The structure described by Li2V(Si2O5)3 crystallizes in the triclinic P-1 space group. Li(1) is bonded in a 4-coordinate geometry to one O(3), one O(8), and two equivalent O(4) atoms. V(1) is bonded to two equivalent O(2), two equivalent O(4), and two equivalent O(8) atoms to form VO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent Si(3)O4 tetrahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(2), one O(3), one O(5), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles are 37°. In the second Si site, Si(2) is bonded to one O(3), one O(4), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and corners with two equivalent Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles are 56°. In the third Si site, Si(3) is bonded to one O(1), one O(5), one O(6), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles are 41°. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to two equivalent Si(3) atoms. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one V(1) and one Si(1) atom. In the third O site, O(3) is bonded in a distorted T-shaped geometry to one Li(1), one Si(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted rectangular see-saw-like geometry to two equivalent Li(1), one V(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the sixth O site, O(6) is bonded in a bent 120 degrees geometry to one Si(2) and one Si(3) atom. In the seventh O site, O(7) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Li(1), one V(1), and one Si(3) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Li2V(Si2O5)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.848
_cell_length_b   7.337
_cell_length_c   7.424
_cell_angle_alpha   95.388
_cell_angle_beta   112.167
_cell_angle_gamma   113.605
_symmetry_Int_Tables_number   1
_cell_volume   303.039
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.737  0.183  0.140  1.0
  Li  Li1  1  0.263  0.817  0.860  1.0
  O  O2  1  0.500  0.500  0.500  1.0
  O  O3  1  0.836  0.054  0.767  1.0
  O  O4  1  0.164  0.946  0.233  1.0
  O  O5  1  0.306  0.975  0.634  1.0
  O  O6  1  0.695  0.025  0.366  1.0
  O  O7  1  0.320  0.122  0.972  1.0
  O  O8  1  0.680  0.878  0.027  1.0
  O  O9  1  0.825  0.375  0.612  1.0
  O  O10  1  0.175  0.625  0.388  1.0
  O  O11  1  0.607  0.379  0.839  1.0
  O  O12  1  0.393  0.621  0.161  1.0
  O  O13  1  0.147  0.257  0.640  1.0
  O  O14  1  0.853  0.743  0.360  1.0
  O  O15  1  0.063  0.267  0.168  1.0
  O  O16  1  0.937  0.733  0.833  1.0
  Si  Si17  1  0.870  0.175  0.601  1.0
  Si  Si18  1  0.130  0.825  0.399  1.0
  Si  Si19  1  0.342  0.188  0.776  1.0
  Si  Si20  1  0.658  0.812  0.224  1.0
  Si  Si21  1  0.717  0.505  0.697  1.0
  Si  Si22  1  0.283  0.495  0.303  1.0
  V  V23  1  1.000  1.000  1.000  1.0
[/CIF]
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The structure described by Li2V(Si2O5)3 crystallizes in the triclinic P-1 space group. Li(1) is bonded in a 4-coordinate geometry to one O(3), one O(8), and two equivalent O(4) atoms. V(1) is bonded to two equivalent O(2), two equivalent O(4), and two equivalent O(8) atoms to form VO6 octahedra that share corners with two equivalent Si(1)O4 tetrahedra, corners with two equivalent Si(2)O4 tetrahedra, and corners with two equivalent Si(3)O4 tetrahedra. There are three inequivalent Si sites. In the first Si site, Si(1) is bonded to one O(2), one O(3), one O(5), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and corners with two equivalent Si(2)O4 tetrahedra. The corner-sharing octahedral tilt angles are 37°. In the second Si site, Si(2) is bonded to one O(3), one O(4), one O(6), and one O(7) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one Si(3)O4 tetrahedra, and corners with two equivalent Si(1)O4 tetrahedra. The corner-sharing octahedral tilt angles are 56°. In the third Si site, Si(3) is bonded to one O(1), one O(5), one O(6), and one O(8) atom to form SiO4 tetrahedra that share  a cornercorner with one V(1)O6 octahedra,  a cornercorner with one Si(1)O4 tetrahedra,  a cornercorner with one Si(2)O4 tetrahedra, and  a cornercorner with one Si(3)O4 tetrahedra. The corner-sharing octahedral tilt angles are 41°. There are eight inequivalent O sites. In the first O site, O(1) is bonded in a linear geometry to two equivalent Si(3) atoms. In the second O site, O(2) is bonded in a bent 150 degrees geometry to one V(1) and one Si(1) atom. In the third O site, O(3) is bonded in a distorted T-shaped geometry to one Li(1), one Si(1), and one Si(2) atom. In the fourth O site, O(4) is bonded in a distorted rectangular see-saw-like geometry to two equivalent Li(1), one V(1), and one Si(2) atom. In the fifth O site, O(5) is bonded in a bent 150 degrees geometry to one Si(1) and one Si(3) atom. In the sixth O site, O(6) is bonded in a bent 120 degrees geometry to one Si(2) and one Si(3) atom. In the seventh O site, O(7) is bonded in a bent 120 degrees geometry to one Si(1) and one Si(2) atom. In the eighth O site, O(8) is bonded in a distorted trigonal planar geometry to one Li(1), one V(1), and one Si(3) atom. is represented by the Crystallographic Information File (CIF) [CIF]
data_Li2V(Si2O5)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.848
_cell_length_b   7.337
_cell_length_c   7.424
_cell_angle_alpha   95.388
_cell_angle_beta   112.167
_cell_angle_gamma   113.605
_symmetry_Int_Tables_number   1
_cell_volume   303.039
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Li  Li0  1  0.737  0.183  0.140  1.0
  Li  Li1  1  0.263  0.817  0.860  1.0
  O  O2  1  0.500  0.500  0.500  1.0
  O  O3  1  0.836  0.054  0.767  1.0
  O  O4  1  0.164  0.946  0.233  1.0
  O  O5  1  0.306  0.975  0.634  1.0
  O  O6  1  0.695  0.025  0.366  1.0
  O  O7  1  0.320  0.122  0.972  1.0
  O  O8  1  0.680  0.878  0.027  1.0
  O  O9  1  0.825  0.375  0.612  1.0
  O  O10  1  0.175  0.625  0.388  1.0
  O  O11  1  0.607  0.379  0.839  1.0
  O  O12  1  0.393  0.621  0.161  1.0
  O  O13  1  0.147  0.257  0.640  1.0
  O  O14  1  0.853  0.743  0.360  1.0
  O  O15  1  0.063  0.267  0.168  1.0
  O  O16  1  0.937  0.733  0.833  1.0
  Si  Si17  1  0.870  0.175  0.601  1.0
  Si  Si18  1  0.130  0.825  0.399  1.0
  Si  Si19  1  0.342  0.188  0.776  1.0
  Si  Si20  1  0.658  0.812  0.224  1.0
  Si  Si21  1  0.717  0.505  0.697  1.0
  Si  Si22  1  0.283  0.495  0.303  1.0
  V  V23  1  1.000  1.000  1.000  1.0
[/CIF]
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