The material described by SiC is Moissanite-4H structured and crystallizes in the hexagonal P6_3mc space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(1) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2) is bonded to one C(2) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. There are two inequivalent C sites. In the first C site, C(1) is bonded to one Si(1) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(2) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. is represented by the CIF card [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.076
_cell_length_b   3.076
_cell_length_c   10.071
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   82.504
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.667  0.333  0.938  1.0
  Si  Si1  1  0.333  0.667  0.438  1.0
  Si  Si2  1  0.000  0.000  0.688  1.0
  Si  Si3  1  0.000  0.000  0.188  1.0
  C  C4  1  0.667  0.333  0.750  1.0
  C  C5  1  0.333  0.667  0.250  1.0
  C  C6  1  0.000  0.000  0.500  1.0
  C  C7  1  0.000  0.000  0.000  1.0
[/CIF]
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The material described by SiC is Moissanite-4H structured and crystallizes in the hexagonal P6_3mc space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one C(1) and three equivalent C(2) atoms to form corner-sharing SiC4 tetrahedra. In the second Si site, Si(2) is bonded to one C(2) and three equivalent C(1) atoms to form corner-sharing SiC4 tetrahedra. There are two inequivalent C sites. In the first C site, C(1) is bonded to one Si(1) and three equivalent Si(2) atoms to form corner-sharing CSi4 tetrahedra. In the second C site, C(2) is bonded to one Si(2) and three equivalent Si(1) atoms to form corner-sharing CSi4 tetrahedra. is represented by the CIF card [CIF]
data_SiC
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.076
_cell_length_b   3.076
_cell_length_c   10.071
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   82.504
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.667  0.333  0.938  1.0
  Si  Si1  1  0.333  0.667  0.438  1.0
  Si  Si2  1  0.000  0.000  0.688  1.0
  Si  Si3  1  0.000  0.000  0.188  1.0
  C  C4  1  0.667  0.333  0.750  1.0
  C  C5  1  0.333  0.667  0.250  1.0
  C  C6  1  0.000  0.000  0.500  1.0
  C  C7  1  0.000  0.000  0.000  1.0
[/CIF]
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