The material described by InGaTe2 is I4/mcm-derived structured and crystallizes in the tetragonal I4/mcm space group. In(1) is bonded in a 10-coordinate geometry to two equivalent In(1) and eight equivalent Te(1) atoms. Ga(1) is bonded to four equivalent Te(1) atoms to form edge-sharing GaTe4 tetrahedra. Te(1) is bonded in a distorted L-shaped geometry to four equivalent In(1) and two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_InGaTe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.954
_cell_length_b   6.954
_cell_length_c   6.954
_cell_angle_alpha   103.914
_cell_angle_beta   103.914
_cell_angle_gamma   121.270
_symmetry_Int_Tables_number   1
_cell_volume   250.456
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.250  0.250  0.000  1.0
  In  In1  1  0.750  0.750  0.000  1.0
  Ga  Ga2  1  0.750  0.250  0.500  1.0
  Ga  Ga3  1  0.250  0.750  0.500  1.0
  Te  Te4  1  0.671  0.171  0.843  1.0
  Te  Te5  1  0.171  0.329  0.500  1.0
  Te  Te6  1  0.829  0.671  0.500  1.0
  Te  Te7  1  0.329  0.829  0.157  1.0
[/CIF]
.
The material described by InGaTe2 is I4/mcm-derived structured and crystallizes in the tetragonal I4/mcm space group. In(1) is bonded in a 10-coordinate geometry to two equivalent In(1) and eight equivalent Te(1) atoms. Ga(1) is bonded to four equivalent Te(1) atoms to form edge-sharing GaTe4 tetrahedra. Te(1) is bonded in a distorted L-shaped geometry to four equivalent In(1) and two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_InGaTe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.954
_cell_length_b   6.954
_cell_length_c   6.954
_cell_angle_alpha   103.914
_cell_angle_beta   103.914
_cell_angle_gamma   121.270
_symmetry_Int_Tables_number   1
_cell_volume   250.456
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.250  0.250  0.000  1.0
  In  In1  1  0.750  0.750  0.000  1.0
  Ga  Ga2  1  0.750  0.250  0.500  1.0
  Ga  Ga3  1  0.250  0.750  0.500  1.0
  Te  Te4  1  0.671  0.171  0.843  1.0
  Te  Te5  1  0.171  0.329  0.500  1.0
  Te  Te6  1  0.829  0.671  0.500  1.0
  Te  Te7  1  0.329  0.829  0.157  1.0
[/CIF]
.