The material structure described by W10GeSi5 crystallizes in the tetragonal I422 space group. There are two inequivalent W sites. In the first W site, W(1) is bonded in a 6-coordinate geometry to one Ge(1), one Si(2), and four equivalent Si(1) atoms. In the second W site, W(2) is bonded in a 6-coordinate geometry to two equivalent W(2) and four equivalent Si(1) atoms. Ge(1) is bonded in a distorted q6 geometry to eight equivalent W(1) and two equivalent Si(2) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a 10-coordinate geometry to two equivalent W(2) and eight equivalent W(1) atoms. In the second Si site, Si(2) is bonded in a distorted q6 geometry to eight equivalent W(1) and two equivalent Ge(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si5GeW10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.013
_cell_length_b   7.311
_cell_length_c   7.311
_cell_angle_alpha   96.751
_cell_angle_beta   110.051
_cell_angle_gamma   69.949
_symmetry_Int_Tables_number   1
_cell_volume   236.473
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.331  0.500  0.163  1.0
  Si  Si1  1  0.669  0.500  0.837  1.0
  Si  Si2  1  0.831  0.837  0.500  1.0
  Si  Si3  1  0.169  0.163  0.500  1.0
  Si  Si4  1  0.250  0.000  0.000  1.0
  Ge  Ge5  1  0.750  0.000  0.000  1.0
  W  W6  1  0.422  0.848  0.697  1.0
  W  W7  1  0.572  0.152  0.303  1.0
  W  W8  1  0.928  0.303  0.152  1.0
  W  W9  1  0.078  0.697  0.848  1.0
  W  W10  1  0.725  0.697  0.152  1.0
  W  W11  1  0.270  0.303  0.848  1.0
  W  W12  1  0.775  0.152  0.697  1.0
  W  W13  1  0.230  0.848  0.303  1.0
  W  W14  1  0.250  0.500  0.500  1.0
  W  W15  1  0.750  0.500  0.500  1.0
[/CIF]
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The material structure described by W10GeSi5 crystallizes in the tetragonal I422 space group. There are two inequivalent W sites. In the first W site, W(1) is bonded in a 6-coordinate geometry to one Ge(1), one Si(2), and four equivalent Si(1) atoms. In the second W site, W(2) is bonded in a 6-coordinate geometry to two equivalent W(2) and four equivalent Si(1) atoms. Ge(1) is bonded in a distorted q6 geometry to eight equivalent W(1) and two equivalent Si(2) atoms. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded in a 10-coordinate geometry to two equivalent W(2) and eight equivalent W(1) atoms. In the second Si site, Si(2) is bonded in a distorted q6 geometry to eight equivalent W(1) and two equivalent Ge(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Si5GeW10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.013
_cell_length_b   7.311
_cell_length_c   7.311
_cell_angle_alpha   96.751
_cell_angle_beta   110.051
_cell_angle_gamma   69.949
_symmetry_Int_Tables_number   1
_cell_volume   236.473
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.331  0.500  0.163  1.0
  Si  Si1  1  0.669  0.500  0.837  1.0
  Si  Si2  1  0.831  0.837  0.500  1.0
  Si  Si3  1  0.169  0.163  0.500  1.0
  Si  Si4  1  0.250  0.000  0.000  1.0
  Ge  Ge5  1  0.750  0.000  0.000  1.0
  W  W6  1  0.422  0.848  0.697  1.0
  W  W7  1  0.572  0.152  0.303  1.0
  W  W8  1  0.928  0.303  0.152  1.0
  W  W9  1  0.078  0.697  0.848  1.0
  W  W10  1  0.725  0.697  0.152  1.0
  W  W11  1  0.270  0.303  0.848  1.0
  W  W12  1  0.775  0.152  0.697  1.0
  W  W13  1  0.230  0.848  0.303  1.0
  W  W14  1  0.250  0.500  0.500  1.0
  W  W15  1  0.750  0.500  0.500  1.0
[/CIF]
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