The material described by Ho2SiSO4 crystallizes in the orthorhombic Pbcm space group. There are two inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 8-coordinate geometry to two equivalent S(1), two equivalent O(2), and four equivalent O(1) atoms. In the second Ho site, Ho(2) is bonded in a 8-coordinate geometry to two equivalent S(1), two equivalent O(1), and four equivalent O(2) atoms. Si(1) is bonded in a tetrahedral geometry to two equivalent O(1) and two equivalent O(2) atoms. S(1) is bonded in a see-saw-like geometry to two equivalent Ho(1) and two equivalent Ho(2) atoms. There are two inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to one Ho(2), two equivalent Ho(1), and one Si(1) atom. In the second O site, O(2) is bonded in a 4-coordinate geometry to one Ho(1), two equivalent Ho(2), and one Si(1) atom. is represented by the CIF file [CIF]
data_Ho2SiSO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.114
_cell_length_b   6.922
_cell_length_c   10.695
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   452.620
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.384  0.750  0.500  1.0
  Ho  Ho1  1  0.384  0.750  0.000  1.0
  Ho  Ho2  1  0.616  0.250  0.500  1.0
  Ho  Ho3  1  0.616  0.250  0.000  1.0
  Ho  Ho4  1  0.844  0.528  0.750  1.0
  Ho  Ho5  1  0.844  0.972  0.250  1.0
  Ho  Ho6  1  0.156  0.028  0.750  1.0
  Ho  Ho7  1  0.156  0.472  0.250  1.0
  Si  Si8  1  0.122  0.250  0.000  1.0
  Si  Si9  1  0.878  0.750  0.000  1.0
  Si  Si10  1  0.878  0.750  0.500  1.0
  Si  Si11  1  0.122  0.250  0.500  1.0
  S  S12  1  0.523  0.813  0.750  1.0
  S  S13  1  0.523  0.687  0.250  1.0
  S  S14  1  0.477  0.313  0.750  1.0
  S  S15  1  0.477  0.187  0.250  1.0
  O  O16  1  0.285  0.433  0.029  1.0
  O  O17  1  0.285  0.067  0.971  1.0
  O  O18  1  0.715  0.933  0.471  1.0
  O  O19  1  0.715  0.567  0.529  1.0
  O  O20  1  0.715  0.567  0.971  1.0
  O  O21  1  0.715  0.933  0.029  1.0
  O  O22  1  0.285  0.067  0.529  1.0
  O  O23  1  0.285  0.433  0.471  1.0
  O  O24  1  0.039  0.738  0.123  1.0
  O  O25  1  0.039  0.738  0.377  1.0
  O  O26  1  0.961  0.238  0.377  1.0
  O  O27  1  0.961  0.262  0.623  1.0
  O  O28  1  0.961  0.262  0.877  1.0
  O  O29  1  0.961  0.238  0.123  1.0
  O  O30  1  0.039  0.762  0.623  1.0
  O  O31  1  0.039  0.762  0.877  1.0
[/CIF]
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The material described by Ho2SiSO4 crystallizes in the orthorhombic Pbcm space group. There are two inequivalent Ho sites. In the first Ho site, Ho(1) is bonded in a 8-coordinate geometry to two equivalent S(1), two equivalent O(2), and four equivalent O(1) atoms. In the second Ho site, Ho(2) is bonded in a 8-coordinate geometry to two equivalent S(1), two equivalent O(1), and four equivalent O(2) atoms. Si(1) is bonded in a tetrahedral geometry to two equivalent O(1) and two equivalent O(2) atoms. S(1) is bonded in a see-saw-like geometry to two equivalent Ho(1) and two equivalent Ho(2) atoms. There are two inequivalent O sites. In the first O site, O(1) is bonded in a 4-coordinate geometry to one Ho(2), two equivalent Ho(1), and one Si(1) atom. In the second O site, O(2) is bonded in a 4-coordinate geometry to one Ho(1), two equivalent Ho(2), and one Si(1) atom. is represented by the CIF file [CIF]
data_Ho2SiSO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.114
_cell_length_b   6.922
_cell_length_c   10.695
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   452.620
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.384  0.750  0.500  1.0
  Ho  Ho1  1  0.384  0.750  0.000  1.0
  Ho  Ho2  1  0.616  0.250  0.500  1.0
  Ho  Ho3  1  0.616  0.250  0.000  1.0
  Ho  Ho4  1  0.844  0.528  0.750  1.0
  Ho  Ho5  1  0.844  0.972  0.250  1.0
  Ho  Ho6  1  0.156  0.028  0.750  1.0
  Ho  Ho7  1  0.156  0.472  0.250  1.0
  Si  Si8  1  0.122  0.250  0.000  1.0
  Si  Si9  1  0.878  0.750  0.000  1.0
  Si  Si10  1  0.878  0.750  0.500  1.0
  Si  Si11  1  0.122  0.250  0.500  1.0
  S  S12  1  0.523  0.813  0.750  1.0
  S  S13  1  0.523  0.687  0.250  1.0
  S  S14  1  0.477  0.313  0.750  1.0
  S  S15  1  0.477  0.187  0.250  1.0
  O  O16  1  0.285  0.433  0.029  1.0
  O  O17  1  0.285  0.067  0.971  1.0
  O  O18  1  0.715  0.933  0.471  1.0
  O  O19  1  0.715  0.567  0.529  1.0
  O  O20  1  0.715  0.567  0.971  1.0
  O  O21  1  0.715  0.933  0.029  1.0
  O  O22  1  0.285  0.067  0.529  1.0
  O  O23  1  0.285  0.433  0.471  1.0
  O  O24  1  0.039  0.738  0.123  1.0
  O  O25  1  0.039  0.738  0.377  1.0
  O  O26  1  0.961  0.238  0.377  1.0
  O  O27  1  0.961  0.262  0.623  1.0
  O  O28  1  0.961  0.262  0.877  1.0
  O  O29  1  0.961  0.238  0.123  1.0
  O  O30  1  0.039  0.762  0.623  1.0
  O  O31  1  0.039  0.762  0.877  1.0
[/CIF]
.