The material described by Ho2Si3 crystallizes in the orthorhombic Imm2 space group. There are two inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 8-coordinate geometry to two equivalent Si(1), two equivalent Si(3), and four equivalent Si(2) atoms. In the second Ho site, Ho(2) is bonded in a 10-coordinate geometry to two equivalent Si(2), four equivalent Si(1), and four equivalent Si(3) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 7-coordinate geometry to two equivalent Ho(1), four equivalent Ho(2), and one Si(3) atom. In the second Si site, Si(2) is bonded in a 8-coordinate geometry to two equivalent Ho(2), four equivalent Ho(1), and two equivalent Si(3) atoms. In the third Si site, Si(3) is bonded in a 9-coordinate geometry to two equivalent Ho(1), four equivalent Ho(2), one Si(1), and two equivalent Si(2) atoms. is represented by the CIF card [CIF]
data_Ho2Si3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.973
_cell_length_b   3.882
_cell_length_c   7.370
_cell_angle_alpha   74.733
_cell_angle_beta   74.365
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   105.283
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.873  0.623  0.755  1.0
  Ho  Ho1  1  0.118  0.368  0.264  1.0
  Si  Si2  1  0.714  0.964  0.072  1.0
  Si  Si3  1  0.442  0.192  0.615  1.0
  Si  Si4  1  0.543  0.793  0.413  1.0
[/CIF]
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The material described by Ho2Si3 crystallizes in the orthorhombic Imm2 space group. There are two inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 8-coordinate geometry to two equivalent Si(1), two equivalent Si(3), and four equivalent Si(2) atoms. In the second Ho site, Ho(2) is bonded in a 10-coordinate geometry to two equivalent Si(2), four equivalent Si(1), and four equivalent Si(3) atoms. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded in a 7-coordinate geometry to two equivalent Ho(1), four equivalent Ho(2), and one Si(3) atom. In the second Si site, Si(2) is bonded in a 8-coordinate geometry to two equivalent Ho(2), four equivalent Ho(1), and two equivalent Si(3) atoms. In the third Si site, Si(3) is bonded in a 9-coordinate geometry to two equivalent Ho(1), four equivalent Ho(2), one Si(1), and two equivalent Si(2) atoms. is represented by the CIF card [CIF]
data_Ho2Si3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.973
_cell_length_b   3.882
_cell_length_c   7.370
_cell_angle_alpha   74.733
_cell_angle_beta   74.365
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   105.283
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.873  0.623  0.755  1.0
  Ho  Ho1  1  0.118  0.368  0.264  1.0
  Si  Si2  1  0.714  0.964  0.072  1.0
  Si  Si3  1  0.442  0.192  0.615  1.0
  Si  Si4  1  0.543  0.793  0.413  1.0
[/CIF]
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