Note 1: Repetitive peak off-state voltage in 3A001.h includes
drain to source voltage, collector to emitter voltage, repetitive
peak reverse voltage and peak repetitive off-state blocking voltage.

    Note 2: 3A001.h. includes:
    --Junction Field Effect Transistors (JFETs);
    --Vertical Junction Field Effect Transistors (VJFETs);
    --Metal Oxide Semiconductor Field Effect Transistors (MOSFETs);
    --Double Diffused Metal Oxide Semiconductor Field Effect
Transistor (DMOSFET);
    --Insulated Gate Bipolar Transistor (IGBT);
    --High Electron Mobility Transistors (HEMTs);
    --Bipolar Junction Transistors (BJTs);
    --Thyristors and Silicon Controlled Rectifiers (SCRs);

    --Gate Turn-Off Thyristors (GTOs);
    --Emitter Turn-Off Thyristors (ETOs);
    --PiN Diodes;
    --Schottky Diodes.

    Note 3: 3A001.h does not apply to switches, diodes, or
`modules', incorporated into equipment designed for civil
automobile, civil railway, or ``civil aircraft'' applications.

0
18. In Supplement No. 1 to part 774, Category 3, ECCN 3A002 is revised
to read as follows:

3A002 General Purpose ``Electronic Assemblies,'' Modules and
Equipment, as Follows (See List of Items Controlled).

License Requirements

Reason for Control: NS, MT, AT

                                            Country chart (see Supp. No.
                Control(s)                         1 to part 738)

NS applies to entire entry................  NS Column 2
MT applies to 3A002.h when the parameters   MT Column 1
 in 3A101.a.2.b are met or exceeded.
AT applies to entire entry................  AT Column 1

Reporting Requirements

    See Sec.  743.1 of the EAR for reporting requirements for
exports under License Exceptions, and Validated End-User
authorizations.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: $3,000: 3A002.a, .e, .f, and .g $5,000: 3A002.c to .d, and .h
(unless controlled for MT);
GBS: Yes, for 3A002.h (unless controlled for MT)

Special Conditions for STA

STA: License Exception STA may not be used to ship any item in
3A002.g.1 to any of the destinations listed in Country Group A:6
(See Supplement No.1 to part 740 of the EAR).

List of Items Controlled

Related Controls: See Category XV(e)(9) of the USML for certain
``space-qualified'' atomic frequency standards ``subject to the
ITAR'' (see 22 CFR parts 120 through 130). See also 3A101, 3A992 and
9A515.x.
Related Definitions: Constant percentage bandwidth filters are also
known as octave or fractional octave filters.
Items:
    a. Recording equipment and oscilloscopes, as follows:
    a.1. to a.5. [Reserved]
    N.B.: For waveform digitizers and transient recorders, see
3A002.h.
    a.6. Digital data recorders having all of the following:
    a.6.a. A sustained `continuous throughput' of more than 6.4
Gbit/s to disk or solid-state drive memory; and
    a.6.b. ``Signal processing'' of the radio frequency signal data
while it is being recorded;

    Technical Notes:

    1. For recorders with a parallel bus architecture, the
`continuous throughput' rate is the highest word rate multiplied by
the number of bits in a word.
    2. `Continuous throughput' is the fastest data rate the
instrument can record to disk or solid-state drive memory without
the loss of any information while sustaining the input digital data
rate or digitizer conversion rate.
    a.7. Real-time oscilloscopes having a vertical root-mean-square
(rms) noise voltage of less than 2% of full-scale at the vertical
scale setting that provides the lowest noise value for any input 3dB
bandwidth of 60 GHz or greater per channel;

    Note:  3A002.a.7 does not apply to equivalent-time sampling
oscilloscopes.

    b. [Reserved]
    c. ``Signal analyzers'' as follows:
    c.1. ``Signal analyzers'' having a 3 dB resolution bandwidth
(RBW) exceeding 10 MHz anywhere within the frequency range exceeding
31.8 GHz but not exceeding 37 GHz;
    c.2. ``Signal analyzers'' having Displayed Average Noise Level
(DANL) less (better) than -150 dBm/Hz anywhere within the frequency
range exceeding 43.5 GHz but not exceeding 90 GHz;
    c.3. ``Signal analyzers'' having a frequency exceeding 90 GHz;
    c.4. ``Signal analyzers'' having all of the following:
    c.4.a. ``Real-time bandwidth'' exceeding 170 MHz; and
    c.4.b. Having any of the following:
    c.4.b.1. 100% probability of discovery, with less than a 3 dB
reduction from full amplitude due to gaps or windowing effects, of
signals having a duration of 15 [mu]s or less; or
    c.4.b.2. A ``frequency mask trigger'' function, with 100%
probability of trigger (capture) for signals having a duration of 15
[mu]s or less;

    Technical Notes:

    1. Probability of discovery in 3A002.c.4.b.1 is also referred to
as probability of intercept or probability of capture.
    2. For the purposes of 3A002.c.4.b.1, the duration for 100%
probability of discovery is equivalent to the minimum signal
duration necessary for the specified level measurement uncertainty.

    Note: 3A002.c.4 does not apply to those ``signal analyzers''
using only constant percentage bandwidth filters (also known as
octave or fractional octave filters).

    c.5. [Reserved]
    d. Signal generators having any of the following:
    d.1. Specified to generate pulse-modulated signals having all of
the following, anywhere within the frequency range exceeding 31.8
GHz but not exceeding 37 GHz:
    d.1.a. `Pulse duration' of less than 25 ns; and
    d.1.b. On/off ratio equal to or exceeding 65 dB;
    d.2. An output power exceeding 100 mW (20 dBm) anywhere within
the frequency range exceeding 43.5 GHz but not exceeding 90 GHz;
    d.3. A ``frequency switching time'' as specified by any of the
following:
    d.3.a. [Reserved]
    d.3.b. Less than 100 [mu]s for any frequency change exceeding
2.2 GHz within the frequency range exceeding 4.8 GHz but not
exceeding 31.8 GHz;
    d.3.c. [Reserved]
    d.3.d. Less than 500 [mu]s for any frequency change exceeding
550 MHz within the frequency range exceeding 31.8 GHz but not
exceeding 37 GHz; or
    d.3.e. Less than 100 [mu]s for any frequency change exceeding
2.2 GHz within the frequency range exceeding 37 GHz but not
exceeding 90 GHz;
    d.3.f. [Reserved]
    d.4. Single sideband (SSB) phase noise, in dBc/Hz, specified as
being any of the following:
    d.4.a. Less (better) than -(126 + 20 log10 F-
20log10f) for anywhere within the range of 10 Hz <= F <=
10 kHz anywhere within the frequency range exceeding 3.2 GHz but not
exceeding 90 GHz; or
    d.4.b. Less (better) than -(206-20log10f) for
anywhere within the range of 10 kHz < F <= 100 kHz anywhere within
the frequency range exceeding 3.2 GHz but not exceeding 90 GHz;

    Technical Note: In 3A002.d.4, F is the offset from the operating
frequency in Hz and f is the operating frequency in MHz.

    d.5. An `RF modulation bandwidth' of digital baseband signals as
specified by any of the following:
    d.5.a. Exceeding 2.2 GHz within the frequency range exceeding
4.8 GHz but not exceeding 31.8 GHz;
    d.5.b. Exceeding 550 MHz within the frequency range exceeding
31.8 GHz but not exceeding 37 GHz; or
    d.5.c. Exceeding 2.2 GHz within the frequency range exceeding 37
GHz but not exceeding 90 GHz; or

    Technical Note: `RF modulation bandwidth' is the Radio Frequency
(RF) bandwidth occupied by a digitally encoded baseband signal
modulated onto an RF signal. It is also referred to as information
bandwidth or vector modulation bandwidth. I/Q digital modulation is
the technical method for producing a vector-modulated RF output
signal, and that output signal is typically specified as having an
`RF modulation bandwidth'.

    d.6. A maximum frequency exceeding 90 GHz; Note 1: For the
purpose of 3A002.d, signal generators include arbitrary waveform and
function generators.

    Note 2: 3A002.d does not control equipment in which the output
frequency is either produced by the addition or subtraction of two
or more crystal oscillator frequencies, or by an addition or
subtraction followed by a multiplication of the result.

    Technical Notes:

    1. The maximum frequency of an arbitrary waveform or function
generator is calculated by dividing the sample rate, in samples/
second, by a factor of 2.5.
    2. For the purposes of 3A002.d.1.a, `pulse duration' is defined
as the time interval from the point on the leading edge that is 50%
of

the pulse amplitude to the point on the trailing edge that is 50% of
the pulse amplitude.
    e. Network analyzers having any of the following:
    e.1. An output power exceeding 31.62 mW (15 dBm) anywhere within
the operating frequency range exceeding 43.5 GHz but not exceeding
90 GHz;
    e.2. An output power exceeding 1 mW (0 dBm) anywhere within the
operating frequency range exceeding 90 GHz but not exceeding 110
GHz;
    e.3. `Nonlinear vector measurement functionality' at frequencies
exceeding 50 GHz but not exceeding 110 GHz; or

    Technical Note: `Nonlinear vector measurement functionality' is
an instrument's ability to analyze the test results of devices
driven into the large-signal domain or the non-linear distortion
range.

    e.4. A maximum operating frequency exceeding 110 GHz;
    f. Microwave test receivers having all of the following:
    f.1. Maximum operating frequency exceeding 110 GHz; and
    f.2. Being capable of measuring amplitude and phase
simultaneously;
    g. Atomic frequency standards being any of the following:
    g.1. ``Space-qualified'';
    g.2. Non-rubidium and having a long-term stability less (better)
than 1 x 10-\11\/month; or
    g.3. Non-''space-qualified'' and having all of the following:
    g.3.a. Being a rubidium standard;
    g.3.b. Long-term stability less (better) than 1 x
10-\11\/month; and
    g.3.c. Total power consumption of less than 1 Watt.
    h. ``Electronic assemblies,'' modules or equipment, specified to
perform all of the following:
    h.1. Analog-to-digital conversions meeting any of the following:
    h.1.a. A resolution of 8 bit or more, but less than 10 bit, with
an input sample rate greater than 1.3 billion samples per second;
    h.1.b. A resolution of 10 bit or more, but less than 12 bit,
with an input sample rate greater than 1.0 billion samples per
second;
    h.1.c. A resolution of 12 bit or more, but less than 14 bit,
with an input sample rate greater than 1.0 billion samples per
second;
    h.1.d. A resolution of 14 bit or more but less than 16 bit, with
an input sample rate greater than 400 million samples per second; or
    h.1.e. A resolution of 16 bit or more with an input sample rate
greater than 180 million samples per second; and
    h.2. Any of the following:
    h.2.a. Output of digitized data;
    h.2.b. Storage of digitized data; or
    h.2.c. Processing of digitized data;
    N.B.: Digital data recorders, oscilloscopes, ``signal
analyzers,'' signal generators, network analyzers and microwave test
receivers, are specified by 3A002.a.6, 3A002.a.7, 3A002.c, 3A002.d,
3A002.e and 3A002.f, respectively.

    Technical Note:  For multiple-channel ``electronic assemblies''
or modules, control status is determined by the highest single-
channel specified performance.

    Note:  3A002.h includes ADC cards, waveform digitizers, data
acquisition cards, signal acquisition boards and transient
recorders.

0
19. In Supplement No. 1, Category 3, ECCN 3A991 is revised to read as
follows:

3A991 Electronic Devices, and ``Components'' not Controlled by
3A001.

License Requirements

Reason for Control: AT

                                              Country chart  (see Supp.
                Control(s)                       No. 1 to part 738)

AT applies to entire entry................  AT Column 1

    License Requirements Note: See Sec.  744.17 of the EAR for
additional license requirements for microprocessors having a
processing speed of 5 GFLOPS or more and an arithmetic logic unit
with an access width of 32 bit or more, including those
incorporating ``information security'' functionality, and associated
``software'' and ``technology'' for the ``production'' or
``development'' of such microprocessors.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: N/A
GBS: N/A

List of Items Controlled

Related Controls: N/A
Related Definitions: N/A
Items:

    a. ``Microprocessor microcircuits'', ``microcomputer
microcircuits'', and microcontroller microcircuits having any of the
following:
    a.1. A performance speed of 5 GFLOPS or more and an arithmetic
logic unit with an access width of 32 bit or more;
    a.2. A clock frequency rate exceeding 25 MHz; or
    a.3. More than one data or instruction bus or serial
communication port that provides a direct external interconnection
between parallel ``microprocessor microcircuits'' with a transfer
rate of 2.5 Mbyte/s;
    b. Storage integrated circuits, as follows:
    b.1. Electrical erasable programmable read-only memories
(EEPROMs) with a storage capacity;
    b.1.a. Exceeding 16 Mbits per package for flash memory types; or
    b.1.b. Exceeding either of the following limits for all other
EEPROM types:
    b.1.b.1. Exceeding 1 Mbit per package; or
    b.1.b.2. Exceeding 256 kbit per package and a maximum access
time of less than 80 ns;
    b.2. Static random access memories (SRAMs) with a storage
capacity:
    b.2.a. Exceeding 1 Mbit per package; or
    b.2.b. Exceeding 256 kbit per package and a maximum access time
of less than 25 ns;
    c. Analog-to-digital converters having any of the following:
    c.1. A resolution of 8 bit or more, but less than 12 bit, with
an output rate greater than 200 million words per second;
    c.2. A resolution of 12 bit with an output rate greater than 105
million words per second;
    c.3. A resolution of more than 12 bit but equal to or less than
14 bit with an output rate greater than 10 million words per second;
or
    c.4. A resolution of more than 14 bit with an output rate
greater than 2.5 million words per second;
    d. Field programmable logic devices having a maximum number of
single-ended digital input/outputs between 200 and 700;
    e. Fast Fourier Transform (FFT) processors having a rated
execution time for a 1,024 point complex FFT of less than 1 ms;
    f. Custom integrated circuits for which either the function is
unknown, or the control status of the equipment in which the
integrated circuits will be used is unknown to the manufacturer,
having any of the following:
    f.1. More than 144 terminals; or
    f.2. A typical ``basic propagation delay time'' of less than 0.4
ns;
    g. Traveling-wave ``vacuum electronic devices,'' pulsed or
continuous wave, as follows:
    g.1. Coupled cavity devices, or derivatives thereof;
    g.2. Helix devices based on helix, folded waveguide, or
serpentine waveguide circuits, or derivatives thereof, with any of
the following:
    g.2.a. An ``instantaneous bandwidth'' of half an octave or more;
and
    g.2.b. The product of the rated average output power (expressed
in kW) and the maximum operating frequency (expressed in GHz) of
more than 0.2;
    g.2.c. An ``instantaneous bandwidth'' of less than half an
octave; and
    g.2.d. The product of the rated average output power (expressed
in kW) and the maximum operating frequency (expressed in GHz) of
more than 0.4;
    h. Flexible waveguides designed for use at frequencies exceeding
40 GHz;
    i. Surface acoustic wave and surface skimming (shallow bulk)
acoustic wave devices (i.e., ``signal processing'' devices employing
elastic waves in materials), having either of the following:
    i.1. A carrier frequency exceeding 1 GHz; or
    i.2. A carrier frequency of 1 GHz or less; and
    i.2.a. A frequency side-lobe rejection exceeding 55 Db;
    i.2.b. A product of the maximum delay time and bandwidth (time
in microseconds and bandwidth in MHz) of more than 100; or
    i.2.c. A dispersive delay of more than 10 microseconds;
    j. Cells as follows:
    j.1. Primary cells having an energy density of 550 Wh/kg or less
at 293 K (20 [deg]C);
    j.2. Secondary cells having an energy density of 300 Wh/kg or
less at 293 K (20 [deg]C);

    Note: 3A991.j. does not control batteries, including single cell
batteries.

    Technical Notes:

    1. For the purpose of 3A991.j energy density (Wh/kg) is
calculated from the nominal voltage multiplied by the nominal
capacity in ampere-hours divided by the mass in kilograms. If the
nominal capacity is not stated, energy density is calculated from
the nominal voltage squared then multiplied by the discharge
duration in hours divided by the discharge load in Ohms and the mass
in kilograms.
    2. For the purpose of 3A991.j, a `cell' is defined as an
electrochemical device, which has positive and negative electrodes,
and electrolyte, and is a source of electrical energy. It is the
basic building block of a battery.
    3. For the purpose of 3A991.j.1, a `primary cell' is a `cell'
that is not designed to be charged by any other source.
    4. For the purpose of 3A991.j.2., a `secondary cell' is a `cell'
that is designed to be charged by an external electrical source.
    k. ``Superconductive'' electromagnets or solenoids ``specially
designed'' to be fully charged or discharged in less than one
minute, having all of the following:

    Note: 3A991.k does not control ``superconductive''
electromagnets or solenoids designed for Magnetic Resonance Imaging
(MRI) medical equipment.

    k.1. Maximum energy delivered during the discharge divided by
the duration of the discharge of more than 500 kJ per minute;
    k.2. Inner diameter of the current carrying windings of more
than 250 mm; and
    k.3. Rated for a magnetic induction of more than 8T or ``overall
current density'' in the winding of more than 300 A/mm\2\;
    l. Circuits or systems for electromagnetic energy storage,
containing ``components'' manufactured from ``superconductive''
materials ``specially designed'' for operation at temperatures below
the ``critical temperature'' of at least one of their
``superconductive'' constituents, having all of the following:
    l.1. Resonant operating frequencies exceeding 1 MHz;
    l.2. A stored energy density of 1 MJ/M\3\ or more; and
    l.3. A discharge time of less than 1 ms;
    m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal
construction and rate for a peak current of 500 A or more;
    n. Digital integrated circuits based on any compound
semiconductor having an equivalent gate count of more than 300 (2
input gates);
    o. Solar cells, cell-interconnect-coverglass (CIC) assemblies,
solar panels, and solar arrays, which are ``space qualified'' and
not controlled by 3A001.e.4.

0
20. In Supplement No. 1 to part 774, Category 3, ECCN 3B001 is revised
to read as follows:

3B001 Equipment for the Manufacturing of Semiconductor Devices or
Materials, as Follows (See List of Items Controlled) and ``Specially
Designed'' ``Components'' and ``Accessories'' Therefor.

License Requirements

Reason for Control: NS, AT

                                              Country chart  (see Supp.
                Control(s)                       No. 1  to part 738)

NS applies to entire entry................  NS Column 2
AT applies to entire entry................  AT Column 1

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: $500
GBS: Yes, except a.3 (molecular beam epitaxial growth equipment
using gas sources), .e (automatic loading multi-chamber central
wafer handling systems only if connected to equipment controlled by
3B001. a.3, or .f), and .f (lithography equipment).

List of Items Controlled

Related Controls: See also 3B991
Related Definitions: N/A
Items:

    a. Equipment designed for epitaxial growth as follows:
    a.1. Equipment designed or modified to produce a layer of any
material other than silicon with a thickness uniform to less than
 2.5% across a distance of 75 mm or more;

    Note: 3B001.a.1 includes atomic layer epitaxy (ALE) equipment.

    a.2. Metal Organic Chemical Vapor Deposition (MOCVD) reactors
designed for compound semiconductor epitaxial growth of material
having two or more of the following elements: Aluminum, gallium,
indium, arsenic, phosphorus, antimony, or nitrogen;
    a.3. Molecular beam epitaxial growth equipment using gas or
solid sources;
    b. Equipment designed for ion implantation and having any of the
following:
    b.1. [Reserved]
    b.2. Being designed and optimized to operate at a beam energy of
20 keV or more and a beam current of 10 mA or more for hydrogen,
deuterium, or helium implant;
    b.3. Direct write capability;
    b.4. A beam energy of 65 keV or more and a beam current of 45 mA
or more for high energy oxygen implant into a heated semiconductor
material ``substrate''; or
    b.5. Being designed and optimized to operate at beam energy of
20 keV or more and a beam current of 10mA or more for silicon
implant into a semiconductor material ``substrate'' heated to 600
[deg]C or greater;
    c. [Reserved]
    d. [Reserved]
    e. Automatic loading multi-chamber central wafer handling
systems having all of the following:
    e.1. Interfaces for wafer input and output, to which more than
two functionally different `semiconductor process tools' controlled
by 3B001.a.1, 3B001.a.2, 3B001.a.3 or 3B001.b are designed to be
connected; and
    e.2. Designed to form an integrated system in a vacuum
environment for `sequential multiple wafer processing';

    Note: 3B001.e does not control automatic robotic wafer handling
systems ``specially designed'' for parallel wafer processing.

    Technical Notes:

    1. For the purpose of 3B001.e, `semiconductor process tools'
refers to modular tools that provide physical processes for
semiconductor production that are functionally different, such as
deposition, implant or thermal processing.
    2. For the purpose of 3B001.e, `sequential multiple wafer
processing' means the capability to process each wafer in different
`semiconductor process tools', such as by transferring each wafer
from one tool to a second tool and on to a third tool with the
automatic loading multi-chamber central wafer handling systems.
    f. Lithography equipment as follows:
    f.1. Align and expose step and repeat (direct step on wafer) or
step and scan (scanner) equipment for wafer processing using photo-
optical or X-ray methods and having any of the following:
    f.1.a. A light source wavelength shorter than 193 nm; or
    f.1.b. Capable of producing a pattern with a ``Minimum
Resolvable Feature size'' (MRF) of 45 nm or less;

    Technical Note: The `Minimum Resolvable Feature size' (MRF) is
calculated by the following formula:

MRF = (an exposure light source wavelength in nm) x (K factor)
numerical aperture

where the K factor = 0.35

    f.2. Imprint lithography equipment capable of production features
of 45 nm or less;

    Note: 3B001.f.2 includes:
    --Micro contact printing tools;
    --Hot embossing tools;
    --Nano-imprint lithography tools;
    --Step and flash imprint lithography (S-FIL) tools.

    f.3. Equipment ``specially designed'' for mask making having all
of the following:
    f.3.a. A deflected focused electron beam, ion beam or ``laser''
beam; and
    f.3.b. Having any of the following:
    f.3.b.1. A Full-Width Half-Maximum (FWHM) spot size smaller than
65 nm and an image placement less than 17 nm (mean + 3 sigma); or
    f.3.b.2. [Reserved]
    f.3.b.3. A second-layer overlay error of less than 23 nm (mean +
3 sigma) on the mask;
    f.4. Equipment designed for device processing using direct
writing methods, having all of the following:
    f.4.a. A deflected focused electron beam; and
    f.4.b. Having any of the following:
    f.4.b.1. A minimum beam size equal to or smaller than 15 nm; or
    f.4.b.2. An overlay error less than 27 nm (mean + 3 sigma);
    g. Masks and reticles, designed for integrated circuits
controlled by 3A001;
    h. Multi-layer masks with a phase shift layer not specified by
3B001.g and designed to be used by lithography equipment having a
light source wavelength less than 245 nm;

    Note: 3B001.h. does not control multi-layer masks with a phase
shift layer designed for the fabrication of memory devices not
controlled by 3A001.

    i. Imprint lithography templates designed for integrated
circuits by 3A001;
    j. Mask ``substrate blanks'' with multilayer reflector structure
consisting of molybdenum and silicon, and having all of the
following:
    j.1. ``Specially designed'' for `Extreme Ultraviolet (EUV)'
lithography; and
    j.2. Compliant with SEMI Standard P37.

    Technical Note: `Extreme Ultraviolet (EUV)' refers to
electromagnetic spectrum wavelengths greater than 5 nm and less than
124 nm.

0
21. In Supplement No. 1, Category 3, ECCN 3E003 is revised to read as
follows:

3E003 Other ``Technology'' for the ``Development'' or ``Production''
of the Following (See List of Items Controlled).

License Requirements

Reason for Control: NS, AT

                                              Country chart  (see Supp.
                Control(s)                       No. 1  to part 738)

NS applies to entire entry................  NS Column 1
AT applies to entire entry................  AT Column 1

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

TSR: Yes, except .f and .g

List of Items Controlled

Related Controls: See 3E001 for silicon-on-insulation (SOI)
technology for the ``development'' or ``production'' related to
radiation hardening of integrated circuits.
Related Definitions: N/A
Items:

    a. Vacuum microelectronic devices;
    b. Hetero-structure semiconductor electronic devices such as
high electron mobility transistors (HEMT), hetero-bipolar
transistors (HBT), quantum well and super lattice devices;

    Note: 3E003.b does not control ``technology'' for high electron
mobility transistors (HEMT) operating at frequencies lower than 31.8
GHz and hetero-junction bipolar transistors (HBT) operating at
frequencies lower than 31.8 GHz.

    c. ``Superconductive'' electronic devices;
    d. Substrates of films of diamond for electronic components;
    e. Substrates of silicon-on-insulator (SOI) for integrated
circuits in which the insulator is silicon dioxide;
    f. Substrates of silicon carbide for electronic components;
    g. ``Vacuum electronic devices'' operating at frequencies of
31.8 GHz or higher.

0
22. In Supplement No. 1 to part 774, Category 5, ECCN 5E001 is revised
to read as follows:

5E001 ``Technology'' as Follows (See List of Items Controlled).

License Requirements

Reason for Control: NS, SL, AT

                                              Country chart  (see Supp.
                Control(s)                       No. 1  to part 738)

NS applies to entire entry................  NS Column 1
SL applies to ``technology'' for the        ............................
 ``development'' or ``production'' of
 equipment, functions or features
 controlled by 5A001.f.1, or for the
 ``development'' or ``production'' of
 ``software'' controlled by ECCN 5D001.a
 (for 5A001.f.1).
AT applies to entire entry................  AT Column 1

Reporting Requirements

    See Sec.  743.1 of the EAR for reporting requirements for
exports under License Exceptions, and Validated End-User
authorizations.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

TSR: Yes, except for exports or reexports to destinations outside of
those countries listed in Country Group A:5 (See Supplement No. 1 to
part 740 of the EAR) of ``technology'' controlled by 5E001.a for the
``development'' or ``production'' of the following:

    (1) Items controlled by 5A001.b.5 or 5A001.h; or
    (2)``Software'' controlled by 5D001.a that is ``specially
designed'' for the ``development'' or ``production'' of equipment,
functions or features controlled by 5A001.b.5 or 5A001.h.

Special Conditions for STA

STA: License Exception STA may not be used to ship or transmit
``technology'' according to the General Technology Note for the
``development'' or ``production'' of equipment, functions or
features specified by 5A001.b.3, b.5 or .h; or for ``software'' in
5D001.a that is specified in the STA paragraph in the License
Exception section of ECCN 5D001 to any of the destinations listed in
Country Group A:6 (See Supplement No. 1 to part 740 of the EAR).

List of Items Controlled

Related Controls: (1) See also 5E101, 5E980 and 5E991. (2)
``Technology'' for ``development'' or ``production'' of ``Monolithic
Microwave Integrated Circuit'' (``MMIC'') amplifiers that meet the
control criteria given at 3A001.b.2 is controlled in 3E001; 5E001.d
refers only to that additional ``technology'' ``required'' for
telecommunications.

Related Definitions: N/A
Items:

    a. ``Technology'' according to the General Technology Note for
the ``development'', ``production'' or ``use'' (excluding operation)
of equipment, functions or features, controlled by 5A001 or
``software'' controlled by 5D001.a.
    b. Specific ``technology'', as follows:
    b.1. ``Technology'' ``required'' for the ``development'' or
``production'' of telecommunications equipment ``specially
designed'' to be used on board satellites;
    b.2. ``Technology'' for the ``development'' or ``use'' of
``laser'' communication techniques with the capability of
automatically acquiring and tracking signals and maintaining
communications through exoatmosphere or sub-surface (water) media;
    b.3. ``Technology'' for the ``development'' of digital cellular
radio base station receiving equipment whose reception capabilities
that allow multi-band, multi-channel, multi-mode, multi-coding
algorithm or multi-protocol operation can be modified by changes in
``software'';
    b.4. ``Technology'' for the ``development'' of ``spread
spectrum'' techniques, including ``frequency hopping'' techniques.

    Note: 5E001.b.4 does not apply to ``technology'' for the
``development'' of any of the following:

    a. Civil cellular radio-communications systems; or
    b. Fixed or mobile satellite Earth stations for commercial civil
telecommunications.
    c. ``Technology'' according the General Technology Note for the
``development'' or ``production'' of any of the following:
    c.1. [Reserved]
    c.2. Equipment employing a ``laser'' and having any of the
following:
    c.2.a. A transmission wavelength exceeding 1,750 nm;
    c.2.b. [Reserved]
    c.2.c. [Reserved]
    c.2.d. Employing wavelength division multiplexing techniques of
optical carriers at less than 100 GHz spacing; or
    c.2.e. Employing analog techniques and having a bandwidth
exceeding 2.5 GHz;

    Note: 5E001.c.2.e does not control ``technology'' for commercial
TV systems.

    N.B.: For ``technology'' for the ``development'' or
``production'' of non-telecommunications equipment employing a
``laser'', see Product Group E of Category 6, e.g., 6E00x.
    c.3. Equipment employing ``optical switching'' and having a
switching time less than 1 ms; or
    c.4. Radio equipment having any of the following:
    c.4.a. Quadrature-Amplitude-Modulation (QAM) techniques above
level 1,024; or
    c.4.b. Operating at input or output frequencies exceeding 31.8
GHz; or

    Note: 5E001.c.4.b does not control ``technology'' for equipment
designed or modified for operation in any frequency band which is
``allocated by the ITU'' for radio-communications services, but not
for radio-determination.

    c.4.c. Operating in the 1.5 MHz to 87.5 MHz band and
incorporating adaptive techniques providing more than 15 dB
suppression of an interfering signal; or
    c.5. [Reserved]
    c.6. Mobile equipment having all of the following:
    c.6.a. Operating at an optical wavelength greater than or equal
to 200nm and less than or equal to 400nm; and

    c.6.b. Operating as a ``local area network'';
    d. ``Technology'' according to the General Technology Note for
the ``development'' or ``production'' of ``Monolithic Microwave
Integrated Circuit'' (``MMIC'') amplifiers ``specially designed''
for telecommunications and that are any of the following:

    Technical Note: For purposes of 5E001.d, the parameter peak
saturated power output may also be referred to on product data
sheets as output power, saturated power output, maximum power
output, peak power output, or peak envelope power output.

    d.1. Rated for operation at frequencies exceeding 2.7 GHz up to
and including 6.8 GHz with a ``fractional bandwidth'' greater than
15%, and having any of the following:
    d.1.a. A peak saturated power output greater than 75 W (48.75
dBm) at any frequency exceeding 2.7 GHz up to and including 2.9 GHz;
    d.1.b. A peak saturated power output greater than 55 W (47.4
dBm) at any frequency exceeding 2.9 GHz up to and including 3.2 GHz;
    d.1.c. A peak saturated power output greater than 40 W (46 dBm)
at any frequency exceeding 3.2 GHz up to and including 3.7 GHz; or
    d.1.d. A peak saturated power output greater than 20 W (43 dBm)
at any frequency exceeding 3.7 GHz up to and including 6.8 GHz;
    d.2. Rated for operation at frequencies exceeding 6.8 GHz up to
and including 16 GHz with a ``fractional bandwidth'' greater than
10%, and having any of the following:
    d.2.a. A peak saturated power output greater than 10W (40 dBm)
at any frequency exceeding 6.8 GHz up to and including 8.5 GHz; or
    d.2.b. A peak saturated power output greater than 5W (37 dBm) at
any frequency exceeding 8.5 GHz up to and including 16 GHz;
    d.3. Rated for operation with a peak saturated power output
greater than 3 W (34.77 dBm) at any frequency exceeding 16 GHz up to
and including 31.8 GHz, and with a ``fractional bandwidth'' of
greater than 10%;
    d.4. Rated for operation with a peak saturated power output
greater than 0.1 nW (-70 dBm) at any frequency exceeding 31.8 GHz up
to and including 37 GHz;
    d.5. Rated for operation with a peak saturated power output
greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to
and including 43.5 GHz, and with a ``fractional bandwidth'' of
greater than 10%;
    d.6. Rated for operation with a peak saturated power output
greater than 31.62 mW (15 dBm) at any frequency exceeding 43.5 GHz
up to and including 75 GHz, and with a ``fractional bandwidth'' of
greater than 10%;
    d.7. Rated for operation with a peak saturated power output
greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to
and including 90 GHz, and with a ``fractional bandwidth'' of greater
than 5%; or
    d.8. Rated for operation with a peak saturated power output
greater than 0.1 nW (-70 dBm) at any frequency exceeding 90 GHz;
    e. ``Technology'' according to the General Technology Note for
the ``development'' or ``production'' of electronic devices and
circuits, ``specially designed'' for telecommunications and
containing ``components'' manufactured from ``superconductive''
materials, ``specially designed'' for operation at temperatures
below the ``critical temperature'' of at least one of the
``superconductive'' constituents and having any of the following:
    e.1. Current switching for digital circuits using
``superconductive'' gates with a product of delay time per gate (in
seconds) and power dissipation per gate (in watts) of less than
10-14 J; or
    e.2. Frequency selection at all frequencies using resonant
circuits with Q-values exceeding 10,000.

Category 5--Part 2--``Information Security''

0
23. In Supplement No. 1 to part 774, Category 5, ECCN 5A002 is revised
to read as follows:

5A002 ``Information Security'' Systems, Equipment and
``Components,'' as Follows (See List of Items Controlled).

License Requirements

Reason for Control: NS, AT, EI

                                            Country chart (see Supp. No.
                Control(s)                         1 to part 738)

NS applies to entire entry................  NS Column 1
AT applies to entire entry................  AT Column 1
EI applies to entire entry................  Refer to Sec.   742.15 of
                                             the EAR

    License Requirements Note: See Sec.  744.17 of the EAR for
additional license requirements for microprocessors having a
processing speed of 5 GFLOPS or more and an arithmetic logic unit
with an access width of 32 bit or more, including those
incorporating ``information security'' functionality, and associated
``software'' and ``technology'' for the ``production'' or
``development'' of such microprocessors.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: Yes: $500 for ``components''.
N/A for systems and equipment.
GBS: N/A
ENC: Yes for certain EI controlled commodities, see Sec.  740.17 of
the EAR for eligibility.

List of Items Controlled

Related Controls: (1) ECCN 5A002.a controls ``component'' providing
the means or functions necessary for ``information security.'' All
such ``components'' are presumptively ``specially designed'' and
controlled by 5A002.a. (2) See USML Categories XI (including XI(b))
and XIII(b) (including XIII(b)(2)) for controls on systems,
equipment, and components described in 5A002.d or .e that are
subject to the ITAR. (3) For ``satellite navigation system''
receiving equipment containing or employing decryption see 7A005,
and for related decryption ``software'' and ``technology'' see 7D005
and 7E001. (4) Noting that items may be controlled elsewhere on the
CCL, examples of items not controlled by ECCN 5A002.a.4 include the
following: (a) An automobile where the only `cryptography for data
confidentiality' `in excess of 56 bits of symmetric key length, or
equivalent' is performed by a Category 5--Part 2 Note 3 eligible
mobile telephone that is built into the car. In this case, secure
phone communications support a non-primary function of the
automobile but the mobile telephone (equipment), as a standalone
item, is not controlled by ECCN 5A002 because it is excluded by the
Cryptography Note (Note 3) (See ECCN 5A992.c). (b) An exercise bike
with an embedded Category 5--Part 2 Note 3 eligible web browser,
where the only controlled cryptography is performed by the web
browser. In this case, secure web browsing supports a non-primary
function of the exercise bike but the web browser (``software''), as
a standalone item, is not controlled by ECCN 5D002 because it is
excluded by the Cryptography Note (Note 3) (See ECCN 5D992.c). (5)
After classification or self-classification in accordance with Sec.
740.17(b) of the EAR, mass market encryption commodities that meet
eligibility requirements are released from ``EI'' and ``NS''
controls. These commodities are designated 5A992.c.

Related Definitions: N/A
Items:
    a. Designed or modified to use `cryptography for data
confidentiality' having a `described security algorithm', where that
cryptographic capability is usable without ``cryptographic
activation'' or has been activated, as follows:
    a.1. Items having ``information security'' as a primary
function;
    a.2. Digital communication or networking systems, equipment or
components, not specified in paragraph 5A002.a.1;
    a.3. Computers, other items having information storage or
processing as a primary function, and components therefor, not
specified in paragraphs 5A002.a.1 or .a.2;
    N.B.: For operating systems see also 5D002.a.1 and .c.1.
    a.4. Items, not specified in paragraphs 5A002.a.1 to a.3, where
the `cryptography for data confidentiality' having `in excess of a
`described security algorithm' meets all of the following:
    a.4.a. It supports a non-primary function of the item; and
    a.4.b. It is performed by incorporated equipment or ``software''
that would, as a standalone item, be specified by ECCNs 5A002,
5A003, 5A004, 5B002 or 5D002.
    N.B. to paragraph a.4: See Related Control Paragraph (4) of this
ECCN 5A002 for examples of items not controlled by 5A002.a.4.

    Technical Notes:

    1. For the purposes of 5A002.a, `cryptography for data
confidentiality' means ``cryptography'' that employs digital
techniques and performs any cryptographic function other than any of
the following:
    1.a. ``Authentication;''
    1.b. Digital signature;
    1.c. Data integrity;
    1.d. Non-repudiation;

    1.e. Digital rights management, including the execution of copy-
protected ``software;''
    1.f. Encryption or decryption in support of entertainment, mass
commercial broadcasts or medical records management; or
    1.g. Key management in support of any function described in
paragraphs 1.a to 1.f of this Technical Note paragraph 1.
    2. For the purposes of 5A002.a, `described security algorithm'
means any of the following:
    2.a. A ``symmetric algorithm'' employing a key length in excess
of 56 bits, not including parity bits; or
    2.b. An ``asymmetric algorithm'' where the security of the
algorithm is based on any of the following:
    2.b.1. Factorization of integers in excess of 512 bits (e.g.,
RSA);
    2.b.2. Computation of discrete logarithms in a multiplicative
group of a finite field of size greater than 512 bits (e.g., Diffie-
Hellman over Z/pZ); or
    2.b.3. Discrete logarithms in a group other than mentioned in
paragraph 2.b.2 of this Technical Note in excess of 112 bits (e.g.,
Diffie-Hellman over an elliptic curve).
    2.c. An ``asymmetric algorithm'' where the security of the
algorithm is based on any of the following:
    2.c.1. Shortest vector or closest vector problems associated
with lattices (e.g., NewHope, Frodo, NTRUEncrypt, Kyber, Titanium);
    2.c.2. Finding isogenies between Supersingular elliptic curves
(e.g., Supersingular Isogeny Key Encapsulation); or
    2.c.3. Decoding random codes (e.g., McEliece, Niederreiter).

    Technical Note: An algorithm described by Technical Note 2.c.
may be referred to as being post-quantum, quantum-safe or quantum-
resistant.

    Note 1: Details of items must be accessible and provided upon
request, in order to establish any of the following:

    a. Whether the item meets the criteria of 5A002.a.1 to a.4; or
    b. Whether the cryptographic capability for data confidentiality
specified by 5A002.a is usable without ``cryptographic activation.''

    Note 2: 5A002.a does not control any of the following items, or
specially designed ``information security'' components therefor:

    a. Smart cards and smart card `readers/writers' as follows:
    a.1. A smart card or an electronically readable personal
document (e.g., token coin, e-passport) that meets any of the
following:
    a.1.a. The cryptographic capability meets all of the following:
    a.1.a.1. It is restricted for use in any of the following:
    a.1.a.1.a. Equipment or systems, not described by 5A002.a.1 to
a.4;
    a.1.a.1.b. Equipment or systems, not using `cryptography for
data confidentiality' having a `described security algorithm'; or
    a.1.a.1.c. Equipment or systems, excluded from 5A002.a by
entries b. to f. of this Note; and
    a.1.a.2. It cannot be reprogrammed for any other use; or
    a.1.b. Having all of the following:
    a.1.b.1. It is specially designed and limited to allow
protection of `personal data' stored within;
    a.1.b.2. Has been, or can only be, personalized for public or
commercial transactions or individual identification; and
    a.1.b.3. Where the cryptographic capability is not user-
accessible;

    Technical Note to paragraph a.1.b of Note 2: `Personal data'
includes any data specific to a particular person or entity, such as
the amount of money stored and data necessary for
``authentication.''

    a.2. `Readers/writers' specially designed or modified, and
limited, for items specified by paragraph a.1 of this Note;

    Technical Note to paragraph a.2 of Note 2: `Readers/writers'
include equipment that communicates with smart cards or
electronically readable documents through a network.

    b. Cryptographic equipment specially designed and limited for
banking use or `money transactions';

    Technical Note to paragraph b. of Note 2: `Money transactions'
in 5A002 Note 2 paragraph b. includes the collection and settlement
of fares or credit functions.

    c. Portable or mobile radiotelephones for civil use (e.g., for
use with commercial civil cellular radio communication systems) that
are not capable of transmitting encrypted data directly to another
radiotelephone or equipment (other than Radio Access Network (RAN)
equipment), nor of passing encrypted data through RAN equipment
(e.g., Radio Network Controller (RNC) or Base Station Controller
(BSC));
    d. Cordless telephone equipment not capable of end-to-end
encryption where the maximum effective range of unboosted cordless
operation (i.e., a single, unrelayed hop between terminal and home
base station) is less than 400 meters according to the
manufacturer's specifications;
    e. Portable or mobile radiotelephones and similar client
wireless devices for civil use, that implement only published or
commercial cryptographic standards (except for anti-piracy
functions, which may be non-published) and also meet the provisions
of paragraphs a.2 to a.4 of the Cryptography Note (Note 3 in
Category 5--Part 2), that have been customized for a specific civil
industry application with features that do not affect the
cryptographic functionality of these original non-customized
devices;
    f. Items, where the ``information security'' functionality is
limited to wireless ``personal area network'' functionality, meeting
all of the following:
    f.1. Implement only published or commercial cryptographic
standards; and
    f.2. The cryptographic capability is limited to a nominal
operating range not exceeding 30 meters according to the
manufacturer's specifications, or not exceeding 100 meters according
to the manufacturer's specifications for equipment that cannot
interconnect with more than seven devices;
    g. Mobile telecommunications Radio Access Network (RAN)
equipment designed for civil use, which also meet the provisions of
paragraphs a.2 to a.4 of the Cryptography Note (Note 3 in Category
5--Part 2), having an RF output power limited to 0.1W (20 dBm) or
less, and supporting 16 or fewer concurrent users;
    h. Routers, switches or relays, where the ``information
security'' functionality is limited to the tasks of ``Operations,
Administration or Maintenance'' (``OAM'') implementing only
published or commercial cryptographic standards;
    i. General purpose computing equipment or servers, where the
``information security'' functionality meets all of the following:
    i.1. Uses only published or commercial cryptographic standards;
and
    i.2. Is any of the following:
    i.2.a. Integral to a CPU that meets the provisions of Note 3 in
Category 5-Part 2;
    i.2.b. Integral to an operating system that is not specified by
5D002; or
    i.2.c. Limited to ``OAM'' of the equipment; or
    j. Items specially designed for a `connected civil industry
application', meeting all of the following:
    j.1. Being any of the following:
    j.1.a. A network-capable endpoint device meeting any of the
following:
    j.1.a.1. The ``information security'' functionality is limited
to securing `non-arbitrary data' or the tasks of ``Operations,
Administration or Maintenance'' (``OAM''); or
    j.1.a.2. The device is limited to a specific `connected civil
industry application'; or
    j.1.b. Networking equipment meeting all of the following:
    j.1.b.1. Being specially designed to communicate with the
devices specified by paragraph j.1.a. above; and
    j.1.b.2. The ``information security'' functionality is limited
to supporting the `connected civil industry application' of devices
specified by paragraph j.1.a. above, or the tasks of ``OAM'' of this
networking equipment or of other items specified by paragraph j. of
this Note; and
    j.2. Where the ``information security'' functionality implements
only published or commercial cryptographic standards, and the
cryptographic functionality cannot easily be changed by the user.

    Technical Notes:

    1. `Connected civil industry application' means a network-
connected consumer or civil industry application other than
``information security'', digital communication, general purpose
networking or computing.
    2. `Non-arbitrary data' means sensor or metering data directly
related to the stability, performance or physical measurement of a
system (e.g., temperature, pressure, flow rate, mass, volume,
voltage, physical location, etc.), that cannot be changed by the
user of the device.
    b. Being a `cryptographic activation token';

    Technical Note: A `cryptographic activation token' is an item
designed or modified for any of the following:

    1. Converting, by means of ``cryptographic activation'', an item
not specified by Category 5--Part 2 into an item specified by
5A002.a or 5D002.c.1, and not released by the Cryptography Note
(Note 3 in Category 5--Part 2); or

    2. Enabling, by means of ``cryptographic activation'',
additional functionality specified by 5A002.a of an item already
specified by Category 5--Part 2;
    c. Designed or modified to use or perform ``quantum
cryptography;''

    Technical Note:  ``Quantum cryptography'' is also known as
Quantum Key Distribution (QKD).

    d. Designed or modified to use cryptographic techniques to
generate channelizing codes, scrambling codes or network
identification codes, for systems using ultra-wideband modulation
techniques and having any of the following:
    d.1. A bandwidth exceeding 500 MHz; or
    d.2. A ``fractional bandwidth'' of 20% or more;
    e. Designed or modified to use cryptographic techniques to
generate the spreading code for ``spread spectrum'' systems, not
specified by 5A002.d, including the hopping code for ``frequency
hopping'' systems.

0
24. In Supplement No. 1 to part 774, Category 5, ECCN 5D002 is revised
to read as follows:

5D002 ``Software'' as Follows (see List of Items Controlled).

License Requirements

Reason for Control: NS, AT, EI

                                              Country chart  (see Supp.
                Control(s)                       No. 1  to part 738)

NS applies to entire entry................  NS Column 1
AT applies to entire entry................  AT Column 1
EI applies to ``software'' in 5D002.a.1,    Refer to Sec.   742.15 of
 a.3, .b, c.1 and c.3, for commodities or    the EAR. Note: Encryption
 ``software'' controlled for EI reasons in   software is controlled
 ECCNs 5A002, 5A004 or 5D002.                because of its functional
                                             capacity, and not because
                                             of any informational value
                                             of such software; such
                                             software is not accorded
                                             the same treatment under
                                             the EAR as other
                                             ``software'; and for export
                                             licensing purposes,
                                             encryption software is
                                             treated under the EAR in
                                             the same manner as a
                                             commodity included in ECCN
                                             5A002

    License Requirements Note: See Sec.  744.17 of the EAR for
additional license requirements for microprocessors having a
processing speed of 5 GFLOPS or more and an arithmetic logic unit
with an access width of 32 bit or more, including those
incorporating ``information security'' functionality, and associated
``software'' and ``technology'' for the ``production'' or
``development'' of such microprocessors.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

TSR: N/A
ENC: Yes for certain EI controlled software, see Sec.  740.17 of the
EAR for eligibility.

List of Items Controlled

Related Controls: After classification or self-classification in
accordance with Sec.  740.17(b) of the EAR, mass market encryption
software that meet eligibility requirements are released from ``EI''
and ``NS'' controls. This software is designated as 5D992.c.
Related Definitions: 5D002.a controls ``software'' designed or
modified to use ``cryptography'' employing digital or analog
techniques to ensure ``information security.''
Items:

    a. ``Software'' ``specially designed'' or modified for the
``development,'' ``production'' or ``use'' of any of the following:
    a.1. Equipment specified by 5A002 or ``software'' specified by
5D002.c.1;
    a.2. Equipment specified by 5A003 or ``software'' specified by
5D002.c.2; or
    a.3. Equipment specified by 5A004 or ``software'' specified by
5D002.c.3;
    b. ``Software'' having the characteristics of a `cryptographic
activation token' specified by 5A002.b;
    c. ``Software'' having the characteristics of, or performing or
simulating the functions of, any of the following:
    c.1. Equipment specified by 5A002.a, .c, .d or .e;

    Note: 5D002.c.1 does not apply to ``software'' limited to the
tasks of ``OAM'' implementing only published or commercial
cryptographic standards.

    c.2. Equipment specified by 5A003; or
    c.3. Equipment specified by 5A004.
    d. [Reserved]
    N.B.: See 5D002.b for items formerly specified in 5D002.d.

0
25. In Supplement No. 1 to part 774, Category 5, ECCN 5E002 is revised
to read as follows:

5E002 ``Technology'' as Follows (See List of Items Controlled).

License Requirements

Reason for Control: NS, AT, EI

                                            Country chart (see Supp. No.
                Control(s)                         1 to part 738)

NS applies to entire entry................  NS Column 1
AT applies to entire entry................  AT Column 1
EI applies to ``technology'' in 5E002.a     Refer to Sec.   742.15 of
 for commodities or ``software''             the EAR
 controlled for EI reasons in ECCNs 5A002,
 5A004 or 5D002, and to ``technology'' in
 5E002.b..

    License Requirements Notes:

    (1) See Sec.  744.17 of the EAR for additional license
requirements for microprocessors having a processing speed of 5
GFLOPS or more and an arithmetic logic unit with an access width of
32 bit or more, including those incorporating ``information
security'' functionality, and associated ``software'' and
``technology'' for the ``production'' or ``development'' of such
microprocessors.
    (2) When a person performs or provides technical assistance that
incorporates, or otherwise draws upon, ``technology'' that was
either obtained in the United States or is of US-origin, then a
release of the ``technology'' takes place. Such technical
assistance, when rendered with the intent to aid in the
``development'' or ``production'' of encryption commodities or
software that would be controlled for ``EI'' reasons under ECCN
5A002, 5A004 or 5D002, may require authorization under the EAR even
if the underlying encryption algorithm to be implemented is from the
public domain or is not of U.S.-origin.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

TSR: N/A
ENC: Yes for certain EI controlled technology, see Sec.  740.17 of
the EAR for eligibility.

List of Items Controlled

Related Controls: See also 5E992. This entry does not control
``technology'' ``required'' for the ``use'' of equipment excluded
from control under the Related Controls paragraph or the Technical
Notes in ECCN 5A002 or ``technology'' related to equipment excluded
from control under ECCN 5A002.

Related Definitions: N/A
Items:

    a. ``Technology'' according to the General Technology Note for
the ``development,'' ``production'' or ``use'' of equipment
controlled by 5A002, 5A003, 5A004 or 5B002, or of ``software''
controlled by 5D002.a or 5D002.c.
    b. ``Technology'' having the characteristics of a `cryptographic
activation token' specified by 5A002.b.

    Note: 5E002 includes ``information security'' technical data
resulting from procedures carried out to evaluate or determine the
implementation of functions, features or techniques specified in
Category 5--Part 2.

0
26. In Supplement No. 1 to part 774, Category 6, ECCN 6A002 is revised
to read as follows:

6A002 Optical Sensors and Equipment, and ``Components'' Therefor, as
Follows (see List of Items Controlled).

License Requirements

Reason for Control: NS, MT, CC, RS, AT, UN

                                              Country chart  (see Supp.
                Control(s)                       No. 1  to part 738)

NS applies to entire entry................  NS Column 2

MT applies to optical detectors in          MT Column 1
 6A002.a.1, or a.3 that are ``specially
 designed'' or modified to protect
 ``missiles'' against nuclear effects
 (e.g., Electromagnetic Pulse (EMP), X-
 rays, combined blast and thermal
 effects), and usable for ``missiles''.
RS applies to 6A002.a.1, a.2, a.3 (except   RS Column 1
 a.3.d.2.a and a.3.e for lead selenide
 based focal plane arrays (FPAs)), .c, and
 .f.
CC applies to police-model infrared         CC Column 1
 viewers in 6A002.c.
AT applies to entire entry................  AT Column 1
UN applies to 6A002.a.1, a.2, a.3 and .c..  See Sec.   746.1(b) for UN
                                             controls

Reporting Requirements

    See Sec.  743.1 of the EAR for reporting requirements for
exports under License Exceptions, and Validated End-User
authorizations.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: $500 for 6A002.f.
    $3,000; except N/A for MT and for 6A002.a.1, a.2, a.3, .c, and
.f.

GBS: N/A

List of Items Controlled

Related Controls: (1) See USML Category XII(e) for infrared focal
plane arrays, image intensifier tubes, and related parts and
components, subject to the ITAR. (2) See USML Category XV(e) for
space-qualified focal plane arrays subject to the ITAR. (3) See also
ECCNs 6A102, 6A202, and 6A992. (4) See ECCN 0A919 for foreign-made
military commodities that incorporate commodities described in
6A002. (5) Section 744.9 imposes a license requirement on
commodities described in ECCN 6A002 if being exported, reexported,
or transferred (in-country) for use by a military end-user or for
incorporation into an item controlled by ECCN 0A919. (6) See USML
Categories XII(e) and XV(e)(3) for read-out integrated circuits
``subject to the ITAR.'' (7) See 6B002 for masks and reticles,
``specially designed'' for optical sensors specified by 6A002.a.1.b
or 6A002.a.1.d.
Related Definitions: N/A
Items:
    a. Optical detectors as follows:
    a.1. ``Space-qualified'' solid-state detectors as follows:

    Note: For the purpose of 6A002.a.1, solid-state detectors
include ``focal plane arrays''.

    a.1.a. ``Space-qualified'' solid-state detectors having all of
the following:
    a.1.a.1. A peak response in the wavelength range exceeding 10 nm
but not exceeding 300 nm; and
    a.1.a.2. A response of less than 0.1% relative to the peak
response at a wavelength exceeding 400 nm;
    a.1.b. ``Space-qualified'' solid-state detectors having all of
the following:
    a.1.b.1. A peak response in the wavelength range exceeding 900
nm but not exceeding 1,200 nm; and
    a.1.b.2. A response ``time constant'' of 95 ns or less;
    a.1.c. ``Space-qualified'' solid-state detectors having a peak
response in the wavelength range exceeding 1,200 nm but not
exceeding 30,000 nm;
    a.1.d. ``Space-qualified'' ``focal plane arrays'' having more
than 2,048 elements per array and having a peak response in the
wavelength range exceeding 300 nm but not exceeding 900 nm;
    a.2. Image intensifier tubes and ``specially designed''
``components'' therefor, as follows:

    Note: 6A002.a.2 does not control non-imaging photomultiplier
tubes having an electron sensing device in the vacuum space limited
solely to any of the following:

    a. A single metal anode; or
    b. Metal anodes with a center to center spacing greater than 500
[mu]m.

    Technical Note: `Charge multiplication' is a form of electronic
image amplification and is defined as the generation of charge
carriers as a result of an impact ionization gain process. `Charge
multiplication' sensors may take the form of an image intensifier
tube, solid state detector or ``focal plane array''.

    a.2.a. Image intensifier tubes having all of the following:
    a.2.a.1. A peak response in the wavelength range exceeding 400
nm but not exceeding 1,050 nm;
    a.2.a.2. Electron image amplification using any of the
following:
    a.2.a.2.a. A microchannel plate with a hole pitch (center-to-
center spacing) of 12 [mu]m or less; or
    a.2.a.2.b. An electron sensing device with a non-binned pixel
pitch of 500 [mu]m or less, ``specially designed'' or modified to
achieve `charge multiplication' other than by a microchannel plate;
and
    a.2.a.3. Any of the following photocathodes:
    a.2.a.3.a. Multialkali photocathodes (e.g., S-20 and S-25)
having a luminous sensitivity exceeding 350 [mu]A/lm;
    a.2.a.3.b. GaAs or GaInAs photocathodes; or
    a.2.a.3.c. Other ``III-V compound'' semiconductor photocathodes
having a maximum ``radiant sensitivity'' exceeding 10 mA/W;
    a.2.b. Image intensifier tubes having all of the following:
    a.2.b.1. A peak response in the wavelength range exceeding 1,050
nm but not exceeding 1,800 nm;
    a.2.b.2. Electron image amplification using any of the
following:
    a.2.b.2.a. A microchannel plate with a hole pitch (center-to-
center spacing) of 12 [mu]m or less; or
    a.2.b.2.b. An electron sensing device with a non-binned pixel
pitch of 500 [mu]m or less, ``specially designed'' or modified to
achieve `charge multiplication' other than by a microchannel plate;
and
    a.2.b.3. ``III/V compound'' semiconductor (e.g., GaAs or GaInAs)
photocathodes and transferred electron photocathodes, having a
maximum ``radiant sensitivity'' exceeding 15 mA/W;
    a.2.c. ``Specially designed'' ``components'' as follows:
    a.2.c.1. Microchannel plates having a hole pitch (center-to-
center spacing) of 12 [mu]m or less;
    a.2.c.2. An electron sensing device with a non-binned pixel
pitch of 500 [mu]m or less, ``specially designed'' or modified to
achieve `charge multiplication' other than by a microchannel plate;
    a.2.c.3. ``III-V compound'' semiconductor (e.g., GaAs or GaInAs)
photocathodes and transferred electron photocathodes;

    Note: 6A002.a.2.c.3 does not control compound semiconductor
photocathodes designed to achieve a maximum ``radiant sensitivity''
of any of the following:

    a. 10 mA/W or less at the peak response in the wavelength range
exceeding 400 nm but not exceeding 1,050 nm; or
    b. 15 mA/W or less at the peak response in the wavelength range
exceeding 1,050 nm but not exceeding 1,800 nm.
    a.3. Non-``space-qualified'' ``focal plane arrays'' as follows:
    N.B.: `Microbolometer' non-``space-qualified'' ``focal plane
arrays'' are only specified by 6A002.a.3.f.

    Technical Note: Linear or two-dimensional multi-element detector
arrays are referred to as ``focal plane arrays'';

    Note 1: 6A002.a.3 includes photoconductive arrays and
photovoltaic arrays.

    Note 2: 6A002.a.3 does not control:

    a. Multi-element (not to exceed 16 elements) encapsulated
photoconductive cells using either lead sulphide or lead selenide;
    b. Pyroelectric detectors using any of the following:
    b.1. Triglycine sulphate and variants;
    b.2. Lead-lanthanum-zirconium titanate and variants;
    b.3. Lithium tantalate;
    b.4. Polyvinylidene fluoride and variants; or
    b.5. Strontium barium niobate and variants.
    c. ``Focal plane arrays'' ``specially designed'' or modified to
achieve `charge multiplication' and limited by design to have a
maximum ``radiant sensitivity'' of 10 mA/W or less for wavelengths
exceeding 760 nm, having all of the following:
    c.1. Incorporating a response limiting mechanism designed not to
be removed or modified; and
    c.2. Any of the following:
    c.2.a. The response limiting mechanism is integral to or
combined with the detector element; or

    c.2.b. The ``focal plane array'' is only operable with the
response limiting mechanism in place.
    d. Thermopile arrays having less than 5,130 elements;

    Technical Note: A response limiting mechanism integral to the
detector element is designed not to be removed or modified without
rendering the detector inoperable.

    a.3.a. Non-``space-qualified'' ``focal plane arrays'' having all
of the following:
    a.3.a.1. Individual elements with a peak response within the
wavelength range exceeding 900 nm but not exceeding 1,050 nm; and
    a.3.a.2. Any of the following:
    a.3.a.2.a. A response ``time constant'' of less than 0.5 ns; or
    a.3.a.2.b. ``Specially designed'' or modified to achieve `charge
multiplication' and having a maximum ``radiant sensitivity''
exceeding 10 mA/W;
    a.3.b. Non-``space-qualified'' ``focal plane arrays'' having all
of the following:
    a.3.b.1. Individual elements with a peak response in the
wavelength range exceeding 1,050 nm but not exceeding 1,200 nm; and
    a.3.b.2. Any of the following:
    a.3.b.2.a. A response ``time constant'' of 95 ns or less; or
    a.3.b.2.b. ``Specially designed'' or modified to achieve `charge
multiplication' and having a maximum ``radiant sensitivity''
exceeding 10 mA/W;
    a.3.c. Non-``space-qualified'' non-linear (2-dimensional)
``focal plane arrays'' having individual elements with a peak
response in the wavelength range exceeding 1,200 nm but not
exceeding 30,000 nm;
    N.B.: Silicon and other material based `microbolometer' non-
``space-qualified'' ``focal plane arrays'' are only specified by
6A002.a.3.f.
    a.3.d. Non-``space-qualified'' linear (1-dimensional) ``focal
plane arrays'' having all of the following:
    a.3.d.1. Individual elements with a peak response in the
wavelength range exceeding 1,200 nm but not exceeding 3,000 nm; and
    a.3.d.2. Any of the following:
    a.3.d.2.a. A ratio of `scan direction' dimension of the detector
element to the `cross-scan direction' dimension of the detector
element of less than 3.8; or
    a.3.d.2.b. Signal processing in the detector elements;

    Note: 6A002.a.3.d does not control ``focal plane arrays'' (not
to exceed 32 elements) having detector elements limited solely to
germanium material.

    Technical Note: For the purposes of 6A002.a.3.d, `cross-scan
direction' is defined as the axis parallel to the linear array of
detector elements and the `scan direction' is defined as the axis
perpendicular to the linear array of detector elements.

    a.3.e. Non-``space-qualified'' linear (1-dimensional) ``focal
plane arrays'' having individual elements with a peak response in
the wavelength range exceeding 3,000 nm but not exceeding 30,000 nm;
    a.3.f. Non-``space-qualified'' non-linear (2-dimensional)
infrared ``focal plane arrays'' based on `microbolometer' material
having individual elements with an unfiltered response in the
wavelength range equal to or exceeding 8,000 nm but not exceeding
14,000 nm;

    Technical Note: For the purposes of 6A002.a.3.f,
`microbolometer' is defined as a thermal imaging detector that, as a
result of a temperature change in the detector caused by the
absorption of infrared radiation, is used to generate any usable
signal.

    a.3.g. Non-``space-qualified'' ``focal plane arrays'' having all
of the following:
    a.3.g.1. Individual detector elements with a peak response in
the wavelength range exceeding 400 nm but not exceeding 900 nm;
    a.3.g.2. ``Specially designed'' or modified to achieve `charge
multiplication' and having a maximum ``radiant sensitivity''
exceeding 10 mA/W for wavelengths exceeding 760 nm; and
    a.3.g.3. Greater than 32 elements;
    b. ``Monospectral imaging sensors'' and ``multispectral imaging
sensors'', designed for remote sensing applications and having any
of the following:
    b.1. An Instantaneous-Field-Of-View (IFOV) of less than 200
[mu]rad (microradians); or
    b.2. Specified for operation in the wavelength range exceeding
400 nm but not exceeding 30,000 nm and having all the following:
    b.2.a. Providing output imaging data in digital format; and
    b.2.b. Having any of the following characteristics:
    b.2.b.1. ``Space-qualified''; or
    b.2.b.2. Designed for airborne operation, using other than
silicon detectors, and having an IFOV of less than 2.5 mrad
(milliradians);

    Note: 6A002.b.1 does not control ``monospectral imaging
sensors'' with a peak response in the wavelength range exceeding 300
nm but not exceeding 900 nm and only incorporating any of the
following non-``space-qualified'' detectors or non-``space-
qualified'' ``focal plane arrays'':

    a. Charge Coupled Devices (CCD) not designed or modified to
achieve `charge multiplication'; or
    b. Complementary Metal Oxide Semiconductor (CMOS) devices not
designed or modified to achieve `charge multiplication'.
    c. `Direct view' imaging equipment incorporating any of the
following:
    c.1. Image intensifier tubes having the characteristics listed
in 6A002.a.2.a or 6A002.a.2.b;
    c.2. ``Focal plane arrays'' having the characteristics listed in
6A002.a.3; or
    c.3. Solid state detectors specified by 6A002.a.1;

    Technical Note: `Direct view' refers to imaging equipment that
presents a visual image to a human observer without converting the
image into an electronic signal for television display, and that
cannot record or store the image photographically, electronically or
by any other means.

    Note: 6A002.c does not control equipment as follows, when
incorporating other than GaAs or GaInAs photocathodes:

    a. Industrial or civilian intrusion alarm, traffic or industrial
movement control or counting systems;
    b. Medical equipment;
    c. Industrial equipment used for inspection, sorting or analysis
of the properties of materials;
    d. Flame detectors for industrial furnaces;
    e. Equipment ``specially designed'' for laboratory use.
    d. Special support ``components'' for optical sensors, as
follows:
    d.1. ``Space-qualified'' cryocoolers;
    d.2. Non-``space-qualified'' cryocoolers having a cooling source
temperature below 218 K (-55 [deg]C), as follows:
    d.2.a. Closed cycle type with a specified Mean-Time-To-Failure
(MTTF) or Mean-Time-Between-Failures (MTBF), exceeding 2,500 hours;
    d.2.b. Joule-Thomson (JT) self-regulating minicoolers having
bore (outside) diameters of less than 8 mm;
    d.3. Optical sensing fibers specially fabricated either
compositionally or structurally, or modified by coating, to be
acoustically, thermally, inertially, electromagnetically or nuclear
radiation sensitive.

    Note: 6A002.d.3 does not apply to encapsulated optical sensing
fibers ``specially designed'' for bore hole sensing applications.

    e. [Reserved]
    f. `Read-Out Integrated Circuits' (`ROIC') ``specially
designed'' for ``focal plane arrays'' specified by 6A002.a.3.

    Note: 6A002.f does not apply to read-out integrated circuits
``specially designed'' for civil automotive applications.

    Technical Note: A `Read-Out Integrated Circuit' (`ROIC') is an
integrated circuit designed to underlie or be bonded to a ``focal
plane array'' (``FPA'') and used to read-out (i.e., extract and
register) signals produced by the detector elements. At a minimum
the `ROIC' reads the charge from the detector elements by extracting
the charge and applying a multiplexing function in a manner that
retains the relative spatial position and orientation information of
the detector elements for processing inside or outside the `ROIC'.

0
27. In Supplement No. 1 to part 774, Category 6, ECCN 6A003 is revised
to read as follows:

6A003 Cameras, Systems or Equipment, and ``Components'' Therefor, as
Follows (See List of Items Controlled).

License Requirements

Reason for Control: NS, NP, RS, AT, UN

                                            Country Chart (see Supp. No.
                Control(s)                         1  to part 738)

NS applies to entire entry................  NS Column 2
NP applies to cameras controlled by         NP Column 1
 6A003.a.3 or a.4 and to plug-ins in
 6A003.a.6 for cameras controlled by
 6A003.a.3 or a.4.

RS applies to 6A003.b.3, 6A003.b.4.a,       RS Column 1
 6A003.b.4.c and to items controlled in
 6A003.b.4.b that have a frame rate
 greater than 60 Hz or that incorporate a
 focal plane array with more than 111,000
 elements, or to items in 6A003.b.4.b when
 being exported or reexported to be
 embedded in a civil product. (But see
 Sec.   742.6(a)(2)(iii) and (v) for
 certain exemptions).
RS applies to items controlled in           RS Column 2
 6A003.b.4.b that have a frame rate of 60
 Hz or less and that incorporate a focal
 plane array with not more than 111,000
 elements if not being exported or
 reexported to be embedded in a civil
 product.
AT applies to entire entry................  AT Column 1
UN applies to 6A003.b.3 and b.4...........  See Sec.   746.1(b) for UN
                                             controls

    License Requirement Note: Commodities that are not subject to
the ITAR but are of the type described in USML Category XII(c) are
controlled as cameras in ECCN 6A003 when they incorporate a camera
controlled in this ECCN.

Reporting Requirements

    See Sec.  743.3 of the EAR for thermal camera reporting for
exports that are not authorized by an individually validated license
of thermal imaging cameras controlled by ECCN 6A003.b.4.b to
destinations in Country Group A:1 (see Supplement No. 1 to part 740
of the EAR), must be reported to BIS.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: $1,500, except N/A for 6A003.a.3 through a.6, b.1, b.3 and b.4
GBS: N/A

Special Conditions for STA

STA: License Exception STA may not be used to ship any commodity in
6A003.b.3 or b.4 to any of the destinations listed in Country Group
A:6 (See Supplement No.1 to part 740 of the EAR).

List of Items Controlled

Related Controls: (1) See ECCNs 6E001 (``development''), 6E002
(``production''), and 6E201 (``use'') for technology for items
controlled under this entry. (2) Also see ECCN 6A203. (3) See ECCN
0A919 for foreign made military commodities that incorporate cameras
described in 6A003. (4) Section 744.9 imposes a license requirement
on cameras described in 6A003 if being exported, reexported, or
transferred (in-country) for use by a military end-user or for
incorporation into a commodity controlled by ECCN 0A919. (5) See
USML Category XII(c) and (e) for cameras subject to the ITAR.
Related Definitions: N/A
Items:

    a. Instrumentation cameras and ``specially designed''
``components'' therefor, as follows:

    Note: Instrumentation cameras, controlled by 6A003.a.3 to
6A003.a.5, with modular structures should be evaluated by their
maximum capability, using plug-ins available according to the camera
manufacturer's specifications.

    a.1. [Reserved]
    a.2. [Reserved]
    a.3. Electronic streak cameras having temporal resolution better
than 50 ns;
    a.4. Electronic framing cameras having a speed exceeding
1,000,000 frames/s;
    a.5. Electronic cameras having all of the following:
    a.5.a. An electronic shutter speed (gating capability) of less
than 1[micro]s per full frame; and
    a.5.b. A read out time allowing a framing rate of more than 125
full frames per second;
    a.6. Plug-ins having all of the following characteristics:
    a.6.a. ``Specially designed'' for instrumentation cameras which
have modular structures and that are controlled by 6A003.a; and
    a.6.b. Enabling these cameras to meet the characteristics
specified by 6A003.a.3, 6A003.a.4 or 6A003.a.5, according to the
manufacturer's specifications;
    b. Imaging cameras as follows:

    Note: 6A003.b does not control television or video cameras
``specially designed'' for television broadcasting.

    b.1. Video cameras incorporating solid state sensors, having a
peak response in the wavelength range exceeding 10 nm, but not
exceeding 30,000 nm and having all of the following:
    b.1.a. Having any of the following:
    b.1.a.1. More than 4 x 10\6\ ``active pixels'' per solid state
array for monochrome (black and white) cameras;
    b.1.a.2. More than 4 x 10\6\ ``active pixels'' per solid state
array for color cameras incorporating three solid state arrays; or
    b.1.a.3. More than 12 x 10\6\ ``active pixels'' for solid state
array color cameras incorporating one solid state array; and
    b.1.b. Having any of the following:
    b.1.b.1. Optical mirrors controlled by 6A004.a.;
    b.1.b.2. Optical control equipment controlled by 6A004.d.; or
    b.1.b.3. The capability for annotating internally generated
`camera tracking data';

    Technical Notes:

    1. For the purposes of this entry, digital video cameras should
be evaluated by the maximum number of ``active pixels'' used for
capturing moving images.
    2. For the purpose of this entry, `camera tracking data' is the
information necessary to define camera line of sight orientation
with respect to the earth. This includes: (1) the horizontal angle
the camera line of sight makes with respect to the earth's magnetic
field direction and; (2) the vertical angle between the camera line
of sight and the earth's horizon.
    b.2. Scanning cameras and scanning camera systems, having all of
the following:
    b.2.a. A peak response in the wavelength range exceeding 10 nm,
but not exceeding 30,000 nm;
    b.2.b. Linear detector arrays with more than 8,192 elements per
array; and
    b.2.c. Mechanical scanning in one direction;

    Note: 6A003.b.2 does not apply to scanning cameras and scanning
camera systems, ``specially designed'' for any of the following:

    a. Industrial or civilian photocopiers;
    b. Image scanners ``specially designed'' for civil, stationary,
close proximity scanning applications (e.g., reproduction of images
or print contained in documents, artwork or photographs); or
    c. Medical equipment.
    b.3. Imaging cameras incorporating image intensifier tubes
having the characteristics listed in 6A002.a.2.a or 6A002.a.2.b;
    b.4. Imaging cameras incorporating ``focal plane arrays'' having
any of the following:
    b.4.a. Incorporating ``focal plane arrays'' controlled by
6A002.a.3.a to 6A002.a.3.e;
    b.4.b. Incorporating ``focal plane arrays'' controlled by
6A002.a.3.f; or
    b.4.c. Incorporating ``focal plane arrays'' controlled by
6A002.a.3.g;

    Note 1: Imaging cameras described in 6A003.b.4 include ``focal
plane arrays'' combined with sufficient ``signal processing''
electronics, beyond the read out integrated circuit, to enable as a
minimum the output of an analog or digital signal once power is
supplied.

    Note 2: 6A003.b.4.a does not control imaging cameras
incorporating linear ``focal plane arrays'' with 12 elements or
fewer, not employing time-delay-and-integration within the element
and designed for any of the following:

    a. Industrial or civilian intrusion alarm, traffic or industrial
movement control or counting systems;
    b. Industrial equipment used for inspection or monitoring of
heat flows in buildings, equipment or industrial processes;
    c. Industrial equipment used for inspection, sorting or analysis
of the properties of materials;
    d. Equipment ``specially designed'' for laboratory use; or
    e. Medical equipment.

    Note 3: 6A003.b.4.b does not control imaging cameras having any
of the following:

    a. A maximum frame rate equal to or less than 9 Hz;
    b. Having all of the following:
    1. Having a minimum horizontal or vertical `Instantaneous-Field-
of-View (IFOV)' of at least 2 mrad (milliradians);

    2. Incorporating a fixed focal-length lens that is not designed
to be removed;
    3. Not incorporating a `direct view' display; and

    Technical Note: `Direct view' refers to an imaging camera
operating in the infrared spectrum that presents a visual image to a
human observer using a near-to-eye micro display incorporating any
light-security mechanism.

    4. Having any of the following:
    a. No facility to obtain a viewable image of the detected field-
of-view; or
    b. The camera is designed for a single kind of application and
designed not to be user modified; or

    Technical Note:

    `Instantaneous Field of View (IFOV)' specified in Note 3.b is
the lesser figure of the `Horizontal FOV' or the `Vertical FOV'.
    `Horizontal IFOV' = horizontal Field of View (FOV)/number of
horizontal detector elements.
    `Vertical IFOV'= vertical Field of View (FOV)/number of vertical
detector elements.
    c. The camera is ``specially designed'' for installation into a
civilian passenger land vehicle and having all of the following:
    1. The placement and configuration of the camera within the
vehicle are solely to assist the driver in the safe operation of the
vehicle;
    2. Is operable only when installed in any of the following:
    a. The civilian passenger land vehicle for which it was intended
and the vehicle weighs less than 4,500 kg (gross vehicle weight); or
    b. A ``specially designed'', authorized maintenance test
facility; and
    3. Incorporates an active mechanism that forces the camera not
to function when it is removed from the vehicle for which it was
intended.

    Note: When necessary, details of the items will be provided,
upon request, to the Bureau of Industry and Security in order to
ascertain compliance with the conditions described in Note 3.b.4 and
Note 3.c in this Note to 6A003.b.4.b.

    Note 4: 6A003.b.4.c does not apply to `imaging cameras' having
any of the following characteristics:

    a. Having all of the following:
    1. Where the camera is ``specially designed'' for installation
as an integrated component into indoor and wall-plug-operated
systems or equipment, limited by design for a single kind of
application, as follows:
    a. Industrial process monitoring, quality control, or analysis
of the properties of materials;
    b. Laboratory equipment ``specially designed'' for scientific
research;
    c. Medical equipment;
    d. Financial fraud detection equipment; and
    2. Is only operable when installed in any of the following:
    a. The system(s) or equipment for which it was intended; or
    b. A ``specially designed,'' authorized maintenance facility;
and
    3. Incorporates an active mechanism that forces the camera not
to function when it is removed from the system(s) or equipment for
which it was intended;
    b. Where the camera is ``specially designed'' for installation
into a civilian passenger land vehicle or passenger and vehicle
ferries and having all of the following:
    1. The placement and configuration of the camera within the
vehicle or ferry are solely to assist the driver or operator in the
safe operation of the vehicle or ferry;
    2. Is only operable when installed in any of the following:
    a. The civilian passenger land vehicle for which it was intended
and the vehicle weighs less than 4,500 kg (gross vehicle weight);
    b. The passenger and vehicle ferry for which it was intended and
having a length overall (LOA) 65 m or greater; or
    c. A ``specially designed'', authorized maintenance test
facility; and
    3. Incorporates an active mechanism that forces the camera not
to function when it is removed from the vehicle for which it was
intended;
    c. Limited by design to have a maximum ``radiant sensitivity''
of 10 mA/W or less for wavelengths exceeding 760 nm, having all of
the following:
    1. Incorporating a response limiting mechanism designed not to
be removed or modified; and
    2. Incorporates an active mechanism that forces the camera not
to function when the response limiting mechanism is removed; and
    3. Not ``specially designed'' or modified for underwater use; or
    d. Having all of the following:
    1. Not incorporating a 'direct view' or electronic image
display;
    2. Has no facility to output a viewable image of the detected
field of view;
    3. The ``focal plane array'' is only operable when installed in
the camera for which it was intended; and
    4. The ``focal plane array'' incorporates an active mechanism
that forces it to be permanently inoperable when removed from the
camera for which it was intended.

    Note:  When necessary, details of the item will be provided,
upon request, to the Bureau of Industry and Security in order to
ascertain compliance with the conditions described in Note 4 above.

    b.5. Imaging cameras incorporating solid-state detectors
specified by 6A002.a.1.

0
28. In Supplement No. 1 to part 774, Category 6, ECCN 6A005 is revised
to read as follows:

6A005 ``Lasers,'' ``Components'' and Optical Equipment, as Follows
(See List of Items Controlled), Excluding Items That Are Subject to
the Export Licensing Authority of the Nuclear Regulatory Commission
(See 10 CFR Part 110).

License Requirements

Reason for Control: NS, NP, AT

                                              Country chart  (see Supp.
                Control(s)                       No. 1  to part 738)

NS applies to entire entry................  NS Column 2
NP applies to lasers controlled by          NP Column 1
 6A005.a.2, a.3, a.4, b.2.b, b.3, b.4,
 b.6.c, c.1.b, c.2.b, d.2, d.3.c, or d.4.c
 that meet or exceed the technical
 parameters described in 6A205.
AT applies to entire entry................  AT Column 1

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: N/A for NP items; $3,000 for all other items
GBS: Neodymium-doped (other than glass) ``lasers'' controlled by
6A005.b.6.d.2 (except 6A005.b.6.d.2.b) that have an output
wavelength exceeding 1,000 nm, but not exceeding 1,100 nm, and an
average or CW output power not exceeding 2 kW, and operate in a
pulse-excited, non- ``Q-switched'' multiple-transverse mode, or in a
continuously excited, multiple-transverse mode; Dye and Liquid
Lasers controlled by 6A005.c.1, c.2 and c.3, except for a pulsed
single longitudinal mode oscillator having an average output power
exceeding 1 W and a repetition rate exceeding 1 kHz if the ``pulse
duration'' is less than 100 ns; CO ``lasers'' controlled by
6A005.d.2 having a CW maximum rated single or multimode output power
not exceeding 10 kW; CO2 or CO/CO2 ``lasers''
controlled by 6A005.d.3 having an output wavelength in the range
from 9,000 to 11,000 nm and having a pulsed output not exceeding 2 J
per pulse and a maximum rated average single or multimode output
power not exceeding 5 kW; and CO2 ``lasers'' controlled
by 6A005.d.3 that operate in CW multiple-transverse mode, and having
a CW output power not exceeding 15 kW.

List of Items Controlled

Related Controls (1) See ECCN 6D001 for ``software'' for items
controlled under this entry. (2) See ECCNs 6E001 (``development''),
6E002 (``production''), and 6E201 (``use'') for technology for items
controlled under this entry. (3) Also see ECCNs 6A205 and 6A995. (4)
See ECCN 3B001 for excimer ``lasers'' ``specially designed'' for
lithography equipment. (5) ``Lasers'' ``specially designed'' or
prepared for use in isotope separation are subject to the export
licensing authority of the Nuclear Regulatory Commission (see 10 CFR
part 110). (6) See USML Category XII(b) and (e) for laser systems or
lasers subject to the ITAR. (7) See USML Category XVIII for certain
laser-based directed energy weapon systems, equipment, and
components subject to the ITAR.
Related Definitions: (1) `Wall-plug efficiency' is defined as the
ratio of ``laser'' output power (or ``average output power'') to
total electrical input power required to operate the ``laser'',
including the power supply/conditioning and thermal conditioning/

heat exchanger, see 6A005.a.6.b.1 and 6A005.b.6; (2) `Non-repetitive
pulsed' refers to ``lasers'' that produce either a single output
pulse or that have a time interval between pulses exceeding one
minute, see Note 2 of 6A005 and 6A005.d.6.
Items:

    Notes:

    1. Pulsed ``lasers'' include those that run in a continuous wave
(CW) mode with pulses superimposed.
    2. Excimer, semiconductor, chemical, CO, CO2, and
`non-repetitive pulsed' Nd:glass ``lasers'' are only specified by
6A005.d.

    Technical Note: `Non-repetitive pulsed' refers to ``lasers''
that produce either a single output pulse or that have a time
interval between pulses exceeding one minute.

    3. 6A005 includes fiber ``lasers''.
    4. The control status of ``lasers'' incorporating frequency
conversion (i.e., wavelength change) by means other than one
``laser'' pumping another ``laser'' is determined by applying the
control parameters for both the output of the source ``laser'' and
the frequency-converted optical output.
    5. 6A005 does not control ``lasers'' as follows:
    a. Ruby with output energy below 20 J;
    b. Nitrogen;
    c. Krypton.
    6. For the purposes of 6A005.a and 6A005.b, `single transverse
mode' refers to ``lasers'' with a beam profile having an M\2\-factor
of less than 1.3, while `multiple transverse mode' refers to
``lasers'' with a beam profile having an M\2\-factor of 1.3 or
higher.
    a. Non-``tunable'' continuous wave ``(CW) lasers'' having any of
the following:
    a.1. Output wavelength less than 150 nm and output power
exceeding 1W;
    a.2. Output wavelength of 150 nm or more but not exceeding 510
nm and output power exceeding 30 W;

    Note: 6A005.a.2 does not control Argon ``lasers'' having an
output power equal to or less than 50 W.

    a.3. Output wavelength exceeding 510 nm but not exceeding 540 nm
and any of the following:
    a.3.a. `Single transverse mode' output and output power
exceeding 50 W; or
    a.3.b. `Multiple transverse mode' output and output power
exceeding 150 W;
    a.4. Output wavelength exceeding 540 nm but not exceeding 800 nm
and output power exceeding 30 W;
    a.5. Output wavelength exceeding 800 nm but not exceeding 975 nm
and any of the following:
    a.5.a. `Single transverse mode' output and output power
exceeding 50 W; or
    a.5.b. `Multiple transverse mode' output and output power
exceeding 80 W;
    a.6. Output wavelength exceeding 975 nm but not exceeding 1,150
nm and any of the following;
    a.6.a. `Single transverse mode' output and any of the following:
    a.6.a.1. Average output power exceeding 1,000 W; or
    a.6.a.2. Having all of the following:
    a.6.a.2.a. Average output power exceeding 500 W; and
    a.6.a.2.b. Spectral bandwidth less than 40 GHz; or
    a.6.b. `Multiple transverse mode' output and any of the
following:
    a.6.b.1. `Wall-plug efficiency' exceeding 18% and output power
exceeding 1,000 W; or
    a.6.b.2. Output power exceeding 2 kW;

    Note 1: 6A005.a.6.b does not control `multiple transverse mode',
industrial ``lasers'' with output power exceeding 2 kW and not
exceeding 6 kW with a total mass greater than 1,200 kg. For the
purpose of this note, total mass includes all ``components''
required to operate the ``laser,'' e.g., ``laser,'' power supply,
heat exchanger, but excludes external optics for beam conditioning
or delivery.

    Note 2: 6A005.a.6.b does not apply to `multiple transverse
mode', industrial ``lasers'' having any of the following:

    a. [Reserved];
    b. Output power exceeding 1 kW but not exceeding 1.6 kW and
having a BPP exceeding 1.25 mmmrad;
    c. Output power exceeding 1.6 kW but not exceeding 2.5 kW and
having a BPP exceeding 1.7 mmmrad;
    d. Output power exceeding 2.5 kW but not exceeding 3.3 kW and
having a BPP exceeding 2.5 mmmrad;
    e. Output power exceeding 3.3 kW but not exceeding 6 kW and
having a BPP exceeding 3.5 mmmrad;
    f. [Reserved]
    g. [Reserved]
    h. Output power exceeding 6 kW but not exceeding 8 kW and having
a BPP exceeding 12 mmmrad; or
    i. Output power exceeding 8 kW but not exceeding 10 kW and
having a BPP exceeding 24 mmmrad;
    a.7. Output wavelength exceeding 1,150 nm but not exceeding
1,555 nm and any of the following:
    a.7.a. `Single transverse mode' and output power exceeding 50 W;
or
    a.7.b. `Multiple transverse mode' and output power exceeding 80
W;
    a.8. Output wavelength exceeding 1,555 nm but not exceeding
1,850 nm and output power exceeding 1 W;
    a.9. Output wavelength exceeding 1,850 nm but not exceeding
2,100 nm, and any of the following:
    a.9.a. `Single transverse mode' and output power exceeding 1 W;
or
    a.9.b. `Multiple transverse mode' output and output power
exceeding 120 W; or
    a.10. Output wavelength exceeding 2,100 nm and output power
exceeding 1 W;
    b. Non-``tunable'' ``pulsed lasers'' having any of the
following:
    b.1. Output wavelength less than 150 nm and any of the
following:
    b.1.a. Output energy exceeding 50 mJ per pulse and ``peak
power'' exceeding 1 W; or
    b.1.b. ``Average output power'' exceeding 1 W;
    b.2. Output wavelength of 150 nm or more but not exceeding 510
nm and any of the following:
    b.2.a. Output energy exceeding 1.5 J per pulse and ``peak
power'' exceeding 30 W; or
    b.2.b. ``Average output power'' exceeding 30 W;

    Note: 6A005.b.2.b does not control Argon ``lasers'' having an
``average output power'' equal to or less than 50 W.

    b.3. Output wavelength exceeding 510 nm, but not exceeding 540
nm and any of the following:
    b.3.a. `Single transverse mode' output and any of the following:
    b.3.a.1. Output energy exceeding 1.5 J per pulse and ``peak
power'' exceeding 50 W; or
    b.3.a.2. ``Average output power'' exceeding 50 W; or
    b.3.b. `Multiple transverse mode' output and any of the
following:
    b.3.b.1. Output energy exceeding 1.5 J per pulse and ``peak
power'' exceeding 150 W; or
    b.3.b.2. ``Average output power'' exceeding 150 W;
    b.4. Output wavelength exceeding 540 nm but not exceeding 800 nm
and any of the following:
    b.4.a. ``Pulse duration'' less than 1 ps and any of the
following:
    b.4.a.1. Output energy exceeding 0.005 J per pulse and ``peak
power'' exceeding 5 GW; or
    b.4.a.2. ``Average output power'' exceeding 20 W; or
    b.4.b. ``Pulse duration'' equal to or exceeding 1 ps and any of
the following:
    b.4.b.1. Output energy exceeding 1.5 J per pulse and ``peak
power'' exceeding 30 W; or
    b.4.b.2. ``Average output power'' exceeding 30 W;
    b.5. Output wavelength exceeding 800 nm but not exceeding 975 nm
and any of the following:
    b.5.a. ``Pulse duration'' less than 1ps and any of the
following:
    b.5.a.1. Output energy exceeding 0.005 J per pulse and ``peak
power'' exceeding 5 GW; or
    b.5.a.2. `Single transverse mode' output and ``average output
power'' exceeding 20 W;
    b.5.b. ``Pulse duration'' equal to or exceeding 1 ps and not
exceeding 1 [mu]s and any of the following:
    b.5.b.1. Output energy exceeding 0.5 J per pulse and ``peak
power'' exceeding 50 W;
    b.5.b.2. `Single transverse mode' output and ``average output
power'' exceeding 20 W; or
    b.5.b.3. `Multiple transverse mode' output and ``average output
power'' exceeding 50 W; or
    b.5.c. ``Pulse duration'' exceeding 1 [mu]s and any of the
following:
    b.5.c.1. Output energy exceeding 2 J per pulse and ``peak
power'' exceeding 50 W;
    b.5.c.2. `Single transverse mode' output and ``average output
power'' exceeding 50 W; or
    b.5.c.3. `Multiple transverse mode' output and ``average output
power'' exceeding 80 W.
    b.6. Output wavelength exceeding 975 nm but not exceeding 1,150
nm and any of the following:
    b.6.a. ``Pulse duration'' of less than 1 ps, and any of the
following:
    b.6.a.1. Output ``peak power'' exceeding 2 GW per pulse;
    b.6.a.2. ``Average output power'' exceeding 30 W; or
    b.6.a.3. Output energy exceeding 0.002 J per pulse;

    b.6.b. ``Pulse duration'' equal to or exceeding 1 ps and less
than 1 ns, and any of the following:
    b.6.b.1. Output ``peak power'' exceeding 5 GW per pulse;
    b.6.b.2. ``Average output power'' exceeding 50 W; or
    b.6.b.3. Output energy exceeding 0.1 J per pulse;
    b.6.c. ``Pulse duration'' equal to or exceeding 1 ns but not
exceeding 1 [mu]s and any of the following:
    b.6.c.1. `Single transverse mode' output and any of the
following:
    b.6.c.1.a. ``Peak power'' exceeding 100 MW;
    b.6.c.1.b. ``Average output power'' exceeding 20 W limited by
design to a maximum pulse repetition frequency less than or equal to
1 kHz;
    b.6.c.1.c. `Wall-plug efficiency' exceeding 12%, ``average
output power'' exceeding 100 W and capable of operating at a pulse
repetition frequency greater than 1 kHz;
    b.6.c.1.d. ``Average output power'' exceeding 150 W and capable
of operating at a pulse repetition frequency greater than 1 kHz; or
    b.6.c.1.e. Output energy exceeding 2 J per pulse; or
    b.6.c.2. `Multiple transverse mode' output and any of the
following:
    b.6.c.2.a. ``Peak power'' exceeding 400 MW;
    b.6.c.2.b. `Wall-plug efficiency' exceeding 18% and ``average
output power'' exceeding 500 W;
    b.6.c.2.c. ``Average output power'' exceeding 2 kW; or
    b.6.c.2.d. Output energy exceeding 4 J per pulse; or
    b.6.d. ``Pulse duration'' exceeding 1 [mu]s and any of the
following:
    b.6.d.1. `Single transverse mode' output and any of the
following:
    b.6.d.1.a. ``Peak power'' exceeding 500 kW;
    b.6.d.1.b. `Wall-plug efficiency' exceeding 12% and ``average
output power'' exceeding 100 W; or
    b.6.d.1.c. ``Average output power'' exceeding 150 W; or
    b.6.d.2. `Multiple transverse mode' output and any of the
following:
    b.6.d.2.a. ``Peak power'' exceeding 1 MW;
    b.6.d.2.b. `Wall-plug efficiency' exceeding 18% and ``average
output power'' exceeding 500 W; or
    b.6.d.2.c. ``Average output power'' exceeding 2 kW;
    b.7. Output wavelength exceeding 1,150 nm but not exceeding
1,555 nm and any of the following:
    b.7.a. ``Pulse duration'' not exceeding 1 [mu]s and any of the
following:
    b.7.a.1. Output energy exceeding 0.5 J per pulse and ``peak
power'' exceeding 50 W;
    b.7.a.2. `Single transverse mode' output and ``average output
power'' exceeding 20 W; or
    b.7.a.3. `Multiple transverse mode' output and ``average output
power'' exceeding 50 W; or
    b.7.b. ``Pulse duration'' exceeding 1 [mu]s and any of the
following:
    b.7.b.1. Output energy exceeding 2 J per pulse and ``peak
power'' exceeding 50 W;
    b.7.b.2. `Single transverse mode' output and ``average output
power'' exceeding 50 W; or
    b.7.b.3. `Multiple transverse mode' output and ``average output
power'' exceeding 80 W;
    b.8. Output wavelength exceeding 1,555 nm but not exceeding
1,850 nm, and any of the following:
    b.8.a. Output energy exceeding 100 mJ per pulse and ``peak
power'' exceeding 1 W; or
    b.8.b. ``Average output power'' exceeding 1 W;
    b.9. Output wavelength exceeding 1,850 nm but not exceeding
2,100 nm, and any of the following:
    b.9.a. `Single transverse mode' and any of the following:
    b.9.a.1. Output energy exceeding 100 mJ per pulse and ``peak
power'' exceeding 1 W; or
    b.9.a.2. ``Average output power'' exceeding 1 W;
    b.9.b. `Multiple transverse mode' and any of the following:
    b.9.b.1. Output energy exceeding 100 mJ per pulse and ``peak
power'' exceeding 10 kW; or
    b.9.b.2. ``Average output power'' exceeding 120 W; or
    b.10. Output wavelength exceeding 2,100 nm and any of the
following:
    b.10.a. Output energy exceeding 100 mJ per pulse and ``peak
power'' exceeding 1 W; or
    b.10.b. ``Average output power'' exceeding 1 W;
    c. ``Tunable'' lasers having any of the following:
    c.1. Output wavelength less than 600 nm and any of the
following:
    c.1.a. Output energy exceeding 50 mJ per pulse and ``peak
power'' exceeding 1 W; or
    c.1.b. Average or CW output power exceeding 1W;

    Note:  6A005.c.1 does not apply to dye ``lasers'' or other
liquid ``lasers,'' having a multimode output and a wavelength of 150
nm or more but not exceeding 600 nm and all of the following:

    1. Output energy less than 1.5 J per pulse or a ``peak power''
less than 20 W; and
    2. Average or CW output power less than 20 W.
    c.2. Output wavelength of 600 nm or more but not exceeding 1,400
nm, and any of the following:
    c.2.a. Output energy exceeding 1 J per pulse and ``peak power''
exceeding 20 W; or
    c.2.b. Average or CW output power exceeding 20 W; or
    c.3. Output wavelength exceeding 1,400 nm and any of the
following:
    c.3.a. Output energy exceeding 50 mJ per pulse and ``peak
power'' exceeding 1 W; or
    c.3.b. Average or CW output power exceeding 1 W;
    d. Other ``lasers'', not controlled by 6A005.a, 6A005.b, or
6A005.c as follows:
    d.1. Semiconductor ``lasers'' as follows:

    Notes:

    1. 6A005.d.1 includes semiconductor ``lasers'' having optical
output connectors (e.g., fiber optic pigtails).
    2. The control status of semiconductor ``lasers'' ``specially
designed'' for other equipment is determined by the control status
of the other equipment.
    d.1.a. Individual single transverse mode semiconductor
``lasers'' having any of the following:
    d.1.a.1. Wavelength equal to or less than 1,510 nm and average
or CW output power, exceeding 1.5 W; or
    d.1.a.2. Wavelength greater than 1,510 nm and average or CW
output power, exceeding 500 mW;
    d.1.b. Individual `multiple-transverse mode' semiconductor
``lasers'' having any of the following:
    d.1.b.1. Wavelength of less than 1,400 nm and average or CW
output power, exceeding 15 W;
    d.1.b.2. Wavelength equal to or greater than 1,400 nm and less
than 1,900 nm and average or CW output power, exceeding 2.5 W; or
    d.1.b.3. Wavelength equal to or greater than 1,900 nm and
average or CW output power, exceeding 1 W;
    d.1.c. Individual semiconductor ``laser'' 'bars' having any of
the following:
    d.1.c.1. Wavelength of less than 1,400 nm and average or CW
output power, exceeding 100 W;
    d.1.c.2. Wavelength equal to or greater than 1,400 nm and less
than 1,900 nm and average or CW output power, exceeding 25 W; or
    d.1.c.3. Wavelength equal to or greater than 1,900 nm and
average or CW output power, exceeding 10 W;
    d.1.d. Semiconductor ``laser'' `stacked arrays' (two dimensional
arrays) having any of the following:
    d.1.d.1. Wavelength less than 1,400 nm and having any of the
following:
    d.1.d.1.a. Average or CW total output power less than 3 kW and
having average or CW output `power density' greater than 500 W/
cm\2\;
    d.1.d.1.b. Average or CW total output power equal to or
exceeding 3 kW but less than or equal to 5 kW, and having average or
CW output `power density' greater than 350W/cm\2\;
    d.1.d.1.c. Average or CW total output power exceeding 5 kW;
    d.1.d.1.d. Peak pulsed `power density' exceeding 2,500 W/cm\2\;
or

    Note:  6A005.d.1.d.1.d does not apply to epitaxially-fabricated
monolithic devices.

    d.1.d.1.e. Spatially coherent average or CW total output power,
greater than 150 W;
    d.1.d.2. Wavelength greater than or equal to 1,400 nm but less
than 1,900 nm, and having any of the following:
    d.1.d.2.a. Average or CW total output power less than 250 W and
average or CW output `power density' greater than 150 W/cm2;
    d.1.d.2.b. Average or CW total output power equal to or
exceeding 250 W but less than or equal to 500 W, and having average
or CW output `power density' greater than 50W/cm\2\;
    d.1.d.2.c. Average or CW total output power exceeding 500 W;
    d.1.d.2.d. Peak pulsed `power density' exceeding 500 W/cm\2\; or

    Note:  6A005.d.1.d.2.d does not apply to epitaxially-fabricated
monolithic devices.

    d.1.d.2.e. Spatially coherent average or CW total output power,
exceeding 15 W;
    d.1.d.3. Wavelength greater than or equal to 1,900 nm and having
any of the following:

    d.1.d.3.a. Average or CW output `power density' greater than 50
W/cm\2\;
    d.1.d.3.b. Average or CW output power greater than 10 W; or
    d.1.d.3.c. Spatially coherent average or CW total output power,
exceeding 1.5 W; or
    d.1.d.4. At least one ``laser'' `bar' specified by 6A005.d.1.c;

    Technical Note:  For the purposes of 6A005.d.1.d, 'power
density' means the total ``laser'' output power divided by the
emitter surface area of the `stacked array'.

    d.1.e. Semiconductor ``laser'' `stacked arrays', other than
those specified by 6.A005.d.1.d, having all of the following:
    d.1.e.1. ``Specially designed'' or modified to be combined with
other `stacked arrays' to form a larger `stacked array'; and
    d.1.e.2. Integrated connections, common for both electronics and
cooling;

    Note 1:  `Stacked arrays', formed by combining semiconductor
``laser'' `stacked arrays' specified by 6A005.d.1.e, that are not
designed to be further combined or modified are specified by
6A005.d.1.d.

    Note 2:  `Stacked arrays', formed by combining semiconductor
``laser'' `stacked arrays' specified by 6A005.d.1.e, that are
designed to be further combined or modified are specified by
6A005.d.1.e.

    Note 3:  6A005.d.1.e does not apply to modular assemblies of
single `bars' designed to be fabricated into end to end stacked
linear arrays.

    Technical Notes:

    1. Semiconductor ``lasers'' are commonly called ``laser''
diodes.
    2. A `bar' (also called a semiconductor ``laser'' `bar', a
``laser'' diode `bar' or diode `bar') consists of multiple
semiconductor ``lasers'' in a one dimensional array.
    3. A `stacked array' consists of multiple `bars' forming a two
dimensional array of semiconductor ``lasers''.
    d.2. Carbon monoxide (CO) ``lasers'' having any of the
following:
    d.2.a. Output energy exceeding 2 J per pulse and ``peak power''
exceeding 5 kW; or
    d.2.b. Average or CW output power, exceeding 5 kW;
    d.3. Carbon dioxide (CO2) ``lasers'' having any of
the following:
    d.3.a. CW output power exceeding 15 kW;
    d.3.b. Pulsed output with ``pulse duration'' exceeding 10 [mu]s
and any of the following:
    d.3.b.1. ``Average output power'' exceeding 10 kW; or
    d.3.b.2. ``Peak power'' exceeding 100 kW; or
    d.3.c. Pulsed output with a ``pulse duration'' equal to or less
than 10 [mu]s and any of the following:
    d.3.c.1. Pulse energy exceeding 5 J per pulse; or
    d.3.c.2. ``Average output power'' exceeding 2.5 kW;
    d.4. Excimer ``lasers'' having any of the following:
    d.4.a. Output wavelength not exceeding 150 nm and any of the
following:
    d.4.a.1. Output energy exceeding 50 mJ per pulse; or
    d.4.a.2. ``Average output power'' exceeding 1 W;
    d.4.b. Output wavelength exceeding 150 nm but not exceeding 190
nm and any of the following:
    d.4.b.1. Output energy exceeding 1.5 J per pulse; or
    d.4.b.2. ``Average output power'' exceeding 120 W;
    d.4.c. Output wavelength exceeding 190 nm but not exceeding 360
nm and any of the following:
    d.4.c.1. Output energy exceeding 10 J per pulse; or
    d.4.c.2. ``Average output power'' exceeding 500 W; or
    d.4.d. Output wavelength exceeding 360 nm and any of the
following:
    d.4.d.1. Output energy exceeding 1.5 J per pulse; or
    d.4.d.2. ``Average output power'' exceeding 30 W;

    Note: For excimer ``lasers'' ``specially designed'' for
lithography equipment, see 3B001.

    d.5. ``Chemical lasers'' as follows:
    d.5.a. Hydrogen Fluoride (HF) ``lasers';
    d.5.b. Deuterium Fluoride (DF) ``lasers'';
    d.5.c. `Transfer lasers' as follows:
    d.5.c.1. Oxygen Iodine (O2-I) ``lasers'';
    d.5.c.2. Deuterium Fluoride-Carbon dioxide (DF-CO2)
``lasers'';

    Technical Note:  `Transfer lasers' are ``lasers'' in which the
lasing species are excited through the transfer of energy by
collision of a non-lasing atom or molecule with a lasing atom or
molecule species.

    d.6. `Non-repetitive pulsed' Neodymium (Nd) glass ``lasers''
having any of the following:
    d.6.a. A ``pulse duration'' not exceeding 1 [mu]s and output
energy exceeding 50 J per pulse; or
    d.6.b. A ``pulse duration'' exceeding 1 [mu]s and output energy
exceeding 100 J per pulse;
    e. ``Components'' as follows:
    e.1. Mirrors cooled either by `active cooling' or by heat pipe
cooling;

    Technical Note: `Active cooling' is a cooling technique for
optical ``components'' using flowing fluids within the subsurface
(nominally less than 1 mm below the optical surface) of the optical
component to remove heat from the optic.

    e.2. Optical mirrors or transmissive or partially transmissive
optical or electro-optical-''components,'' other than fused tapered
fiber combiners and Multi-Layer Dielectric gratings (MLDs),
``specially designed'' for use with controlled ``lasers'';

    Note to 6A005.e.2: Fiber combiners and MLDs are specified by
6A005.e.3.

    e.3. Fiber ``laser'' ``components'' as follows:
    e.3.a. Multimode to multimode fused tapered fiber combiners
having all of the following:
    e.3.a.1. An insertion loss better (less) than or equal to 0.3 dB
maintained at a rated total average or CW output power (excluding
output power transmitted through the single mode core if present)
exceeding 1,000 W; and
    e.3.a.2. Number of input fibers equal to or greater than 3;
    e.3.b. Single mode to multimode fused tapered fiber combiners
having all of the following:
    e.3.b.1. An insertion loss better (less) than 0.5 dB maintained
at a rated total average or CW output power exceeding 4,600 W;
    e.3.b.2. Number of input fibers equal to or greater than 3; and
    e.3.b.3. Having any of the following:
    e.3.b.3.a. A Beam Parameter Product (BPP) measured at the output
not exceeding 1.5 mm mrad for a number of input fibers less than or
equal to 5; or
    e.3.b.3.b. A BPP measured at the output not exceeding 2.5 mm
mrad for a number of input fibers greater than 5;
    e.3.c. MLDs having all of the following:
    e.3.c.1. Designed for spectral or coherent beam combination of 5
or more fiber ``lasers;'' and
    e.3.c.2. CW ``Laser'' Induced Damage Threshold (LIDT) greater
than or equal to 10 kW/cm\2\;
    f. Optical equipment as follows:
    N.B.: For shared aperture optical elements, capable of operating
in ``Super-High Power Laser'' (``SHPL'') applications, see the U.S.
Munitions List (22 CFR part 121).
    f.1. [Reserved]
    N.B.: For items previously specified by 6A005.f.1, see 6A004.f.
    f.2. ``Laser'' diagnostic equipment ``specially designed'' for
dynamic measurement of ``SHPL'' system angular beam steering errors
and having an angular ``accuracy'' of 10 [mu]rad (microradians) or
less (better);
    f.3. Optical equipment and ``components'', ``specially
designed'' for coherent beam combination in a phased-array ``SHPL''
system and having any of the following:
    f.3.a. An ``accuracy'' of 0.1 [micro]m or less, for wavelengths
greater than 1 [micro]m; or
    f.3.b. An ``accuracy'' of [lambda]/10 or less (better) at the
designed wavelength, for wavelengths equal to or less than 1
[micro]m;
    f.4. Projection telescopes ``specially designed'' for use with
``SHPL'' systems;
    g. `Laser acoustic detection equipment' having all of the
following:
    g.1. CW ``laser'' output power greater than or equal to 20 mW;
    g.2. ``Laser'' frequency stability equal to or better (less)
than 10 MHz;
    g.3. ``Laser'' wavelengths equal to or exceeding 1,000 nm but
not exceeding 2,000 nm;
    g.4. Optical system resolution better (less) than 1 nm; and
    g.5. Optical Signal to Noise ratio equal or exceeding to 10\3\.

    Technical Note:  `Laser acoustic detection equipment' is
sometimes referred to as a ``Laser'' Microphone or Particle Flow
Detection Microphone.

0
29. In Supplement No. 1 to part 774, Category 6, ECCN 6B002 is added to
read as follows:

6B002 Masks and Reticles, ``Specially Designed'' for Optical Sensors
Specified by 6A002.a.1.b or 6A002.a.1.d.

License Requirements

Reason for Control: NS, AT

                                              Country chart  (see Supp.
                Control(s)                       No. 1 to part 738)

NS applies to entire entry................  NS Column 2
AT applies to entire entry................  AT Column 1

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: $5,000
GBS: Yes

List of Items Controlled

Related Controls: N/A
Related Definitions: N/A
Items:

    The list of items controlled is contained in the ECCN heading.

0
30. In Supplement No. 1 to part 774, Category 6, ECCN 6E001 is revised
to read as follows:

6E001 ``Technology'' According to the General Technology Note for
the ``Development'' of Equipment, Materials or ``Software''
Controlled by 6A (Except 6A991, 6A992, 6A994, 6A995, 6A996, 6A997,
6A998, or 6A999.c), 6B (Except 6B995), 6C (Except 6C992 or 6C994),
or 6D (Except 6D991, 6D992, or 6D993).

License Requirements

Reason for Control: NS, MT, NP, RS, CC, AT, UN

                                            Country chart (see Supp. No.
                Control(s)                         1 to part 738)

NS applies to ``technology'' for items      NS Column 1
 controlled by 6A001 to 6A008, 6B002 to
 6B008, 6C002 to 6C005, or 6D001 to 6D003.
MT applies to ``technology'' for items      MT Column 1
 controlled by 6A002, 6A007, 6A008, 6A102,
 6A107, 6A108, 6B008, 6B108, 6D001, 6D002,
 6D102 or 6D103 for MT reasons.
NP applies to ``technology'' for items      NP Column 1
 controlled by 6A003, 6A005, 6A202, 6A203,
 6A205, 6A225, 6A226, 6D001, or 6D201 for
 NP reasons.
RS applies to ``technology'' for items      RS Column 1
 controlled by 6A002.a.1, .a.2, .a.3, .c,
 or .f, 6A003.b.3 or .b.4, or 6A008.j.1.
CC applies to ``technology'' for equipment  CC Column 1
 controlled by 6A002 for CC reasons.
AT applies to entire entry................  AT Column 1
UN applies to ``technology'' for equipment  See Sec.   746.1(b) for UN
 controlled by 6A002 or 6A003 for UN         controls
 reasons.

Reporting Requirements

    See Sec.  743.1 of the EAR for reporting requirements for
exports under License Exceptions, and Validated End-User
authorizations.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

TSR: Yes, except for the following: (1) Items controlled for MT
reasons; (2) ``Technology'' for commodities controlled by 6A002,
6A004.e or 6A008.j.1; (3) ``Technology'' for 6A003 cameras, unless
for ``technology'' for the integration of 6A003 cameras into camera
systems ``specially designed'' for civil automotive applications;
(4) ``Technology'' for ``software'' ``specially designed'' for
``space qualified'' ``laser'' radar or Light Detection and Ranging
(LIDAR) equipment defined in 6A008.j.1 and controlled by 6D001 or
6D002; or (5) Exports or reexports to destinations outside of those
countries listed in Country Group A:5 (See Supplement No. 1 to part
740 of the EAR) of ``technology'' for the ``development'' of the
following: (a) Items controlled by 6A001.a.1.b, 6A001.a.1.e,
6A001.a.2.a.1, 6A001.a.2.a.2, 6A001.a.2.a.3, 6A001.a.2.a.5,
6A001.a.2.a.6, 6A001.a.2.b, 6A001.a.2.d, 6A001.a.2.e., 6A004.c,
6A004.d, 6A006.a.2, 6A006.c.1, 6A006.d, 6A006.e, 6A008.d, 6A008.h,
6A008.k, 6B008, or 6D003.a; (b) Equipment controlled by 6A001.a.2.c
or 6A001.a.2.f when ``specially designed'' for real time
applications; or (c) ``Software'' controlled by 6D001 and
``specially designed'' for the ``development'' or ``production'' of
equipment controlled by 6B008, or 6D003.a.

Special Conditions for STA

STA: License Exception STA may not be used to ship or transmit any
technology in this entry to any of the destinations listed in
Country Group A:6 (See Supplement No.1 to part 740 of the EAR).

List of Items Controlled

Related Controls: (1) Technical data directly related to satellites
and all other items described in USML Category XV are subject to the
ITAR under USML Category XV(f). (2) Technical data directly related
to laser systems, infrared imaging systems, and all other items
described in USML Category XII are subject to the ITAR under USML
Category XII(f). (3) Technical data directly related to read-out
integrated circuits described in USML Categories XII(e) or XV(e)(3)
is subject to the ITAR under USML Categories XII(f) or XV(f),
respectively. (4) See also 6E101, 6E201, and 6E991.
Related Definitions: N/A
Items:

    The list of items controlled is contained in the ECCN heading.

0
31. In Supplement No. 1 to part 774, Category 6, ECCN 6E002 is revised
to read as follows:

6E002 ``Technology'' According to the General Technology Note for
the ``Production'' of Equipment or Materials Controlled by 6A
(Except 6A991, 6A992, 6A994, 6A995, 6A996, 6A997, 6A998 or 6A999.c),
6B (Except 6B995) or 6C (except 6C992 or 6C994).

License Requirements

Reason for Control: NS, MT, NP, RS, CC, AT, UN

                                            Country chart (see Supp. No.
                Control(s)                         1 to part 738)

NS applies to ``technology'' for equipment  NS Column 1
 controlled by 6A001 to 6A008, 6B002 to
 6B008, or 6C002 to 6C005.
MT applies to ``technology'' for equipment  MT Column 1
 controlled by 6A002, 6A007, 6A008, 6A102,
 6A107, 6A108, 6B008, or 6B108 for MT
 reasons.
NP applies to ``technology'' for items      NP Column 1
 controlled by 6A003, 6A005, 6A202, 6A203,
 6A205, 6A225 or 6A226 for NP reasons.
RS applies to ``technology'' for items      RS Column 1
 controlled by 6A002.a.1, .a.2, .a.3, .c,
 or .f, 6A003.b.3 or .b.4, or 6A008.j.1.
CC applies to ``technology'' for equipment  CC Column 1
 controlled by 6A002 for CC reasons.
AT applies to entire entry................  AT Column 1
UN applies to ``technology'' for equipment  See Sec.   746.1(b) for UN
 controlled by 6A002 or 6A003 for UN         controls
 reasons.

Reporting Requirements

    See Sec.  743.1 of the EAR for reporting requirements for
exports under License Exceptions, and Validated End-User
authorizations.

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

TSR: Yes, except for the following:

    (1) Items controlled for MT reasons;
    (2) ``Technology'' for commodities controlled by 6A002, 6A004.e,
or 6A008.j.1;
    (3) ``Technology'' for 6A003 cameras, unless for ``technology''
for the integration of 6A003 cameras into camera systems ``specially
designed'' for civil automotive applications ; or
    (4) Exports or reexports to destinations outside of those
countries listed in Country Group A:5 (See Supplement No. 1 to part
740 of the EAR) of ``technology'' for the ``production'' of the
following: (a) Items controlled by 6A001.a.1.b, 6A001.a.1.e,
6A001.a.2.a.1, 6A001.a.2.a.2, 6A001.a.2.a.3, 6A001.a.2.a.5,
6A001.a.2.a.6, 6A001.a.2.b, 6A004.c, 6A004.d, 6A006.a.2, 6A006.c.1,
6A006.d, 6A006.e, 6A008.d, 6A008.h, 6A008.k, or 6B008; and (b) Items
controlled by 6A001.a.2.c or 6A001.a.2.f when ``specially designed''
for real time applications.

Special Conditions for STA

STA: License Exception STA may not be used to ship or transmit
``technology'' according to the General Technology Note for the
``production'' of equipment specified in the STA exclusion
paragraphs found in the License Exception sections of by ECCNs
6A001, 6A002, 6A003, 6A004, 6A006, 6A008, or 6B008 to any of the
destinations listed in Country Group A:6 (See Supplement No.1 to
part 740 of the EAR).

List of Items Controlled

Related Controls: (1) Technical data directly related to satellites
and all other items described in USML Category XV are subject to the
ITAR under USML Category XV(f). (2) Technical data directly related
to laser systems, infrared imaging systems, and all other items
described in USML Category XII are subject to the ITAR under USML
Category XII(f). (3) Technical data directly related to read-out
integrated circuits described in USML Categories XII(e) or XV(e)(3)
is subject to the ITAR under USML Categories XII(f) or XV(f),
respectively. (4) See also 6E992.
Related Definitions: N/A
Items:

    The list of items controlled is contained in the ECCN heading.

0
32. In Supplement No. 1 to part 774, Category 7, ECCN 7A002 is revised
to read as follows:

7A002 Gyros or Angular Rate Sensors, Having any of the Following,
and ``Specially Designed'' ``Components'' Therefor.

License Requirements

Reason for Control: NS, MT, AT

                                            Country chart (see Supp. No.
                Control(s)                         1 to part 738)

NS applies to entire entry................  NS Column 1
MT applies to commodities that meet or      MT Column 1
 exceed the parameters of 7A102.
AT applies to entire entry................  AT Column 1

    License Requirement Note: For the purpose of MT controls only,
the term `stability' is defined as a measure of the ability of a
specific mechanism or performance coefficient to remain invariant
when continuously exposed to a fixed operating condition. (This
definition does not refer to dynamic or servo stability.) (IEEE STD
528-2001 paragraph 2.247)

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: N/A
GBS: N/A

List of Items Controlled

Related Controls: (1) See USML Category XII(e) for gyros or angular
rate sensors subject to the ITAR. (2) See also ECCNs 7A102, 7A611,
and 7A994. (3) For angular or rotational accelerometers, see ECCN
7A001.b.
Related Definitions: N/A
Items:
    a. Specified to function at linear acceleration levels less than
or equal to 100 g and having any of the following:
    a.1. An angular rate range of less than 500 degrees per second
and having any of the following:
    a.1.a. A ``bias'' ``stability'' of less (better) than 0.5 degree
per hour, when measured in a 1 g environment over a period of one
month, and with respect to a fixed calibration value; or
    a.1.b. An ``angle random walk'' of less (better) than or equal
to 0.0035 degree per square root hour; or

    Note: 7A002.a.1.b does not control ``spinning mass gyros''.

    a.2. An angular rate range greater than or equal to 500 degrees
per second and having any of the following:
    a.2.a. A ``bias'' ``stability'' of less (better) than 4 degrees
per hour, when measured in a 1 g environment over a period of three
minutes, and with respect to a fixed calibration value; or
    a.2.b. An ``angle random walk'' of less (better) than or equal
to 0.1 degree per square root hour; or

    Note: 7A002.a.2.b does not apply to ``spinning mass gyros''.

    b. Specified to function at linear acceleration levels exceeding
100 g.

0
33. In Supplement No. 1 to part 774, Category 7, ECCN 7A003 is revised
to read as follows:

7A003 `Inertial Measurement Equipment or Systems', Having any of the
Following.

License Requirements

Reason for Control: NS, MT, AT

                                            Country chart (see Supp. No.
                Control(s)                         1 to part 738)

NS applies to entire entry................  NS Column 1
MT applies to commodities in 7A003.d that   MT Column 1
 meet or exceed the parameters of 7A103.
AT applies to entire entry................  AT Column 1

List Based License Exceptions (See Part 740 for a Description of All
License Exceptions)

LVS: N/A
GBS: N/A

List of Items Controlled

Related Controls: (1) See also ECCNs 7A103, 7A611, and 7A994. (2)
See USML Category XII(d) for guidance or navigation systems subject
to the ITAR.
Related Definitions: N/A
Items:

    Note 1: `Inertial measurement equipment or systems' incorporate
accelerometers or gyroscopes to measure changes in velocity and
orientation in order to determine or maintain heading or position
without requiring an external reference once aligned. `Inertial
measurement equipment or systems' include:

    --Attitude and Heading Reference Systems (AHRSs);
    --Gyrocompasses;
    --Inertial Measurement Units (IMUs);
    --Inertial Navigation Systems (INSs);
    --Inertial Reference Systems (IRSs);
    --Inertial Reference Units (IRUs).

    Note 2: 7A003 does not apply to `inertial measurement equipment
or systems' which are certified for use on ``civil aircraft'' by
civil aviation authorities of one or more Wassenaar Arrangement
Participating States, see Supplement No. 1 to part 743 of the EAR.

    Technical Note: `Positional aiding references' independently
provide position, and include:

    a. ``Satellite navigation system'';
    b. ''Data-Based Referenced Navigation'' (``DBRN'').
    a. Designed for ``aircraft'', land vehicles or vessels,
providing position without the use of `positional aiding
references', and having any of the following ``accuracies''
subsequent to normal alignment:
    a.1. 0.8 nautical miles per hour (nm/hr) ``Circular Error
Probable'' (``CEP'') rate or less (better);
    a.2. 0.5% distanced travelled ``CEP'' or less (better); or
    a.3. Total drift of 1 nautical mile ``CEP'' or less (better) in
a 24 hr period;

    Technical Note: The performance parameters in 7A003.a.1,
7A003.a.2 and 7A003.a.3 typically apply to `inertia measurement
equipment or systems' designed for ``aircraft'', vehicles and
vessels, respectively. These parameters result from the utilization
of specialized non-positional aiding references (e.g., altimeter,
odometer, velocity log). As a consequence, the specified performance
values cannot be readily

converted between these parameters. Equipment designed for multiple
platforms are evaluated against each applicable entry 7A003.a.1,
7A003.a.2, or 7A003.a.3.

    b. Designed for ``aircraft'', land vehicles or vessels, with an
embedded `positional aiding reference' and providing position after
loss of all `positional aiding references' for a period of up to 4
minutes, having an ``accuracy'' of less (better) than 10 meters
``CEP'';

    Technical Note: 7A003.b refers to systems in which `inertial
measurement equipment or systems' and other independent `positional
aiding references' are built into a single unit (i.e., embedded) in
order to achieve improved performance.

    c. Designed for ``aircraft'', land vehicles or vessels,
providing heading or True North determination and having any of the
following:
    c.1. A maximum operating angular rate less (lower) than 500 deg/
s and a heading ``accuracy'' without the use of `positional aiding
references' equal to or less (better) than 0.07 deg sec (Lat)
(equivalent to 6 arc minutes rms at 45 degrees latitude); or
    c.2. A maximum operating angular rate equal to or greater
(higher) than 500 deg/s and a heading ``accuracy'' without the use
of `positional aiding references' equal to or less (better) than 0.2