The material described by TcGa crystallizes in the hexagonal P-6m2 space group. Tc(1) is bonded to six equivalent Tc(1) and six equivalent Ga(1) atoms to form distorted TcGa6Tc6 cuboctahedra that share corners with eighteen equivalent Tc(1)Ga6Tc6 cuboctahedra, edges with six equivalent Tc(1)Ga6Tc6 cuboctahedra, edges with twelve equivalent Ga(1)Ga6Tc6 cuboctahedra, faces with eight equivalent Tc(1)Ga6Tc6 cuboctahedra, and faces with twelve equivalent Ga(1)Ga6Tc6 cuboctahedra. Ga(1) is bonded to six equivalent Tc(1) and six equivalent Ga(1) atoms to form distorted GaGa6Tc6 cuboctahedra that share corners with eighteen equivalent Ga(1)Ga6Tc6 cuboctahedra, edges with six equivalent Ga(1)Ga6Tc6 cuboctahedra, edges with twelve equivalent Tc(1)Ga6Tc6 cuboctahedra, faces with eight equivalent Ga(1)Ga6Tc6 cuboctahedra, and faces with twelve equivalent Tc(1)Ga6Tc6 cuboctahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaTc
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   2.859
_cell_length_b   2.859
_cell_length_c   4.076
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   119.999
_symmetry_Int_Tables_number   1
_cell_volume   28.853
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.667  0.333  0.750  1.0
  Tc  Tc1  1  0.333  0.667  0.250  1.0
[/CIF]
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The material described by TcGa crystallizes in the hexagonal P-6m2 space group. Tc(1) is bonded to six equivalent Tc(1) and six equivalent Ga(1) atoms to form distorted TcGa6Tc6 cuboctahedra that share corners with eighteen equivalent Tc(1)Ga6Tc6 cuboctahedra, edges with six equivalent Tc(1)Ga6Tc6 cuboctahedra, edges with twelve equivalent Ga(1)Ga6Tc6 cuboctahedra, faces with eight equivalent Tc(1)Ga6Tc6 cuboctahedra, and faces with twelve equivalent Ga(1)Ga6Tc6 cuboctahedra. Ga(1) is bonded to six equivalent Tc(1) and six equivalent Ga(1) atoms to form distorted GaGa6Tc6 cuboctahedra that share corners with eighteen equivalent Ga(1)Ga6Tc6 cuboctahedra, edges with six equivalent Ga(1)Ga6Tc6 cuboctahedra, edges with twelve equivalent Tc(1)Ga6Tc6 cuboctahedra, faces with eight equivalent Ga(1)Ga6Tc6 cuboctahedra, and faces with twelve equivalent Tc(1)Ga6Tc6 cuboctahedra. is represented by the Crystallographic Information File (CIF) [CIF]
data_GaTc
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   2.859
_cell_length_b   2.859
_cell_length_c   4.076
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   119.999
_symmetry_Int_Tables_number   1
_cell_volume   28.853
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.667  0.333  0.750  1.0
  Tc  Tc1  1  0.333  0.667  0.250  1.0
[/CIF]
.