The material described by GaO is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. Ga(1) is bonded to four equivalent O(1) atoms to form corner-sharing GaO4 tetrahedra. O(1) is bonded to four equivalent Ga(1) atoms to form corner-sharing OGa4 tetrahedra. is represented by the CIF card [CIF]
data_GaO
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.343
_cell_length_b   3.343
_cell_length_c   5.866
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   56.782
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.667  0.333  0.504  1.0
  Ga  Ga1  1  0.333  0.667  0.004  1.0
  O  O2  1  0.667  0.333  0.871  1.0
  O  O3  1  0.333  0.667  0.371  1.0
[/CIF]
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The material described by GaO is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. Ga(1) is bonded to four equivalent O(1) atoms to form corner-sharing GaO4 tetrahedra. O(1) is bonded to four equivalent Ga(1) atoms to form corner-sharing OGa4 tetrahedra. is represented by the CIF card [CIF]
data_GaO
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.343
_cell_length_b   3.343
_cell_length_c   5.866
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   56.782
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.667  0.333  0.504  1.0
  Ga  Ga1  1  0.333  0.667  0.004  1.0
  O  O2  1  0.667  0.333  0.871  1.0
  O  O3  1  0.333  0.667  0.371  1.0
[/CIF]
.