The compound described by K3Si5H2O11 crystallizes in the monoclinic Cc space group. There are three inequivalent K sites. In the first K site, K(1) is bonded in a 5-coordinate geometry to one O(1), one O(11), one O(3), one O(7), and one O(9) atom. In the second K site, K(2) is bonded in a 8-coordinate geometry to one Si(4), one H(1), one H(2), one O(2), one O(3), one O(5), one O(7), and one O(8) atom. In the third K site, K(3) is bonded in a 6-coordinate geometry to one O(10), one O(2), one O(4), one O(6), one O(7), and one O(8) atom. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(10), one O(3), one O(4), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(11), one O(4), one O(6), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded in a 3-coordinate geometry to one K(2), one O(1), one O(10), and one O(9) atom. In the fifth Si site, Si(5) is bonded to one O(11), one O(2), one O(8), and one O(9) atom to form corner-sharing SiO4 tetrahedra. There are two inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one K(2) and one O(8) atom. In the second H site, H(2) is bonded in a single-bond geometry to one K(2) and one O(3) atom. There are eleven inequivalent O sites. In the first O site, O(1) is bonded in a distorted bent 120 degrees geometry to one K(1), one Si(1), and one Si(4) atom. In the second O site, O(2) is bonded in a distorted bent 120 degrees geometry to one K(2), one K(3), one Si(1), and one Si(5) atom. In the third O site, O(3) is bonded in a distorted water-like geometry to one K(1), one K(2), one Si(2), and one H(2) atom. In the fourth O site, O(4) is bonded in a 2-coordinate geometry to one K(3), one Si(2), and one Si(3) atom. In the fifth O site, O(5) is bonded in a distorted bent 120 degrees geometry to one K(2), one Si(1), and one Si(2) atom. In the sixth O site, O(6) is bonded in a bent 120 degrees geometry to one K(3), one Si(1), and one Si(3) atom. In the seventh O site, O(7) is bonded in a distorted single-bond geometry to one K(1), one K(2), one K(3), and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted water-like geometry to one K(2), one K(3), one Si(5), and one H(1) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one K(1), one Si(4), and one Si(5) atom. In the tenth O site, O(10) is bonded in a distorted bent 150 degrees geometry to one K(3), one Si(2), and one Si(4) atom. In the eleventh O site, O(11) is bonded in a distorted bent 150 degrees geometry to one K(1), one Si(3), and one Si(5) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_K3Si5H2O11
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.610
_cell_length_b   7.610
_cell_length_c   14.057
_cell_angle_alpha   74.819
_cell_angle_beta   74.819
_cell_angle_gamma   63.408
_symmetry_Int_Tables_number   1
_cell_volume   692.699
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.522  0.588  0.033  1.0
  K  K1  1  0.588  0.522  0.533  1.0
  K  K2  1  0.268  0.458  0.355  1.0
  K  K3  1  0.458  0.268  0.855  1.0
  K  K4  1  0.182  0.122  0.227  1.0
  K  K5  1  0.122  0.182  0.727  1.0
  Si  Si6  1  0.813  0.888  0.367  1.0
  Si  Si7  1  0.888  0.813  0.867  1.0
  Si  Si8  1  0.669  0.763  0.735  1.0
  Si  Si9  1  0.763  0.669  0.235  1.0
  Si  Si10  1  0.646  0.117  0.179  1.0
  Si  Si11  1  0.117  0.646  0.679  1.0
  Si  Si12  1  0.535  0.078  0.540  1.0
  Si  Si13  1  0.078  0.535  0.040  1.0
  Si  Si14  1  0.979  0.997  0.997  1.0
  Si  Si15  1  0.997  0.979  0.497  1.0
  H  H16  1  0.181  0.145  0.490  1.0
  H  H17  1  0.145  0.181  0.990  1.0
  H  H18  1  0.424  0.659  0.783  1.0
  H  H19  1  0.659  0.424  0.283  1.0
  O  O20  1  0.636  0.896  0.463  1.0
  O  O21  1  0.896  0.636  0.963  1.0
  O  O22  1  0.010  0.872  0.403  1.0
  O  O23  1  0.872  0.010  0.903  1.0
  O  O24  1  0.605  0.563  0.295  1.0
  O  O25  1  0.563  0.605  0.795  1.0
  O  O26  1  0.629  0.900  0.188  1.0
  O  O27  1  0.900  0.629  0.688  1.0
  O  O28  1  0.872  0.685  0.320  1.0
  O  O29  1  0.685  0.872  0.820  1.0
  O  O30  1  0.759  0.081  0.276  1.0
  O  O31  1  0.081  0.759  0.776  1.0
  O  O32  1  0.439  0.304  0.186  1.0
  O  O33  1  0.304  0.439  0.686  1.0
  O  O34  1  0.104  0.138  0.444  1.0
  O  O35  1  0.138  0.104  0.944  1.0
  O  O36  1  0.762  0.093  0.543  1.0
  O  O37  1  0.093  0.762  0.043  1.0
  O  O38  1  0.526  0.925  0.657  1.0
  O  O39  1  0.925  0.526  0.157  1.0
  O  O40  1  0.804  0.140  0.075  1.0
  O  O41  1  0.140  0.804  0.575  1.0
[/CIF]
.
The compound described by K3Si5H2O11 crystallizes in the monoclinic Cc space group. There are three inequivalent K sites. In the first K site, K(1) is bonded in a 5-coordinate geometry to one O(1), one O(11), one O(3), one O(7), and one O(9) atom. In the second K site, K(2) is bonded in a 8-coordinate geometry to one Si(4), one H(1), one H(2), one O(2), one O(3), one O(5), one O(7), and one O(8) atom. In the third K site, K(3) is bonded in a 6-coordinate geometry to one O(10), one O(2), one O(4), one O(6), one O(7), and one O(8) atom. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(5), and one O(6) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(10), one O(3), one O(4), and one O(5) atom to form corner-sharing SiO4 tetrahedra. In the third Si site, Si(3) is bonded to one O(11), one O(4), one O(6), and one O(7) atom to form corner-sharing SiO4 tetrahedra. In the fourth Si site, Si(4) is bonded in a 3-coordinate geometry to one K(2), one O(1), one O(10), and one O(9) atom. In the fifth Si site, Si(5) is bonded to one O(11), one O(2), one O(8), and one O(9) atom to form corner-sharing SiO4 tetrahedra. There are two inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one K(2) and one O(8) atom. In the second H site, H(2) is bonded in a single-bond geometry to one K(2) and one O(3) atom. There are eleven inequivalent O sites. In the first O site, O(1) is bonded in a distorted bent 120 degrees geometry to one K(1), one Si(1), and one Si(4) atom. In the second O site, O(2) is bonded in a distorted bent 120 degrees geometry to one K(2), one K(3), one Si(1), and one Si(5) atom. In the third O site, O(3) is bonded in a distorted water-like geometry to one K(1), one K(2), one Si(2), and one H(2) atom. In the fourth O site, O(4) is bonded in a 2-coordinate geometry to one K(3), one Si(2), and one Si(3) atom. In the fifth O site, O(5) is bonded in a distorted bent 120 degrees geometry to one K(2), one Si(1), and one Si(2) atom. In the sixth O site, O(6) is bonded in a bent 120 degrees geometry to one K(3), one Si(1), and one Si(3) atom. In the seventh O site, O(7) is bonded in a distorted single-bond geometry to one K(1), one K(2), one K(3), and one Si(3) atom. In the eighth O site, O(8) is bonded in a distorted water-like geometry to one K(2), one K(3), one Si(5), and one H(1) atom. In the ninth O site, O(9) is bonded in a 3-coordinate geometry to one K(1), one Si(4), and one Si(5) atom. In the tenth O site, O(10) is bonded in a distorted bent 150 degrees geometry to one K(3), one Si(2), and one Si(4) atom. In the eleventh O site, O(11) is bonded in a distorted bent 150 degrees geometry to one K(1), one Si(3), and one Si(5) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_K3Si5H2O11
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.610
_cell_length_b   7.610
_cell_length_c   14.057
_cell_angle_alpha   74.819
_cell_angle_beta   74.819
_cell_angle_gamma   63.408
_symmetry_Int_Tables_number   1
_cell_volume   692.699
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  K  K0  1  0.522  0.588  0.033  1.0
  K  K1  1  0.588  0.522  0.533  1.0
  K  K2  1  0.268  0.458  0.355  1.0
  K  K3  1  0.458  0.268  0.855  1.0
  K  K4  1  0.182  0.122  0.227  1.0
  K  K5  1  0.122  0.182  0.727  1.0
  Si  Si6  1  0.813  0.888  0.367  1.0
  Si  Si7  1  0.888  0.813  0.867  1.0
  Si  Si8  1  0.669  0.763  0.735  1.0
  Si  Si9  1  0.763  0.669  0.235  1.0
  Si  Si10  1  0.646  0.117  0.179  1.0
  Si  Si11  1  0.117  0.646  0.679  1.0
  Si  Si12  1  0.535  0.078  0.540  1.0
  Si  Si13  1  0.078  0.535  0.040  1.0
  Si  Si14  1  0.979  0.997  0.997  1.0
  Si  Si15  1  0.997  0.979  0.497  1.0
  H  H16  1  0.181  0.145  0.490  1.0
  H  H17  1  0.145  0.181  0.990  1.0
  H  H18  1  0.424  0.659  0.783  1.0
  H  H19  1  0.659  0.424  0.283  1.0
  O  O20  1  0.636  0.896  0.463  1.0
  O  O21  1  0.896  0.636  0.963  1.0
  O  O22  1  0.010  0.872  0.403  1.0
  O  O23  1  0.872  0.010  0.903  1.0
  O  O24  1  0.605  0.563  0.295  1.0
  O  O25  1  0.563  0.605  0.795  1.0
  O  O26  1  0.629  0.900  0.188  1.0
  O  O27  1  0.900  0.629  0.688  1.0
  O  O28  1  0.872  0.685  0.320  1.0
  O  O29  1  0.685  0.872  0.820  1.0
  O  O30  1  0.759  0.081  0.276  1.0
  O  O31  1  0.081  0.759  0.776  1.0
  O  O32  1  0.439  0.304  0.186  1.0
  O  O33  1  0.304  0.439  0.686  1.0
  O  O34  1  0.104  0.138  0.444  1.0
  O  O35  1  0.138  0.104  0.944  1.0
  O  O36  1  0.762  0.093  0.543  1.0
  O  O37  1  0.093  0.762  0.043  1.0
  O  O38  1  0.526  0.925  0.657  1.0
  O  O39  1  0.925  0.526  0.157  1.0
  O  O40  1  0.804  0.140  0.075  1.0
  O  O41  1  0.140  0.804  0.575  1.0
[/CIF]
.