The material structure described by Ba2GeSi3O10 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 9-coordinate geometry to one O(1), one O(4), one O(5), one O(8), one O(9), two equivalent O(6), and two equivalent O(7) atoms. In the second Ba site, Ba(2) is bonded in a 9-coordinate geometry to one O(10), one O(2), one O(3), one O(6), one O(7), two equivalent O(5), and two equivalent O(8) atoms. Ge(1) is bonded to one O(1), one O(2), one O(5), and one O(9) atom to form GeO4 tetrahedra that share  a cornercorner with one Si(3)O4 tetrahedra and corners with two equivalent Si(1)O4 tetrahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(10), one O(2), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Si(2)O4 tetrahedra and corners with two equivalent Ge(1)O4 tetrahedra. In the second Si site, Si(2) is bonded to one O(10), one O(3), one O(4), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(3), one O(4), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ge(1)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a 3-coordinate geometry to one Ba(1), one Ge(1), and one Si(1) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to one Ba(2), one Ge(1), and one Si(1) atom. In the third O site, O(3) is bonded in a 2-coordinate geometry to one Ba(2), one Si(2), and one Si(3) atom. In the fourth O site, O(4) is bonded in a 2-coordinate geometry to one Ba(1), one Si(2), and one Si(3) atom. In the fifth O site, O(5) is bonded in a 1-coordinate geometry to one Ba(1), two equivalent Ba(2), and one Ge(1) atom. In the sixth O site, O(6) is bonded in a distorted single-bond geometry to one Ba(2), two equivalent Ba(1), and one Si(1) atom. In the seventh O site, O(7) is bonded in a distorted single-bond geometry to one Ba(2), two equivalent Ba(1), and one Si(2) atom. In the eighth O site, O(8) is bonded in a distorted single-bond geometry to one Ba(1), two equivalent Ba(2), and one Si(3) atom. In the ninth O site, O(9) is bonded in a distorted bent 150 degrees geometry to one Ba(1), one Ge(1), and one Si(3) atom. In the tenth O site, O(10) is bonded in a distorted bent 150 degrees geometry to one Ba(2), one Si(1), and one Si(2) atom. is represented by the CIF file [CIF]
data_Ba2Si3GeO10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.741
_cell_length_b   7.874
_cell_length_c   13.855
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.020
_symmetry_Int_Tables_number   1
_cell_volume   517.220
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.215  0.251  0.545  1.0
  Ba  Ba1  1  0.285  0.249  0.045  1.0
  Ba  Ba2  1  0.780  0.755  0.457  1.0
  Ba  Ba3  1  0.720  0.745  0.957  1.0
  Si  Si4  1  0.854  0.550  0.180  1.0
  Si  Si5  1  0.646  0.950  0.680  1.0
  Si  Si6  1  0.855  0.954  0.183  1.0
  Si  Si7  1  0.645  0.546  0.683  1.0
  Si  Si8  1  0.145  0.459  0.817  1.0
  Si  Si9  1  0.355  0.041  0.317  1.0
  Ge  Ge10  1  0.150  0.044  0.817  1.0
  Ge  Ge11  1  0.350  0.456  0.317  1.0
  O  O12  1  0.345  0.047  0.708  1.0
  O  O13  1  0.155  0.453  0.208  1.0
  O  O14  1  0.675  0.553  0.283  1.0
  O  O15  1  0.825  0.947  0.783  1.0
  O  O16  1  0.653  0.951  0.281  1.0
  O  O17  1  0.847  0.549  0.781  1.0
  O  O18  1  0.347  0.456  0.719  1.0
  O  O19  1  0.153  0.044  0.219  1.0
  O  O20  1  0.268  0.953  0.922  1.0
  O  O21  1  0.232  0.547  0.422  1.0
  O  O22  1  0.728  0.462  0.086  1.0
  O  O23  1  0.772  0.038  0.586  1.0
  O  O24  1  0.740  0.045  0.088  1.0
  O  O25  1  0.760  0.455  0.588  1.0
  O  O26  1  0.262  0.549  0.911  1.0
  O  O27  1  0.238  0.951  0.411  1.0
  O  O28  1  0.067  0.259  0.845  1.0
  O  O29  1  0.433  0.241  0.345  1.0
  O  O30  1  0.925  0.752  0.158  1.0
  O  O31  1  0.575  0.748  0.658  1.0
[/CIF]
.
The material structure described by Ba2GeSi3O10 crystallizes in the monoclinic P2_1 space group. There are two inequivalent Ba sites. In the first Ba site, Ba(1) is bonded in a 9-coordinate geometry to one O(1), one O(4), one O(5), one O(8), one O(9), two equivalent O(6), and two equivalent O(7) atoms. In the second Ba site, Ba(2) is bonded in a 9-coordinate geometry to one O(10), one O(2), one O(3), one O(6), one O(7), two equivalent O(5), and two equivalent O(8) atoms. Ge(1) is bonded to one O(1), one O(2), one O(5), and one O(9) atom to form GeO4 tetrahedra that share  a cornercorner with one Si(3)O4 tetrahedra and corners with two equivalent Si(1)O4 tetrahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(10), one O(2), and one O(6) atom to form SiO4 tetrahedra that share  a cornercorner with one Si(2)O4 tetrahedra and corners with two equivalent Ge(1)O4 tetrahedra. In the second Si site, Si(2) is bonded to one O(10), one O(3), one O(4), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(3), one O(4), one O(8), and one O(9) atom to form SiO4 tetrahedra that share  a cornercorner with one Ge(1)O4 tetrahedra and corners with two equivalent Si(2)O4 tetrahedra. There are ten inequivalent O sites. In the first O site, O(1) is bonded in a 3-coordinate geometry to one Ba(1), one Ge(1), and one Si(1) atom. In the second O site, O(2) is bonded in a 2-coordinate geometry to one Ba(2), one Ge(1), and one Si(1) atom. In the third O site, O(3) is bonded in a 2-coordinate geometry to one Ba(2), one Si(2), and one Si(3) atom. In the fourth O site, O(4) is bonded in a 2-coordinate geometry to one Ba(1), one Si(2), and one Si(3) atom. In the fifth O site, O(5) is bonded in a 1-coordinate geometry to one Ba(1), two equivalent Ba(2), and one Ge(1) atom. In the sixth O site, O(6) is bonded in a distorted single-bond geometry to one Ba(2), two equivalent Ba(1), and one Si(1) atom. In the seventh O site, O(7) is bonded in a distorted single-bond geometry to one Ba(2), two equivalent Ba(1), and one Si(2) atom. In the eighth O site, O(8) is bonded in a distorted single-bond geometry to one Ba(1), two equivalent Ba(2), and one Si(3) atom. In the ninth O site, O(9) is bonded in a distorted bent 150 degrees geometry to one Ba(1), one Ge(1), and one Si(3) atom. In the tenth O site, O(10) is bonded in a distorted bent 150 degrees geometry to one Ba(2), one Si(1), and one Si(2) atom. is represented by the CIF file [CIF]
data_Ba2Si3GeO10
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   4.741
_cell_length_b   7.874
_cell_length_c   13.855
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   90.020
_symmetry_Int_Tables_number   1
_cell_volume   517.220
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ba  Ba0  1  0.215  0.251  0.545  1.0
  Ba  Ba1  1  0.285  0.249  0.045  1.0
  Ba  Ba2  1  0.780  0.755  0.457  1.0
  Ba  Ba3  1  0.720  0.745  0.957  1.0
  Si  Si4  1  0.854  0.550  0.180  1.0
  Si  Si5  1  0.646  0.950  0.680  1.0
  Si  Si6  1  0.855  0.954  0.183  1.0
  Si  Si7  1  0.645  0.546  0.683  1.0
  Si  Si8  1  0.145  0.459  0.817  1.0
  Si  Si9  1  0.355  0.041  0.317  1.0
  Ge  Ge10  1  0.150  0.044  0.817  1.0
  Ge  Ge11  1  0.350  0.456  0.317  1.0
  O  O12  1  0.345  0.047  0.708  1.0
  O  O13  1  0.155  0.453  0.208  1.0
  O  O14  1  0.675  0.553  0.283  1.0
  O  O15  1  0.825  0.947  0.783  1.0
  O  O16  1  0.653  0.951  0.281  1.0
  O  O17  1  0.847  0.549  0.781  1.0
  O  O18  1  0.347  0.456  0.719  1.0
  O  O19  1  0.153  0.044  0.219  1.0
  O  O20  1  0.268  0.953  0.922  1.0
  O  O21  1  0.232  0.547  0.422  1.0
  O  O22  1  0.728  0.462  0.086  1.0
  O  O23  1  0.772  0.038  0.586  1.0
  O  O24  1  0.740  0.045  0.088  1.0
  O  O25  1  0.760  0.455  0.588  1.0
  O  O26  1  0.262  0.549  0.911  1.0
  O  O27  1  0.238  0.951  0.411  1.0
  O  O28  1  0.067  0.259  0.845  1.0
  O  O29  1  0.433  0.241  0.345  1.0
  O  O30  1  0.925  0.752  0.158  1.0
  O  O31  1  0.575  0.748  0.658  1.0
[/CIF]
.