This is Think Tech Hawaii, Community Matters here. Okay, we're back. We're live here on a human Wednesday afternoon with Energy in America. And we are joined, as we usually are, by Lou Pulirisi. He is the CEO of E-Pring, which is an energy policy think tank in Washington, D.C. And we are joined by him even in the week between Christmas and New Year's, a special time. Thank you for joining us, Lou. Can you hear me, Jay? Let's get started. Yes, I can. It's nice to see your smile and face.  I have, yeah. I've been overindulging probably. That's it. So when I asked you... It's the entire family here, so it's a big gets a lot of work. That's wonderful. It's all about family this time of year. In fact, I would say the country is all about family. Family is the best part of the United States. It may be the biggest part of the world. Exactly. So I asked you what we could talk about here in the call it the bridge week. The one notable thing that sort of occupies all the oxygen is the tax reform, I say reform, the tax reform bill that just passed and was signed. So the Republicans and Trump have had a success in that regard. And the question is what are the implications, both short term and long term? Because they may not... The implication short term may be that we all get a few bucks, you know, we leave taxes. The long term is what about the macroeconomics? Before we get started, I meant to point out to you that the week before last I was in Frankfurt, Germany, chairing a European LNG conference. And the dynamics on that, the ongoing struggle between the Eastern Europeans and the old traditional Europeans, particularly as it relates to Russia was very interesting. And as you know, the Russians have proposed to build with the Germans a pipeline directly from Russia to Germany to bring natural gas from Russia, bypassing the Ukraine. And this is an issue that's going to continue for the next few months throughout the next year. And it's a topic we probably should revisit at some point. Because one of the alternatives to this Russian gas is United States LNG. And this was a big feature at this event. And there was also a great deal of, I would say, concern among the Germans about the political developments in the U.S. I found that also very interesting. Well, they're probably also concerned about the political developments in Russia with respect to Ukraine. But let me ask you, what are the geopolitical considerations of bypassing Ukraine? Why would Russia want to do that? What does it mean for LNG? So I think that there was a debate whether this additional pipeline capacity is really needed or not. And I think the Russians and some of the Germans, the sponsors of the project, were arguing, yes, we need more capacity to bring additional gas from Russia because European production is declining. But I would say the Ukrainians argue, no, the Russians are doing this just to put the squeeze on Ukraine. That if they can bypass us, they know that they don't need us to transport their gas. And it will then give them a free hand for all kinds of nasty shenanigans. So I think that is an issue. And the U.S., by the way, today still supports maintaining the Ukrainian transit. And the U.S. is more or less opposed to Nord Stream. And within the context, I can say the Europeans should not have too high a reliance upon a single supplier. They don't try to single out the Russians. But anyway, I just wanted to get that started on the table. Yeah, sure. Well, I think that's a thread we should cover. But just to get the foundational points, if they build the pipeline in a way that avoids going through Ukraine, where do they build it north or south? They go over the sea. They go through the Baltic Ocean and the Baltic Sea. So they do it. And they need to get landing facilities like in Vilnius. The Swedes have said, no, you can't land the pipeline in Sweden. So they have to use an alternative route. And I think the Lithuanians have also told them they cannot land it in Lithuania. So then they are forced to move the gas entirely through an undersea route. Why would a country like Sweden or Lithuania say no? Are they opposed to the Russian end of it or the German end? They are opposed to the Russian. Basically, they don't trust. They don't want to be holding to the Russians on anything. They don't want a Russian pipeline on their territory. They want to have political and defense reasons. This is really interesting. It's the intersection between energy and geopolitics. Yes, it's a topic which we can in a few weeks. I'm going to have some visits with the State Department next week. And I'll be able to talk about it more extensively. Okay. We're ready to talk about the tax reform act now? Let's talk a little about the tax reform because I guess the Republicans said it was going to be the best thing since sliced bread and Nancy Pelosi said it was probably the end of the world as we know it. Okay, on again. And so I think it's important to sort of not get too excited about this stuff. When the government does something, it's really never really as big as you think. I agree with that. And I think the first thing to start with is if you look at the development of the United States economy after the financial collapse of 2008, whatever it was, and you look at that, we have a period of extremely low growth historically by most recoveries from a major recession or major event. Now, recoveries from financial crises usually do take longer. But one characteristic of the U.S. recovery wasn't that consumption spending, consumer spending was so low. It was actually pretty good. It was that the historic rate of direct business investment compared to previous recovery periods was substantially lower and stayed low throughout the period. And that this low rate of investment recovery was attributed to lots of things. One that just takes a long time to work out the, let's say, the adverse effects of a financial crisis as opposed to a traditional recession. Second, the number of projects that justified investment seemed to be limited. And some would argue that there were two features there. One was that the regulatory state had grown to such a point that it was very difficult to risk capital in a lot of areas. And the second point was that U.S. corporations, because they were paying this high tax rate versus what their competitors were paying in Europe, made them less competitive. And hence, you get these inversions where essentially a foreign company buys a U.S. company and moves the headquarters to Ireland or somewhere, right? And I think the third part is the U.S. had a unitized worldwide tax treatment. So you were taxed on worldwide funds. Everybody else in the world only is taxed on those revenues and profits they generate in their own country. And so, even President Obama had said, well, I think the rates do high, maybe we should go to 28%, right? And, of course, this whole political debate is caught up in a lot of other issues, some of them on the unpleasantness of the way American politics operates now. We talked about that a few weeks ago. And I think that a couple of issues to think about, before we get to the tax treatment of you and I, like working steps, the treatment of the corporations is quite an interesting and important breakthrough. And I think in the end, people are going to embrace this. One is, we're moving away from a unified tax treatment to a territorial one. That means that you're only going to be taxed on the revenue that you make in the U.S., that when you repatriate revenue back to the U.S., you will not pay a higher tax rate than generally, than in most states of the world. And so, you now have incentive to bring it back here. Combined with the lower tax rate, the thinking goes, behind with the lower tax rate, and the fact that you have this massive or important regulatory reform effort, we should get more direct investment in the United States than we would without the tax. So that is basically what was driving the economic theory of the economic practicalities behind the tax reform. It is extremely useful tax, a beneficial tax for major integrated oil companies headquartered in the U.S. and is likely to completely stop the inversion process. So you will see companies like ExxonMobil, Chevron, the Shale producers. I think they all believe that this is a huge benefit to the domestic oil and gas industry. Well, how would that work then? That would make it cheaper for them. They would have to pay a lower tax rate. And they would be able to, there are other aspects of the project. The direct expensing of investment, particularly in the early years. You don't have to amortize investment over a longer period of time. But a lot of features of it should induce a higher rate of direct investment in the U.S. And one of the problems we've had is that our growth rate in the country, now I don't know what it is for the state of Hawaii, but for the United States as a whole, we've stayed around what we call the terrible twos, right? And many economists have argued, okay, well, we're 2% because population is getting older and people are retiring, they're sitting on the rear-ends, they really don't want to do any work. And I think there's a debate about that. There's a lot of people who are not in the workforce, who could come out of the so-called U4 category. People who are not looking for work anymore. If the wage rates rise, they'll come out. So this tax program will be a success if several things happen. If we have a higher rate of economic growth. And if we just go from 1.9 to 2.5%, that is huge. Second, if we start to see rising wage rates, these are all the things to look. So my view is the tax package that's really important was the way we treated the corporation. And I also think- That's where the big money is. That's where the money is. But remember, corporate income taxes only generate today, even before the tax, about 10% of the revenues to the federal budget. So they have a- You and I are the ones that fund the federal budget. Yes, but that's troubling in the sense that, you know, you can say it's a- It has been a high rate. And it'll be substantially lower. But the fact is the multinationals have a lot of tax breaks, you know, that are not directly related to the rate. Deductions and amortizations and the like, credits, whatnot. I agree. And one of the problems- So they don't pay that much anyway. One of the problems with a very high tax rate, our corporate tax rate was one of the highest in the world, is the corporations go to Congress and say, hey, you're killing me with this tax rate. I need a special deduction if I invest in high tech this. Or if I buy a super duper windfall. Or if I- And the Congress, oh, I agree with you. It's bad. You're from my state. I'm going to try to get you a break. And then those breaks start to pile up through the whole system. And so people argue, look, the effective rate is really not 35%. It's something else. But that's not the point. It's something else because Congress passed all these special favors, which are distorting decisions in the marketplace. Well, are those special favors going away, Lou? Are those special favors going away now? Yes, they are going away. Many of them are going away. Some remained in the bill like the final bill left the wind and solar credits, which people don't understand, untouched. But they still phase out in four years. Well, I want to take a look and synergize all of that right after this break, Lou. Sure. I'd like to ask you specifically how are renewables going to do? You know, because there's a lot of policy around that right after this break. We'll be right back with Lou. This is Think Tech Hawaii, raising public awareness. Good afternoon. My name is Howard Wig. I am the proud host of Code Green, a program on Think Tech Hawaii. We show at 3 o'clock in the afternoon every other Monday. My guests are specialists from here and the mainland on energy efficiency, which means you do more and less electricity, and you're generally safer and more comfortable while you're keeping dollars in your pocket. Okay, we're back at a given Wednesday here in Hawai'ine, with Lou Pulirisi. He's in Washington, D.C. He's the CEO of EPRINC, which is an energy policy research think tank. And we're having a discussion about the tax reform bill and how it affects not only the multinationals but the energy companies, not only the fossil fuel companies but the renewable companies. So that's my question for you now, Lou. How is it going to affect the development of renewable energy in this country? So the existing tax credits for both solar and wind and the federal payment for electric cars were restored during the conference debate when the two houses met, and now are part of the law. So there was no change to the way we were treating a wind which includes a production tax credit. In other words, when you bid into the grid with your wind, you still get somewhere between 1.8 and 2.0 megawatt hour. I'm not sure exactly the number. You continue to get the solar credits, and the direct payment for buying an electric car from the federal side stays into the bill. Does that expire at any point, or is that just ongoing? Yes, it has already. Because both the solar and wind guys have gone to the Congress so many times, the Congress said, look, the deal they put together, okay, this is it. This is the last time we're going to get these freebies from the government. So over time, these credits are going to phase out completely, and I believe by 2020 to 2022, they completely disappear. But for now, we still have them. Still, there's been no change in the treatment of it. And what about the electric car credit? The electric car, the federal electric car credit remains part of U.S. law. And how long will that last? That lasts until any manufacturer produces over 200,000 units. Once a manufacturer exceeds 200,000 units of an electric vehicle, that manufacturer loses the credit. Ah, interesting. So there's sort of a negative incentive there. Well, if you get up to 200,000, how long do you want the government to pay these guys? You don't have to ask yourself. They're not paying any road taxes. That's economies of scale. They're figuring that it must be cheaper to make 200,000 of them. Once you have a share of the market, the government pulls the plug. So what does this mean? I mean, if you extend all of that out into the future, I guess it's only a couple of years, but if you extend that out into the future, what's going to happen to renewable energy differently than what's been happening now? So I think the basic question is, we still have debate taking place in the Federal Energy Regulatory Commission on so-called appropriate treatment of reliable power. Now, reliable power would be, in Secretary Perry's view, nuclear or coal. But the question is, how reliable are resilience? Resilient really is coal if you get a snowstorm and the coal is frozen or if there's a big flood and it's all wet. So the FERC is working through this issue, which is part of a broader problem. They're going to have a technical conference and a proposed rulemaking. And for this issue, the real issue is, what is the true cost of bringing wind and solar and renewables to the grid? We don't really know yet what that cost is. Now, to the extent that these regional transmission organizations, these organizations which regulate the grid and many power plants in a large region, to the extent they say, okay, you need to bid in next year, whatever, a certain amount of megawatts to be available to our grid. You need to put a price and we're going to put you in the queue, right? And I think that when people were bidding, when wind and solar were bidding, intermittent power, utilities didn't have what was hard to do it, right? So what they're saying now is, look, when you bid, you have to bid firm power.  You have to then say, okay, I'm going to bid firm power, but then I have to get a contract with a gas producer or a coal producer or a nuclear producer. And so I'm going to bundle my bid because when I send firm power to the grid, I have to show the regional transmission organization, yes, I can guarantee you that in August next year when you ask for so much, I will deliver power to the grid. So sort of supplemental source. Yeah, but you're responsible as the wind producer for making sure your bid is firm and then you wrap that up and put a number into it. I still think there's a debate, a big debate that's going to play out in the next couple of years, which is, well, what is the system risk or the system cost from intermittent and unpredictable sources of renewable power? So-called variable renewable energy. And that is what you're going to see play out over the next year, how to deal with that. And I do think one of the issues a lot of utilities are struggling with is what are consumers willing to pay in order to keep the probability of dropping load very, very low? All right. I know what my neighbor's willing to pay because he bought a $25,000 generator and stuck it in his backyard. So he's willing to pay a lot, right? Well, what about storage? I mean, we have an issue here in Hawaii, not resolved, maybe to get resolved this year as to whether we will allow local tax credit for storage, for batteries, because that's all the rage and I'm sure it is on the mainland too. If you want to have a flat curve, so to speak, if you want to have it dispatchable at all times, storage really helps on generation through renewables. So what about the federal government? What kind of credits are available now and does this bill change the arrangement for credits for storage for batteries? So I do not believe the Department of Energy has a big research program on storage. So there's a big effort on storage and there's continue to be spending money on it. I don't think there's any specific subsidy or tax credit for storage, however when you bid if you're a wind power generator and you've gotten married to a storage guy, and that's a cheaper route than getting an option contract with a gas generator, some oscillating generator, then you can bid that into the grid. There's a big penalty for bidding power into the grid and then not being there when it's a call to bond. It should be. It should be. You've got to comply. That would be interesting to see how the Hawaiians do with this. Well, yeah, I guess the question really is whether they're going to have any help from the federal government on it. But it doesn't sound like that. There might be some grant money at DOE for this. I wouldn't necessarily count it out. Well, let's go to that for a moment. The administration has not been friendly to the environment. We've seen that in many ways. I'd like your thoughts about whether it has been friendly to renewables, regardless of the law, because you can do so much on a regulatory basis. Sir, I would say the administration hasn't done any you could argue that the only major issue which is somewhat less favorable to renewables, but maybe even less favorable to gas has been the loan guarantee for the nuclear power plants in Georgia. They've put a big Department of Energy loan guarantee to make sure these few nuclear power plants are building and going forward. And they have engaged in withdrawal from the so-called clean power plan. The clean power plan is an extremely complicated program in which the states are still free to pursue their own renewable portfolio standards and other programs. So I think there's a my view as a person that cares about what things cost and efficiency. I'm not too concerned about getting rid of the clean power plan. I don't think it makes sense that the grid is unstable was struggling against natural gas. I do think we should put some brain power in making sure the grid is resilient and reliable that we don't want the wind and solar to propagate at a pace that the grid is unstable. I don't think we want that. I don't think even the environmentalists want that. Because if you start dropping load that's going to be a death nail to the renewables. They will not put off a losing electricity when they want to watch HBO. No one's doing that to keep that in mind. Well you know one other thing to cover before we run out of time is the whole thing about the effect of this on the initiative for LNG. You mentioned how important it is in Europe. We went to a conference in Japan a few weeks ago and discussed LNG from the U.S. into Asia. What does this legislation affect if at all? I think the two things is that the more favorable treatment direct investment particularly the expensive provisions and the territorial treatment and the lower tax rate is going to make it easier for LNG investment to take place in the U.S. It's going to make it more profitable. We are in the process now of a second of our sister think tank in Japan Institute of Energy Economics in Japan I'm going over there in February to work out the details to look at what needs to take place for capacity building in the Pacific for the Southeast Asia mostly but also we're going to do a deep dive on both India and China and I don't know if you've noticed in the last few months everyone thought we had too much LNG in the Pacific all of a sudden China and India started ramping up their LNG purchases and now LNG prices are rising very rapidly in the Pacific This is not a surprise is it? It's not a surprise because the pressure people think about greenhouse gas emissions but that's not what's driving this what's driving this is political concerns over local air pollution if you can't breathe the air in Beijing even if it's an autocratic society eventually you get nervous that the people will complain and they are complaining I have to add just a footnote to that is that we have our correspondent from Beijing tells us that this year for a lot of good technology that the Chinese have installed in Beijing the air is better so whatever they're doing they're actually addressing it I think it is getting better and more criteria but they have a long way to go One other thing is to assimilate all of this so we have potentially a better investment environment for LNG we have these opportunities east and west we have an initiative and a supply that really bespeaks a kind of LNG prosperity going forward but the question I put to you was where is the investment going to come from because now multinationals are more fluid perhaps especially if you buy into the notion that it's going to be one country at a time the U.S. is not going to tax income earned in other countries that's not yet but that may be coming so where is the investment going to come from to build out the LNG facilities to explore for it to connect it up to make it possible to export it hither and yonder I think there is historically the banks provided liquidity you know banks say we don't provide risk capital we provide liquidity you take the risk but I think now you're going to see new mechanisms to allow even the purchasers of LNG to participate directly in the long term play so that's something we could talk about sometime because as the LNG market begins to look more like the oil market with very short term trading and less concern about a long term contracts that you're going to need new ways to finance it and those ways are coming though they're coming historically the oil and gas companies they finance things directly out of retainers am I right to say that some of this investment capital will come from offshore that multinationals will be more fluid some will come from Australia some will come from Europe and possibly some will come from China if the US government allows them to do that so much to discuss I'm so looking forward to 2018 with you to find out on all these things in the meantime happy new year looking forward to our next rendezvous see you in two weeks see you in two weeks


Today, we will look at two important characteristics in the context of nano transistor. One is what is called narrow width effect. The other important aspect is what we call sub threshold conduction and this in turn will lead us to the discussion of the issue of static power in today's state of the art CMOS technology. It has really surfaced as one of the very important challenges to deal with right. In the last lecture, we have looked at short channel effect that is when you decrease the channel length of the transistor what happens to the threshold voltage of the transistor. So, first let us start with the discussion today that is narrow width effect. So, when we are talking of width of the transistor, let me just refresh you with the top view of a transistor as you may recollect. We have seen in one of the earlier lecture, we call this as an active area and typically whenever you have two rectangles one called active and the other one called gate in top view which crisscross each other that indicates a transistor. So, now in top view, this is a transistor. You have a gate here and you know active area and in turn you see this side of the transistor is source, this side of the transistor is drain and this distance is what we have been calling as a channel length which is essentially the distance between source and drain junctions. Along this direction, this is our channel width right. Now, last lecture we saw the transistor cross section by essentially taking cross section in this direction right. When I do a cross section here and I take a side view as you know we essentially see something like this right here I have the source junction and here I have this drain junction right and on top I have gate insulator and this is my gate electrode right and looking from the top what you see is essentially this gate electrode which is sort of crossing this active area. The active area then includes in this direction the source channel and the drain region all these put together are active area. When we talk of integrated circuits with millions of transistor, two neighboring transistors are always isolated from one another right. It used to be in olden days junction isolation, but junction isolation is just not feasible and we have been doing oxide isolation for last several generations of the technology. In other words, you have this transistor and you have a neighboring transistor let us say out here I am just going to sketch only active area I am not going to sketch the field area and similarly in this direction also you may have another transistor right which will be going like this. And this transistor one transistor one transistor two and transistor three have to be isolated if they do not have to talk to each other there has to be perfect electrical isolation. So, in other words where all these are called active areas and wherever you do not have these active rectangles rest of the area is called field area and in this field area you essentially have grown silicon oxide or deposited silicon oxide to create isolation. In other words if I were to you know look in this direction right I have silicon right underneath this active region, but underneath these regions I will initially see an oxide if I see the you know depth profiling and then later on I will see silicon coming in I will draw that for you in a minute. So, in other words if I were to take a cross section along this direction here and look at it from the side because I have taken a cross section and I am looking at it from this side. So, then what you will see is the following right I will keep that out here. So, you have that for your reference. So, I am taking a cross section and looking at from the side view. So, what you have then is this is your active area that corresponds to your width of the transistor and here immediately under this silicon oxide remember this is silicon oxide this is the same silicon oxide which is this gate oxide immediately under that you have this silicon and this is the edge of your active area this is the edge of the active area which essentially corresponds to this area correct edge of the active rectangle that you have. So, from here on if you see here what you will essentially see is something like this is also silicon oxide this whole thing is silicon oxide and this is also silicon oxide you see, but this is what is called a gate oxide of the transistor and this is a field oxide of the transistor and the field oxide is typically very thick. There by if there is a transistor here another transistor this field will extend like this you see this is what we call a field region and when there is a next transistor that comes in you again have a thin oxide and next transistor which you know we looked at in this direction this is the next transistor. So, between the edge of this active and edge of this active you will have a thick field oxide as is indicated out here and you know this is what is called isolation. Now, you know in CMOS technologies there are two different ways of doing isolation you know we will come to that in a minute, but the point I am trying to raise right now is you have this isolation oxide here as well S I O 2 and this is your gate oxide a very thin S I O 2 and remember you know what you see on top here is this polysilicon correct, because you see this polysilicon red area rectangle goes beyond this active edge right. This is the active edge it is going to go beyond this active edge by this amount that is why I have shown this polysilicon going on top of the field oxide as well. So, this is what you see right in the in the side view when I take a cross section along the drain along the width axis of the transistor. Now, you see there is something interesting that comes up typically again when we apply a voltage right we have to create a depletion and then we have to create an inversion right. Earlier we essentially said that whenever we apply a voltage you will have a depletion region created in this area and then of course this region will be inverted and that is when you have a inversion and current will flow when the transistor is on, but you see when I apply a voltage here to this gate V G this V G will set up certain charge on gate our earlier assumption was that that charge was balanced by an equal and opposite charge which is found only in this area. But in reality you will have what are called fringing fields here correct at this edge even though that oxide is little bit thicker and hence you will also start creating the depletion region here right. In other words you see whenever I apply a voltage on the gate the gate not only have to deplete this region, but it will also have to deplete this region before you start talking about inversion. In other words gate has to do extra effort as opposed to what we had in a very simplistic model right which is just this rectangle this is exactly opposite of charge sharing effect that was coming in short channel effect because in short channel effect source and drain charge sharing was helping you to really invert the transistor because part of the depletion which was taken by source and drain regions. But here gate will have to take care of additional depletion area right. So, what would you expect you would expect that V T should start increasing because of this effect. However, again when the width is very large this small area which is essentially due to the fringing field is so small that it is just insignificant. But when width is shrinking when width is becoming comparable to this area which is being depleted because of the gate. Now gate is doing extra effort that is visible externally and hence you need to apply more voltage to invert the transistor. In other words if you were to now sketch your V T as a function of channel width it should be flat right as per our simple one dimensional derived equation. But when the channel width decreases to the order of 500 nanometer 100 nanometer then you start seeing an increase in V T. So, V T increases and this is what we call narrow width effect. This effect shows up only when the width is very narrow very narrow in this regime not in this regime when the width of transistor is very wide this area is insignificant compared to the actual active area of the transistor. So, this is a very important point that you need to also remember when we talk of very small feature sizes of the transistor. Now narrow width effect is a very strong function of how we make this oxide how we make this field area you see because this field essentially depends on you know this oxide thickness. You just imagine two cases in one case where this oxide thickness is incrementally smaller than this gate oxide then this fringing field is as strong as this vertical field. In another case where it is a very thick oxide then that fringing field is just negligible correct. And you would imagine obviously that the structure of this isolation will have a very very strong impact on how this narrow width effect will look whether it looks like this whether it looks like this or almost flat it does not depend on width at all. So, in this context I just want to sort of highlight that when we talk of isolation technology there are two kinds of isolations that we talk about one is what is called abbreviated as low course this stands for local oxidation of silicon. This was a technology isolation technology that was used from the you know early days of CMOS you know way back in 70s all the way to I would say mid 90s till about 0.35 micrometer generation or 350 nanometer generation. CMOS in all these technologies we used to have locus isolation, but all modern technologies use what is called trench isolation. And it turns out narrow width effect is very severe very bad in locus isolation and narrow width effect is negligible in these technologies. Where we are talking of less than 0.35 micron now you can appreciate why we moved from locus to trench isolation right. If narrow width effect starts becoming very very strong it is very difficult to control the threshold voltage of the transistor right. So, we want to minimize the narrow width effect and that is why we went to trench isolation technology. So, what is different between these technologies is the following in locus isolation that is number one which I showed earlier your isolation area looks like this. This is what we call active area which is where your transistor width is defined lithographically the by printing and this is your field area. Typically you know if this oxide thickness is of the order of let us say 10 nanometer which is about 100 angstroms this could be as large as 500 nanometer which is 5000 angstrom you know almost 50 times more right. And that is what is going to give you the isolation from one transistor to the neighboring transistor, but very interestingly when we try to actually define this field region by this process we always end up with this kind of a transition region. In fact sometimes in locus technology you know nomenclature this is actually called birds beak because when you look at it it looks like a birds beak coming in here. This birds beak is a major problem in locus technology right you know no matter what you will have this effect. Whereas if you have a trench isolation technology trench isolation would look like this. If this is your silicon and if this is your active this is your silicon oxide you actually have what is called a trench dug in silicon which is completely filled with oxide this whole thing is filled with oxide. And this is why it is called trench isolation this is your active area which is your width and outside the width is this region here. If you have very thick oxide right at the edge of this active your fringing field here will be very very small right as a result of that you will not see much narrow width effect. Whereas although you had thicker oxide here right where it matters you know as far as narrow width effect is concerned it is really thin the oxide is very thin and hence your fringing fields can be very strong here. Whereas here your fringing is not very strong it can be neglected for all practical purposes. And that is why your trench isolation technology is what is used for all technologies less than 0.35 micron it minimizes the narrow width effect it minimizes this birds beak problem as well. We will not really go into the details of how one would actually get this structure because that is really the details of the semiconductor processing right. We will not really talk so much about this in this part of the course we will only focus mostly on device physics part. But there are ways to do that for example as the name suggest here local oxidation of silicon meaning oxidation can be done locally in silicon wafer by masking certain regions of silicon wafer right. So, you mask the active region of the silicon wafer by a dense material such as silicon nitride. So, oxygen does not diffuse through silicon nitride and the rest of the area is exposed and oxidation takes place in those area that is conversion of the silicon into silicon oxide. Whereas in the active region since they were protected by silicon nitride they do not get converted into silicon oxide. And that is how selectively I can convert part of the region into a thick field oxide region rest of the region is what I use to build a transistor. Similarly, there are ways to build a trench isolation technology we will not really go into the details. So, that completes the first target that we had for today's lecture the what is meant by narrow width effect. The fact that as I start miniaturizing the width of the transistor I need to start considering the fringing fields which would be there typically you know at the edge of the gate along the width direction specifically where gate electrode is going on top right beyond the active area. And because of that your threshold voltage will have a increasing trend then that is narrow width effect by going to trench isolation technology as opposed to locus isolation technology we have been able to minimize the narrow width effect. Now let us go to another very important aspect that we wanted to discuss for today's lecture and that is sub threshold conduction. This essentially means this is a condition when my gate voltage is less than threshold voltage right that is you have a transistor and this is your V G gate electrode and these are your source and drain junctions. I apply a drain voltage V D S and we say that typically if we look at I D S drain to source current as a function of V G S this being an N channel transistor we say it would look something like this especially for when V D S is small that is when the transistor is in linear region otherwise the transistor is in saturation region. Now this point here is what we call threshold voltage we say that I D S is equal to 0 for V G S less than V T H correct then I D S will be non-zero right for V G S greater than V T H and then it could either be in linear region or in saturation region depending on what is your drain value voltage value that you have. But what we are really now interested is this region what happens when V G is less than V T H is current indeed 0 or there is a non-zero current if there is a non-zero current what is the basis of that non-zero current. Remember this is a P type substrate when I have reached V G is equal to V T H that is when I have created a channel here correct and when there is a channel you have current which is a drift current correct the current flows because there are lots of carriers and you have applied drain voltage that sets up electric field and hence you have a current flowing to the transistor. But when I have V G S less than V T H I do not have a channel really in other words in this region N is small and hence your drift current also fields are small your drift current can be ignored really. However N is small but non-zero you see N cannot be 0 even when it is P type silicon which is doped with 10 to the 15 acceptor impurities my N here is still 10 to the 5 right which is a minority carrier concentration. Now we are talking of a situation where I have applied a voltage here non-zero voltage and applied ground potential here. Now I am asking the question there is no drift current but could there be a diffusion current if there is a concentration gradient of electrons from source to the drain we could certainly expect diffusion current to flow through right because if you recall the diffusion current density is given by where you Q is the electron charge d N is the diffusivity of electrons of course d N as you know is given by d N by mu N is K T over Q the so called Einstein's relation where K T over Q is the thermal voltage mu N is the mobility right d N is essentially diffusivity of the carriers. So, this is a diffusion current the diffusion current exist whenever there is a concentration gradient N can be small but d N by d x can be there. So, we need to really worry about what is d N by d x. So, let us really find out what is d N by d x now. Now if drain voltage were to be 0 source voltage were to be 0 then there would be absolutely no gradient in electron concentration. The electron concentration gradient will come in only when I create an asymmetry by applying a unequal voltage on the source and drain terminal as is the case here 0 and v d s which is not equal to 0. In fact we will see little later that the electron concentration here will be more compared to the electron concentration here. In fact we will derive the expression for the electron concentration but qualitatively you can think about this in the following manner. This is a reverse bias N plus p junction and this is a reverse bias N plus p junction right. But here I have a non zero reverse voltage right. If you recall your p N junction theory there is something called a law of a junction at the edge of the depletion region your carrier concentration is really governed by what is the reverse bias voltage that you are applying. In other words if you recall your N in general is given by N p naught times e to the whatever reverse voltage that q v r by k t in a diode in this is in a simple diode right. The minority carrier concentration gets modulated based on what is the applied reverse voltage. Now let us actually come from the other perspective that we have been talking about right. From the MOS theory right if you recall we can write electron concentration in general as e to the q psi s by k t where psi s is what we call surface potential. And in fact we have seen that when I reach inversion psi s is equal to 2 phi b in a p type silicon the you know surface potential to begin with psi s when you do not have any applied voltage it is a flat band condition. Your electron concentration will be much lower than the whole concentration. But as you start applying the forward bias voltage you know your psi s starts increasing right and eventually it becomes equal to 2 phi b. And that is when we have inversion condition right you remember that right. And essentially what you know we are talking about now when we are talking about this diffusion current d n by d x is to really find out n at source region I will call it n at s minus n at drain divided by the distance between source and drain which is the channel length. So, if you can find out you know what is the electron concentration at the source and electron concentration at the drain that in turn will you know give me what is you know your diffusion current because from there you can get the carrier gradient right. So, here we can essentially write the electron concentration at the source side as you know something like this right n p 0 e to the q psi s by k t right with an assumption here that under flat band condition psi s is equal to 0 that is how we set up the convention for measuring the surface potential right. You know flat band condition for that is psi s is equal to 0. In fact, when psi s is equal to 0 remember the bands are flat in silicon and as a result of that your whole concentration is really n p naught n p naught stands for I mean electron concentration electron concentration in p side under thermal equilibrium condition right that is not at all altered. Now as you start applying more and more gate voltage you know this psi s starts increasing eventually psi s becomes 2 phi b when psi s becomes phi b n p n 0 is equal to n i correct because that is when your intrinsic level will bend and come to the Fermi level location because that is a band bending of phi b and when psi s is equal to 2 phi b intrinsic level will fall below the Fermi level and that is when it has become n type ok. So, that is when you go from n p naught all the way to the carrier concentration which is equal to whole density in a p type doped semiconductor right. So, that is how we have this carrier concentration. On the other hand at the drain junction because my drain voltage is non-zero your electron concentration would actually go down below the source electron concentration by this modulation factor which is q V d s by k t ok. When V d s is equal to 0 as you can well see here your drain concentration is equal to source concentration that is what you expect in a symmetric device right. But here you have created a symmetry by applying voltage and hence you know you have a carrier gradient and that will set up a diffusion current ok. So, now given this you know we can write the expression for d n by d x which is simply n p naught e to the q psi s by k t into 1 minus e to the minus q V d s by k t divided by length. Now I can use this in my drain current equation that I had here replace d n by d x with that expression and multiply that with q d n then I get the current density multiply that with area you get current eventually right. So, then let us find out what happens to your current right. So, your current then j n diffusion is minus q d n you know we could replace d n as mu n times k t over q because d n by mu n is k t over q remember that. So, I have just made that substitution there and then n p naught e to the q psi s by k t by l into 1 minus e to the minus q V d s by k t. A very important observation that you can make right away in terms of the sub threshold current and it is dependence on the drain voltage is that when V d s is a few times thermal voltage you see q V d s by k t. So, q bring it to the denominator it is k t over q in the denominator at room temperature it is about 25 millivolt and if your V d s is let us say 7500 millivolt then e to the minus 4 is negligible compared to 1. In other words when V d s is little more than thermal voltage your sub threshold current is more or less independent of drain voltage. In other words it just sort of flattens out it only is dictated by what is the psi s value and psi s value we will see in a minute is governed by your gate voltage. So, you know for we will just look at this condition for V d s greater than a few k t over q you can approximate this J in diffusion as this right this is what we have. Now, what I am interested really is to replace this psi s in terms of gate voltage because I my interest eventually is to find out when V g is less than V t for any given value of V g what is the corresponding drain current now I already see that it is non zero current. So, now let us find out what it is then psi s you see we can write psi s in general as V f b I am sorry not psi s we will just rewrite this. So, what I mean here is V g that is applied gate voltage is really V f b plus drop across silicon and that is what we are calling psi s. In fact when I reach inversion that is when I replace left hand size V g as V t h and write 2 phi v for psi s correct and what is this here it is 2 epsilon q times n a psi s again when I reach inversion I replace psi s by 2 phi b and this becomes 4 epsilon q n a phi b the classical equation that we had earlier right divided by C ox.  So, that is 0 and here d we are differentiating left hand side and right hand side with respect to psi s. So, here what you essentially get is this is 1 plus differentiation of this and you know if you do that and if you simplify you know I will just skip a few steps just for you know brevity here eventually you can show that this is given by this expression you differentiate this psi s is psi s to the power half then half you know psi s will come to the denominator as root psi s when you differentiate psi s to the power half with respect to psi s right you can do all that algebraic simplification and eventually you write C d depletion capacitance as epsilon s divided by W d and W d in turn depends on psi s because psi s is the voltage across the depletion width right if you do all that you will come up with this very interesting expression. And you can even sort of rewrite it if you want as you know C ox plus C d divided by C ox both are one and the same in fact sometimes we call this factor here as m where m is greater than 1 right which is very obvious because it C ox plus C d divided by C ox. Now you can rewrite this to get d psi s as C ox divided by C ox plus C d times d Vg yes. So, what is this telling you you know this is this is telling you something very interesting and that is it appears now as a series capacitance circuit that we have what is there in the series capacitance circuit I have Vg here I have C ox here and I have C depletion here which is silicon capacitance and this is my psi s. And when there is a voltage change on the gate correspondingly there is a voltage change at psi s meaning that is a voltage drop across this C d as you know in a capacitive divider the voltage across this capacitor is the total voltage that is being applied or the change in voltage divided by other capacitor divided by the total capacitor correct. And that is exactly what we have here in other words what this is telling you is that the only fraction of the change in gate voltage appears as a change in surface potential. And what is that fraction is determined by this ratio as we will see this ratio becomes extremely important and that in turn determines what is your sub-ratiold slope. And you know given this as I said already you know you have this d psi s is you know d Vg by m correct. And because you know C ox plus C d divided by C ox is m and I do know that when psi s is equal to 2 phi b Vg is equal to Vt. And now we are asking the question when psi s is not is equal to 2 phi b accordingly Vg is not is equal to Vth what happens right. So, based on that I can sort of rewrite this equation as psi minus 2 phi b is equal to Vg minus Vth divided by m right ok. And the particular case when you know as I said we are now talking of psi being less than 2 phi b that is Vg being less than Vth right. And that is when we are trying to ask the question what is the current right. In other words your psi again here is 2 phi b plus Vg minus Vth divided by m ok. Now let us go back to this equation that we had your drain current Jn diffusion is all this factor ok times e to the q psi s by k t divided by l. Now I can replace this psi s because I have an expression for psi s below Vt psi s as a function of Vg is now derived. Let us make use of that equation and also let us you know instead of current density we will write the current I n or I ds simply as Jn diffusion times area ok we will not worry about what that area is you know area is the width of the transistor times the thickness over which the current is flowing because that is the cross section for you available for the current to flow ok. But let us just keep it as a ok and also let us club all this pre factor that we have as some constant ok some constant k ok because we are only interested in this exponential factor right that is our region of interest right now ok. So, in other words you know your current is some constant k which will absorb this a area and all other parameters such as mobility minority carrier concentration temperature and all that right. And this exponent e q psi s by k t that I am going to rewrite now as e to the you know q 2 phi b by k t ok this ok times e to the q Vg minus Vth by m fine ok. I am just looking at that exponential factor that I have here this exponential factor L is also absorbed in that constant right do not worry about that and in fact I make an observation that for a given doping concentration phi b is fixed and this is also constant I will also absorb that in a final another constant some k prime ok. So, if I do that then you know I have an expression here I ds is some k prime e to the q Vg minus Vth divided by m very very simple equation now which says drain current has now an exponential dependence on gate voltage you see when the transistor is on in a MOSFET drain current has linear or quadratic dependence when it is in linear or saturation region but now the drain current has an exponential relationship ok. And more importantly we are really interested in this quantity actually that is log I ds if you were to take here again some log constant some you know constant will not worry about that right then what you really have is q Vg minus Vth by m by log 10 to the base e or ln e here I am taking the log to the base 10 here log to the base 10 you see right this is what you will get the quantity that I am interested eventually is this d log I ds to the base 10 by d Vg this is the quantity that I am interested. So, if you do this differentiation what you get as you can see here is somewhere I have when I substituted that I think I have missed this k t right in the denominator right. So, here this is q by k t right this is here but I forgot to write it here right q by k t ok. So, you know that k t is out here and accordingly and that is also here ok and what you essentially have is k t m log 10 to the base it is ln natural log of 10 ln e ok. Now, I define a quantity called sub threshold slope which is inverse of this ok. In fact, that is why the unit for sub threshold slope is typically milli volt per decade this is this is volt and this is log 10 which is decade variation right you know because you have taken log the y axis is you know how many decades you are changing right and that is the unit that you have come up to right. So, now this essentially 1 over slope which means you invert this right. So, your sub threshold slope which is an extremely important quantity for a transistor. Now, we have observed and we have derived this from first principle as m times log 10 to the base e it turns out ln natural log of 10 is 2.3 and k t over q at room temperature is 25.8 milli volt approximately you multiply that with 2.3 you get 60 a good number to remember ok. So, in other words your sub threshold slope is 60 times m milli volt per decade because I took thermal voltage in milli volt right that is why it is coming in milli volt per decade ok. As you know m is really 60 times 1 plus c d over c ox milli volt per decade what is the significance of this sub threshold slope you see sub threshold slope as you can see depends on absolute temperature ok. So, if your chip has to operate no matter what technology you are using it will always remain at the same value it cannot change whether it is 1 micron technology or 50 nanometer or 40 nanometer k t over q is same ln 10 2.3 is same that 60 factor will never change. What this is telling you is that the very first picture that we saw here below threshold voltage current is small. However, current decreases exponentially it will never go to 0 it will decrease with exponential rate and the rate is fixed and the rate is fixed which essentially says every certain milli volt current decreases by so many decades. In other words if I were to now look at the drain current versus gate voltage with the drain current in log log axis what you will see is the following this is i d s. Now, this I am plotting in log scale this is your v t h value very interestingly what you see is this is above v t h above v t h the variation is only linear or quadratic. So, it looks almost flat, but below v t h current starts dropping very fast, but at v g equal to 0 this is v g which is your off state current is never 0 remember that because this slope is determined by sub threshold slope. The typical sub threshold slope is always more than 60 let us say it is 100 milli volt per decade. It means that below threshold voltage every 100 milli volt decrease in gate voltage decreases your transistor current by one order of magnitude. In other words if you are v t well to be 600 milli volt 0.6 volt which is what you use to have in older generation technology this is 100 milli volt per decade and let us say you are on current you see on current really does not change once you are above v t it is only a linear dependence. Maybe here you will have 1 milli ampere and here you may have may be 3 4 milli ampere or so. Let us say this current is in milli ampere that is on current of a transistor. If you have a 600 milli volt v t threshold voltage and 100 milli volt per sub threshold slope you can very easily calculate that when I come from threshold voltage to 0 voltage gate voltage my current should come down by 6 orders of magnitude because every 100 milli volt decrease in gate voltage decreases the current by one decade. So, 600 milli volt decrease you decrease the current by 6 decades. In other words if you have a milli ampere current your off current is nano ampere very good because your ion by ion of ratio is now 10 to the 6 on current is milli ampere off current is nano ampere that is what we said at least we need to have 10 power 6 on to off current ratio. We have a problem today the problem is as per the scaling theory we have been decreasing the dimensions of the transistor. We have decrease the gate voltage when we decrease all the voltages supply voltage today's transistors operated 1 volt. So, we no longer have 600 milli volt threshold voltage today's transistors will have to have threshold voltage of the order of 0.2 volt 200 milli volt threshold voltage. In other words I am actually looking at a highly scale transistor today which has a threshold voltage of 0.2 volt from 0.2 volt it starts dropping, but look it can drop only at this rate it cannot drop faster than this because this is the fundamental limit. This is the fundamental limit which is fixed by our derivation that we had k t o r q does not change 2.3 does not change and m no matter what you do is anywhere between 1.1 1.2 you know 1.5 you know in that range you may try to do little better and may be bring it very close to 60, but 60 is ideal you see you can never do it better than 60. So, this cannot be improved. So, what does it mean my on to off current ratio is going to degrade phenomenally. So, when transistor is supposed to be off you will have large current. If fortunately if you have done some good transistor design you have improved this sub threshold slope from let us say 100 milli volt to 70 milli volt let us say you know then you know if you have 200 milli volt as your threshold voltage or 210 milli volt just to so that we get round numbers right. 70 milli volt is a sub threshold slope 70 times 3 is 220 milli volt and hence when I come from 220 milli volt to 0 volt I would decrease the current by 3 orders of magnitude milli ampere current will only come to micro ampere my on to off current ratio will suffer when transistor is supposed to be off you will have lot of leakage current right. So, this is a fundamental problem we have today. In fact, that is the reason why if you look at the historical trends in CMOS technologies. In fact, we always said that CMOS is so nice compared to BJT because there is no static power dissipation you see this is my CMOS inverter circuit when I apply let us say VDD is older generation technology 5 volt I apply 5 volt here PMOS is off PMOS is really off because you know in order to turn on PMOS you have to apply 0 you know when you have 5 it is compliment right you really are having very very low current because your threshold voltages here are of the order of 1 volt right you have luxury to have several decades of decrease in current and hence this leakage is this current is almost negligible similarly when you have a 0 volt which is a static case right when your input logic is 0 NMOS is supposed to be off right it is indeed off because NMOS will have a positive threshold close to 1 volt 1000 millivolt even if I have a 100 millivolt per decade which is easily achievable my current will come down by 10 decades 10 orders of magnitude of current is 10 orders of magnitude lower than on current and hence no static power there is no static power we always ignored static power and that is why if you look at the power as a function of CMOS technology generation you know let us say starting from 5 micrometer technology going to 1 micrometer and today going to you know 0.1 micrometer which is 100 nanometer and below right today we are talking of 16 nanometer 40 nanometer and all that power has active power that is when circuit is switching it is doing some work for you it is a useful power because you are extracting some work from the circuit passive power is circuit is not doing anything ideally it should be 0 power but it could still consume power but in CMOS in older generation technology you know your active power when we look at the active power your active power you know would be somewhere out here let us say and your passive power or a you know off state power or was almost 0 very very small in fact you know I can plot this in a log scale right compared to active power this is several orders of magnitude lower that used to be the case but today because of the sub pressure leakage off state current is trying to catch up with on state current you see and what has happened over the technology generations is that with technology scaling power per units transistor decreases but we also put large number of transistor in a chip and chips are becoming bigger and bigger and hence the total chip power is increasing although if you look at one unit gate that is more efficient as we have already seen earlier as per the scaling theory but now we are talking of total chip power here right this is the chip power which includes active power P active and leakage power leakage power was almost negligible but today the leakage power really is looking like this this is P static in today state of the art technology especially high performance state of the art technology your static power can be as much as 30 to 40 percent of your total power no humongous that is of course we do lot of very interesting things both at the technology level and system architecture level we put the device in sleep when it should not really do anything your mobile phone screen sets off right. So these are some very interesting system architecting that we do so that you we essentially disconnect the supply voltage because if we supply voltage is there all these transistor will leak phenomenally right but this is really a very serious problem and especially because today we are talking of mobile devices right and mobile devices are becoming technology drivers and we need to really arrest the static power and this static power increase is simply because of the fact that I have to decreases threshold voltage you may ask why increase the decrease the threshold voltage you have 1 volt supply right you still make the threshold voltage 0.6 and that is exactly what is done in so called low power technologies ok. If you really are worried not about performance ok if you have a microprocessor which goes in your cell phone and a microprocessor which goes in a desktop PC both of them presumably are done on 45 nanometer let us say however the transistors that go in desktop PC microprocessor are really called high performance low VT transistors because you do not worry about power there you get power from your you know wall socket right you know it is continuously supplies power but you cannot afford that you know you do not want to recharge your battery of a cell phone every hour right you are willing to hit get hit on performance you know if the download file download takes may be 10 minutes instead of 5 minutes that is ok but you do not want to waste power ok and hence even though it is a 45 nanometer technology you may actually say that ok I do not really need this VT I would really increase this VT and hence my on current will accordingly decrease on current would not be up here on current will be lower but what you really get benefit is your off current can be decreased ok. So, you know you do lot of such tricks really you know it also turns out you have today technology is called dual VT technologies you see the idea there is that you know typically you know when you have chip right you know such as microprocessor chip which is essentially a very high performance chip it turns out the speed of the microprocessor chip is really governed by some transistors in the so called critical paths of this circuit. In other words you have let me get this correct here you have this chip this chip may have million transistor a few hundred million transistor it turns out at the end of the day when you actually do lot of circuit design and analysis there may be only specific transistors in so called critical paths critical paths from input to the output that matter all others really do not matter it only is important to make these transistors in critical path very fast because these are the bottlenecks in your speed and it also turns out typically the trans number of transistors in critical paths may be 10 percent of the total number of transistors. So, let us say 10 percent of the transistors of 100 million transistors that you have are in critical paths and these can be done with low VT whereas 90 percent of the transistors that you have in the rest of the chip can be high VT transistors. Now, you are trying to get best of both worlds you want speed and you have discovered that speed is only dependent on certain number of transistors in your chip make those transistors very fast they may also leak more, but that is it is only a part of the total number of transistors 90 percent of your transistors have much lower leakage current. So, thereby using the so called dual VT technology in other words if you have N channel transistors you will have two flavors of N channel transistors. You have low VT N channel transistors which will be sitting out here very low VT very large current, but very small fraction of the transistor and large number of transistors will be sitting out here which are high VT transistors and as a result of that you get high speed and low power by doing this you know some trick intelligent way of doing process technology and transistor design. All this is not really there in electric field scaling theory right I mean it all assumes that all transistors are identical you know single VT for all transistors, but now we are saying no look this is a problem, but this problem can be solved by having this intelligent solution and hence we adopt this right. So, you know that sort of concludes the targets that we had today. So, narrow width effect is important that impacts threshold voltage we use trench isolation to overcome that sub threshold conduction is always there right because of the diffusion current you have turned off the MOS channel, but there is a diffusion current and you know because of that you have an implication on the off state current of the transistor solution you have ways to intelligently design technologies to overcome those difficulties as well. So, let us stop here and we will continue in the next lecture.


She-Hulk on Disney Plus, the gift that keeps on giving. There was a post-credits scene featuring Megan Thee Stallion that's breaking the internet. Naturally, as a middle-aged white guy on the internet, my opinion is paramount to this whole thing, and I'm gonna tell you about it. First off, I didn't even watch the episode. I checked out on She-Hulk after the second. I'll maybe binge it when it's done, but this show means nothing to me. I know, believe it or not, it's not because I'm sexist or there's too much female power in it. I don't care about any of that, that's fine. I love the actress, the writing's kind of hacky. I just don't find it funny or engaging, and it's kind of a waste of my time, like most of the Disney Plus shows. There's just a ton of content out in the world, and this is like bottom tier in my opinion. Let's get to the T. When the credits start to roll, Megan Thee Stallion goes in there, she's dealing with She-Hulk. They're about to sign some documents, and next thing you know, it's all Apple Bottom jeans with the curves. I watched a clip, was it cringy? Sure. Was it out of place in the show? I don't think so, the whole show's kind of cringy. Am I upset over what I'm seeing? No, the MCU's kind of been dead to me for a while now. I don't really have any Tony Snarky comments to throw at this thing, but the people on YouTube did. In the comments, a lot of gems there. I'm just gonna quote some of them that I find entertaining. Daredevil is so lucky he can't see this. When She-Hulk proclaimed its twerking time, and then immediately started to twerk, I got chills.  Thanos should have snapped twice. The Watcher says, I think I've seen enough. Sometimes those internet comments get it just right. I look forward to episode four when She-Hulk opens an OnlyFans account. Anyway, short video. Had to say something though, because I want views, dammit. Subscribe. And nothing but props to She-Hulk. If you got it, flaunt it while you can, girl.  It's pretty sad state of affairs back there. Love to know your thoughts in the comments though. Let me know if you watch this crap, and you're like, oh my God, where are my pearls that I don't usually wear, but I need to for this instance to clutch them. Or maybe you're like me, and you didn't bother wasting your time because there's far better content out there to watch. All right, that's it for me. Like the video if you had a good time, and Sheila, why don't you play me out? I'll do some twerking myself.  Yeah, I would let She-Hulk wreck me if I was given the opportunity. Oh my gosh, you're still here. Thanks for sticking around. If you like what I'm doing, maybe join me on TikTok at Adam Does Movies. I'm also on Twitch, showing people how to edit some of these videos because believe it or not, there's some talent involved. So you can check me out there. I stream gameplay, I stream video editing. It's a fun time. If you really like what I'm doing, you can become a join member right here on YouTube or a Patreon at patreon.com slash, guess it, Adam Does Movies.


As summertime approaches, it's the perfect time to hit the road on your scooter. Keep your scooter safe by using a heavy-duty lock or a wheel disc lock. If you're a resident of Vancouver, you can pick up a free scooter lock at the following locations. To pick up your free lock, don't forget to bring valid photo identification, proof of Vancouver residents, a bill or a piece of mail, scooter registration details if your scooter is licensed under the Motor Vehicle Act or full details including the serial number. Quantities are limited and the locks will be given out on a first-come, first-served basis. Learn more about keeping your scooter safe at vpd.ca


The construction of Z-scheme heterostructures is of great significance for realizing efficient photocatalytic water splitting. Here, the authors report an interfacial chemical bond and internal electric field-modulated Z-scheme SV-ZN in 2S4, most two photocatalyst for efficient hydrogen evolution. This article was authored by Xiu Erhua Wang, Xiong Hu Wang, Jian Feng Huang, and others.


So apparently Eric Clapton is an anti-vaxxer. Yeah, Eric Clapton anti-vaxxer, and this isn't just something that he's vocalized, you know, talking about how he doesn't believe in the vaccines via Twitter. He's so big of an anti-vaxxer, he literally wrote an anti-vaxx song which has been dubbed an anti-vaxx anthem by Mary Poppinfuss of HuffPost. So I can't play the song for you obviously because of copyright reasons, but I do have the lyrics for you. But before I give you the lyrics to this song, the so-called anti-vaxx anthem, I do want to give you some additional context. So as HuffPost reports, vehement anti-vaccine rocker Eric Clapton has put out what appears to be a musical rant against pandemic restrictions and vaccines. The animated music video for the legendary guitarist's apparent anti-vaxxing anthem, This Has Gotta Stop, features an evil puppeteer and protesters brandishing signs reading liberty and stop. It also includes an illustration of Jam For Freedom, the British anti-lockdown, shriek performance group that Clapton supports, noted Rolling Stone, which was the first to report Clapton's latest. The veteran British musician, 76, has blasted COVID-19 vaccines since what he called his own disastrous health struggles after receiving the AstraZeneca vaccine. After the first jab, he straight away had severe reactions, which lasted 10 days, he explained in a note that was shared on social media in May. After the second injection, quote, my hands and feet were either frozen, numb, or burning and pretty much useless for two weeks, I feared I would never play again, Clapton added. He has characterized assurances that COVID-19 vaccines are safe as, quote, propaganda. It's hard to bite my tongue with what I now know, wrote Clapton, who refuses to perform at any venue where vaccines are required. I will not perform on any stage where there is a discriminated audience present, declared last month, wow, on social media, unless there's provision made for all people to attend. I reserve the right to cancel the show. Health experts around the world say that serious side effects from COVID-19 vaccines are infinitesimal compared to the health and lives saved. So I'm going to sound like an agist prick, but I'm going to say this anyway, like when he was thinking, oh my God, I might not never play again because of these side effects from the vaccine.  Do you think you have another 30 years of playing? I mean, I'm just trying to figure out like his mindset here. And sure, it's really unfortunate to experience side effects from the vaccines. Nobody likes side effects from medications. But I mean, if you were to get COVID-19 and you weren't vaccinated, you would have wished that you had those side effects because those side effects, as experts are saying, it pales in comparison to the side effects of getting COVID-19. And what's really especially gross about this is the fact that he got the vaccine and now he's discouraging others from taking the vaccine. So he's protected in the event he gets COVID-19. But now how many people will he convince to not get vaccinated? Because he had side effects for 10 days. It's just it's truly, yeah, yeah, it's really disgusting. And you're going to see people who are kind of like skeptical of vaccines, relatively vaccine hesitant, that chose to get vaccinated. But then they're going to attribute whatever negative or physical or even mental illnesses that they have to the vaccines. Like if they have like, I don't know, a headache, they're going to say, well, I was vaccinated six months ago, like we're going to have to really look out for this is going to become a common phenomenon because people are going to work backwards from the conclusion that vaccines are bad. And this is going to be used as evidence that the vaccines are indeed dangerous. People are going to say, oh, well, Eric Clapton, someone who I like, this legendary guitarist, you know, he says that the vaccines are bad. He had a bad experience, so I trust him. And, you know, that same person might choose to not get vaccinated because of what Eric Clapton says. And then they might contract COVID-19, give it to someone else.  It's just really frustrating. So I want to play you the song, but I can't, obviously. But I've got the next best thing, which are lyrics.   And when I when I read this, like, I think that this is a simpleton who wrote these lyrics. So he says, this has got to stop enough is enough. I can't take this BS any longer. See, it's relatable if the BS he's referring to is the pandemic. I would very much like to move on from this pandemic. We've been dealing with this now for almost 19 months. I'd like to move on. I'd like to get back to normal.  So, yeah, I'm also tired of this BS, but the BS that is coming out of your mouth. It's gone far enough. If you want to claim my soul, you'll have to come and break down this door. So I'm assuming this is like some sort of in, I don't know, some tacit attack on this idea of vaccine mandates. But your soul was already claimed because you got vaccinated. So it's too late for you.  Eric Clapton. So too late. I knew that something was going on wrong when you started laying down the law. I can't move my hands. I break out in sweat. I want to cry. Can't take it anymore. This is him, like, presumably talking about the side effects that he got from the AstraZeneca vaccine.   We all had side effects from the vaccine. I was sick for about a day. I had chills the night when I was vaccinated on my second dose of the Moderna vaccine, and then the next day I felt like pretty tired. I had body aches, and then I felt better the next day. And then by the third day, I was fine. Now, I'm also a lot younger than Eric Clapton. So, you know, it's probably going to affect him differently.  Like this is a virus that we're dealing with. And we should be thankful that we have this vaccine so soon. It's like a miracle, right? That we have a vaccine that's highly effective and safe and it's widely available in developed countries. But what do you do?  OK, well, then, you know, imagine how you feel if you got covid.  I can't move my hands. OK, read that. OK, so he's repeating. I believe that's the chorus. I'm not sure. It's gone far enough. I've been around long, long time, seen it all. And I'm used to being free. So you never grew up in a world where vaccine mandates were a thing because they've always been a thing. So if you're used to being free, then it's just like what your perception of freedom is.  But your freedom isn't being impeded by vaccine mandates. See, you're impeding on the freedom of others by propagating this misinformation by encouraging people to not get vaccinated because when they don't get vaccinated, when this virus continues to spread, then it mutates. And a new mutation might bypass the existing vaccines that we have. The new variant might very well bypass the vaccines, right? So I want my freedom, my freedom from this virus.  I don't care about what you believe is freedom. Freedom is truly being able to live your life and not have to worry about a highly contagious deadly virus. These people are so petulant. I know who I am. Try to do what's right. So lock me up and throw away the key. This is the conservative persecution complex. These people really want to feel as if they're victims for some reason. My dude, you are very, very wealthy.   Like you are as rich as you can possibly be. And you're trying to be the victim.  Oh, my God, these people are insufferable to me. Thinking of my kids, what's left for them and then what's coming down the road. The light in the tunnel could be the southbound train. Lord, please help them with their load. I'm going to come. This has got to stop. Enough is enough. I can't take this BS any longer. OK, I think we're getting down to the climax here. It's gone far enough. If you want to claim my soul, you'll have to come and break down this door. This door, this door, this door, break down this door, this door, this door. Mr. Clapton, sir.     Is he British? I think I said he's British, right? That's not as big of a deal. Two British people. Yeah, he's a British musician.     You're making anti-vax anthems. Like, is this really what you want your legacy to be anti science during a global pandemic?     Stop discouraging people from getting vaccinated.   I'm exhausted, but I mean, we'll continue to see this stupidity because that's the world that we live in.