The material structure described by V(SiO3)2 crystallizes in the triclinic P-1 space group. V(1) is bonded to one O(3), one O(4), two equivalent O(5), and two equivalent O(6) atoms to form VO6 octahedra that share corners with three equivalent Si(1)O4 tetrahedra, corners with three equivalent Si(2)O4 tetrahedra, and edges with two equivalent V(1)O6 octahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(6) atom to form SiO4 tetrahedra that share corners with three equivalent V(1)O6 octahedra and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 29-59°. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(4), and one O(5) atom to form SiO4 tetrahedra that share corners with three equivalent V(1)O6 octahedra and corners with two equivalent Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 29-60°. There are six inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one V(1) and one Si(1) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one V(1) and one Si(2) atom. In the fifth O site, O(5) is bonded in a distorted trigonal planar geometry to two equivalent V(1) and one Si(2) atom. In the sixth O site, O(6) is bonded in a distorted trigonal planar geometry to two equivalent V(1) and one Si(1) atom. is represented by the CIF card [CIF]
data_V(SiO3)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.367
_cell_length_b   6.499
_cell_length_c   6.523
_cell_angle_alpha   84.981
_cell_angle_beta   75.523
_cell_angle_gamma   75.619
_symmetry_Int_Tables_number   1
_cell_volume   213.345
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  O  O0  1  0.536  0.635  0.147  1.0
  O  O1  1  0.456  0.365  0.851  1.0
  O  O2  1  0.035  0.647  0.136  1.0
  O  O3  1  0.957  0.352  0.863  1.0
  O  O4  1  0.218  0.105  0.120  1.0
  O  O5  1  0.775  0.894  0.878  1.0
  O  O6  1  0.274  0.379  0.394  1.0
  O  O7  1  0.719  0.621  0.605  1.0
  O  O8  1  0.133  0.816  0.453  1.0
  O  O9  1  0.860  0.184  0.545  1.0
  O  O10  1  0.362  0.046  0.684  1.0
  O  O11  1  0.631  0.954  0.314  1.0
  Si  Si12  1  0.247  0.215  0.884  1.0
  Si  Si13  1  0.745  0.785  0.114  1.0
  Si  Si14  1  0.245  0.617  0.284  1.0
  Si  Si15  1  0.747  0.383  0.715  1.0
  V  V16  1  0.248  0.102  0.398  1.0
  V  V17  1  0.745  0.898  0.601  1.0
[/CIF]
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The material structure described by V(SiO3)2 crystallizes in the triclinic P-1 space group. V(1) is bonded to one O(3), one O(4), two equivalent O(5), and two equivalent O(6) atoms to form VO6 octahedra that share corners with three equivalent Si(1)O4 tetrahedra, corners with three equivalent Si(2)O4 tetrahedra, and edges with two equivalent V(1)O6 octahedra. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(6) atom to form SiO4 tetrahedra that share corners with three equivalent V(1)O6 octahedra and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 29-59°. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(4), and one O(5) atom to form SiO4 tetrahedra that share corners with three equivalent V(1)O6 octahedra and corners with two equivalent Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 29-60°. There are six inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a bent 150 degrees geometry to one V(1) and one Si(1) atom. In the fourth O site, O(4) is bonded in a bent 150 degrees geometry to one V(1) and one Si(2) atom. In the fifth O site, O(5) is bonded in a distorted trigonal planar geometry to two equivalent V(1) and one Si(2) atom. In the sixth O site, O(6) is bonded in a distorted trigonal planar geometry to two equivalent V(1) and one Si(1) atom. is represented by the CIF card [CIF]
data_V(SiO3)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.367
_cell_length_b   6.499
_cell_length_c   6.523
_cell_angle_alpha   84.981
_cell_angle_beta   75.523
_cell_angle_gamma   75.619
_symmetry_Int_Tables_number   1
_cell_volume   213.345
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  O  O0  1  0.536  0.635  0.147  1.0
  O  O1  1  0.456  0.365  0.851  1.0
  O  O2  1  0.035  0.647  0.136  1.0
  O  O3  1  0.957  0.352  0.863  1.0
  O  O4  1  0.218  0.105  0.120  1.0
  O  O5  1  0.775  0.894  0.878  1.0
  O  O6  1  0.274  0.379  0.394  1.0
  O  O7  1  0.719  0.621  0.605  1.0
  O  O8  1  0.133  0.816  0.453  1.0
  O  O9  1  0.860  0.184  0.545  1.0
  O  O10  1  0.362  0.046  0.684  1.0
  O  O11  1  0.631  0.954  0.314  1.0
  Si  Si12  1  0.247  0.215  0.884  1.0
  Si  Si13  1  0.745  0.785  0.114  1.0
  Si  Si14  1  0.245  0.617  0.284  1.0
  Si  Si15  1  0.747  0.383  0.715  1.0
  V  V16  1  0.248  0.102  0.398  1.0
  V  V17  1  0.745  0.898  0.601  1.0
[/CIF]
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