The material described by Na3GaGeSi(PO6)2 crystallizes in the monoclinic Cc space group. There are three inequivalent Na sites. In the first Na site, Na(1) is bonded in a distorted hexagonal planar geometry to one O(1), one O(11), one O(12), one O(2), one O(5), and one O(6) atom. In the second Na site, Na(2) is bonded in a 8-coordinate geometry to one O(1), one O(10), one O(11), one O(12), one O(2), one O(7), one O(8), and one O(9) atom. In the third Na site, Na(3) is bonded in a 8-coordinate geometry to one O(10), one O(11), one O(2), one O(5), one O(6), one O(7), and two equivalent O(4) atoms. Ga(1) is bonded to one O(1), one O(11), one O(4), one O(5), one O(8), and one O(9) atom to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent P(1)O4 tetrahedra, and corners with two equivalent P(2)O4 tetrahedra. Ge(1) is bonded to one O(10), one O(12), one O(2), one O(3), one O(6), and one O(7) atom to form GeO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent P(1)O4 tetrahedra, and corners with two equivalent P(2)O4 tetrahedra. Si(1) is bonded to one O(1), one O(10), one O(6), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 20-39°. There are two inequivalent P sites. In the first P site, P(1) is bonded to one O(11), one O(12), one O(3), and one O(4) atom to form PO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 27-42°. In the second P site, P(2) is bonded to one O(2), one O(5), one O(7), and one O(9) atom to form PO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 27-37°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a rectangular see-saw-like geometry to one Na(1), one Na(2), one Ga(1), and one Si(1) atom. In the second O site, O(2) is bonded in a 5-coordinate geometry to one Na(1), one Na(2), one Na(3), one Ge(1), and one P(2) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Ge(1) and one P(1) atom. In the fourth O site, O(4) is bonded in a 2-coordinate geometry to two equivalent Na(3), one Ga(1), and one P(1) atom. In the fifth O site, O(5) is bonded in a distorted rectangular see-saw-like geometry to one Na(1), one Na(3), one Ga(1), and one P(2) atom. In the sixth O site, O(6) is bonded in a distorted trigonal pyramidal geometry to one Na(1), one Na(3), one Ge(1), and one Si(1) atom. In the seventh O site, O(7) is bonded in a 4-coordinate geometry to one Na(2), one Na(3), one Ge(1), and one P(2) atom. In the eighth O site, O(8) is bonded in a distorted bent 150 degrees geometry to one Na(2), one Ga(1), and one Si(1) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one Na(2), one Ga(1), and one P(2) atom. In the tenth O site, O(10) is bonded in a 3-coordinate geometry to one Na(2), one Na(3), one Ge(1), and one Si(1) atom. In the eleventh O site, O(11) is bonded in a 5-coordinate geometry to one Na(1), one Na(2), one Na(3), one Ga(1), and one P(1) atom. In the twelfth O site, O(12) is bonded in a distorted rectangular see-saw-like geometry to one Na(1), one Na(2), one Ge(1), and one P(1) atom. is represented by the CIF card [CIF]
data_Na3GaSiGe(PO6)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.724
_cell_length_b   8.724
_cell_length_c   8.772
_cell_angle_alpha   90.626
_cell_angle_beta   119.379
_cell_angle_gamma   119.719
_symmetry_Int_Tables_number   1
_cell_volume   475.938
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.715  0.364  0.562  1.0
  Ga  Ga1  1  0.698  0.847  0.062  1.0
  Ge  Ge2  1  0.283  0.138  0.939  1.0
  Ge  Ge3  1  0.301  0.656  0.439  1.0
  Na  Na4  1  0.015  0.522  0.995  1.0
  Na  Na5  1  0.973  0.980  0.495  1.0
  Na  Na6  1  0.137  0.390  0.757  1.0
  Na  Na7  1  0.867  0.619  0.257  1.0
  Na  Na8  1  0.155  0.250  0.278  1.0
  Na  Na9  1  0.528  0.123  0.778  1.0
  O  O10  1  0.011  0.574  0.738  1.0
  O  O11  1  0.334  0.277  0.761  1.0
  O  O12  1  0.984  0.427  0.261  1.0
  O  O13  1  0.664  0.727  0.238  1.0
  O  O14  1  0.589  0.863  0.577  1.0
  O  O15  1  0.810  0.010  0.932  1.0
  O  O16  1  0.422  0.122  0.432  1.0
  O  O17  1  0.213  0.988  0.077  1.0
  O  O18  1  0.648  0.416  0.740  1.0
  O  O19  1  0.213  0.946  0.767  1.0
  O  O20  1  0.321  0.554  0.267  1.0
  O  O21  1  0.824  0.092  0.240  1.0
  O  O22  1  0.361  0.492  0.583  1.0
  O  O23  1  0.425  0.787  0.920  1.0
  O  O24  1  0.633  0.495  0.420  1.0
  O  O25  1  0.591  0.222  0.083  1.0
  O  O26  1  0.652  0.623  0.937  1.0
  O  O27  1  0.206  0.727  0.556  1.0
  O  O28  1  0.329  0.350  0.056  1.0
  O  O29  1  0.813  0.285  0.437  1.0
  O  O30  1  0.808  0.216  0.743  1.0
  O  O31  1  0.986  0.057  0.755  1.0
  O  O32  1  0.198  0.769  0.255  1.0
  O  O33  1  0.027  0.935  0.243  1.0
  P  P34  1  0.796  0.034  0.754  1.0
  P  P35  1  0.221  0.959  0.254  1.0
  P  P36  1  0.506  0.460  0.756  1.0
  P  P37  1  0.796  0.251  0.256  1.0
  Si  Si38  1  0.210  0.754  0.749  1.0
  Si  Si39  1  0.494  0.539  0.249  1.0
[/CIF]
.
The material described by Na3GaGeSi(PO6)2 crystallizes in the monoclinic Cc space group. There are three inequivalent Na sites. In the first Na site, Na(1) is bonded in a distorted hexagonal planar geometry to one O(1), one O(11), one O(12), one O(2), one O(5), and one O(6) atom. In the second Na site, Na(2) is bonded in a 8-coordinate geometry to one O(1), one O(10), one O(11), one O(12), one O(2), one O(7), one O(8), and one O(9) atom. In the third Na site, Na(3) is bonded in a 8-coordinate geometry to one O(10), one O(11), one O(2), one O(5), one O(6), one O(7), and two equivalent O(4) atoms. Ga(1) is bonded to one O(1), one O(11), one O(4), one O(5), one O(8), and one O(9) atom to form GaO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent P(1)O4 tetrahedra, and corners with two equivalent P(2)O4 tetrahedra. Ge(1) is bonded to one O(10), one O(12), one O(2), one O(3), one O(6), and one O(7) atom to form GeO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent P(1)O4 tetrahedra, and corners with two equivalent P(2)O4 tetrahedra. Si(1) is bonded to one O(1), one O(10), one O(6), and one O(8) atom to form SiO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 20-39°. There are two inequivalent P sites. In the first P site, P(1) is bonded to one O(11), one O(12), one O(3), and one O(4) atom to form PO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 27-42°. In the second P site, P(2) is bonded to one O(2), one O(5), one O(7), and one O(9) atom to form PO4 tetrahedra that share corners with two equivalent Ga(1)O6 octahedra and corners with two equivalent Ge(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 27-37°. There are twelve inequivalent O sites. In the first O site, O(1) is bonded in a rectangular see-saw-like geometry to one Na(1), one Na(2), one Ga(1), and one Si(1) atom. In the second O site, O(2) is bonded in a 5-coordinate geometry to one Na(1), one Na(2), one Na(3), one Ge(1), and one P(2) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Ge(1) and one P(1) atom. In the fourth O site, O(4) is bonded in a 2-coordinate geometry to two equivalent Na(3), one Ga(1), and one P(1) atom. In the fifth O site, O(5) is bonded in a distorted rectangular see-saw-like geometry to one Na(1), one Na(3), one Ga(1), and one P(2) atom. In the sixth O site, O(6) is bonded in a distorted trigonal pyramidal geometry to one Na(1), one Na(3), one Ge(1), and one Si(1) atom. In the seventh O site, O(7) is bonded in a 4-coordinate geometry to one Na(2), one Na(3), one Ge(1), and one P(2) atom. In the eighth O site, O(8) is bonded in a distorted bent 150 degrees geometry to one Na(2), one Ga(1), and one Si(1) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one Na(2), one Ga(1), and one P(2) atom. In the tenth O site, O(10) is bonded in a 3-coordinate geometry to one Na(2), one Na(3), one Ge(1), and one Si(1) atom. In the eleventh O site, O(11) is bonded in a 5-coordinate geometry to one Na(1), one Na(2), one Na(3), one Ga(1), and one P(1) atom. In the twelfth O site, O(12) is bonded in a distorted rectangular see-saw-like geometry to one Na(1), one Na(2), one Ge(1), and one P(1) atom. is represented by the CIF card [CIF]
data_Na3GaSiGe(PO6)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.724
_cell_length_b   8.724
_cell_length_c   8.772
_cell_angle_alpha   90.626
_cell_angle_beta   119.379
_cell_angle_gamma   119.719
_symmetry_Int_Tables_number   1
_cell_volume   475.938
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.715  0.364  0.562  1.0
  Ga  Ga1  1  0.698  0.847  0.062  1.0
  Ge  Ge2  1  0.283  0.138  0.939  1.0
  Ge  Ge3  1  0.301  0.656  0.439  1.0
  Na  Na4  1  0.015  0.522  0.995  1.0
  Na  Na5  1  0.973  0.980  0.495  1.0
  Na  Na6  1  0.137  0.390  0.757  1.0
  Na  Na7  1  0.867  0.619  0.257  1.0
  Na  Na8  1  0.155  0.250  0.278  1.0
  Na  Na9  1  0.528  0.123  0.778  1.0
  O  O10  1  0.011  0.574  0.738  1.0
  O  O11  1  0.334  0.277  0.761  1.0
  O  O12  1  0.984  0.427  0.261  1.0
  O  O13  1  0.664  0.727  0.238  1.0
  O  O14  1  0.589  0.863  0.577  1.0
  O  O15  1  0.810  0.010  0.932  1.0
  O  O16  1  0.422  0.122  0.432  1.0
  O  O17  1  0.213  0.988  0.077  1.0
  O  O18  1  0.648  0.416  0.740  1.0
  O  O19  1  0.213  0.946  0.767  1.0
  O  O20  1  0.321  0.554  0.267  1.0
  O  O21  1  0.824  0.092  0.240  1.0
  O  O22  1  0.361  0.492  0.583  1.0
  O  O23  1  0.425  0.787  0.920  1.0
  O  O24  1  0.633  0.495  0.420  1.0
  O  O25  1  0.591  0.222  0.083  1.0
  O  O26  1  0.652  0.623  0.937  1.0
  O  O27  1  0.206  0.727  0.556  1.0
  O  O28  1  0.329  0.350  0.056  1.0
  O  O29  1  0.813  0.285  0.437  1.0
  O  O30  1  0.808  0.216  0.743  1.0
  O  O31  1  0.986  0.057  0.755  1.0
  O  O32  1  0.198  0.769  0.255  1.0
  O  O33  1  0.027  0.935  0.243  1.0
  P  P34  1  0.796  0.034  0.754  1.0
  P  P35  1  0.221  0.959  0.254  1.0
  P  P36  1  0.506  0.460  0.756  1.0
  P  P37  1  0.796  0.251  0.256  1.0
  Si  Si38  1  0.210  0.754  0.749  1.0
  Si  Si39  1  0.494  0.539  0.249  1.0
[/CIF]
.