The material structure described by InGaN2 is Enargite-like structured and crystallizes in the trigonal P3m1 space group. In(1) is bonded to one N(2) and three equivalent N(1) atoms to form InN4 tetrahedra that share corners with six equivalent In(1)N4 tetrahedra and corners with six equivalent Ga(1)N4 tetrahedra. Ga(1) is bonded to one N(1) and three equivalent N(2) atoms to form GaN4 tetrahedra that share corners with six equivalent In(1)N4 tetrahedra and corners with six equivalent Ga(1)N4 tetrahedra. There are two inequivalent N sites. In the first N site, N(1) is bonded to three equivalent In(1) and one Ga(1) atom to form NIn3Ga tetrahedra that share corners with six equivalent N(1)In3Ga tetrahedra and corners with six equivalent N(2)InGa3 tetrahedra. In the second N site, N(2) is bonded to one In(1) and three equivalent Ga(1) atoms to form NInGa3 tetrahedra that share corners with six equivalent N(1)In3Ga tetrahedra and corners with six equivalent N(2)InGa3 tetrahedra. is represented by the CIF card [CIF]
data_InGaN2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.399
_cell_length_b   3.399
_cell_length_c   5.552
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   55.555
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.000  0.000  0.998  1.0
  Ga  Ga1  1  0.667  0.333  0.495  1.0
  N  N2  1  0.667  0.333  0.146  1.0
  N  N3  1  0.000  0.000  0.602  1.0
[/CIF]
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The material structure described by InGaN2 is Enargite-like structured and crystallizes in the trigonal P3m1 space group. In(1) is bonded to one N(2) and three equivalent N(1) atoms to form InN4 tetrahedra that share corners with six equivalent In(1)N4 tetrahedra and corners with six equivalent Ga(1)N4 tetrahedra. Ga(1) is bonded to one N(1) and three equivalent N(2) atoms to form GaN4 tetrahedra that share corners with six equivalent In(1)N4 tetrahedra and corners with six equivalent Ga(1)N4 tetrahedra. There are two inequivalent N sites. In the first N site, N(1) is bonded to three equivalent In(1) and one Ga(1) atom to form NIn3Ga tetrahedra that share corners with six equivalent N(1)In3Ga tetrahedra and corners with six equivalent N(2)InGa3 tetrahedra. In the second N site, N(2) is bonded to one In(1) and three equivalent Ga(1) atoms to form NInGa3 tetrahedra that share corners with six equivalent N(1)In3Ga tetrahedra and corners with six equivalent N(2)InGa3 tetrahedra. is represented by the CIF card [CIF]
data_InGaN2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.399
_cell_length_b   3.399
_cell_length_c   5.552
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   55.555
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.000  0.000  0.998  1.0
  Ga  Ga1  1  0.667  0.333  0.495  1.0
  N  N2  1  0.667  0.333  0.146  1.0
  N  N3  1  0.000  0.000  0.602  1.0
[/CIF]
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