_symmetry_Int_Tables_number   1
_cell_volume   1286.550
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ce  Ce0  1  0.171  0.089  0.658  1.0
  Ce  Ce1  1  0.520  0.268  0.458  1.0
  Ce  Ce2  1  0.606  0.885  0.817  1.0
  Ce  Ce3  1  0.130  0.431  0.326  1.0
  Ce  Ce4  1  0.418  0.421  0.833  1.0
  Ce  Ce5  1  0.949  0.239  0.001  1.0
  Ce  Ce6  1  0.394  0.115  0.183  1.0
  Ce  Ce7  1  0.480  0.732  0.542  1.0
  Ce  Ce8  1  0.870  0.569  0.674  1.0
  Ce  Ce9  1  0.829  0.911  0.342  1.0
  Ce  Ce10  1  0.051  0.761  0.999  1.0
  Ce  Ce11  1  0.582  0.579  0.167  1.0
  Si  Si12  1  0.774  0.558  0.394  1.0
  Si  Si13  1  0.752  0.559  0.923  1.0
  Si  Si14  1  0.251  0.999  0.415  1.0
  Si  Si15  1  0.731  0.938  0.099  1.0
  Si  Si16  1  0.269  0.062  0.901  1.0
  Si  Si17  1  0.226  0.442  0.606  1.0
  Si  Si18  1  0.248  0.441  0.077  1.0
  Si  Si19  1  0.749  0.001  0.585  1.0
  S  S20  1  0.746  0.113  0.167  1.0
  S  S21  1  0.133  0.217  0.833  1.0
  S  S22  1  0.203  0.590  0.695  1.0
  S  S23  1  0.571  0.646  0.721  1.0
  S  S24  1  0.018  0.347  0.603  1.0
  S  S25  1  0.317  0.519  0.467  1.0
  S  S26  1  0.394  0.299  0.654  1.0
  S  S27  1  0.855  0.029  0.707  1.0
  S  S28  1  0.458  0.353  0.049  1.0
  S  S29  1  0.606  0.701  0.346  1.0
  S  S30  1  0.884  0.711  0.838  1.0
  S  S31  1  0.491  0.128  0.886  1.0
  S  S32  1  0.242  0.613  0.150  1.0
  S  S33  1  0.758  0.387  0.850  1.0
  S  S34  1  0.839  0.502  0.057  1.0
  S  S35  1  0.509  0.872  0.114  1.0
  S  S36  1  0.192  0.866  0.537  1.0
  S  S37  1  0.116  0.289  0.162  1.0
  S  S38  1  0.822  0.981  0.957  1.0
  S  S39  1  0.515  0.994  0.623  1.0
  S  S40  1  0.867  0.783  0.167  1.0
  S  S41  1  0.161  0.498  0.943  1.0
  S  S42  1  0.542  0.647  0.951  1.0
  S  S43  1  0.683  0.481  0.533  1.0
  S  S44  1  0.178  0.019  0.043  1.0
  S  S45  1  0.808  0.134  0.463  1.0
  S  S46  1  0.485  0.006  0.377  1.0
  S  S47  1  0.793  0.809  0.540  1.0
  S  S48  1  0.254  0.887  0.833  1.0
  S  S49  1  0.429  0.354  0.279  1.0
  S  S50  1  0.145  0.971  0.293  1.0
  S  S51  1  0.207  0.191  0.460  1.0
  S  S52  1  0.982  0.653  0.397  1.0
  S  S53  1  0.797  0.410  0.305  1.0
[/CIF]
.
The compound described by Ce6Si4S17 crystallizes in the triclinic P-1 space group. There are six inequivalent Ce sites. In the first Ce site, Ce(1) is bonded in a 8-coordinate geometry to one S(1), one S(14), one S(16), one S(17), one S(2), one S(5), one S(7), and one S(8) atom. In the second Ce site, Ce(2) is bonded in a 9-coordinate geometry to one S(14), one S(17), one S(3), one S(4), one S(7), two equivalent S(16), and two equivalent S(6) atoms. In the third Ce site, Ce(3) is bonded in a 8-coordinate geometry to one S(1), one S(10), one S(11), one S(15), one S(16), one S(4), one S(8), and one S(9) atom. In the fourth Ce site, Ce(4) is bonded to one S(10), one S(12), one S(17), one S(3), one S(4), one S(5), and one S(6) atom to form distorted CeS7 pentagonal bipyramids that share  a cornercorner with one Si(1)S4 tetrahedra,  a cornercorner with one Si(3)S4 tetrahedra,  an edgeedge with one Si(1)S4 tetrahedra, and  an edgeedge with one Si(2)S4 tetrahedra. In the fifth Ce site, Ce(5) is bonded in a 9-coordinate geometry to one S(11), one S(12), one S(13), one S(2), one S(3), one S(4), one S(7), and two equivalent S(9) atoms. In the sixth Ce site, Ce(6) is bonded in a 8-coordinate geometry to one S(1), one S(10), one S(12), one S(2), two equivalent S(13), and two equivalent S(15) atoms. There are four inequivalent Si sites. In the first Si site, Si(1) is bonded to one S(3), one S(5), one S(6), and one S(7) atom to form SiS4 tetrahedra that share  a cornercorner with one Ce(4)S7 pentagonal bipyramid and  an edgeedge with one Ce(4)S7 pentagonal bipyramid. In the second Si site, Si(2) is bonded to one S(10), one S(12), one S(13), and one S(9) atom to form SiS4 tetrahedra that share  an edgeedge with one Ce(4)S7 pentagonal bipyramid. In the third Si site, Si(3) is bonded to one S(14), one S(16), one S(17), and one S(8) atom to form SiS4 tetrahedra that share  a cornercorner with one Ce(4)S7 pentagonal bipyramid. In the fourth Si site, Si(4) is bonded in a tetrahedral geometry to one S(1), one S(11), one S(15), and one S(2) atom. There are seventeen inequivalent S sites. In the first S site, S(1) is bonded to one Ce(1), one Ce(3), one Ce(6), and one Si(4) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(4)Ce4 tetrahedra,  a cornercorner with one S(12)Ce3Si trigonal pyramid,  a cornercorner with one S(17)Ce3Si trigonal pyramid,  a cornercorner with one S(2)Ce3Si trigonal pyramid,  a cornercorner with one S(9)Ce3Si trigonal pyramid, corners with two equivalent S(13)Ce3Si trigonal pyramids, and  an edgeedge with one S(2)Ce3Si trigonal pyramid. In the second S site, S(2) is bonded to one Ce(1), one Ce(5), one Ce(6), and one Si(4) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(4)Ce4 tetrahedra,  a cornercorner with one S(1)Ce3Si trigonal pyramid,  a cornercorner with one S(13)Ce3Si trigonal pyramid,  a cornercorner with one S(17)Ce3Si trigonal pyramid, corners with two equivalent S(12)Ce3Si trigonal pyramids, corners with two equivalent S(9)Ce3Si trigonal pyramids,  an edgeedge with one S(1)Ce3Si trigonal pyramid, and  an edgeedge with one S(13)Ce3Si trigonal pyramid. In the third S site, S(3) is bonded in a 4-coordinate geometry to one Ce(2), one Ce(4), one Ce(5), and one Si(1) atom. In the fourth S site, S(4) is bonded to one Ce(2), one Ce(3), one Ce(4), and one Ce(5) atom to form a mixture of corner and edge-sharing SCe4 tetrahedra. In the fifth S site, S(5) is bonded in a distorted T-shaped geometry to one Ce(1), one Ce(4), and one Si(1) atom. In the sixth S site, S(6) is bonded in a distorted rectangular see-saw-like geometry to one Ce(4), two equivalent Ce(2), and one Si(1) atom. In the seventh S site, S(7) is bonded in a distorted rectangular see-saw-like geometry to one Ce(1), one Ce(2), one Ce(5), and one Si(1) atom. In the eighth S site, S(8) is bonded in a distorted T-shaped geometry to one Ce(1), one Ce(3), and one Si(3) atom. In the ninth S site, S(9) is bonded to one Ce(3), two equivalent Ce(5), and one Si(2) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(4)Ce4 tetrahedra,  a cornercorner with one S(1)Ce3Si trigonal pyramid,  a cornercorner with one S(12)Ce3Si trigonal pyramid,  a cornercorner with one S(13)Ce3Si trigonal pyramid, corners with two equivalent S(2)Ce3Si trigonal pyramids,  an edgeedge with one S(4)Ce4 tetrahedra,  an edgeedge with one S(12)Ce3Si trigonal pyramid,  an edgeedge with one S(13)Ce3Si trigonal pyramid, and  an edgeedge with one S(9)Ce3Si trigonal pyramid. In the tenth S site, S(10) is bonded in a distorted rectangular see-saw-like geometry to one Ce(3), one Ce(4), one Ce(6), and one Si(2) atom. In the eleventh S site, S(11) is bonded in a distorted T-shaped geometry to one Ce(3), one Ce(5), and one Si(4) atom. In the twelfth S site, S(12) is bonded to one Ce(4), one Ce(5), one Ce(6), and one Si(2) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(1)Ce3Si trigonal pyramid,  a cornercorner with one S(17)Ce3Si trigonal pyramid,  a cornercorner with one S(9)Ce3Si trigonal pyramid, corners with two equivalent S(13)Ce3Si trigonal pyramids, corners with two equivalent S(2)Ce3Si trigonal pyramids,  an edgeedge with one S(4)Ce4 tetrahedra,  an edgeedge with one S(13)Ce3Si trigonal pyramid, and  an edgeedge with one S(9)Ce3Si trigonal pyramid. In the thirteenth S site, S(13) is bonded to one Ce(5), two equivalent Ce(6), and one Si(2) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(4)Ce4 tetrahedra,  a cornercorner with one S(2)Ce3Si trigonal pyramid,  a cornercorner with one S(9)Ce3Si trigonal pyramid, corners with two equivalent S(1)Ce3Si trigonal pyramids, corners with two equivalent S(12)Ce3Si trigonal pyramids,  an edgeedge with one S(12)Ce3Si trigonal pyramid,  an edgeedge with one S(13)Ce3Si trigonal pyramid,  an edgeedge with one S(2)Ce3Si trigonal pyramid, and  an edgeedge with one S(9)Ce3Si trigonal pyramid. In the fourteenth S site, S(14) is bonded in a 3-coordinate geometry to one Ce(1), one Ce(2), and one Si(3) atom. In the fifteenth S site, S(15) is bonded in a distorted rectangular see-saw-like geometry to one Ce(3), two equivalent Ce(6), and one Si(4) atom. In the sixteenth S site, S(16) is bonded in a 5-coordinate geometry to one Ce(1), one Ce(3), two equivalent Ce(2), and one Si(3) atom. In the seventeenth S site, S(17) is bonded to one Ce(1), one Ce(2), one Ce(4), and one Si(3) atom to form distorted SCe3Si trigonal pyramids that share  a cornercorner with one S(1)Ce3Si trigonal pyramid,  a cornercorner with one S(12)Ce3Si trigonal pyramid,  a cornercorner with one S(2)Ce3Si trigonal pyramid, and  an edgeedge with one S(4)Ce4 tetrahedra. is represented by the CIF file [CIF]
data_Ce6Si4S17
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.011
_cell_length_b   10.066
_cell_length_c   14.336
_cell_angle_alpha   82.269
_cell_angle_beta   86.863
_cell_angle_gamma   89.242
_symmetry_Int_Tables_number   1
_cell_volume   1286.550
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ce  Ce0  1  0.171  0.089  0.658  1.0
  Ce  Ce1  1  0.520  0.268  0.458  1.0
  Ce  Ce2  1  0.606  0.885  0.817  1.0
  Ce  Ce3  1  0.130  0.431  0.326  1.0
  Ce  Ce4  1  0.418  0.421  0.833  1.0
  Ce  Ce5  1  0.949  0.239  0.001  1.0
  Ce  Ce6  1  0.394  0.115  0.183  1.0
  Ce  Ce7  1  0.480  0.732  0.542  1.0
  Ce  Ce8  1  0.870  0.569  0.674  1.0
  Ce  Ce9  1  0.829  0.911  0.342  1.0
  Ce  Ce10  1  0.051  0.761  0.999  1.0
  Ce  Ce11  1  0.582  0.579  0.167  1.0
  Si  Si12  1  0.774  0.558  0.394  1.0
  Si  Si13  1  0.752  0.559  0.923  1.0
  Si  Si14  1  0.251  0.999  0.415  1.0
  Si  Si15  1  0.731  0.938  0.099  1.0
  Si  Si16  1  0.269  0.062  0.901  1.0
  Si  Si17  1  0.226  0.442  0.606  1.0
  Si  Si18  1  0.248  0.441  0.077  1.0
  Si  Si19  1  0.749  0.001  0.585  1.0
  S  S20  1  0.746  0.113  0.167  1.0
  S  S21  1  0.133  0.217  0.833  1.0
  S  S22  1  0.203  0.590  0.695  1.0
  S  S23  1  0.571  0.646  0.721  1.0
  S  S24  1  0.018  0.347  0.603  1.0
  S  S25  1  0.317  0.519  0.467  1.0
  S  S26  1  0.394  0.299  0.654  1.0
  S  S27  1  0.855  0.029  0.707  1.0
  S  S28  1  0.458  0.353  0.049  1.0
  S  S29  1  0.606  0.701  0.346  1.0
  S  S30  1  0.884  0.711  0.838  1.0
  S  S31  1  0.491  0.128  0.886  1.0
  S  S32  1  0.242  0.613  0.150  1.0
  S  S33  1  0.758  0.387  0.850  1.0
  S  S34  1  0.839  0.502  0.057  1.0
  S  S35  1  0.509  0.872  0.114  1.0
  S  S36  1  0.192  0.866  0.537  1.0
  S  S37  1  0.116  0.289  0.162  1.0
  S  S38  1  0.822  0.981  0.957  1.0
  S  S39  1  0.515  0.994  0.623  1.0
  S  S40  1  0.867  0.783  0.167  1.0
  S  S41  1  0.161  0.498  0.943  1.0
  S  S42  1  0.542  0.647  0.951  1.0
  S  S43  1  0.683  0.481  0.533  1.0
  S  S44  1  0.178  0.019  0.043  1.0
  S  S45  1  0.808  0.134  0.463  1.0
  S  S46  1  0.485  0.006  0.377  1.0
  S  S47  1  0.793  0.809  0.540  1.0
  S  S48  1  0.254  0.887  0.833  1.0
  S  S49  1  0.429  0.354  0.279  1.0
  S  S50  1  0.145  0.971  0.293  1.0
  S  S51  1  0.207  0.191  0.460  1.0
  S  S52  1  0.982  0.653  0.397  1.0
  S  S53  1  0.797  0.410  0.305  1.0
[/CIF]
.