The material described by V10(GeSi)3 crystallizes in the orthorhombic Fmm2 space group. There are five inequivalent V sites. In the first V site, V(1) is bonded in a 6-coordinate geometry to two equivalent Ge(1), one Si(1), and three equivalent Si(2) atoms. In the second V site, V(2) is bonded in a 6-coordinate geometry to one Ge(2), two equivalent Ge(1), and three equivalent Si(2) atoms. In the third V site, V(3) is bonded in a 6-coordinate geometry to two equivalent Ge(1), two equivalent Ge(2), one Si(1), and one Si(2) atom. In the fourth V site, V(4) is bonded in a 6-coordinate geometry to one Ge(2), two equivalent Ge(1), one Si(2), and two equivalent Si(1) atoms. In the fifth V site, V(5) is bonded in a 6-coordinate geometry to two equivalent V(5), one Ge(2), one Si(1), and two equivalent Si(2) atoms. There are two inequivalent Ge sites. In the first Ge site, Ge(1) is bonded in a 10-coordinate geometry to two equivalent V(1), two equivalent V(2), two equivalent V(3), two equivalent V(4), and two equivalent Ge(1) atoms. In the second Ge site, Ge(2) is bonded in a 10-coordinate geometry to two equivalent V(2), two equivalent V(4), two equivalent V(5), and four equivalent V(3) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a 10-coordinate geometry to two equivalent V(1), two equivalent V(3), two equivalent V(5), and four equivalent V(4) atoms. In the second Si site, Si(2) is bonded in a 10-coordinate geometry to one V(3), one V(4), two equivalent V(5), three equivalent V(1), and three equivalent V(2) atoms. is represented by the CIF file [CIF]
data_V10(SiGe)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.433
_cell_length_b   7.098
_cell_length_c   7.072
_cell_angle_alpha   83.477
_cell_angle_beta   48.381
_cell_angle_gamma   48.142
_symmetry_Int_Tables_number   1
_cell_volume   212.483
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.770  0.423  0.577  1.0
  V  V1  1  0.229  0.579  0.421  1.0
  V  V2  1  0.729  0.925  0.075  1.0
  V  V3  1  0.268  0.073  0.927  1.0
  V  V4  1  0.925  0.729  0.271  1.0
  V  V5  1  0.073  0.268  0.732  1.0
  V  V6  1  0.423  0.770  0.230  1.0
  V  V7  1  0.579  0.229  0.771  1.0
  V  V8  1  0.754  0.250  0.246  1.0
  V  V9  1  0.250  0.754  0.750  1.0
  Si  Si10  1  0.666  0.666  0.334  1.0
  Si  Si11  1  0.165  0.834  0.166  1.0
  Si  Si12  1  0.834  0.165  0.835  1.0
  Ge  Ge13  1  0.250  0.250  0.250  1.0
  Ge  Ge14  1  0.750  0.750  0.750  1.0
  Ge  Ge15  1  0.334  0.334  0.666  1.0
[/CIF]
.
The material described by V10(GeSi)3 crystallizes in the orthorhombic Fmm2 space group. There are five inequivalent V sites. In the first V site, V(1) is bonded in a 6-coordinate geometry to two equivalent Ge(1), one Si(1), and three equivalent Si(2) atoms. In the second V site, V(2) is bonded in a 6-coordinate geometry to one Ge(2), two equivalent Ge(1), and three equivalent Si(2) atoms. In the third V site, V(3) is bonded in a 6-coordinate geometry to two equivalent Ge(1), two equivalent Ge(2), one Si(1), and one Si(2) atom. In the fourth V site, V(4) is bonded in a 6-coordinate geometry to one Ge(2), two equivalent Ge(1), one Si(2), and two equivalent Si(1) atoms. In the fifth V site, V(5) is bonded in a 6-coordinate geometry to two equivalent V(5), one Ge(2), one Si(1), and two equivalent Si(2) atoms. There are two inequivalent Ge sites. In the first Ge site, Ge(1) is bonded in a 10-coordinate geometry to two equivalent V(1), two equivalent V(2), two equivalent V(3), two equivalent V(4), and two equivalent Ge(1) atoms. In the second Ge site, Ge(2) is bonded in a 10-coordinate geometry to two equivalent V(2), two equivalent V(4), two equivalent V(5), and four equivalent V(3) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a 10-coordinate geometry to two equivalent V(1), two equivalent V(3), two equivalent V(5), and four equivalent V(4) atoms. In the second Si site, Si(2) is bonded in a 10-coordinate geometry to one V(3), one V(4), two equivalent V(5), three equivalent V(1), and three equivalent V(2) atoms. is represented by the CIF file [CIF]
data_V10(SiGe)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.433
_cell_length_b   7.098
_cell_length_c   7.072
_cell_angle_alpha   83.477
_cell_angle_beta   48.381
_cell_angle_gamma   48.142
_symmetry_Int_Tables_number   1
_cell_volume   212.483
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.770  0.423  0.577  1.0
  V  V1  1  0.229  0.579  0.421  1.0
  V  V2  1  0.729  0.925  0.075  1.0
  V  V3  1  0.268  0.073  0.927  1.0
  V  V4  1  0.925  0.729  0.271  1.0
  V  V5  1  0.073  0.268  0.732  1.0
  V  V6  1  0.423  0.770  0.230  1.0
  V  V7  1  0.579  0.229  0.771  1.0
  V  V8  1  0.754  0.250  0.246  1.0
  V  V9  1  0.250  0.754  0.750  1.0
  Si  Si10  1  0.666  0.666  0.334  1.0
  Si  Si11  1  0.165  0.834  0.166  1.0
  Si  Si12  1  0.834  0.165  0.835  1.0
  Ge  Ge13  1  0.250  0.250  0.250  1.0
  Ge  Ge14  1  0.750  0.750  0.750  1.0
  Ge  Ge15  1  0.334  0.334  0.666  1.0
[/CIF]
.