The structure described by Ga3AsTe3 crystallizes in the orthorhombic Pmn2_1 space group. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one Te(2) and three equivalent Te(1) atoms to form GaTe4 tetrahedra that share  a cornercorner with one Ga(2)Te3As tetrahedra and corners with six equivalent Ga(1)Te4 tetrahedra. In the second Ga site, Ga(2) is bonded to one As(1), one Te(2), and two equivalent Te(3) atoms to form GaTe3As tetrahedra that share  a cornercorner with one Ga(1)Te4 tetrahedra, corners with two equivalent Ga(2)Te3As tetrahedra, and corners with five equivalent Ga(3)TeAs3 tetrahedra. In the third Ga site, Ga(3) is bonded to three equivalent As(1) and one Te(3) atom to form GaTeAs3 tetrahedra that share corners with five equivalent Ga(2)Te3As tetrahedra and corners with six equivalent Ga(3)TeAs3 tetrahedra. As(1) is bonded to one Ga(2) and three equivalent Ga(3) atoms to form corner-sharing AsGa4 tetrahedra. There are three inequivalent Te sites. In the first Te site, Te(1) is bonded in a trigonal non-coplanar geometry to three equivalent Ga(1) atoms. In the second Te site, Te(2) is bonded in a water-like geometry to one Ga(1) and one Ga(2) atom. In the third Te site, Te(3) is bonded in a trigonal non-coplanar geometry to one Ga(3) and two equivalent Ga(2) atoms. is represented by the CIF card [CIF]
data_Ga3Te3As
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.153
_cell_length_b   6.046
_cell_length_c   16.836
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   422.734
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.490  0.933  1.0
  Ga  Ga1  1  0.000  0.990  0.067  1.0
  Ga  Ga2  1  0.000  0.983  0.316  1.0
  Ga  Ga3  1  0.500  0.508  0.444  1.0
  Ga  Ga4  1  0.000  0.008  0.556  1.0
  Ga  Ga5  1  0.500  0.483  0.684  1.0
  Te  Te6  1  0.000  0.770  0.929  1.0
  Te  Te7  1  0.500  0.270  0.071  1.0
  Te  Te8  1  0.000  0.733  0.190  1.0
  Te  Te9  1  0.500  0.268  0.309  1.0
  Te  Te10  1  0.000  0.767  0.691  1.0
  Te  Te11  1  0.500  0.233  0.810  1.0
  As  As12  1  0.000  0.748  0.439  1.0
  As  As13  1  0.500  0.248  0.561  1.0
[/CIF]
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The structure described by Ga3AsTe3 crystallizes in the orthorhombic Pmn2_1 space group. There are three inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one Te(2) and three equivalent Te(1) atoms to form GaTe4 tetrahedra that share  a cornercorner with one Ga(2)Te3As tetrahedra and corners with six equivalent Ga(1)Te4 tetrahedra. In the second Ga site, Ga(2) is bonded to one As(1), one Te(2), and two equivalent Te(3) atoms to form GaTe3As tetrahedra that share  a cornercorner with one Ga(1)Te4 tetrahedra, corners with two equivalent Ga(2)Te3As tetrahedra, and corners with five equivalent Ga(3)TeAs3 tetrahedra. In the third Ga site, Ga(3) is bonded to three equivalent As(1) and one Te(3) atom to form GaTeAs3 tetrahedra that share corners with five equivalent Ga(2)Te3As tetrahedra and corners with six equivalent Ga(3)TeAs3 tetrahedra. As(1) is bonded to one Ga(2) and three equivalent Ga(3) atoms to form corner-sharing AsGa4 tetrahedra. There are three inequivalent Te sites. In the first Te site, Te(1) is bonded in a trigonal non-coplanar geometry to three equivalent Ga(1) atoms. In the second Te site, Te(2) is bonded in a water-like geometry to one Ga(1) and one Ga(2) atom. In the third Te site, Te(3) is bonded in a trigonal non-coplanar geometry to one Ga(3) and two equivalent Ga(2) atoms. is represented by the CIF card [CIF]
data_Ga3Te3As
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.153
_cell_length_b   6.046
_cell_length_c   16.836
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   422.734
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.490  0.933  1.0
  Ga  Ga1  1  0.000  0.990  0.067  1.0
  Ga  Ga2  1  0.000  0.983  0.316  1.0
  Ga  Ga3  1  0.500  0.508  0.444  1.0
  Ga  Ga4  1  0.000  0.008  0.556  1.0
  Ga  Ga5  1  0.500  0.483  0.684  1.0
  Te  Te6  1  0.000  0.770  0.929  1.0
  Te  Te7  1  0.500  0.270  0.071  1.0
  Te  Te8  1  0.000  0.733  0.190  1.0
  Te  Te9  1  0.500  0.268  0.309  1.0
  Te  Te10  1  0.000  0.767  0.691  1.0
  Te  Te11  1  0.500  0.233  0.810  1.0
  As  As12  1  0.000  0.748  0.439  1.0
  As  As13  1  0.500  0.248  0.561  1.0
[/CIF]
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