The material structure described by Ga(OH)3 crystallizes in the trigonal R-3 space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(2) and four equivalent O(1) atoms to form corner-sharing GaO6 octahedra. The corner-sharing octahedral tilt angles range from 41-43°. In the second Ga site, Ga(2) is bonded to six equivalent O(2) atoms to form corner-sharing GaO6 octahedra. The corner-sharing octahedral tilt angles are 41°. There are two inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one O(1) atom. In the second H site, H(2) is bonded in a distorted single-bond geometry to one O(2) atom. There are two inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to two equivalent Ga(1) and one H(1) atom. In the second O site, O(2) is bonded in a distorted single-bond geometry to one Ga(1), one Ga(2), and one H(2) atom. is represented by the CIF file [CIF]
data_Ga(HO)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.459
_cell_length_b   6.459
_cell_length_c   6.459
_cell_angle_alpha   109.701
_cell_angle_beta   109.701
_cell_angle_gamma   109.701
_symmetry_Int_Tables_number   1
_cell_volume   205.693
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.000  0.000  1.0
  Ga  Ga1  1  0.500  0.500  0.500  1.0
  Ga  Ga2  1  0.000  0.000  0.500  1.0
  Ga  Ga3  1  0.000  0.500  0.000  1.0
  H  H4  1  0.816  0.451  0.268  1.0
  H  H5  1  0.043  0.301  0.344  1.0
  H  H6  1  0.957  0.699  0.656  1.0
  H  H7  1  0.184  0.549  0.732  1.0
  H  H8  1  0.732  0.184  0.549  1.0
  H  H9  1  0.656  0.957  0.699  1.0
  H  H10  1  0.344  0.043  0.301  1.0
  H  H11  1  0.268  0.816  0.451  1.0
  H  H12  1  0.301  0.344  0.043  1.0
  H  H13  1  0.451  0.268  0.816  1.0
  H  H14  1  0.549  0.732  0.184  1.0
  H  H15  1  0.699  0.656  0.957  1.0
  O  O16  1  0.819  0.316  0.140  1.0
  O  O17  1  0.176  0.308  0.485  1.0
  O  O18  1  0.824  0.692  0.515  1.0
  O  O19  1  0.181  0.684  0.860  1.0
  O  O20  1  0.860  0.181  0.684  1.0
  O  O21  1  0.515  0.824  0.692  1.0
  O  O22  1  0.485  0.176  0.308  1.0
  O  O23  1  0.140  0.819  0.316  1.0
  O  O24  1  0.308  0.485  0.176  1.0
  O  O25  1  0.316  0.140  0.819  1.0
  O  O26  1  0.684  0.860  0.181  1.0
  O  O27  1  0.692  0.515  0.824  1.0
[/CIF]
.
The material structure described by Ga(OH)3 crystallizes in the trigonal R-3 space group. There are two inequivalent Ga sites. In the first Ga site, Ga(1) is bonded to two equivalent O(2) and four equivalent O(1) atoms to form corner-sharing GaO6 octahedra. The corner-sharing octahedral tilt angles range from 41-43°. In the second Ga site, Ga(2) is bonded to six equivalent O(2) atoms to form corner-sharing GaO6 octahedra. The corner-sharing octahedral tilt angles are 41°. There are two inequivalent H sites. In the first H site, H(1) is bonded in a single-bond geometry to one O(1) atom. In the second H site, H(2) is bonded in a distorted single-bond geometry to one O(2) atom. There are two inequivalent O sites. In the first O site, O(1) is bonded in a distorted single-bond geometry to two equivalent Ga(1) and one H(1) atom. In the second O site, O(2) is bonded in a distorted single-bond geometry to one Ga(1), one Ga(2), and one H(2) atom. is represented by the CIF file [CIF]
data_Ga(HO)3
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   6.459
_cell_length_b   6.459
_cell_length_c   6.459
_cell_angle_alpha   109.701
_cell_angle_beta   109.701
_cell_angle_gamma   109.701
_symmetry_Int_Tables_number   1
_cell_volume   205.693
_cell_formula_units_Z   4
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.500  0.000  0.000  1.0
  Ga  Ga1  1  0.500  0.500  0.500  1.0
  Ga  Ga2  1  0.000  0.000  0.500  1.0
  Ga  Ga3  1  0.000  0.500  0.000  1.0
  H  H4  1  0.816  0.451  0.268  1.0
  H  H5  1  0.043  0.301  0.344  1.0
  H  H6  1  0.957  0.699  0.656  1.0
  H  H7  1  0.184  0.549  0.732  1.0
  H  H8  1  0.732  0.184  0.549  1.0
  H  H9  1  0.656  0.957  0.699  1.0
  H  H10  1  0.344  0.043  0.301  1.0
  H  H11  1  0.268  0.816  0.451  1.0
  H  H12  1  0.301  0.344  0.043  1.0
  H  H13  1  0.451  0.268  0.816  1.0
  H  H14  1  0.549  0.732  0.184  1.0
  H  H15  1  0.699  0.656  0.957  1.0
  O  O16  1  0.819  0.316  0.140  1.0
  O  O17  1  0.176  0.308  0.485  1.0
  O  O18  1  0.824  0.692  0.515  1.0
  O  O19  1  0.181  0.684  0.860  1.0
  O  O20  1  0.860  0.181  0.684  1.0
  O  O21  1  0.515  0.824  0.692  1.0
  O  O22  1  0.485  0.176  0.308  1.0
  O  O23  1  0.140  0.819  0.316  1.0
  O  O24  1  0.308  0.485  0.176  1.0
  O  O25  1  0.316  0.140  0.819  1.0
  O  O26  1  0.684  0.860  0.181  1.0
  O  O27  1  0.692  0.515  0.824  1.0
[/CIF]
.