The crystal structure described by Hf2SiTe2 crystallizes in the tetragonal P4/mmm space group. The structure is zero-dimensional and consists of one Hf2SiTe2 cluster. Hf(1) is bonded in a distorted linear geometry to one Si(1) and one Te(1) atom. Si(1) is bonded in a linear geometry to two equivalent Hf(1) atoms. Te(1) is bonded in a distorted single-bond geometry to one Hf(1) atom. is represented by the CIF card [CIF]
data_Hf2SiTe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.020
_cell_length_b   3.020
_cell_length_c   14.975
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   136.613
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Hf  Hf0  1  0.500  0.500  0.177  1.0
  Hf  Hf1  1  0.500  0.500  0.823  1.0
  Si  Si2  1  0.500  0.500  0.000  1.0
  Te  Te3  1  0.500  0.500  0.628  1.0
  Te  Te4  1  0.500  0.500  0.372  1.0
[/CIF]
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The crystal structure described by Hf2SiTe2 crystallizes in the tetragonal P4/mmm space group. The structure is zero-dimensional and consists of one Hf2SiTe2 cluster. Hf(1) is bonded in a distorted linear geometry to one Si(1) and one Te(1) atom. Si(1) is bonded in a linear geometry to two equivalent Hf(1) atoms. Te(1) is bonded in a distorted single-bond geometry to one Hf(1) atom. is represented by the CIF card [CIF]
data_Hf2SiTe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.020
_cell_length_b   3.020
_cell_length_c   14.975
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   136.613
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Hf  Hf0  1  0.500  0.500  0.177  1.0
  Hf  Hf1  1  0.500  0.500  0.823  1.0
  Si  Si2  1  0.500  0.500  0.000  1.0
  Te  Te3  1  0.500  0.500  0.628  1.0
  Te  Te4  1  0.500  0.500  0.372  1.0
[/CIF]
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