The crystal structure described by VSi7N10 crystallizes in the monoclinic Pc space group. V(1) is bonded in a 4-coordinate geometry to one N(1), one N(3), one N(4), and one N(7) atom. There are seven inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(2), one N(3), and one N(6) atom to form a mixture of edge and corner-sharing SiN4 tetrahedra. In the second Si site, Si(2) is bonded to one N(2), one N(3), one N(4), and one N(6) atom to form a mixture of edge and corner-sharing SiN4 tetrahedra. In the third Si site, Si(3) is bonded to one N(4), one N(5), one N(7), and one N(8) atom to form corner-sharing SiN4 tetrahedra. In the fourth Si site, Si(4) is bonded to one N(10), one N(2), one N(7), and one N(9) atom to form corner-sharing SiN4 tetrahedra. In the fifth Si site, Si(5) is bonded to one N(1), one N(7), one N(8), and one N(9) atom to form corner-sharing SiN4 tetrahedra. In the sixth Si site, Si(6) is bonded to one N(10), one N(3), one N(5), and one N(8) atom to form corner-sharing SiN4 tetrahedra. In the seventh Si site, Si(7) is bonded to one N(10), one N(5), one N(6), and one N(9) atom to form corner-sharing SiN4 tetrahedra. There are ten inequivalent N sites. In the first N site, N(9) is bonded in a trigonal planar geometry to one Si(4), one Si(5), and one Si(7) atom. In the second N site, N(10) is bonded in a trigonal planar geometry to one Si(4), one Si(6), and one Si(7) atom. In the third N site, N(1) is bonded in a 3-coordinate geometry to one V(1), one Si(1), and one Si(5) atom. In the fourth N site, N(2) is bonded in a distorted trigonal planar geometry to one Si(1), one Si(2), and one Si(4) atom. In the fifth N site, N(3) is bonded to one V(1), one Si(1), one Si(2), and one Si(6) atom to form distorted corner-sharing NVSi3 tetrahedra. In the sixth N site, N(4) is bonded in a distorted trigonal planar geometry to one V(1), one Si(2), and one Si(3) atom. In the seventh N site, N(5) is bonded in a trigonal planar geometry to one Si(3), one Si(6), and one Si(7) atom. In the eighth N site, N(6) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(7) atom. In the ninth N site, N(7) is bonded to one V(1), one Si(3), one Si(4), and one Si(5) atom to form distorted corner-sharing NVSi3 tetrahedra. In the tenth N site, N(8) is bonded in a trigonal planar geometry to one Si(3), one Si(5), and one Si(6) atom. is represented by the CIF card [CIF]
data_VSi7N10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.741
_cell_length_b   6.902
_cell_length_c   9.720
_cell_angle_alpha   90.000
_cell_angle_beta   105.426
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   435.929
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.997  0.918  0.702  1.0
  V  V1  1  0.997  0.082  0.202  1.0
  Si  Si2  1  0.539  0.979  0.822  1.0
  Si  Si3  1  0.539  0.021  0.322  1.0
  Si  Si4  1  0.350  0.022  0.018  1.0
  Si  Si5  1  0.350  0.978  0.518  1.0
  Si  Si6  1  0.112  0.399  0.072  1.0
  Si  Si7  1  0.112  0.602  0.572  1.0
  Si  Si8  1  0.660  0.360  0.990  1.0
  Si  Si9  1  0.660  0.640  0.490  1.0
  Si  Si10  1  0.843  0.619  0.810  1.0
  Si  Si11  1  0.843  0.381  0.310  1.0
  Si  Si12  1  0.297  0.618  0.881  1.0
  Si  Si13  1  0.297  0.382  0.381  1.0
  Si  Si14  1  0.485  0.367  0.685  1.0
  Si  Si15  1  0.485  0.633  0.185  1.0
  N  N16  1  0.743  0.843  0.814  1.0
  N  N17  1  0.743  0.157  0.314  1.0
  N  N18  1  0.556  0.133  0.969  1.0
  N  N19  1  0.556  0.867  0.469  1.0
  N  N20  1  0.307  0.871  0.861  1.0
  N  N21  1  0.307  0.129  0.361  1.0
  N  N22  1  0.156  0.161  0.042  1.0
  N  N23  1  0.156  0.839  0.542  1.0
  N  N24  1  0.288  0.504  0.722  1.0
  N  N25  1  0.288  0.496  0.222  1.0
  N  N26  1  0.446  0.121  0.669  1.0
  N  N27  1  0.446  0.879  0.169  1.0
  N  N28  1  0.886  0.370  0.132  1.0
  N  N29  1  0.886  0.630  0.632  1.0
  N  N30  1  0.077  0.568  0.935  1.0
  N  N31  1  0.077  0.432  0.435  1.0
  N  N32  1  0.700  0.415  0.824  1.0
  N  N33  1  0.700  0.585  0.324  1.0
  N  N34  1  0.500  0.541  0.021  1.0
  N  N35  1  0.500  0.459  0.521  1.0
[/CIF]
.
The crystal structure described by VSi7N10 crystallizes in the monoclinic Pc space group. V(1) is bonded in a 4-coordinate geometry to one N(1), one N(3), one N(4), and one N(7) atom. There are seven inequivalent Si sites. In the first Si site, Si(1) is bonded to one N(1), one N(2), one N(3), and one N(6) atom to form a mixture of edge and corner-sharing SiN4 tetrahedra. In the second Si site, Si(2) is bonded to one N(2), one N(3), one N(4), and one N(6) atom to form a mixture of edge and corner-sharing SiN4 tetrahedra. In the third Si site, Si(3) is bonded to one N(4), one N(5), one N(7), and one N(8) atom to form corner-sharing SiN4 tetrahedra. In the fourth Si site, Si(4) is bonded to one N(10), one N(2), one N(7), and one N(9) atom to form corner-sharing SiN4 tetrahedra. In the fifth Si site, Si(5) is bonded to one N(1), one N(7), one N(8), and one N(9) atom to form corner-sharing SiN4 tetrahedra. In the sixth Si site, Si(6) is bonded to one N(10), one N(3), one N(5), and one N(8) atom to form corner-sharing SiN4 tetrahedra. In the seventh Si site, Si(7) is bonded to one N(10), one N(5), one N(6), and one N(9) atom to form corner-sharing SiN4 tetrahedra. There are ten inequivalent N sites. In the first N site, N(9) is bonded in a trigonal planar geometry to one Si(4), one Si(5), and one Si(7) atom. In the second N site, N(10) is bonded in a trigonal planar geometry to one Si(4), one Si(6), and one Si(7) atom. In the third N site, N(1) is bonded in a 3-coordinate geometry to one V(1), one Si(1), and one Si(5) atom. In the fourth N site, N(2) is bonded in a distorted trigonal planar geometry to one Si(1), one Si(2), and one Si(4) atom. In the fifth N site, N(3) is bonded to one V(1), one Si(1), one Si(2), and one Si(6) atom to form distorted corner-sharing NVSi3 tetrahedra. In the sixth N site, N(4) is bonded in a distorted trigonal planar geometry to one V(1), one Si(2), and one Si(3) atom. In the seventh N site, N(5) is bonded in a trigonal planar geometry to one Si(3), one Si(6), and one Si(7) atom. In the eighth N site, N(6) is bonded in a trigonal planar geometry to one Si(1), one Si(2), and one Si(7) atom. In the ninth N site, N(7) is bonded to one V(1), one Si(3), one Si(4), and one Si(5) atom to form distorted corner-sharing NVSi3 tetrahedra. In the tenth N site, N(8) is bonded in a trigonal planar geometry to one Si(3), one Si(5), and one Si(6) atom. is represented by the CIF card [CIF]
data_VSi7N10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.741
_cell_length_b   6.902
_cell_length_c   9.720
_cell_angle_alpha   90.000
_cell_angle_beta   105.426
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   435.929
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.997  0.918  0.702  1.0
  V  V1  1  0.997  0.082  0.202  1.0
  Si  Si2  1  0.539  0.979  0.822  1.0
  Si  Si3  1  0.539  0.021  0.322  1.0
  Si  Si4  1  0.350  0.022  0.018  1.0
  Si  Si5  1  0.350  0.978  0.518  1.0
  Si  Si6  1  0.112  0.399  0.072  1.0
  Si  Si7  1  0.112  0.602  0.572  1.0
  Si  Si8  1  0.660  0.360  0.990  1.0
  Si  Si9  1  0.660  0.640  0.490  1.0
  Si  Si10  1  0.843  0.619  0.810  1.0
  Si  Si11  1  0.843  0.381  0.310  1.0
  Si  Si12  1  0.297  0.618  0.881  1.0
  Si  Si13  1  0.297  0.382  0.381  1.0
  Si  Si14  1  0.485  0.367  0.685  1.0
  Si  Si15  1  0.485  0.633  0.185  1.0
  N  N16  1  0.743  0.843  0.814  1.0
  N  N17  1  0.743  0.157  0.314  1.0
  N  N18  1  0.556  0.133  0.969  1.0
  N  N19  1  0.556  0.867  0.469  1.0
  N  N20  1  0.307  0.871  0.861  1.0
  N  N21  1  0.307  0.129  0.361  1.0
  N  N22  1  0.156  0.161  0.042  1.0
  N  N23  1  0.156  0.839  0.542  1.0
  N  N24  1  0.288  0.504  0.722  1.0
  N  N25  1  0.288  0.496  0.222  1.0
  N  N26  1  0.446  0.121  0.669  1.0
  N  N27  1  0.446  0.879  0.169  1.0
  N  N28  1  0.886  0.370  0.132  1.0
  N  N29  1  0.886  0.630  0.632  1.0
  N  N30  1  0.077  0.568  0.935  1.0
  N  N31  1  0.077  0.432  0.435  1.0
  N  N32  1  0.700  0.415  0.824  1.0
  N  N33  1  0.700  0.585  0.324  1.0
  N  N34  1  0.500  0.541  0.021  1.0
  N  N35  1  0.500  0.459  0.521  1.0
[/CIF]
.