The compound described by GaTeI7 is Indium-like structured and crystallizes in the monoclinic Pc space group. The structure is zero-dimensional and consists of two GaTeI7 clusters. Ga(1) is bonded to one I(1), one I(2), one I(3), and one I(4) atom to form GaI4 tetrahedra that share  an edgeedge with one Te(1)I5 square pyramid. Te(1) is bonded to one I(3), one I(4), one I(5), one I(6), and one I(7) atom to form distorted TeI5 square pyramids that share  an edgeedge with one Ga(1)I4 tetrahedra. There are seven inequivalent I sites. In the first I site, I(1) is bonded in a single-bond geometry to one Ga(1) atom. In the second I site, I(2) is bonded in a single-bond geometry to one Ga(1) atom. In the third I site, I(3) is bonded in a distorted L-shaped geometry to one Ga(1) and one Te(1) atom. In the fourth I site, I(4) is bonded in a distorted L-shaped geometry to one Ga(1) and one Te(1) atom. In the fifth I site, I(5) is bonded in a single-bond geometry to one Te(1) atom. In the sixth I site, I(6) is bonded in a single-bond geometry to one Te(1) atom. In the seventh I site, I(7) is bonded in a single-bond geometry to one Te(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaTeI7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.415
_cell_length_b   7.276
_cell_length_c   16.531
_cell_angle_alpha   90.000
_cell_angle_beta   103.363
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   867.760
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.287  0.511  0.808  1.0
  Ga  Ga1  1  0.287  0.489  0.308  1.0
  Te  Te2  1  0.002  0.910  0.654  1.0
  Te  Te3  1  0.002  0.090  0.154  1.0
  I  I4  1  0.316  0.162  0.819  1.0
  I  I5  1  0.316  0.838  0.319  1.0
  I  I6  1  0.512  0.664  0.931  1.0
  I  I7  1  0.512  0.336  0.431  1.0
  I  I8  1  0.366  0.625  0.672  1.0
  I  I9  1  0.366  0.375  0.172  1.0
  I  I10  1  0.958  0.622  0.810  1.0
  I  I11  1  0.958  0.378  0.310  1.0
  I  I12  1  0.788  0.668  0.543  1.0
  I  I13  1  0.788  0.332  0.043  1.0
  I  I14  1  0.716  0.125  0.680  1.0
  I  I15  1  0.716  0.875  0.180  1.0
  I  I16  1  0.123  0.120  0.539  1.0
  I  I17  1  0.123  0.880  0.039  1.0
[/CIF]
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The compound described by GaTeI7 is Indium-like structured and crystallizes in the monoclinic Pc space group. The structure is zero-dimensional and consists of two GaTeI7 clusters. Ga(1) is bonded to one I(1), one I(2), one I(3), and one I(4) atom to form GaI4 tetrahedra that share  an edgeedge with one Te(1)I5 square pyramid. Te(1) is bonded to one I(3), one I(4), one I(5), one I(6), and one I(7) atom to form distorted TeI5 square pyramids that share  an edgeedge with one Ga(1)I4 tetrahedra. There are seven inequivalent I sites. In the first I site, I(1) is bonded in a single-bond geometry to one Ga(1) atom. In the second I site, I(2) is bonded in a single-bond geometry to one Ga(1) atom. In the third I site, I(3) is bonded in a distorted L-shaped geometry to one Ga(1) and one Te(1) atom. In the fourth I site, I(4) is bonded in a distorted L-shaped geometry to one Ga(1) and one Te(1) atom. In the fifth I site, I(5) is bonded in a single-bond geometry to one Te(1) atom. In the sixth I site, I(6) is bonded in a single-bond geometry to one Te(1) atom. In the seventh I site, I(7) is bonded in a single-bond geometry to one Te(1) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaTeI7
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.415
_cell_length_b   7.276
_cell_length_c   16.531
_cell_angle_alpha   90.000
_cell_angle_beta   103.363
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   867.760
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.287  0.511  0.808  1.0
  Ga  Ga1  1  0.287  0.489  0.308  1.0
  Te  Te2  1  0.002  0.910  0.654  1.0
  Te  Te3  1  0.002  0.090  0.154  1.0
  I  I4  1  0.316  0.162  0.819  1.0
  I  I5  1  0.316  0.838  0.319  1.0
  I  I6  1  0.512  0.664  0.931  1.0
  I  I7  1  0.512  0.336  0.431  1.0
  I  I8  1  0.366  0.625  0.672  1.0
  I  I9  1  0.366  0.375  0.172  1.0
  I  I10  1  0.958  0.622  0.810  1.0
  I  I11  1  0.958  0.378  0.310  1.0
  I  I12  1  0.788  0.668  0.543  1.0
  I  I13  1  0.788  0.332  0.043  1.0
  I  I14  1  0.716  0.125  0.680  1.0
  I  I15  1  0.716  0.875  0.180  1.0
  I  I16  1  0.123  0.120  0.539  1.0
  I  I17  1  0.123  0.880  0.039  1.0
[/CIF]
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