What's up navigation traders welcome to this week's video update today is Friday May 18th Let's jump into the alerts from this week Starting with our first trade on Monday. We did a closing trade where we bought back a strangle in Ford slash 6e We're only in the pot in the trade for 12 days We're able to book a profit over 40% of max profit. So nice trade there We'll go to the platform on 6e here in a minute because we actually re-entered a new trade on a later alert here Next trade was a closing adjusting trade in the QQQ So we closed out our put vertical side as the price ran up and breached our upside break even so we closed the Untested side and then we still had the two sets of short call verticals in May which in the next two trade alerts here We rolled those short call verticals from May to June and adjusted those strikes So did that here and then here as well. So if we go to QQQ What you'll see here is so here are the two short call verticals that we rolled from May to June We've since had some down movement in price. So benefiting those positions. So there's that one and then this one as well Let me reset this and so we had that one and then this one here So very similar strikes but need some more down movement to benefit those pieces and remember We we're keeping these in our portfolio to act as that short bias that short exposure that short delta in our portfolio And then here is the one that I just mentioned from the alert This is the short call vertical that we have left after we took off the put vertical side So you can see price is still hanging out here right right past our break even point So need a little bit of down movement to benefit that one So we'll continue to monitor those Next trade was a rolling adjusting trade in Amazon. So this is a short put vertical that we put on post earnings We just put it on with a really short expiration with just one day to expire initially and at rolling that out to May And then now on this alert we rolled from May to June and this gives us that key It's a long delta trade so helps balance our portfolio We like to have some long delta some short delta some market neutral trades and so we wanted to keep this trade alive and Continue to see if we get some upside You can see since we put that on price has moved down a little bit So could use a little bit of up movement in Amazon to benefit this trade if we look at the chart You can see if we just get a little bit of a bounce up higher What we will will profit from this one. So keeping that trade on as well Next trade was a rolling adjusting trade in EWW where price breached our short strike to the downside So we simply rolled down our calls and we rolled them from 58 54 to 48 still in June with 31 days to expiration. So we stayed in the same cycle So holding the short 47 puts and 48 calls. I'll go to the platform on EWW here in a minute because we did add Another trade there as well Next alert was this opening trade where we re-entered in the Euro implied volatility popped up nicely To over 75 at the time we put this on and since it's actually gone a little bit higher So if we take a look at 6E You can see click on this one here. So you can see it's gone up to percentile is now at 81 So it's actually gone up a little bit higher If we take a look at the analyze tab, you'll see it's still very centered Not much to do here except for wait for a little bit more time to pass Next trade was a closing trade in EWW. So we still had this May EWW strangle on I typically don't like to hold that close to expiration I was trying to get filled earlier in the week and didn't get filled it kind of ran away So with with it getting closer to expiration, we just closed it out Still booked a profit not quite as much as I wanted but still booked a profit on that trade Next trade was an opening trade in the notes ZN So TLT is the corresponding ETF that we look at for IV percentile is at 73 at that time If we take a look at TLT Now on the charts you can see it it popped up even higher and then today it's contracting Nicely, so if we take a look at ZN, which is the actual position that we have on You can see We've got a little bit of profit not enough to take off yet just kind of playing the waiting game here Still very centered so nothing to do but monitor that one Next trade was a closing trade in IYR So we had a short strangle on IYR booked a profit over 40% of max profit So nice trade there if we take a look at At the charts of IYR, which is the real estate ETF You can see implied volatility now at about the 38 percentile. So if we get a pop higher in IV We may look to re-enter that next week Next trade was an opening adjusting trade in ES. So S&P 500 futures we added an iron condor on here. And so if we take a look at ES We've got two different cycles on here The ESU 8 that's the one we just added here. So still very centered nothing to do there and Then the next trade was a closing adjusting trade where we had we still had an iron condor in the June cycle We closed that out booked over 40% of max profit on that piece of the trade So now we're just holding that iron condor that I just mentioned here Going back to that real quick here. We also have in the other cycle We still have that long put vertical that we're keeping on for that short delta in our portfolio So I'm still looking for some downside movement to benefit that piece But that's a totally separate trade from the iron condor Next trade and final last trade was a new short strangle in EWW. So we added a short strangle IV percentile jumped up to 92 today when we put that on so if we take a look at EWW We have these two positions on The one in June, which is the adjusted strangle. So you can see it's kind of moving Moving down now remember after we make an adjustment our next adjustment is not when it hits the break even So what we have to do there is a little bit more manual What we do is we just look at the untested side So if we click off the put so we're just looking at the call, which is the untested side You can see we've got some profit on that side But we really want to wait until this has very little value left in it before we make another adjustment There's still room for that to go to get some profit on that side. So we don't make any adjustments at this point It's we just let it let it go. We're still getting some good theta decay of 1250 a day approximately and So we just hold this and wait. It's in the June cycle, which still has at this point 28 days to expiration So we'll give this at least another week once it starts getting under that 21 days to expiration Then we will roll that out to July or just close it out depending on where price and profits are at that point But then the other piece of this trade is the alert that I just mentioned Which is adding another strangle and we did this in July with 63 days to expiration Which is just slightly out of our wheelhouse We like to be in that 30 to 60 day range But remember we've got 28 here in June So we're not going to enter a new position in June because it's under 30 days So we opted to go out to July collect more credit give ourselves more time And so that one's still very centered nothing else to do there So those are all the alerts. Let's take a look at some of the other positions that we have on Natty gas we've got an iron condor on here got some profit not quite enough to take off yet there Zn I mentioned Zs which is soybeans got an iron condor on in soybeans could use a little bit of up movement To get back towards the center in that one and then wheat we've got an iron condor on here Big move up today over 3% to the upside Got some profit there not quite enough to take off yet in wheat Apple Apple's been a little bit of a thorn in our side. We have this Long put spread on which is a short bias trade for that short delta in our portfolio But Apple's been very strong to the upside So just continue to wait here trying to you know, let the probabilities play out But we may look to roll or just end up closing this one for a loser Depending on where we're at over the next couple weeks here. So we'll continue to monitor that I mentioned Amazon DIA so we've got these two sets of short call verticals here kind of similar to the QQQ We're just looking for some down movement to benefit this piece of the trade again Continuing to keep these on for that short delta for that short bias that we want in our portfolio FX I so this one is pretty close to and actually this one is Now that I'm looking at this I looked at it earlier and it didn't have quite as much profit So this would could come off. In fact, this video will already be recorded. However, I am going after I get then recording this I'm gonna go ahead and take this off. We've had a little bit of Down movement here, which is we're now at 50 per over 50% of max profit So I'll book this and send that alert on that one. So that'll be closed out IWM Iron condor in here just hovering right at our breakeven I'm gonna give it over the weekend Let us see if we can come back into range before we make any adjustment in IWM McDonald's we put this trade on to add back a little bit of long Delta in our portfolio Came down out of our range. So looking for a little bit of up movement to benefit that piece in McDonald's I already mentioned the Q's XLK Another short vertical excuse me long put vertical a short bias trades looking for some down movement in XLK to benefit that one and lastly XRT So XRT we've got this short strangle Price just kind of hanging out in the upper end of the range No adjustments needed yet could use a little bit of downside movement and some more Theta decay to benefit that So that's all the alerts. That's all the positions that we have on I like where we're at We're in a good position here with a lot of different diversified symbols Hopefully we can get some more opportunities next week to put on some new trades Everybody have a great weekend. Talk to you next week


So, we continue our discussion on metal semiconductor contacts and metal source to injection MOSFETs. Last time we discussed the principle of operation of a metal semiconductor contact. We took a case where the work function of metal is greater than the work function of semiconductor. So, this is the situation in the thermo equilibrium and there is a depletion layer in the semiconductor and a negative charge here plus charge in the depletion layer. So, this is because of the because electrons are transferred from the semiconductor to the metal because the phi m work function of the semiconductor is larger. So, the Fermi level there is usually below the Fermi level of semiconductor. So, electrons get transferred from semiconductor to the metal. So, we get this is the distribution of carriers. This is the barrier phi b n. The electrons which have energy above this barrier can cross there giving rise to current I naught. Now, thermal equilibrium there is no current. So, the electrons on this side which are above the barrier here the barrier is V B I. They are crossing here. So, those two cancel each other and we have shown that current I naught or current density J naught is given by this term which finally is A star. A star is called Richardson constant which depends upon the effective mass of electron with respect to the free mass 120 m that is 120 m n star by m naught t squared means various dependence on the thermal equilibrium. Of the current depends upon the barrier rate. If barrier is more this is less term it will be minus phi b n by k t. If the barrier is low this is large current. Now, thermal equilibrium you saw that they are equal number of carriers crossing each other and that is cancelling as J naught. We also saw the forward bias condition I am sorry reverse bias condition where you make this plus. Now, notice the entire voltage appears across the equation here. So, the barrier height which was V B I on this side has increased by V B I plus V R. So, the potential energy of this conduction band here brought down by an amount equal to V R. So, the energy distribution because the electrons do not have kinetic energy here so you reduce the potential energy. So, kinetic energy is up to that particular distance fixed by the temperature. So, these electrons find a much bigger barrier much more than what was there in thermal equilibrium. Therefore, these electrons from semiconductor are not able to cross to the metal. Now, on this is a very important point we must note on the metal side the barrier heat has not changed. This is the difference between the p n junction and the metal semiconductor contact. In the p n junction the total barrier heat changes potentially variation takes this both on the n side and p side. There is no drop in the metal in the case of there is no voltage drop in the metal in the Schottky barrier contact metal semiconductor contact. Since there is no voltage drop the potential here is same the barrier heat is same thing that is the important thing. So, whenever we apply voltage to a metal semiconductor contact if I make the semiconductor plus the barrier heat on the semiconductor will increase preventing the injection of electrons from the semiconductor to the metal. So, whatever you get the current current direction is from plus to minus like that I not that is due to the these electrons which are having energy above the barrier on the metal side. So, these electrons still can cross these do not get confused from the arrow the arrow is for the direction of electrons a direct current. Electron flow is from here to here by convention you know that negative charge if it moves in x direction current flows in a minus x direction. If plus charge moves from the minus to plus current direction is also same thing. So, I m s the symbol is current is I due to transfer of electrons from metal to semiconductor that is the notation. So, this has not changed because this barrier heat has not changed distributes has not changed. So, I not remains the same thing. So, you get a current whatever you got I not there previously whatever I not was coming due to this transfer of electrons from the metal to semiconductor was getting balanced by the current injection from the electro injection from the semiconductor to the metal. But, since that is removed there is only current component due to the transfer of electrons from the metal to semiconductor that is I m s going in that direction and that we have estimated how much it is a star t square d 2 power minus 5 E n by k t. So, this you can say it is like a P n junction almost the magnitude of current will be different decided by the barrier heat 5 E n in this case. So, the in the P n junction reverse bias means n side positive with respect to P side. Metal n type semiconductor same notation if semiconductor is made plus the current flow is from is less and that is the reverse saturation current. Now, let us see what happens if you forward bias that, but please remember whatever bias I apply to this metal semiconductor contact this barrier 5 B n is not going to change. So, the electrons injected from the metal to semiconductor totally decided by how much is the barrier heat, barrier heat. So, how much if the barrier is very low almost all of them will be available for current flow. If the barrier is high very little will be a current flow in this case. Now, forward bias again remember this would not change. If a forward bias thermal equilibrium this 5 a thermal level was the same level see the previous case the thermal level has come down what is the thermal level because entire energy levels have come down, but here on the thermal equilibrium you have made this plus on the metal side this is minus. So, the potential barrier across this which was plus minus because of the plus minus on opposite side that is reduced by B applied. Now, what happens earlier this distribution was just coming up to this end. Now, because of the forward bias the potential energy at the conduction bandage has gone up. So, this distribution remains the same thing. So, some of the electrons which are above this particular line dotted line see dotted line above this barrier can go from left to right electrons whatever electrons are there from the dotted line up to the peak they can cross from the right. So, that there are more electrons now crossing from semiconductor to the metal. Now, how will this current vary? This current varies as J is current due to the transfer of electrons from semiconductor to the metal actual direction is from current flow direction is from metal to semiconductor electron flow is from semiconductor to the metal that is why this is given like that. That is number of electrons on surface into velocity, velocity thermal velocity root K T by some number that we have seen already. So, only n s number of electrons actually will be whatever carrier concentration here is there into e to the power of the potential difference and n 0 is the carrier concentration here where neutral region into e to the power of minus Q barrier now originally it was V B I. Now, it is V B I minus V because of forward bias by K T. So, what is n 0 e to the power of minus V B I that was electron concentration which was present under thermal equilibrium situation at this point. Now, that is raised by an amount equal to V to the power of V B I 2 P by V T. So, what you have to remember is whatever thermal equilibrium carrier concentration was there here it has raised by e to the power of V by V T. So, current has gone up whatever thermal equilibrium J naught was there has gone up by an amount of e to the power of V by V T. So, what you have got is this current due to transfer of electrons from the semiconductor electrons transferring from the semiconductor to the metal that is I m s that remains the same thing, but I s m that is current due to the transfer of electrons from the semiconductor to the metal transfer is like that current flow in that direction that has gone up exponentially.  So, what you say me imply is this current is J naught e to the power of V by V T like in the case of forward bias P n junction diode whatever J naught is there e to the power V by V T and this current is due to that that is presented in the opposite direction. So, total current is from the metal to the semiconductor in fact from the plus side it comes like this battery is driving the current that is J s m current density is J s m minus J m s J s m is J naught e to the power V by V T and current due to transfer of electrons from the metal to semiconductor is J naught itself you subtract that. So, the current is J naught into e to the power V by V T minus V T plus 1 this is what I have written here like exactly like the case of diode there is no difference. The only thing is the J naught term in this case will be different from the J naught term in the diode case we will see what it is. Once again remember this barrier heat has not changed because of forward bias because of forward bias the current flow has increased because of increase in electron injection from the semiconductor to the metal. In the case of p n junction the current increases because of whole injection from p to n and electron injection from n to p. But in this case whatever electron injected remains the same thing that is this quantity remains the same thing J naught. So, it is the this component which is actually a kind of due to increase in the electron injection from semiconductor to the metal. In the reverse bias direction only that J naught is there which is due to the injection of electron from the metal to the semiconductor there is nothing from semiconductor injected. Please note if I have to have electron injection from the metal to the semiconductor whatever electrons are there above this barrier can only inject. If I want to increase that electron current injected this is important for MOSFET action. In the MOSFET n channel your n plus source which injects electrons here your metal if it has to inject electron to the channel n channel this barrier must be small because only those electrons which are above the barrier can get injected whatever is here is going in the opposite direction. Let us see that now if it is a reverse bias if the potential you reduce here this cannot inject electrons back this is the theme of basic ground for the MOSFET. Now just see the I V characteristics J naught depends upon J naught depends upon H dot T square root minus 5 B N by K T. These are constants for a given temperature it depends upon 5 B N. So, I V characteristics it is a rectifying diode J naught is small if the barrier head is large number of electrons which are having energy above that barrier is small. So, high barrier head which you get when phi m is larger than phi of s for n type semiconductor you get a rectify you get I is equal to I naught into a V by V T and I naught will be low will be low because I B N is large that is the J naught and the current is exponentially increasing. Now if the barrier head is low the reverse saturation current is large I naught is large if I naught is large I naught into that quantity is large. So, this is the characteristic of this diode with a smaller barrier head. So, if a larger barrier head is there you get good rectifying junction very large barrier head you can get the current reverse current close to 0 or none over to pico. High barrier head there will be large current in the forward direction exponentially increasing reverse bias current will saturated J naught a large value of J naught. I naught is high when phi B N is low which is the one that you may be looking for in a MOSFET action because I naught in the reverse bias condition is due to injection of electron from the metal to the semiconductor. Now, let us have a more detailed graph there are number of graphs I have plotted here large phi B N I naught is low as increase the phi B N reduce the phi B N reverse current keeps on increasing in the reverse direction this keeps on increasing on the positive side even the smaller v applied voltage will give large current smaller phi B N the current is like that in that same graph I shown number of them keep on reducing phi B N you get more and more current and you see ultimately when phi B N is very low if you look at the characteristic at the source end that is a most linear there that is voltage drop is very little you can have large current flow that is close to an ohmic contact.  Now, what you have said is phi B N is phi M minus chi. So, if phi M higher you must get lower barrier head more closer to rectifying ideal rectifying characteristics. So, now, let us see the next slide comparison between the P N junction and the metasemical contact this is a very good comparison property I V characteristics you take both of them have the same type of same type of expression J equal to J naught e to power v by v t minus J equal to J naught e to power v by v, but what is the difference in the characteristics? J naught in this case is S star reticence constant is 120 into M star by M naught in silicon it is almost equal to 120 or 120, gallium arsenate is about 8 t squared into exponential this quantity. Now, in the case of semiconductor it is proportional to N i squared. So, I have got a constant which it is depend is decided by the doping etcetera, but the exponential term N i squared is e to the power of minus e g by k t. Now, let us see the mean contributor to the reverse current is this exponential term saturation current in the case of P N junction it is exponential e to the power of minus e g by k t and for silicon e g is 1.1 electron volts for gallium arsenate it is 1.43 electron volts. So, you can immediately say that the J naught is between the silicon and gallium arsenate junction gallium arsenate junction will have much lower much lower J naught because e g is larger there, between metal semiconductor contact and this P N junction if you take silicon e g is 1.1 and barrier height will be let us go back and see thermo equilibrium if you see the barrier height pi B n is much smaller than the band gap pi B n is this much band gap is you can see from here to here. So, even if this permeability comes down here it will come closer and closer to e g, but always less than e g. So, if you go to this particular expression where we have comparison this is 1.1 electron volts this is something like 0.6, 0.7 electron volts. So, this will be this particular quantity will be larger compared to that e to the power of minus 1.1 by k t e to the power of minus 0.7 by k t. So, this will be larger. So, always the reverse saturation current in the metal semiconductor contact will be higher than that in the case of P N junction. Now, current in forward bias condition in the case of P N junction current in a forward bias diode is due to injection of holes from the P type to N type, injection of electrons from the N type to P type. The barrier height for both holes and electrons will be reduced in the case of P N junction. In the case of metal semiconductor contact the current flow in the forward direction is dominated by injection of electron from the n side region to the metal. So, 5 B N does not change. So, the electron injection from the metal to semiconductor does not change it corresponds to the J naught term. Now, if you want to see the different this is the thing that I can you can see it one shot metal N type semiconductor thermal liquid will be like that. Forward bias more electrons are injected from semiconductor to the metal. Whereas, the electrons injected from the metal to semiconductor do not change that is this arrow to that smaller arrow. And when you go to reverse direction bias you make N region plus nothing no electrons are getting injected from the semiconductor to the metal because they do not have the energy to go above the barrier. All that you have current is due to injection of electrons from this metal to semiconductor that is J naught itself. So, J naught J naught e to power V by V t no current. Now, before you go further into this I just want to show how the currents in various devices will be. We draw the voltage versus current.  And in the case of metal semiconductor contact what will happen? Barrier is low. So, current is more reverse current is more I am sorry reverse current will be more passing through that it will go like that and it will go like this. So, these two are not same scale forward and reverse this is the metal this is the P N junction. Suppose P N junction silicon this is silicon this is metal silicon. Suppose I take gallium arsenide the gallium arsenide P N junction that will be like this. The E g is larger therefore, reverse saturation current will be even smaller that is the gallium arsenide P N junction. So, if I make a P N junction in gallium arsenide it will have more cutting voltage cutting voltage of almost about you know silicon it may be about 0.7 volts gallium arsenide it may be close to about 1 volt 1 electron 1 volt. So, you will have the that is voltage. So, this is gallium arsenide. Now, if I make a metal semiconductor to contact in gallium arsenide that will be somewhere higher than this because you can get higher barrier height in that compared to the silicon. So, that will be m s contact with gallium arsenide. So, in the gallium arsenide you can make metal semiconductor to contact much more effectively than in silicon. If you want to make J-fred they use metal semiconductor to contact in gallium arsenide because you can get cutting voltage something like in this case V gamma cutting voltage for that case will be something like about 0.6 volts close to that of cutting voltage of a silicon P N junction this one this is a gallium arsenide metal semiconductor contact that is because V g is higher you get a barrier height which are higher than what you get in the case of silicon. So, that is the idea that you can think of. Now, let us get back to this. So, having said that if you want to inject electrons into N channel you must have smaller barrier height that will go into that N channel MOSFET if you want to make. In that case of conventional jet on a schematic diagram in the case of conventional MOSFET this is a channel blue is the channel red is the oxide above that I have the metal and P type substrate I am talking of silicon junction silicon MOSFET N plus source N plus strain N channel when I apply plus voltage you can invert it. Now, when I apply plus voltage to the gate there is a depletion layer below this and this potential is at plus twice phi f when it is inverted surface potential is plus phi f that mean between the ground and this channel beginning there is plus twice phi f this junction is forward biased that means the barrier whatever barrier was there originally I am just showing it still as vertical, but it will go that barrier will be whatever built in potential is there minus twice phi f. So, originally the barrier was built in potential and if there is no inversion if there is no voltage appearing between the source and the channel barrier height between the channel and the source with built in potential. Now, because there is a plus twice phi f voltage here because of gate voltage at the channel potential difference there is V B I minus twice phi f forward biased as I was mentioning earlier when you invert the channel the source is getting source junction is getting forward biased by twice phi f. So, barrier height is V B I minus twice phi f that means the whole electrons can easily get injected across that I am just showing still that distribution of electrons from the permeable up to that like that in N type region. So, you can see a lot of electrons get injected here if I increase the twice phi f what a bit of electrons can be injected into channel. Now, from here to here when I apply a drain voltage V D S whether there is depletion layer at the drain end or not there is a drop or there is from this source end to the gate end there is a voltage rise. There is gate end is at plus voltage with respect to source end that means if I draw the energy band diagram that will be going down like this plus is at lower end compared to minus which means this is plus this is minus I put it at lower electron lower energy in electrons because plus and minus here electrons can be easily go from the minus to plus it can attach to plus. So, that is another way of looking at that. So, whatever electrons are injected here go down into the along the channel the drift electric feed from minus to plus and they collected. How much current flow is there here depends upon how much charge is present here because of the gate voltage also how much is the barrier heat here the barrier heat is reduced by phi f that is quite a large reduction in the barrier heat. So, entire current is controlled by the gate voltage more gate voltage more charge and whatever is collected here can be supplied from the source end because there is a reduced barrier heat is there. Now, let us take a look at the metal semiconductor contact on the right hand side see it is very interesting to compare this this is what makes makes it difficult for the technologies to realize metal source metal source drain metal source source metal drain drain junctions metal contact here. Here as you already have seen whatever I do on between the channel and the gate source that barrier heat whatever was there phi b m is not going to change that is going to remain in the same thing. Whatever I applied minus twice phi f I do here see in this case the minus twice f was reducing entire barrier in this case if I do minus twice f that is reduced here only this barrier heat is reduced here on the n side. So, this is reduced plus minus here and that is across this depletion layer there that is small depletion layer that is whatever twice phi f is appearing across that nothing here. So, that means number of electrons available here are fixed by the barrier heat phi b m this distribution is fixed by temperature. So, on the barrier heat if it is a rectifying contact the barrier heat is high. So, this number of electrons available for transporting from the metal to the semiconductor only in that small region. So, here whatever charges are here this portion is same as this there is a voltage drop from here to here because of current flow. So, the energy band diagram is like this. So, electrons reaching here will flow in that direction get collected by the range that no issue on that thing because there is downhill there you can be collected here. So, now the point that you would see here is if this is not able to supply whatever charges are inverted here it is getting collected, but the rate at which the current can flow is ultimately limited by how much is this can supply. If the barrier heat is let us say almost like there very high nothing can collect. There is no injection of carriers because of barrier for electrons in the source region is limited by the barrier heat and I am sorry number of electrons that can cross this barrier depends upon the barrier heat more the barrier heat more electrons are available. So, the moral of the story is if I want more number of electrons available here to be injected I must have this barrier heat reduced 5 B N must be lower and 5 B N is as you keep on getting lower and lower ultimately what you saw was you get here. If I keep on reducing the barrier heat if you see this graph here I will be characteristics I move along this line ultimately you get ohmic contact. So, ideally what you would like to have here would be you would like to have this as a ohmic contact or 5 B N as low as possible 5 B that is the barrier heat with respect to the channel not with respect to P region what we are concerned is the barrier heat between the metal and the N region which is the inertial region. So, what we are looking for is metal semiconductor contact at the source end which will which will give 5 B N as low as possible. Now, let us see whether you can get that by changing the work function. If you look at the this characteristics here, here I just go back to those slides see here. Here you had taken 5 M much larger than 5 of us that is the metal which has got large work function means the Fermi level is at a much lower level compared to the Fermi level of the semiconductor. 5 S small means the work function of the semiconductor is smaller between between the vacuum level and the Fermi level in semiconductor the energy difference is less compared to the energy difference between the vacuum level and the Fermi level in the semiconductor. So, now let us see what happens instead of I want to reduce the barrier heat. So, that there is supply is there what will happen if I get 5 M less than 5 of us. See, if this 5 M were large that would have been here that would have been here then the electrons would have got transferred from the semiconductor to the metal giving a depletion layer that give to rectifying. Here 5 M is small compared to what is 5 M from the vacuum level to the Fermi level that is smaller compared to this difference between the energy of the vacuum level and the Fermi level in semiconductor. So, when you connect them together in the system what you will have will be electrons will get transferred from the metal to the semiconductor till the two Fermi levels are equalized. So, that is the situation electrons have got transferred from the semiconductor to the metal. In metal there are already large number of electrons. So, if you transfer electrons to the semiconductor to the metal there will be an accumulation layer. See more number of electrons have got transferred from the metal to semiconductor there will be a small charge sheet that is no depletion layer. If it has to be depleted the electrons have to be transferred from the semiconductor to the metal. But now because of the higher Fermi level here electrons get transferred from the metal to the semiconductor. So, this surface gets more negatively charged this surface gets more positively charged that is the situation. So, you have got plus charges here and those plus charges you can put it as the electron density here are plus charges. But electron distribution is like this in the metal electron distribution semiconductor is like this. So, that is in thermal equilibrium there is no barrier here because this is accumulation. Accumulation means very little band bending you know that accumulation we used to take phi s is equal to 0. But it is not 0 slightly negative here. So, very small barrier if the electron very small bending. So, barrier heat only this much phi b n can be made very very small again determined by the difference between the phi m and chi f s phi f s phi m minus chi f s is negative. So, barrier heat in this much small only. So, the electrons here all so many electrons have energy above that here so many electrons are there. If I apply a voltage to this either way if I apply either way voltage there is very small movement here. So, there can be large current flow in the it is difference between the two is pre-escape this there was a big barrier here. Here there is no barrier for either case very small barrier. So, if I apply plus here or minus here there will be large transfer of electron from metal to semiconductor to semiconductor. So, this is the way to go. So, what you are telling is why do you choose metal with high work function choose a metal with low work function. For example, if I take aluminum work function is 4.05 and phi f s in semiconductor is 4.05 practically no barrier. So, you can be very happy if everything is fine you will say that the you are you can have ohmicont at if I have aluminum on to a surface of the n type semiconductor or as a source of the n channel MOSFET. So, now let us see if I have p type substrate because after all if you take n type substrate you get when invert you get p type surface. If I take p type substrate you get this type of n channel. Now, let us see what about the p type substrate. In fact, whatever we have discussed I am not getting down to this supposing the phi m is less than that of phi f s like in this case in the p type if it were p type what would happen formula will be even below phi m is less than phi f s. Electrons will get transferred from the semiconductor metal to the semiconductor if it is p type thing if electrons get transferred from the metal to the semiconductor there will be depletion layer. So, if phi m is less than phi f s you will get a depletion layer here and that will be rectifying. So, thing to remember is if you if when you make the contact if there is a depletion layer in the semiconductor you can change that depletion layer width and the potential barrier in semiconductor you can go you can change the barrier height in semiconductor that is rectifying. If I have a phi so, if there is no depletion layer if there is a accumulation layer then that is the only contact. So, exactly by the same argument I am not getting down into that you can determine figure in this case it is transferred from this metal to semiconductor introducing depletion layer that will give us the depletion layer. So, by applying a voltage you can change the barrier height so, it will be rectifying contact. If phi m is greater than the chi of s if phi m is greater than phi f s in the case of p type material this is way down you will transfer from there to there or you will get a you will get just like exactly reverse in the n type semiconductor if phi m is greater than phi of s you have got electrons transfer from the semiconductor to from the metal to semiconductor causing depleting. The opposite is true in the case of p type semiconductor if the phi m is larger than the phi of s you will have accumulation layer in the case of p type semiconductor. So, the sum up to summary of this discussion phi b n is phi m minus chi that is the ideal and if phi m is chi phi m minus chi is chi so, rectifying contact in n type semiconductor. What is phi b p I do not know whether I pointed it out to you let me go back to that and show you this is phi b p you take a look at this from if there is a hole here there is a electron is absent there to take the hole above this to the other side that has to cross this barrier height. So, the important thing to understand is if an electron is at this end to take it here you have to spend energy. So, a hole at the near the fermi level if you are talking about taking it to the above this point up to this point is equivalent of taking an electron from this point to that end that means to take an electron from here to here you have to you have to spend energy that is higher energy for electrons same thing if I have to take a hole from here that is fermi level to this edge of the gap barrier height you have to spend energy. So, this is barrier for holes and here the barrier for electron is that. So, when you go back to other diagrams here this is the barrier for the electrons and that is the e g band gap band gap minus phi b n band gap minus phi b n that is phi b n is that total is band gap that minus phi b n is phi b p. So, that is if you do not get it see if I have the energy band diagram like this the energy band diagram is like that that is n type. Now, that is the barrier height that is the barrier height for electrons and this is phi b p barrier height for holes because it is difficult take you have to spend energy for plus charges that is this is the higher energy for electrons that is higher energy this is higher energy for holes.  So, you can see that if phi b n is high phi b p is always low if some process gives you higher phi b phi b n that gives you lower phi b p this is something which you must remember. Now, let me go further down. So, phi b n if phi m is larger than chi phi b n is high at the same time you can see phi m is larger than chi phi b p is low because phi b n is high phi b p is low. So, you get phi m is larger than chi phi of s or chi you get rectifying contact with the n type material or n channel, but then for the same work function difference phi b p because if phi m is large this is e g minus that large quantity will be small phi b p will be small that will be omicontact in the p type substrate. So, if you get very easy to remember if you get rectifying contact with the p type material n type material or n channel device you will get omicontact in the p type material or p channel. So, low phi m phi m minus chi low value of phi m and chi because low phi b n that gives omicontact on n type material rectifying contact on p type. So, now what will you say? So, if I want to make a this ideal theory tells us that I would choose a metal with a lower function to make omicontact with the n channel because that can inject lot of carriers. If I have a p channel I will make a high work function material here that is ideal. Now whole thing is under the assumption that phi b n is phi m minus chi that was the most ideal case. Now let us get down to our requirement experimental results on phi b n for metals with different phi m. You can see this slide you did not see that measurements on phi b n there is some ways of measuring by the I v characteristic etcetera or C v I phi b n showed that the first order theory whatever we have mentioned is not correct phi b n equal to phi m minus chi is not satisfactory. That is the phi b n all these thoughts are measurements the crosses are the measured phi b n by making the measurements on metal semiconductor contact either C v or I v it will give you that you can understand that. So, what they did was they had silicon which was freshly cleaved you can just cleave a silicon material you can just apply some pressure it will cleave you cleave along a particular plane and freshly cleaved means what if I have the thing which is cleaved I have got the surface which is free I have the surface of the semiconductor which has been just cleaved that means there are a lot of dangling bonds there that will tell you that that surface has lot of surface states it is not ideal ideal case there are no surface states when I discuss the ideal metal semiconductor ideal metal semiconductor contact theory assumption was that there are no dangling bonds there are no surface states when you have an oxide layer there it is the same surface state which you call it as call it as a interface state because it is the same surface state manifests that as the interface state many of the dangling bonds are satisfied by the oxide there are still some of them which are not satisfied that is called interface state. So, freshly cleaved absolutely see this is one the x axis here the work function corresponding to aluminum, silver, copper and gold all this cross x. So, the phi B n is about 0.8 almost about two thirds of E g. So, that means once you have fixed the E g for silicon that was fixed that is freshly cleaved thing, but it gives a clue that there are large dangling bonds which were responsible for that the surface states were responsible for this. So, if you are able to remove those then you are in business.  Now, when a very, very thin layer may be less than a nanometer 2 angstroms, but nanometer is 10 angstroms couple of angstroms that is sufficient it passivates some of those dangling bonds. So, when you do that and put a metal you can see that where it has gone down is changed and as you increase the work function you expect phi m minus chi, chi is same for silicon phi m minus chi increases at increase and that increases linearly. We are very happy that it is obvious the law phi minus chi, but the change in the 5 B n say from 4.2 you change it to 4.7 or 4.75 around that for gold. Let me take 4.2 to 4.7 that is that is about 0.5 I should have got as per our theory the 5 B n should have increased by the same extent that is 0.5 electron volts, but if you see here it is about 0.5 here it has gone up and become 0.8 it should have increasing by 0.5 electron volts it has gone up only by 0.3 still not satisfactory it changes with phi m as we are happy that first order theory is ok, but it does not change as much as phi m. Let us see other materials is it characteristic of silicon alone same thing they did with gallium arsenide gallium arsenide results on cleaved 1 1 0 gallium arsenide cleaved there are slight dependence phi m varied from about 4 right up to about 4.8 it change hardly 0.2 electron volts. So, when it when you change it by about 1 electron volts closed 1 electron volts phi m your 5 B n changes hardly about 0.2 electron volts, but again the indication is there on the dependence of 5 B n on phi m, but not as much as you expect chemically prepared thing see here this is just freshly cleaved. In the case of silicon it was flat here it is slight dependence over there may be the substrate number is less than that 1 1 0 ok.  Then when 4 2 4.8 when you change it increases from instead of 0.8 electron volts increase in 5 B n it increases something like about 0.3 electron volts. So, still almost a linear variation is there with phi m, but not as much as you expect everything points out that if there are interface state densities are high the 5 B n will become independent of phi m, but if the interface state densities are reduced to some extent by some passivation it will become proportional to phi m, but not as much as there is a proportionality constant a factor which is not equal to 1, but than 1. Now, let us see. So, we have seen silicon we have seen gallium arsenide let us see germanium ok germanium if you see why we are taking a look at germanium is this is the one material which they are trying to use for making the MOSFET with metal semiconductor contact. They are using germanium because of its much higher electron mobility compared to silicon much higher whole mobility compared to silicon. If you go to gallium arsenide electron mobility is much higher compared to that of silicon whole mobility is not it is almost same as that of whole mobility silicon, but in germanium you get both of them by a factor of 2 to 3 higher. So, let us we will have made metal semiconductor contacts with germanium varying the work function from right from about 2.5 to about 5.5 or more platinum from cesium metal to platinum. You can see there all over the squares are the measured see put the thing together it does not follow any rules, but I can draw or at least if it is 5 m minus chi this should have been the dependence taking a chi of the minimum that is also about 4.05 close to that of silicon and if I had 5 m you can see 4 and 4.5 means that should have been somewhere 0.5 electron volt this point 0.5 it was corresponding that 4.5 minus 4.05 that is 0.5 would have been the barrel head you do not get that. If I take 3 electron volt I must have got it somewhere down here, but you get almost like this. So, just some quick thing we will get back to this later on to examine that I can draw a straight line like this then it is almost flat compared when I am using hoffnium titanium nickel etcetera it is almost flat close to about slightly less than 0.6 electron volts. Remember the band gap of germanium is 0.66 electron volts in the case of silicon we had 1.1 electron volts and you had the barrel head flat coming to about 0.8 electron volts that is about two thirds of that in the case of germanium band gap is 0.6 electron volts. So, what you get is slightly less than 0.6 electron volts that is below 0.6 electron volts, but I can draw a flat line like this or if I am more optimistic let us say it is dependent on phi m I can draw this line leaving out hoffnium and nickel and tantalum I can draw this line straight line and say there is still some phi m dependence. So, this is the phi m here and this we will come back to this is the band gap e c minus e v and phi m is there for that case see very high this thing here. So, this we will discuss there is a neutral level neutral level is very close to valence band that is indication of that. So, these two this is actually the ideal theory the dotted line that theory was given by Bete and Schottky and barrier height was called Schottky barrier, but whatever phi b n we are talking of was called as Schottky barrier because of name of Schottky who named it. So, that is the Schottky limit you would have got phi m minus chi means it is Schottky limit and Bardin said it will be independent of phi m it will be having certain value decided by a neutral level in the permeable in the permeable surface. So, that is the Bardin limit due to strong pinning limit surface pinning permeable pinning limit all that what is there we will be able to discuss later. So, from these things one can fit in a graph like this I will just discuss this how this comes up and what are the implications of that more details we will take up in the next presentation. So, what we have concluded from these experimental results is phi b n can be expressed by a relation ideal case it is phi m minus chi in the practice I can express phi b n as gamma times phi m minus chi plus 1 minus gamma time p g minus phi naught because we saw that depends upon e g minus phi naught. So, gamma equal to 0 or gamma equal to 1 second term is 0 gamma equal to 1 phi m minus chi that is the ideal case first order theory. When gamma equal to 0 first term ideal theory is gone and 1 minus gamma equal to 1 e g minus phi naught. So, we can say that when high freshly glued surface gamma is equal to 0 therefore, first term went off and you got a term which is independent of phi m e g what is that phi naught we will see in my next discussion and gamma in between the two. So, what we said is ideal theory it is phi m minus chi non ideal theory worst case gamma equal to 0 and it is depends it is independent of phi m and you get e g minus phi naught in between you get gamma is less than 1. So, something 0.5 times phi m minus gamma 0.5 times e g minus phi naught like that. So, in summary that is what we are telling you can express it in this fashion the details of all these things how it comes up due to the surface states or interface states we will just discuss in our next presentation complete details of that how to overcome that how to overcome some of these problems and how to use it we will see in the next presentation.


What's the word y'all welcome back to another article reaction y'all know I'm an internet general manager So when anytime anytime somebody comes up with an article dealing with trades of every single NBA team I gotta tell you what I think but this one is not necessarily giving you trade packages I think I just tell you hey whatever team should go for Chris Paul without telling you what they should trade away to get Chris Paul, so I think that could be interesting shout to Andy Bailey He is the author of this one right here. Let's hop right into it. Leave a like subscribe for your new couple days ago We gained like 6,000 subscribers in one singular day, which is like an all-time record on this channel So let's keep up that. Let's keep up that momentum. I know I'm not getting 6,000 a day, but let's maybe a thou Leave a like subscribe. Let's get into it First team is the Atlanta Hawks, and they should target Eric Gordon. I Don't like this Eric Gordon decided extension. I think it was last season It was a pretty big extension for a guy like her and then he came out this year and just either he wasn't healthy Or he just wasn't very good so I would hate for the Atlanta Hawks to trade for a guy like Eric Gordon and There's a potential that he's on that downward trajectory in his career Especially with the contract that they gave him Gordon is coming off a dreadfully any fish in 2019 2020 But he is still showing flashes of explosiveness when when healthy is a big heavy I'm good in January. He dropped 50. Yeah, he did But this thing any fishin and can't stay healthy. Those are two things I don't want in a player not to mention that he's already getting up there in age two I would pass in this then we have the bosses sell to a miles Turner. They're gonna be connected for a very very long time Especially when the Pacers have this log jam at the big position We still don't know if miles Turner's a bonus is like a healthy front court for the future And the bosses Celsius could use a guy like miles Turner so I can understand why they should target them It would be cool just to have a taller player that stretches the floor and the in defense. I Can understand this one next one. We have the Brooklyn Nets and your holiday You're how they could be that third star People are we storing like Bradley Beale for the third star another other ball dominant guys like that And I'm not saying Bradley Beale is super ball dominant dominant because we've seen him play successfully off ball But you're holiday is a guy that kids is play and get no touches and still be super impactful I can't say that about a lot of the other options that I've been seeing people throw out there Jew holiday will clamp up your best player He didn't make an all-defensive team somehow But he would clamp up your best player and still drop you 15 and then a couple years ago He was average in the dub, you know So he's a dual threat player and that is exactly what a guy like KD and Kyrie could use so I love this I still know what the package is. I mean, I guess we could talk about I mean It could be like special day with you or Carrie Slavard or they got pieces in Brooklyn to make a tray for Jew holiday if they really really wanted to Charlotte Horn is the Marty Rosen They're gonna have money this offseason Um, the Marty Rosen will probably in my eyes take his player option. It's twenty seven point seven million dollars What a sand down here, but maybe he doesn't maybe he feels like he can get more than that on the open market And if that's the case these Charlotte Hornets will be a team They'll probably throw him some type of bag Charlotte Hornets have a lot of cap space So I've been seeing like the Marty Rosen Christian Wood Montress Harrods is some of the bigger names in this free agency class Associated with them because they will have money to throw the bag at somebody They don't really need another guard unless they plan on trading one of their guards and I they're not trading Vonte And I don't think they'll trade Terry Rosier unless it's the right package So the Marty Rosen will be a guy that could come in and give you some wing scoring and everything So I would be okay with them targeting this guy. I mean he probably take his player option and then a trade a sign a trade or something is a possibility because I'm sure the Spurs would like to Go away from this of the Marty Rosen experiment. I don't hate that one Okay, uh Bulls and Chris Paul sure trading for Chris Paul Could probably get us into a playoff contention Especially when you think about what he did last season and now we have Billy Donovan as our coach too So it's like all the little pieces are standing the bulls to trade for Chris Paul But the reason why I wouldn't he's he's he's old and look at this contract taking on Chris Paul's deal is risky Yes, it is for a general manager that's just getting in there a trader for Chris Paul Probably won't be the smartest thing especially because it could blow up all in your face and now bulls fans are like man Connie Chauvas was the savior and now we traded for Chris Paul and he's old and we got to pay him 41.4 They're 44.2 and he's 35 years old in May Love me some Chris Paul if we could if we would guarantee the Chris Paul that we got last year For at least two more years. I would say I'm all in on trading for Chris Paul But it's not a guarantee him Zach Levy and Laurie marketing will be cool and then you got you can run a three-guard line Up to with him Kobe white and Zach Levy I would like that but I that the risk is so so high for a team that if we do trade for Chris Paul What are we just getting into the playoffs? It's not like we're gonna take that contract and be contending or anything So that's why I would probably say no next Cleveland Cavaliers get draft picture continue that build continue that rebuild get as many draft picks as possible Takes as many shots is getting that next start player for your organization. I'm cool with this I don't know how you do that me. Oh, you got Kevin love to dump off Larry Nance was cool and they got drumming But they they traded for drumming and gave up like a second round pig for him So I don't know if he's gonna have any value But yes continue to stockpile draft picks Victor Deepo for the Dallas Mavericks is also a name I've seen a bunch whether be on Twitter or also other bleach report articles. It would make sense The only thing is you're gonna have to be the one to pay him and maybe trade it for him Trading for him letting them play within the system of Luca and Chris staff. So you won't have to pay him a lot of money I don't know if Victor Deepo's agent and him believe that he's worth on the market because He's came off this ACL over that quad I'm sorry, wasn't it a quad injury or something and he didn't look amazing when he was there I could see him fitting very well alongside Luca though It's just depending on which version of him are we getting are we getting the all-star caliber version? Or are we getting the watered down a good starter? But not anything greater than that big Dola depo. Then we have different nuggets Bradley Beale. Sure. I like this Nicola Yolk it's 25 years old Jamal Murray and Michael Porter Jr. are both younger than him What would be the package we put together to get a Bradley Beale? Especially considering the front office for the watch the Wizards have said a thousand times that he is not even on the Trayboard and I'm saying so you would have to really wow them away with some type of trade But it would be dope to see a guy like Bradley Beale play for them I do like the Jamal Murray's defense has been a lot better in the bubble in the playoffs So you don't really worry about Bradley Beale and Jamal Murray backcourt as much Because Jamal Murray has stepped it up on the defensive side of the ball And that's crazy because I remember early in the bubble They were calling them the invernuggets because they had no D and now they play pretty solid defense nowadays So it's just crazy how a quick mindset change can change a lot of things. I Don't know what the package would look like but sure I'll be okay with the Jamal Murray Bradley Beale backcourt with Yolk it's come on man That team is ridiculous talking about them being in the conference finals this year if they can add Bradley Beale and not give up anything of significance and only thing of significance I'm thinking about other two top pieces. They'll be a scary team.  I was confused and then even the article says Nicholas Patoum. Yes This particular slide does it It's confusing. I don't really Okay, the Warriors Aaron Gordon, I like that idea a lot if if somehow If somehow the Orlando Magic can turn Aaron Gordon to the second overall pick that would be beautiful for them And that's not saying that Aaron Gordon isn't valuable or he's not a good player because I think the exact opposite But I do think that he could use a city change Organization change for him to blossom because he just hasn't really happened in Orlando and maybe with that second overall pick You can hit on I'm talking about the Orlando Magic. You can hit on the next start. It's I've been waiting for I don't know I don't know Dwayne Deadman Whoa, and I was thinking about like I've been thinking about this a lot since the Houston Rockets got eliminated from the playoffs What is a big center that can also stretch the floor so you can still play five out Dwayne? Demi could be that guy now last season. He was not very good I mean he signed that contract with the Sacramento Kings and it wasn't good He's been playing about minutes and then he got the minutes and he wasn't shooting the ball well But I am a believer that the the season we saw before that when he was hitting his threes and stuff What he was with Atlanta before they got him back is the Dwayne Demi that a team could get so I could see them taking a Stap at Dwayne Demi to be like hey, you're our five sets him hard screens pick and pop place of defense That's not bad that I'm not I'm not against the Dwayne that man Houston Rockets idea That's pretty cool. Any other paces Gordon Hayward. This is kind of the swap that they just had with Miles Turner They talked about this a bunch I like Gordon Hayward I'm trying to figure out that wing position because they got Jeremy Lamb was coming off a Achilles tear or something like that They got bubble TJ Warren So I guess you run Gordon Hayward at the four and in this hypothetical situation some bonuses are five They got to figure out their coaching situation first and then try to figure out That guy's idea and figure out. I mean, there's a lot of things Indiana can do this offseason Which is very interesting. They got a lot of pieces a coaching open up coaching opportunity So it's a lot of things could change with the Indiana paces for the better or for the worse Rudy gay with the Clippers Sure. I don't really have an opinion that their growths for the Lakers. Let's count it up. Let's get D Rose and contentive Maybe I'm okay with that get him to a team that he can actually play meaningful minutes and the Lakers could be that cool Their growths never quite made it back to MVP form, but at least the terms office is close. All right Gordon Hayward for the Memphis Grizzlies. Let's just start Gordon Hayward to every single team But I like this actually as well Gordon Hayward is such a nice player. The only thing is that he's gonna be taking up that option, right? Isn't it like 30 something million dollars and that's a little scary But Gordon Hayward is an impactful player when he's on the court And I could see him fitting pretty solidly along in the Memphis Grizzly uniform for sure Miami Heat Cal Lari That'll be interesting I don't like the idea of trading for that because I mean the Miami Heat fans are already Photoshopping the honest in the heat Jersey their Photoshop and every NBA star in the heat Jersey and trade of a Cal Lari kind of prevents the idea of having the money available for having the photo shop. Yeah, that's turning into a reality At any of those stars. Oh, right. This is exactly what the same, right? We must preserve our 2021 cap space Yes, exactly what they're saying. Yeah honest Kawai adding any of those I'm okay with that one Chris Paul Milwaukee Bucks agreed agreed if you've been if you watch any of the videos on this channel I think there's the match made in heaven. I would say yesterday 100% Minnesota Timberwolves and Aaron Gordon alongside cat bro The Timberwolves can can be very very a very very fun interesting team now I'm not trading the first overall pick for Aaron Gordon So what is the other situation that we could and they don't have the 2021 first round pick is that's with the Warriors right now. So how do we End up getting Aaron Gordon without trading the first overall pick I don't know and they don't give a suggestion here at all. I'm not trying to first overall pick for Aaron Gordon I'm sorry, but if there's another package they can get for Eric or to count me in James Johnson and I Don't know. I just said James Johnson's got a big old contract. Here's the verdict the Pelicans That's just a switch of Rooney for the Brooklyn that's cool New York Knicks Chris Paul has been tied together a lot, too They're trying to change the culture in New York trying to get winning basketball back and Chris Paul with Tom Thibodeau 35 year old Chris Paul with Tom Thibodeau playing 48 minutes a game would be interesting Um, I wouldn't be against it. I think Knicks fans. So I've seen both sides some Knicks fans I guess bringing Chris Paul I've seen some Knicks fans like state far away from Chris Paul So I don't know what the front office and then want to do with was it Leon Rose? Is that the right guy in charge of things over there? Um, I've seen it both ways. I've seen I could see basically the same thing I said with the Chicago Bulls, right? Where like I could see you traded for Chris Paul and get into a competent team and change in some culture But there's also a world where you're going to have to pay him this amount of money for him to just be good And maybe not the all NBA player. He was last year Next draft picks for the RKC thought. I mean, it's not like they already got 37 of them Just keep adding them. Keep adding them. Keep adding them. Keep adding them. Yeah, let's do that I mean they're they traded I mean they didn't trade but they didn't resign Billy Donovan because they were about to go hard rebuild It seems like Chris Paul gonna trade and maybe Steven Adams Galanari free agent all of this. So yes, get more draft picks and just stockpile them like it's a klt4q video supposed identity for the Orlando magic um Sure I guess back in November the Rangers Kevin O'Connor wrote That the Orlando magic were scouring the trade market for scoring help Okay, especially then we would help the score and help for sure if the brick and that's Yep Yep, he and Markel folks could face multiple positionless backhorts I could I could see that working out pretty well. I guess it's just I guess I'm just thinking about the possible trade package to make that happen Then we have buddy Hill basically saying going on to instagram liking pictures Comments and old things saying that he would love to play a Philly. That will be come on man. Philly. What a Philly nice It's floor spacing. What does buddy Hill provide floor spacing? You know, I'm running up most lead through shooters in the league right now I don't know what the trade package looks like. What do the Sacramento Kings want? I've been seeing people throw like Al Horford and if the Kings end up trading buddy Hill to get Al Horford's big old Contract, oh man. So it's an L for them, but a w for buddy Hill and a w for Philly A w for both. Um, oh the key is to whether Sacramento would still have any interest in Al Horford Under a different front office. The team was prepared to offer a massive deal for the veteran center. Oh, I didn't I don't remember that Oh Hey, if the new front office still won and make it happen that's made in heaven trade liars for the suns I mean, I haven't seen trade lives play basketball since it's like rookie season I feel like so I didn't really have an opinion on that Ben Simmons for the Portland Trailblazers Why do I keep seeing this? CJ McCullum getting traded for Ben Simmons I could see like why both fans would be interested in that I mean, I could obviously see a bunch of Philly fans saying no way because we have an all NBA player We're not trading away for CJ But like fit why CJ would probably work more with Joel and B Um, but you probably want a little bit more for Ben Simmons considering he wasn't all NBA player all defensive player Then you have Victor Lipo the Sacramento Kings Uh, the Spurs Aaron Gordon Aaron Gordon every team could use an Aaron Gordon is what they're saying For the same reason that I'm probably saying is that a trade for him in a different spot could blossom him And to be in the player that they wanted him when they drafted him Fourth fifth overall RJ, but we traded Ricky RJ. Okay. Uh, if the Toronto Raptors Opto lean for a fresh start with Pascal and Oji Anonomi and Norman Powell Let it mark us all in them walks shopping Cal Lauri might be oh, so you're saying that we You trade Cal Lauri to New York for RJ Barrett. New York fans. Yeah, I want I don't think you do I don't think you do If the New York Knicks were looking to speed up the process on the new head coach Tom Thibodeau a new point guard Would likely no you don't want to I don't understand this notion of speeding up the rebuild and what does Cal Cal Lauri is a winning player Do not get me wrong, but if you trading young young guy RJ bear for Cal Lauri sure you could maybe get into playoff contention, but he's not about to get you anywhere further than that by himself You get I'm saying I don't I would not I would not do this deal if I'm New York. I'm sorry I still think that RJ has endless potential. Sure. He didn't make an RMA team and you could quite You know, you can be mad about that, but he's definitely he's definitely better than trade my young piece for 30 plus your old point guard You know and it would be very Knicks like for them to trade for Aging point guard and him come to New York. It does not be as good as he was the previous five six years Kevin Love with Utah Jazz would be cool Uh, that would be that would be really cool throwing my colleagues expiring contract and some draft capital And you probably get a yes from Cleveland Cavaliers Uh, what's it was a salary match at Knicks?  There were no five injured to play the watch the whistle Julius Randolph and Bobby Portis Listen, what was this article? Was it cool? It had a lot of things that I can agree with It definitely had a lot of things. I'm like no like one that's a no Two that's a eh, you know, I'm saying there's a lot of things that I could agree with a lot of things I didn't agree with overall. I guess this one makes a good article. Leave a like on the video Let me know what you think in the comment section below and I'll be back soon Bye