The material described by SiO2 crystallizes in the monoclinic C2 space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the second O site, O(2) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.441
_cell_length_b   5.441
_cell_length_c   5.463
_cell_angle_alpha   97.104
_cell_angle_beta   97.104
_cell_angle_gamma   100.652
_symmetry_Int_Tables_number   1
_cell_volume   155.922
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.284  0.283  0.711  1.0
  Si  Si1  1  0.144  0.394  0.208  1.0
  Si  Si2  1  0.717  0.716  0.289  1.0
  Si  Si3  1  0.606  0.856  0.792  1.0
  O  O4  1  0.742  0.904  0.081  1.0
  O  O5  1  0.422  0.577  0.250  1.0
  O  O6  1  0.911  0.532  0.243  1.0
  O  O7  1  0.468  0.089  0.757  1.0
  O  O8  1  0.788  0.848  0.579  1.0
  O  O9  1  0.423  0.578  0.750  1.0
  O  O10  1  0.096  0.258  0.919  1.0
  O  O11  1  0.152  0.212  0.421  1.0
[/CIF]
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The material described by SiO2 crystallizes in the monoclinic C2 space group. There are two inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. In the second Si site, Si(2) is bonded to one O(1), one O(2), one O(3), and one O(4) atom to form corner-sharing SiO4 tetrahedra. There are four inequivalent O sites. In the first O site, O(1) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the second O site, O(2) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the third O site, O(3) is bonded in a linear geometry to one Si(1) and one Si(2) atom. In the fourth O site, O(4) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_SiO2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.441
_cell_length_b   5.441
_cell_length_c   5.463
_cell_angle_alpha   97.104
_cell_angle_beta   97.104
_cell_angle_gamma   100.652
_symmetry_Int_Tables_number   1
_cell_volume   155.922
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.284  0.283  0.711  1.0
  Si  Si1  1  0.144  0.394  0.208  1.0
  Si  Si2  1  0.717  0.716  0.289  1.0
  Si  Si3  1  0.606  0.856  0.792  1.0
  O  O4  1  0.742  0.904  0.081  1.0
  O  O5  1  0.422  0.577  0.250  1.0
  O  O6  1  0.911  0.532  0.243  1.0
  O  O7  1  0.468  0.089  0.757  1.0
  O  O8  1  0.788  0.848  0.579  1.0
  O  O9  1  0.423  0.578  0.750  1.0
  O  O10  1  0.096  0.258  0.919  1.0
  O  O11  1  0.152  0.212  0.421  1.0
[/CIF]
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