The material structure described by VSi2 is Titanium Disilicide-like structured and crystallizes in the hexagonal P6_222 space group. V(1) is bonded in a distorted q6 geometry to ten equivalent Si(1) atoms. Si(1) is bonded in a 10-coordinate geometry to five equivalent V(1) and five equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_VSi2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.535
_cell_length_b   4.535
_cell_length_c   6.319
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   112.535
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.000  0.500  0.167  1.0
  V  V1  1  0.500  0.500  0.833  1.0
  V  V2  1  0.500  0.000  0.500  1.0
  Si  Si3  1  0.837  0.675  0.500  1.0
  Si  Si4  1  0.162  0.838  0.833  1.0
  Si  Si5  1  0.675  0.838  0.167  1.0
  Si  Si6  1  0.163  0.325  0.500  1.0
  Si  Si7  1  0.838  0.162  0.833  1.0
  Si  Si8  1  0.325  0.162  0.167  1.0
[/CIF]
.
The material structure described by VSi2 is Titanium Disilicide-like structured and crystallizes in the hexagonal P6_222 space group. V(1) is bonded in a distorted q6 geometry to ten equivalent Si(1) atoms. Si(1) is bonded in a 10-coordinate geometry to five equivalent V(1) and five equivalent Si(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_VSi2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.535
_cell_length_b   4.535
_cell_length_c   6.319
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   112.535
_cell_formula_units_Z   3
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  V  V0  1  0.000  0.500  0.167  1.0
  V  V1  1  0.500  0.500  0.833  1.0
  V  V2  1  0.500  0.000  0.500  1.0
  Si  Si3  1  0.837  0.675  0.500  1.0
  Si  Si4  1  0.162  0.838  0.833  1.0
  Si  Si5  1  0.675  0.838  0.167  1.0
  Si  Si6  1  0.163  0.325  0.500  1.0
  Si  Si7  1  0.838  0.162  0.833  1.0
  Si  Si8  1  0.325  0.162  0.167  1.0
[/CIF]
.