The compound described by BaLa2(SiS4)2 crystallizes in the monoclinic Cc space group. Ba(1) is bonded in a 8-coordinate geometry to one S(1), one S(2), one S(3), one S(6), one S(7), one S(8), and two equivalent S(5) atoms. There are two inequivalent La sites. In the first La site, La(1) is bonded in a 8-coordinate geometry to one S(3), one S(4), one S(5), one S(6), one S(7), one S(8), and two equivalent S(2) atoms. In the second La site, La(2) is bonded in a 8-coordinate geometry to one S(3), one S(6), one S(7), one S(8), two equivalent S(1), and two equivalent S(4) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a tetrahedral geometry to one S(1), one S(2), one S(3), and one S(8) atom. In the second Si site, Si(2) is bonded in a tetrahedral geometry to one S(4), one S(5), one S(6), and one S(7) atom. There are eight inequivalent S sites. In the first S site, S(7) is bonded to one Ba(1), one La(1), one La(2), and one Si(2) atom to form SBaLa2Si trigonal pyramids that share corners with two equivalent S(5)Ba2LaSi trigonal pyramids, corners with three equivalent S(1)BaLa2Si trigonal pyramids, corners with three equivalent S(3)BaLa2Si trigonal pyramids, corners with three equivalent S(8)BaLa2Si trigonal pyramids, and  an edgeedge with one S(5)Ba2LaSi trigonal pyramid. In the second S site, S(8) is bonded to one Ba(1), one La(1), one La(2), and one Si(1) atom to form SBaLa2Si trigonal pyramids that share corners with two equivalent S(1)BaLa2Si trigonal pyramids, corners with two equivalent S(3)BaLa2Si trigonal pyramids, corners with three equivalent S(5)Ba2LaSi trigonal pyramids, corners with three equivalent S(7)BaLa2Si trigonal pyramids,  an edgeedge with one S(1)BaLa2Si trigonal pyramid, and  an edgeedge with one S(3)BaLa2Si trigonal pyramid. In the third S site, S(1) is bonded to one Ba(1), two equivalent La(2), and one Si(1) atom to form distorted SBaLa2Si trigonal pyramids that share corners with two equivalent S(5)Ba2LaSi trigonal pyramids, corners with two equivalent S(1)BaLa2Si trigonal pyramids, corners with two equivalent S(3)BaLa2Si trigonal pyramids, corners with two equivalent S(8)BaLa2Si trigonal pyramids, corners with three equivalent S(7)BaLa2Si trigonal pyramids,  an edgeedge with one S(3)BaLa2Si trigonal pyramid, and  an edgeedge with one S(8)BaLa2Si trigonal pyramid. In the fourth S site, S(2) is bonded in a 3-coordinate geometry to one Ba(1), two equivalent La(1), and one Si(1) atom. In the fifth S site, S(3) is bonded to one Ba(1), one La(1), one La(2), and one Si(1) atom to form distorted SBaLa2Si trigonal pyramids that share corners with two equivalent S(1)BaLa2Si trigonal pyramids, corners with two equivalent S(8)BaLa2Si trigonal pyramids, corners with three equivalent S(5)Ba2LaSi trigonal pyramids, corners with three equivalent S(7)BaLa2Si trigonal pyramids,  an edgeedge with one S(1)BaLa2Si trigonal pyramid, and  an edgeedge with one S(8)BaLa2Si trigonal pyramid. In the sixth S site, S(4) is bonded in a 4-coordinate geometry to one La(1), two equivalent La(2), and one Si(2) atom. In the seventh S site, S(5) is bonded to two equivalent Ba(1), one La(1), and one Si(2) atom to form distorted SBa2LaSi trigonal pyramids that share corners with two equivalent S(5)Ba2LaSi trigonal pyramids, corners with two equivalent S(1)BaLa2Si trigonal pyramids, corners with two equivalent S(7)BaLa2Si trigonal pyramids, corners with three equivalent S(3)BaLa2Si trigonal pyramids, corners with three equivalent S(8)BaLa2Si trigonal pyramids, and  an edgeedge with one S(7)BaLa2Si trigonal pyramid. In the eighth S site, S(6) is bonded in a 4-coordinate geometry to one Ba(1), one La(1), one La(2), and one Si(2) atom. is represented by the CIF card [CIF]
data_BaLa2(SiS4)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.324
_cell_length_b   9.247
_cell_length_c   10.668
_cell_angle_alpha   89.385
_cell_angle_beta   115.914
_cell_angle_gamma   59.723
_symmetry_Int_Tables_number   1
_cell_volume   682.027
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.505  0.916  0.252  1.0
  Ba  Ba1  1  0.831  0.416  0.752  1.0
  La  La2  1  0.190  0.560  0.249  1.0
  La  La3  1  0.810  0.248  0.248  1.0
  La  La4  1  0.499  0.060  0.749  1.0
  La  La5  1  0.191  0.748  0.748  1.0
  Si  Si6  1  0.678  0.155  0.520  1.0
  Si  Si7  1  0.687  0.655  0.020  1.0
  Si  Si8  1  0.307  0.847  0.480  1.0
  Si  Si9  1  0.326  0.347  0.980  1.0
  S  S10  1  0.836  0.955  0.447  1.0
  S  S11  1  0.394  0.226  0.454  1.0
  S  S12  1  0.639  0.387  0.426  1.0
  S  S13  1  0.833  0.726  0.954  1.0
  S  S14  1  0.655  0.455  0.947  1.0
  S  S15  1  0.400  0.887  0.926  1.0
  S  S16  1  0.159  0.060  0.552  1.0
  S  S17  1  0.585  0.798  0.568  1.0
  S  S18  1  0.327  0.619  0.553  1.0
  S  S19  1  0.185  0.298  0.068  1.0
  S  S20  1  0.334  0.560  0.052  1.0
  S  S21  1  0.607  0.119  0.053  1.0
  S  S22  1  0.143  0.920  0.247  1.0
  S  S23  1  0.184  0.420  0.747  1.0
  S  S24  1  0.840  0.058  0.754  1.0
  S  S25  1  0.856  0.557  0.254  1.0
[/CIF]
.
The compound described by BaLa2(SiS4)2 crystallizes in the monoclinic Cc space group. Ba(1) is bonded in a 8-coordinate geometry to one S(1), one S(2), one S(3), one S(6), one S(7), one S(8), and two equivalent S(5) atoms. There are two inequivalent La sites. In the first La site, La(1) is bonded in a 8-coordinate geometry to one S(3), one S(4), one S(5), one S(6), one S(7), one S(8), and two equivalent S(2) atoms. In the second La site, La(2) is bonded in a 8-coordinate geometry to one S(3), one S(6), one S(7), one S(8), two equivalent S(1), and two equivalent S(4) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a tetrahedral geometry to one S(1), one S(2), one S(3), and one S(8) atom. In the second Si site, Si(2) is bonded in a tetrahedral geometry to one S(4), one S(5), one S(6), and one S(7) atom. There are eight inequivalent S sites. In the first S site, S(7) is bonded to one Ba(1), one La(1), one La(2), and one Si(2) atom to form SBaLa2Si trigonal pyramids that share corners with two equivalent S(5)Ba2LaSi trigonal pyramids, corners with three equivalent S(1)BaLa2Si trigonal pyramids, corners with three equivalent S(3)BaLa2Si trigonal pyramids, corners with three equivalent S(8)BaLa2Si trigonal pyramids, and  an edgeedge with one S(5)Ba2LaSi trigonal pyramid. In the second S site, S(8) is bonded to one Ba(1), one La(1), one La(2), and one Si(1) atom to form SBaLa2Si trigonal pyramids that share corners with two equivalent S(1)BaLa2Si trigonal pyramids, corners with two equivalent S(3)BaLa2Si trigonal pyramids, corners with three equivalent S(5)Ba2LaSi trigonal pyramids, corners with three equivalent S(7)BaLa2Si trigonal pyramids,  an edgeedge with one S(1)BaLa2Si trigonal pyramid, and  an edgeedge with one S(3)BaLa2Si trigonal pyramid. In the third S site, S(1) is bonded to one Ba(1), two equivalent La(2), and one Si(1) atom to form distorted SBaLa2Si trigonal pyramids that share corners with two equivalent S(5)Ba2LaSi trigonal pyramids, corners with two equivalent S(1)BaLa2Si trigonal pyramids, corners with two equivalent S(3)BaLa2Si trigonal pyramids, corners with two equivalent S(8)BaLa2Si trigonal pyramids, corners with three equivalent S(7)BaLa2Si trigonal pyramids,  an edgeedge with one S(3)BaLa2Si trigonal pyramid, and  an edgeedge with one S(8)BaLa2Si trigonal pyramid. In the fourth S site, S(2) is bonded in a 3-coordinate geometry to one Ba(1), two equivalent La(1), and one Si(1) atom. In the fifth S site, S(3) is bonded to one Ba(1), one La(1), one La(2), and one Si(1) atom to form distorted SBaLa2Si trigonal pyramids that share corners with two equivalent S(1)BaLa2Si trigonal pyramids, corners with two equivalent S(8)BaLa2Si trigonal pyramids, corners with three equivalent S(5)Ba2LaSi trigonal pyramids, corners with three equivalent S(7)BaLa2Si trigonal pyramids,  an edgeedge with one S(1)BaLa2Si trigonal pyramid, and  an edgeedge with one S(8)BaLa2Si trigonal pyramid. In the sixth S site, S(4) is bonded in a 4-coordinate geometry to one La(1), two equivalent La(2), and one Si(2) atom. In the seventh S site, S(5) is bonded to two equivalent Ba(1), one La(1), and one Si(2) atom to form distorted SBa2LaSi trigonal pyramids that share corners with two equivalent S(5)Ba2LaSi trigonal pyramids, corners with two equivalent S(1)BaLa2Si trigonal pyramids, corners with two equivalent S(7)BaLa2Si trigonal pyramids, corners with three equivalent S(3)BaLa2Si trigonal pyramids, corners with three equivalent S(8)BaLa2Si trigonal pyramids, and  an edgeedge with one S(7)BaLa2Si trigonal pyramid. In the eighth S site, S(6) is bonded in a 4-coordinate geometry to one Ba(1), one La(1), one La(2), and one Si(2) atom. is represented by the CIF card [CIF]
data_BaLa2(SiS4)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.324
_cell_length_b   9.247
_cell_length_c   10.668
_cell_angle_alpha   89.385
_cell_angle_beta   115.914
_cell_angle_gamma   59.723
_symmetry_Int_Tables_number   1
_cell_volume   682.027
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.505  0.916  0.252  1.0
  Ba  Ba1  1  0.831  0.416  0.752  1.0
  La  La2  1  0.190  0.560  0.249  1.0
  La  La3  1  0.810  0.248  0.248  1.0
  La  La4  1  0.499  0.060  0.749  1.0
  La  La5  1  0.191  0.748  0.748  1.0
  Si  Si6  1  0.678  0.155  0.520  1.0
  Si  Si7  1  0.687  0.655  0.020  1.0
  Si  Si8  1  0.307  0.847  0.480  1.0
  Si  Si9  1  0.326  0.347  0.980  1.0
  S  S10  1  0.836  0.955  0.447  1.0
  S  S11  1  0.394  0.226  0.454  1.0
  S  S12  1  0.639  0.387  0.426  1.0
  S  S13  1  0.833  0.726  0.954  1.0
  S  S14  1  0.655  0.455  0.947  1.0
  S  S15  1  0.400  0.887  0.926  1.0
  S  S16  1  0.159  0.060  0.552  1.0
  S  S17  1  0.585  0.798  0.568  1.0
  S  S18  1  0.327  0.619  0.553  1.0
  S  S19  1  0.185  0.298  0.068  1.0
  S  S20  1  0.334  0.560  0.052  1.0
  S  S21  1  0.607  0.119  0.053  1.0
  S  S22  1  0.143  0.920  0.247  1.0
  S  S23  1  0.184  0.420  0.747  1.0
  S  S24  1  0.840  0.058  0.754  1.0
  S  S25  1  0.856  0.557  0.254  1.0
[/CIF]
.