The crystal structure described by Ga2TeSe2 crystallizes in the tetragonal I4_1md space group. Ga(1) is bonded to one Te(1) and three equivalent Se(1) atoms to form a mixture of distorted edge and corner-sharing GaTeSe3 tetrahedra. Te(1) is bonded in a water-like geometry to two equivalent Ga(1) atoms. Se(1) is bonded in a distorted T-shaped geometry to three equivalent Ga(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga2TeSe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.341
_cell_length_b   7.341
_cell_length_c   7.490
_cell_angle_alpha   119.345
_cell_angle_beta   119.345
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   290.973
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.426  0.651  0.852  1.0
  Ga  Ga1  1  0.451  0.176  0.352  1.0
  Ga  Ga2  1  0.901  0.176  0.352  1.0
  Ga  Ga3  1  0.426  0.201  0.852  1.0
  Te  Te4  1  0.029  0.029  0.057  1.0
  Te  Te5  1  0.279  0.779  0.557  1.0
  Se  Se6  1  0.650  0.902  0.300  1.0
  Se  Se7  1  0.648  0.400  0.800  1.0
  Se  Se8  1  0.152  0.400  0.800  1.0
  Se  Se9  1  0.650  0.398  0.300  1.0
[/CIF]
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The crystal structure described by Ga2TeSe2 crystallizes in the tetragonal I4_1md space group. Ga(1) is bonded to one Te(1) and three equivalent Se(1) atoms to form a mixture of distorted edge and corner-sharing GaTeSe3 tetrahedra. Te(1) is bonded in a water-like geometry to two equivalent Ga(1) atoms. Se(1) is bonded in a distorted T-shaped geometry to three equivalent Ga(1) atoms. is represented by the Crystallographic Information File (CIF) [CIF]
data_Ga2TeSe2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.341
_cell_length_b   7.341
_cell_length_c   7.490
_cell_angle_alpha   119.345
_cell_angle_beta   119.345
_cell_angle_gamma   90.000
_symmetry_Int_Tables_number   1
_cell_volume   290.973
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.426  0.651  0.852  1.0
  Ga  Ga1  1  0.451  0.176  0.352  1.0
  Ga  Ga2  1  0.901  0.176  0.352  1.0
  Ga  Ga3  1  0.426  0.201  0.852  1.0
  Te  Te4  1  0.029  0.029  0.057  1.0
  Te  Te5  1  0.279  0.779  0.557  1.0
  Se  Se6  1  0.650  0.902  0.300  1.0
  Se  Se7  1  0.648  0.400  0.800  1.0
  Se  Se8  1  0.152  0.400  0.800  1.0
  Se  Se9  1  0.650  0.398  0.300  1.0
[/CIF]
.