The crystal structure described by AgGa(SO4)2 crystallizes in the monoclinic C2/m space group. Ag(1) is bonded in a distorted hexagonal planar geometry to two equivalent O(1) and four equivalent O(2) atoms. Ga(1) is bonded to two equivalent O(3) and four equivalent O(2) atoms to form GaO6 octahedra that share corners with six equivalent S(1)O4 tetrahedra. S(1) is bonded to one O(1), one O(3), and two equivalent O(2) atoms to form SO4 tetrahedra that share corners with three equivalent Ga(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 38-46°. There are three inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to one Ag(1) and one S(1) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to one Ag(1), one Ga(1), and one S(1) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Ga(1) and one S(1) atom. is represented by the CIF card [CIF]
data_GaAg(SO4)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.800
_cell_length_b   4.800
_cell_length_c   7.457
_cell_angle_alpha   87.846
_cell_angle_beta   87.846
_cell_angle_gamma   65.459
_symmetry_Int_Tables_number   1
_cell_volume   156.157
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.000  0.000  0.000  1.0
  Ag  Ag1  1  0.000  0.000  0.500  1.0
  S  S2  1  0.364  0.364  0.790  1.0
  S  S3  1  0.636  0.636  0.210  1.0
  O  O4  1  0.295  0.295  0.613  1.0
  O  O5  1  0.705  0.705  0.387  1.0
  O  O6  1  0.708  0.239  0.808  1.0
  O  O7  1  0.292  0.761  0.192  1.0
  O  O8  1  0.761  0.292  0.192  1.0
  O  O9  1  0.239  0.708  0.808  1.0
  O  O10  1  0.240  0.240  0.944  1.0
  O  O11  1  0.760  0.760  0.056  1.0
[/CIF]
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The crystal structure described by AgGa(SO4)2 crystallizes in the monoclinic C2/m space group. Ag(1) is bonded in a distorted hexagonal planar geometry to two equivalent O(1) and four equivalent O(2) atoms. Ga(1) is bonded to two equivalent O(3) and four equivalent O(2) atoms to form GaO6 octahedra that share corners with six equivalent S(1)O4 tetrahedra. S(1) is bonded to one O(1), one O(3), and two equivalent O(2) atoms to form SO4 tetrahedra that share corners with three equivalent Ga(1)O6 octahedra. The corner-sharing octahedral tilt angles range from 38-46°. There are three inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to one Ag(1) and one S(1) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to one Ag(1), one Ga(1), and one S(1) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one Ga(1) and one S(1) atom. is represented by the CIF card [CIF]
data_GaAg(SO4)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.800
_cell_length_b   4.800
_cell_length_c   7.457
_cell_angle_alpha   87.846
_cell_angle_beta   87.846
_cell_angle_gamma   65.459
_symmetry_Int_Tables_number   1
_cell_volume   156.157
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.000  0.000  0.000  1.0
  Ag  Ag1  1  0.000  0.000  0.500  1.0
  S  S2  1  0.364  0.364  0.790  1.0
  S  S3  1  0.636  0.636  0.210  1.0
  O  O4  1  0.295  0.295  0.613  1.0
  O  O5  1  0.705  0.705  0.387  1.0
  O  O6  1  0.708  0.239  0.808  1.0
  O  O7  1  0.292  0.761  0.192  1.0
  O  O8  1  0.761  0.292  0.192  1.0
  O  O9  1  0.239  0.708  0.808  1.0
  O  O10  1  0.240  0.240  0.944  1.0
  O  O11  1  0.760  0.760  0.056  1.0
[/CIF]
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