The crystal structure described by GaI3 is Indium-like structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of two GaI3 clusters. Ga(1) is bonded to one I(1), one I(2), and two equivalent I(3) atoms to form edge-sharing GaI4 tetrahedra. There are three inequivalent I sites. In the first I site, I(2) is bonded in a single-bond geometry to one Ga(1) atom. In the second I site, I(1) is bonded in a single-bond geometry to one Ga(1) atom. In the third I site, I(3) is bonded in an L-shaped geometry to two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_GaI3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.304
_cell_length_b   9.796
_cell_length_c   12.157
_cell_angle_alpha   108.110
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   713.510
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.004  0.805  0.952  1.0
  Ga  Ga1  1  0.504  0.195  0.548  1.0
  Ga  Ga2  1  0.996  0.195  0.048  1.0
  Ga  Ga3  1  0.496  0.805  0.452  1.0
  I  I4  1  0.766  0.669  0.792  1.0
  I  I5  1  0.266  0.331  0.708  1.0
  I  I6  1  0.234  0.331  0.208  1.0
  I  I7  1  0.734  0.669  0.292  1.0
  I  I8  1  0.248  0.677  0.048  1.0
  I  I9  1  0.748  0.323  0.452  1.0
  I  I10  1  0.752  0.323  0.952  1.0
  I  I11  1  0.252  0.677  0.548  1.0
  I  I12  1  0.777  0.999  0.115  1.0
  I  I13  1  0.277  0.001  0.385  1.0
  I  I14  1  0.223  0.001  0.885  1.0
  I  I15  1  0.723  0.999  0.615  1.0
[/CIF]
.
The crystal structure described by GaI3 is Indium-like structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of two GaI3 clusters. Ga(1) is bonded to one I(1), one I(2), and two equivalent I(3) atoms to form edge-sharing GaI4 tetrahedra. There are three inequivalent I sites. In the first I site, I(2) is bonded in a single-bond geometry to one Ga(1) atom. In the second I site, I(1) is bonded in a single-bond geometry to one Ga(1) atom. In the third I site, I(3) is bonded in an L-shaped geometry to two equivalent Ga(1) atoms. is represented by the CIF card [CIF]
data_GaI3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.304
_cell_length_b   9.796
_cell_length_c   12.157
_cell_angle_alpha   108.110
_cell_angle_beta   90.000
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   713.510
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.004  0.805  0.952  1.0
  Ga  Ga1  1  0.504  0.195  0.548  1.0
  Ga  Ga2  1  0.996  0.195  0.048  1.0
  Ga  Ga3  1  0.496  0.805  0.452  1.0
  I  I4  1  0.766  0.669  0.792  1.0
  I  I5  1  0.266  0.331  0.708  1.0
  I  I6  1  0.234  0.331  0.208  1.0
  I  I7  1  0.734  0.669  0.292  1.0
  I  I8  1  0.248  0.677  0.048  1.0
  I  I9  1  0.748  0.323  0.452  1.0
  I  I10  1  0.752  0.323  0.952  1.0
  I  I11  1  0.252  0.677  0.548  1.0
  I  I12  1  0.777  0.999  0.115  1.0
  I  I13  1  0.277  0.001  0.385  1.0
  I  I14  1  0.223  0.001  0.885  1.0
  I  I15  1  0.723  0.999  0.615  1.0
[/CIF]
.