The compound described by GaAsO4 is Hydrophilite-derived structured and crystallizes in the monoclinic C2 space group. There are five inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(12), one O(15), one O(17), one O(2), one O(6), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Ga(4)O6 octahedra,  a cornercorner with one As(5)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent As(1)O6 octahedra, corners with two equivalent As(2)O6 octahedra, corners with two equivalent As(4)O6 octahedra, and  an edgeedge with one As(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 47-56°. In the second Ga site, Ga(2) is bonded to one O(1), one O(11), one O(14), one O(3), one O(4), and one O(7) atom to form GaO6 octahedra that share  a cornercorner with one Ga(4)O6 octahedra,  a cornercorner with one As(5)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent As(1)O6 octahedra, corners with two equivalent As(2)O6 octahedra, corners with two equivalent As(4)O6 octahedra, and  an edgeedge with one As(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 49-56°. In the third Ga site, Ga(3) is bonded to one O(10), one O(13), one O(16), one O(18), one O(5), and one O(9) atom to form GaO6 octahedra that share  a cornercorner with one Ga(4)O6 octahedra,  a cornercorner with one As(5)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent As(1)O6 octahedra, corners with two equivalent As(2)O6 octahedra, corners with two equivalent As(4)O6 octahedra, and  an edgeedge with one As(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-54°. In the fourth Ga site, Ga(4) is bonded to two equivalent O(1), two equivalent O(12), and two equivalent O(13) atoms to form GaO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent As(3)O6 octahedra, and edges with two equivalent As(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 51-53°. In the fifth Ga site, Ga(5) is bonded to one O(10), one O(11), one O(14), one O(15), one O(16), and one O(17) atom to form GaO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent As(3)O6 octahedra,  an edgeedge with one As(2)O6 octahedra, and  an edgeedge with one As(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 47-56°. There are five inequivalent As sites. In the first As site, As(1) is bonded to one O(2), one O(3), one O(4), one O(5), one O(8), and one O(9) atom to form AsO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent As(3)O6 octahedra,  an edgeedge with one As(2)O6 octahedra, and  an edgeedge with one As(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 49-54°. In the second As site, As(2) is bonded to one O(10), one O(11), one O(5), one O(6), one O(7), and one O(8) atom to form AsO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra,  an edgeedge with one As(1)O6 octahedra, and  an edgeedge with one As(5)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-56°. In the third As site, As(3) is bonded to one O(12), one O(14), one O(17), one O(18), one O(4), and one O(9) atom to form AsO6 octahedra that share  a cornercorner with one Ga(4)O6 octahedra,  a cornercorner with one As(5)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent As(1)O6 octahedra,  an edgeedge with one Ga(1)O6 octahedra,  an edgeedge with one Ga(2)O6 octahedra, and  an edgeedge with one Ga(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-56°. In the fourth As site, As(4) is bonded to one O(1), one O(13), one O(15), one O(16), one O(2), and one O(3) atom to form AsO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  an edgeedge with one Ga(4)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra, and  an edgeedge with one As(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-56°. In the fifth As site, As(5) is bonded to two equivalent O(18), two equivalent O(6), and two equivalent O(7) atoms to form AsO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent As(3)O6 octahedra, and edges with two equivalent As(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-53°. There are eighteen inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to one Ga(2), one Ga(4), and one As(4) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Ga(1), one As(1), and one As(4) atom. In the third O site, O(3) is bonded in a distorted trigonal planar geometry to one Ga(2), one As(1), and one As(4) atom. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one Ga(2), one As(1), and one As(3) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Ga(3), one As(1), and one As(2) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Ga(1), one As(2), and one As(5) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to one Ga(2), one As(2), and one As(5) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ga(1), one As(1), and one As(2) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one Ga(3), one As(1), and one As(3) atom. In the tenth O site, O(10) is bonded in a distorted trigonal planar geometry to one Ga(3), one Ga(5), and one As(2) atom. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one Ga(2), one Ga(5), and one As(2) atom. In the twelfth O site, O(12) is bonded in a trigonal planar geometry to one Ga(1), one Ga(4), and one As(3) atom. In the thirteenth O site, O(13) is bonded in a trigonal planar geometry to one Ga(3), one Ga(4), and one As(4) atom. In the fourteenth O site, O(14) is bonded in a trigonal planar geometry to one Ga(2), one Ga(5), and one As(3) atom. In the fifteenth O site, O(15) is bonded in a distorted trigonal planar geometry to one Ga(1), one Ga(5), and one As(4) atom. In the sixteenth O site, O(16) is bonded in a trigonal planar geometry to one Ga(3), one Ga(5), and one As(4) atom. In the seventeenth O site, O(17) is bonded in a trigonal planar geometry to one Ga(1), one Ga(5), and one As(3) atom. In the eighteenth O site, O(18) is bonded in a distorted trigonal planar geometry to one Ga(3), one As(3), and one As(5) atom. is represented by the CIF file [CIF]
data_GaAsO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.445
_cell_length_b   9.445
_cell_length_c   8.933
_cell_angle_alpha   61.876
_cell_angle_beta   61.876
_cell_angle_gamma   52.205
_symmetry_Int_Tables_number   1
_cell_volume   536.060
_cell_formula_units_Z   9
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.339  0.305  0.426  1.0
  Ga  Ga1  1  0.964  0.020  0.258  1.0
  Ga  Ga2  1  0.695  0.661  0.574  1.0
  Ga  Ga3  1  0.327  0.306  0.938  1.0
  Ga  Ga4  1  0.980  0.036  0.742  1.0
  Ga  Ga5  1  0.694  0.673  0.062  1.0
  Ga  Ga6  1  0.639  0.361  0.000  1.0
  Ga  Ga7  1  0.037  0.667  0.652  1.0
  Ga  Ga8  1  0.333  0.963  0.348  1.0
  As  As9  1  0.333  0.980  0.847  1.0
  As  As10  1  0.673  0.997  0.676  1.0
  As  As11  1  0.328  0.661  0.254  1.0
  As  As12  1  0.996  0.342  0.826  1.0
  As  As13  1  0.658  0.004  0.174  1.0
  As  As14  1  0.638  0.362  0.500  1.0
  As  As15  1  0.020  0.667  0.153  1.0
  As  As16  1  0.003  0.327  0.324  1.0
  As  As17  1  0.339  0.672  0.746  1.0
  O  O18  1  0.878  0.246  0.819  1.0
  O  O19  1  0.754  0.122  0.181  1.0
  O  O20  1  0.221  0.201  0.672  1.0
  O  O21  1  0.114  0.112  0.994  1.0
  O  O22  1  0.799  0.779  0.328  1.0
  O  O23  1  0.114  0.774  0.182  1.0
  O  O24  1  0.226  0.886  0.818  1.0
  O  O25  1  0.451  0.085  0.852  1.0
  O  O26  1  0.559  0.221  0.507  1.0
  O  O27  1  0.863  0.251  0.323  1.0
  O  O28  1  0.749  0.137  0.677  1.0
  O  O29  1  0.554  0.897  0.671  1.0
  O  O30  1  0.444  0.770  0.026  1.0
  O  O31  1  0.208  0.206  0.170  1.0
  O  O32  1  0.876  0.898  0.505  1.0
  O  O33  1  0.548  0.570  0.805  1.0
  O  O34  1  0.430  0.452  0.195  1.0
  O  O35  1  0.102  0.124  0.495  1.0
  O  O36  1  0.794  0.792  0.830  1.0
  O  O37  1  0.789  0.445  0.997  1.0
  O  O38  1  0.125  0.792  0.687  1.0
  O  O39  1  0.208  0.875  0.313  1.0
  O  O40  1  0.455  0.087  0.352  1.0
  O  O41  1  0.555  0.211  0.003  1.0
  O  O42  1  0.913  0.545  0.648  1.0
  O  O43  1  0.565  0.886  0.165  1.0
  O  O44  1  0.455  0.764  0.530  1.0
  O  O45  1  0.236  0.545  0.470  1.0
  O  O46  1  0.114  0.435  0.835  1.0
  O  O47  1  0.888  0.886  0.006  1.0
  O  O48  1  0.546  0.566  0.313  1.0
  O  O49  1  0.434  0.454  0.687  1.0
  O  O50  1  0.779  0.441  0.493  1.0
  O  O51  1  0.915  0.549  0.148  1.0
  O  O52  1  0.230  0.556  0.974  1.0
  O  O53  1  0.103  0.446  0.329  1.0
[/CIF]
.
The compound described by GaAsO4 is Hydrophilite-derived structured and crystallizes in the monoclinic C2 space group. There are five inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one O(12), one O(15), one O(17), one O(2), one O(6), and one O(8) atom to form GaO6 octahedra that share  a cornercorner with one Ga(4)O6 octahedra,  a cornercorner with one As(5)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent As(1)O6 octahedra, corners with two equivalent As(2)O6 octahedra, corners with two equivalent As(4)O6 octahedra, and  an edgeedge with one As(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 47-56°. In the second Ga site, Ga(2) is bonded to one O(1), one O(11), one O(14), one O(3), one O(4), and one O(7) atom to form GaO6 octahedra that share  a cornercorner with one Ga(4)O6 octahedra,  a cornercorner with one As(5)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent As(1)O6 octahedra, corners with two equivalent As(2)O6 octahedra, corners with two equivalent As(4)O6 octahedra, and  an edgeedge with one As(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 49-56°. In the third Ga site, Ga(3) is bonded to one O(10), one O(13), one O(16), one O(18), one O(5), and one O(9) atom to form GaO6 octahedra that share  a cornercorner with one Ga(4)O6 octahedra,  a cornercorner with one As(5)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent As(1)O6 octahedra, corners with two equivalent As(2)O6 octahedra, corners with two equivalent As(4)O6 octahedra, and  an edgeedge with one As(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-54°. In the fourth Ga site, Ga(4) is bonded to two equivalent O(1), two equivalent O(12), and two equivalent O(13) atoms to form GaO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent As(3)O6 octahedra, and edges with two equivalent As(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 51-53°. In the fifth Ga site, Ga(5) is bonded to one O(10), one O(11), one O(14), one O(15), one O(16), and one O(17) atom to form GaO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent As(3)O6 octahedra,  an edgeedge with one As(2)O6 octahedra, and  an edgeedge with one As(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 47-56°. There are five inequivalent As sites. In the first As site, As(1) is bonded to one O(2), one O(3), one O(4), one O(5), one O(8), and one O(9) atom to form AsO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent As(3)O6 octahedra,  an edgeedge with one As(2)O6 octahedra, and  an edgeedge with one As(4)O6 octahedra. The corner-sharing octahedral tilt angles range from 49-54°. In the second As site, As(2) is bonded to one O(10), one O(11), one O(5), one O(6), one O(7), and one O(8) atom to form AsO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra,  an edgeedge with one As(1)O6 octahedra, and  an edgeedge with one As(5)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-56°. In the third As site, As(3) is bonded to one O(12), one O(14), one O(17), one O(18), one O(4), and one O(9) atom to form AsO6 octahedra that share  a cornercorner with one Ga(4)O6 octahedra,  a cornercorner with one As(5)O6 octahedra, corners with two equivalent Ga(5)O6 octahedra, corners with two equivalent As(1)O6 octahedra,  an edgeedge with one Ga(1)O6 octahedra,  an edgeedge with one Ga(2)O6 octahedra, and  an edgeedge with one Ga(3)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-56°. In the fourth As site, As(4) is bonded to one O(1), one O(13), one O(15), one O(16), one O(2), and one O(3) atom to form AsO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra,  an edgeedge with one Ga(4)O6 octahedra,  an edgeedge with one Ga(5)O6 octahedra, and  an edgeedge with one As(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-56°. In the fifth As site, As(5) is bonded to two equivalent O(18), two equivalent O(6), and two equivalent O(7) atoms to form AsO6 octahedra that share corners with two equivalent Ga(1)O6 octahedra, corners with two equivalent Ga(2)O6 octahedra, corners with two equivalent Ga(3)O6 octahedra, corners with two equivalent As(3)O6 octahedra, and edges with two equivalent As(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 50-53°. There are eighteen inequivalent O sites. In the first O site, O(1) is bonded in a distorted trigonal planar geometry to one Ga(2), one Ga(4), and one As(4) atom. In the second O site, O(2) is bonded in a trigonal planar geometry to one Ga(1), one As(1), and one As(4) atom. In the third O site, O(3) is bonded in a distorted trigonal planar geometry to one Ga(2), one As(1), and one As(4) atom. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one Ga(2), one As(1), and one As(3) atom. In the fifth O site, O(5) is bonded in a trigonal planar geometry to one Ga(3), one As(1), and one As(2) atom. In the sixth O site, O(6) is bonded in a trigonal planar geometry to one Ga(1), one As(2), and one As(5) atom. In the seventh O site, O(7) is bonded in a trigonal planar geometry to one Ga(2), one As(2), and one As(5) atom. In the eighth O site, O(8) is bonded in a trigonal planar geometry to one Ga(1), one As(1), and one As(2) atom. In the ninth O site, O(9) is bonded in a trigonal planar geometry to one Ga(3), one As(1), and one As(3) atom. In the tenth O site, O(10) is bonded in a distorted trigonal planar geometry to one Ga(3), one Ga(5), and one As(2) atom. In the eleventh O site, O(11) is bonded in a trigonal planar geometry to one Ga(2), one Ga(5), and one As(2) atom. In the twelfth O site, O(12) is bonded in a trigonal planar geometry to one Ga(1), one Ga(4), and one As(3) atom. In the thirteenth O site, O(13) is bonded in a trigonal planar geometry to one Ga(3), one Ga(4), and one As(4) atom. In the fourteenth O site, O(14) is bonded in a trigonal planar geometry to one Ga(2), one Ga(5), and one As(3) atom. In the fifteenth O site, O(15) is bonded in a distorted trigonal planar geometry to one Ga(1), one Ga(5), and one As(4) atom. In the sixteenth O site, O(16) is bonded in a trigonal planar geometry to one Ga(3), one Ga(5), and one As(4) atom. In the seventeenth O site, O(17) is bonded in a trigonal planar geometry to one Ga(1), one Ga(5), and one As(3) atom. In the eighteenth O site, O(18) is bonded in a distorted trigonal planar geometry to one Ga(3), one As(3), and one As(5) atom. is represented by the CIF file [CIF]
data_GaAsO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   9.445
_cell_length_b   9.445
_cell_length_c   8.933
_cell_angle_alpha   61.876
_cell_angle_beta   61.876
_cell_angle_gamma   52.205
_symmetry_Int_Tables_number   1
_cell_volume   536.060
_cell_formula_units_Z   9
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.339  0.305  0.426  1.0
  Ga  Ga1  1  0.964  0.020  0.258  1.0
  Ga  Ga2  1  0.695  0.661  0.574  1.0
  Ga  Ga3  1  0.327  0.306  0.938  1.0
  Ga  Ga4  1  0.980  0.036  0.742  1.0
  Ga  Ga5  1  0.694  0.673  0.062  1.0
  Ga  Ga6  1  0.639  0.361  0.000  1.0
  Ga  Ga7  1  0.037  0.667  0.652  1.0
  Ga  Ga8  1  0.333  0.963  0.348  1.0
  As  As9  1  0.333  0.980  0.847  1.0
  As  As10  1  0.673  0.997  0.676  1.0
  As  As11  1  0.328  0.661  0.254  1.0
  As  As12  1  0.996  0.342  0.826  1.0
  As  As13  1  0.658  0.004  0.174  1.0
  As  As14  1  0.638  0.362  0.500  1.0
  As  As15  1  0.020  0.667  0.153  1.0
  As  As16  1  0.003  0.327  0.324  1.0
  As  As17  1  0.339  0.672  0.746  1.0
  O  O18  1  0.878  0.246  0.819  1.0
  O  O19  1  0.754  0.122  0.181  1.0
  O  O20  1  0.221  0.201  0.672  1.0
  O  O21  1  0.114  0.112  0.994  1.0
  O  O22  1  0.799  0.779  0.328  1.0
  O  O23  1  0.114  0.774  0.182  1.0
  O  O24  1  0.226  0.886  0.818  1.0
  O  O25  1  0.451  0.085  0.852  1.0
  O  O26  1  0.559  0.221  0.507  1.0
  O  O27  1  0.863  0.251  0.323  1.0
  O  O28  1  0.749  0.137  0.677  1.0
  O  O29  1  0.554  0.897  0.671  1.0
  O  O30  1  0.444  0.770  0.026  1.0
  O  O31  1  0.208  0.206  0.170  1.0
  O  O32  1  0.876  0.898  0.505  1.0
  O  O33  1  0.548  0.570  0.805  1.0
  O  O34  1  0.430  0.452  0.195  1.0
  O  O35  1  0.102  0.124  0.495  1.0
  O  O36  1  0.794  0.792  0.830  1.0
  O  O37  1  0.789  0.445  0.997  1.0
  O  O38  1  0.125  0.792  0.687  1.0
  O  O39  1  0.208  0.875  0.313  1.0
  O  O40  1  0.455  0.087  0.352  1.0
  O  O41  1  0.555  0.211  0.003  1.0
  O  O42  1  0.913  0.545  0.648  1.0
  O  O43  1  0.565  0.886  0.165  1.0
  O  O44  1  0.455  0.764  0.530  1.0
  O  O45  1  0.236  0.545  0.470  1.0
  O  O46  1  0.114  0.435  0.835  1.0
  O  O47  1  0.888  0.886  0.006  1.0
  O  O48  1  0.546  0.566  0.313  1.0
  O  O49  1  0.434  0.454  0.687  1.0
  O  O50  1  0.779  0.441  0.493  1.0
  O  O51  1  0.915  0.549  0.148  1.0
  O  O52  1  0.230  0.556  0.974  1.0
  O  O53  1  0.103  0.446  0.329  1.0
[/CIF]
.