The material structure described by Ga2BiAs is Enargite-like structured and crystallizes in the tetragonal P-4m2 space group. Ga(1) is bonded to two equivalent Bi(1) and two equivalent As(1) atoms to form corner-sharing GaBi2As2 tetrahedra. Bi(1) is bonded to four equivalent Ga(1) atoms to form BiGa4 tetrahedra that share corners with four equivalent Bi(1)Ga4 tetrahedra and corners with eight equivalent As(1)Ga4 tetrahedra. As(1) is bonded to four equivalent Ga(1) atoms to form AsGa4 tetrahedra that share corners with four equivalent As(1)Ga4 tetrahedra and corners with eight equivalent Bi(1)Ga4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga2BiAs
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.300
_cell_length_b   4.300
_cell_length_c   6.146
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   113.644
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.000  0.726  1.0
  Ga  Ga1  1  0.000  0.500  0.274  1.0
  Bi  Bi2  1  0.000  0.000  0.000  1.0
  As  As3  1  0.500  0.500  0.500  1.0
[/CIF]
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The material structure described by Ga2BiAs is Enargite-like structured and crystallizes in the tetragonal P-4m2 space group. Ga(1) is bonded to two equivalent Bi(1) and two equivalent As(1) atoms to form corner-sharing GaBi2As2 tetrahedra. Bi(1) is bonded to four equivalent Ga(1) atoms to form BiGa4 tetrahedra that share corners with four equivalent Bi(1)Ga4 tetrahedra and corners with eight equivalent As(1)Ga4 tetrahedra. As(1) is bonded to four equivalent Ga(1) atoms to form AsGa4 tetrahedra that share corners with four equivalent As(1)Ga4 tetrahedra and corners with eight equivalent Bi(1)Ga4 tetrahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga2BiAs
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.300
_cell_length_b   4.300
_cell_length_c   6.146
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   113.644
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.000  0.726  1.0
  Ga  Ga1  1  0.000  0.500  0.274  1.0
  Bi  Bi2  1  0.000  0.000  0.000  1.0
  As  As3  1  0.500  0.500  0.500  1.0
[/CIF]
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