The material structure described by Ba2BiGa11O20 crystallizes in the monoclinic Cm space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 6-coordinate geometry to one O(10), one O(9), two equivalent O(5), and two equivalent O(6) atoms. In the second Ba site, Ba(2) is bonded in a 7-coordinate geometry to one O(3), two equivalent O(2), two equivalent O(6), and two equivalent O(7) atoms. There are six inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(11), one O(12), one O(3), one O(4), one O(7), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Ga(4)O4 tetrahedra,  a cornercorner with one Ga(5)O4 tetrahedra, corners with two equivalent Ga(2)O4 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra,  an edgeedge with one Ga(1)O6 octahedra, and edges with two equivalent Ga(6)O6 octahedra. In the second Ga site, Ga(2) is bonded to one O(1), one O(12), one O(6), and one O(8) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(6)O6 octahedra, corners with two equivalent Ga(1)O6 octahedra,  a cornercorner with one Ga(4)O4 tetrahedra, and corners with two equivalent Ga(5)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 44-65°. In the third Ga site, Ga(3) is bonded to one O(11), one O(2), one O(5), and one O(7) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(6)O6 octahedra, corners with two equivalent Ga(1)O6 octahedra,  a cornercorner with one Ga(5)O4 tetrahedra, and corners with two equivalent Ga(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 44-65°. In the fourth Ga site, Ga(4) is bonded to one O(1), one O(11), one O(5), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O4 tetrahedra,  a cornercorner with one Ga(4)O4 tetrahedra, and corners with two equivalent Ga(3)O4 tetrahedra. The corner-sharing octahedral tilt angles are 52°. In the fifth Ga site, Ga(5) is bonded to one O(10), one O(12), one O(2), and one O(6) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one Ga(5)O4 tetrahedra, and corners with two equivalent Ga(2)O4 tetrahedra. The corner-sharing octahedral tilt angles are 52°. In the sixth Ga site, Ga(6) is bonded to one O(3), one O(4), two equivalent O(7), and two equivalent O(8) atoms to form GaO6 octahedra that share corners with two equivalent Ga(2)O4 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra, and edges with four equivalent Ga(1)O6 octahedra. Bi(1) is bonded in a distorted T-shaped geometry to one O(4) and two equivalent O(1) atoms. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one Ga(2), one Ga(4), and one Bi(1) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to one Ba(2), one Ga(3), and one Ga(5) atom. In the third O site, O(3) is bonded in a distorted tetrahedral geometry to one Ba(2), one Ga(6), and two equivalent Ga(1) atoms. In the fourth O site, O(4) is bonded in a rectangular see-saw-like geometry to one Ga(6), two equivalent Ga(1), and one Bi(1) atom. In the fifth O site, O(5) is bonded in a distorted bent 120 degrees geometry to one Ba(1), one Ga(3), and one Ga(4) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one Ba(1), one Ba(2), one Ga(2), and one Ga(5) atom. In the seventh O site, O(7) is bonded in a 3-coordinate geometry to one Ba(2), one Ga(1), one Ga(3), and one Ga(6) atom. In the eighth O site, O(8) is bonded in a distorted trigonal non-coplanar geometry to one Ga(1), one Ga(2), and one Ga(6) atom. In the ninth O site, O(9) is bonded in a distorted trigonal planar geometry to one Ba(1) and two equivalent Ga(4) atoms. In the tenth O site, O(10) is bonded in a 3-coordinate geometry to one Ba(1) and two equivalent Ga(5) atoms. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one Ga(1), one Ga(3), and one Ga(4) atom. In the twelfth O site, O(12) is bonded in a trigonal planar geometry to one Ga(1), one Ga(2), and one Ga(5) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ba2Ga11BiO20
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.919
_cell_length_b   9.919
_cell_length_c   5.193
_cell_angle_alpha   75.585
_cell_angle_beta   75.585
_cell_angle_gamma   73.681
_symmetry_Int_Tables_number   1
_cell_volume   466.100
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.000  0.000  0.000  1.0
  Ba  Ba1  1  0.283  0.283  0.749  1.0
  Ga  Ga2  1  0.364  0.634  0.497  1.0
  Ga  Ga3  1  0.634  0.364  0.497  1.0
  Ga  Ga4  1  0.847  0.420  0.844  1.0
  Ga  Ga5  1  0.576  0.150  0.158  1.0
  Ga  Ga6  1  0.150  0.576  0.158  1.0
  Ga  Ga7  1  0.420  0.847  0.844  1.0
  Ga  Ga8  1  0.990  0.717  0.659  1.0
  Ga  Ga9  1  0.285  0.009  0.345  1.0
  Ga  Ga10  1  0.009  0.285  0.345  1.0
  Ga  Ga11  1  0.717  0.990  0.659  1.0
  Ga  Ga12  1  0.501  0.501  0.007  1.0
  Bi  Bi13  1  0.711  0.711  0.365  1.0
  O  O14  1  0.866  0.605  0.640  1.0
  O  O15  1  0.398  0.127  0.344  1.0
  O  O16  1  0.127  0.398  0.344  1.0
  O  O17  1  0.605  0.866  0.640  1.0
  O  O18  1  0.439  0.439  0.394  1.0
  O  O19  1  0.574  0.574  0.609  1.0
  O  O20  1  0.705  0.997  0.015  1.0
  O  O21  1  0.997  0.293  0.988  1.0
  O  O22  1  0.293  0.997  0.988  1.0
  O  O23  1  0.997  0.705  0.015  1.0
  O  O24  1  0.548  0.312  0.885  1.0
  O  O25  1  0.693  0.457  0.116  1.0
  O  O26  1  0.457  0.693  0.116  1.0
  O  O27  1  0.312  0.548  0.885  1.0
  O  O28  1  0.900  0.900  0.519  1.0
  O  O29  1  0.097  0.097  0.475  1.0
  O  O30  1  0.166  0.668  0.425  1.0
  O  O31  1  0.332  0.830  0.576  1.0
  O  O32  1  0.830  0.332  0.576  1.0
  O  O33  1  0.668  0.166  0.425  1.0
[/CIF]
.
The material structure described by Ba2BiGa11O20 crystallizes in the monoclinic Cm space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 6-coordinate geometry to one O(10), one O(9), two equivalent O(5), and two equivalent O(6) atoms. In the second Ba site, Ba(2) is bonded in a 7-coordinate geometry to one O(3), two equivalent O(2), two equivalent O(6), and two equivalent O(7) atoms. There are six inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(11), one O(12), one O(3), one O(4), one O(7), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Ga(4)O4 tetrahedra,  a cornercorner with one Ga(5)O4 tetrahedra, corners with two equivalent Ga(2)O4 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra,  an edgeedge with one Ga(1)O6 octahedra, and edges with two equivalent Ga(6)O6 octahedra. In the second Ga site, Ga(2) is bonded to one O(1), one O(12), one O(6), and one O(8) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(6)O6 octahedra, corners with two equivalent Ga(1)O6 octahedra,  a cornercorner with one Ga(4)O4 tetrahedra, and corners with two equivalent Ga(5)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 44-65°. In the third Ga site, Ga(3) is bonded to one O(11), one O(2), one O(5), and one O(7) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(6)O6 octahedra, corners with two equivalent Ga(1)O6 octahedra,  a cornercorner with one Ga(5)O4 tetrahedra, and corners with two equivalent Ga(4)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 44-65°. In the fourth Ga site, Ga(4) is bonded to one O(1), one O(11), one O(5), and one O(9) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(2)O4 tetrahedra,  a cornercorner with one Ga(4)O4 tetrahedra, and corners with two equivalent Ga(3)O4 tetrahedra. The corner-sharing octahedral tilt angles are 52°. In the fifth Ga site, Ga(5) is bonded to one O(10), one O(12), one O(2), and one O(6) atom to form GaO4 tetrahedra that share  a cornercorner with one Ga(1)O6 octahedra,  a cornercorner with one Ga(3)O4 tetrahedra,  a cornercorner with one Ga(5)O4 tetrahedra, and corners with two equivalent Ga(2)O4 tetrahedra. The corner-sharing octahedral tilt angles are 52°. In the sixth Ga site, Ga(6) is bonded to one O(3), one O(4), two equivalent O(7), and two equivalent O(8) atoms to form GaO6 octahedra that share corners with two equivalent Ga(2)O4 tetrahedra, corners with two equivalent Ga(3)O4 tetrahedra, and edges with four equivalent Ga(1)O6 octahedra. Bi(1) is bonded in a distorted T-shaped geometry to one O(4) and two equivalent O(1) atoms. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a trigonal planar geometry to one Ga(2), one Ga(4), and one Bi(1) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to one Ba(2), one Ga(3), and one Ga(5) atom. In the third O site, O(3) is bonded in a distorted tetrahedral geometry to one Ba(2), one Ga(6), and two equivalent Ga(1) atoms. In the fourth O site, O(4) is bonded in a rectangular see-saw-like geometry to one Ga(6), two equivalent Ga(1), and one Bi(1) atom. In the fifth O site, O(5) is bonded in a distorted bent 120 degrees geometry to one Ba(1), one Ga(3), and one Ga(4) atom. In the sixth O site, O(6) is bonded in a 4-coordinate geometry to one Ba(1), one Ba(2), one Ga(2), and one Ga(5) atom. In the seventh O site, O(7) is bonded in a 3-coordinate geometry to one Ba(2), one Ga(1), one Ga(3), and one Ga(6) atom. In the eighth O site, O(8) is bonded in a distorted trigonal non-coplanar geometry to one Ga(1), one Ga(2), and one Ga(6) atom. In the ninth O site, O(9) is bonded in a distorted trigonal planar geometry to one Ba(1) and two equivalent Ga(4) atoms. In the tenth O site, O(10) is bonded in a 3-coordinate geometry to one Ba(1) and two equivalent Ga(5) atoms. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one Ga(1), one Ga(3), and one Ga(4) atom. In the twelfth O site, O(12) is bonded in a trigonal planar geometry to one Ga(1), one Ga(2), and one Ga(5) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ba2Ga11BiO20
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.919
_cell_length_b   9.919
_cell_length_c   5.193
_cell_angle_alpha   75.585
_cell_angle_beta   75.585
_cell_angle_gamma   73.681
_symmetry_Int_Tables_number   1
_cell_volume   466.100
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.000  0.000  0.000  1.0
  Ba  Ba1  1  0.283  0.283  0.749  1.0
  Ga  Ga2  1  0.364  0.634  0.497  1.0
  Ga  Ga3  1  0.634  0.364  0.497  1.0
  Ga  Ga4  1  0.847  0.420  0.844  1.0
  Ga  Ga5  1  0.576  0.150  0.158  1.0
  Ga  Ga6  1  0.150  0.576  0.158  1.0
  Ga  Ga7  1  0.420  0.847  0.844  1.0
  Ga  Ga8  1  0.990  0.717  0.659  1.0
  Ga  Ga9  1  0.285  0.009  0.345  1.0
  Ga  Ga10  1  0.009  0.285  0.345  1.0
  Ga  Ga11  1  0.717  0.990  0.659  1.0
  Ga  Ga12  1  0.501  0.501  0.007  1.0
  Bi  Bi13  1  0.711  0.711  0.365  1.0
  O  O14  1  0.866  0.605  0.640  1.0
  O  O15  1  0.398  0.127  0.344  1.0
  O  O16  1  0.127  0.398  0.344  1.0
  O  O17  1  0.605  0.866  0.640  1.0
  O  O18  1  0.439  0.439  0.394  1.0
  O  O19  1  0.574  0.574  0.609  1.0
  O  O20  1  0.705  0.997  0.015  1.0
  O  O21  1  0.997  0.293  0.988  1.0
  O  O22  1  0.293  0.997  0.988  1.0
  O  O23  1  0.997  0.705  0.015  1.0
  O  O24  1  0.548  0.312  0.885  1.0
  O  O25  1  0.693  0.457  0.116  1.0
  O  O26  1  0.457  0.693  0.116  1.0
  O  O27  1  0.312  0.548  0.885  1.0
  O  O28  1  0.900  0.900  0.519  1.0
  O  O29  1  0.097  0.097  0.475  1.0
  O  O30  1  0.166  0.668  0.425  1.0
  O  O31  1  0.332  0.830  0.576  1.0
  O  O32  1  0.830  0.332  0.576  1.0
  O  O33  1  0.668  0.166  0.425  1.0
[/CIF]
.