The material structure described by Rb2InGe4As7 crystallizes in the monoclinic Cm space group. There are two inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 8-coordinate geometry to two equivalent As(1), two equivalent As(4), two equivalent As(5), and two equivalent As(7) atoms. In the second Rb site, Rb(2) is bonded in a distorted body-centered cubic geometry to two equivalent Ge(3), two equivalent As(2), two equivalent As(3), and two equivalent As(6) atoms. In(1) is bonded to one Ge(3), one As(2), and two equivalent As(3) atoms to form InGeAs3 tetrahedra that share corners with two equivalent In(1)GeAs3 tetrahedra, corners with two equivalent Ge(1)As4 tetrahedra, and corners with two equivalent Ge(2)As4 tetrahedra. There are four inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to one As(3), one As(5), and two equivalent As(1) atoms to form GeAs4 tetrahedra that share corners with two equivalent In(1)GeAs3 tetrahedra, corners with two equivalent Ge(1)As4 tetrahedra, and corners with two equivalent Ge(4)As4 tetrahedra. In the second Ge site, Ge(2) is bonded to one As(4), one As(6), and two equivalent As(2) atoms to form GeAs4 tetrahedra that share corners with two equivalent As(7)Rb2GeAs2 square pyramids, corners with two equivalent In(1)GeAs3 tetrahedra, corners with two equivalent Ge(2)As4 tetrahedra, and corners with two equivalent Ge(4)As4 tetrahedra. In the third Ge site, Ge(3) is bonded in a 5-coordinate geometry to two equivalent Rb(2), one In(1), and two equivalent As(5) atoms. In the fourth Ge site, Ge(4) is bonded to one As(1), one As(7), and two equivalent As(4) atoms to form corner-sharing GeAs4 tetrahedra. There are seven inequivalent As sites. In the first As site, As(1) is bonded to two equivalent Rb(1), one Ge(4), and two equivalent Ge(1) atoms to form distorted AsRb2Ge3 square pyramids that share corners with two equivalent As(7)Rb2GeAs2 square pyramids, corners with two equivalent As(3)Rb2In2Ge trigonal bipyramids, edges with two equivalent As(1)Rb2Ge3 square pyramids, and  a faceface with one As(7)Rb2GeAs2 square pyramid. In the second As site, As(2) is bonded in a 5-coordinate geometry to two equivalent Rb(2), one In(1), and two equivalent Ge(2) atoms. In the third As site, As(3) is bonded to two equivalent Rb(2), two equivalent In(1), and one Ge(1) atom to form distorted AsRb2In2Ge trigonal bipyramids that share corners with two equivalent As(1)Rb2Ge3 square pyramids and edges with two equivalent As(3)Rb2In2Ge trigonal bipyramids. In the fourth As site, As(4) is bonded in a 5-coordinate geometry to two equivalent Rb(1), one Ge(2), and two equivalent Ge(4) atoms. In the fifth As site, As(5) is bonded in a 5-coordinate geometry to two equivalent Rb(1), one Ge(1), and two equivalent Ge(3) atoms. In the sixth As site, As(6) is bonded in a 5-coordinate geometry to two equivalent Rb(2), one Ge(2), and two equivalent As(7) atoms. In the seventh As site, As(7) is bonded to two equivalent Rb(1), one Ge(4), and two equivalent As(6) atoms to form distorted AsRb2GeAs2 square pyramids that share corners with two equivalent As(1)Rb2Ge3 square pyramids, corners with two equivalent Ge(2)As4 tetrahedra, edges with two equivalent As(7)Rb2GeAs2 square pyramids, and  a faceface with one As(1)Rb2Ge3 square pyramid. is represented by the CIF card [CIF]
data_Rb2InGe4As7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.718
_cell_length_b   8.718
_cell_length_c   12.664
_cell_angle_alpha   89.851
_cell_angle_beta   89.851
_cell_angle_gamma   25.825
_symmetry_Int_Tables_number   1
_cell_volume   419.330
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Rb  Rb0  1  0.269  0.269  0.665  1.0
  Rb  Rb1  1  0.736  0.736  0.146  1.0
  In  In2  1  0.468  0.468  0.089  1.0
  Ge  Ge3  1  0.026  0.026  0.864  1.0
  Ge  Ge4  1  0.971  0.971  0.371  1.0
  Ge  Ge5  1  0.341  0.341  0.959  1.0
  Ge  Ge6  1  0.530  0.530  0.601  1.0
  As  As7  1  0.595  0.595  0.776  1.0
  As  As8  1  0.405  0.405  0.289  1.0
  As  As9  1  0.073  0.073  0.048  1.0
  As  As10  1  0.943  0.943  0.563  1.0
  As  As11  1  0.881  0.881  0.843  1.0
  As  As12  1  0.117  0.117  0.353  1.0
  As  As13  1  0.646  0.646  0.472  1.0
[/CIF]
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The material structure described by Rb2InGe4As7 crystallizes in the monoclinic Cm space group. There are two inequivalent Rb sites. In the first Rb site, Rb(1) is bonded in a 8-coordinate geometry to two equivalent As(1), two equivalent As(4), two equivalent As(5), and two equivalent As(7) atoms. In the second Rb site, Rb(2) is bonded in a distorted body-centered cubic geometry to two equivalent Ge(3), two equivalent As(2), two equivalent As(3), and two equivalent As(6) atoms. In(1) is bonded to one Ge(3), one As(2), and two equivalent As(3) atoms to form InGeAs3 tetrahedra that share corners with two equivalent In(1)GeAs3 tetrahedra, corners with two equivalent Ge(1)As4 tetrahedra, and corners with two equivalent Ge(2)As4 tetrahedra. There are four inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to one As(3), one As(5), and two equivalent As(1) atoms to form GeAs4 tetrahedra that share corners with two equivalent In(1)GeAs3 tetrahedra, corners with two equivalent Ge(1)As4 tetrahedra, and corners with two equivalent Ge(4)As4 tetrahedra. In the second Ge site, Ge(2) is bonded to one As(4), one As(6), and two equivalent As(2) atoms to form GeAs4 tetrahedra that share corners with two equivalent As(7)Rb2GeAs2 square pyramids, corners with two equivalent In(1)GeAs3 tetrahedra, corners with two equivalent Ge(2)As4 tetrahedra, and corners with two equivalent Ge(4)As4 tetrahedra. In the third Ge site, Ge(3) is bonded in a 5-coordinate geometry to two equivalent Rb(2), one In(1), and two equivalent As(5) atoms. In the fourth Ge site, Ge(4) is bonded to one As(1), one As(7), and two equivalent As(4) atoms to form corner-sharing GeAs4 tetrahedra. There are seven inequivalent As sites. In the first As site, As(1) is bonded to two equivalent Rb(1), one Ge(4), and two equivalent Ge(1) atoms to form distorted AsRb2Ge3 square pyramids that share corners with two equivalent As(7)Rb2GeAs2 square pyramids, corners with two equivalent As(3)Rb2In2Ge trigonal bipyramids, edges with two equivalent As(1)Rb2Ge3 square pyramids, and  a faceface with one As(7)Rb2GeAs2 square pyramid. In the second As site, As(2) is bonded in a 5-coordinate geometry to two equivalent Rb(2), one In(1), and two equivalent Ge(2) atoms. In the third As site, As(3) is bonded to two equivalent Rb(2), two equivalent In(1), and one Ge(1) atom to form distorted AsRb2In2Ge trigonal bipyramids that share corners with two equivalent As(1)Rb2Ge3 square pyramids and edges with two equivalent As(3)Rb2In2Ge trigonal bipyramids. In the fourth As site, As(4) is bonded in a 5-coordinate geometry to two equivalent Rb(1), one Ge(2), and two equivalent Ge(4) atoms. In the fifth As site, As(5) is bonded in a 5-coordinate geometry to two equivalent Rb(1), one Ge(1), and two equivalent Ge(3) atoms. In the sixth As site, As(6) is bonded in a 5-coordinate geometry to two equivalent Rb(2), one Ge(2), and two equivalent As(7) atoms. In the seventh As site, As(7) is bonded to two equivalent Rb(1), one Ge(4), and two equivalent As(6) atoms to form distorted AsRb2GeAs2 square pyramids that share corners with two equivalent As(1)Rb2Ge3 square pyramids, corners with two equivalent Ge(2)As4 tetrahedra, edges with two equivalent As(7)Rb2GeAs2 square pyramids, and  a faceface with one As(1)Rb2Ge3 square pyramid. is represented by the CIF card [CIF]
data_Rb2InGe4As7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.718
_cell_length_b   8.718
_cell_length_c   12.664
_cell_angle_alpha   89.851
_cell_angle_beta   89.851
_cell_angle_gamma   25.825
_symmetry_Int_Tables_number   1
_cell_volume   419.330
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Rb  Rb0  1  0.269  0.269  0.665  1.0
  Rb  Rb1  1  0.736  0.736  0.146  1.0
  In  In2  1  0.468  0.468  0.089  1.0
  Ge  Ge3  1  0.026  0.026  0.864  1.0
  Ge  Ge4  1  0.971  0.971  0.371  1.0
  Ge  Ge5  1  0.341  0.341  0.959  1.0
  Ge  Ge6  1  0.530  0.530  0.601  1.0
  As  As7  1  0.595  0.595  0.776  1.0
  As  As8  1  0.405  0.405  0.289  1.0
  As  As9  1  0.073  0.073  0.048  1.0
  As  As10  1  0.943  0.943  0.563  1.0
  As  As11  1  0.881  0.881  0.843  1.0
  As  As12  1  0.117  0.117  0.353  1.0
  As  As13  1  0.646  0.646  0.472  1.0
[/CIF]
.