The material structure described by Cs4SiO4 crystallizes in the monoclinic P2_1/c space group. There are four inequivalent Cs sites. In the first Cs site, Cs(1) is bonded in a 6-coordinate geometry to one O(2), one O(4), two equivalent O(1), and two equivalent O(3) atoms. In the second Cs site, Cs(2) is bonded in a 5-coordinate geometry to one O(1), two equivalent O(2), and two equivalent O(4) atoms. In the third Cs site, Cs(3) is bonded to one O(1), one O(4), and two equivalent O(3) atoms to form distorted CsO4 tetrahedra that share corners with two equivalent Cs(3)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and  an edgeedge with one Si(1)O4 tetrahedra. In the fourth Cs site, Cs(4) is bonded in a 6-coordinate geometry to one O(1), one O(3), two equivalent O(2), and two equivalent O(4) atoms. Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share corners with two equivalent Cs(3)O4 tetrahedra and  an edgeedge with one Cs(3)O4 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to one Cs(2), one Cs(3), one Cs(4), two equivalent Cs(1), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted single-bond geometry to one Cs(1), two equivalent Cs(2), two equivalent Cs(4), and one Si(1) atom. In the third O site, O(3) is bonded in a distorted single-bond geometry to one Cs(4), two equivalent Cs(1), two equivalent Cs(3), and one Si(1) atom. In the fourth O site, O(4) is bonded in a distorted single-bond geometry to one Cs(1), one Cs(3), two equivalent Cs(2), two equivalent Cs(4), and one Si(1) atom. is represented by the CIF card [CIF]
data_Cs4SiO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   18.843
_cell_length_b   7.015
_cell_length_c   7.006
_cell_angle_alpha   67.337
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   854.609
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.810  0.855  0.702  1.0
  Cs  Cs1  1  0.010  0.793  0.789  1.0
  Cs  Cs2  1  0.205  0.652  0.826  1.0
  Cs  Cs3  1  0.428  0.664  0.817  1.0
  Cs  Cs4  1  0.690  0.855  0.202  1.0
  Cs  Cs5  1  0.490  0.793  0.289  1.0
  Cs  Cs6  1  0.295  0.652  0.326  1.0
  Cs  Cs7  1  0.072  0.664  0.317  1.0
  Cs  Cs8  1  0.928  0.336  0.683  1.0
  Cs  Cs9  1  0.705  0.348  0.674  1.0
  Cs  Cs10  1  0.510  0.207  0.711  1.0
  Cs  Cs11  1  0.310  0.145  0.798  1.0
  Cs  Cs12  1  0.572  0.336  0.183  1.0
  Cs  Cs13  1  0.795  0.348  0.174  1.0
  Cs  Cs14  1  0.990  0.207  0.211  1.0
  Cs  Cs15  1  0.190  0.145  0.298  1.0
  Si  Si16  1  0.622  0.754  0.764  1.0
  Si  Si17  1  0.878  0.754  0.264  1.0
  Si  Si18  1  0.122  0.246  0.736  1.0
  Si  Si19  1  0.378  0.246  0.236  1.0
  O  O20  1  0.651  0.977  0.592  1.0
  O  O21  1  0.566  0.792  0.928  1.0
  O  O22  1  0.849  0.977  0.092  1.0
  O  O23  1  0.934  0.792  0.428  1.0
  O  O24  1  0.689  0.614  0.904  1.0
  O  O25  1  0.583  0.612  0.653  1.0
  O  O26  1  0.083  0.388  0.847  1.0
  O  O27  1  0.811  0.614  0.404  1.0
  O  O28  1  0.189  0.386  0.596  1.0
  O  O29  1  0.917  0.612  0.153  1.0
  O  O30  1  0.417  0.388  0.347  1.0
  O  O31  1  0.311  0.386  0.096  1.0
  O  O32  1  0.066  0.208  0.572  1.0
  O  O33  1  0.151  0.023  0.908  1.0
  O  O34  1  0.434  0.208  0.072  1.0
  O  O35  1  0.349  0.023  0.408  1.0
[/CIF]
.
The material structure described by Cs4SiO4 crystallizes in the monoclinic P2_1/c space group. There are four inequivalent Cs sites. In the first Cs site, Cs(1) is bonded in a 6-coordinate geometry to one O(2), one O(4), two equivalent O(1), and two equivalent O(3) atoms. In the second Cs site, Cs(2) is bonded in a 5-coordinate geometry to one O(1), two equivalent O(2), and two equivalent O(4) atoms. In the third Cs site, Cs(3) is bonded to one O(1), one O(4), and two equivalent O(3) atoms to form distorted CsO4 tetrahedra that share corners with two equivalent Cs(3)O4 tetrahedra, corners with two equivalent Si(1)O4 tetrahedra, and  an edgeedge with one Si(1)O4 tetrahedra. In the fourth Cs site, Cs(4) is bonded in a 6-coordinate geometry to one O(1), one O(3), two equivalent O(2), and two equivalent O(4) atoms. Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form SiO4 tetrahedra that share corners with two equivalent Cs(3)O4 tetrahedra and  an edgeedge with one Cs(3)O4 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to one Cs(2), one Cs(3), one Cs(4), two equivalent Cs(1), and one Si(1) atom. In the second O site, O(2) is bonded in a distorted single-bond geometry to one Cs(1), two equivalent Cs(2), two equivalent Cs(4), and one Si(1) atom. In the third O site, O(3) is bonded in a distorted single-bond geometry to one Cs(4), two equivalent Cs(1), two equivalent Cs(3), and one Si(1) atom. In the fourth O site, O(4) is bonded in a distorted single-bond geometry to one Cs(1), one Cs(3), two equivalent Cs(2), two equivalent Cs(4), and one Si(1) atom. is represented by the CIF card [CIF]
data_Cs4SiO4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   18.843
_cell_length_b   7.015
_cell_length_c   7.006
_cell_angle_alpha   67.337
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   854.609
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Cs  Cs0  1  0.810  0.855  0.702  1.0
  Cs  Cs1  1  0.010  0.793  0.789  1.0
  Cs  Cs2  1  0.205  0.652  0.826  1.0
  Cs  Cs3  1  0.428  0.664  0.817  1.0
  Cs  Cs4  1  0.690  0.855  0.202  1.0
  Cs  Cs5  1  0.490  0.793  0.289  1.0
  Cs  Cs6  1  0.295  0.652  0.326  1.0
  Cs  Cs7  1  0.072  0.664  0.317  1.0
  Cs  Cs8  1  0.928  0.336  0.683  1.0
  Cs  Cs9  1  0.705  0.348  0.674  1.0
  Cs  Cs10  1  0.510  0.207  0.711  1.0
  Cs  Cs11  1  0.310  0.145  0.798  1.0
  Cs  Cs12  1  0.572  0.336  0.183  1.0
  Cs  Cs13  1  0.795  0.348  0.174  1.0
  Cs  Cs14  1  0.990  0.207  0.211  1.0
  Cs  Cs15  1  0.190  0.145  0.298  1.0
  Si  Si16  1  0.622  0.754  0.764  1.0
  Si  Si17  1  0.878  0.754  0.264  1.0
  Si  Si18  1  0.122  0.246  0.736  1.0
  Si  Si19  1  0.378  0.246  0.236  1.0
  O  O20  1  0.651  0.977  0.592  1.0
  O  O21  1  0.566  0.792  0.928  1.0
  O  O22  1  0.849  0.977  0.092  1.0
  O  O23  1  0.934  0.792  0.428  1.0
  O  O24  1  0.689  0.614  0.904  1.0
  O  O25  1  0.583  0.612  0.653  1.0
  O  O26  1  0.083  0.388  0.847  1.0
  O  O27  1  0.811  0.614  0.404  1.0
  O  O28  1  0.189  0.386  0.596  1.0
  O  O29  1  0.917  0.612  0.153  1.0
  O  O30  1  0.417  0.388  0.347  1.0
  O  O31  1  0.311  0.386  0.096  1.0
  O  O32  1  0.066  0.208  0.572  1.0
  O  O33  1  0.151  0.023  0.908  1.0
  O  O34  1  0.434  0.208  0.072  1.0
  O  O35  1  0.349  0.023  0.408  1.0
[/CIF]
.