The material structure described by SnGa2GeS6 crystallizes in the orthorhombic Fdd2 space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(1), one S(2), one S(5), and one S(6) atom to form GaS4 tetrahedra that share  a cornercorner with one Ge(1)S4 tetrahedra,  a cornercorner with one Ge(2)S4 tetrahedra, and corners with two equivalent Ga(2)S4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(2), one S(5), and two equivalent S(3) atoms to form corner-sharing GaS4 tetrahedra. Sn(1) is bonded in a rectangular see-saw-like geometry to one S(1), one S(3), one S(5), and one S(6) atom. There are two inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to two equivalent S(4) and two equivalent S(6) atoms to form GeS4 tetrahedra that share corners with two equivalent Ga(1)S4 tetrahedra and corners with two equivalent Ge(2)S4 tetrahedra. In the second Ge site, Ge(2) is bonded to two equivalent S(1) and two equivalent S(4) atoms to form GeS4 tetrahedra that share corners with two equivalent Ga(1)S4 tetrahedra and corners with two equivalent Ge(1)S4 tetrahedra. There are six inequivalent S sites. In the first S site, S(1) is bonded in a 3-coordinate geometry to one Ga(1), one Sn(1), and one Ge(2) atom. In the second S site, S(2) is bonded in a water-like geometry to one Ga(1) and one Ga(2) atom. In the third S site, S(3) is bonded in a distorted T-shaped geometry to two equivalent Ga(2) and one Sn(1) atom. In the fourth S site, S(4) is bonded in a water-like geometry to one Ge(1) and one Ge(2) atom. In the fifth S site, S(5) is bonded in a distorted water-like geometry to one Ga(1), one Ga(2), and one Sn(1) atom. In the sixth S site, S(6) is bonded in a distorted trigonal non-coplanar geometry to one Ga(1), one Sn(1), and one Ge(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga2SnGeS6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   23.655
_cell_length_b   23.160
_cell_length_c   7.038
_cell_angle_alpha   85.364
_cell_angle_beta   77.385
_cell_angle_gamma   17.251
_symmetry_Int_Tables_number   1
_cell_volume   1001.213
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.642  0.992  0.028  1.0
  Ga  Ga1  1  0.028  0.338  0.642  1.0
  Ga  Ga2  1  0.258  0.608  0.912  1.0
  Ga  Ga3  1  0.912  0.222  0.258  1.0
  Ga  Ga4  1  0.957  0.811  0.758  1.0
  Ga  Ga5  1  0.758  0.475  0.957  1.0
  Ga  Ga6  1  0.439  0.293  0.775  1.0
  Ga  Ga7  1  0.775  0.492  0.439  1.0
  Sn  Sn8  1  0.109  0.539  0.397  1.0
  Sn  Sn9  1  0.397  0.956  0.109  1.0
  Sn  Sn10  1  0.711  0.141  0.294  1.0
  Sn  Sn11  1  0.294  0.853  0.711  1.0
  Ge  Ge12  1  0.781  0.719  0.781  1.0
  Ge  Ge13  1  0.531  0.469  0.531  1.0
  Ge  Ge14  1  0.289  0.211  0.289  1.0
  Ge  Ge15  1  0.039  0.961  0.039  1.0
  S  S16  1  0.427  0.151  0.376  1.0
  S  S17  1  0.376  0.046  0.427  1.0
  S  S18  1  0.099  0.823  0.204  1.0
  S  S19  1  0.204  0.874  0.099  1.0
  S  S20  1  0.793  0.920  0.089  1.0
  S  S21  1  0.089  0.198  0.793  1.0
  S  S22  1  0.330  0.457  0.052  1.0
  S  S23  1  0.052  0.161  0.330  1.0
  S  S24  1  0.287  0.450  0.545  1.0
  S  S25  1  0.545  0.718  0.287  1.0
  S  S26  1  0.800  0.963  0.532  1.0
  S  S27  1  0.532  0.705  0.800  1.0
  S  S28  1  0.931  0.579  0.408  1.0
  S  S29  1  0.408  0.082  0.931  1.0
  S  S30  1  0.671  0.319  0.168  1.0
  S  S31  1  0.168  0.842  0.671  1.0
  S  S32  1  0.382  0.255  0.927  1.0
  S  S33  1  0.927  0.436  0.382  1.0
  S  S34  1  0.995  0.868  0.814  1.0
  S  S35  1  0.814  0.323  0.995  1.0
  S  S36  1  0.922  0.658  0.847  1.0
  S  S37  1  0.847  0.573  0.922  1.0
  S  S38  1  0.592  0.328  0.677  1.0
  S  S39  1  0.677  0.403  0.592  1.0
[/CIF]
.
The material structure described by SnGa2GeS6 crystallizes in the orthorhombic Fdd2 space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to one S(1), one S(2), one S(5), and one S(6) atom to form GaS4 tetrahedra that share  a cornercorner with one Ge(1)S4 tetrahedra,  a cornercorner with one Ge(2)S4 tetrahedra, and corners with two equivalent Ga(2)S4 tetrahedra. In the second Ga site, Ga(2) is bonded to one S(2), one S(5), and two equivalent S(3) atoms to form corner-sharing GaS4 tetrahedra. Sn(1) is bonded in a rectangular see-saw-like geometry to one S(1), one S(3), one S(5), and one S(6) atom. There are two inequivalent Ge sites. In the first Ge site, Ge(1) is bonded to two equivalent S(4) and two equivalent S(6) atoms to form GeS4 tetrahedra that share corners with two equivalent Ga(1)S4 tetrahedra and corners with two equivalent Ge(2)S4 tetrahedra. In the second Ge site, Ge(2) is bonded to two equivalent S(1) and two equivalent S(4) atoms to form GeS4 tetrahedra that share corners with two equivalent Ga(1)S4 tetrahedra and corners with two equivalent Ge(1)S4 tetrahedra. There are six inequivalent S sites. In the first S site, S(1) is bonded in a 3-coordinate geometry to one Ga(1), one Sn(1), and one Ge(2) atom. In the second S site, S(2) is bonded in a water-like geometry to one Ga(1) and one Ga(2) atom. In the third S site, S(3) is bonded in a distorted T-shaped geometry to two equivalent Ga(2) and one Sn(1) atom. In the fourth S site, S(4) is bonded in a water-like geometry to one Ge(1) and one Ge(2) atom. In the fifth S site, S(5) is bonded in a distorted water-like geometry to one Ga(1), one Ga(2), and one Sn(1) atom. In the sixth S site, S(6) is bonded in a distorted trigonal non-coplanar geometry to one Ga(1), one Sn(1), and one Ge(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga2SnGeS6
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   23.655
_cell_length_b   23.160
_cell_length_c   7.038
_cell_angle_alpha   85.364
_cell_angle_beta   77.385
_cell_angle_gamma   17.251
_symmetry_Int_Tables_number   1
_cell_volume   1001.213
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.642  0.992  0.028  1.0
  Ga  Ga1  1  0.028  0.338  0.642  1.0
  Ga  Ga2  1  0.258  0.608  0.912  1.0
  Ga  Ga3  1  0.912  0.222  0.258  1.0
  Ga  Ga4  1  0.957  0.811  0.758  1.0
  Ga  Ga5  1  0.758  0.475  0.957  1.0
  Ga  Ga6  1  0.439  0.293  0.775  1.0
  Ga  Ga7  1  0.775  0.492  0.439  1.0
  Sn  Sn8  1  0.109  0.539  0.397  1.0
  Sn  Sn9  1  0.397  0.956  0.109  1.0
  Sn  Sn10  1  0.711  0.141  0.294  1.0
  Sn  Sn11  1  0.294  0.853  0.711  1.0
  Ge  Ge12  1  0.781  0.719  0.781  1.0
  Ge  Ge13  1  0.531  0.469  0.531  1.0
  Ge  Ge14  1  0.289  0.211  0.289  1.0
  Ge  Ge15  1  0.039  0.961  0.039  1.0
  S  S16  1  0.427  0.151  0.376  1.0
  S  S17  1  0.376  0.046  0.427  1.0
  S  S18  1  0.099  0.823  0.204  1.0
  S  S19  1  0.204  0.874  0.099  1.0
  S  S20  1  0.793  0.920  0.089  1.0
  S  S21  1  0.089  0.198  0.793  1.0
  S  S22  1  0.330  0.457  0.052  1.0
  S  S23  1  0.052  0.161  0.330  1.0
  S  S24  1  0.287  0.450  0.545  1.0
  S  S25  1  0.545  0.718  0.287  1.0
  S  S26  1  0.800  0.963  0.532  1.0
  S  S27  1  0.532  0.705  0.800  1.0
  S  S28  1  0.931  0.579  0.408  1.0
  S  S29  1  0.408  0.082  0.931  1.0
  S  S30  1  0.671  0.319  0.168  1.0
  S  S31  1  0.168  0.842  0.671  1.0
  S  S32  1  0.382  0.255  0.927  1.0
  S  S33  1  0.927  0.436  0.382  1.0
  S  S34  1  0.995  0.868  0.814  1.0
  S  S35  1  0.814  0.323  0.995  1.0
  S  S36  1  0.922  0.658  0.847  1.0
  S  S37  1  0.847  0.573  0.922  1.0
  S  S38  1  0.592  0.328  0.677  1.0
  S  S39  1  0.677  0.403  0.592  1.0
[/CIF]
.