I have actually checked on the website, the Amazon India has this book. This is the ad for that. If you have not purchased it so far or couldn't, this is what recent I saw yesterday. It is 718 rupees or whatever possible. And this is second edition, 1st January 2009. This is available at website www.amazon.in, silicon, vales or technology. This is written here. You can take, they say 5 days, 5 to 8 business days. So in case you have not purchased or don't want to purchase yours, but in case you want to, this you can note down or maybe you can go on Google and say Amazon India. So whichever way it is. So don't tell me that book is not available or something, something. Is that okay? Coming back to those who want to write that website, maybe you can in case you feel that that is what I am not. We were other day looking for Bruce Deel model, Bruce Deel and Andy Grove model for oxidation. The first paper published in this area in way back in 65 and this model is very popular in the literature called Deel Grove model and I just told you other day Grove was the, one of the CEO or chief of Intel from say 1992 to 97, is the emulators scientist or emulators CEO of Intel. Andy Grove also has a book on physics and technology of semiconductors or other technology of semiconductor, which is a whole book but many things remain same irrespective of the today or yesterday. So one can also look for Grose book in the library. There is another book on VLSI technology by Wolf, WOLF, Wolf which is also very good, okay, which is rather recent compared to Plummer of course older but around 2006, Wolf has also published. So any of these books are good enough, please do not say that the books are not there because of that whatever happened, okay, at least do not blame books, okay. So the assumption what he did was that initially there is a finite thin oxide and at t is equal to 0 minus, this is the oxide available and t is equal to 0 plus oxygen attacks this silicon layer, silicon dioxide layer and starts the oxidation. We did last time I am just trying to recapitulate. Then the oxidant species then reacts with diffuses through the thin oxide, reaches to the silicon-silicon dioxide interface, reacts with silicon and forms SiO2 and we already last time said there are three fluxes, F1 in the gas phase, F2 in the oxide and F3 near the interface of silicon-silicon dioxide and we also discussed other day that in steady state if the oxide oxidant is coming, diffusing, reacting the system has to be in steady state and in steady state all fluxes must be equal, okay. This we have done last time I am just trying to push it again and we say F1 is equal to F2 equal to F3 and that we call it F, okay and we will show you this process again but this is just to show you how oxidation proceeds. Inside the furnace where temperature is kept 800 to 1200, wafers are vertically start on a quartz rack, oxygen is entering here and oxidizes this silicon. So let us start with the model, this is what we did last time. So now we actually look for the model, okay. Here is the model, same thing what I wrote but there are now few more definitions. Let us say Cg is the oxidant gas or oxidant concentration in a gas stream that is not near the surface but inside the whole tube actually. This is called Cg, then corresponding to this Cg we have a oxidant concentration at oxide interface is Cs, okay or rather C0, sorry C0, forget it, Cs is the concentration here. So there is a gradient because there is no enough oxygen here or oxidant here so there is a gradient from Cg to Cs, okay. Now these are called gas phase concentrations. So equilibrium concentration at the solid also can be found and we define C star as the equilibrium oxidant concentration in solid related to this Cg, Cg is the gas phase concentration and C star is the equivalent of that in the solid phase whereas C0 is similarly is equilibrium oxidant concentration in solid related to Cs. So this relates to here and this relates to here, okay. This is then we say initial oxide thickness is Ci, initial concentration at the interface is Ci, okay and we say already Xo oxide thickness exists or Xi rather but Xo is the oxide thickness which we want to find at a given time and temperature. So let us look at the fluxes now. According to Deal-Grow model flux F1 which is in the gas phase from the ambient to the surface we know the flux will be proportional to the gradient. If Cg is the gas concentration in the bulk, Cs is the gas concentration near the surface then F1 must be proportional to Cg minus Cs. Whatever is the surface and what is available in the stream the gradient is set and that difference between the two is the flux F1 and the proportionality constant is called mass transfer coefficient Hg, mass transfer coefficient Hg. So F1 is Hg times Cg minus Cs, this is the first flux which we are looking into that is the gas phase flux. However we are more interested to know there are terms which probably you should learn from thermodynamics but there are words called pressure, total pressure and there are words called partial pressures. Partial pressure is defined as the pressure of a gas inside a stream in a given temperature in a given area okay. So if I know F1 is Hg this I want to replace this Cg and Cs which are not known to me, Cg and Cs cannot be monitored so I will try to know is there equivalence of these in terms of partial pressures and if I know the partial pressures then I will also know correspondingly to that partial pressure using Hertz equation we will find out what is the solid phase concentration for this partial pressures. So at the end I am interested to correlate Cg, Cs with C star and C0 this is what I am looking for. So the first thing I do is after I write Hg into Cg minus Cs as the first flux and where I repeat Hg is called mass transfer coefficients okay. We define Cg by ideal gas law Pv is equal to RT there is nothing great about this is concentration so Pv is equal to RT. So Cg is equal to Pg by kT, n is the number one molecular this so we Rkt is nkt can be written as n is equal to 1 therefore RT is kT. So Cg is Pg by kT, Cs is Ps by kT where Pg, Ps are the partial pressures of the oxidant at gas ambient and oxide surface okay. Again same Pg in the gas stream and Ps is the at near the interface of oxide and gas stream okay. So if I substitute Cg and Cs in the last equation by Pg and Ps term then I get F1 is equal to Hg Pg by kT minus Ps by kT or is equal to Hg by kT into Pg minus Ps okay. Please remember if I fix temperature and if I fix the gas flows total gas flows Hg is a constant which is the mass transfer coefficient proportional to the total pressures okay. We will see then in case of CVD. We invoke Henry's law for gases and fluids there is a Henry law which actually relates the partial pressure to solid state concentration this is called Henry's law. According to Henry's law the C star which is the equilibrium oxide concentration in solid state is proportional to the partial pressure in gas stream similarly C0 which is at the surface of SiO2, C0 is proportional to partial pressure at the surface which is Ps and there is a constant associated with this equilibrium this which is called Henry's constant. So C star is H time Pg, C0 is H time Ps where H is called Henry's constant okay. So now you can see I have relationship with C star and C0 in terms of Pg and Ps through Henry's constant. So I can use these 2 equations to go back into 3 and find the flux F1. What is the method? First I converted Cg and Cs into equivalent partial pressures by mass transfer coefficients. The partial pressures are related to their equivalent solid state concentrations by using Henry's law or Henry H is the Henry's constant. So now I have C star and C0 which are at this surface please remember C star and C0 are at the surface of SiO2 which are in solid phase that is the oxygen we are going to actually diffuse through okay. So F1 therefore is that okay I repeat first we relate Cg to Ps, Pg, Cs, Cg, Ph, Pg, Sa and then we wrote this equation then we say okay using invoking the Henry's law of flux C star is proportion to Pg, C0 is proportion to Ps then C star is H time H is capital H Pg and C0 is H time Ps and now I have substitute Pg, Ps from here in this equation 3.  So F1 is H time C star minus C0 so first flux in the gas phase is related to solid phase concentration difference H time C star minus C0 so this is the first flux we obtain. Now as I say what is our game is to find F2, find F3 and then what do we do? We write F1 is equal to F2 and then solve ultimately what I am really trying to do is I want to find dx0 by dt what is dx0 by dt? Rate of oxide growth that is what I am interested in rate of oxide growth so if I know the time I know how much is oxide I will be growing in case of oxidation so that is my purpose. So first flux F1 I got now secondly if we look at our figure again just a minute if you look at this figure F1 we have found in terms of C star C0 F2 is the flux which is diffusing inside in oxide F2 is the flux of oxidant passing through the oxide thickness and that is equal to C0 minus Ci okay Ci as I say is concentration of oxidant at silicon-silicon dioxide interface Ci so there is a gradient diffusion okay. So F2 is then proportional to C0 minus Ci by X0 this is gradient C0 minus Ci by X0 is essentially a gradient and what is the gradient constant should be since it is diffusing what should be the constant of proportion to here diffusion coefficients okay of that oxidant in the oxide please remember diffusion coefficient is for the material oxide or whatever species going in that material diffusivity is different in different material for different gas flows going in so specifically you had to earlier we had talked about impurities in silicon now we are talking of equivalent solid concentration of gases in the oxide and how do they diffuse through okay. So if I write that I write F2 is minus D effective minus is because I am subtracting Ci minus C0 by X0 where the why I did this because final concentration minus the initial concentration divided by X is actually slope okay it is essentially how we define that is going down so that is the final concentration minus the initial concentration divided by X0 is the gradient so minus D effective Ci minus C0 by this where D effective diffusion coefficient of oxidant in oxide okay this is flux F2 now this is now made available to react with silicon oxidation oxidant is now diffusing please remember what is the process we are saying the gas from the gas phase oxygen is coming equivalently it gets to the silicon oxide surface then diffuses through and then reacts with silicon to form fresh oxide is that clear that is what deal go model is suggesting gas phase through oxide and to react with silicon that is the process we have defined so we want to know what is the flux 3 which is proposed and we know flux 3 is essentially as many silicon atoms are available our concentration of silicon available Ci at that place that is the only one which it can react with oxygen cannot react more than Ci because whatever available only can react so we say the flux F3 is proportional to Ci and the proportionality constant is called reaction rate constant KS reaction KS is called reaction rate constant so F3 is KS Ci so now three fluxes F1 is from gas phase to the silicon dioxide surface from silicon dioxide surface to silicon surface diffuse and then reacts with silicon to form fresh oxide okay and as I say if I assume it is in steady state which will happen I put the vapor in a constant temperature constant flow system will go into steady state in that case the flux F is F1 equal to F2 equal to F3 okay no no no what we are saying available concentration in the solid phase from the bulk is C star of which only C0 is really going to diffuse because that is at the surface Cs is available which correspond to C0 in solid okay correspond I just now said gas concentration equivalent in solid concentration is related I just now said through the mass transfer coefficient okay and through that to partial pressure through that to Henry's constant to the actual concentrations so we are saying the gas is coming equivalently how much gas is available overall of which how much will diffuse from the surface is C0 it will go to Ci because there is a gradient there is very few oxidant here and very large oxidant here so it will diffuse and when it reaches here it will start reacting with the silicon surface and form oxides so we do little maths and there is nothing very serious maths since we are already done F1 F2 F3 are equal we say first we equate F1 equal to F2 and next time liquid F2 equal to F3 so if I write F1 equal to F2 I get SC star minus C0 minus D effective Ci minus C0 by X0 and if I write F2 equal to F3 I get minus D effective Ci minus C0 by X0 is KSCI so I equation 9 and 10 which are we I got it from equating F1 equal to F2 and F2 equal to F3 two equations to announce I am I am interested to know C0 I am interested to know Cci in terms of C star available gas phase concentration and correspondingly I derive solve these two equations 9 and 10 how do I take Ci out of this substitute here and find C0 or get C0 from here substitute here to get Ci okay this mass is a little longer so I just wrote down the final equation I repeat solve 9 and 10 to get Ci and C0 substitute one of them to the other you will get the other value or substitute from the C0 into the second equation you will get Ci first whichever way you do so I get Ci is equal to C star upon 1 plus Ks by H plus Ks X0 by D effective then C0 is 1 plus Ks X0 by D effective times C star and the denominator is same please remember denominator is same 1 plus Ks X0 by this Ks by H so I have now Ci and C0 okay I may not be very I do not need to know C0 very much but I am interested to know Ciy because that is the concentration it is going to react with silicon so I figured out both can be calculated but I am more interested to know Ci in terms of C star which I got so what deal model says now what is the oxidation rate can anyone suggest what is the oxidation rate if F is the flux and N is the number which is available for reaction so F by N is essentially equal to DX0 by DT if what is DX by DX DX by DT available flux divided by available concentration of where it can react the ratio of that is essentially DX0 by DT so that is grow deals model which says if anyone is the concentration of oxidant molecules then DX0 by DT is F by N1 and F is equal to F1 equal to F2 equal to F3 so F3 is the smallest term Ks Ci so I use F3 instead of I can write any one of them but then there will be two variables coming so I just want to remove I have got Ci value anyway so I got Ks Ci by N1 please remember this N1 for oxygen is 2.2 to 10 to power 22 N1 for H2 OH HOH molecule is 4.2 of that OH OH double the concentration whereas pure oxygen has N1 as 2.22 into 10 to power 22 this has been chemically monitored measured by many experiments by atomic spectroscopy to FTIR everything we one is monitoring that so if I DX0 by Ks Ci by this I substitute Ci from the last equation I just derived an expression for Ci so substitute Ci here so it gets Ki upon C star upon N1 1 upon 1 plus Ks pi H K sorry Ks X0 by defective so how does it look like we will do some simple looking expression for this plus you have not done this yes so I get DX0 by DT is C star by N1 1 upon 1 plus Ks pi H plus Ks X0 by D effective so this equation now I know I can modify this equation to suit some kind of good looking expressions okay what is good looking some AB constant so it looks very simple equation algebraic of course now algebraic first order differential equation is that noted this one DX0 so I have now the oxidation rate and I will modify the form that is what I am doing is it okay okay so DX0 by DT is 2 C star D effective by N1 I actually multiplied 2 D effective 2 D effective by Ks both sides norm this and here and I get this expression readjust the terms 2 D effective 1 plus Ks by 1 by Ks plus 1 upon H plus 2 X0 into this constant and now I define some terms I define term A as 2 D effective 1 upon Ks plus 1 upon H as A and I 2 D effective C star by N1 I define as B okay same expression this I defined as B and this I defined as A so I get a very nice looking simple differential equation first order DX0 by DT is B upon A plus 2 X0 please remember Ks is a function of temperature H is a function of mass transfer coefficients or mass flows in normal case H is much higher than Ks but let us see how much DX0 by DT B upon A plus 2 X0 is the simplest equation we get okay which good looking assuming that B and AR constants at a given temperature for a given mass flow okay if you change that these terms will B and A values will also correspondingly change is it okay so I say very trivial looking this but it is important why are we doing this again because at the end when I monitor the oxide I have the furnace I actually oxidize the wafers and then I may do some characterization to know the oxide thickness but if I am doing something process on a system where there is no furnace and there is nothing to this I must be able to get relative oxide thicknesses every now and then a change in oxide thickness or whatever I am doing in process which is running on a CAD tool okay that is called T CAD for technology tools are available earlier ones we used to have program from Stanford called Supreme process simulator there are now many one is Centura other is DOS there are many such program this is which is device plus process simulator since we have many process simulators now we like to know what models they use because they will also find out what is the oxide capacitance every now and then so they need to know oxide how much grown okay so you may specify temperature you may specify gas flows you may specify but then at the end software has to do something to evaluate that we need models to do that so all this effort is to see a model which is going into a T CAD tool okay so whenever you are using Centura or others you probably do not even look at the models you just it ask data you just substitute you guys are good but actually what has gone through is this and maybe tomorrow for thin oxide better models will be required so you must know how do we actually derive models okay what is the physics behind chemistry behind material science behind and your brain behind okay so I rewrite the same term ADS0 by DT okay so if I solve the if I see this equation this is a quadratic equation so we put an initial condition to solve the differential equation sorry not it is a simple differential equation I say at T is equal to 0 according to deal gross model there is a initial oxide XO is XI that is how we started with there is an initial oxide okay so XO is XI and corresponding to this time XI if I use okay so we substitute here and let us say tau is the time taken to create this XI let us say tau is the time taken equivalently actually it is existing we do not know what time we did we did not do anything so we say okay equivalently if we had to go this much oxide how much time so that time I declared as tau so I say now AX if I put it this A2X0 DX0 is BT and I integrate this then I get AX0 2X0 square BT plus initial condition I will put it at X is equal to XI tau is the time taken so I rewrite this term AX0 by 2X square BT plus B tau tau is the time taken to grow oxide thickness of XI and this is only a fictitious number why fictitious the initial oxide is already there we are we are just trying to equate it to a time frame okay all to say tau is XI square plus AXI upon B AXI XI square AXI by B is essentially this XI also I do not know in fact okay so we assume normally tau should be very small because thin oxide is there but if I somehow figure out how much was XI then I should be able to know how much time equivalently it would have been okay. Okay so this is my equation and this looks what a simple quadratic equation and therefore I can find X0 terms okay I repeat the term which I am getting is AX0 plus 2X0 square 2 2 of course will cancel X0 square is equal to BT plus tau so this is the expression you will get X0 square plus AX0 is BT plus tau for a thicker oxide grows tau can be neglected why because T will be much larger than tau tau is very small but it is existing but for a thinner oxide that may be comparable so we must figure out how much is actually thin oxide during initial time must be actually evaluated okay I will show you how.  So if I write only plus sign I get X0 and I put minus inside so A by 2 into 1 plus T by tau A square by 4B to the power half under root minus 1. Now we define some whatever we A and B we define we actually give some nomenclature to them and why we will see soon we call B as a parabolic rate constant B is called parabolic rate constant and B by A is called linear rate constant this is definition name wise and why we name linear and parabolic will be soon seen when we will take the two cases okay I repeat B is defined as parabolic parabolic rate constant and B by A in many models this this is given KP and this is given KL parabolic KP and KL so most of the earlier cap tools may be using or even central uses capital KP means parabolic rate constant capital KL is essentially is linear rate constant okay which is same as what I have been using this is deal go model I cannot change K is there because that is deals model if it is my model I can do any other names but this is deals model and that is how they are defined okay way back in 65 two limiting cases okay just look at this terms this term is smaller or larger depends on this T plus tau is larger than this T plus tau is smaller than this two extreme cases okay. So first we say T plus tau is much smaller than A square by 4B so we can expand it by binomial term so 1 plus X to the power half if X is less than 1 is 1 upon half X so this 1 plus half T plus tau by A square by B minus 1 1 1 cancels so X0 is B by A T plus tau for a given temperature given gas flow B and A both are constant how is the X0 related to time linear B is X0 is proportional to tau tau is T tau is very small so X0 is proportional to time what is this growth is linear it is linearly increasing okay. So now we understood why I named B by a linear rate constant because X0 is B by A times T and therefore B by A is named as linear rate constant okay so initially what will happen that what does that mean if T is smaller what does that mean initially oxide will grow linearly with time and as time increases we believe it will become parabolic and let us see how that can happen is that clear so initial growth of silicon dioxide is linear with time and then starts it reduces the rate anything why it will reduce the rate as the time increases oxide thickness will increase so the gradient will decrease is that clear to you so if the flux available is less whatever is available may react but available is less okay so the oxidation rate will go down okay so that is the essential as you go thicker oxide must smaller impurities I mean oxidant will reach there so smaller thickness relative to the time will grow okay is that point clear why this is happening so okay before we come to parabolic there are few terms to be explained B by IA is to now we substitute B and A to defective C star by N12 effective case plus this can be rewritten as C star upon C star upon N1 case H by case plus in general for a given mass flow in oxidation furnace and for the temperatures which we normally use from 800 to 1200 H is much larger than case case is e to the power minus e by kT kind minus 4 minus 5 whereas B will be H sorry H will be order of few centimeter per seconds okay which is much higher so what happens in most normal cases H is so which is it limited by H or KS smaller than one limits it larger one does not limit it okay so H is not I do not say every time in series I know it is mass limited but in this particular case we say H is much larger than KS so if I do this I can neglect H upon H it can goes so we get B by AC star by N1 into KS okay is that okay if H is larger than KS this can be neglected okay when upon H is smaller compared to one upon KS and therefore we neglect H and we get C star upon N1 into KS and as I say case how do we define case reaction rate constant what is reaction rate available oxidant reacting with silicon the rate with which that reaction takes place it is a chemical process which essentially means which is essentially temperature e to the power minus temperature dependent term so B by is also linear rate constant which also follows case dependence of temperature is that clear BS be by a is a function of case case follows temperature dependency to the power so be by will also follow temperature dependence same as case okay so we write then this is the X0 C star by N1 KST plus star this is called so initial oxide growth is related to with time as linear growth and it is also limited by available reaction rate at CI how much is available only can much please remember availability of CI I mean is the silicon atoms which can it react I may have enough oxidant but not all is possible to react okay initially enough oxidant has come but they are not enough bonds where oxygen can SI OSI bond can be formed so the growth rate is limited by available bonds so it is essentially decided by case which is temperature dependent okay typically I will show you the term but as just now want to clarify okay please remember oxidant is reaching enough amount thickness is very small much of it diffuses through whatever is available most of it will reach CI but available oxidation will be limited by the reaction there which is temperature dependent which is essentially in how many atoms can react okay this is the case one what is that case we are talking time is very low smaller times T plus tau okay however if T is much larger than tau and T is much larger than a square by B longer time oxidation is performed T will be always larger than tau is very small so if T is much larger time T plus tau is T and then we say T is larger than a square by 4B then we can neglect one there and rewrite the term X0 as 2 root TB by A into A by 2 minus A by 2 if I readjust this terms this is just substitute into the equation which we wrote earlier in quadratic solution substitute T much greater than this one can be neglected there therefore under root of that is root TB and into A by 2 minus A by 2 and if I do this it essentially comes to be equal to root BT okay we are neglecting small terms so compared to this everything is small this term is smaller than this we already said through this so we always say X0 is root of BT which means X0 square is BT what is this law parabola this X0 square is BT is a parabola so X0 breadth is now under root of BT means it reduces the oxidation rate as therefore oxide thickness as time is larger and larger initially so initially linear and then parabolic growth starts in the case of oxidation so this is the and since B is parabolic constant I mean is giving a constant of parabolicity so we call B as parabolic rate constant B is called parabolic rate constant I told you know this A square by 4B is much smaller compared to T so A is much smaller obviously this term is a is much larger than this okay so it that is negative in actual models you do not neglect anything but if it is a 100 minus 0.05 think of it whether you want to retain 0.05 if you wish fine 99.95 is the answer or 100 your choice what decimal accuracy you want 64 precision 128 bits of precision computer can do any precision okay here is some experiment was performed okay just to compare those value which I am talking about I have done an oxidation experiment means actual experiment was performed I have grown an oxide or silicon at 920 degrees centigrade and assume that tau given to me is 50 seconds okay 50 seconds now we monitor X0 at different times I keep growing 5 minute say time in hours so this is some 6 minutes and this is 18 minutes this is 24 minutes this is 30 minutes this is 60 40 minutes roughly 36 minutes so I have a different oxide thickness oxide times oxidation times in this is in hours please remember this is in hours and I have monitored by some way the oxide thickness we will see how to monitor oxide thickness and I monitored measured them for 0.11 hour it is 0.044 1 micron 0.3 0.10 0.4 0.128 0.5 0.153 0.6177 okay since you did not want to leave a I have used it to show I can take care how do you get that value also useful since X0 square is BT plus tau minus AX0 so I get AX0 is BT plus tau by X0 minus A okay what is this equation looks like this is Y is equal to a mixed plus C kind of equation linear so if I plot T plus tau by X0 this term versus X0 so somewhere at 0 that is T plus tau at tau by X0 at this point whatever is the constant is minus A so you can monitor that minus A how much is minus A so in actual I just want to make parabolic I said neglect A but in calculation I have I will take care because I need to know A okay I need to know A so by extrapolating this curve I will get minus A and the slope is B so I could get B and B A and therefore B and B by A that is KL and KPR monitored if I know actual oxide thicknesses at different growth temperatures okay different growth times okay assumption everywhere is temperature is constant and also the mass flows are constant so if you can see there that if I do experiment I will be able to measure B and B by A okay and then what do I have to do this I have to repeat for many temperatures okay to get B and B by dependence with temperature and then I figured out later maybe I do not know whether I have graph I have okay I will show you it shows that it is actually following the physics that is case and diffusivity is essentially whatever their temperature dependency same happens to B and B by A as well okay we will see this little later so is that okay so I can monitor B and B by A by actually monitoring the oxide thicknesses at different times of oxidations okay is that plain clear so let us say by typical experiment which I did or rather someone else had done of course I have calculated but this data was taken from our lab okay many years ago so B is 0.2 microns square per hour A is 0.5 micron and B by A therefore is 0.4 microns per hour 0.4 micron per hour so I I just now said if I know the data I will be able to plot time versus X0 by this and if I know this I will be able to evaluate B as well as B by A now as I said you I will repeat this experiment what do I do at different temperatures again oxide thicknesses for only thing is now I may do it for a given time okay I mean same time so that but even if you do different time graph will slow the slope so it does not really matter as long as you but preferably you do same so that you know where the slopes are moving okay just to see them why you want to do this because I want to know whether B and B by A really follows D and KS that is what we have been from the experiment from the theory we are looking that B by is following KS and B is followed D effective so can does that temperature dependence appears we will like to see that so we actually do repeated experiment at 1100 and 1200 monitor oxide thicknesses at same times and replot B and a replot X0 versus time and get B and A for all of them okay for different temperatures this is for 920 repeated for 1000 repeated for 1100 repeated for 1200 if I do this the data I get is 920 is this and 1200 is this this is B by A please remember units B is expressed as micron square per hour and B by is expressed as micron per hour linear and parabolic words square okay okay so if I plot now B versus 1 upon T okay for dry oxidation of course I have not talked about this but will come dry means only pure oxygen is passed okay so if I have a dry oxide and I plot B versus T 1 upon T I see a straight line okay and its slope is 1.23 electron if I plot B versus temperature 1 by T in fact and I actually see for a dry oxide case the slope is 1.23 electron volt if I repeat the same graphical this for B by A versus temperature I plot B by A versus 1 upon T and I get slope of 2 electron volt okay this is experimental okay this is experimental because I what I did I actually went and did oxidation monitored the thicknesses at different temperature for different times and plotted them to get B and B by A different temperatures so this is no model this is essentially what I can measure okay and now I want to prove that what I said in a model probably fits to what I monitored and therefore Brodyl model is reasonably good okay is that point clear to you okay okay so B and B by A for dry we do wet oxidations in 95 degree water vapours so I did it we did same experiment for wet oxides and I find for B the slope is 0.78 EV and B by A has a slope of 2.05 EV let us look at this term again B and B by A okay if you have noted down as I say B by is also called KL and B is also called KP in many simulators and that can be written as C1 exponential minus E1 by KT C2 exponential minus E2 by this is the model they are used okay and if you see here these are the ease E1 E2 okay this is the temperatures slope we have got it C star into case by N1 is that is what we are just derived B B by a C star case by N1 B is 2 effective by C star case C is constant N1 is constant so if this temperature dependence has to come case must have similar relations if this relation has to be followed in this the D effective must be for I mean E2 must be following the activation energy associated with D effective okay is that point clear if these are equals from the graphs if I say then the since here they are constants only D effective is temperature dependent case is temperature dependent so obviously this E1 must conform to case and E2 must conform to T effective okay and yes this experiment was further extended and once we did this we found that they did they did which essentially means what the linear rate constant B by A essentially is governed by reaction rate constant which has temperature dependence of e to the power E1 by kT where E1 is 1.23 for dry oxidation 0.78 for wet oxidation so case actually follows what the growth is this diffusivity of oxidant for dry or wet you can see from here sorry this was case this one for B we find it is 1.23.78 and we figure out D effective has the same energy of oxidant in oxide as such we know and same is reaction rates we know about in real life we actually monitored by different methods so we figured out that this process is reaction rate limited and this process is diffusion limited and which is obvious initially when the oxide thickness is small available oxidant is enough it is the reaction possible at a given temperature to convert silicon into silicon dioxide Si plus 2 O 2 Si O Si O bond has to be formed now this at a given temperature is this is the reaction so it has to this reaction will be temperature dependent that is what exactly we did experiment and we found yes it does depends on this however when I increase the time that means I have larger time by then already oxide thickness has grown so the available oxidant now at the interface of silicon silicon oxide is smaller and it is this as much as you can diffuse through is going to available for oxidant any amount coming I will oxidize but available is only what you will supply okay so it is the diffusivity which decided how much oxidant I can provide initially everything available so reaction is in next time reaction can be done any amount but available Krishna that means the reaction rate constant is dominant in linear initial times and parabolic rate constants are dominant in thicker oxide times this is called whose paper way back in 71 very famous person now we also figure out that the oxide thickness for 111 plane is different from 100 we are shown the last time that oh maybe we have to sorry we are not shown so why do you think that C1 constant is larger for compared to this the reason why 111 shows oxide thickness thicker can anyone suggest why it cannot be thicker because more atoms on that plane the question asked was exactly this Miller planes the Miller planes in how many atoms are available on that to react okay so 111 shows the maximum silicon atoms four of them in fact are four corners and three inside since they are the largest number the growth rate is highest along the plane okay this is exactly what is data has been shown taken from Karl who based on this I can again show you this same time once again and again the slow activation in case and activation energy related with the diffusion is found identical what is measured for B by B which verifies B by A is case limited and B is de-effective limited identical the energy associated with case and one upon T and de-effective one upon T their slope essentially matches with the actual data measured by B and B by A which means the great deal model to a great extent okay is valid except for the assumptions which we may have to modify as things go okay but for a thicker oxide less than say thicker oxide around 100 Armstrong's are above great deal model fits very well anything below 100 is not true for de-effective and case for whom case will be a different activation energy which is essentially what B by A we got B by A is proportion to case so if I monitor case by not by B by A method by actual reaction by thermodynamics if I evaluate thermodynamically this equation I get whatever activation is associated I figure out that is same as what B by A I got by experiment so which means B by A is case limited okay I did same thing for diffusivity experiments from the chemical point of view and whatever energies I found for both weight and this I matched it with B values and I find I got the same within errors within experimental errors attrition energy is the energy required to react okay is essentially a bind is a enthalpy either yeah by any reaction whether binding or dissociation or enthalpy formation is essentially related to energy the if A plus B has to go to C plus D then the reaction is favored forward if the Gibbs energy is plus that is enthalpy minus entropy T delta is positive if enthalpy minus T delta is negative dissociation B C plus D will go back to A plus B okay we will see in CDD this is where we adjust the growth if I want growth what should I do A plus B should be stronger in delta G must be positive so A plus B will react when I want to H what should I do I do not want reaction I want etching okay so I see to it C plus D goes back to A plus B that is exactly what we do depositions and etching are identical the reaction are favored or not favored okay is that point if something is formed I reverse it don't form okay remove it okay so that is exactly what I am trying to say so what essentially I am trying to say you that that gradial model to a great extent is a good model except for as I say very thin oxides if I see orientation as I already said B by orientation is only you know after what it is the diffusivity of in thick oxide how much is available is going to decide only thinner oxide available bonds will decide available reaction so we know B by A 1 1 0 1 1 is at least 1.7 times B by A of 1 0 0 constants are already given C 1 C 2 you can value out and this is also essentially the ratio of bonds of 1 1 1 to 1 0 0 so initial oxide will be thicker for 1 1 1 compared to 1 0 0 by 1.7 time afterwards why they it will not this because availability of oxygen is going to decide and not the rate so then 1 1 1 and 1 0 0 will have same thing as diffusion limitations but initially available bonds to react at a given temperature will be decided by which kind of planes you have okay we also have in real life polysilicon as gate and we will see that later the growth of oxide is different from poly compared to crystallines we have not done poly so far so I do not want to prion but just for the heck of it I may show you something which is of see poly crystals say let us say this is crystalline but its orientation is different at different XYZ okay they are crystallites but they are many of them poly large numbers so in this part they may be crystalline but their orientation will be different compared to orientations here and here some may be larger crystallites some will be smaller the line between two such crystallites is called grain boundary each crystallite is called grain so these are our grain boundaries that is two crystallites are meeting at that point that is called grain boundaries now grain boundaries that do not have crystals there okay so it is like a void in the system okay so if you push something it may not go through oxide crystallite but may actually go through the grain boundaries so more and more atoms may be possible to be oxidized because much of the oxidant now will not necessarily go through silicon or silicon dioxide layer on the top but through grain boundaries and react okay so do you expect thicker oxide for poly because deeper at least thicker oxide because it will oxygen can go deeper in the poly crystallines poly oxide is a many crystallite and hence many grain boundaries oxidant diffuses faster through the grain boundaries leading to enhanced oxidation rate and the model which is suggested is a e to the t to the power n where a is a fit constant n is also fit constant so we say okay this is the law poly oxides follow it doesn't follow deal group model it follows another law okay is that okay and why it is so because we are not just studied very strongly the diffusivity through grain boundaries there are many micro crystalline theories some other day if you are really working PhD for that then I will show you how even this model is not correct okay but as of now we will not discuss okay is it okay so we say poly crystallite poly when oxidize it oxidizes thicker compare faster therefore compared to normal or silicon okay and the formalite fits into is x 0 80 to the power n n is typically more than half okay which essentially is closer to parabolic and greater than half is half is parabola so it is slightly higher than parabola faster growth this is like BT okay so as root BT so essentially it is saying if you do that it is essentially parabolic growth because thicker oxide is growing but n is not 5 half but it is larger than half is that clear thicker and there is no thinner oxide because by then grain enough oxidant will be made available and it will be decided only by this available this okay the next effect for us under pressure the crystals are stress leading to enhanced effect whenever you put a wafer inside pressures and there is an experiment done for a water vapor water solution and we actually put a high pressure on that and the oxidation rate gyramans experiment very popular one this pressure effects are coming back in some other way now in in fats as well as MOSFETs what for the pressure we are talking strains okay pressure is essentially stress proportional strain so when the lattice is not matched then it is a strain which is essentially due to the pressure okay of that is stress stress is pressure so force per unit area is a pressure okay so strain is essentially now coming back once again to improve your mobility is okay but in oxide this is not crystalline it is oxide in oxide more bonds are available because under pressure lattice is heavily pressed and it breaks section it is lattice velocity is not 100 percent so more oxidation is possible so a formula was figured out in linear growth regime b by a at any pressure is b by a atmospheric pressure times p to the power n typically the pressure which we used by gyraman earlier was 1 to 3 atmospheric pressure and n was found to be 0.7 to 0.8 again fit function so all modeling people very happy they fit experiment data fit okay then you can say that I could have fitted something p should be some numbers n should be some I can fit any in such combination but I know roughly that how much pressure I can put actually before it actually breaks so I figured out up to 3 atmospheric sustains okay so I fixed as value in between and for those values how much n it can fit to the data so some physics were brought afterwards after I really see what is happening I say okay which is not true because there are n combinations I can make out of it okay but that's all models do including person like me then there is an oxidation which many a times we will have to do which is called oxidation due to our impurity is present in the oxide though our impurity present like heavily dope silicon as a different oxidation rate compared to lightly dope silicon okay so there is a difference in growth rates and typically the fitting function for doping greater than 10 to power 9 per c 19 per c c where do you think this numbers will appear which area of MOSFET source drain okay so in source drain the field oxide growths will be thicker naturally because of b by 20 times b i undoped 2 times e by f of p type beta for b is dope is twice b type undoped and b doped is 0.04 times undoped for n and p type this is a fit data again this numbers do not actually matter but close to this numbers can be fitted okay in real life it may become 0.30 0.0385 but it's okay to say 0.0554 okay the real data may not be exactly this number but this is good enough because most of the time we are not very keen we not actually just do by we actually monitor so I know how much oxide thickness I have there okay so I may not make mistake in future this but to model I cannot do very very accurate models if I had to then water every time I get experiment data for the lab I will retry to fit in this and actually get the fit models okay for this lab for this furnaces this everything I know this data which may not be universal only for this people okay this is how all people do we get spice parameters in the circuit simulator all kinds of effects are taken care all physics is introduced by fitting okay what do in the fitting I mean the physics cannot be fit but that is what it happens as long as IV ideas VDS with characteristics appears circuit performance appears who cares whether it is case to the power or not to the power this function fits that is what we want but if I had to understand what is happening then I am a is a mobility dependency is how much is correct okay is the oxide thickness is varying how much okay then I will start VTS constant or not constant how much is developed there so I will now put a physics and since it doesn't fit I will put some constants exponential constants so that it fits to the lab data okay for a given technology then I have a circuit simulator with modified model card okay no one stops me putting my model card so I will put my model card okay that will give me the accurate result okay this is how all designers do whatever actuality and they will fit to a value which fits to the data okay and then of course many of us will like to physics so force physics on it okay but that is more interesting to see before we quit last this all these models since it starts with thin oxide assumption if you are going thin oxide then what is the model okay since we are scaling down the technologies at least below 90 and even 65 the gate oxide thickness is now reducing below 40 Armstrong's and in the 28 nanometer or 22 nanometer it is less than 5 Armstrong's even close to 1 Armstrong 1 Armstrong of course you cannot grow and that was the question asked in your quiz if you scale down technologies the oxide thickness are becoming less than 5 Armstrong's and then there is one monolayer which you cannot grow and therefore you need high k so that capacitance remains constant epsilon a by t so increase one epsilon increase t the ratio remains same okay so use high k okay here we are not talking of high k we are just saying it is reducing till very late we were working on you know 65 even there is a si of two thickness gate insulators have been used below 14 four nanometers I started using nano because these days everyone must talk nano not Armstrong so I also wrote 4 nanometers okay the kinetics of thin oxide growth was not exactly as predicted by deal and grow okay so for example thicker it may still work because then it is not a thin oxide so we are not interested to know something about parabolic because by then it is already thick okay where is the worry the linear portion because there the thickness is smaller okay so we figured out that if I see the grow deal model and if I see the actual thickness it is somewhere different slope which essentially means thinner oxides do not follow exactly in the very thin oxide regime the deal grow model to reduce the oxide thickness what should I reduce one is of course time but time cannot be one second okay I mean you can push and take out you can do so we will put some minutes so what can I reduce temperature so I actually reduce the temperature I do not go oxide at 900 1200 but I do it at 800 possible you can say why not 600 there is no reaction the reaction minimum temperature for SiO bond to form is it at 800 so the thinnest of oxide can be grown around 800 degree centigrade which is around 1073 degrees Kelvin okay please convert everywhere into Kelvin's okay so then there are models which are available in market quickly will show you and so is that clear to you for a thinner oxide regime this is what we see this is what grow deal predicts one of my PhD student way back in 80s did this work which model I will show you later there is a first model which appeared was Risman's model which has some modification they did x0 at plus Tn to the power this Tn is a fit parameter okay which is essentially Xi by A A and B are constants okay is a fit parameter Xi is also fit parameter get the data and fit it into this model and we say okay Risman says if you grow this and fit into this it will fit okay so fit get AB and Xi from the actual data and use this model for your lab okay for your CAD tool okay you can see everywhere what we are doing is fit okay so someone should say is it B by A or is it what no I do not know what is it it is A and B then there was a hand and hands model which he says there are two parallel reactions are going on in this so he says B1 upon 2x0 by A1 and B2 upon 2x0 by A2 now this you have this B1 B2 A1 A2 as fit parameters and try to adjust x0 versus time using these two parallel terms okay so this doesn't fit the data you add from here some term and see it may be minus as well sin B2 may be minus depends on the fit you want and you see that it fits to a other level data okay this is called hand and hands model the most important model which except which was accepted for quite some time was from Plummer and his student Masood and Masood has the best of data as well in way back in 90s Masood published much of the experimental data for thin oxides as well as to thick oxides but and his data has been taken as the most standard data by almost all industries this was work done in what Stanford okay then Masood and Plummer has a model they say okay the second term instead of B2 by something they had added a term called e to the power exponential x0 by L again true and they expected that the L value which they will use should be less than 70m strong beyond which this is not valid thicker oxides so they added another parameter here C and L to fit the data and that is that was accepted for many years rather even now if the first attempt is to use Masood's data and Masood Plummer's model we also did some more kinetics on that for thin outside our work was published in jab 1989 Mysel Vasi and Moorid my PhD student so we suggested some equations that S is called the available site there is a term which we created called site so we say oxidant plus site may form a oxygen site combination oxygens O2S plus another site may form 2S at with a constant I mean proportionate constant K2 reaction rate constant then we say Si plus Si Si bond will react with OS to form Si O Si bond and create another site and that is how oxide will keep growing thin oxide will come we also introduced many constant in this expression P is some constant omega into silicon silicon bond times N K3 into K1 K2 these are called constants of reactions Q is K1 and R is K1 K2 this of course those who are very keen can see our paper of 89. We fitted this data for 800 degree and 900 degree centigrade with the Masood experimented data which he published for different pressures but 0.1 atmospheric pressure is the best result they claim so we fitted our model to this and by making a proper choices of K1 K2 also we derived what values we should have and based on our analysis of this we could get PQR values which fits into thin oxide so we could fit data up to 20 angstroms of oxide thickness below 20 of course our model also did not fit 20 to 40 angstroms or 60 angstroms our model fitted very well with the experimental data then known okay. So if tomorrow someone wants another model you can always try something so you should be able to find some reactions what should be the real materials going on what bonds can it create what is the binding energies available what is the space charge around so there are many things which you can think and add on to a model okay is that okay so this finishes the modeling part next time we will do oxidation techniques and characterization.


What's going on everybody got Kalamath here relating sports cards are up in three boxes for Andrew P All three gonna be tops chrome MLS. Good luck. Good luck. Let's see. We got guys Yeah tops chrome MLS just came out we're looking for some messy color here No autos, but uh messies got short prints got color Fun chase. Good luck. Good luck crazy play There he is immediately refractor is Leo messy there we go Andrew that'll work How to work very nice good start on the refractor messy immediately found him immediately found him first pack That'll work Look at Andrew. Let's keep it going. Keep it going. There's a rookie Giacchini St. Louis and Dan Campbell was not happy. No Petro Hey, that was quick that was quick. Let's take it got a blue mini diamond of 199. That is needs go to Yaroslav Jonathan Lewis Rookie Goma Derby Diamonds Matt House To 199 is Teenage Teenage Habibi or Hadebe Hadebe Teenage. That's an interesting first name. Interesting. His name is Teenage. Yeah, Bobi say Yeah, see the llama Now I can start for me and yeah, he blew it up dude I could start for me. There's a sung-bin Jong nice one there from Minnesota the 25 on the pitch progies The orange Yeah Yeah, I'm done. They scored a hundred They scored a hundred together Insignia. Yeah, he's on. He was one of the biggest signings in my last act So there's a Kamal Miller to 50 for Inter Miami on the gold mini diamond. Yeah, he was a big signing for a Toronto Paid a good bit for insignia. We're gonna our Costa Reinson 99 it's going to be Darren Yappy. It's like Jake's dog green lava Yappy dog Travis Kelsey still number one tight end today Right See Fuentes just don't give up LaForda saving on the last drive even though they didn't end up scoring You got like nine points in the last drive There's Eric in car on the rookie to 199 for Orlando City. Well, how he's a rookie who's been on Land of City for like four years How's it the tavern for five hours last night you know, it's tavern. Here we go. He's go to How's that Jace? Triggered some twisty tees There's a speckle rookie of a kutzius For Chicago fire. Hey, what's up Nicholas Nicholas morning, sir darling tonight. Be there's a song been jumped to 125 Rookie lava. I hope everybody's having a good day plans for later Two Mountain Dews. Let's go. All right, Quinn Sullivan and Obed Vargas. You're feeling yourself hot Tavern, let's go Then Bender and nice or to 25 on the Perler's short print is Julian Caron's up. I love these Perlers, man These are sick a little bit of a thicker stock their short print of 25 Caron's up for the Union. We're any guys. There's one box them Good luck Andrew box to jacked up on Mountain Dew. I feel you Jace Really on that. Hey, happy New Year's Eve to you too, sir You see the trash list yesterday Nicholas got the 20 person list who's actually your idea. There's a burning krag refractor rookie worked out worked out They fit all the all the trash all the trash on one list so much trash So much trash green louder 99 rookie is a long way Can you pronounce that first name for me, please? No Sango Kool-Aid works. Oh You're there for a little party. I got you. There's a nice Sergio Busquets former bar barcelona player to 125 Aqualava You're 15 not bad. Not bad Throughout the whole year. There is the 199 gonna be Dennis Boanga or the blue wave 199 Lucho Acosta Thor Halson Refractor is a Pris Belko I'd have to look it up mole, but I believe a couple days ago We were looking there refractors go for like around 40 or so. I think they were running so any color would be really good There's a Bryce Duke to 99 on the green auto Montreal Bryce Duke any color any short prints boxes are affordable to their 89 99 so not bad Andre Pirlo There's a greenie 99 to petro rookie there for DC United There's a couple of legends autos too. We hit a Stoichkopf auto we've hit Wayne Rooney out of here so far. There's to 199 gonna be a Ramiro Enrique Got some pretty cool legends names on the set see Fuentes O'Toole Yeah, Pirlo is actually in the set to a couple of the different guys who Ended their careers here to 199 got a Zawatsky Shwein staggers in the set so a couple of different guys who ended their career in the MLS There's a future stars Danny Lava short print there only about one per case and then a Brian O'Hata to 75 on the green Like that throwback for rail Salt Lake It's now Paul. It's over on a fanatics. It's now It is on fanatics to 199 we got a Kai Wagner for Philadelphia A lot of color in these boxes a lot of color Yeah, I noticed that the other day for sure The first case we open had a ton of oranges and golds. It was really like stocked. Here's a Ashley Cole flashbacks for the galaxy The flashback sets one of my favorite probably some cool names on there box three Yeah, I don't know if he's going right in order. I think he has to go in order on fanatics So I don't know if there's a way to see Each individual which orders came first, so he might he might have to go one through one hundred on that I'm not sure if there's a way to see which orders came first Alright box three. Good luck Andrew Lucky Andrew again guys got about an hour. So probably a little bit over an hour If you guys do want to get an order in before I'll get it ripped for you It's probably about an hour and a half or so If you want to order you got plenty of time today. There's a Golda 50 Jeremy Ebo B. Say or the quakes Earthquakes Russell Wilson benched. There's a rookie servata pitch prodigies Trying to dump him. Yeah It's probably the 125 Miguel Perez for St. Louis Garcia refractor Matt house Otto is gonna be Thomas Williams for Orlando City Go Lions on the refractor rookie auto Orlando City Fractor is Nico Lidero. Let's ride the badge That's right The last year there was so many of those. There's a refractor of messy Strikers insert So many of those last year man when they were just off. Oh my god The let's ride was not a it was not a good way to start the season. It didn't work out Didn't age well for a roll Russ It's a 99 we got a Obed Vargas nice one their color match out of Seattle rookie Obed Vargas Fractor Padoia is a green a 99 rookie Marco and gulo for Cincinnati to Petro 299 is teenage Teenage That's almost there Almost there. Okay. Okay. It's Magnum. It's the Petro Another pearlers it's gonna be a pearl of Julian Caranza. So in there had the orange in the last one now We got the base Short print pearlers. I got you Jase. Have a good one, sir. Hey, Jace. Have a good day, sir Is it a Bobise and speckle rookie is no albac?  Andrew that will do it that will do it for your three boxes of tops chrome MLS Thank you so much, my man. We'll get those right out to you


So as the first wave of the COVID-19 pandemic spreads across the United States, where places like New York have passed their peak and are settling down, we're seeing surges of cases and new hot zones form in states in the South and the Southwest. Now as we're seeing these resurgence of cases in these new states, we are again seeing this debate about mandatory face masks. Now we saw these mandatory face mask policies in numerous countries abroad and in hot zone states such as New York City at the start of the pandemic. Now there are ongoing questions about the true efficacy of these masks, about how mask wearing policies are infringement on our rights, and even some people claiming that wearing masks causes harm. Now I ask myself, why is this such an upsurgence of this sort of anti-masker movement? And I get it, since this pandemic started there's been so many unknowns, there's been so much redirection and changing of recommendations, there's been very poor communication from our leadership and our healthcare organizations, so people are frustrated, they're fed up and they question everything they hear, and they want to seek out their own facts. Let's talk about this a little bit. Where is the evidence that public face mask wearing actually helped prevent the propagation of COVID? And it's true, the evidence is all over the place, right? There is first of all very low quality data in general, and depending on which camp you're on, if you're the pro mask camp or the anti-mask camp, chances are you're going to find some data out there that says masks may not do anything or masks may help. And the reality is we're never really going to get high quality evidence to prove whether or not mask wearing to the public is going to definitively affect transmission of COVID. So we got to analyze what we have to the best of our ability, balancing both the risks and the benefits. Now I'm going to get to the evidence angle in a second, but for now let's go over what we actually know for sure. One thing we certainly know about COVID, it is a rapidly spreading and very infectious virus. It spread across the world very quickly and made a lot of people sick and killed a lot of people. There is no debate about that. Secondly, we also know that there is an element of asymptomatic transmission. That is, there are people who are infected with the virus who either have not had symptoms yet or pre-symptomatic, or there are people who've gotten infected and may never have symptoms. And there's definitely a component of transmission that's occurring in that population. Finally, we know that contracting COVID-19 infection has to do with the concentration of viral exposure.  We also know that the virus is transmitted primarily through respiratory droplets. That is, pieces of saliva and spit and mucosa from your nears, your mouth, where the virus will sort of hijack these particles and carry over to other people to infect them. There's also a component of aerosolization or airborne infection where the viral particles could potentially hang out in the air after someone's coughed or sneezed or even talked for a short period of time. So based on this, if we can reduce the concentration of viral particles transmitted through someone's oral and nasal cavities to other people, we could potentially reduce the rate of infection. What exactly do we know about masks? Well, first of all, we've been wearing masks in the hospitals and during surgeries for a long time. And it has been proven time and time again that the masks are an effective barrier to prevent the transmission of infectious material. Now, even though they may not reduce it to zero, no matter what type of mask you wear, whether it's a cloth mask, a surgical mask or even an N95, it can significantly reduce the spread and the distance of spread of viral particles from the wearer of the mask. There are several studies that actually evaluated the efficacy of masks when a patient who has a potential virus is coughing and how much that viral particle will be expelled into the environment. And it showed that when you're wearing no mask versus a cloth mask versus a surgical mask, there is a sequential decline in the distance that the viral particles will travel and the concentration of those viral particles. So again, not zero, but it mitigates it. So based on what we know about the properties of the virus and how it's transmitted, the fact that face masks do provide some sort of a barrier for transmission and combine that with a little bit of common sense, it seems that wearing masks would be effective or at least provide some benefit, even if it's marginal. Then the question comes, do we actually have data that face masks would reduce the transmission of a virus during a pandemic or specifically in COVID-19? Now, whatever camp you're on, chances are you're going to find some trial that either shows masks don't do anything or masks may do something. The trials are very heterogeneous, they're all around the map, mostly observational low quality data. However, several of those studies do suggest a potential benefit. Now, I would argue even a potential benefit across a few trials is enough to implement such a policy if we think that it could be effective, especially when wearing masks does not have a lot of harm. Now, one study that caught my eye was recently published in the Proceedings of the National Academy of Sciences and what they did was they looked at Wuhan, China, Italy and New York City in the United States and what they did was plot out the rate of infections per day and they sort of overlay that with when certain measures of mitigation were implemented, such as lockdown the country, stay at home orders and mask wearing. Now, if you look at these curves, if you look at Wuhan, as you can see they had an early surge of infections but they were able to flatten their rate very quickly and again over there they had a lot of simultaneous aggressive measures including quarantine, lockdown, contact tracing, mandatory mask, etc. Now, if we go further down and we see Italy and New York City, here we can see Italy where around March 5th when they started to search. Okay, and here the first line is when lockdown occurred, then you see the lockdown orders and still the curve persisted. Okay, it was not until this sort of round black circle you see when face masks were made mandatory did you see the curve inflection start to occur. Now, let's look at New York. In New York again similarly they had social distancing orders followed by stay at home orders. Despite that the curve persisted and then when mandatory face coverings were ordered you can finally see the curve then started to settle down. Next figure this is plotting New York City versus the rest of the United States. Again, sort of showing the same information in a different type of chart showing daily cases you can see despite social distancing and stay at home orders the number of cases continued to persistly rise both in New York City and in the United States. Finally, when you see mandatory face coverings occur in New York City that's when you're seeing a steady decline of cases and you see the rest of the United States persistly elevated. So based on this data it seems very likely that the face mask order did make a difference and in fact it seemed to make more of a difference potentially than social distancing orders in stay at home orders. Of course it's possible that when that mandatory face mask order was given people in general realized that wow this is a big deal and maybe they're just being extra cautious with social distancing being extra cautious with the hygiene and just not going out and interacting as much so that sort of surrogate effect may have played a role as well hard to know. Now despite the lack of definitive data I would argue we have enough data to make us optimistic that mask wearing does help and it comes with very little downside and of course it's going to be a finite period of time where we're doing this so why not why not just wear the mask and suck it up for now. Now I get it nobody likes to wear a mask I mean I hate wearing masks I don't like the way I breathe in it it's uncomfortable you know you can't really recognize people there's you know no social cues and of course nobody wants to wear them but we do it because it's probably the one thing that we can all do to contribute to the slowing of this thing and finally there is this narrative being pushed that mask may actually cause harm. Now first of all there's no data to suggest that yes it's uncomfortable yes you may have a sensation of shortness of breath but unless you have like severe underlying lung disease or you're acquiring oxygen wearing a mask is not going to reduce your oxygenation you're not going to build up with carbon dioxide you're not going to increase your risk for pneumonia or fungal infections all these things there's absolutely no data to suggest this. Let's just look at the hospitals right now we've been wearing masks in the hospitals forever and that's because we know that wearing a mask reduces the risk of us transmitting our germs to our patients we're wearing masks throughout the whole day last I heard there was no health care workers or doctors or anybody indicating that you're getting sick from wearing their masks in hundreds of years so the notion that masks are harmful is bogus certainly if you were going to go under the knife for a surgery you would want your surgeon to wear a mask am I right so why should we ask less of anybody else in the public during a pandemic if it means reducing the risk of transmission and the health of other people in the end we can have this debate ongoing will we ever have a hundred percent answer no but come on what is the big deal if there's even a small chance we can reduce the rate of infection in the spread of this disease so if you're in a surging region right now the mitigation measures that we know work hand-washing you know social distancing and wearing a mask so please please just for now just do it


Now time for Member's Statements. The Member for Elton, Middlesex, London. Mr. Speaker, Speaker, I'm pleased to rise today to discuss Men's Cancer Health Awareness Month. The month of September is a time to highlight the many different types of cancers that men may be susceptible. The load was impossible to determine a cancer diagnosis in advance. Men should be cognizant of the top five cancers most susceptible to them.  Prostate cancer is the most commonly diagnosed cancer among Canadian men, resulting in 24% of all cancer diagnoses. One in eight Canadian men will be diagnosed with prostate cancer in their lifetime, and it's estimated that 4,100 men died from this disease in 2015. Other shocking statistics include one in 12 Canadian men are expected to develop lung cancer during the lifetime, and one in 13 will die from it. One in 14 Canadian men are expected to develop colorectal cancer, and one in 29 will die from it. One in 27 Canadian men are expected to develop bladder cancer during the lifetime, and one in 82 will die from it. And one in 57 Canadian men are expected to develop melanoma during their lifetime, whereas 227 will die from it. Mr. Speaker, the best preventative is a healthy lifestyle. The Canadian Men's Health Foundation runs a campaign called Don't Change Much. They emphasize small but critical changes that men can make in their day-to-day lives. It's a simplistic message, but it leads to healthier lifestyles and better outcomes. Thank you very much, Mr. Speaker. Thank you. Your member's name is the member from Oshawa. Thank you, Speaker. The Durham Region Employment Network, or DREN, has been helping people in my writing for 23 years, helping folks who want to participate in their community's economy but face multiple barriers and need additional support to find work. Sadly, DREN is facing closure due to lack of funding from the provincial government. This is a government that talks about accessibility and pretends it is a priority for them, but can't commit to a grassroots community agency that has been recognized by David C. Onley and meets very real needs in Oshawa. Last week, I had the opportunity to meet with Donna McAllister, DREN's executive director, and she asked me, when the agency for helping vulnerable people find jobs has to close because the government won't commit to funding it, what does that say? Well, Speaker, that's a great question. What does it say about the importance this government places on accessibility services? The never-ending precarious merry-go-round of project funding, apply, wait, wonder, call, hope, call again, email, hope, wait, rinse, repeat. That's the model that this government has established to fund our frontline service providers. This government can say that accessibility is a priority, but actions speak louder than words. We need sustainable funding for DREN and real commitment to support youth and all workers with disabilities. I support DREN, my community supports DREN, and I call on this liberal government to finally commit to sustainable funding for an organization that helps those that need it most. Thank you. Thank you. Member Stainless, the member from Barrie. Thank you, Speaker. On Saturday, September 17th, I attended Barrie's 7th annual Walk a Mile in Her Shoes fundraiser in support of the Women and Children Shelter of Barrie. This unique event was founded by men who hoped to raise awareness about sexual and domestic violence by doing the walk in women's heels, and it now takes place in cities all across North America. This year's walk in Barrie was the most successful ever, as approximately 300 people from all walks of life braved the rain and helped the shelter to raise about $40,000. Every year, over 200 women and children stay at the shelter, and another 1,800 are served through their community outreach programs. This is just a fraction of the 30,000 women and children in Ontario who seek refuge in shelters every year. This is why I'm proud that our government funds 2,000 beds across 96 shelters where no woman in crisis has turned away. We have increased funding to help victims of domestic violence by 61% since 2003, including a $20 million joint federal pilot project announced earlier this month to make it easier for 1,000 survivors a year to find safe housing. Mr. Speaker, I would like to thank all the walkers and the volunteers who came out in Barrie and across the country to support victims of domestic violence. Thank you. Thank you for the member statements, the member from Leeds, Brimburg. Thanks, Speaker. Recently, I was honored to participate in the Ontario Federation of Snowmobile Clubs annual general meeting. It was great to meet club representatives from across the province and to show our Ontario PC caucus support for these incredible volunteers. Snowmobiling generates more than $1.7 billion in economic activity in Ontario annually and supports 7,200 full-time jobs. The tremendous economic impact wouldn't exist without the dedication of OFSC clubs, including five in Leeds, Grenville, the Athens and District Snowmobile Club, the Elizabeth Town Snowmobile Club, Grenville Snowmobile Association, the Kempville Snowmobile Club, and the Rideau Ridge Runners Snowmobile Club. The AGM's highlight for the Leeds-Grenville contingent was seeing Jim and Maureen Fenlong of the Athens Club named OFSC's 2006 Family of the Year. I can't think of a more deserving family speaker. This incredible duo has logged an amazing 45 years of volunteer service from organizing events, fundraising, trail maintenance, signage, grooming, and 28 years as treasurer when there was a job to do, Jim and Maureen got it done. They did it for their love of this time-honored Canadian activity, not for recognition. And it was great to see their moment in the spotlight. Congratulations, Jim and Maureen. You're truly showing what it means to give back. And I also want to thank OFSC just quickly. I want to thank them for the opportunity to come to their AGM, and I wish all Snowmobile clubs the best for the winter ahead, and I look forward to working with you to make those trails even better. Thank you so much. Thank you. Senator, member Sanders, the member from the Winter to Come seat. Thank you, Speaker. This may seem a little bit like Deja Vu, but once again, Bibli oasis, an independent literary press in my writing, has published a finalist in this year's Scotiabank Giller Prize. It's The Party Wall by Katharine LaRue. The book was translated in English by Laser Leader-Hendler. Speaker, as you know, The Giller is the most prestigious and the richest of all Canadian literary awards. All six finalists receive $10,000, and the winner gets the top prize of $100,000. The Party Wall is already the winner of the Distinguished France Quebec Prize, and has been nominated for the Quebec Booksellers Prize. Last year, Bibli oasis had two books chosen as Giller finalists, and at Count of Schofields, Martin John and Samuel Archibald's Arvita. The small independent publishing house also had another book in this year's Giller long list. That was The Two of Us by Kathy Page. This year's Scotiabank Giller Prize will be awarded live on CBC Television on the 7th of November at nine o'clock. Since 2004, Bibli oasis has been publishing the very best in contemporary fiction, non-fiction, poetry, and literature in translation. So Speaker, congratulations once again to Bibli oasis publisher Dan Wells, his very talented staff and colleagues, and to Kathleen LaRue for the Party Wall, and good luck with this year's Scotiabank Giller Prize. Thank you. Speaker's book award's pretty good too, you know. The member statements, the member from Kingston and the Islands. Mr. Speaker, earlier this month in my riding of Kingston and the Islands, we celebrated the Kingston Multicultural Arts Festival. This festival is one of my absolute favorite events of the year because it offers an incredible opportunity to actually experience and celebrate in the rich culture and diversity of the Kingston community. The festival was organized by the Kingston Immigration Partnership, which continually strives to make our community more welcoming for immigrants. While participating in all the activities and events the festival had to offer, it was clear how the celebration is truly a part of our community's continued effort to make Kingston inclusive and welcoming for all newcomers and to ensure that they feel at home in our community. With approximately 5,000 visitors and 20 ethno-cultural associations participating, this year's festival was one of the most successful to date. I was absolutely thrilled to see a Syrian booth this year and it was incredibly heartwarming to see how much pride they have in their culture and how many people attended at their booth. Every booth was swarming with people indulging in delicious food, admiring traditional costumes and sharing stories of shared culture abound. And of course, I would like to extend my sincere appreciation to everyone who shared and showcased all of the unique aspects of their cultural identity with our community. It is because of the hard work and dedication of our community that this festival was possible. Thank you. Merci. Miigwech. Thank you for the member statements, the member from the Pean Carleton. Thank you very much, Speaker. Every four years in this place, we see career election. But every four years around the world, while we celebrate the Olympics, the goodwill that comes with it, this past summer in the Pean Carleton, we had two tremendous world-class athletes compete in the Olympics in Rio. Seiku Cabin, the 110-meter hurdles, and Erica Selton-Rachachan in the 200-meter individual medley. We had a grand send-off speaker at the Bar Haven Legion with over 150 people. Seiku appeared live, while Erica, who had already landed in Rio, joined us to talk to Seiku via Skype. It was incredible to see the kids there wearing the red and white and cheering for our country. We had viewing parties with their friends, their families, and their fans, and they were incredible, and I thank Boston Pizza and Bar Haven for hosting them. But more importantly than just being a tremendous athlete, Speaker, these two young athletes, Seiku Cabin and Erica Selton-Rachachan, have tremendous character, proving that sometimes a gold medal is wonderful, but having a heart of gold is more important. Two quick stories before I finish, Speaker. Seiku Cabin joined me on Canada Day at 13 events in the Pean Carleton. At each one of them, he ran with the kids, he did hurdle demonstrations, and he proved to them that giving back to your community is probably the best thing you could ever do as an athlete or just a member of your community. And secondly, Speaker, Erica Selton-Rachachan, as a young woman in her early 20s, indicated that she had battled depression, and I got to meet her as she spoke at a women's mental health run in Ottawa. Their courage, their conviction, and their talent make them Olympians in my heart forever. Thank you, Speaker. Thank you. Thank you very much. For the member's statements, the member from Niagara falls. Thank you, Mr. Speaker. Yesterday, I had the privilege of being with Andrew Horvath, our leader, and the university students from Niagara in a round table at Brock University. You'd be shocked to hear what these students are going through because of their student debt. Some of them are working two and three jobs to try and avoid a debt they won't be able to pay back. The stress is unbelievable. You can see they don't even have the time to enjoy their young lives because they're working so hard to either avoid debt or pay it back. To make matters worse, once they graduate, they can barely find a job. Mr. Speaker, we need to take this opportunity to help our young people succeed. The lives of our children and grandchildren are supposed to be better than ours. It is our responsibility to create a better world for them. I was moved by what these young people had to say, and I want to tell the Premier this, you need to do a better job at creating opportunity for these young people. We told them to work hard and get an education that so many people in my generation never had a chance to. So they did that, and now they have no job and a debt they can't pay. Mr. Speaker, this government made over $25 million in interest from student loans last year. The government should not be profiting on the backs of our children and our grandchildren. I urge this government to stand with the NDP in removing the interest for student loans, reducing our skyrocketing tuition fees and actually creating job opportunities for these young people who are working so hard to make a better life for themselves. Further member statements? The members from Brenton Springfield. Thank you, Mr. Speaker. The Biana Family Foundation Awards recognize extraordinary contributions made by frontline staff workers who work at the United Way in the Peel region and other funded agencies. These peer-nominated awards showcase a remarkable dedication, creativity, and team spirit. The awards are made possible thanks to generous donation from Rockshaw Biana and the Biana Family Foundation. As a former member of the United Way of Toronto's Board of Trustees, Rockshaw is a dedicated community volunteer and a passionate champion for the recognition of frontline workers who make a difference in the community every day. Rockshaw Biana and her husband Madan were immigrated to Canada in the mid-1970s. Rockshaw took on her first job in Canada as a therapist and learned about the United Way through this. The Foundation currently works with the United Way in Toronto, Peel, York, and the Lower Mainland in Vancouver. They are not just a funder, but a mobilizer of community and social action. Madan Biana achieved the Canadian dream with his business in state. The 2016 Biana Awards were presented to recipients in June to acknowledge the achievements in each of the following categories for the total for each category. The dedication awards, the innovation and creativity awards, and the leadership awards. Melissa Luca, Nexus Youth Centre, Jin Zhang from Spectra Healthline, Stacy Lynn Sterling, March of Dimes, Canada, all received the dedication award where Commissioner Thomas from Vita Centre and Kelly Remney from Caledon Parent Children's Centre received the leadership award. And in innovation and creativity, Nirpal Bangu from Punjabi Community Health Services, Mona Fateh from Newcomer Centre of Peel, and Carol Medhurst from Caledon Parent Children's Centre were recognized. There was also a dedication award for the United Way staff, which was awarded to Ma'am Debra, coordinator of the Black Community Advisory Council. Thank you, Mr. Speaker. Thank you. I thank all members for their statements. It is now time for...


Republican Stuart Mills says he will request and pay for a recount of votes in the northern Minnesota congressional district race he lost recently to Democratic U.S. Representative Rick Nolan. Mills lost by 2,009 votes out of 356,971 votes cast in the eighth congressional district, or about half a percentage point, which is too large to trigger an automatic recount. Mills told the Minneapolis Star Tribune in an interview that he is not alleging voter fraud, but believes there are enough questions to merit a recount. Now, Nolan's campaign manager Joe Rodinovich disagrees that a recount is needed. He said the outcome is unlikely to change. The sprawling district was one of those in rural areas targeted by Republicans in the past election. If you've enjoyed this segment of Lakeland News, please consider making a tax-deductible contribution to Lakeland Public Television.


Hi, thanks for viewing another 12pm tutorial. This tutorial will teach you how to install and use JAP, the John Doe Anonymous Proxy. The primary purpose of this program is to hide your identity from the websites you visit, your internet service provider, and anyone who is watching your internet connection. JAP does this by using a system of mixes to scramble your information with the information of other JAP users before it reaches the internet. When you turn on the JAP anonymity service and then request information from the internet, your request is encrypted and then filtered through a number of mixes called a MixCascade, which rearranges the identity of your connection by mixing it with bits and pieces of other users' identities. The final mix in the MixCascade then decrypts your request so that you can view the information you wanted anonymously. Now that you know how it works, let's go get the software. The address for the website is kind of long, so just open up a web browser and go to your favorite search engine. Now type in JAP and look for a site called JAP, anonymity and privacy. Once you find it, click on the link. On JAP's website you can read about the software and how it works. Go ahead and explore the website before we move on with the tutorial. Once you're done exploring, take a look at the right hand side of the page. See the link under download that says stable version? Click on that link. Now you have to choose the stable version you want. Since we're using Windows for the tutorial, let's click on the Windows link. Now you have the option of downloading JAP setup.exe or the complete setup program. Let's download JAP setup which will take a look at your computer and download what you need for the program. Go ahead and click on JAP setup.exe and then save it to your computer. After the file has finished downloading, close your browser, go to the folder where it's saved and double click the JAP setup.exe program. Click run. Here JAP asks you what you would like to install. JAP uses Java in order to run the anonymizing service so either check the box for Java 1.3 or get the most up to date version of Java from www.java.com. If you have Java, all you need to do is check the box marked JAP and then click next. Choose where you want the program to install and then click next. Choose the name of the start menu folder and then click install and wait for the program to finish installing. The speed of the installation process will depend on your internet connection speed because JAP will be downloading necessary components. Once the installation is completed, click close. Now go to start, programs, JAP and click the JAP program. When you run JAP for the first time, a window will pop up called installation assistant. This will walk you through making sure that JAP is working properly on your computer. The first thing I'll ask you to do is choose a language. Go ahead and choose a language from the menu and click next. Now you get to choose whether you want a simple view for the user interface or the extended view. Let's stick with the simplified view for now and click next. This page tells you that you need to configure your web browser to connect to the JAP service. I'll walk you through how you do that now. First, open up your web browser. You're going to use internet explorer. Now go to tools and then to internet options and then click on the connections tab. Click the land settings button. Check the box that says use a proxy server from your land and then enter local host in the address box and 4001 in the port box and then click OK. Click OK again, minimize your browser and go back to the installation assistant. Click next. Now JAP wants to run a test to see if the service is working correctly. Move the installation assistant out of the way and turn off the anonymity on the John Doe user interface. Now go back to your browser. Try to visit a different website. I'm going to try www.nytimes.com. If JAP has configured correctly, you should see a warning box alerting you that you are not anonymous. When the box pops up, click yes. If the website shows up with no problem, go back to the installation assistant and check the option that says the warning is show and then click next. Now JAP wants to switch the anonymity back on and surf the web of it. If you can access the internet without any difficulty, click the option that says connection established, web surfing is fine and then click next. Then click finish. Take a look at the JAP user interface. As you use the internet, it will keep track of your response time, the number of JAP users and the speed that you're accessing the internet at and the amount of encrypted data you have transferred. As an added bonus, if you live in an area where the internet isn't censored, you can allow people from areas that censor the internet to use your connection to circumvent that censorship by clicking the box marked anti-censorship service. To turn the JAP service off, simply click exit. Remember that the browser you configured to work with JAP will not work without the JAP program running. You'll need to delete the land setting from earlier in order to use it on its own.