The material structure described by Si(Sn3O4)2 crystallizes in the hexagonal P6_3mc space group. There are two inequivalent Sn sites. In the first Sn site, Sn(1) is bonded in a 4-coordinate geometry to one O(1), one O(3), and two equivalent O(2) atoms. In the second Sn site, Sn(2) is bonded in a 4-coordinate geometry to one O(2), one O(4), and two equivalent O(1) atoms. Si(1) is bonded in a tetrahedral geometry to one O(4) and three equivalent O(2) atoms. There are four inequivalent O sites. In the first O site, O(1) is bonded in a trigonal non-coplanar geometry to one Sn(1) and two equivalent Sn(2) atoms. In the second O site, O(2) is bonded in a distorted rectangular see-saw-like geometry to one Sn(2), two equivalent Sn(1), and one Si(1) atom. In the third O site, O(3) is bonded in a trigonal planar geometry to three equivalent Sn(1) atoms. In the fourth O site, O(4) is bonded in a distorted single-bond geometry to three equivalent Sn(2) and one Si(1) atom. is represented by the CIF file [CIF]
data_Si(Sn3O4)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.310
_cell_length_b   7.310
_cell_length_c   11.853
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   548.577
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.667  0.333  0.095  1.0
  Si  Si1  1  0.333  0.667  0.595  1.0
  Sn  Sn2  1  0.172  0.343  0.094  1.0
  Sn  Sn3  1  0.989  0.495  0.351  1.0
  Sn  Sn4  1  0.495  0.989  0.851  1.0
  Sn  Sn5  1  0.343  0.172  0.594  1.0
  Sn  Sn6  1  0.657  0.828  0.094  1.0
  Sn  Sn7  1  0.011  0.505  0.851  1.0
  Sn  Sn8  1  0.828  0.657  0.594  1.0
  Sn  Sn9  1  0.495  0.505  0.851  1.0
  Sn  Sn10  1  0.505  0.495  0.351  1.0
  Sn  Sn11  1  0.505  0.011  0.351  1.0
  Sn  Sn12  1  0.828  0.172  0.594  1.0
  Sn  Sn13  1  0.172  0.828  0.094  1.0
  O  O14  1  0.807  0.615  0.419  1.0
  O  O15  1  0.544  0.456  0.048  1.0
  O  O16  1  0.333  0.667  0.116  1.0
  O  O17  1  0.544  0.088  0.048  1.0
  O  O18  1  0.615  0.807  0.919  1.0
  O  O19  1  0.456  0.912  0.548  1.0
  O  O20  1  0.667  0.333  0.616  1.0
  O  O21  1  0.807  0.193  0.419  1.0
  O  O22  1  0.193  0.385  0.919  1.0
  O  O23  1  0.333  0.667  0.734  1.0
  O  O24  1  0.667  0.333  0.234  1.0
  O  O25  1  0.088  0.544  0.548  1.0
  O  O26  1  0.385  0.193  0.419  1.0
  O  O27  1  0.456  0.544  0.548  1.0
  O  O28  1  0.912  0.456  0.048  1.0
  O  O29  1  0.193  0.807  0.919  1.0
[/CIF]
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The material structure described by Si(Sn3O4)2 crystallizes in the hexagonal P6_3mc space group. There are two inequivalent Sn sites. In the first Sn site, Sn(1) is bonded in a 4-coordinate geometry to one O(1), one O(3), and two equivalent O(2) atoms. In the second Sn site, Sn(2) is bonded in a 4-coordinate geometry to one O(2), one O(4), and two equivalent O(1) atoms. Si(1) is bonded in a tetrahedral geometry to one O(4) and three equivalent O(2) atoms. There are four inequivalent O sites. In the first O site, O(1) is bonded in a trigonal non-coplanar geometry to one Sn(1) and two equivalent Sn(2) atoms. In the second O site, O(2) is bonded in a distorted rectangular see-saw-like geometry to one Sn(2), two equivalent Sn(1), and one Si(1) atom. In the third O site, O(3) is bonded in a trigonal planar geometry to three equivalent Sn(1) atoms. In the fourth O site, O(4) is bonded in a distorted single-bond geometry to three equivalent Sn(2) and one Si(1) atom. is represented by the CIF file [CIF]
data_Si(Sn3O4)2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   7.310
_cell_length_b   7.310
_cell_length_c   11.853
_cell_angle_alpha   90.000
_cell_angle_beta   90.000
_cell_angle_gamma   120.000
_symmetry_Int_Tables_number   1
_cell_volume   548.577
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.667  0.333  0.095  1.0
  Si  Si1  1  0.333  0.667  0.595  1.0
  Sn  Sn2  1  0.172  0.343  0.094  1.0
  Sn  Sn3  1  0.989  0.495  0.351  1.0
  Sn  Sn4  1  0.495  0.989  0.851  1.0
  Sn  Sn5  1  0.343  0.172  0.594  1.0
  Sn  Sn6  1  0.657  0.828  0.094  1.0
  Sn  Sn7  1  0.011  0.505  0.851  1.0
  Sn  Sn8  1  0.828  0.657  0.594  1.0
  Sn  Sn9  1  0.495  0.505  0.851  1.0
  Sn  Sn10  1  0.505  0.495  0.351  1.0
  Sn  Sn11  1  0.505  0.011  0.351  1.0
  Sn  Sn12  1  0.828  0.172  0.594  1.0
  Sn  Sn13  1  0.172  0.828  0.094  1.0
  O  O14  1  0.807  0.615  0.419  1.0
  O  O15  1  0.544  0.456  0.048  1.0
  O  O16  1  0.333  0.667  0.116  1.0
  O  O17  1  0.544  0.088  0.048  1.0
  O  O18  1  0.615  0.807  0.919  1.0
  O  O19  1  0.456  0.912  0.548  1.0
  O  O20  1  0.667  0.333  0.616  1.0
  O  O21  1  0.807  0.193  0.419  1.0
  O  O22  1  0.193  0.385  0.919  1.0
  O  O23  1  0.333  0.667  0.734  1.0
  O  O24  1  0.667  0.333  0.234  1.0
  O  O25  1  0.088  0.544  0.548  1.0
  O  O26  1  0.385  0.193  0.419  1.0
  O  O27  1  0.456  0.544  0.548  1.0
  O  O28  1  0.912  0.456  0.048  1.0
  O  O29  1  0.193  0.807  0.919  1.0
[/CIF]
.