There is disclosed a method for producing a silicon single crystal wafer characterized in that a silicon single crystal ingot in which nitrogen is doped is grown by Czochralski method  the single crystal ingot is sliced to provide a silicon single crystal wafer  and then the silicon single crystal wafer is subjected to heat treatment to out-diffuse nitrogen on the surface of the wafer  and the silicon single crystal wafer produced by the method  a method for producing a silicon single crystal wafer characterized in that a silicon single crystal ingot in which nitrogen is doped by Czochralski method is grown with controlling nitrogen concentration  oxygen concentration and cooling rate  and then the silicon single crystal ingot is sliced to provide a wafer  a silicon single crystal wafer obtained by slicing a silicon single crystal ingot grown by Czochralski method with doping nitrogen characterized in that depth of denuded zone after gettering heat treatment or device fabricating heat treatment is 2 to 12 mu m  and bulk micro-defect density after gettering heat treatment or device fabricating heat treatment is 1 x 10<8> to 2 x 10<10> number/cm<3>