The material structure described by V(SiO3)2 crystallizes in the triclinic P-1 space group. There are two inequivalent V sites. In the first V site, V(1) is bonded to two equivalent O(4), two equivalent O(7), and two equivalent O(8) atoms to form VO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, and edges with two equivalent V(2)O6 octahedra. In the second V site, V(2) is bonded to one O(1), one O(2), one O(4), one O(6), one O(8), and one O(9) atom to form distorted VO6 octahedra that share  a cornercorner with one Si(3)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra,  an edgeedge with one V(1)O6 octahedra, and  an edgeedge with one Si(3)O4 tetrahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(2), one O(3), one O(4), and one O(5) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 26-52°. In the second Si site, Si(2) is bonded to one O(1), one O(3), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 33-38°. In the third Si site, Si(3) is bonded to one O(5), one O(6), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  an edgeedge with one V(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 48-64°. There are nine inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one V(2) and one Si(2) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one V(2) and one Si(1) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one V(1), one V(2), and one Si(1) atom. In the fifth O site, O(5) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 120 degrees geometry to one V(2), one Si(2), and one Si(3) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one V(1) and one Si(2) atom. In the eighth O site, O(8) is bonded in a distorted trigonal non-coplanar geometry to one V(1), one V(2), and one Si(3) atom. In the ninth O site, O(9) is bonded in a water-like geometry to one V(2) and one Si(3) atom. is represented by the CIF card [CIF]
data_V(SiO3)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.060
_cell_length_b   7.299
_cell_length_c   7.685
_cell_angle_alpha   78.399
_cell_angle_beta   66.143
_cell_angle_gamma   76.641
_symmetry_Int_Tables_number   1
_cell_volume   349.746
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  O  O0  1  0.237  0.953  0.671  1.0
  O  O1  1  0.763  0.047  0.329  1.0
  O  O2  1  0.822  0.947  0.754  1.0
  O  O3  1  0.178  0.053  0.246  1.0
  O  O4  1  0.534  0.844  0.263  1.0
  O  O5  1  0.466  0.156  0.737  1.0
  O  O6  1  0.163  0.716  0.473  1.0
  O  O7  1  0.837  0.284  0.527  1.0
  O  O8  1  0.333  0.723  0.096  1.0
  O  O9  1  0.667  0.277  0.904  1.0
  O  O10  1  0.948  0.785  0.080  1.0
  O  O11  1  0.052  0.215  0.920  1.0
  O  O12  1  0.793  0.678  0.450  1.0
  O  O13  1  0.207  0.322  0.550  1.0
  O  O14  1  0.886  0.556  0.775  1.0
  O  O15  1  0.114  0.444  0.225  1.0
  O  O16  1  0.768  0.410  0.160  1.0
  O  O17  1  0.232  0.591  0.840  1.0
  Si  Si18  1  0.305  0.838  0.270  1.0
  Si  Si19  1  0.695  0.162  0.730  1.0
  Si  Si20  1  0.752  0.845  0.284  1.0
  Si  Si21  1  0.248  0.155  0.716  1.0
  Si  Si22  1  0.167  0.627  0.061  1.0
  Si  Si23  1  0.833  0.374  0.939  1.0
  V  V24  1  0.000  0.500  0.500  1.0
  V  V25  1  0.058  0.773  0.736  1.0
  V  V26  1  0.942  0.227  0.264  1.0
[/CIF]
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The material structure described by V(SiO3)2 crystallizes in the triclinic P-1 space group. There are two inequivalent V sites. In the first V site, V(1) is bonded to two equivalent O(4), two equivalent O(7), and two equivalent O(8) atoms to form VO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, corners with two equivalent Si(3)O4 tetrahedra, and edges with two equivalent V(2)O6 octahedra. In the second V site, V(2) is bonded to one O(1), one O(2), one O(4), one O(6), one O(8), and one O(9) atom to form distorted VO6 octahedra that share  a cornercorner with one Si(3)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra,  an edgeedge with one V(1)O6 octahedra, and  an edgeedge with one Si(3)O4 tetrahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(2), one O(3), one O(4), and one O(5) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 26-52°. In the second Si site, Si(2) is bonded to one O(1), one O(3), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra, corners with two equivalent V(2)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles range from 33-38°. In the third Si site, Si(3) is bonded to one O(5), one O(6), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one V(2)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  an edgeedge with one V(2)O6 octahedra. The corner-sharing octahedral tilt angles range from 48-64°. There are nine inequivalent O sites. In the first O site, O(1) is bonded in a bent 150 degrees geometry to one V(2) and one Si(2) atom. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one V(2) and one Si(1) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted trigonal planar geometry to one V(1), one V(2), and one Si(1) atom. In the fifth O site, O(5) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(3) atom. In the sixth O site, O(6) is bonded in a distorted bent 120 degrees geometry to one V(2), one Si(2), and one Si(3) atom. In the seventh O site, O(7) is bonded in a bent 150 degrees geometry to one V(1) and one Si(2) atom. In the eighth O site, O(8) is bonded in a distorted trigonal non-coplanar geometry to one V(1), one V(2), and one Si(3) atom. In the ninth O site, O(9) is bonded in a water-like geometry to one V(2) and one Si(3) atom. is represented by the CIF card [CIF]
data_V(SiO3)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.060
_cell_length_b   7.299
_cell_length_c   7.685
_cell_angle_alpha   78.399
_cell_angle_beta   66.143
_cell_angle_gamma   76.641
_symmetry_Int_Tables_number   1
_cell_volume   349.746
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  O  O0  1  0.237  0.953  0.671  1.0
  O  O1  1  0.763  0.047  0.329  1.0
  O  O2  1  0.822  0.947  0.754  1.0
  O  O3  1  0.178  0.053  0.246  1.0
  O  O4  1  0.534  0.844  0.263  1.0
  O  O5  1  0.466  0.156  0.737  1.0
  O  O6  1  0.163  0.716  0.473  1.0
  O  O7  1  0.837  0.284  0.527  1.0
  O  O8  1  0.333  0.723  0.096  1.0
  O  O9  1  0.667  0.277  0.904  1.0
  O  O10  1  0.948  0.785  0.080  1.0
  O  O11  1  0.052  0.215  0.920  1.0
  O  O12  1  0.793  0.678  0.450  1.0
  O  O13  1  0.207  0.322  0.550  1.0
  O  O14  1  0.886  0.556  0.775  1.0
  O  O15  1  0.114  0.444  0.225  1.0
  O  O16  1  0.768  0.410  0.160  1.0
  O  O17  1  0.232  0.591  0.840  1.0
  Si  Si18  1  0.305  0.838  0.270  1.0
  Si  Si19  1  0.695  0.162  0.730  1.0
  Si  Si20  1  0.752  0.845  0.284  1.0
  Si  Si21  1  0.248  0.155  0.716  1.0
  Si  Si22  1  0.167  0.627  0.061  1.0
  Si  Si23  1  0.833  0.374  0.939  1.0
  V  V24  1  0.000  0.500  0.500  1.0
  V  V25  1  0.058  0.773  0.736  1.0
  V  V26  1  0.942  0.227  0.264  1.0
[/CIF]
.